JP7336441B2 - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP7336441B2 JP7336441B2 JP2020531831A JP2020531831A JP7336441B2 JP 7336441 B2 JP7336441 B2 JP 7336441B2 JP 2020531831 A JP2020531831 A JP 2020531831A JP 2020531831 A JP2020531831 A JP 2020531831A JP 7336441 B2 JP7336441 B2 JP 7336441B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
図1は、本発明の一態様の撮像装置に用いることができる画素10aを説明する図である。画素10aは、回路11および回路12を有する構成とすることができる。
本発明の一態様の撮像装置には、図2に示す画素10bの構成を用いてもよい。当該構成では、回路11と回路12の接続の位置が画素10aと異なり、ノードFDに回路11が接続される。当該構成では、トランジスタ104のソースまたはドレインの他方、キャパシタ108の一方の電極、トランジスタ105のゲート、トランジスタ102のソースまたはドレインの一方およびキャパシタ107の一方の電極を接続する配線がノードFDとなる。回路11、回路12およびそれらと接続する配線の構成は、画素10aと同じである。
本発明の一態様の撮像装置には、図3に示す画素10cの構成を用いてもよい。当該構成では、回路12におけるトランジスタ104の接続の位置が図1に示す画素10aと異なる。トランジスタ104のソースまたはドレインの一方は光電変換デバイス101の他方の電極(アノード)と電気的に接続され、トランジスタ104のソースまたはドレインの他方は配線122と電気的に接続される。その他の構成は、画素10aと同じである。
上述した画素10a、10b、10cは、ノードFDのリセット電位を光電変換デバイス101のアノードよりも高い電圧とし、逆バイアスがかかる向きに光電変換デバイス101を接続する構成である。
図2に示す回路11と回路12との接続構成を例として、回路11における電圧の加算動作を説明する。まず、トランジスタ102を導通させ、ノードFDに配線123の電位“VRS1”(リセット電位1)を書き込む。また、トランジスタ103を導通させ、キャパシタ107の他方の電極に配線124の電位“VREF”(参照電位)を供給する。このとき、キャパシタ107には電位“VRS1-VREF”が保持される。次に、ノードFDをフローティングとし、キャパシタ107の他方の電極に配線124の電位“VRS2”(リセット電位2)を供給する。
次に、画素10aの動作の一例を図5(A)のタイミングチャートを用いて説明する。なお、本明細書におけるタイミングチャートの説明においては、高電位を“HH”または“H”(“HH”>“H”)、低電位を“L”、リセット電位を“VRS1”または“VRS2”、参照電位を“VREF”で表す。配線121には常時“H”が供給され、配線122には常時“L”が供給されている状態とする。
次に、画素10b、10cの動作の一例を図5(B)のタイミングチャートを用いて説明する。なお、画素10b、10cは回路要素の接続形態が異なるが、同一のタイミングチャートで動作することができる。
本発明の一態様においては、図6(A)、(B)に例示するように、トランジスタにバックゲートを設けた構成としてもよい。図6(A)は、バックゲートがフロントゲートと電気的に接続された構成を示しており、オン電流を高める効果を有する。図6(B)は、バックゲートが定電位を供給できる配線と電気的に接続された構成を示しており、トランジスタのしきい値電圧を制御することができる。
本実施の形態では、本発明の一態様の撮像装置の構造例などについて説明する。
本発明の一態様に係る撮像装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図22(A)乃至(F)に示す。
Claims (8)
- 第1の回路と、第2の回路と、を備えた画素を有する撮像装置であって、
前記第1の回路は、第1のトランジスタと、第2のトランジスタと、第1のキャパシタと、を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1のキャパシタの一方の電極と電気的に接続され、
前記第1のキャパシタの他方の電極は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの一方は前記第2の回路と電気的に接続され、
前記第2の回路は、光電変換デバイスを有し、
前記第1の回路は、第1の電位と第2の電位を加算して第3の電位を生成する機能を有し、
前記第2の回路は、前記第3の電位が印加された前記光電変換デバイスでデータを生成する機能、ならびに前記データを出力する機能を有する撮像装置。 - 請求項1において、
前記第2の回路は、さらに、第3のトランジスタと、第4のトランジスタと、第5のトランジスタと、第2のキャパシタと、を有し、
前記光電変換デバイスの一方の電極は、前記第3のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第2のキャパシタの一方の電極と電気的に接続され、
前記第2のキャパシタの一方の電極は、前記第4のトランジスタのゲートと電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続されている撮像装置。 - 請求項2において、
前記第3のトランジスタのソースまたはドレインの一方が前記第1の回路と接続されている撮像装置。 - 請求項2において、
前記第3のトランジスタのソースまたはドレインの他方が前記第1の回路と接続されている撮像装置。 - 請求項1において、
前記第2の回路は、さらに、第3のトランジスタと、第4のトランジスタと、第5のトランジスタと、第2のキャパシタと、を有し、
前記光電変換デバイスの一方の電極は、前記第2のキャパシタの一方の電極と電気的に接続され、
前記第2のキャパシタの一方の電極は、前記第4のトランジスタのゲートと電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記光電変換デバイスの他方の電極は、前記第3のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記光電変換デバイスの一方の電極は前記第1の回路と接続されている撮像装置。 - 請求項1乃至請求項5のいずれか一項において、
前記撮像装置が有するトランジスタの少なくとも一つ以上は、チャネル形成領域に金属酸化物を有し、前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する撮像装置。 - 請求項1乃至請求項6のいずれか一項において、
前記光電変換デバイスは、アバランシェフォトダイオードである撮像装置。 - 請求項1乃至請求項7のいずれか一項に記載の撮像装置と、スピーカと、を有する電子機器。
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