CN112382713A - SMD full-color LED packaging structure based on flip-chip technology - Google Patents
SMD full-color LED packaging structure based on flip-chip technology Download PDFInfo
- Publication number
- CN112382713A CN112382713A CN202011164322.1A CN202011164322A CN112382713A CN 112382713 A CN112382713 A CN 112382713A CN 202011164322 A CN202011164322 A CN 202011164322A CN 112382713 A CN112382713 A CN 112382713A
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- Prior art keywords
- flip
- cavity
- color led
- support
- structure based
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000006071 cream Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- 238000005476 soldering Methods 0.000 abstract description 7
- 239000011324 bead Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an SMD full-color LED packaging structure based on a flip-chip process, which comprises a support and an RGB chip set, wherein a cavity is arranged in the support, the bottom surface of the cavity is flush, a plurality of parallel isolation plates are arranged on the bottom surface of the cavity, the isolation plates divide the bottom surface of the cavity into three die bonding areas, a plurality of pins are arranged on the bottom surface outside the support, the RGB chip set is fixed on the three die bonding areas in a flip-chip mode through solder paste, and RGB chips of the three die bonding areas are positioned on the same straight line. The invention has the beneficial effects that: 1. the adjacent die bonding areas are isolated through the isolation plate, so that the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering is prevented; 2. the three chips are consistent in height and are arranged in a straight line, so that the light efficiency is improved; 3. the pin is provided with a through hole, so that the pushing force of the lamp bead and the PCB is effectively increased after the lamp bead is attached to the PCB pad, and the problem of lamp falling caused by collision is solved.
Description
Technical Field
The invention relates to the technical field of semiconductor lighting, in particular to an SMD full-color LED packaging structure based on a flip-chip technology.
Background
In the prior art, with the development of science and technology, LED products are gradually popularized. The LED product has the advantages that: the LED has the advantages of environmental protection, low power consumption, high luminous efficiency, long service life, no maintenance, safety, reliability, quick response and startup, and rich colors, and along with the continuous development of the industry, the LED with the SMD structure has the advantages of light weight, smaller size, automatic installation, large luminous angle, uniform color, slow light decay, easy storage and the like, and is more and more popular. However, the SMD package in the market has chip offset and uneven height.
Like a flip-chip SMD LED packaging structure of chinese patent publication No. CN209822681U, use the SMD support that has the boss, with the solder paste point in the recess of support, with CSP frame on the boss, realize CSP and SMD support's connection through reflow soldering, this structure has controlled solder paste thickness, has restricted CSP displacement, has reduced the risk that CSP drops after voidage and secondary backward flow. However, this patent still does not solve the problem of occurrence of tin-bridging during the solder-dispensing and reflow process.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: and the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering of adjacent die bonding areas is prevented.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the utility model provides a full-color LED packaging structure of SMD based on flip-chip technology, includes support and RGB chipset, the inside cavity that is equipped with of support, the cavity bottom surface flushes, the cavity bottom surface is equipped with the division board that a plurality of is parallel, the division board divides the cavity bottom surface into three solid brilliant region, the outside bottom surface of support is equipped with a plurality of pins, the RGB chipset passes through the tin cream flip-chip to be fixed on three solid brilliant region, the RGB chip in three solid brilliant region is located same straight line. The support pins are connected with the PCB welding plate; the adjacent die bonding areas are isolated through the isolation plate, so that the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering is prevented; the bottom surfaces of the cavities are flush, and the three chips fixed in the die bonding area are positioned at the same height, so that the phenomenon that the display is reddish due to height difference is prevented; the three chips are positioned on the same straight line, and the problem of poor red, green and blue angle matching is solved.
Preferably, the bottoms of the pins are provided with through holes. Make the lamp pearl paste effectively increase the thrust that lamp pearl and PCB combine behind the PCB pad, improve the lamp problem that falls that the collision leads to.
Preferably, the pin through hole is filled with solder paste. The bracket and the PCB pad are connected more stably.
Preferably, the solder paste is LED die bonding solder paste.
Preferably, the outer surface of the bracket is plated with silver or gold or with gold or tin.
Preferably, the support pins are electrically conductive. The PCB bonding pad is electrically connected with the bracket through pins, and the bonding pad end provides a power supply to supply power for the LED.
Preferably, the cavity is filled with silica gel, silicone resin or epoxy resin. The silicic acid gel is a high-activity adsorption material, the silicon resin is a thermosetting polysiloxane polymer with a high cross-linking structure, and the epoxy resin is a thermosetting resin which is used for packaging the LED.
The invention has the beneficial effects that: 1. the adjacent die bonding areas are isolated through the isolation plate, so that the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering is prevented; 2. the three chips are consistent in height and are arranged in a straight line, so that the light efficiency is improved; 3. the pin is provided with a through hole, so that the pushing force of the lamp bead and the PCB is effectively increased after the lamp bead is attached to the PCB pad, and the problem of lamp falling caused by collision is solved.
Drawings
Fig. 1 is a schematic diagram of a package structure according to an embodiment.
FIG. 2 is a diagram illustrating a bracket pin according to an embodiment.
Fig. 3 is a schematic diagram of a second package structure according to an embodiment.
FIG. 4 is a diagram of pins of a second bracket according to an embodiment.
Wherein: 1. the device comprises a support, 2 parts of an RGB chip, 3 parts of pins, 4 parts of an isolation plate and 5 parts of a cavity.
Detailed Description
The following further describes the embodiments of the present invention by means of specific examples, in conjunction with the accompanying drawings.
The first embodiment is as follows:
the utility model provides a full-color LED packaging structure of SMD based on flip-chip technology, as shown in figure 1, including support 1 and RGB chip 2 group, RGB chip 2 group is red light chip, green glow chip and blue light chip, 1 inside cavity 5 that is equipped with of support, cavity 5 is the bowl cup shape, 5 bottom surfaces of cavity flush, 5 bottom surfaces of cavity are equipped with the division board 4 of two parallels, division board 4 divides 5 bottom surfaces of cavity into three solid brilliant regions, as shown in figure 2, 1 outside bottom surface of support is equipped with four pins 3, pin 3 bottom all is equipped with the through-hole. Make the lamp pearl paste effectively increase the thrust that lamp pearl and PCB combine behind the PCB pad, improve the lamp problem that falls that the collision leads to. And the through holes of the pins 3 are filled with solder paste, and the solder paste is LED die bonding solder paste. So that the bracket 1 is more firmly connected with the PCB pad.
The RGB chips 2 group are fixed on the three die bonding areas through solder paste in an inverted mode, and the RGB chips 2 in the three die bonding areas are located on the same straight line. The pin 3 of the bracket 1 is connected with the PCB welding plate; the adjacent die bonding areas are isolated by the isolation plate 4, so that the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering is prevented; the bottom surfaces of the cavities 5 are flush, and the three chips fixed in the die bonding area are positioned at the same height, so that the phenomenon that the display is reddish due to height difference is prevented; the three chips are positioned on the same straight line, and the problem of poor red, green and blue angle matching is solved.
The outer surface of the bracket 1 is plated with silver, gold or tin. The outer surface of the bracket 1 is prevented from being oxidized, and meanwhile, the conductivity of silver is better than that of copper and iron materials, so that the conductivity of the bracket 1 is improved. Pin 3 of the bracket 1 is conductive. The PCB bonding pad is electrically connected with the bracket 1 through the pin 3, and the bonding pad end provides a power supply to supply power for the LED.
The cavity 5 is filled with silica gel, silicone resin or epoxy resin. The silicic acid gel is a high-activity adsorption material, the silicon resin is a thermosetting polysiloxane polymer with a high cross-linking structure, and the epoxy resin is a thermosetting resin which is used for packaging the LED.
Example two:
in this embodiment, a further improvement is made on the basis of the first embodiment, as shown in fig. 3, in this embodiment, the number of the partition walls is increased, so that the inner wall of the cavity 5 is also isolated from the die bonding region; as shown in fig. 4, in this embodiment, the number of pins 3 of the bracket 1 is changed to 6, and the area of the pins 3 is increased, so that the pushing force of the combination of the lamp beads and the PCB is stronger.
The rest of the structure is the same as the first embodiment.
The invention has the beneficial effects that: 1. the adjacent die bonding areas are isolated by the isolation plate 4, so that the phenomenon of tin connection in the processes of tin paste dispensing and reflow soldering is prevented; 2. the three chips are consistent in height and are arranged in a straight line, so that the light efficiency is improved; 3. pin 3 division through-hole for the lamp pearl effectively increases the thrust that lamp pearl and PCB combine after pasting the PCB pad, improves the lamp problem that falls that the collision leads to.
The above embodiment is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and other variations and modifications may be made without departing from the technical scope of the claims.
Claims (7)
1. The utility model provides a full-color LED packaging structure of SMD based on flip-chip technology, its characterized in that, includes support and RGB chipset, the inside cavity that is equipped with of support, the cavity bottom surface flushes, the cavity bottom surface is equipped with the division board that a plurality of is parallel, the division board divides the cavity bottom surface into three solid brilliant region, the outside bottom surface of support is equipped with a plurality of pins, the RGB chipset passes through the tin cream flip-chip to be fixed on three solid brilliant region, the RGB chip in three solid brilliant region is located same straight line.
2. The SMD full-color LED package structure based on the flip-chip technology as claimed in claim 1, wherein the bottom of each pin is provided with a through hole.
3. The SMD full-color LED package structure based on the flip-chip technology as recited in claim 2, wherein said pin through hole is filled with solder paste.
4. The SMD full-color LED package structure based on the flip-chip technology as claimed in claim 1, wherein said solder paste is LED die bond solder paste.
5. The SMD full-color LED package structure based on the flip-chip technology of claim 1 or 2, wherein the outer surface of the support is plated with silver or gold or tin.
6. The SMD full-color LED package structure based on the flip-chip technology of claim 1, wherein the support pins are electrically conductive.
7. The SMD full-color LED package structure based on the flip-chip technology as claimed in claim 1, wherein the cavity is filled with silica gel or silicone resin or epoxy resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011164322.1A CN112382713A (en) | 2020-10-27 | 2020-10-27 | SMD full-color LED packaging structure based on flip-chip technology |
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CN202011164322.1A CN112382713A (en) | 2020-10-27 | 2020-10-27 | SMD full-color LED packaging structure based on flip-chip technology |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113921686A (en) * | 2021-09-14 | 2022-01-11 | 深圳市同一方光电技术有限公司 | Method and device for manufacturing SMD (surface mounted device) packaging device and storage medium |
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CN113921686A (en) * | 2021-09-14 | 2022-01-11 | 深圳市同一方光电技术有限公司 | Method and device for manufacturing SMD (surface mounted device) packaging device and storage medium |
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