CN112368817B - Pick-up system for semiconductor die - Google Patents

Pick-up system for semiconductor die Download PDF

Info

Publication number
CN112368817B
CN112368817B CN201980044462.4A CN201980044462A CN112368817B CN 112368817 B CN112368817 B CN 112368817B CN 201980044462 A CN201980044462 A CN 201980044462A CN 112368817 B CN112368817 B CN 112368817B
Authority
CN
China
Prior art keywords
semiconductor die
pressure
time
pick
peeling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980044462.4A
Other languages
Chinese (zh)
Other versions
CN112368817A (en
Inventor
马诘邦彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Publication of CN112368817A publication Critical patent/CN112368817A/en
Application granted granted Critical
Publication of CN112368817B publication Critical patent/CN112368817B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor die pick-up system (500) for picking up a semiconductor die (15) includes: a control unit (150) for controlling the peeling operation for peeling the semiconductor die (15) from the dicing sheet (12) at the time of picking up; and a storage unit (152) for storing a correspondence (a rank table (159) and a parameter table (160)) that associates each semiconductor die (15) in a single wafer with any one of a plurality of predetermined peeling operations. The control unit (150) reads the correspondence relation from the storage unit (152), and when picking up each semiconductor die (15) of one wafer, peels the semiconductor die (15) from the dicing sheet (12) and picks up the semiconductor die according to the peeling operation in which the correspondence relation is established with each semiconductor die (15). Thus, the pick-up of the semiconductor die can be performed by applying the peeling action suitable for each semiconductor die in one wafer.

Description

Pick-up system for semiconductor die
Technical Field
The present invention relates to a pick up (pick up) system for a semiconductor die of a bonding system.
Background
Semiconductor die are manufactured by cutting 6 inch (inch) or 8 inch sized wafers (wafer) into predetermined sizes. At the time of dicing, a dicing sheet (dicing sheet) is attached to the back surface, and the wafer is diced by a dicing saw or the like from the front surface side so as not to cause the semiconductor die after dicing to fall seven to eight. At this time, the dicing sheet attached to the back surface is slightly cut into but not cut into the state where each semiconductor die is held. The individual semiconductor dies that are cut are then picked up one by one from the dicing sheet and sent to the next step of die bonding (die bonding) or the like.
As a method of picking up a semiconductor die from a dicing sheet, the following method is proposed: in a state in which a dicing sheet is sucked onto the surface of a disk-shaped suction plate and a semiconductor die is sucked onto a suction head (coliet), the semiconductor die is lifted up by a top block (block) arranged in the center portion of the suction plate, and the suction head is lifted up, whereby the semiconductor die is picked up from the dicing sheet (for example, see fig. 9 to 23 of patent document 1). In peeling a semiconductor die from a dicing sheet, it is effective to peel the peripheral portion of the semiconductor die first and then peel the central portion of the semiconductor die, so in the conventional technique described in patent document 1, the following method is adopted, namely: the top block is divided into 3 blocks, i.e., a block for lifting up the peripheral portion of the semiconductor die, a block for lifting up the center of the semiconductor die, and a block for lifting up the middle of the semiconductor die, and the top block is raised to a predetermined height, and then the middle and center blocks are raised to be higher than the peripheral blocks, and finally the center block is raised to be higher than the middle block.
In addition, the following methods have also been proposed: in a state in which a dicing sheet is sucked onto the surface of a disk-shaped cap and a semiconductor die is sucked onto a suction head, the suction head and peripheral, intermediate, and central top blocks are raised to a predetermined height above the surface of the cap, and then the height of the suction head is maintained, and the top blocks are lowered to a position below the surface of the cap in the order of the peripheral top blocks and the intermediate top blocks, whereby the dicing sheet is peeled from the semiconductor die (for example, see patent document 2).
When the dicing sheet is peeled from the semiconductor die by the method described in patent document 1 or patent document 2, the semiconductor die may be bent and deformed together with the dicing sheet while still attached to the dicing sheet before the semiconductor die is peeled as described in fig. 40, 42, and 44 of patent document 1 and fig. 4A to 4D and 5A to 5D of patent document 2. If the peeling operation of the dicing sheet is continued in a state where the semiconductor die is bent and deformed, the semiconductor die may be broken, and therefore the following method has been proposed: as shown in fig. 31 of patent document 1, the bending of the semiconductor die is detected based on the flow rate change of the suction air from the suction head, and when the suction flow rate is detected as shown in fig. 43 of patent document 1, it is determined that the semiconductor die has been deformed and the top block is temporarily lowered, and then the top block is raised again. Patent document 3 also discloses detecting (discriminating) bending (flexing) of the semiconductor die based on a change in the flow rate of suction air from the suction head.
Prior art literature
Patent literature
Patent document 1: japanese patent No. 4945339
Patent document 2: U.S. Pat. No. 8092645 Specification
Patent document 3: japanese patent No. 5813432
Disclosure of Invention
Problems to be solved by the invention
In recent years, semiconductor dies have become extremely thin, for example, about 20 μm. On the other hand, since the thickness of the dicing sheet is about 100 μm, the thickness of the dicing sheet is 4 to 5 times the thickness of the semiconductor die. If such a thin semiconductor die is to be peeled from the dicing sheet, deformation of the semiconductor die following the deformation of the dicing sheet tends to be more significantly generated. According to patent document 1, since the bending of the semiconductor die is detected and the peeling operation is changed, there is a possibility that damage to the semiconductor die can be suppressed when the semiconductor die is picked up from the dicing sheet.
However, since the peeling operation is changed (i.e., changed in time) while detecting the bending of the semiconductor die being picked up, the control of the pick up becomes very complicated. The series of processes of detecting the bending of the semiconductor die, determining whether to change the peeling operation based on the detection result, and advancing the operation without changing the peeling operation based on the determination result are repeated a plurality of times, and therefore there is a concern that the time taken for the peeling operation may be long. Therefore, in practice, the peeling operation is applied uniformly to all semiconductor dies assuming that the semiconductor die which is most difficult to peel is not changed in such an immediate peeling operation in many cases. However, in this case, the long-time peeling operation is also applied to the semiconductor die which can be peeled off easily and is originally applied with the simplified short-time peeling operation, and the pickup speed is low. It is desirable to apply a peeling operation suitable for each semiconductor die, and to balance the suppression of damage to the semiconductor die and the increase in the pick-up speed of the semiconductor die for each semiconductor die.
In addition, depending on the position of the semiconductor die in the wafer, the peelability of the semiconductor die from the dicing sheet may sometimes change. For example, the peelability (easy peelability or difficult peelability) may change gradually from the semiconductor die near the center to the semiconductor die near the outer periphery in the wafer. Alternatively, for example, the peelability of a semiconductor die in a specific region of a wafer may be significantly different from the peelability of a semiconductor die in other regions. Such a tendency of peelability corresponding to the position of the semiconductor die of the wafer is the same in many cases in a plurality of wafers that are successively picked up. When semiconductor dies of a plurality of wafers are continuously picked up, the picking up speed can be increased by applying a peeling operation for a short time to the semiconductor die at a position where the semiconductor die is easily peeled. The peeling operation suitable for each semiconductor die is applied according to the peelability of each position of the semiconductor die, and the damage suppression of the semiconductor die and the pickup speed of the semiconductor die can be balanced appropriately. In order to achieve the above, a structure for grasping the peelability of each semiconductor die corresponding to the position of each semiconductor die of the wafer is required. In addition, after the peelability of each semiconductor die corresponding to the position of each semiconductor die of the wafer is grasped, or in the case where the peelability can be grasped in advance, a structure for applying the peeling operation suitable for each semiconductor die of the wafer is required.
The present invention aims to enable picking up of each semiconductor die by applying a peeling action (picking up action) suitable for each semiconductor die. Alternatively, the present invention aims to grasp the peelability of each semiconductor die corresponding to the position of each semiconductor die of a wafer.
Technical means for solving the problems
The pickup system for a semiconductor die according to the present invention is a pickup system for picking up a semiconductor die obtained by dicing a wafer by peeling the semiconductor die from a dicing sheet, and includes: a suction head for sucking the semiconductor die; a suction mechanism connected to the suction head for sucking air from the surface of the suction head; a flow sensor that detects a suction air flow rate of the suction mechanism; a control unit that controls a pickup action based on a pickup condition to pick up the semiconductor die from the dicing sheet; an acquisition unit that acquires actual flow information indicating a temporal change in the suction air flow rate detected by the flow sensor when picking up a semiconductor die; and a generation unit that generates correspondence information in which any one of a plurality of pickup conditions and individual information of the semiconductor die are associated with each other, based on the acquired actual flow information, the control unit performing control of picking up the semiconductor die from the dicing sheet in accordance with the correspondence information in which each semiconductor die is associated with each semiconductor die when picking up the semiconductor die.
In the pick-up system for semiconductor die of the present invention, it may be configured that the generation unit generates: a rank table that associates each semiconductor die in a wafer with a rank value that is an identifier of a plurality of pickup conditions; and a condition table for establishing a correspondence between any one of the plurality of level values and any one of the pickup conditions, the correspondence information being determined by the level table and the condition table.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the plurality of gradation values are values indicating the length of time required for pickup.
In the pick-up system of a semiconductor die of the present invention, it may be also provided to include: a display unit for displaying a screen; and a display control unit that displays, on the display unit, a map image obtained by imitating each semiconductor die of one wafer, wherein at least one of a color, a pattern, a letter, a number, and a mark corresponding to the gradation value is added to the semiconductor die image corresponding to the semiconductor die having the correspondence with the gradation value.
In the pick-up system of a semiconductor die of the present invention, it may be also provided to include: and an input unit for inputting information, wherein the generating unit receives selection of one or more semiconductor die images on the mapping image and selection of one of a plurality of gradation values from the input unit, and generates or updates the gradation table by associating the selected gradation value with the semiconductor die corresponding to the selected semiconductor die image.
In the pick-up system of a semiconductor die of the present invention, it may be also provided to include: and a storage unit for storing expected flow rate information indicating a time change in suction air flow rate detected by the flow rate sensor at the time of picking up the semiconductor die when the semiconductor die is peeled off from the dicing sheet, wherein the acquisition unit acquires actual flow rate information indicating a time change in suction air flow rate detected by the flow rate sensor at the time of picking up each semiconductor die in one wafer, and the generation unit obtains correlation values between actual flow rate information and expected flow rate information of each of the plurality of semiconductor dies, and generates or updates a rank table by associating a rank value with each of the plurality of semiconductor dies based on each of the plurality of correlation values.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the display control unit displays the correlation value of each semiconductor die corresponding to each semiconductor die image in the map image of the display unit or in the vicinity of each semiconductor die image, or displays the correlation value of the semiconductor die corresponding to a specific semiconductor die image at a predetermined position on the screen in the display unit.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: in the rank table, a rank value that makes the pickup time shorter as going from the outer peripheral side to the inner peripheral side of one wafer is associated with each semiconductor die.
In the pick-up system of a semiconductor die of the present invention, it may be also provided to include: a stage including an adsorption surface for adsorbing a back surface of the cut sheet; and an opening pressure switching mechanism for switching an opening pressure of an opening provided in the suction surface of the stage between a first pressure close to vacuum and a second pressure close to atmospheric pressure, wherein the control unit performs control for switching the opening pressure between the first pressure and the second pressure when picking up the semiconductor die, and the number of switching times for switching the opening pressure between the first pressure and the second pressure is included in the types of the pick-up conditions.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the kind of the pickup condition includes a holding time for holding the opening pressure at the first pressure.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the semiconductor die picking device comprises a step surface forming mechanism, wherein the step surface forming mechanism comprises a plurality of moving elements, the plurality of moving elements are arranged in the opening, the front end surface moves between a first position higher than the adsorption surface and a second position lower than the first position, the step surface forming mechanism forms a step surface relative to the adsorption surface, when the semiconductor die is picked up, a control unit controls the plurality of moving elements to sequentially move from the first position to the second position at intervals of a specified time or simultaneously move from the first position to the second position in a combination of the specified moving elements, and the specified time is included in the types of picking conditions.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the kind of pick-up conditions includes the number of said moving elements moving simultaneously from the first position to the second position.
In the pick-up system of a semiconductor die of the present invention, it may also be set to: the type of pickup condition includes a standby time from when a suction head lands on a semiconductor die to when the semiconductor die starts to be lifted.
The pickup system of a semiconductor die of the present invention is a pickup system of a semiconductor die that picks up a semiconductor die attached to a surface of a dicing sheet, comprising: a suction head for sucking the semiconductor die; the suction mechanism is connected with the suction head and sucks air from the surface of the suction head; a flow sensor for detecting the suction air flow rate of the suction mechanism; a control unit that controls a peeling operation for peeling the semiconductor die from the dicing sheet at the time of picking up; and a display unit that displays a screen, wherein the control unit acquires an actual flow rate change that is a time change in suction air flow rate detected by the flow rate sensor when each semiconductor die in one wafer is picked up, and wherein the control unit obtains a peeling easiness or peeling difficulty, that is, peeling degree of a self-dicing sheet of each of the plurality of semiconductor dies based on the actual flow rate change of each of the plurality of semiconductor dies, and displays a map image obtained by imitating each semiconductor die of one wafer on the display unit, and wherein at least one of a color, a pattern, a letter, a number, and a mark corresponding to the peeling degree of the semiconductor die is added to a semiconductor die image corresponding to the semiconductor die for which the peeling degree is obtained in the map image.
ADVANTAGEOUS EFFECTS OF INVENTION
The invention has the following effects: a peeling action (picking action) suitable for each semiconductor die can be applied to pick up each semiconductor die. Alternatively, the present invention has the following effects: the peelability of each semiconductor die corresponding to the position of each semiconductor die of one wafer can be grasped.
Drawings
Fig. 1 is an explanatory diagram showing a system configuration of a pick-up system for semiconductor die according to an embodiment of the present invention.
Fig. 2 is a perspective view showing a stage of a pick-up system for semiconductor die according to an embodiment of the present invention.
Fig. 3 is an explanatory diagram showing a wafer attached to a dicing sheet.
Fig. 4 is an explanatory diagram showing a semiconductor die attached to a dicing sheet.
Fig. 5A is an explanatory diagram showing a configuration of the wafer holder.
Fig. 5B is an explanatory diagram showing the structure of the wafer holder.
Fig. 6 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 7 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 8 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 9 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 10 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 11 is an explanatory diagram showing an operation of the semiconductor die pick-up system according to the embodiment of the present invention at a predetermined level value.
Fig. 12 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 13 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 14 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 15 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 16 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 17 is an explanatory diagram showing an operation of the pick-up system for semiconductor die according to the embodiment of the present invention at a predetermined level value.
Fig. 18 is a graph showing time variations in the suction head height, the column-like moving element position, the intermediate annular moving element position, the peripheral annular moving element position, the opening pressure, and the air leakage amount of the suction head when the pick-up system for semiconductor die according to the embodiment of the present invention is operated at a predetermined level value.
Fig. 19 is a diagram showing an example of a parameter table according to an embodiment of the present invention.
Fig. 20 is a graph showing time variations of a suction head height, a column-like moving element position, an intermediate annular moving element position, a peripheral annular moving element position, and an opening pressure when the pick-up system for semiconductor die according to the embodiment of the present invention is operated at another level value.
Fig. 21 is a graph showing time variations of a suction head height, a column-like moving element position, an intermediate annular moving element position, a peripheral annular moving element position, and an opening pressure when the pick-up system for a semiconductor die according to the embodiment of the present invention is operated at still another level.
Fig. 22 is an explanatory diagram of identification numbers of the semiconductor dies of one wafer according to the embodiment of the present invention.
Fig. 23 is a diagram showing an example of a ranking table according to an embodiment of the present invention.
Fig. 24 is an explanatory diagram showing an example of the rank value associated with each semiconductor die of one wafer.
Fig. 25 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 26 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 27 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 28 is a diagram showing an example of a time change in the opening pressure, an expected flow rate change, and an actual flow rate change in a predetermined period of initial peeling in the embodiment of the present invention.
Fig. 29 is a diagram showing an example of a threshold value table according to an embodiment of the present invention.
Fig. 30 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 31 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 32 is a view showing a setting display screen according to an embodiment of the present invention.
Fig. 33 is an explanatory diagram showing another example of the rank values associated with the semiconductor dies of one wafer.
Fig. 34 is an explanatory diagram showing still another example of the rank values associated with the semiconductor dies of one wafer.
Fig. 35 is an explanatory diagram showing still another example of the rank values associated with the semiconductor dies of one wafer.
Fig. 36 is a functional block diagram of a control unit according to an embodiment of the present invention.
[ description of symbols ]
1. 2, 3, 4, 5, 6, 7, 8: grade
10: wafer holder
11: wafer with a plurality of wafers
12: cutting sheet
12a, 18a: surface of the body
12b: back surface
13: ring(s)
14: gap/cut-in gap
15. 15a, 15b, 15c, 15d, 15e, 15f: semiconductor die
16: expansion ring
17: ring pressing member
18: suction head
19: suction hole
20: platform
22: adsorption surface
23: an opening
23a: inner surface
24: base body part
26: groove(s)
27: adsorption hole
28: upper part
30: moving element
31: moving element/peripheral annular moving element
33: an outer peripheral surface
38a, 38b, 47: front end face
40: moving element/intermediate annular moving element
41: intermediate annular moving element
45: moving element/column-shaped moving element
80: opening pressure switching mechanism
81. 91, 101: three-way valve
82. 92, 102: drive unit
83 to 85, 93 to 95, 103 to 105: piping arrangement
90: adsorption pressure switching mechanism
100: suction mechanism
106: flow sensor
110: wafer holder horizontal direction driving part
120: platform up-down direction driving part
130: suction head driving part
140: vacuum device
150: control unit
151：CPU
152: storage unit
153: device/sensor interface
154: data bus
155: control program
156: setting display program
157: expected flow rate variation
158. 158a, 158b: actual flow rate variation
159: class table
160: parameter meter
161: threshold value table
300: step surface forming mechanism
400: step surface forming mechanism driving part
410: input unit
450: display unit
460: setting a display screen
462: class value button group
464: operating button group
466. 468, 470, 472: push button
478: index (I)
480: mapping images
482. 482a, 482b, 482c: semiconductor die image
486: air bubble
490: window
492: wen Zihe
500: pick-up system for semiconductor die
600: pick-up control unit (control unit)
602: generating unit
604: display control unit
a. 201-207, 210, 212, 214-217, 220, 223, 224, 226-232, 241, 243, 244, 246, 260: arrows
d: gap of
DN1, DN4: the number of moving elements descending at the same time
F 1 ～F 3 : tension force
FSN4, FSN8: number of switching times of opening pressure at initial peeling
H 0 ～H 2 、H 1 -H 0 、H 2 -H 0 Hc,: height of (1)
HT1, HT4, HT8: holding time of first pressure
IT4, IT8: drop time interval between moving elements
P 1 : first pressure of
P 2 : second pressure
PT1, PT4, PT8: pickup time
SSN1, SSN4, SSN8: number of times of switching of opening pressure at the time of main peeling
t, t1 to t16, tr_exp, tr_rel, tc_end: time of day
TH1: threshold/underside threshold
TH2: threshold/upper threshold
WT1, WT4, WT8: suction head standby time
X, Y: direction of
τ: shear stress
Detailed Description
< constitution >
Hereinafter, a pickup system for a semiconductor die according to an embodiment of the present invention will be described with reference to the accompanying drawings. As shown in fig. 1, a pick-up system 500 of a semiconductor die of the present embodiment includes: a wafer holder 10 holding a dicing sheet 12 and moving in a horizontal direction, the dicing sheet 12 having a semiconductor die 15 attached to a surface 12 a; a stage 20 disposed on the lower surface of the wafer holder 10 and including an adsorption surface 22, the adsorption surface 22 adsorbing the back surface 12b of the dicing sheet 12; a plurality of moving elements 30 disposed in the openings 23 provided in the suction surface 22 of the stage 20; a step surface forming mechanism 300 for forming a step surface with respect to the suction surface 22; a step surface forming mechanism driving section 400 for driving the step surface forming mechanism 300; a suction head 18 for picking up the semiconductor die 15; an opening pressure switching mechanism 80 for switching the pressure of the opening 23 of the stage 20; an adsorption pressure switching mechanism 90 for switching the adsorption pressure of the adsorption surface 22 of the stage 20; a suction mechanism 100 that sucks air from the surface 18a of the suction head 18; a Vacuum Apparatus (VAC) 140; a wafer holder horizontal direction driving section 110 that drives the wafer holder 10 in the horizontal direction; a stage up-down direction driving unit 120 for driving the stage 20 in the up-down direction; a suction head driving unit 130 for driving the suction head 18 in the up-down-left-right direction; a control unit 150 that controls the pick-up system 500 for the semiconductor die; an input unit 410 which is a keyboard, a mouse, or the like for inputting information; and a display unit 450 which is a display for displaying a screen.
The step surface forming mechanism 300 and the step surface forming mechanism driving section 400 are housed in the base section 24 of the stage 20. The step surface forming mechanism 300 is located at the upper portion 28 of the stage 20, and the step surface forming mechanism driving portion 400 is located at the lower portion of the stage 20. The step surface forming mechanism 300 includes a plurality of moving elements 30 that move in the up-down direction. By the step surface forming mechanism driving section 400, the distal end surfaces of the plurality of moving elements 30 move downward as indicated by arrow a in fig. 1. Details of the moving element 30 will be described later.
The opening pressure switching mechanism 80 for switching the pressure of the opening 23 of the stage 20 includes a three-way valve 81 and a driving unit 82 for driving the three-way valve 81 to open and close. The three-way valve 81 has 3 ports (ports), a first port is connected to the base portion 24 communicating with the opening 23 of the stage 20 by a pipe 83, a second port is connected to the vacuum apparatus 140 by a pipe 84, and a third port is connected to a pipe 85 open to the atmosphere. The driving part 82 connects the first port with the second portBreaking the third port to set the pressure of the opening 23 to a first pressure P close to vacuum 1 Or the first port is communicated with the third port to block the second port so as to set the pressure of the opening 23 to a second pressure P close to the atmospheric pressure 2 Thereby, at the first pressure P 1 And a second pressure P 2 The pressure of the opening 23 is switched between.
The adsorption pressure switching mechanism 90 for switching the adsorption pressure on the adsorption surface 22 of the stage 20 includes a three-way valve 91 having 3 ports and a driving unit 92 for driving the three-way valve 91 to open and close, similarly to the opening pressure switching mechanism 80, and the first port is connected to the adsorption hole 27 communicating with the tank 26 of the stage 20 by a pipe 93, the second port is connected to the vacuum device 140 by a pipe 94, and the third port is connected to a pipe 95 open to the atmosphere. The driving part 92 communicates the first port with the second port to block the third port so as to set the pressure of the tank 26 or the adsorption surface 22 to a third pressure P close to the vacuum 3 Or the first port is communicated with the third port to block the second port, so that the pressure of the tank 26 or the adsorption surface 22 is set to be a fourth pressure P close to the atmospheric pressure 4 Thereby, at the third pressure P 3 And a fourth pressure P 4 The pressure of the tank 26 or the suction surface 22 is switched.
The suction mechanism 100 for sucking air from the surface 18a of the suction head 18 includes a three-way valve 101 having 3 ports, a driving unit 102 for driving the three-way valve 101 to open and close, the first port being connected to the suction hole 19 communicating with the surface 18a of the suction head 18 by a pipe 103, the second port being connected to the vacuum device 140 by a pipe 104, and the third port being connected to a pipe 105 open to the atmosphere, similarly to the opening pressure switching mechanism 80. The driving unit 102 causes the first port to communicate with the second port to block the third port, and sucks air from the surface 18a of the suction head 18 to set the pressure of the surface 18a of the suction head 18 to a pressure close to vacuum, or causes the first port to communicate with the third port to block the second port, thereby setting the pressure of the surface 18a of the suction head 18 to a pressure close to atmospheric pressure. A flow sensor 106 is attached to the pipe 103 connecting the suction hole 19 of the suction head 18 and the three-way valve 101, and the flow sensor 106 detects the flow rate of air sucked from the surface 18a of the suction head 18 to the vacuum apparatus 140 (suction air flow rate).
The wafer holder horizontal direction driving section 110, the stage vertical direction driving section 120, and the tip driving section 130 drive the wafer holder 10, the stage 20, and the tip 18 in the horizontal direction, the vertical direction, or the like, by, for example, a motor and a gear (gear) provided inside.
The control unit 150 is a computer (computer) including a central processing unit (Central Processing Unit, CPU) 151, a storage unit 152, and an equipment/sensor interface (interface) 153, which perform various arithmetic processing or control processing, and the CPU 151, the storage unit 152, and the equipment/sensor interface 153 are connected by a data bus (databus) 154. The storage unit 152 stores: a control program 155 for performing pickup control of the semiconductor die 15; setting a display program 156 for associating the peeling operation at the time of picking up with each semiconductor die 15 of one wafer; a rank table 159 (see fig. 23) associates each semiconductor die 15 of a single wafer with a rank value of the peeling operation; a parameter table 160 (see fig. 19) in which the gradation value and the parameter values of the various peeling parameters are associated with each other; expected flow rate change 157 is a time change of suction air flow rate detected by flow sensor 106 at the time of pickup in the case where peeling of semiconductor die 15 from dicing sheet 12 is good; the actual flow rate change 158 is a time change in the suction air flow rate actually detected by the pick-up time flow sensor 106. Fig. 36 is a functional block diagram of the control unit 150. The control unit 150 functions as a pickup control unit 600 (control unit) by executing the control program 155. The control unit 150 executes the setting display program 156 to function as a generating means 602 and a display control means 604 described later.
As shown in fig. 1, the opening pressure switching mechanism 80, the suction pressure switching mechanism 90, the three-way valves 81 and 91 of the suction mechanism 100, the driving units 82 and 92 of the three-way valves 101, the driving unit 102, the step surface forming mechanism driving unit 400, the wafer holder horizontal direction driving unit 110, the stage vertical direction driving unit 120, the tip driving unit 130, and the vacuum apparatus 140 are connected to the equipment/sensor interface 153, respectively, and are driven in accordance with instructions from the control unit 150. The flow sensor 106 is connected to the device/sensor interface 153, and the detection signal is introduced into the control unit 150 and processed. The input unit 410 and the display unit 450 are also connected to the device/sensor interface 153, and input information from the input unit 410 is input to the control unit 150, and output image information from the control unit 150 is sent to the display unit 450.
Next, details of the suction surface 22 of the stage 20 and the moving element 30 will be described. As shown in fig. 2, the stage 20 has a cylindrical shape, and a planar suction surface 22 is formed on the upper surface. A square opening 23 is provided in the center of the suction surface 22, and a moving element 30 is mounted in the opening 23. As shown in fig. 6, a gap d is provided between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving element 30. As shown in fig. 2, a groove 26 is provided around the opening 23 so as to surround the opening 23. Each tank 26 is provided with a suction hole 27, and each suction hole 27 is connected to a suction pressure switching mechanism 90.
As shown in fig. 2, the moving element 30 includes a centrally disposed column-shaped moving element 45; two intermediate annular moving elements 40 and 41 disposed around the columnar moving element 45; and a peripheral annular moving element 31 disposed around the intermediate annular moving element 40 and disposed on the outermost periphery. Further, the number of intermediate annular moving elements is two here, but the number of intermediate annular moving elements may be one or more than three. In fig. 6 and the following drawings, the number of intermediate annular moving elements 40 is one for simplicity of description. As shown in fig. 6, the front end surfaces 47, 38b, 38a of the columnar moving element 45, the intermediate annular moving element 40, and the peripheral annular moving element 31 are located at a height H from the suction surface 22 of the stage 20 0 And constitutes the same plane (level difference plane with respect to the suction plane 22). When picking up the semiconductor die 15, the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45 are moved from the first position to the second position lower than the first position at predetermined time intervals in this order. Alternatively, a combination of predetermined moving elements is used And then from the first position to the second position.
< step of setting (set) of cut sheet >
Here, a step of disposing the dicing sheet 12 to which the semiconductor die 15 is attached to the wafer holder 10 will be described. As shown in fig. 3, an adhesive dicing sheet 12 is attached to the back surface of the wafer 11, and the dicing sheet 12 is attached to a metal ring (ring) 13. The wafer 11 is subjected to processing (handling) in a state of being attached to the metal ring 13 via the dicing sheet 12 in this way. As shown in fig. 4, the wafer 11 is cut from the front surface side by a dicing saw or the like in the cutting step, and the semiconductor die 15 are formed. Between the semiconductor dies 15, a dicing gap 14 formed at the time of dicing is formed. The depth of the dicing gap 14 is from the semiconductor die 15 to a part of the dicing sheet 12, but the dicing sheet 12 is not cut, and each semiconductor die 15 is held by the dicing sheet 12.
As described above, the semiconductor die 15 mounted with the dicing sheet 12 and the ring 13 is mounted on the wafer holder 10 as shown in fig. 5A and 5B. The wafer holder 10 includes: an annular expansion ring (expansion ring) 16 having a flange portion; and a ring presser 17 for fixing the ring 13 to the flange of the extension ring 16. The ring presser 17 is driven in a direction advancing and retreating toward the flange of the expansion ring 16 by a ring presser driving section, not shown. The inner diameter of the extension ring 16 is larger than the diameter of the wafer on which the semiconductor die 15 is arranged, the extension ring 16 has a predetermined thickness, and the flange is located outside the extension ring 16 and is attached to the end face side in the direction away from the dicing sheet 12 so as to protrude outward. In addition, the outer periphery of the expansion ring 16 on the cut sheet 12 side is formed in a curved surface so that the cut sheet 12 can be smoothly drawn when the cut sheet 12 is attached to the expansion ring 16. As shown in fig. 5B, the dicing sheet 12 to which the semiconductor die 15 is attached is in a substantially planar state before being set on the extension ring 16.
As shown in fig. 1, when the cut sheet 12 is set on the extension ring 16, the step between the upper surface of the extension ring 16 and the flange surface is drawn along the curved surface of the upper portion of the extension ring, and thus a tensile force from the center of the cut sheet 12 toward the periphery acts on the cut sheet 12 fixed to the extension ring 16. Further, the dicing sheet 12 is stretched by the tensile force, and therefore the gap 14 between the semiconductor dies 15 attached to the dicing sheet 12 is widened.
< pickup action >
Next, a pickup operation of the semiconductor die 15 will be described. The peelability of each semiconductor die 15 from the dicing sheet 12 sometimes varies depending on the position of each semiconductor die 15 in one wafer. For example, the peeling easiness (peelability) may gradually increase from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in the wafer. The reason for this is considered to be: when the dicing sheet 12 is set to the extension ring 16 of the wafer holder 10, the vicinity of the center of the dicing sheet 12 is more stretched than the vicinity of the outer periphery, and thus the ease of peeling of the semiconductor die 15 in the vicinity of the center of the wafer is further improved. Such a tendency of peelability corresponding to the position of the semiconductor die 15 of the wafer is the same in many cases in a plurality of wafers that are successively picked up. When the semiconductor die 15 of a plurality of wafers are continuously picked up, the pickup can be made faster by applying a simplified short-time peeling operation (pickup operation) to the semiconductor die 15 at a position where peeling is easy, and on the other hand, damage or pickup error of the semiconductor die 15 can be suppressed by applying a long-time peeling operation (pickup operation) to the semiconductor die 15 at a position where peeling is difficult. Therefore, the semiconductor die pickup system 500 according to the present embodiment can change the peeling operation at the time of pickup according to the semiconductor die 15 in one wafer.
The storage unit 152 stores: as shown in the rank table 159 of fig. 23, the identification number (also referred to as a die identification number or individual information) of each semiconductor die 15 added in accordance with the position of each semiconductor die 15 in one wafer is associated with a rank value; and a parameter table 160 (condition table) shown in fig. 19, which associates each grade value with a parameter value (also referred to as a pickup condition) of a plurality of peeling parameters. The applied peeling operation (parameter value of peeling parameter) is associated with each semiconductor die 15 in one wafer by the level table 159 and the parameter table 160. In the present embodiment, the rank value defines a rank 1 from which the time required for the peeling operation (pickup time) is shortest to a rank 8 which the time required for the peeling operation (pickup time) is longest. Before the pick-up operation, the operator or the like creates a rank table 159 by associating rank values with the semiconductor dies 15 through a setting display screen 460 (see fig. 25) described later, taking into consideration the peelability of the semiconductor dies 15 corresponding to the positions of the semiconductor dies 15 in the wafer. In the pickup operation, the level table 159 is referred to, and the peeling operation (pickup operation) is performed for each semiconductor die 15 in one wafer based on the level value for which the correspondence is established. Hereinafter, the picking-up operation of the semiconductor die 15 performed by the peeling operation of level 4 of the application parameter table 160 will be described as an example. The various peeling parameters of the parameter table 160 and the setting display screen 460 will be described in detail later.
The control unit 150 executes the control program 155 shown in fig. 1 to function as pickup control means for controlling the pickup operation of the semiconductor die 15. The control section 150 controls a peeling operation for peeling the semiconductor die 15 from the dicing sheet 12 as a part of the pickup operation. The control unit 150 first moves the wafer holder 10 in the horizontal direction by the wafer holder horizontal direction driving unit 110 until the wafer holder is above the standby position of the stage 20. Then, the control unit 150 temporarily stops the movement of the wafer holder 10 in the horizontal direction after moving the wafer holder 10 to a predetermined position above the standby position of the stage 20. As described above, in the initial state, the front end surfaces 47, 38b, 38a of the moving elements 45, 40, 31 are located at the height H from the suction surface 22 of the stage 20 0 The control unit 150 raises the stage 20 by the stage vertical driving unit 120 until the front end surfaces 47, 38b, 38a of the moving elements 45, 40, 31 are brought into close contact with the back surface 12b of the cut sheet 12, and the region of the suction surface 22 slightly separated from the opening 23 is brought into close contact with the back surface 12b of the cut sheet 12. In each of the moving elements 45, 40 The front end surfaces 47, 38b, 38a and the suction surface 22 of the cutter sheet 12 are brought into close contact with the rear surface 12b of the cutter sheet 12 in a region slightly separated from the opening 23, and then the control unit 150 stops the raising of the stage 20. Then, the control section 150 adjusts the horizontal position again by the wafer holder horizontal direction driving section 110 so that the semiconductor die 15 to be picked up comes directly above the front end face (step face) of the moving element 30 which protrudes slightly from the suction face 22 of the stage 20.
As shown in fig. 6, the semiconductor die 15 is smaller in size than the opening 23 of the stage 20 and larger than the width or depth of the movable element 30, and therefore, when the position adjustment of the stage 20 is completed, the outer peripheral end of the semiconductor die 15 is located between the inner surface 23a of the opening 23 of the stage 20 and the outer peripheral surface 33 of the movable element 30, that is, directly above the gap d between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the movable element 30. In the initial state, the pressure of the groove 26 or the suction surface 22 of the stage 20 is atmospheric pressure, and the pressure of the opening 23 is also atmospheric pressure. In the initial state, the front end surfaces 47, 38b, 38a of the moving elements 45, 40, 31 are located at a height H from the suction surface 22 of the stage 20 0 Therefore, the height of the back surface 12b of the cut sheet 12 contacting the front end surface 47, the front end surface 38b, and the front end surface 38a is also set at a height H protruding from the suction surface 22 0 Is provided for the first position of (a). The back surface 12b of the cut sheet 12 slightly floats from the suction surface 22 at the periphery of the opening 23, and is brought into close contact with the suction surface 22 in a region away from the opening 23. After the position adjustment in the horizontal direction is completed, the control unit 150 lowers the suction head 18 onto the semiconductor die 15 by the suction head driving unit 130 shown in fig. 1, and lands the surface 18a of the suction head 18 on the semiconductor die 15.
Fig. 18 is a graph showing the time-varying height of the suction head 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, the opening pressure of the opening 23, and the air leakage amount of the suction head 18 at the time of the peeling operation (pickup operation) of the stage 4. The height of the surface 18a of the cleaner head 18 is shown in fig. 18 (a), and at a time t=0 (height Hc 1 ) Starting upThe suction head 18 is moved from the moment of a small amount to the moment t 2. At time t1 during which the suction head 18 is moved, the control unit 150 switches the three-way valve 101 by the driving unit 102 of the suction mechanism 100 to a direction in which the suction hole 19 of the suction head 18 communicates with the vacuum apparatus 140 (see arrow 301 in fig. 7). As a result, the suction hole 19 becomes negative pressure, and air flows into the suction hole 19 from the surface 18a of the suction head 18, so that the suction air flow rate (air leakage amount) detected by the flow sensor 106 gradually increases from time t1 to time t2 as shown in fig. 18 (f). At time t2, when the suction head 18 lands on the semiconductor die 15, the semiconductor die 15 is sucked and fixed to the surface 18a, and air cannot flow from the surface 18 a. Thus, at time t2, the air leakage amount detected by the flow sensor 106 is reduced. As shown in fig. 6, the height of the surface 18a of the suction head 18 when the suction head 18 is landed on the semiconductor die 15 is set to be the height (the height H from the suction surface 22) of the front end surface 47, the front end surface 38b, and the front end surface 38a of each of the moving elements 45, 40, and 31 0 ) Plus the height Hc obtained by cutting the thickness of the sheet 12 and the thickness of the semiconductor die 15.
Next, at time t2 shown in fig. 18, the control unit 150 outputs a fourth pressure P that brings the suction pressure (not shown) of the suction surface 22 of the platen 20 from near atmospheric pressure 4 Third pressure P switched to near vacuum 3 Is a command of (a). In response to the instruction, the driving unit 92 of the suction pressure switching mechanism 90 switches the three-way valve 91 in a direction to communicate the suction hole 27 with the vacuum apparatus 140. Then, as shown by arrow 201 in fig. 7, arrow 211 in fig. 10, arrow 213 in fig. 11, arrow 221 in fig. 13, arrow 225 in fig. 14, arrow 242 in fig. 16, and arrow 245 in fig. 17, the air in the tank 26 is sucked into the vacuum apparatus 140 through the suction hole 27, and the suction pressure becomes a third pressure P close to the vacuum 3 . The back surface 12b of the cut sheet 12 around the opening 23 is vacuum-sucked to the surface of the suction surface 22 as indicated by an arrow 202 in fig. 7. The front end surfaces 47, 38b, 38a of the moving elements 45, 40, 31 are located at a height H from the suction surface 22 of the stage 20 0 Thus applying a downward-directed tensile force F to the cut sheet 12 1 . Said stretching force F 1 Can be decomposed into a stretching force F for stretching the cut sheet 12 in the transverse direction 2 And a stretching force F stretching the cut sheet 12 in a downward direction 3 . Stretching force F in transverse direction 2 A shear stress τ is created between the semiconductor die 15 and the surface 12a of the dicing sheet 12. Due to the shear stress τ, a deviation occurs between the outer peripheral portion or peripheral portion of the semiconductor die 15 and the surface 12a of the dicing sheet 12. The deviation becomes a trigger for peeling off the dicing sheet 12 from the outer peripheral portion or the peripheral portion of the semiconductor die 15.
As shown in fig. 18 (e), the control unit 150 outputs a second pressure P that brings the opening pressure from near atmospheric pressure at time t3 2 First pressure P switched to near vacuum 1 Is a command of (a). In response to the instruction, the driving unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 in a direction to communicate the opening 23 with the vacuum apparatus 140. Then, as shown by an arrow 206 in fig. 8, the air of the opening 23 is sucked into the vacuum apparatus 140, and as shown in (e) in fig. 18, at a time t4, the opening pressure becomes a first pressure P close to the vacuum 1 . Thereby, as indicated by an arrow 203 in fig. 8, the cut sheet 12 located directly above the gap d between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving element 30 is stretched downward. In addition, the peripheral portion of the semiconductor die 15 located directly above the gap d is stretched by the dicing sheet 12, and is thereby bent and deformed downward as indicated by an arrow 204. Thereby, the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the suction head 18. When the adsorption pressure becomes the third pressure P close to the vacuum 3 In this case, since the deviation between the outer peripheral portion of the semiconductor die 15 and the surface 12a of the dicing sheet 12 causes peeling from the surface 12a of the dicing sheet 12 in the peripheral portion of the semiconductor die 15, the peripheral portion of the semiconductor die 15 starts peeling from the surface 12a of the dicing sheet 12 while bending and deforming as indicated by an arrow 204 in fig. 8.
When the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the suction head 18 as shown in fig. 8, air flows into the suction hole 19 of the suction head 18 as shown by an arrow 205 in fig. 8. The flow rate of the air flowing in (air leakage amount) is detected by a flow sensor 106. Thereby making it possible toAs shown in (f) of fig. 18, the amount of air leakage that has turned to decrease and continues to decrease at time t2 starts to increase again at time t 3. Specifically, from time t3 to time t4, the opening pressure is brought from the second pressure P close to the atmospheric pressure 2 Drop to a first pressure P near vacuum 1 Since the semiconductor die 15 is stretched in the downward direction together with the dicing sheet 12 and is deformed in a bending manner, the air leakage amount flowing into the suction hole 19 of the suction head 18 gradually increases from time t3 to time t 4.
Then, as shown in fig. 18 e, the control unit 150 maintains the opening 23 of the stage 20 at the first pressure P close to the vacuum during the period from time t4 to time t5 (time HT 4) 1 . The time HT4 is "the first pressure holding time" of level 4 specified in the parameter table 160 of fig. 19. In the example of fig. 19, HT4 is 130ms. At a first pressure P 1 As shown by arrow 207 in fig. 9, the peripheral portion of the semiconductor die 15 gradually returns to the surface 18a of the suction head 18 due to the vacuum of the suction hole 19 of the suction head 18 and the elasticity of the semiconductor die 15. Thus, at time t4 of fig. 18 (f), the air leakage amount is reduced and continues to be reduced, and when the semiconductor die 15 is vacuum-sucked to the surface 18a of the suction head 18, the air leakage amount becomes substantially zero slightly before time t 5. At this time, the peripheral portion of the semiconductor die 15 is peeled off (initial peeling) from the surface 12a of the dicing sheet 12 located directly above the gap d. Then, as shown in fig. 18 (e), the control unit 150 outputs a first pressure P at which the opening pressure is made to be close to the vacuum at time t5 1 A second pressure P switched to near atmospheric pressure 2 Is a command of (a). In response to the command, the driving unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the pipe 85 opened to the atmosphere with the opening 23. Accordingly, since air flows into the opening 23 as indicated by an arrow 210 shown in fig. 10, the opening pressure is set from the first pressure P close to the vacuum from time t5 to time t6 as shown in (e) of fig. 18 1 Rising to a second pressure P close to atmospheric pressure 2 。
The time t1 to time t6 in fig. 18 are initial peeling. In the case where the peelability of the semiconductor die 15 from the dicing sheet 12 is poor (peeling easiness is low)After the peripheral portion of the semiconductor die 15 is stretched by the dicing sheet 12 as indicated by arrow 204 in fig. 8, a lot of time is taken until the peripheral portion of the semiconductor die 15 returns to the surface 18a of the suction head 18 as indicated by arrow 207 in fig. 9. For such semiconductor die 15, application of maintaining the opening pressure at a first pressure P 1 Is long (time from time t4 to time t5 in fig. 18 (e)) or is at a first pressure P close to vacuum 1 And a second pressure P close to atmospheric pressure 2 The peeling operation (gradation value) with a large number of times of switching the opening pressure is performed to promote the peeling between the peripheral portion of the semiconductor die 15 and the dicing sheet 12.
On the other hand, when the peelability between the semiconductor die 15 and the dicing sheet 12 is good (the peelability is high), the time required for the peripheral portion of the semiconductor die 15 to return to the surface 18a of the suction head 18 is short after the peripheral portion of the semiconductor die 15 is stretched by the dicing sheet 12 as indicated by an arrow 204 in fig. 8, and the time required for the peripheral portion of the semiconductor die 15 to return to the surface 18a of the suction head 18 as indicated by an arrow 207 in fig. 9. For such semiconductor die 15, application of maintaining the opening pressure at a first pressure P 1 Is short or at a first pressure P close to vacuum 1 And a second pressure P close to atmospheric pressure 2 The number of times of peeling operations (gradation values) in which the opening pressure is switched between is small, and the pickup speed is increased. In the example of level 4 in fig. 18, the number of times of switching the opening pressure at the initial peeling was 1 (from the second pressure P 2 Switching to the first pressure P 1 Thereafter from the first pressure P 1 Switching to the second pressure P 2 Counting 1 time). This is the "number of switching times of opening pressure at initial peeling" (FSN 4) of level 4 specified in the parameter table 160 of fig. 19.
In addition, as described above, the time from when the peripheral portion of the semiconductor die 15 is stretched by the dicing sheet 12 until when the peripheral portion of the semiconductor die 15 returns to the surface 18a of the suction head 18 changes according to the ease of peeling of the semiconductor die 15, and therefore, the time change (actual flow rate change) of the air leakage amount detected by the flow sensor 106 also changes. Therefore, as described in detail later, the ease of peeling the semiconductor die 15 from the dicing sheet 12 can be determined based on the actual flow rate change.
The description of the pickup operation is continued. In t6 of FIG. 18, when the opening pressure rises to a second pressure P near the atmospheric pressure 2 In this case, the dicing sheet 12, which is stretched in the downward direction by the vacuum, is returned in the upward direction by the stretching force applied when being fixed to the wafer holder 10, as indicated by an arrow 212 in fig. 10. The cut sheet 12 around the periphery of the opening 23 is slightly lifted from the suction surface 22 by the tensile force.
When the opening pressure becomes the second pressure P close to the atmospheric pressure at time t6 as shown in (e) of fig. 18 2 Thereafter, as shown in fig. 18 (d), the control unit 150 outputs a command for setting the height of the front end surface 38a of the peripheral annular moving element 31 to be the height from the first position (the height from the suction surface 22 is H) 0 Initial position of (2) is lower than height H 1 Is provided for the first position of the first part of the second part. In response to the command, the step surface forming mechanism driving section 400 shown in fig. 1 drives the peripheral annular moving element 31 to move down as indicated by an arrow 214 in fig. 11. The front end surface 38a of the peripheral annular moving element 31 moves to a height H from the first position (initial position) 1 And a second position (lower than the suction surface 22 by a height (H) from the suction surface 22 1 -H 0 ) Is located at the position of (c).
Next, as shown in fig. 18, the control unit 150 holds the state from time t6 to time t 7. At this time, the pressure of the opening 23 becomes the second pressure P close to the atmospheric pressure 2 Therefore, as shown in fig. 11, a gap is left between the back surface 12b of the cut sheet 12 located immediately above the gap d and the front end surface 38a of the peripheral annular moving element 31.
As shown in fig. 18 (e), the control unit 150 outputs a second pressure P at time t7 that brings the opening pressure from near atmospheric pressure 2 First pressure P switched to near vacuum 1 Is a command of (a). In response to the instruction, the driving section 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the opening 23 with the vacuum apparatus 140. Thereby, as indicated by arrow 215 in fig. 12, the air in the opening 23 is sucked into the vacuum device 140, and at time t8, the opening pressure becomes the first pressure P close to the vacuum 1 . When openingSecond pressure P of pressure self-approaching atmospheric pressure 2 Drop to a first pressure P near vacuum 1 In this case, the cut sheet 12 located directly above (facing) the front end surface 38a of the peripheral annular moving element 31 is stretched downward as indicated by an arrow 216 in fig. 12 so that the back surface 12b contacts the front end surface 38 a. Thereby, as indicated by an arrow 217 in fig. 12, a portion of the semiconductor die 15 located directly above the front end surface 38a of the semiconductor die 15 is bent and deformed in a downward direction to be away from the surface 18a of the suction head 18, and as indicated by an arrow 218 in fig. 12, air flows into the suction hole 19 of the suction head 18. The amount of air leakage flowing into the suction hole 19 is detected by the flow sensor 106. As shown in fig. 18 (f), the air leakage amount increases in the period from time t7 to time t8 when the opening pressure decreases. Then, the opening pressure reaches the first pressure P 1 Near time t8 of (a), the semiconductor die 15 in the region opposite to the front end surface 38a returns toward the surface 18a of the suction head 18 as indicated by an arrow 224 shown in fig. 13. As a result, in the vicinity of time t8 in fig. 18 (f), the air leakage amount is reduced, and when the semiconductor die 15 is vacuum-sucked to the surface 18a of the suction head 18 as shown in fig. 13, the air leakage amount becomes substantially zero again. At this time, the region of the semiconductor die 15 facing the front end face 38a is peeled off from the surface 12a of the dicing sheet 12. Further, the time required for the cut sheet 12 to stretch the region of the semiconductor die 15 facing the front end surface 38a as indicated by arrow 217 in fig. 12 until the surface 18a of the suction head 18 returns as indicated by arrow 224 in fig. 13 varies depending on the peelability of the semiconductor die 15 from the cut sheet 12.
Next, as shown in fig. 18 (e), when the time t9 is reached, the control unit 150 outputs a first pressure P that brings the opening pressure from near vacuum 1 Rising to a second pressure P close to atmospheric pressure 2 Is a command of (a). In response to the command, the driving unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to communicate the opening 23 with the pipe 85 that is open to the atmosphere. Thereby, as indicated by arrow 220 in fig. 13, air flows into opening 23, and at time t10, the pressure of opening 23 increases to second pressure P close to the atmospheric pressure 2 . Thereby, as indicated by arrow 223 in fig. 13, the cut sheet 12 immediately above the gap d is separated from the peripheral ring shapeThe front end surface 38a of the moving element 31 is displaced in the upward direction.
At time t10 in fig. 18, the control unit 150 outputs a command to move the front end surface 38b of the intermediate annular moving element 40 to the first position (the height from the suction surface 22 is H) 0 The position of (2) is lower than the height H 1 Is lower by a height H from a first position (initial position) by moving the front end surface 38a of the peripheral annular moving element 31 located at the second position 2 Is lower than H from the suction face 22 2 -H 0 Is located at the position of (c). In response to the command, the step surface forming mechanism driving section 400 shown in fig. 1 drives the intermediate annular moving element 40 to descend as indicated by an arrow 227 in fig. 14, and the peripheral annular moving element 31 to descend as indicated by an arrow 226. The front end surface 38b of the intermediate annular moving element 40 moves to a position from the first position (the self-adsorption surface is higher by a height H 0 The position of (2) is lower than the height H 1 Is lower than H from the suction face 22 (second position of 1 -H 0 The position of (a) and the front end surface 38a of the peripheral annular moving member 31 is moved to be lower by the height H from the first position (initial position) 2 Is lower than H from the suction face 22 2 -H 0 Is located at the position of (c). Thus, as shown in fig. 14, the front end surfaces 38a, 38b, 47 are level difference surfaces having level differences from each other, and are level difference surfaces with respect to the suction surface 22.
Next, as shown in fig. 18, the control unit 150 maintains the state from time t10 to time t 11. Then, the control unit 150 outputs a second pressure P that brings the opening pressure from near the atmospheric pressure at time t11 in fig. 18 (e) 2 First pressure P switched to near vacuum 1 Is specified by (a). In response to the instruction, the driving section 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the opening 23 with the vacuum apparatus 140. Thereby, as indicated by arrow 228 in fig. 15, the air of the opening 23 is sucked into the vacuum apparatus 140, and at time t12, the opening pressure becomes the first pressure P close to the vacuum 1 . Then, as indicated by arrows 229 and 230 in fig. 15, the cut sheet 12 is moved down to the front end surface 38a of the peripheral annular moving element 31 at the third position and is moved down to the intermediate annular positionThe front end surface 38b of the moving element 40 is stretched and displaced in the downward direction. With this, the region of the semiconductor die 15 facing the front end surface 38a and the front end surface 38b is also separated from the surface 18a of the suction head 18 and is bent downward as indicated by an arrow 231 in fig. 15. Then, as shown by an arrow 232 in fig. 15, air flows from between the surface 18a of the suction head 18 and the semiconductor die 15 into the suction hole 19. The amount of air leakage flowing into the suction hole 19 is detected by the flow sensor 106. As shown in fig. 18 (f), the air leakage amount gradually increases from time t11 to time t12 when the opening pressure gradually decreases. Then, the opening pressure reaches the first pressure P 1 Near time t12 of (a), the semiconductor die 15 in the region facing the front end surface 38a and the front end surface 38b returns toward the surface 18a of the suction head 18 as indicated by an arrow 244 shown in fig. 16. As a result, in the vicinity of time t12 of (f) in fig. 18, the air leakage amount is reduced, and when the semiconductor die 15 is vacuum-sucked to the surface 18a of the suction head 18 as shown in fig. 16, the air leakage amount becomes substantially zero. Further, the time until returning toward the surface 18a of the suction head 18 varies depending on the peelability of the semiconductor die 15 from the dicing sheet 12.
Next, as shown in fig. 18 (e), the control unit 150 outputs a first pressure P that brings the opening pressure from near vacuum at time t13 1 A second pressure P switched to near atmospheric pressure 2 Is a command of (a). In response to the command, the driving unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to communicate the opening 23 with the pipe 85 that is open to the atmosphere. Then, as indicated by an arrow 241 in fig. 16, air flows into the opening 23, and the opening pressure rises, so that the cut sheet 12 is displaced upward as indicated by an arrow 243 in fig. 16. As shown in fig. 18 (e), at time t14, the opening pressure becomes the second pressure P close to the atmospheric pressure 2 . In this state, as shown in fig. 16, the semiconductor die 15 in the region corresponding to the front end surface 47 of the columnar moving element 45 is attached to the dicing sheet 12, but most of the region of the semiconductor die 15 is peeled from the dicing sheet 12.
Next, at time t14 in fig. 18, the control unit 150 outputs a command to make a column shapeThe front end face 47 of the moving element 45 moves to a first position (the height from the suction face 22 is H 0 The position of (2) is lower than the height H 1 The front end surface 38b of the intermediate annular moving element 40 located at the second position is moved to be lower by the height H from the first position (initial position) 2 Is lower than H from the suction face 22 2 -H 0 Is located at the position of (c). In response to the instruction, the step surface forming mechanism driving section 400 shown in fig. 1 drives the columnar moving element 45 to descend as indicated by arrow 260 in fig. 17, and the intermediate annular moving element 40 to descend as indicated by arrow 246. The front end face 47 of the columnar moving element 45 moves to a position from the first position (the self-absorption surface is higher than the height H 0 The position of (2) is lower than the height H 1 And the front end surface 38b of the intermediate annular moving member 40 is moved to be lower by the height H from the first position (initial position) 2 Is provided in the first position of (a). Thereby, as shown in fig. 17, the semiconductor die 15 is peeled from the dicing sheet 12.
The control unit 150 outputs a command to raise the suction head 18 at time t15 in fig. 18. In response to the command, the tip driving unit 130 shown in fig. 1 drives the motor to raise the tip 18 as shown in fig. 17. When the suction head 18 is raised, the semiconductor die 15 is picked up in a state of being suctioned by the suction head 18.
After the semiconductor die 15 is picked up, the control unit 150 returns the front end surfaces 38a, 38b, 47 of the moving elements 31, 40, 45 to the first position at time t16, and the suction pressure of the suction surface 22 of the stage 20 is changed from the third pressure P close to the vacuum by the suction pressure switching mechanism 90 3 Fourth pressure P switched to near atmospheric pressure 4 . So far, the pickup ends.
The above-described time t6 to time t16 in fig. 18 are the main stripping. In the main peeling, the front end surface is sequentially moved from the first position to the second position by the moving element 30 from the outer moving element 30 to the inner moving element 30, and the front end surface is pressed by the first pressure P 1 And a second pressure P 2 The opening pressure is switched therebetween, whereby the region of the semiconductor die 15 on the inner side than the peripheral portion is peeled off from the surface 12a of the dicing sheet 12. Furthermore, in the aboveIn the described main stripping, at a first pressure P 1 And a second pressure P 2 The opening pressure is switched between them, but the movement elements 30 may be moved in sequence while maintaining the opening pressure at a first pressure close to vacuum.
Here, the peeling parameters of the peeling operation of fig. 18 described above were checked. The peeling operation of fig. 18 described above is performed by applying the parameter values of the respective peeling parameters specified in level 4 of the parameter table 160 of fig. 19. Specifically, the following parameter values of the peeling parameters are applied. "number of times of switching of opening pressure at initial peeling (from second pressure P 2 Switching to the first pressure P 1 Thereafter from the first pressure P 1 Switching to the second pressure P 2 The count is 1 time, the same applies hereinafter), fsn4=1 time. The "number of times of switching of the opening pressure at the time of the main peeling" is ssn4=2 times. Maintaining the opening pressure at a first pressure P 1 The time of (i.e. "first pressure hold time" is set to HT4 = 130ms. The "number of moving elements that descend simultaneously" is set to dn4=0. The "inter-moving element descent time interval" when the distal end surfaces of the moving elements 30 are sequentially descended from the first position to the second position is set to it4=240 ms. The "suction head standby time" which is the time from when the suction head 18 lands on the semiconductor die 15 to when the semiconductor die 15 starts to be lifted up is set to wt4=710 ms. Also, the "pickup time" is pt4=820 ms.
< parameter Table >
Here, the parameter table 160 of fig. 19 is described in more detail. The parameter values of the respective peeling parameters in the parameter table 160 have the following tendency in accordance with the change in the gradation value. As shown in fig. 19, from level 1 to level 8, "the number of switching times of the opening pressure at the initial peeling" increases in number. However, this does not mean that the number of times of switching is necessarily increased every time the gradation value is changed, and the number of times of switching may be the same among a plurality of adjacent gradation values. The same is true for other stripping parameters, which does not mean that the parameter value changes every time the grade value changes, and there are cases where the parameter value is the same among a plurality of adjacent grade values. From level 1 to level 8, the number of "the number of switching times of the opening pressure at the time of the main peeling" increases. In addition, from level 1 to level 8, the "holding time of the first pressure" is prolonged for a time. From level 1 to level 8, the "drop time interval between moving elements" extends the time interval. Further, the "tip standby time" is prolonged from level 1 to level 8. The "pick-up time" changes every time the level value changes, and becomes longer from level 1 to level 8. The "pickup time" is similar to the "tip standby time", but includes not only the tip standby time, but also the time from the time when the tip 18 is lowered from a predetermined position to land on the semiconductor die 15 and the time from the time when the semiconductor die 15 starts to be lifted up to the predetermined position. Further, the parameter table 160 of fig. 19 may also be referred to as a "condition table", and the peeling parameter may also be referred to as a "pick-up parameter". The specific parameter values shown in fig. 19 are only examples, and other values are also possible.
Here, as an example of the peeling operation other than the peeling operation of the above-described level 4, the peeling operations of the level 1 and the level 8 will be described. First, a peeling operation of level 8 will be described. The rank 8 is a rank value that should establish correspondence with the semiconductor die 15 that is very difficult to peel. Fig. 20 is a diagram showing the height of the tip 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, and the opening pressure of the opening 23 at the time of the stage 8 stripping operation. The following is apparent by comparing the peeling operation of level 8 in fig. 20 with the peeling operation of level 4 in fig. 18.
In the peeling operation of level 8 in fig. 20, "the number of times of switching of the opening pressure at the initial peeling" is increased to 4 times (FSN 8). Thus, even when the periphery of the semiconductor die 15 is hard to peel from the dicing sheet 12, the periphery of the semiconductor die 15 can be sufficiently peeled from the dicing sheet 12. The opening pressure is switched a plurality of times, and thus an impression (image) of the dicing sheet 12 attached around the semiconductor die 15 is shaken off, and the dicing sheet can be peeled off reliably although it takes time. In fig. 20, the "first pressure holding time" (HT 8) at the time of initial peeling is set to 150ms (see fig. 19, and the detailed parameter values are referred to as the above-described figures). Thereby, the peeling of the semiconductor die 15 from the dicing sheet 12 can be promoted naturally. In the example of fig. 19, the "first pressure holding time" is not greatly different between the level 4 and the level 8, but a larger difference is also conceivable.
In the peeling operation of level 8 in fig. 20, "the number of times of switching the opening pressure at the time of main peeling" is increased to 4 times (SSN 8). Thus, even when the semiconductor die 15 is less likely to be peeled from the dicing sheet 12 in the region on the inner side than the periphery, the dicing sheet 12 attached to the semiconductor die 15 can be reliably peeled off so as to be shaken off. In fig. 20, the "first pressure holding time" (HT 8) at the time of the main peeling was set to 150ms and extended. This can promote the semiconductor die 15 to peel off naturally from the dicing sheet 12 in the region inside the periphery. In the parameter table 160 shown in fig. 19, the "first pressure holding time" (HT 8) is set to be the same at the time of initial peeling and at the time of main peeling, but the "first pressure holding time" may be set to be different at the time of initial peeling and at the time of main peeling, respectively, in the parameter table 160. In addition, as shown in fig. 20, since the opening pressure is switched a plurality of times at the time of initial peeling or main peeling, there are a plurality of times held at the first pressure P 1 In the parameter table 160, a plurality of "first pressure holding times" may be defined, and the parameter values may be different from each other. For example, a plurality of "first pressure holding times" are arranged in the order of application in the peeling operation and are specified in the parameter table 160.
In the peeling operation of level 8 in fig. 20, the "time interval for lowering between moving elements" (IT 8) was set to 450ms and extended. If the time from lowering the front end surface 38a of the peripheral annular moving element 31 from the first position to the second position to lowering the front end surface 38b of the intermediate annular moving element 40 from the first position to the second position is prolonged, the peeling of the semiconductor die 15 from the dicing sheet 12 can be promoted naturally in the region facing the front end surface 38a of the peripheral annular moving element 31. Similarly, if the time from lowering the front end surface 38b of the intermediate annular moving element 40 from the first position to the second position to lowering the front end surface 47 of the columnar moving element 45 from the first position to the second position is prolonged, the peeling of the semiconductor die 15 from the dicing sheet 12 can be promoted naturally in the region facing the front end surface 38b of the intermediate annular moving element 40. In this case, the lowering time intervals between the peripheral annular moving element 31 and the intermediate annular moving element 40 and the lowering time intervals between the intermediate annular moving element 40 and the columnar moving element 45 may be different, and in this case, the lowering time intervals may be defined in the parameter table 160. As shown in fig. 2, the number of intermediate annular moving elements 40 and 41 may be two or more, and in this case, the intermediate annular moving elements 40 on the outer peripheral side and 41 on the inner peripheral side are sequentially lowered during the peeling operation. In the case where the number of intermediate annular moving elements 40 and 41 is two or more as described above, the lowering time interval between the intermediate annular moving element 40 and the other intermediate annular moving element 41 may be defined in the parameter table 160. For example, the time from the time point when the pickup operation starts (time t1 in fig. 20) to the time point when the peripheral ring-shaped moving element 31 (the first-descending moving element 30) descends from the first position to the second position may be defined in the parameter table 160.
In the stripping operation of level 8 in fig. 20, the "tip standby time" (WT 8) was set to 1590ms and extended. In fig. 20, the "pickup time" (PT 8) becomes 1700ms and becomes longer.
Next, the peeling operation of level 1 will be described. The rank 1 is a rank value with which a correspondence should be established with the semiconductor die 15 that is very easily peeled off. Fig. 21 is a diagram showing the height of the tip 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, and the opening pressure of the opening 23 at the time of the level 1 stripping operation. The following is apparent by comparing the peeling operation of level 1 in fig. 21 with the peeling operation of level 4 in fig. 18.
In the peeling operation of level 1 in fig. 21, the "holding time of the first pressure" (HT 1) at the time of initial peeling was set to 100ms and shortened. In the case where the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the "holding time of the first pressure" is shortened, the periphery of the semiconductor die 15 is sufficiently peeled from the dicing sheet 12. By shortening the "holding time of the first pressure" in this manner, the time required for the peeling operation can be shortened.
In the peeling operation of level 1 in fig. 21, the "number of times of switching of the opening pressure at the time of main peeling" is reduced to 1 (SSN 1). When the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the "number of times of switching of the opening pressure at the time of main peeling" is 1, the area of the semiconductor die 15 on the inner side than the periphery is sufficiently peeled from the dicing sheet 12. In fig. 21, the front end surfaces 38a, 38b, and 47 of the 3 moving elements 30 (the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45) are simultaneously lowered from the first position to the second position or lower at time ts1, and the "number of simultaneously lowered moving elements" is increased to 3 (DN 1). When the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the plurality of moving elements 30 are simultaneously lowered, the area of the semiconductor die 15 on the inner side than the periphery is immediately peeled from the dicing sheet 12. When the peripheral annular moving element 31 and the intermediate annular moving element 40 are simultaneously lowered and the columnar moving element 45 is lowered after a predetermined time, the "number of simultaneously lowered moving elements" becomes 2. In the parameter table 160 of fig. 19, two peeling parameters of "the number of moving elements that descend at the same time" and "the descent time interval between moving elements" are specified, but instead of these, the "descent time interval between the peripheral annular moving element 31 and the intermediate annular moving element 40", "the descent time interval between the intermediate annular moving element 40 and the columnar moving element 45", "the descent time interval between the intermediate annular moving element 40 and the other intermediate annular moving element 41" may be specified. In this case, in order to simultaneously lower the plurality of moving elements 30, one or two or more of these lowering time intervals may be set to 0.
In the stripping operation of level 1 in fig. 21, the "tip standby time" (WT 1) was set to 460ms and shortened. In fig. 21, the "pickup time" (PT 1) is 570ms and becomes shorter.
As described above, the parameter values of the respective peeling parameters are made different according to the gradation values, that is, the peeling operation (pickup operation) is made different. By performing the peeling operation by associating the rank value close to rank 8 with the semiconductor die 15 in the position where peeling is difficult in one wafer, breakage of the semiconductor die 15 at the time of pickup or pickup error can be suppressed. On the other hand, the semiconductor die 15 in the position easily peeled off from the wafer can be picked up in a short time by performing the peeling operation in association with the rank value close to rank 1. Further, the plurality of gradation values may be referred to as a value indicating the length of time required for pickup. The parameter values of the respective peeling parameters may be referred to as "pickup conditions", and the parameter values of the same kind of peeling parameters (for example, "the number of times of switching of the opening pressure at the time of initial peeling") of class 1 to class 8 are "a plurality of pickup conditions". In addition, the kind of the peeling parameter shown in fig. 19 may be defined as "kind of pickup condition".
< table of class >
Next, the level table 159 is described in detail. Fig. 22 is an explanatory diagram of identification numbers (die identification numbers, individual information) of the semiconductor dies 15 of one wafer, and fig. 23 is a diagram showing an example of the rank table 159. As shown in fig. 22, the identification numbers of the X-direction position (X-coordinate) and the Y-direction position (Y-coordinate) of each semiconductor die 15 including one wafer 11 are associated with each semiconductor die 15. For example, the semiconductor die 15 located at the leftmost upper part of the wafer 11 has a correspondence with the identification numbers "1-9" because the X-direction position is "1" and the Y-direction position is "9", and similarly, the semiconductor die 15 located at the right of the semiconductor die 15 has a correspondence with the identification numbers "1-10" because the X-direction position is "1" and the Y-direction position is "10".
As shown in fig. 23, the rank table 159 associates the identification numbers (die identification numbers, individual information) of the respective semiconductor dies with rank values. That is, the rank table 159 associates each semiconductor die in one wafer with a rank value of an identifier of a parameter value (a plurality of pickup conditions) as a peeling parameter. The peeling operation corresponding to the level value is associated with each semiconductor die 15 of one wafer by the level table 159 and the parameter table 160. From the level table 159 and the parameter table 160, correspondence information is determined in which one pickup condition (parameter value) out of a plurality of pickup conditions (parameter values of level 1 to level 8) of various peeling parameters and individual information (identification information) of the semiconductor die are associated.
Fig. 24 is a diagram in which a gradation value or a shade corresponding to a gradation value corresponding to each semiconductor die 15 is added to each semiconductor die 15 of one wafer in accordance with the gradation table 159 of fig. 23. As described above, the peeling easiness (peelability) may gradually increase from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in one wafer. In this case, as shown in fig. 24, the level value of the correspondence relationship is made lower from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in the wafer (the peeling operation is simplified so that the time required for the peeling operation is made shorter). In fig. 24, the level 7 and the outermost semiconductor die 15e (the semiconductor die with the left high diagonal line added thereto) are associated with each other, the level 6 and the inner peripheral side semiconductor die 15d (the semiconductor die with the right high diagonal line added thereto) of the semiconductor die 15e are associated with each other, and the level 5 and the inner peripheral side semiconductor die 15c (the dark gray semiconductor die added thereto) of the semiconductor die 15d, the level 4 and the inner peripheral side semiconductor die 15b (the light gray semiconductor die added thereto) of the semiconductor die 15c, and the level 3 and the semiconductor die 15a (the white semiconductor die added thereto) near the center are associated with each other, respectively. Note that, in fig. 25 to 27 and fig. 30 to 35 described below, the same shading or shading as in fig. 24 added to each semiconductor die 15 or each semiconductor image (described later) means that the same gradation value as that of fig. 24 is associated with the same gradation value. As shown in fig. 24, by applying a peeling operation (high level value) for sufficiently promoting peeling to the semiconductor die 15 at a position where peeling is difficult, damage or pickup error of the semiconductor die at the time of pickup can be suppressed, and by applying a simple peeling operation (low level value) to the semiconductor die 15 at a position where peeling is easy, pickup can be performed in a short time. Since the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 among the plurality of wafers shows the same tendency, the semiconductor die 15 of the plurality of wafers are successively picked up using the rank table 159 as shown in fig. 23 and 24.
< setting display Screen >
Next, a description will be given of a setting display screen 460 for an operator or the like to generate or edit (update) the level table 159. Fig. 25 to 27 are diagrams showing an example of the setting display screen 460. The control unit 150 executes the setting display program 156 stored in the storage unit 152 to display the setting display screen 460 on the display unit 450 (display), and reads, generates, and updates the gradation table 159. The control unit 150 functions as a display control unit, and thereby displays a setting display screen 460 on the display unit 450. As will be described later, the instruction to automatically acquire the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 of the wafer is received by executing the setting display program 156. As shown in fig. 25, the setting display screen 460 includes: a map image 480, which simulates each semiconductor die of a wafer, and includes a plurality of semiconductor die images 482; an operation button group 464 including various buttons 468 for operation; and a class value button group 462 including buttons 466 of "class 1" through "class 8".
When the rank value has been associated with each semiconductor die 15 as shown in fig. 23 and 24, that is, when the rank table 159 has been generated, the operator or the like can display the correspondence relationship defined by the rank table 159 in the map image 480 of the setting display screen 460. Specifically, the operator or the like moves the pointer 478 on the setting display screen 460 to the position of the "read" button 468 by means of a mouse (input unit 410) as shown in fig. 25, and clicks (selects) the button. Thus, the correspondence relationship defined in the rank table 159 is read out, and the correspondence relationship is displayed on the map image 480. Specifically, in the mapped image 480, a color corresponding to the gradation value corresponding to each semiconductor die 15 is added to each semiconductor die image 482 corresponding to each semiconductor die 15. Fig. 25 shows a case where the rank table 159 having the correspondence relation between each semiconductor die 15 and the rank value shown in fig. 23 and 24 has been read. By adding a color corresponding to the gradation value to each semiconductor die image 482 in this manner, an operator or the like can easily grasp which gradation value corresponds to the semiconductor die at each position. Although the color corresponding to the gradation value is added to each semiconductor die image 482 here, at least one of the color, pattern, letter, number, and symbol corresponding to the gradation value may be added to each semiconductor die image 482 of the mapped image 480.
The operator or the like can edit the level table 159 read out from the map image 480 of the setting display screen 460. In this case, description will be made after explaining a method of newly generating the rank table 159. In the present embodiment, the mouse is used for movement of the pointer 478 and selection of the button, but a joystick or the like may be used.
Fig. 26 is a diagram showing an example of the setting display screen 460 when the level table 159 is newly generated. The operator or the like moves the index 478 to the "newly added" button 468 and clicks the button 468, whereby the setting display screen 460 becomes the newly added screen of the level table 159. At this time, a temporary rank table 159 is created in which a predetermined rank value is associated with all semiconductor dies 15 of one wafer, and a color corresponding to the predetermined rank value is added to each semiconductor die image 482 of the mapped image 480. In fig. 26, the preset gradation value is gradation 3, and a color (white) corresponding to gradation 3 is added to each semiconductor die image 482 (e.g., semiconductor die image 482a in fig. 25). From this state, the operator or the like associates the desired rank value with each semiconductor die image 482, and thereby associates the rank value with the semiconductor die 15 corresponding to each semiconductor die image 482.
Specifically, first, as shown in fig. 26, the index 478 is moved to a button 466 of a desired level value (level 5 in fig. 26), and the level value is selected by clicking the button 466. Then, as shown in fig. 27, index 478 is moved to semiconductor die image 482b to be associated with the selected rank value, and semiconductor die image 482b is selected. Thus, the selected rank value is associated with the semiconductor die corresponding to the selected semiconductor die image 482b. In addition, a color corresponding to the selected gradation value is added to semiconductor die image 482b. Fig. 27 shows a state in which three semiconductor die images 482b are selected by clicking, and a color corresponding to the selected level 5 is added to these semiconductor die images 482b. The operator or the like repeatedly selects the gradation value and selects the semiconductor die image (semiconductor die) corresponding to the selected gradation value in this manner, thereby creating or editing the gradation table 159. The control unit 150 functions as a generating unit, and accepts selection of the gradation value and selection of the semiconductor die image (semiconductor die).
Then, when the creation or editing of the level table 159 is completed, the index 478 is moved to the button 468 of "overwrite storage", and the button 468 is clicked (selected), whereby the creation (generation) of the level table 159 is ended. When the "overwrite storage" button 468 is clicked, the control unit 150 functions as generating means, and generates the rank table 159. When there are a plurality of the level tables 159, the following modes can be considered for identifying each level table 159: the file name is added to the level table 159 and stored in the storage unit 152, and the file name is designated at the time of reading and the level table 159 is read from the storage unit 152. In the case of the above-described form, the "new file to save" button 468 is clicked by the index 478, and the file name is added from the keyboard or the like of the input unit 410, and the rank table 159 is stored in the storage unit 152. In this case, when the button 468 for "new gear is selected, the control unit 150 functions as generating means, and generates the rank table 159. When the "read" button 468 is clicked by the index 478, the file name of the level table 159 to be read is specified from among the plurality of level tables 159, and the desired level table 159 is read on the setting display screen 460.
As shown in fig. 25, when the gradation table 159 is read out from the map image 480 of the setting display screen 460 and then edited (updated) in the gradation table 159, the editing is performed by the same method as in the case of the new addition. That is, in fig. 25, after a button 466 of a desired level value is clicked (selected) by an index 478, a semiconductor die image 482 (semiconductor die) to be changed to the selected level value is clicked by the index 478. Thus, the selected gradation value is associated with semiconductor die 15 corresponding to the selected semiconductor die image 482, and a color is added to semiconductor die image 482 according to the gradation value.
The operator starts picking up the semiconductor die 15 by pressing a button for performing picking up, not shown, in a state where the gradation table 159 is read out on the setting display screen 460, that is, in a state where a color corresponding to the gradation value is added to each semiconductor die image 482 of the mapped image 480. The button for performing the pickup may be a button displayed on the screen by clicking the mouse of the input unit 410, or a physically existing button pressed by a hand or finger of an operator or the like. By pressing a button for performing pickup, the control section 150 executes the control program 155 stored in the storage section 152 to perform pickup of the semiconductor die 15. At this time, the peeling operation is performed for each semiconductor die 15 of each wafer in accordance with the gradation table 159 read out in the map image 480 of the setting display screen 460.
< acquisition of peelability of semiconductor die in one wafer >
Next, the acquisition of the peelability of each semiconductor die 15 of one wafer will be described. By grasping the peelability (easy peelability or difficult peelability) of each semiconductor die 15 corresponding to the position of each semiconductor die 15 of the wafer, an operator or the like can make a more accurate gradation value correspond to each semiconductor die 15. Therefore, the semiconductor die pick-up system 500 of the present embodiment can automatically acquire peelability of each semiconductor die corresponding to the position of each semiconductor die of the wafer. The automatic acquisition of the peelability of each semiconductor die 15 will be described in detail below.
< method for detecting peelability >
First, a method of detecting peelability of the semiconductor die 15 from the dicing sheet 12 by the semiconductor die pickup system 500 will be described. The peelability of the semiconductor die 15 from the dicing sheet 12 can be detected from the time variation (actual flow variation) of the suction air flow rate of the suction head 18 detected by the flow sensor 106.
Fig. 28 is a graph showing the time-varying changes in the opening pressure at the initial peeling and the air leakage amount (suction air flow rate) of the suction head 18 detected by the flow sensor 106, and the meaning of each time t1, t2, t3, t4 is the same as that shown in fig. 18. The solid line 157 in the graph of the air leakage amount in fig. 28 is a time-dependent required flow rate change 157 of the air leakage amount in the case where the peeling of the semiconductor die 15 from the dicing sheet 12 is good (in the case where the peeling easiness is very high), and the flow rate change 157 is expected to be stored in the storage portion 152 in advance. Specifically, the expected flow rate change 157 stored in the storage unit 152 may be a set of a plurality of suction air flow rates acquired at a predetermined sampling period, and may be a suction air flow rate associated with a plurality of discrete times t. The one-dot chain line 158a and the two-dot chain line 158b in the graph of the air leakage amount of fig. 28 are examples of the actual flow rate change 158, which is a time change in the air leakage amount detected when the semiconductor die 15 is actually picked up from the dicing sheet 12. The actual flow variation 158 is saved to the memory section 152 each time the semiconductor die 15 is picked up. Specifically, the actual flow rate change 158 stored in the storage unit 152 may be a form that can be compared with the expected flow rate change 157, and for example, the actual flow rate change 158 may be a set of a plurality of suction air flow rates acquired at a predetermined sampling period and a suction air flow rate corresponding to a plurality of discrete times t, as in the expected flow rate change 157. The actual flow rate change may be referred to as "actual flow rate information", and the expected flow rate change may be referred to as "expected flow rate information".
In the case where the peeling of the semiconductor die 15 from the dicing sheet 12 is good, when at the timingt3 opening pressure to a first pressure P near vacuum 1 When the change starts, the periphery of the semiconductor die 15 is separated from the surface 18a of the suction head 18 (see fig. 8), but the periphery of the semiconductor die 15 immediately returns to the surface 18a of the suction head 18 (see fig. 9). Therefore, as in the expected flow rate change 157 of fig. 28, the air leakage amount increases from time t3, but immediately changes to decrease (changes to decrease at time tr_exp). The increased air leakage amount is also small in the expected flow rate change 157.
On the other hand, in the case where the peeling property of the semiconductor die 15 from the dicing sheet 12 is poor (in the case where the peeling easiness is low), the opening pressure is brought to the first pressure P close to the vacuum at time t3 1 At the beginning of the change, the periphery of the semiconductor die 15 is moved away from the surface 18a of the suction head 18, and after a certain amount of time has elapsed, the periphery of the semiconductor die 15 returns to the surface 18a of the suction head 18. Therefore, as in the actual flow rate change 158a of fig. 28, the air leakage amount increases from time t3, and after continuing to increase, changes to decrease at time tr_rel later than time tr_exp. In addition, in the actual flow rate change 158a, the increased air leakage amount is large.
In addition, when the peelability of the semiconductor die 15 from the dicing sheet 12 is extremely poor (when the peelability is extremely low), the periphery of the semiconductor die 15 does not return to the surface 18a of the suction head 18 even when a certain amount of time has elapsed after the periphery of the semiconductor die 15 has been separated from the surface 18a of the suction head 18. Therefore, as in the actual flow rate change 158b of fig. 28, even when the first pressure P near vacuum is reached from the opening pressure 1 The air leakage amount is also kept in a large state at the time tc_end when the predetermined time elapses from the time t 4.
As such, the worse the peelability of the semiconductor die 15 from the dicing sheet 12, the more the actual flow rate variation 158 deviates from the expected flow rate variation 157. Therefore, the actual flow rate change 158 is compared with the expected flow rate change 157, and the more similar the actual flow rate change 158 is to the expected flow rate change 157, the better the peelability (the higher the peeling easiness) is determined. Alternatively, the stronger the correlation between the actual flow rate change 158 and the expected flow rate change 157, the better the peelability (the higher the peeling easiness) is determined. In the present embodiment, the actual flow rate change 158 is compared with the expected flow rate change 157, and a correlation value of these values is obtained. The correlation value is 0 to 1.0, and when the actual flow rate change 158 and the expected flow rate change 157 completely match, it is set to 1.0, and the closer to 1.0 from 0, the higher the peeling easiness is determined. In the present embodiment, the range of the correlation value is set to 0 to 1.0, but it is needless to say that the correlation value may be other values.
The period for comparing the actual flow rate change 158 with the expected flow rate change 157 is, for example, set to time t1 of fig. 28 (time when the suction of air from the surface 18a of the suction head 18 starts) as a part of the initial peeling period
Time) to time tc_end (from the first opening pressure to the first pressure P 1 Time t4 of (a) after a predetermined time has elapsed). Alternatively, the period for comparison may be at time t3 (the opening pressure starts to be toward the first pressure P) as a part of the initial peeling period 1 Time of change) to tc_end. The period for comparison may be another period.
As the peelability of the semiconductor die 15 from the dicing sheet 12, a value other than the correlation value between the actual flow rate change 158 and the expected flow rate change 157 may be obtained. For example, it can be determined that the peeling property is better (the peeling easiness is higher) as the difference between the value of the expected flow rate change 157 at the time tc_end and the value of the actual flow rate change 158 at the time is smaller in fig. 28. For example, the smaller the difference between the time tr_exp, which is the time point when the air leakage flow rate in the expected flow rate change 157 changes from increasing to decreasing, and the time tr_rel, which is the time point when the air leakage flow rate in the actual flow rate change 158 changes from increasing to decreasing, the higher the peeling easiness can be determined. For example, it may be determined that the easier the separation becomes, the smaller the difference between the maximum value of the air leakage flow rate of the expected flow rate change 157 detected at time t3 and after the time and the maximum value of the air leakage flow rate of the actual flow rate change 158 detected at the time and after the time becomes.
In addition, it is also considered to detect the peelability of the semiconductor die 15 from the dicing sheet 12 without using the expected flow rate change 157. For example, the smaller the value of the actual flow rate change 158 at the time tc_end in fig. 28, the better the peelability (the higher the peeling easiness) can be determined. Further, the correlation value obtained based on the actual flow rate variation 158 or an index value representing the peelability of the semiconductor die 15 from the dicing sheet 12 instead of the correlation value may be referred to as an "evaluation value".
< display of peelability on setting display screen >
Next, a method of displaying the peelability of the semiconductor die 15 from the dicing sheet 12 detected as described above on the setting display screen 460 will be described. When an operator or the like wants to grasp the peelability of each semiconductor die 15 at the position of each semiconductor die 15 of one wafer, as shown in fig. 30, the operator clicks the "auto acquire" button 468 by using the index 478. Thus, the control unit 150 executes the control program 155 of the storage unit 152, and picks up each semiconductor die 15 of one wafer with a peeling operation (pick-up operation) of a predetermined level value. At this time, the control unit 150 functions as a generating unit, acquires the actual flow rate change 158 every time the semiconductor die 15 is picked up, obtains a correlation value between the actual flow rate change 158 and the expected flow rate change 157, and stores the actual flow rate change 158 and the correlation value in the storage unit 152.
Then, each time the semiconductor die 15 is picked up, the control section 150 (generating unit) compares the correlation value with the threshold TH1 and threshold TH2 of each class value of the threshold table 161 shown in fig. 29. Fig. 29 is an example of the threshold value table 161, and the threshold value table 161 is a table stored in the storage unit 152 in advance and is a table for determining which class value should be applied to the semiconductor die 15 based on the correlation value. In the threshold table 161, the ranges of the respective gradation values are set by the lower threshold TH1 and the upper threshold TH2, and the lower the gradation value is, the larger the thresholds TH1 and TH2 are set. For example, the range of level 4 is 0.81 (lower threshold TH 1) to 0.85 (upper threshold TH 2), the range of level 1 is 0.96 or more (lower threshold TH 1), and the range of level 8 is 0.65 or less (upper threshold TH 2). The control unit 150 (generating means) searches for which range of rank values the obtained correlation value belongs to, and obtains the rank value to which the correlation value belongs. For example, if the correlation value obtained is 0.78, a rank 5 (range: 0.76 to 0.80) is obtained. In this way, the control unit 150 acquires the class value to which the correlation value belongs from the threshold value table 161 every time each semiconductor die 15 of one wafer is picked up. Then, the control unit 150 associates the rank value with the semiconductor die 15 (die identification number) for which the correlation value is obtained. That is, the control unit 150 (generating means) gradually creates the rank table 159. Based on the gradation table 159 created gradually, the control unit 150 adds a color corresponding to the gradation value to each semiconductor die image 482 of the mapped image 480 as shown in fig. 30.
In this way, the magnitude of the correlation value (peeling easiness) of each semiconductor die 15 is expressed in the map image 480 in stages as a gradation value. By observing the mapped image 480 shown in fig. 30, the operator or the like can easily grasp which position the semiconductor die has the degree of peeling easiness. Further, since the level table 159 can be created by merely clicking the "auto acquire" button 468, the level table 159 can be directly applied when picking up each semiconductor die of a plurality of wafers after that. Further, the operator or the like can edit the rank table 159 in which the rank values and the semiconductor dies 15 are automatically associated with each other as shown in fig. 30. That is, in the setting display screen 460 of fig. 30, as in the case of the above-described edit level table 159, after the button 466 of a desired level value is selected by the index 478, the semiconductor die image 482 of the map image 480 whose level value is to be changed may be selected by the index 478. Although the color corresponding to the gradation value is added to each semiconductor die image 482 of the mapped image 480, at least one of the color, pattern, character, number, and mark may be added to each semiconductor die image 482, which changes more minutely according to the magnitude of the correlation value (ease of separation).
Further, the semiconductor die pickup system 500 of the present embodiment has a structure in which an operator or the like can grasp the peelability of each semiconductor die 15 of one wafer in detail. As shown in fig. 31, when index 478 is moved to predetermined semiconductor die image 482c of mapped image 480, air bubble 486 appears, and a waveform and a correlation value of an actual flow rate change of semiconductor die 15 corresponding to semiconductor die image 482c where index 478 is located are displayed in air bubble 486. In the air bubbles 486 shown in fig. 31, not only the actual flow rate change but also the expected flow rate change are shown by solid lines. In this way, since the actual flow rate change and the correlation value of each semiconductor die 15 are displayed on the setting display screen 460, the operator or the like can know the peelability of each semiconductor die 15 in detail. In the mapped image 480, a correlation value of each semiconductor die 15 corresponding to each semiconductor die image 482 may be added to each semiconductor die image 482. Alternatively, the correlation value of the semiconductor die 15 corresponding to the specific one or more semiconductor die images 482 may be displayed at a predetermined position on the setting display screen 460.
< Effect >
The semiconductor die pickup system 500 described above stores, in the storage unit 152, correspondence information (the rank table 159 and the parameter table 160) in which each semiconductor die 15 in one wafer is associated with one pickup condition (the parameter value) among a plurality of pickup conditions (the parameter values of rank 1 to rank 8) among various peeling parameters. When picking up each semiconductor die 15 of one wafer, the semiconductor die 15 is peeled off from the dicing sheet 12 and picked up in accordance with the peeling operation in which the correspondence relation with each semiconductor die 15 is established with reference to the correspondence information. Therefore, the pick-up can be performed by applying the peeling operation suitable for each semiconductor die 15 in one wafer. Further, according to the semiconductor die pickup system 500 described above, the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 of one wafer can be grasped.
< others >
In the embodiment described above, the setting display screen 460 is a screen for creating or updating the level table 159. However, the setting display screen 460 may set each parameter value of the parameter table 160 (condition table). For example, as shown in fig. 32, a window 490 for setting parameter values is displayed on the setting display screen 460 so that parameter values can be set. Specifically, first, the button 466 of the gradation value to be set for the parameter value is selected (clicked) by the index 478, and then the button 470 of "detailed setting" is clicked by the index 478. Thus, as shown in fig. 32, the window 490 for setting the parameter value of the peeling parameter of the selected gradation value appears. Then, the character box 492 of the parameter value to be changed or reset in the window 490 is selected by the pointer 478, and the parameter value is inputted from the keyboard of the input unit 410. Then, when the input of all parameter values is completed, the "store" button 472 in window 490 is clicked with index 478. Thereby changing or resetting the parameter value of the peeling parameter of the selected gradation value. The reception of the parameter values and the update or generation of the parameter table 160 by clicking the "store" button 472 are performed by the control unit 150 functioning as generation means. In this way, if the parameter values of the parameter table 160 can be changed and set on the setting display screen 460, the parameter values of the peeling parameters of the respective gradation values can be very easily adjusted.
In the above-described embodiment, the case where the peeling easiness (peeling easiness) gradually increases from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in the wafer is described as an example. However, in addition to this, there are various patterns of peelability of the respective semiconductor dies 15 corresponding to the positions of the respective semiconductor dies 15 in the wafer. A film called a die attach film (die attachment film, DAF) is sometimes attached to the back surface of the semiconductor die 15. After being picked up together with the semiconductor die 15 in a state of being attached to the back surface of the semiconductor die 15, the DAF functions as an adhesive between the semiconductor die 15 and the substrate when the semiconductor die 15 is bonded to the substrate. In a state where the semiconductor die 15 is attached to the dicing sheet 12, DAF exists between the semiconductor die 15 and the dicing sheet 12. In order to improve the peelability of the DAF attached to the back surface of the semiconductor die 15 from the dicing sheet 12, the dicing sheet 12 may be irradiated with ultraviolet rays before picking up each semiconductor die 15 of the wafer. Ultraviolet rays are irradiated to lower the adhesive force of the cut sheet 12. The ultraviolet irradiation may be uneven, and the peelability of each semiconductor die 15 may be changed depending on the position of each semiconductor die 15 on one wafer. Based on such a factor, there are various patterns of peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 in the wafer, and an operator or the like grasps the patterns so that an appropriate gradation value is associated with each semiconductor die 15 of one wafer. For example, as shown in fig. 33, it is conceivable to divide the wafer into two or more (four in fig. 33) pieces in the circumferential direction, and to associate different gradation values with the semiconductor die 15a, the semiconductor die 15b, the semiconductor die 15c, and the semiconductor die 15d belonging to each of the plurality of divided portions. Alternatively, for example, as shown in fig. 34, it is conceivable to divide the wafer into two or more (six in fig. 34) in the radial direction, and to associate different gradation values with the semiconductor die 15a, the semiconductor die 15b, the semiconductor die 15c, the semiconductor die 15d, the semiconductor die 15e, and the semiconductor die 15f belonging to each of the plurality of divided portions. Alternatively, for example, as shown in fig. 35, it is conceivable to divide the wafer partially and associate different gradation values with the semiconductor die 15a, the semiconductor die 15b, the semiconductor die 15c, and the semiconductor die 15d belonging to the respective parts.
In the above-described embodiment, the correlation value between the actual flow rate change and the expected flow rate change is obtained as an index for grasping the peelability of the semiconductor die 15. The larger the correlation value is, the more easily the semiconductor die 15 is peeled from the dicing sheet 12, and the correlation value is the peeling easiness. On the other hand, a value (1.0-correlation value) obtained by subtracting the correlation value from 1.0 takes a value of 0 to 1.0, and a larger value indicates that the semiconductor die 15 is more difficult to peel from the dicing sheet 12, and the value is the difficulty in peeling. As an index for grasping the peelability of the semiconductor die 15, the peeling difficulty may be used instead of the correlation value (peeling easiness). In the above-described embodiment, the threshold value table 161 of fig. 29 (a table in which the larger threshold values TH1 and TH2 are set as the class value is lower) on the premise that the correlation value (ease of peeling) and the value range (0 to 1.0) of the correlation value are used, so that the class value and each semiconductor die 15 are associated with each other. However, a threshold value table 161 (a table in which smaller threshold values TH1 and TH2 are set as the level value is lower) on the premise that the level difficulty (1.0-related value) and the value range (0 to 1.0) of the level difficulty are taken as the premise may be used to associate the level value with each semiconductor die 15. Further, the ease of separation, or difficulty in separation, may also be referred to as the degree of separation.
In the above-described embodiment, the period for comparing the expected flow rate change 157 and the actual flow rate change 158, which are used to obtain the correlation value, is a predetermined period during initial peeling. However, the period in which the expected flow rate change 157 is compared with the actual flow rate change 158 may be the entire period of the initial peeling, the entire period of the main peeling, a predetermined period in the main peeling, or a period in which the initial peeling and the main peeling are combined. The expected flow rate change 157 is stored in the storage unit 152 only during the period of comparison with the actual flow rate change 158.
In the peeling operation described above, the suction pressure of the suction surface 22 of the platen 20 is maintained at the third pressure P close to the vacuum during the initial peeling and the final peeling 3 . However, the third pressure P near vacuum may be set at the initial peeling, the main peeling, the initial peeling and the main peeling 3 And a fourth pressure P close to atmospheric pressure 4 Switching the adsorption pressure one or more times. That is, as one of the peeling parameters of the parameter table 160, the third pressure P may be set 3 And a fourth pressure P 4 The number of times of switching the suction pressure of the suction surface 22 of the stage 20, that is, "the number of times of switching the suction pressure". In the parameter table 160, the parameter value is set so that the higher the gradation value, the more "the number of times of switching of the adsorption pressure". The high-level value is associated with the semiconductor die 15 having poor peelability so that the "number of times of switching of the suction pressure" is increased, thereby facilitating peeling of the semiconductor die 15 from the dicing sheet 12.
In the above-described embodiment, as shown in fig. 36, one control unit 150 functions as pickup control section 600, generation section 602, and display control section 604. However, the semiconductor die pick-up system 500 may include two or more control units 150, and for example, one control unit 150 functions as the pick-up control unit 600, and the other control unit 150 functions as the generation unit 602 and the display control unit 604.
The pick-up system 500 for semiconductor die may also be referred to as a pick-up device for semiconductor die. The semiconductor die pick-up system 500 may be a bonding device (bonding machine, bonding system) or a part of a die bonding device (die bonding machine, die bonding system), or may be called by these names.
< additional notes >
The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and can be implemented in various ways without departing from the spirit of the present invention.

Claims (14)

1. A pick-up system for semiconductor die, which peels and picks up semiconductor die cut from a dicing sheet, the pick-up system characterized by comprising:
A suction head for sucking the semiconductor die;
a suction mechanism connected to the suction head for sucking air from the surface of the suction head;
a flow sensor that detects a suction air flow rate of the suction mechanism;
a control unit that controls a pickup action based on a pickup condition to pick up a semiconductor die from the dicing sheet;
an acquisition unit that acquires actual flow information indicating a temporal change in the suction air flow rate detected by the flow sensor when picking up a semiconductor die; and
a generation unit that generates correspondence information in which any one of a plurality of pickup conditions and individual information of a semiconductor die are associated based on the acquired actual flow information,
the control unit performs control of picking up the semiconductor die from the dicing sheet in accordance with the correspondence information with which each semiconductor die has been associated when picking up the semiconductor die.
2. The semiconductor die pick-up system of claim 1, wherein the generation unit generates:
a rank table associating each semiconductor die in a wafer with a rank value as an identifier of a plurality of the pickup conditions; and
A condition table for establishing a correspondence between any one of the plurality of gradation values and any one of the pickup conditions,
the correspondence information is determined by the level table and the condition table.
3. The semiconductor die pick-up system of claim 2, wherein a plurality of the rank values are values representing a length of time required for pick-up.
4. A pick-up system of semiconductor die according to claim 2 or 3, further comprising:
a display unit for displaying a screen; and
a display control unit for controlling the display of the display screen,
the display control unit displays a map image obtained by imitating each semiconductor die of a wafer on the display unit,
at least one of a color, a pattern, a letter, a number, and a symbol corresponding to the rank value is added to the semiconductor die image corresponding to the semiconductor die having the correspondence with the rank value in the map image.
5. The semiconductor die pick-up system of claim 4, further comprising:
an input unit for inputting information,
the generating unit receives selection of one or more semiconductor die images on the mapped image and selection of one of a plurality of gradation values from the input unit, and
The rank table is generated or updated by associating the selected rank value with a semiconductor die corresponding to the selected semiconductor die image.
6. The semiconductor die pick-up system of claim 4, further comprising:
a storage unit that stores expected flow rate information indicating a temporal change in the suction air flow rate detected by the flow rate sensor at the time of picking up the semiconductor die when the semiconductor die is peeled off from the dicing sheet well,
the acquisition unit acquires the actual flow information indicating a temporal change in the suction air flow rate detected by the flow sensor at the time of picking up each of the semiconductor dies in one wafer,
the generating unit obtains the correlation value between the actual flow information and the expected flow information of each of the plurality of semiconductor dies, and
the rank table is generated or updated by associating the rank value with each of a plurality of semiconductor dies based on each of a plurality of the correlation values.
7. The system according to claim 6, wherein the display control unit displays the correlation value of each semiconductor die corresponding to each semiconductor die image or in the vicinity of each semiconductor die image in the map image of the display portion, or
The display unit displays the correlation value of the semiconductor die corresponding to the specific semiconductor die image at a predetermined position on the screen.
8. The system for picking up semiconductor die according to claim 3, wherein in the rank table, a rank value that makes a time required for picking up shorter is associated with each semiconductor die as going from an outer peripheral side toward an inner peripheral side of one wafer.
9. A pick-up system of semiconductor die according to claim 2 or 3, further comprising:
a stage including an adsorption surface that adsorbs a back surface of the cut sheet; and
an opening pressure switching mechanism for switching an opening pressure of an opening provided in the adsorption surface of the platen between a first pressure close to vacuum and a second pressure close to atmospheric pressure,
the control unit performs control of switching the opening pressure between the first pressure and the second pressure when picking up the semiconductor die,
the kind of the pickup condition includes the number of times of switching the opening pressure between the first pressure and the second pressure.
10. The semiconductor die pick-up system of claim 9, wherein the type of pick-up conditions includes a hold time that holds the opening pressure at the first pressure.
11. The semiconductor die pick-up system of claim 9, further comprising:
a step surface forming mechanism including a plurality of moving elements disposed in the opening, the plurality of moving elements having a front end surface moving between a first position higher than the suction surface and a second position lower than the first position, the step surface forming mechanism forming a step surface with respect to the suction surface,
when picking up a semiconductor die, the control unit performs control to sequentially move the plurality of moving elements from the first position to the second position at predetermined time intervals or simultaneously move the plurality of moving elements from the first position to the second position at predetermined combinations of the moving elements,
the predetermined time is included in the kind of the pickup condition.
12. The semiconductor die pick-up system of claim 11, wherein the type of pick-up condition includes a number of the moving elements that move simultaneously from the first position to the second position.
13. A pick-up system of semiconductor die according to claim 2 or 3, comprising:
the type of the pickup condition includes a standby time from when the suction head lands on the semiconductor die to when the semiconductor die is lifted.
14. A pick-up system for semiconductor die to pick up semiconductor die attached to a surface of a dicing sheet, the pick-up system for semiconductor die characterized by comprising:
a suction head for sucking the semiconductor die;
a suction mechanism connected to the suction head for sucking air from the surface of the suction head;
a flow sensor that detects a suction air flow rate of the suction mechanism;
a control unit that controls a peeling operation for peeling the semiconductor die from the dicing sheet at the time of picking up; and
a display part for displaying the picture,
the control section acquires an actual flow rate change, which is a time change of the suction air flow rate detected by the flow sensor when picking up each semiconductor die in one wafer,
the control unit obtains the peeling easiness or peeling difficulty, i.e., peeling degree, of each of the plurality of semiconductor dies from the dicing sheet based on the actual flow rate change of each of the plurality of semiconductor dies, and
displaying a mapping image obtained by imitating each semiconductor die of a wafer on the display part, and
at least one of a color, a pattern, a letter, a number, and a mark corresponding to the peeling degree of the semiconductor die is added to the semiconductor die image corresponding to the semiconductor die for which the peeling degree is obtained in the map image.
CN201980044462.4A 2018-07-06 2019-07-05 Pick-up system for semiconductor die Active CN112368817B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018129334 2018-07-06
JP2018-129334 2018-07-06
PCT/JP2019/026910 WO2020009243A1 (en) 2018-07-06 2019-07-05 Semiconductor die pickup system

Publications (2)

Publication Number Publication Date
CN112368817A CN112368817A (en) 2021-02-12
CN112368817B true CN112368817B (en) 2024-03-12

Family

ID=69060529

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980044462.4A Active CN112368817B (en) 2018-07-06 2019-07-05 Pick-up system for semiconductor die

Country Status (6)

Country Link
JP (1) JP6883369B2 (en)
KR (1) KR102424153B1 (en)
CN (1) CN112368817B (en)
SG (1) SG11202012864QA (en)
TW (1) TWI745710B (en)
WO (1) WO2020009243A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7421412B2 (en) 2020-05-01 2024-01-24 株式会社Fuji Adsorption device status determination device
WO2021241065A1 (en) * 2020-05-26 2021-12-02 キヤノン株式会社 Suction-attracting mechanism, article manufacturing device, and semiconductor manufacturing device
CN112599467B (en) * 2020-12-15 2022-08-09 长江存储科技有限责任公司 Die picking method and device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002295A (en) * 2004-08-12 2007-07-18 应用材料有限公司 Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process
CN102693930A (en) * 2011-03-23 2012-09-26 株式会社日立高新技术仪器 Pick-up method of die bonder and die bonder
CN103560093A (en) * 2012-05-11 2014-02-05 韩美半导体株式会社 Flip chip bonding apparatus
WO2015129105A1 (en) * 2014-02-26 2015-09-03 株式会社新川 Pickup device and pickup method for semiconductor die
JP5888455B1 (en) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JP2016072381A (en) * 2014-09-29 2016-05-09 ファスフォードテクノロジ株式会社 Semiconductor or electronic component mounting device and semiconductor or electronic component mounting method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945339B1 (en) 1970-08-12 1974-12-03
JPS5813432B2 (en) 1978-10-11 1983-03-14 日立造船株式会社 Tank yard for offshore storage of flammable liquids
JP3956636B2 (en) 2001-03-30 2007-08-08 松下電器産業株式会社 Microwork transfer device and transfer method
TWI463580B (en) * 2007-06-19 2014-12-01 Renesas Electronics Corp Manufacturing method of semiconductor integrated circuit device
US8092645B2 (en) 2010-02-05 2012-01-10 Asm Assembly Automation Ltd Control and monitoring system for thin die detachment and pick-up
JP5348084B2 (en) * 2010-07-20 2013-11-20 パナソニック株式会社 Chip pickup device and chip pickup method
JP2013065628A (en) * 2011-09-15 2013-04-11 Hitachi High-Tech Instruments Co Ltd Die bonder and die pickup device and die pickup method
JP6349496B2 (en) * 2014-02-24 2018-07-04 株式会社新川 Semiconductor die pickup apparatus and pickup method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002295A (en) * 2004-08-12 2007-07-18 应用材料有限公司 Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process
CN102693930A (en) * 2011-03-23 2012-09-26 株式会社日立高新技术仪器 Pick-up method of die bonder and die bonder
CN103560093A (en) * 2012-05-11 2014-02-05 韩美半导体株式会社 Flip chip bonding apparatus
WO2015129105A1 (en) * 2014-02-26 2015-09-03 株式会社新川 Pickup device and pickup method for semiconductor die
CN106030776A (en) * 2014-02-26 2016-10-12 株式会社新川 Pickup device and pickup method for semiconductor die
JP2016072381A (en) * 2014-09-29 2016-05-09 ファスフォードテクノロジ株式会社 Semiconductor or electronic component mounting device and semiconductor or electronic component mounting method
JP5888455B1 (en) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 Semiconductor manufacturing apparatus and semiconductor chip manufacturing method

Also Published As

Publication number Publication date
CN112368817A (en) 2021-02-12
JPWO2020009243A1 (en) 2021-02-15
JP6883369B2 (en) 2021-06-09
TWI745710B (en) 2021-11-11
SG11202012864QA (en) 2021-01-28
WO2020009243A1 (en) 2020-01-09
KR20200124735A (en) 2020-11-03
TW202006836A (en) 2020-02-01
KR102424153B1 (en) 2022-07-25

Similar Documents

Publication Publication Date Title
CN112368817B (en) Pick-up system for semiconductor die
JP5888455B1 (en) Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
US6962279B1 (en) Apparatus and method for glass separation for flat panel displays
CN104600009B (en) Chip measuring sorting system and method
JP4816654B2 (en) Chip peeling device, chip peeling method, and chip pickup device
CN112368818B (en) Pick-up system for semiconductor die
JPH088292B2 (en) Chip mounting device
WO2022257618A1 (en) Wafer surface defect detection device and wafer surface defect detection method
CN104246999B (en) Wafer map verification of data system and wafer map verification of data method
CN108807230B (en) Method for accurately calibrating working position of suction head of sorting machine
JP7408455B2 (en) Die bonding equipment and semiconductor device manufacturing method
JP2001196443A (en) Apparatus and method for picking up semiconductor chip
CN210325719U (en) Crystal grain sorting mechanism
TWI396655B (en) Substrate-separating fixture and method for separating substrates
CN204451477U (en) A kind of silk-screen base
US20050139525A1 (en) Chip sorting apparatus and method for fabricating the same
CN110299303B (en) Chip picking assembly and chip moving method
JPH0376139A (en) Upward pushing movement of semiconductor element
TWI747162B (en) Semiconductor manufacturing device and manufacturing method of semiconductor device
CN216351054U (en) Click pad function test fixture
CN211756469U (en) Drop coating device for sensing electrode
JP2794666B2 (en) Lighting method of semiconductor chip
JP2003332363A (en) Bonding apparatus and method for manufacturing semiconductor device
JP2016195231A (en) Semiconductor production device and semiconductor chip production method
JP2016195233A (en) Semiconductor production device and semiconductor chip production method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant