CN112420892A - 一种使用硅氮烷进行粘结的紫外led灯珠及其制备方法 - Google Patents
一种使用硅氮烷进行粘结的紫外led灯珠及其制备方法 Download PDFInfo
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- CN112420892A CN112420892A CN202011174091.2A CN202011174091A CN112420892A CN 112420892 A CN112420892 A CN 112420892A CN 202011174091 A CN202011174091 A CN 202011174091A CN 112420892 A CN112420892 A CN 112420892A
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- Prior art keywords
- ultraviolet led
- silazane
- led lamp
- lamp bead
- powder
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
紫外LED灯珠 | 剪切应力(MPa) | 耐热性能(h) | 耐黄变性能 |
L1 | 11.6 | 500 | 10次无黄变 |
L2 | 10.2 | 477 | 10次无黄变 |
L3 | 10.7 | 489 | 10次无黄变 |
D1 | 5.6 | 235 | 6次无黄变 |
D2 | 3.3 | 211 | 3次无黄变 |
D3 | 6.5 | 177 | 5次无黄变 |
D4 | 4.9 | 289 | 5次无黄变 |
D5 | 5.1 | 254 | 4次无黄变 |
Claims (10)
Priority Applications (1)
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CN202011174091.2A CN112420892B (zh) | 2020-10-28 | 2020-10-28 | 一种使用硅氮烷进行粘结的紫外led灯珠及其制备方法 |
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CN202011174091.2A CN112420892B (zh) | 2020-10-28 | 2020-10-28 | 一种使用硅氮烷进行粘结的紫外led灯珠及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN112420892A true CN112420892A (zh) | 2021-02-26 |
CN112420892B CN112420892B (zh) | 2021-11-16 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150243923A1 (en) * | 2012-09-28 | 2015-08-27 | Osram Oled Gmbh | Optoelectronic component and method for producing an optoelectronic component |
CN105112010A (zh) * | 2015-09-15 | 2015-12-02 | 中国科学院化学研究所 | 基于硅氮烷及其改性聚合物室温固化粘结剂及其制备方法 |
CN105392825A (zh) * | 2013-07-19 | 2016-03-09 | Az电子材料卢森堡有限公司 | 用于发光二极管的封装材料 |
CN106571345A (zh) * | 2015-10-09 | 2017-04-19 | 纳晶科技股份有限公司 | 一种封装结构、其制备方法与包含其的光电设备 |
CN108707420A (zh) * | 2018-04-03 | 2018-10-26 | 广东工业大学 | 一种室温等离子体固化的聚硅氮烷涂层及其制备方法和应用 |
CN109903689A (zh) * | 2019-03-13 | 2019-06-18 | 深圳市洲明科技股份有限公司 | Led显示屏及其制备方法 |
CN110050016A (zh) * | 2016-12-02 | 2019-07-23 | 默克专利股份有限公司 | 由可交联聚合物组合物制备光电装置的方法 |
CN110055027A (zh) * | 2019-04-30 | 2019-07-26 | 汕头市骏码凯撒有限公司 | 一种中折折射率led封装硅橡胶材料及其制备方法 |
CN111162070A (zh) * | 2020-01-16 | 2020-05-15 | 宁波升谱光电股份有限公司 | 一种深紫外led器件及其制备方法 |
-
2020
- 2020-10-28 CN CN202011174091.2A patent/CN112420892B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150243923A1 (en) * | 2012-09-28 | 2015-08-27 | Osram Oled Gmbh | Optoelectronic component and method for producing an optoelectronic component |
CN105392825A (zh) * | 2013-07-19 | 2016-03-09 | Az电子材料卢森堡有限公司 | 用于发光二极管的封装材料 |
CN105112010A (zh) * | 2015-09-15 | 2015-12-02 | 中国科学院化学研究所 | 基于硅氮烷及其改性聚合物室温固化粘结剂及其制备方法 |
CN106571345A (zh) * | 2015-10-09 | 2017-04-19 | 纳晶科技股份有限公司 | 一种封装结构、其制备方法与包含其的光电设备 |
CN110050016A (zh) * | 2016-12-02 | 2019-07-23 | 默克专利股份有限公司 | 由可交联聚合物组合物制备光电装置的方法 |
CN108707420A (zh) * | 2018-04-03 | 2018-10-26 | 广东工业大学 | 一种室温等离子体固化的聚硅氮烷涂层及其制备方法和应用 |
CN109903689A (zh) * | 2019-03-13 | 2019-06-18 | 深圳市洲明科技股份有限公司 | Led显示屏及其制备方法 |
CN110055027A (zh) * | 2019-04-30 | 2019-07-26 | 汕头市骏码凯撒有限公司 | 一种中折折射率led封装硅橡胶材料及其制备方法 |
CN111162070A (zh) * | 2020-01-16 | 2020-05-15 | 宁波升谱光电股份有限公司 | 一种深紫外led器件及其制备方法 |
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Address after: 343000 No.288, Nantang Road, Jinggangshan economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee after: Ji'an MuLinSen New Material Technology Co.,Ltd. Address before: 343000 No.288, Nantang Road, Jinggangshan economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee before: Ji'an MuLinSen semiconductor materials Co.,Ltd. |
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Effective date of registration: 20221129 Address after: 343600 No. 288, Nantang Road, Jinggangshan Economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee after: Ji'an MuLinSen Precision Technology Co.,Ltd. Address before: 343000 No.288, Nantang Road, Jinggangshan economic and Technological Development Zone, Ji'an City, Jiangxi Province Patentee before: Ji'an MuLinSen New Material Technology Co.,Ltd. |