JP7336441B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
JP7336441B2
JP7336441B2 JP2020531831A JP2020531831A JP7336441B2 JP 7336441 B2 JP7336441 B2 JP 7336441B2 JP 2020531831 A JP2020531831 A JP 2020531831A JP 2020531831 A JP2020531831 A JP 2020531831A JP 7336441 B2 JP7336441 B2 JP 7336441B2
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Prior art keywords
transistor
layer
potential
circuit
wiring
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JP2020531831A
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English (en)
Japanese (ja)
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JPWO2020021398A5 (https=
JPWO2020021398A1 (ja
Inventor
圭 高橋
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2020021398A1 publication Critical patent/JPWO2020021398A1/ja
Publication of JPWO2020021398A5 publication Critical patent/JPWO2020021398A5/ja
Priority to JP2023133796A priority Critical patent/JP7524430B2/ja
Application granted granted Critical
Publication of JP7336441B2 publication Critical patent/JP7336441B2/ja
Priority to JP2024113895A priority patent/JP7755695B2/ja
Priority to JP2025167106A priority patent/JP2025188099A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP2020531831A 2018-07-27 2019-07-18 撮像装置および電子機器 Active JP7336441B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023133796A JP7524430B2 (ja) 2018-07-27 2023-08-21 撮像装置
JP2024113895A JP7755695B2 (ja) 2018-07-27 2024-07-17 撮像装置
JP2025167106A JP2025188099A (ja) 2018-07-27 2025-10-03 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018141605 2018-07-27
JP2018141605 2018-07-27
PCT/IB2019/056134 WO2020021398A1 (ja) 2018-07-27 2019-07-18 撮像装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023133796A Division JP7524430B2 (ja) 2018-07-27 2023-08-21 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2020021398A1 JPWO2020021398A1 (ja) 2021-08-26
JPWO2020021398A5 JPWO2020021398A5 (https=) 2022-07-07
JP7336441B2 true JP7336441B2 (ja) 2023-08-31

Family

ID=69182020

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020531831A Active JP7336441B2 (ja) 2018-07-27 2019-07-18 撮像装置および電子機器
JP2023133796A Active JP7524430B2 (ja) 2018-07-27 2023-08-21 撮像装置
JP2024113895A Active JP7755695B2 (ja) 2018-07-27 2024-07-17 撮像装置
JP2025167106A Pending JP2025188099A (ja) 2018-07-27 2025-10-03 撮像装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2023133796A Active JP7524430B2 (ja) 2018-07-27 2023-08-21 撮像装置
JP2024113895A Active JP7755695B2 (ja) 2018-07-27 2024-07-17 撮像装置
JP2025167106A Pending JP2025188099A (ja) 2018-07-27 2025-10-03 撮像装置

Country Status (5)

Country Link
US (2) US11948959B2 (https=)
JP (4) JP7336441B2 (https=)
KR (1) KR102882109B1 (https=)
CN (2) CN112425152B (https=)
WO (1) WO2020021398A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2021165781A1 (ja) 2020-02-20 2021-08-26 株式会社半導体エネルギー研究所 撮像装置、電子機器および移動体
EP4446858B1 (en) * 2023-04-13 2025-10-08 Imec VZW Charge sensor circuit, a detector array and a method for charge-based sensing
JP2024169345A (ja) * 2023-05-23 2024-12-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011119674A (ja) 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652704B2 (en) * 2004-08-25 2010-01-26 Aptina Imaging Corporation Pixel for boosting pixel reset voltage
KR101280743B1 (ko) * 2010-04-07 2013-07-05 샤프 가부시키가이샤 회로 기판 및 표시 장치
KR101343293B1 (ko) * 2010-04-30 2013-12-18 샤프 가부시키가이샤 회로 기판 및 표시 장치
JP2013197697A (ja) 2012-03-16 2013-09-30 Sony Corp 固体撮像装置及び電子機器
JP6495602B2 (ja) * 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
JP2015056878A (ja) * 2013-09-13 2015-03-23 株式会社東芝 固体撮像装置
US9397637B2 (en) * 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
CN105742303B (zh) * 2014-12-26 2020-08-25 松下知识产权经营株式会社 摄像装置
TWI738569B (zh) * 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
US9876946B2 (en) * 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
US9967504B1 (en) * 2017-04-06 2018-05-08 Omnivision Technologies, Inc. Imaging sensor with boosted photodiode drive
WO2020021398A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 撮像装置および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119674A (ja) 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JP7524430B2 (ja) 2024-07-29
CN112425152A (zh) 2021-02-26
CN112425152B (zh) 2025-02-28
US20240222411A1 (en) 2024-07-04
JP7755695B2 (ja) 2025-10-16
CN119946458A (zh) 2025-05-06
WO2020021398A1 (ja) 2020-01-30
JP2023144118A (ja) 2023-10-06
US20210273007A1 (en) 2021-09-02
KR102882109B1 (ko) 2025-11-05
JP2025188099A (ja) 2025-12-25
KR20210040363A (ko) 2021-04-13
JP2024147701A (ja) 2024-10-16
JPWO2020021398A1 (ja) 2021-08-26
US11948959B2 (en) 2024-04-02

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