CN112420813B - 用于ⅲ-ⅴ族氮化物器件的表面钝化结构及其器件 - Google Patents

用于ⅲ-ⅴ族氮化物器件的表面钝化结构及其器件 Download PDF

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CN112420813B
CN112420813B CN202011302202.3A CN202011302202A CN112420813B CN 112420813 B CN112420813 B CN 112420813B CN 202011302202 A CN202011302202 A CN 202011302202A CN 112420813 B CN112420813 B CN 112420813B
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layer
substrate
thickness
nitride
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CN112420813A (zh
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郭德霄
林志东
何俊蕾
王立阁
汪晓媛
赵杰
刘成
叶念慈
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Xiamen Sanan Integrated Circuit Co Ltd
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Abstract

本发明公开了一种用于Ⅲ‑Ⅴ族氮化物器件的表面钝化结构及其器件，包括位于Ⅲ‑Ⅴ族氮化物基底上的Al1‑xScxN层和AlySc2‑yO3层，Al1‑ xScxN层和AlySc2‑yO3层由下至上依次层叠设置，其中，Al1‑xScxN层的厚度为0.5~10nm，0＜x≤1；AlySc2‑yO3层的厚度为1~20nm，0≤y＜2，Al1‑xScxN层的厚度≤AlySc2‑yO3层的厚度。本发明可以进一步降低界面态的产生，降低器件出现电流崩塌的风险，提高器件可靠性。

Description

用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构及其器件
技术领域
本发明涉及半导体技术领域，特别涉及一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构及其器件。
背景技术
电子电力技术在现代人类的生产生活当中扮演着重要的角色，从日常生活中的家用电器到工业生产、电器交通以及新能源技术，电力电子器件无处不在。其中，以氮化镓材料为代表的Ⅲ-Ⅴ族氮化物电子电力器件得到了广泛的运用。氮化镓（GaN）作为第三代宽禁带半导体材料，在与传统的硅（Si）基半导体材料相比，其在特性上优势突出。由于禁带宽度大、导热率高，GaN器件可承载更高的能量密度，可靠性更高；较大的禁带宽度和击穿电场，使得器件导通电阻减小，有利于提升器件的整体能效，这些特点决定了它们在功率开关器件方面具有广泛的应用前景。
然而，由GaN的界面态导致的电流崩塌效应，严重制约着GaN器件的实际应用。电流崩塌现象是指GaN HEMT器件在动态下工作时输出电流降低的现象，在器件关断状态下，在栅电极靠近漏极端一侧的（Al）GaN体内或者表面缺陷态捕获负电荷，形成界面负电荷陷阱区，这些负电荷在静电感应作用下会减少甚至完全耗尽下方沟道区的二维电子气（2DEG），形成沟道耗尽区。当给器件施加栅电压并开启器件时，栅极下方沟道导通，但是界面负电荷陷阱区的负电荷不能及时释放，导致器件不能完全导通，导致电流密度下降以及输出功率减小等现象发生。
现有减小电流崩塌效应的措施主要包括表面介质钝化和场板结构。表面介质钝化主要指利用等离子体增强化学气相沉积（PECVD）法生长氮化硅薄膜，以稳定GaN表面的界面态，阻止表面缺陷态捕获负电荷，从而相对提升了2DEG的浓度。场板结构指位于器件上方且与器件电极相连的金属板，通过介质薄膜与器件隔离，可通过电场调制抑制电流崩塌现象，并提升器件的击穿电压，提高功率输出密度。
发明内容
本发明的目的在于提供一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，利用原子层沉积技术沉积Al1-xScxN层和AlySc2-yO3层双层薄膜进行表面处理，以进一步抑制电流崩塌效应。
为解决上述技术问题，本发明的技术解决方案是：
一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括位于Ⅲ-Ⅴ族氮化物基底上的Al1-xScxN层和AlySc2-yO3层，Al1-xScxN层和AlySc2-yO3层由下至上依次层叠设置，其中，Al1- xScxN层的厚度为0.5~10nm，0＜x≤1；AlySc2-yO3层的厚度为1~20nm，0≤y＜2，Al1-xScxN层的厚度≤AlySc2-yO3层的厚度。
进一步，Al1-xScxN层具有多层结构，或者，AlySc2-yO3层具有多层结构。
进一步，在Al1-xScxN层的多层结构中，每一层中Al的含量由下至上依次递增，Sc含量由下至上依次递减。
进一步，在AlySc2-yO3层的多层结构中，每一层中Al的含量由下至上依次递减，Sc含量由下至上依次递增。
进一步，还包括AlN层，Al1-xScxN层层叠于AlN层上。
进一步，还包括Al2O3层，Al2O3层层叠于AlySc2-yO3层上。
进一步，Al1-xScxN层和AlySc2-yO3层的沉积方式为原子层沉积。
一种Ⅲ-Ⅴ族氮化物器件，至少包括基底、电极和钝化保护层，电极和钝化保护层位于基底上；还包括由下至上依次层叠设置的Al1-xScxN层和AlySc2-yO3层，Al1-xScxN层位于基底和电极上，钝化保护层位于AlySc2-yO3层上；其中，Al1-xScxN层的厚度为0.5~10nm，0＜x≤1；AlySc2-yO3层的厚度为1~20nm，0≤y＜2，Al1-xScxN层的厚度≤AlySc2-yO3层的厚度。
进一步，钝化保护层具体为SiN层、SiO2和SiON中的一种或多种。
进一步，基底至少为AlGaN、GaN、InAlGaN、InGaN、InAlN、InN和AlN中的任意一种。
进一步，Al1-xScxN层具有多层结构，每一层中Al的含量由下至上依次递增，Sc含量由下至上依次递减。AlySc2-yO3层具有多层结构，每一层中Al的含量由下至上依次递减，Sc含量由下至上依次递增。还包括AlN层，Al1-xScxN层层叠于AlN层上。还包括Al2O3层，Al2O3层层叠于AlySc2-yO3层上。Al1-xScxN层和AlySc2-yO3层的沉积方式为原子层沉积。
本发明首先在半导体器件基底上利用原子层沉积技术分别沉积薄层（Al1-xScxN层与AlySc2-yO3层），然后在利用PECVD法生长氮化硅薄膜进行常规表面钝化技术。其中，Al1- xScxN层的厚度控制在0.5nm~10nm，其作用在于氮化（Nitridation）半导体器件表面的自然氧化层，降低因裸露在空气中形成的自然氧化层带来的表面态；同时由于相似的晶格结构，首先沉积Al1-xScxN可以有效减少因与氮化镓或铝镓氮器件表面晶格失配而引入新的界面态；AlySc2-yO3层的厚度控制在1nm~20nm，作用在于一方面可以与Al1-xScxN形成一个自然的过渡层，避免成膜时形成多余的表面态；另一方面由于AlySc2-yO3采用原子层沉积技术形成，具有台阶覆盖性好，成膜厚度均匀性高，薄膜致密度高等优点，可以有效降低后续PECVD生长钝化保护层（如氮化硅）时等离子体损伤表面，进一步降低界面态的产生，降低器件出现电流崩塌的风险，提高器件可靠性。
附图说明
图1是本发明的结构示意图；
图2是本发明的实施例三的结构示意图；
图3是本发明的GaN基高电子迁移率晶体管结构示意图。
标号说明
基底1 源极2 漏极3 栅极4
Al1-xScxN层5 AlySc2-yO3层6 钝化保护层7。
具体实施方式
下面结合附图和具体实施例对本发明作进一步详述。在此需要说明的是，下面所描述的本发明各个实施例中所涉及的技术特征只要彼此之间未构成冲突就可以相互组合。
实施例一
如图1所示，一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的Al0.2Sc0.8N层和AlScO3层，其中，Al0.2Sc0.8N层的厚度为1nm，AlScO3层的厚度为1nm。
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环8次后，可在基底表层沉积1.0nm薄层氮化铝钪（Al0.2Sc0.8N）。步骤二，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环5次后，可在基底表层沉积1.0nm薄层氧化铝钪（AlScO3）。
实施例二
一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的Al0.2Sc0.8N层和AlScO3层，其中，Al0.2Sc0.8N层的厚度为0.5nm，AlScO3层的厚度为2nm。
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环8次后，可在基底表层沉积1.0nm薄层氮化铝钪（Al0.2Sc0.8N）。步骤二，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环10次后，可在基底表层沉积2.0nm薄层氧化铝钪（AlScO3）。
实施例三
如图2所示，一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的AlN层、Al0.2Sc0.8N层、Al0.6Sc0.4N层、Al1.2Sc0.8O3层、AlScO3层。其中，AlN层的厚度为0.3nm，Al0.2Sc0.8N层的厚度为0.3nm，Al0.6Sc0.4N层的厚度为0.4nm，Al1.2Sc0.8O3层的厚度为0.5nm，AlScO3层的厚度为1nm，Al2O3层的厚度为0.5nm。
在本实施例中，Al1-xScxN层具体由Al0.2Sc0.8N层和Al0.6Sc0.4N层组成，每一层中Al的含量由下至上依次递增，Sc含量由下至上依次递减。AlySc2-yO3层由Al1.2Sc0.8O3层和AlScO3层，每一层中Al的含量由下至上依次递减，Sc含量由下至上依次递增。薄层的渐变Al1-xScxN层和渐变AlySc2-yO3层可利用层与层之间的弛豫结构，最大程度上缓解因氮化镓基基底与钝化保护层之间晶格失配引入的界面态。同时，AlN层可进一步减少界面态的存在。
在本实施例中，AlySc2-yO3层由Al1.2Sc0.8O3层和AlScO3层两层构成，当然，也可以根据需要由三层、四层或者更多层构成，例如：AlySc2-yO3层由Al1.5Sc0.5O3层、AlScO3层和Al0.5Sc1.5O3层三层构成，或者，AlySc2-yO3层由Al1.7Sc0.3O3层、Al1.1Sc0.9O3层、Al0.7Sc1.3O3层和Al0.4Sc1.6O3层四层构成。
同理，Al1-xScxN层也可以根据需要由三层、四层或者更多层构成，例如：Al1-xScxN层由Al0.3Sc0.7N层、Al0.5Sc0.5N层和Al0.8Sc0.2N层三层构成，或者，Al1-xScxN层由Al0.3Sc0.7N层、Al0.5Sc0.5N层、Al0.7Sc0.3N层和Al0.9Sc0.1N层四层构成。
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s），循环3次后，可在基底表层沉积0.3nm薄层氮化铝（AlN）。步骤二，接着改变流量，依次以循环脉冲形式通入三甲基铝（0.3s）、氨气（0.8s）、三甲基铝（0.3s）、三异丙基环戊二烯基钪（1s），循环3次后，可在基底表层沉积0.4nm薄层氮化铝钪（Al0.6Sc0.4N）步骤三，接着改变流量，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环3次后，可在基底表层沉积0.3nm薄层氮化铝钪（Al0.2Sc0.8N）。步骤四，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.4s）、去离子水（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（1s），循环5次后，可在基底表层沉积0.5nm薄层氧化铝钪（Al1.2Sc0.8O3）。步骤五，接着改变流量，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环5次后，可在基底表层沉积1.0nm薄层氧化铝钪（AlScO3）。步骤六，接着改变流量，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s），循环5次后，可在基底表层沉积0.5nm薄层氧化铝（Al2O3）。
实施例四
一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的ScN层和Sc2O3层，其中，ScN层的厚度为8nm，Sc2O3层的厚度为15nm。
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s），循环10次后，可在基底表层沉积8nm薄层氮化钪（ScN）。步骤二，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入去离子水（0.5s）、三异丙基环戊二烯基钪（1s），循环18次后，可在基底表层沉积15nm薄层氧化铝钪（Sc2O3）。
实施例五
一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的AlN层、ScN层和Al0.8Sc1.2O3层，其中，AlN层的厚度为0.3nm，ScN层的厚度为2nm，Al0.8Sc1.2O3层的厚度为2nm。
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s），循环3次后，可在基底表层沉积0.3nm薄层氮化铝（AlN）。步骤二，接着改变流量，依次以循环脉冲形式通入氨气（0.5s）、三异丙基环戊二烯基钪（2s），循环2次后，可在基底表层沉积2nm薄层氮化钪（ScN）。步骤三，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s）、三异丙基环戊二烯基钪（2s），循环20次后，可在基底表层沉积2nm薄层氧化铝钪（Al0.8Sc1.2O3）。
实施例六
一种用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，包括由下至上依次层叠设置的Al0.2Sc0.8N层和Sc2O3层以及氧化铝（Al2O3）层，其中，Al0.2Sc0.8N层的厚度为1nm，Sc2O3层的厚度为2nm、氧化铝（Al2O3）层为10nm；
其具体的制作方法如下：步骤一，将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环10次后，可在基底表层沉积1.0nm薄层氮化铝钪（Al0.2Sc0.8N）步骤二，将原子层沉积系统作业腔体降温并控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入去离子水（0.5s）、三异丙基环戊二烯基钪（1s），循环3次后，可在基底表层沉积2nm薄层氧化铝钪（Sc2O3）；接着改变流量，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s），循环100次后，可在基底表层沉积10nm薄层氧化铝（Al2O3）。
实施例七
为本发明的对比实施例，即在基底表层沉积15nm薄层氮化铝钪（Al0.2Sc0.8N）。其具体的制作方法如下：将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s），循环3次后，可在基底表层沉积0.3nm薄层氮化铝（AlN）。步骤二，接着改变流量，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环120次后，可在基底表层沉积15nm薄层氮化铝钪（Al0.2Sc0.8N）。
实施例八
为本发明的对比实施例，即在基底表层沉积15nm薄层氧化铝钪（AlScO3）。其具体的制作方法如下：将原子层沉积系统作业腔体控制在300℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、去离子水（0.5s）、三甲基铝（0.2s）、三异丙基环戊二烯基钪（2s），循环73次后，可在基底表层沉积15nm薄层氧化铝钪（AlScO3）。
实施例九
为本发明的对比实施例，即在基底表层沉积15nm薄层氧化钪（Sc2O3）。其具体的制作方法如下：将原子层沉积系统作业腔体控制在300℃，依次以循环脉冲形式通入去离子水（0.5s）、三异丙基环戊二烯基钪（1s），循环18次后，可在基底表层沉积15nm薄层氧化铝钪（Sc2O3）。
实施例十
为本发明的对比实施例，即在基底表层沉积15nm薄层氮化钪（ScN）。其具体的制作方法如下：将原子层沉积系统作业腔体控制在425℃，并待基底温度稳定后，依次以循环脉冲形式通入三甲基铝（0.2s）、氨气（0.5s），循环20次后，可在基底表层沉积15nm薄层氮化钪（ScN）。
Ⅲ-Ⅴ族氮化物器件有很多种，但其至少包括基底、电极和钝化保护层，电极和钝化保护层位于基底上；还包括由下至上依次层叠设置的Al1-xScxN层和AlySc2-yO3层，Al1- xScxN层覆盖于基底和电极上，钝化保护层覆盖于AlySc2-yO3层上；其中，Al1-xScxN层的厚度为0.5~10nm，0＜x≤1；AlySc2-yO3层的厚度为1~20nm，0≤y＜2，Al1-xScxN层的厚度≤AlySc2-yO3层的厚度，构成器件的其他具体结构，在此不予赘述。
在本实施例中，将以氮化镓基高电子迁移率晶体管为例，将上述实施例一至实施例十的表面钝化结构，运用到氮化镓基高电子迁移率晶体管上，测试其电流崩塌系数。
如图3所示，一种氮化镓基高电子迁移率晶体管，包括基底1、源极2、漏极3、栅极4、Al1-xScxN层5、AlySc2-yO3层6和钝化保护层7，源极2、漏极3、栅极4和钝化保护层7位于基底1上；由下至上依次层叠设置的Al1-xScxN层5和AlySc2-yO3层6，Al1-xScxN层5覆盖于基底1、源极2、漏极3和栅极4上，钝化保护层7覆盖于AlySc2-yO3层6上，基底1具体为GaN基底，钝化保护层7具体为SiN层。
进一步，钝化保护层可以为SiN层、SiO2和SiON中的一种或多种。其主要作用为提高器件的绝缘效果，减小漏电。抑制电流崩塌效应，提升器件的输出电流与输出功率。所以，只要能起到相同作用，钝化保护层也可以选择其他材料，不限定于SiN层、SiO2和SiON。
进一步，基底可以为GaN，当然，基底也可以选择其他Ⅲ-Ⅴ族氮化物，至少包括AlGaN、InAlGaN、InGaN、InAlN、InN或AlN中的任一一种。
测试各实施例电流崩塌系数（电流崩塌系数越小，意味着电流崩塌效应越小，器件越稳定）的数据，如下表所示。可以看出在Al1-xScxN层和AlySc2-yO3层同时都是渐变结构的条件下，电流崩塌效应最小，意味着氮化镓基表面钝化效果最佳。而且，采用本发明的结构后，其器件的稳定性相对于只有单层结构都有一定程度的提升。
实施例 一 二 三 四 五
电流崩塌系数 15.2% 13.8% 5.3% 13.5% 12.2%
实施例 六 七 八 九 十
电流崩塌系数 13.1% 18.2% 22.7% 25.4% 17.6%
本发明的表层钝化结构工艺成熟简单，可以有效降低界面态的产生，抑制电流崩塌效应，提高器件性能。
以上所述，仅为本发明较佳的具体实施方式，但本发明的设计构思并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，利用此构思对本发明进行非实质性的改动，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：包括位于Ⅲ-Ⅴ族氮化物基底上的Al1-xScxN层和AlySc2-yO3层，Al1-xScxN层和AlySc2-yO3层由下至上依次层叠设置，其中，Al1-xScxN层的厚度为0.5~10nm，0＜x≤1；AlySc2-yO3层的厚度为1~20nm，0≤y＜2，Al1-xScxN层的厚度≤AlySc2-yO3层的厚度。
2.根据权利要求1所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：Al1- xScxN层具有多层结构，或者，AlySc2-yO3层具有多层结构。
3.根据权利要求2所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：在Al1-xScxN层的多层结构中，每一层中Al的含量由下至上依次递增，Sc含量由下至上依次递减。
4.根据权利要求2所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：在AlySc2-yO3层的多层结构中，每一层中Al的含量由下至上依次递减，Sc含量由下至上依次递增。
5.根据权利要求1所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：还包括AlN层，Al1-xScxN层层叠于AlN层上。
6.根据权利要求1所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：还包括Al2O3层，Al2O3层层叠于AlySc2-yO3层上。
7.根据权利要求1所述的用于Ⅲ-Ⅴ族氮化物器件的表面钝化结构，其特征在于：Al1- xScxN层和AlySc2-yO3层的沉积方式为原子层沉积。
8.一种Ⅲ-Ⅴ族氮化物器件，至少包括基底、电极和钝化保护层，电极和钝化保护层位于基底上；其特征在于：还包括如权利要求1至权利要求7中任一项所述的表面钝化结构，其中，Al1-xScxN层位于基底和电极上，钝化保护层位于AlySc2-yO3层上。
9.根据权利要求8所述的一种Ⅲ-Ⅴ族氮化物器件，其特征在于：钝化保护层具体为SiN层、SiO2和SiON中的一种或多种。
10.根据权利要求8所述的一种Ⅲ-Ⅴ族氮化物器件，其特征在于：基底至少为AlGaN、GaN、InAlGaN、InGaN、InAlN、InN和AlN中的任意一种。
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