CN112368817A - Semiconductor die pick-up system - Google Patents

Semiconductor die pick-up system Download PDF

Info

Publication number
CN112368817A
CN112368817A CN201980044462.4A CN201980044462A CN112368817A CN 112368817 A CN112368817 A CN 112368817A CN 201980044462 A CN201980044462 A CN 201980044462A CN 112368817 A CN112368817 A CN 112368817A
Authority
CN
China
Prior art keywords
semiconductor die
pressure
flow rate
semiconductor
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201980044462.4A
Other languages
Chinese (zh)
Other versions
CN112368817B (en
Inventor
马诘邦彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Publication of CN112368817A publication Critical patent/CN112368817A/en
Application granted granted Critical
Publication of CN112368817B publication Critical patent/CN112368817B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor die pick-up system (500) for picking up a semiconductor die (15) comprises: a control unit (150) that controls a peeling operation for peeling the semiconductor die (15) from the dicing sheet (12) during picking up; and a storage unit (152) that stores a correspondence relationship (a level table (159) and a parameter table (160)) that associates each semiconductor die (15) in one wafer with any one of a plurality of predetermined peeling operations. The control unit (150) reads the correspondence relationship from the storage unit (152), and when picking up each semiconductor die (15) of one wafer, the control unit peels and picks up the semiconductor die (15) from the dicing sheet (12) in accordance with a peeling operation that establishes a correspondence relationship with each semiconductor die (15). Thus, the semiconductor die can be picked up by applying a peeling action suitable for each semiconductor die in one wafer.

Description

Semiconductor die pick-up system
Technical Field
The present invention relates to a pick-up (pick up) system for semiconductor dies of a bonding apparatus (bonding system).
Background
Semiconductor dies are manufactured by cutting a wafer (wafer) having a size of 6 inches (inch) or 8 inches into a predetermined size. In the cutting, a dicing sheet (dicing sheet) is attached to the back surface, and the wafer is cut from the front surface side by a dicing saw or the like so as not to cause the cut semiconductor die to fall from seventy-eight places. At this time, the dicing sheet attached to the back surface is slightly cut but not cut, and holds the semiconductor dies. Then, each of the semiconductor dies cut is picked up from the dicing sheet one by one and sent to the next step such as die bonding.
As a method of picking up a semiconductor die from a dicing sheet, the following methods are proposed: in a state where a dicing sheet is adsorbed to the surface of a disk-shaped adsorption plate and a semiconductor die is adsorbed to a suction head (collet), the semiconductor die is lifted up by a top block (block) disposed in the center of the adsorption plate and the suction head is raised, thereby picking up the semiconductor die from the dicing sheet (see, for example, fig. 9 to 23 of patent document 1). In the case of peeling the semiconductor die from the dicing sheet, it is effective to peel the peripheral portion of the semiconductor die first and then peel the central portion of the semiconductor die, and therefore the following method is adopted in the conventional technique described in patent document 1: the top block is divided into 3 blocks of a block for lifting up the peripheral portion of the semiconductor die, a block for lifting up the center of the semiconductor die, and a block for lifting up the middle of the semiconductor die, and the 3 blocks are first raised to a predetermined height, then the blocks in the middle and the center are raised higher than the blocks in the periphery, and finally the block in the center is raised higher than the block in the middle.
Further, the following methods are also proposed: in a state where a dicing sheet is adsorbed to the surface of a disk-shaped top cap (ejector cap) and a semiconductor die is adsorbed to a tip, the tip and peripheral, intermediate, and central top blocks are raised to a predetermined height higher than the surface of the top cap, and then the tip is lowered to a position below the surface of the top cap in the order of the peripheral top blocks and the intermediate top blocks while maintaining the height of the tip (see, for example, patent document 2).
When the dicing sheet is peeled off from the semiconductor bare chip by the method described in patent document 1 or patent document 2, the semiconductor bare chip may be bent and deformed together with the dicing sheet while still being attached to the dicing sheet before the semiconductor bare chip is peeled off, as described in fig. 40, 42, and 44 of patent document 1, and fig. 4A to 4D, and 5A to 5D of patent document 2. If the separating operation of the dicing sheet is continued in a state where the semiconductor die is bent and deformed, the semiconductor die may be damaged, and therefore the following method has been proposed: as shown in fig. 31 of patent document 1, the warpage of the semiconductor die is detected from the change in the flow rate of the suction air from the suction head, and as shown in fig. 43 of patent document 1, when the suction flow rate is detected, it is determined that the semiconductor die has been deformed and the top block has been temporarily lowered, and then the top block is raised again. Further, patent document 3 also discloses that the semiconductor die is curved (deflected) by detecting (discriminating) a change in the flow rate of the suction air from the suction head.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 4945339
Patent document 2: specification of U.S. Pat. No. 8092645
Patent document 3: japanese patent No. 5813432
Disclosure of Invention
Problems to be solved by the invention
In recent years, semiconductor dies have become very thin, and there are semiconductor dies of about 20 μm, for example. On the other hand, since the thickness of the dicing sheet is about 100 μm, the thickness of the dicing sheet is also 4 to 5 times the thickness of the semiconductor die. When such a thin semiconductor die is to be peeled off from the dicing sheet, the semiconductor die is likely to be deformed more significantly following the deformation of the dicing sheet. According to patent document 1, since the peeling operation is changed by detecting the bending of the semiconductor die, there is a possibility that damage to the semiconductor die can be suppressed when the semiconductor die is picked up from the dicing sheet.
However, since the peeling operation is changed (changed immediately) while the warpage of the semiconductor die being picked up is detected, the control of the picking up becomes very complicated. Since a series of processes of detecting the warpage of the semiconductor die, determining whether or not to change the peeling operation based on the detection result, and changing the peeling operation based on the determination result or advancing the operation without changing the peeling operation are repeated a plurality of times, there is a concern that the time taken for the peeling operation will be long. Therefore, in practice, in many cases, the peeling operation when assuming the semiconductor die that is the most difficult to peel is applied uniformly to all the semiconductor dies without such immediate change of the peeling operation. However, in this case, a long-time peeling operation is applied to a semiconductor die which is easy to peel and which can be easily peeled and to which a simplified short-time peeling operation can be originally applied, and the pickup speed becomes low. It is desirable to apply a peeling operation suitable for each semiconductor die, and to appropriately balance the suppression of damage to the semiconductor die and the speeding up of the picking up of the semiconductor die for each semiconductor die.
Further, depending on the position of the semiconductor die in the wafer, the peelability of the semiconductor die from the dicing sheet may sometimes vary. For example, the peelability (easy peelability or difficult peelability) may gradually change from a semiconductor die near the center to a semiconductor die near the outer periphery of the wafer. Alternatively, for example, the peelability of the semiconductor die in a specific region of the wafer may be greatly different from the peelability of the semiconductor die in another region. Such tendency of peelability corresponding to the position of the semiconductor die of the wafer is often the same in a plurality of wafers which are continuously picked up. When semiconductor dies of a plurality of wafers are picked up continuously, the picking-up speed can be increased by applying a short-time peeling operation to the semiconductor dies at positions where peeling is easy. By applying a peeling operation suitable for each semiconductor die based on the peelability at each position of the semiconductor die, it is possible to appropriately balance the suppression of damage to the semiconductor die and the speeding up of the pick-up of the semiconductor die. In order to realize this, a structure for grasping the peelability of each semiconductor die corresponding to the position of each semiconductor die of the wafer is required. Further, after the strippability of each semiconductor die corresponding to the position of each semiconductor die of the wafer is grasped, or when it can be grasped in advance, a configuration for applying a stripping operation suitable for each semiconductor die of the wafer is required.
The present invention aims to enable picking up of each semiconductor die by applying a peeling action (picking-up action) suitable for each semiconductor die. Alternatively, the present invention is directed to determining the peelability of each semiconductor die corresponding to the position of each semiconductor die on a wafer.
Means for solving the problems
The semiconductor die pickup system according to the present invention is a semiconductor die pickup system for picking up a semiconductor die obtained by dicing a wafer by peeling the semiconductor die from a dicing sheet, the semiconductor die pickup system including: a control unit that controls a pickup action based on a pickup condition to pick up a semiconductor die from a cut sheet; and a generation unit that generates correspondence information in which any one of the plurality of pickup conditions is associated with individual information of the semiconductor die, and the control unit performs control of picking up the semiconductor die from the dicing sheet in accordance with the correspondence information in which the correspondence relationship is established for each semiconductor die when the semiconductor die is picked up.
In the semiconductor die picking system according to the present invention, the generation unit may generate: a rank table in which each semiconductor die in one wafer is associated with a rank value of an identifier as a plurality of pickup conditions; and a condition table in which any one of the plurality of gradation values is associated with any one of the pickup conditions, and the association information is determined by the gradation table and the condition table.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the plurality of gradation values are values indicating the length of time required for pickup.
The semiconductor die picking system according to the present invention may further include: a display unit that displays a screen; and a display control unit that displays a map image obtained by simulating each semiconductor die of one wafer on the display unit, wherein at least one of a color, a pattern, a character, a number, and a symbol corresponding to the gradation value is added to the semiconductor die image corresponding to the semiconductor die associated with the gradation value in the map image.
The semiconductor die picking system according to the present invention may further include: and an input unit for inputting information, wherein the generation unit receives selection of one or more semiconductor die images on the mapping image and selection of one of the plurality of gradation values from the input unit, and generates or updates the gradation table by associating the selected gradation value with the semiconductor die corresponding to the selected semiconductor die image.
The semiconductor die picking system according to the present invention may further include: a suction head for sucking the semiconductor bare chip; the suction mechanism is connected with the suction head and sucks air from the surface of the suction head; a flow sensor for detecting the suction air flow rate of the suction mechanism; and a storage unit that stores expected flow rate information indicating a temporal change in suction air flow rate detected by the flow rate sensor at the time of picking up the semiconductor dies when the peeling of the semiconductor dies from the dicing sheet is good, wherein the generation unit acquires actual flow rate information indicating a temporal change in suction air flow rate detected by the flow rate sensor at the time of picking up each semiconductor die in one wafer, and the generation unit obtains a correlation value between the actual flow rate information and the expected flow rate information for each of the plurality of semiconductor dies, and generates or updates the rank table by associating the rank value with each of the plurality of semiconductor dies based on each of the plurality of correlation values.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the display control means displays, in the map image on the display unit, the correlation value of each semiconductor die corresponding to each semiconductor die image in the vicinity of each semiconductor die image or each semiconductor die image, or displays, in the display unit, the correlation value of the semiconductor die corresponding to a specific semiconductor die image at a predetermined position on the screen.
In the semiconductor die picking system according to the present invention, it is also possible to provide: in the rank table, as going from the outer periphery side toward the inner periphery side of one wafer, rank values that make the pickup required time shorter are associated with the respective semiconductor dies.
The semiconductor die picking system according to the present invention may further include: a stage including an adsorption surface that adsorbs a back surface of the cut sheet; and an opening pressure switching mechanism for switching an opening pressure of an opening provided in the suction surface of the stage between a first pressure close to vacuum and a second pressure close to atmospheric pressure, wherein the control unit performs control for switching the opening pressure between the first pressure and the second pressure when picking up the semiconductor die, and the type of the picking-up condition includes the number of times of switching the opening pressure between the first pressure and the second pressure.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the kind of the pickup condition includes a holding time for holding the opening pressure at the first pressure.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the semiconductor die pick-up apparatus includes a step surface forming mechanism including a plurality of moving elements disposed in the opening and having front end surfaces moving between a first position higher than the suction surface and a second position lower than the first position, the step surface forming mechanism forming a step surface with respect to the suction surface, and a control unit performing control to sequentially move the plurality of moving elements from the first position to the second position at intervals of a predetermined time or to simultaneously move the plurality of moving elements from the first position to the second position at combinations of the predetermined moving elements when picking up the semiconductor die, wherein the types of pick-up conditions include the predetermined time.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the kind of the pick-up condition includes the number of the moving elements simultaneously moving from the first position to the second position.
In the semiconductor die picking system according to the present invention, it is also possible to provide: the semiconductor die picking device comprises a suction head for sucking a semiconductor die, wherein the type of the picking condition comprises a standby time from the landing of the suction head on the semiconductor die to the start of the lifting of the semiconductor die.
The semiconductor die pickup system of the present invention is a semiconductor die pickup system that picks up a semiconductor die attached to a surface of a dicing sheet, and is characterized by comprising: a suction head for sucking the semiconductor bare chip; the suction mechanism is connected with the suction head and sucks air from the surface of the suction head; a flow sensor for detecting the suction air flow rate of the suction mechanism; a control unit for controlling a peeling operation for peeling the semiconductor die from the dicing sheet at the time of picking up the semiconductor die; and a display unit that displays a screen, wherein the control unit acquires an actual flow rate change, which is a temporal change in the suction air flow rate detected by the flow rate sensor when each semiconductor die in one wafer is picked up, and wherein the control unit determines a peeling degree, which is the degree of ease or difficulty of peeling from a cut sheet material, of each of the plurality of semiconductor dies based on the actual flow rate change of each of the plurality of semiconductor dies, displays a map image obtained by simulating each semiconductor die of one wafer on the display unit, and adds at least one of a color, a pattern, characters, numerals, and a symbol corresponding to the peeling degree of the semiconductor die to a semiconductor die image corresponding to the semiconductor die for which the peeling degree is determined, in the map image.
ADVANTAGEOUS EFFECTS OF INVENTION
The invention has the following effects: a stripping action (pick-up action) suitable for each semiconductor die can be applied to pick up each semiconductor die. Alternatively, the present invention has the following effects: the peelability of each semiconductor die corresponding to the position of each semiconductor die of one wafer can be grasped.
Drawings
Fig. 1 is an explanatory diagram showing a system configuration of a semiconductor die pickup system according to an embodiment of the present invention.
Fig. 2 is a perspective view showing a stage of a semiconductor die picking system according to an embodiment of the present invention.
Fig. 3 is an explanatory view showing a wafer attached to a dicing sheet.
Fig. 4 is an explanatory view showing a semiconductor die attached to a dicing sheet.
Fig. 5A is an explanatory view showing the configuration of the wafer holder.
Fig. 5B is an explanatory view showing the configuration of the wafer holder.
Fig. 6 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 7 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 8 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 9 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 10 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 11 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 12 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 13 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 14 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 15 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 16 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 17 is an explanatory diagram showing an operation of the semiconductor die picking system according to the embodiment of the present invention at a predetermined gradation value.
Fig. 18 is a diagram showing temporal changes in the height of the suction head, the position of the columnar moving element, the position of the intermediate annular moving element, the position of the peripheral annular moving element, the opening pressure, and the amount of air leakage of the suction head when the system for picking up semiconductor dies according to the embodiment of the present invention operates at a predetermined gradation value.
Fig. 19 is a diagram showing an example of a parameter table according to the embodiment of the present invention.
Fig. 20 is a diagram showing temporal changes in the height of the suction head, the position of the columnar moving element, the position of the intermediate annular moving element, the position of the peripheral annular moving element, and the opening pressure when the semiconductor die picking system according to the embodiment of the present invention operates at another gradation value.
Fig. 21 is a diagram showing temporal changes in the height of the suction head, the position of the columnar moving element, the position of the intermediate annular moving element, the position of the peripheral annular moving element, and the opening pressure when the semiconductor die picking system according to the embodiment of the present invention operates at a further gradation value.
Fig. 22 is an explanatory diagram of identification numbers of the semiconductor dies of one wafer according to the embodiment of the present invention.
Fig. 23 is a diagram showing an example of the rank table according to the embodiment of the present invention.
Fig. 24 is an explanatory diagram showing an example of gradation values associated with the respective semiconductor dies of one wafer.
Fig. 25 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 26 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 27 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 28 is a diagram showing an example of a temporal change in the opening pressure during a predetermined period of initial separation, and an expected flow rate change and an actual flow rate change in the embodiment of the present invention.
Fig. 29 is a diagram showing an example of a threshold value table according to the embodiment of the present invention.
Fig. 30 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 31 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 32 is a diagram showing a setting display screen according to the embodiment of the present invention.
Fig. 33 is an explanatory diagram showing another example of gradation values associated with the respective semiconductor dies of one wafer.
Fig. 34 is an explanatory diagram showing still another example of gradation values associated with the respective semiconductor dies of one wafer.
Fig. 35 is an explanatory diagram showing still another example of gradation values associated with the respective semiconductor dies of one wafer.
Fig. 36 is a functional block diagram of a control unit according to the embodiment of the present invention.
Detailed Description
< constitution >
Hereinafter, a semiconductor die picking system according to an embodiment of the present invention will be described with reference to the drawings. As shown in fig. 1, the semiconductor die pick-up system 500 of the present embodiment includes: a wafer holder 10 that holds a dicing sheet 12, and moves in a horizontal direction, the dicing sheet 12 having a semiconductor die 15 attached to a surface 12 a; a stage 20 disposed on a lower surface of the wafer holder 10 and including a suction surface 22, the suction surface 22 sucking a rear surface 12b of the dicing sheet 12; a plurality of moving elements 30 disposed in the opening 23 provided in the suction surface 22 of the stage 20; a step surface forming means 300 for forming a step surface with respect to the suction surface 22; a stepped surface forming mechanism driving unit 400 for driving the stepped surface forming mechanism 300; a suction head 18 for picking up the semiconductor die 15; a port pressure switching mechanism 80 that switches the pressure of the port 23 of the stage 20; an adsorption pressure switching mechanism 90 for switching the adsorption pressure of the adsorption surface 22 of the platen 20; a suction mechanism 100 for sucking air from the surface 18a of the suction head 18; a Vacuum Apparatus (VAC) 140; a wafer holder horizontal direction driving part 110 driving the wafer holder 10 in a horizontal direction; a stage up-down direction driving part 120 for driving the stage 20 in the up-down direction; a tip driving unit 130 for driving the tip 18 in the vertical and horizontal directions; a control unit 150 that controls the semiconductor die pick-up system 500; an input unit 410 such as a keyboard or a mouse for inputting information; and a display unit 450 which is a display for displaying a screen.
The stepped surface forming mechanism 300 and the stepped surface forming mechanism driving unit 400 are housed in the base portion 24 of the deck 20. The step surface forming mechanism 300 is located at an upper portion of the stage 20, and the step surface forming mechanism driving portion 400 is located at a lower portion of the stage 20. The step-difference surface forming mechanism 300 includes a plurality of moving elements 30 that move in the up-down direction. The stepped surface forming mechanism driving unit 400 moves the respective front end surfaces of the plurality of moving elements 30 downward as indicated by arrow a shown in fig. 1. Details of the moving element 30 will be described later.
The opening pressure switching mechanism 80 that switches the pressure of the opening 23 of the platen 20 includes a three-way valve 81 and a driving unit 82 that drives the three-way valve 81 to open and close. The three-way valve 81 has 3 ports, a first port is connected to the base portion 24 communicating with the opening 23 of the stage 20 by a pipe 83, a second port is connected to the vacuum device 140 by a pipe 84, and a third port is connected to a pipe 85 opened to the atmosphere. The driving unit 82 causes the first port and the second port to communicate with each other and blocks the third port to set the pressure of the opening 23 to the first pressure P close to vacuum1Or the first port and the third port are communicated to block the second port, so that the pressure of the opening 23 is set to a second pressure P close to the atmospheric pressure2Thereby, at a first pressure P1And a second pressure P2To switch the pressure of the opening 23.
The suction pressure switching mechanism 90 for switching the suction pressure on the suction surface 22 of the platen 20 includes a three-way valve 91 having 3 ports and a driving unit 92 for driving the three-way valve 91 to open and close, in the same manner as the opening pressure switching mechanism 80, and the first port is connected to the tank 26 of the platen 20 by a pipe 93The second port of the suction hole 27 is connected to a vacuum apparatus 140 via a pipe 94, and the third port is connected to a pipe 95 opened to the atmosphere. The driving unit 92 communicates the first port with the second port to block the third port, thereby setting the pressure of the groove 26 or the suction surface 22 to a third pressure P close to vacuum3Or the pressure of the groove 26 or the adsorption surface 22 may be set to a fourth pressure P close to the atmospheric pressure by connecting the first port and the third port and blocking the second port4Thus, at the third pressure P3And a fourth pressure P4To switch the pressure of the groove 26 or the suction surface 22.
The suction mechanism 100 for sucking air from the surface 18a of the suction head 18 includes a three-way valve 101 having 3 ports and a driving unit 102 for driving the three-way valve 101 to open and close, as in the open-pressure switching mechanism 80, a first port connected to a suction hole 19 communicating with the surface 18a of the suction head 18 via a pipe 103, a second port connected to a vacuum device 140 via a pipe 104, and a third port connected to a pipe 105 open to the atmosphere. The driving section 102 communicates the first port with the second port to block the third port, and sucks air from the surface 18a of the tip 18 to set the pressure of the surface 18a of the tip 18 to a pressure close to vacuum, or communicates the first port with the third port to block the second port to set the pressure of the surface 18a of the tip 18 to a pressure close to atmospheric pressure. A flow sensor 106 is attached to a pipe 103 that connects the suction hole 19 of the suction head 18 and the three-way valve 101, and the flow sensor 106 detects the flow rate of air (suction air flow rate) sucked from the surface 18a of the suction head 18 to the vacuum apparatus 140.
The wafer holder horizontal direction driving part 110, the stage up-down direction driving part 120, and the suction head driving part 130 drive the wafer holder 10, the stage 20, and the suction head 18 in the horizontal direction, the up-down direction, and the like, for example, by a motor and a gear (gear) provided inside.
The control Unit 150 is a computer (computer) including a Central Processing Unit (CPU) 151 that performs various arithmetic processes or control processes, a storage Unit 152, and a device/sensor interface (interface)153, and the CPU 151, the storage Unit 152, and the device/sensor interface 153 are connected by a data bus (data bus) 154. The storage unit 152 stores: a control program 155 for performing pick-up control of the semiconductor die 15; a setting display program 156 for establishing a correspondence between the peeling operation at the time of picking up and each semiconductor die 15 of one wafer; a rank table 159 (see fig. 23) that associates the rank values of the peeling operations with the semiconductor dies 15 of one wafer; a parameter table 160 (see fig. 19) that associates the level values with the parameter values of the various peeling parameters; an expected flow rate change 157 which is a time change of the suction air flow rate detected by the flow rate sensor 106 at the time of pickup when the semiconductor die 15 is well peeled from the dicing sheet 12; the actual flow rate change 158 is a time change of the suction air flow rate actually detected by the flow rate sensor 106 at the time of pickup. Fig. 36 is a functional block diagram of the control unit 150. The control unit 150 functions as a pickup control unit 600 (control unit) by executing the control program 155. Further, the control unit 150 functions as a generation unit 602 and a display control unit 604, which will be described later, by executing the setting display program 156.
As shown in fig. 1, the open pressure switching mechanism 80, the adsorption pressure switching mechanism 90, the three-way valves 81 and 91 of the pumping mechanism 100, the driving units 82 and 92 of the three-way valve 101, the driving units 102 and 400 of the step surface forming mechanism, the wafer holder horizontal direction driving unit 110, the stage vertical direction driving unit 120, the suction head driving unit 130, and the vacuum apparatus 140 are connected to the equipment/sensor interface 153, and are driven in accordance with instructions from the control unit 150. The flow rate sensor 106 is connected to the device/sensor interface 153, and a detection signal is introduced to the control unit 150 and processed. The input unit 410 and the display unit 450 are also connected to the device/sensor interface 153, input information from the input unit 410 is introduced into the control unit 150, and output image information from the control unit 150 is sent to the display unit 450.
Next, the suction surface 22 of the stage 20 and the moving element 30 will be described in detail. As shown in fig. 2, the stage 20 is cylindrical, and a planar suction surface 22 is formed on the upper surface. In the center of the suction surface 22, a square opening 23 is provided, and in the opening 23, a moving element 30 is mounted. As shown in fig. 6, a gap d is provided between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving element 30. As shown in fig. 2, around the opening 23, a groove 26 is provided so as to surround the opening 23. Each tank 26 is provided with an adsorption hole 27, and each adsorption hole 27 is connected to an adsorption pressure switching mechanism 90.
As shown in fig. 2, the moving element 30 includes a columnar moving element 45 disposed at the center; two intermediate ring-shaped moving elements 40 and 41 arranged around the columnar moving element 45; and a peripheral annular moving element 31 disposed around the intermediate annular moving element 40 and thus disposed at the outermost periphery. Here, the number of the intermediate annular moving elements is two, but the number of the intermediate annular moving elements may be one or three or more. In fig. 6 and subsequent drawings, the number of the intermediate ring-like moving elements 40 is one for the sake of simplicity of explanation. As shown in fig. 6, the front end surfaces 47, 38b, 38a of the columnar moving element 45, the intermediate annular moving element 40, and the peripheral annular moving element 31 are located at a height H protruding from the suction surface 22 of the stage 200And constitutes the same plane (level difference plane with respect to the suction plane 22). When picking up the semiconductor die 15, the peripheral ring moving element 31, the intermediate ring moving element 40, and the columnar moving element 45 are moved from the first position to the second position lower than the first position at intervals of a predetermined time in this order. Alternatively, a combination of defined moving elements are moved simultaneously from the first position to the second position.
< setting (set) step of cut sheet >
Here, a step of providing the dicing sheet 12 with the semiconductor dies 15 attached thereto to the wafer holder 10 is explained. As shown in fig. 3, an adhesive dicing sheet 12 is attached to the back surface of the wafer 11, and the dicing sheet 12 is attached to a metal ring (ring) 13. The wafer 11 is thus handled (handling) in a state of being mounted on the metal ring 13 via the dicing sheet 12. As shown in fig. 4, the wafer 11 is cut from the front surface side by a dicing saw or the like in the cutting step to be each semiconductor die 15. Between the semiconductor dies 15, a cut-in gap 14 formed at the time of dicing is formed. The depth of the cut gap 14 is from the semiconductor die 15 to a part of the dicing sheet 12, but the dicing sheet 12 is not cut, and each semiconductor die 15 is held by the dicing sheet 12.
As such, the semiconductor die 15 mounted with the dicing sheet 12 and the ring 13 is mounted to the wafer holder 10 as shown in fig. 5A and 5B. The wafer holder 10 includes: an annular extension ring (extension ring)16 having a flange portion; and a ring presser 17 for fixing the ring 13 to the flange of the extension ring 16. The ring presser 17 is driven by a ring presser driving unit, not shown, in a direction of advancing and retreating toward the flange of the expander ring 16. The expanding ring 16 has an inner diameter larger than the diameter of the wafer on which the semiconductor die 15 is arranged, and the expanding ring 16 has a predetermined thickness, and the flange is located outside the expanding ring 16 and is attached to the end surface side in the direction away from the dicing sheet 12 so as to protrude outward. The outer periphery of the expanding ring 16 on the cut sheet 12 side is formed into a curved surface so that the cut sheet 12 can be smoothly pulled when the cut sheet 12 is attached to the expanding ring 16. As shown in fig. 5B, the dicing sheet 12 with the semiconductor die 15 attached thereto is in a substantially planar state before being set on the expansion ring 16.
As shown in fig. 1, when the cut sheet 12 is provided on the extension ring 16, the step difference between the upper surface of the extension ring 16 and the flange surface is drawn along the curved surface of the upper portion of the extension ring, and therefore, a tensile force acts on the cut sheet 12 fixed to the extension ring 16 from the center of the cut sheet 12 toward the periphery. In addition, since the dicing sheet 12 is extended by the tensile force, the gap 14 between the semiconductor dies 15 attached to the dicing sheet 12 is enlarged.
< picking action >
Next, a pick-up operation of the semiconductor die 15 will be described. The peelability of each semiconductor die 15 from the dicing sheet 12 sometimes changes depending on the position of each semiconductor die 15 in one wafer. For example, the ease of peeling (easy peelability) may gradually increase from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center of the wafer. The reason is considered to be that: when the dicing sheet 12 is provided to the extension ring 16 of the wafer holder 10, the vicinity of the center of the dicing sheet 12 is more stretched than the vicinity of the outer periphery, and therefore the ease of peeling the semiconductor die 15 near the center of the wafer is further improved. The tendency of the peelability corresponding to the position of the semiconductor die 15 of the wafer is the same in many cases in a plurality of wafers which are continuously picked up. When picking up a plurality of wafers of semiconductor dies 15 in succession, it is possible to increase the speed of picking up by applying a simplified short-time peeling operation (picking operation) to the semiconductor dies 15 at positions where peeling is easy, and it is possible to suppress damage to the semiconductor dies 15 and picking errors by applying a long-time peeling operation (picking operation) to the semiconductor dies 15 at positions where peeling is difficult. Therefore, the semiconductor die picking system 500 according to the present embodiment can change the peeling operation at the time of picking up the semiconductor die 15 in one wafer.
The storage unit 152 stores: as shown in the rank table 159 in fig. 23, the identification number (also referred to as a die identification number or individual information) of each semiconductor die 15 added in accordance with the position of each semiconductor die 15 in one wafer is associated with the rank value; and a parameter table 160 (condition table) as shown in fig. 19, in which each level value is associated with parameter values (also referred to as pickup conditions) of a plurality of types of peeling parameters. The applied peeling operation (parameter value of the peeling parameter) is associated with each semiconductor die 15 in one wafer by the level table 159 and the parameter table 160. In the present embodiment, the rank value defines a rank 1 in which the time required for the peeling operation (pickup time) is shortest to a rank 8 in which the time required for the peeling operation (pickup time) is longest. Before the picking operation, the operator or the like generates the grade table 159 by associating the grade value with each semiconductor die 15 via a setting display screen 460 (see fig. 25) described later, taking into account the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 in the wafer. In the picking operation, the peeling operation (picking operation) is performed for each semiconductor die 15 in one wafer based on the rank values associated with each other with reference to the rank table 159. The following describes the picking operation of the semiconductor die 15 by applying the level-4 peeling operation of the parameter table 160 as an example. The various stripping parameters and setting display screen 460 of the parameter table 160 will be described in detail later.
The control unit 150 functions as a pick-up control means by executing a control program 155 shown in fig. 1, and controls the pick-up operation of the semiconductor die 15. The control section 150 controls a peeling operation to peel the semiconductor die 15 from the dicing sheet 12 as a part of the pickup operation. The controller 150 first moves the wafer holder 10 in the horizontal direction to a position above the standby position of the stage 20 by the wafer holder horizontal direction driver 110. Then, the controller 150 temporarily stops the horizontal movement of the wafer holder 10 after moving the wafer holder 10 to a predetermined position above the standby position of the stage 20. As described above, in the initial state, the respective moving elements 45, 40, and the respective front end surfaces 47, 38b, and 38a of the moving elements 31 are at the height H protruding from the suction surface 22 of the stage 200Therefore, the control unit 150 raises the stage 20 by the stage up-down direction driving unit 120 until the front end surfaces 47, 38b, and 38a of the moving elements 45, 40, and 31 come into close contact with the back surface 12b of the cut sheet 12, and the region of the suction surface 22 slightly away from the opening 23 comes into close contact with the back surface 12b of the cut sheet 12. Then, after the regions of the respective moving elements 45, 40, and 31, which are slightly apart from the opening 23, of the front end surfaces 47, 38b, 38a, and the suction surface 22 are closely attached to the back surface 12b of the cut sheet 12, the control unit 150 stops the raising of the stage 20. Then, the control unit 150 adjusts the horizontal position again by the wafer holder horizontal direction driving unit 110 so that the semiconductor die 15 to be picked up comes directly above the front end surface (step surface) of the moving element 30 slightly protruding from the suction surface 22 of the stage 20.
As shown in fig. 6, the size of the semiconductor die 15 is smaller than the opening 23 of the stage 20 and larger than the width or depth of the moving element 30, so that the outer peripheral end of the semiconductor die 15 is located at the end of the position adjustment of the stage 20Between the inner surface 23a of the opening 23 of the platform 20 and the outer circumferential surface 33 of the moving element 30, i.e. directly above the gap d between the inner surface 23a of the opening 23 and the outer circumferential surface 33 of the moving element 30. In the initial state, the pressure in the groove 26 or the suction surface 22 of the stage 20 is atmospheric pressure, and the pressure in the opening 23 is also atmospheric pressure. In the initial state, the moving elements 45, 40, and the front end surfaces 47, 38b, and 38a of the moving elements 31 protrude from the suction surface 22 of the stage 20 by a height H0So that the height of the back surface 12b of the cut sheet 12 in contact with the respective front end surfaces 47, 38b, 38a is also set to a height H protruding from the suction surface 220In the first position. Further, the back surface 12b of the cut sheet 12 slightly floats from the suction surface 22 at the periphery of the opening 23, and is in close contact with the suction surface 22 in a region away from the opening 23. After the adjustment of the position in the horizontal direction is completed, the control unit 150 lowers the suction head 18 onto the semiconductor die 15 by the suction head driving unit 130 shown in fig. 1, and lands the surface 18a of the suction head 18 on the semiconductor die 15.
Fig. 18 is a graph showing temporal changes in the height of the tip 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, the opening pressure of the opening 23, and the air leakage amount of the tip 18 in the stripping operation (picking-up operation) of level 4. Fig. 18(a) shows the height of the surface 18a of the tip 18, and shows a state where the tip 18 is moved from a time point when a little elapses from a time point t equal to 0 to a time point t 2. At time t1 while the suction head 18 is being moved, the controller 150 switches the three-way valve 101 to a direction in which the suction hole 19 of the suction head 18 communicates with the vacuum apparatus 140 by the driver 102 of the suction mechanism 100. As a result, the suction hole 19 becomes a negative pressure, and air flows into the suction hole 19 from the surface 18a of the suction head 18, so that the suction air flow rate (air leakage rate) detected by the flow rate sensor 106 gradually increases from time t1 to time t2, as shown in fig. 18 (f). At time t2, when the suction head 18 lands on the semiconductor die 15, the semiconductor die 15 is sucked and fixed to the surface 18a, and air cannot flow from the surface 18 a. Thus, at time t2, the air leakage amount detected by the flow rate sensor 106 is converted toAnd (4) reducing. As shown in FIG. 6, the height of the surface 18a of the suction head 18 when the suction head 18 lands on the semiconductor die 15 is set to the height of the respective front end surfaces 47, 38b, 38a of the respective moving elements 45, 40, 31 (height H from the suction surface 22)0) Plus a height Hc obtained by cutting the thickness of the sheet 12 and the thickness of the semiconductor die 15.
Next, at time t2 shown in fig. 18, the control unit 150 outputs a fourth pressure P that sets the suction pressure (not shown) of the suction surface 22 of the platen 20 from the atmospheric pressure4Switched to a third pressure P close to vacuum3The instruction of (1). In response to the command, the drive unit 92 of the suction pressure switching mechanism 90 switches the three-way valve 91 in a direction to communicate the suction port 27 with the vacuum apparatus 140. Then, as indicated by an arrow 201 in fig. 7, the air in the groove 26 is sucked out to the vacuum device 140 through the suction hole 27, and the suction pressure becomes a third pressure P close to the vacuum3. The back surface 12b of the cut sheet 12 around the opening 23 is vacuum-sucked to the surface of the suction surface 22 as indicated by an arrow 202 in fig. 7. The moving elements 45, 40, and the front end faces 47, 38b, 38a of the moving elements 31 are projected from the suction surface 22 of the stage 20 by a height H0Thus applying an obliquely downward tensile force F to the cut sheet 121. Said tensile force F1Decomposable into a stretching force F for stretching the cut sheet 12 in the transverse direction2With a drawing force F for drawing the cut sheet 12 in a downward direction3. Tensile force F in transverse direction2A shear stress τ is generated between the semiconductor die 15 and the surface 12a of the cut sheet 12. Due to the shear stress τ, a deviation occurs between the outer peripheral portion or the peripheral portion of the semiconductor die 15 and the surface 12a of the cut sheet 12. The deviation is a trigger for peeling the dicing sheet 12 from the outer peripheral portion or the peripheral portion of the semiconductor die 15.
As shown in fig. 18(e), the control unit 150 outputs a second pressure P at time t3, which is a pressure at which the opening pressure approaches the atmospheric pressure2Switched to a first pressure P close to vacuum1The instruction of (1). In accordance with the command, the drive unit 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 is closed by the true valveDirection of communication of the empty device 140. Then, as shown by an arrow 206 in fig. 8, the air in the opening 23 is sucked into the vacuum device 140, and as shown in fig. 18(e), at time t4, the opening pressure becomes a first pressure P close to the vacuum1. Thereby, as indicated by an arrow 203 in fig. 8, the cut sheet 12 located directly above the gap d between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving element 30 is stretched downward. Further, the peripheral portion of the semiconductor die 15 located directly above the gap d is pulled by the dicing sheet 12, and is bent and deformed downward as indicated by an arrow 204. Thereby, the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the suction head 18. When the adsorption pressure becomes a third pressure P close to vacuum3At this time, the peripheral portion of the semiconductor die 15 is separated from the front surface 12a of the dicing sheet 12 due to the displacement between the peripheral portion of the semiconductor die 15 and the front surface 12a of the dicing sheet 12, and therefore the peripheral portion of the semiconductor die 15 starts to separate from the front surface 12a of the dicing sheet 12 while being bent and deformed as indicated by an arrow 204 in fig. 8.
When the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the suction head 18 as shown in fig. 8, air flows into the suction hole 19 of the suction head 18 as shown by an arrow 205 in fig. 8. The flow rate of the air flowing in (air leakage amount) is detected by a flow rate sensor 106. Thus, as shown in fig. 18(f), the air leakage amount, which is turned to decrease at time t2 and continues to decrease, starts to increase again at time t 3. Specifically, from the time t3 toward the time t4, the opening pressure is changed from the second pressure P close to the atmospheric pressure2First pressure P reduced to near vacuum1Since the semiconductor die 15 is pulled downward together with the dicing sheet 12 and is bent, the amount of air leakage flowing into the suction hole 19 of the suction head 18 gradually increases from time t3 to time t 4.
Then, as shown in fig. 18(e), the controller 150 maintains the opening 23 of the stage 20 at the first pressure P close to vacuum during a period from time t4 to time t5 (time HT4)1. The time HT4 is the "first pressure holding time" of level 4 specified in the parameter table 160 of fig. 19. In the example of fig. 19, HT4 is 130 ms. Is maintained at a first pressure P1During this period, as shown by an arrow 207 in fig. 9, the peripheral portion of the semiconductor die 15 gradually returns to the surface 18a of the suction head 18 due to the vacuum of the suction hole 19 of the suction head 18 and the elasticity of the semiconductor die 15. Accordingly, at time t4 in fig. 18(f), the air leakage amount decreases continuously and decreases, and when the semiconductor die 15 is vacuum-sucked onto the surface 18a of the suction head 18, the air leakage amount becomes substantially zero immediately before time t 5. At this time, the peripheral portion of the semiconductor die 15 is peeled off from the surface 12a of the dicing sheet 12 located directly above the gap d (initial peeling). Then, as shown in fig. 18(e), the control unit 150 outputs a first pressure P at which the opening pressure is brought close to the vacuum at time t51Switching to a second pressure P close to atmospheric pressure2The instruction of (1). In response to the command, the drive unit 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the pipe 85, which is open to the atmosphere, with the opening 23. Accordingly, as shown by an arrow 210 in fig. 10, air flows into the opening 23, and therefore, as shown in fig. 18(e), the opening pressure approaches the first pressure P of vacuum from time t5 to time t61Second pressure P rising to near atmospheric pressure2。
The time t1 to time t6 in fig. 18 indicate initial peeling. When the semiconductor die 15 and the dicing sheet 12 are poor in peelability (low in ease of peeling), it takes a lot of time until the peripheral portion of the semiconductor die 15 returns to the surface 18a of the suction head 18 as indicated by an arrow 207 in fig. 9 after the peripheral portion of the semiconductor die 15 is pulled by the dicing sheet 12 as indicated by an arrow 204 in fig. 8. For such a semiconductor die 15, the application maintains the opening pressure at the first pressure P1Is long (time from time t4 to time t5 in fig. 18 (e)), or is at a first pressure P close to vacuum1And a second pressure P close to atmospheric pressure2The peeling operation (gradation value) in which the number of times of opening pressure is increased is switched between the steps to promote the peeling between the peripheral portion of the semiconductor die 15 and the dicing sheet 12.
On the other hand, when the semiconductor die 15 and the dicing sheet 12 are excellent in peelability (high in ease of peeling), the peripheral portion of the semiconductor die 15 is stretched by the dicing sheet 12 as indicated by an arrow 204 in fig. 8, and then reaches the peripheral portion of the semiconductor die 15 as indicated by an arrow 207 in fig. 9The time until the return to the surface 18a of the suction head 18 is short. For such a semiconductor die 15, the application maintains the opening pressure at the first pressure P1Is short or at a first pressure P close to vacuum1And a second pressure P close to atmospheric pressure2The number of times of opening pressure is switched between the peeling operation (gradation value) and the pickup speed is increased. In the example of level 4 in fig. 18, the number of times of switching the opening pressure at the time of initial peeling is 1 (from the second pressure P)2Switching to the first pressure P1Thereafter from a first pressure P1Switching to the second pressure P2Case of count 1). This is "number of switching of opening pressure at initial peeling" (FSN4) of class 4 defined in the parameter table 160 of fig. 19.
As described above, since the time from when the peripheral portion of the semiconductor die 15 is pulled by the dicing sheet 12 to when the peripheral portion of the semiconductor die 15 returns to the surface 18a of the suction head 18 varies depending on the ease of separation of the semiconductor die 15, the time variation (actual flow rate variation) of the air leakage amount detected by the flow rate sensor 106 also varies. Therefore, as described in detail later, the ease of separation of the semiconductor die 15 from the dicing sheet 12 can be determined based on the actual flow rate change.
The description of the pickup action is continued. At t6 in FIG. 18, when the opening pressure rises to the second pressure P close to the atmospheric pressure2At this time, the cut sheet 12, which is pulled downward by the vacuum and is located directly above the gap d, is returned upward by the tensile force applied when it is fixed to the wafer holder 10, as indicated by an arrow 212 in fig. 10. The cut sheet 12 around the opening 23 is slightly lifted from the suction surface 22 by the tensile force.
When the opening pressure becomes the second pressure P close to the atmospheric pressure at time t6 as shown in fig. 18(e)2Then, as shown in fig. 18(d), the control unit 150 outputs a command for setting the height of the distal end surface 38a of the peripheral annular moving element 31 to the first position (the height from the suction surface 22 is H)0Initial position of) is lowered by a height H1In the second position. According to said command, as shown in FIG. 1The stepped surface forming mechanism driving unit 400 drives to lower the peripheral ring-shaped moving element 31 as indicated by an arrow 214 in fig. 11. The front end surface 38a of the peripheral ring-shaped moving element 31 is moved to a height H from the first position (initial position)1A second position slightly lower than the adsorption surface 22 (a height lower than the adsorption surface 22 (H) is1-H0) The location of (d).
Next, as shown in fig. 18, controller 150 maintains the state from time t6 to time t 7. At this time, the pressure of the opening 23 becomes a second pressure P close to the atmospheric pressure2Therefore, as shown in fig. 11, a gap is left between the back surface 12b of the cut sheet 12 located directly above the gap d and the front end surface 38a of the peripheral annular moving element 31.
As shown in fig. 18(e), the control unit 150 outputs a second pressure P at time t7, which is a pressure at which the opening pressure approaches the atmospheric pressure2Switched to a first pressure P close to vacuum1The instruction of (1). In accordance with the command, the drive portion 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the opening 23 with the vacuum apparatus 140. As a result, as indicated by arrow 215 in fig. 12, the air in the opening 23 is sucked into the vacuum device 140, and at time t8, the opening pressure becomes a first pressure P close to the vacuum1. When the opening pressure is from the second pressure P close to the atmospheric pressure2First pressure P reduced to near vacuum1At this time, the cut sheet 12 positioned immediately above (facing) the front end surface 38a of the peripheral annular moving element 31 is pulled downward as indicated by an arrow 216 in fig. 12, so that the back surface 12b comes into contact with the front end surface 38 a. As a result, as indicated by an arrow 217 in fig. 12, a part of the semiconductor die 15 located immediately above the front end surface 38a of the semiconductor die 15 bends and deforms downward and separates from the surface 18a of the suction head 18, and air flows into the suction hole 19 of the suction head 18. The amount of air leakage into the suction hole 19 is detected by the flow sensor 106. As shown in fig. 18(f), the air leakage amount increases from time t7 to time t8, at which the opening pressure decreases. Then, when the opening pressure reaches the first pressure P1At a time t8, the semiconductor die 15 in the region facing the front end surface 38a returns toward the front surface 18a of the suction head 18 as indicated by an arrow 224 shown in fig. 13. Thus, in the figureAt a time t8 around 18(f), the air leakage amount decreases, and becomes substantially zero when the semiconductor die 15 is vacuum-sucked to the surface 18a of the suction head 18 as shown in fig. 13. At this time, the region of the semiconductor die 15 facing the front end surface 38a is peeled from the surface 12a of the dicing sheet 12. Further, the time taken for the region of the semiconductor die 15 facing the front end surface 38a to be pulled by the dicing sheet 12 as indicated by an arrow 217 in fig. 12 and then returned to the surface 18a of the suction head 18 as indicated by an arrow 224 in fig. 13 varies depending on the peelability of the semiconductor die 15 from the dicing sheet 12.
Next, as shown in fig. 18(e), when reaching time t9, the control unit 150 outputs a first pressure P at which the opening pressure approaches the vacuum level1Second pressure P rising to near atmospheric pressure2The instruction of (1). In response to the command, the drive unit 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 communicates with the pipe 85 that is open to the atmosphere. As a result, as indicated by arrow 220 in fig. 13, air flows into opening 23, and at time t10, the pressure in opening 23 rises to second pressure P close to atmospheric pressure2. Thereby, as indicated by an arrow 223 in fig. 13, the cut sheet 12 immediately above the gap d is displaced upward away from the front end surface 38a of the peripheral annular moving element 31.
At time t10 in fig. 18, the control unit 150 outputs a command for moving the distal end surface 38b of the intermediate ring-shaped moving element 40 to the first position (height H from the suction surface 22)0Position of) is lowered by height H1And the front end surface 38a of the peripheral annular moving element 31 located at the second position is moved to a position lower than the first position (initial position) by the height H2Third position (low H from the adsorption surface 22)2-H0The location of (d). In response to the command, the stepped surface forming mechanism driving unit 400 shown in fig. 1 drives the intermediate annular moving element 40 to descend as indicated by an arrow 227 in fig. 14, and the peripheral annular moving element 31 to descend as indicated by an arrow 226. The front end surface 38b of the intermediate annular moving element 40 moves from the first position (higher than the suction surface by a height H)0Position of) is lowered by height H1Second position (low H from the adsorption surface 22)1-H0And the front end surface 38a of the peripheral ring-shaped moving element 31 is moved to a position lower than the first position (initial position) by the height H2Third position (low H from the adsorption surface 22)2-H0The location of (d). Thus, as shown in fig. 14, the distal end surfaces 38a, 38b, and 47 are stepped surfaces having a step therebetween and are stepped surfaces with respect to the suction surface 22.
Next, as shown in fig. 18, controller 150 maintains the state from time t10 to time t 11. Then, at time t11 in fig. 18(e), the control unit 150 outputs a second pressure P at which the opening pressure approaches the atmospheric pressure2Switched to a first pressure P close to vacuum1Is specified. In accordance with the command, the drive portion 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so as to communicate the opening 23 with the vacuum apparatus 140. As a result, as indicated by arrow 228 in fig. 15, the air in the opening 23 is sucked into the vacuum device 140, and at time t12, the opening pressure becomes a first pressure P close to the vacuum1. Then, as shown by arrows 229 and 230 in fig. 15, the cut sheet 12 is stretched and displaced downward toward the front end surface 38a of the peripheral annular moving element 31 lowered to the third position and the front end surface 38b of the intermediate annular moving element 40 lowered to the second position. Accordingly, the region of the semiconductor die 15 facing the front end surface 38a and the front end surface 38b is also separated from the front surface 18a of the suction head 18 and is bent and deformed downward as indicated by an arrow 231 in fig. 15. Then, as indicated by an arrow 232 in fig. 15, air flows into the suction hole 19 from between the surface 18a of the suction head 18 and the semiconductor die 15. The amount of air leakage into the suction hole 19 is detected by the flow sensor 106. As shown in fig. 18(f), the air leakage amount gradually increases from time t11 to time t12, at which the opening pressure gradually decreases. Then, when the opening pressure reaches the first pressure P1At time t12, the semiconductor die 15 in the region facing the front end surfaces 38a and 38b returns toward the surface 18a of the suction head 18 as indicated by an arrow 244 shown in fig. 16. As a result, the amount of air leakage decreases around time t12 in fig. 18(f), and when the semiconductor die 15 is vacuum-sucked onto the surface 18a of the suction head 18 as shown in fig. 16, the amount of air leakage becomes substantially zero. The time until the suction head 18 returns to the surface 18a thereof varies depending on the peelability of the semiconductor die 15 and the dicing sheet 12.
Next, as shown in fig. 18(e), the control unit 150 outputs a first pressure P at time t13, which is a pressure at which the opening pressure approaches the vacuum level1Switching to a second pressure P close to atmospheric pressure2The instruction of (1). In response to the command, the drive unit 82 of the opening-pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 communicates with the pipe 85 that is open to the atmosphere. Then, as indicated by an arrow 241 in fig. 16, air flows into the opening 23, and the opening pressure rises, so that the cut sheet 12 is displaced in the upward direction as indicated by an arrow 243 in fig. 16. As shown in fig. 18(e), at time t14, the opening pressure becomes a second pressure P close to the atmosphere2. In this state, as shown in fig. 16, although the semiconductor die 15 in the region corresponding to the front end surface 47 of the columnar moving element 45 is attached to the dicing sheet 12, most of the region of the semiconductor die 15 is in a state of being peeled from the dicing sheet 12.
Next, at time t14 in fig. 18, control unit 150 outputs a command for moving distal end surface 47 of columnar moving element 45 to the first position (height from suction surface 22 is H)0Position of) is lowered by height H1And the front end surface 38b of the intermediate ring-like moving element 40 located at the second position is moved to a position lower than the first position (initial position) by the height H2Third position (low H from the adsorption surface 22)2-H0The location of (d). In response to the command, the stepped surface forming mechanism driving unit 400 shown in fig. 1 drives the columnar moving element 45 to descend as indicated by an arrow 260 in fig. 17, and the intermediate annular moving element 40 to descend as indicated by an arrow 246. The front end face 47 of the columnar moving element 45 moves to the first position (higher than the suction surface by a height H)0Position of) is lowered by height H1And the front end surface 38b of the intermediate ring-like moving element 40 is moved to a position lower than the first position (initial position) by the height H2The third position of (2). Thereby, as shown in fig. 17, the semiconductor die 15 is peeled from the dicing sheet 12.
The control unit 150 outputs a command to raise the suction head 18 at time t15 in fig. 18. In response to the command, the tip driving unit 130 shown in fig. 1 drives the motor to raise the tip 18 as shown in fig. 17. When the suction head 18 is raised, the semiconductor die 15 is picked up in a state of being sucked by the suction head 18.
After picking up the semiconductor die 15, the control unit 150 returns the respective front end surfaces 38a, 38b, and 47 of the respective moving elements 31, 40, and 45 to the first position at time t16, and causes the suction pressure switching mechanism 90 to change the suction pressure of the suction surface 22 of the stage 20 from the third pressure P close to the vacuum3Switching to a fourth pressure P close to atmospheric pressure4. At this point, the pickup ends.
The main peeling is performed from time t6 to time t16 in fig. 18 described above. In the main peeling, the moving element 30 from the outer moving element 30 to the inner moving element 30 sequentially moves the tip end surface from the first position to the second position, and the tip end surface is pressed by the first pressure P1And a second pressure P2The opening pressure is switched to separate the region of the semiconductor die 15 inside the peripheral portion from the surface 12a of the dicing sheet 12. In the main peeling described above, the first pressure P is set1And a second pressure P2The opening pressure is switched, but the moving elements 30 may be sequentially moved while the opening pressure is maintained at the first pressure close to the vacuum.
Here, the peeling parameters of the peeling operation of fig. 18 described above are checked. The peeling operation of fig. 18 described above is performed by applying the parameter values of the respective peeling parameters specified in level 4 of the parameter table 160 of fig. 19. Specifically, the following values of parameters of the peeling parameters are applied. "number of times of switching of opening pressure at initial peeling (from second pressure P)2Switching to the first pressure P1Thereafter from a first pressure P1Switching to the second pressure P2The same applies hereinafter to the case where the count is 1 time) "indicates that FSN4 is 1 time. The "number of times of switching of opening pressure at the time of main peeling" is set to SSN4 to 2 times. Maintaining the opening pressure at a first pressure P1The "holding time of the first pressure" is set to HT4 being 130 ms.The "number of moving elements which descend simultaneously" is set to DN4 — 0. The "lowering time interval between moving elements" when the tip end surface of each moving element 30 is sequentially lowered from the first position to the second position is set to 240ms, which is IT 4. The "nozzle standby time" which is the time from when the nozzle 18 lands on the semiconductor die 15 to when the semiconductor die 15 starts to be lifted is set to WT4 equal to 710 ms. Also, the "pickup time" is PT4 — 820 ms.
< parameter Table >
Here, the parameter table 160 of fig. 19 will be described in more detail. The parameter values of the peeling parameters in the parameter table 160 tend to be as follows in accordance with the change in the level value. As shown in fig. 19, the "number of times of switching of opening pressure at initial peeling" is increased by an amount from level 1 to level 8. However, this does not mean that the number of times of switching is necessarily increased every time the gradation value is changed, and the number of times of switching may be the same among a plurality of adjacent gradation values. The same applies to other peeling parameters, which do not mean that the parameter value changes every time the level value changes, and there are cases where the parameter values in adjacent level values are the same. The number of times of switching of the opening pressure during the main peeling is increased from level 1 to level 8. In addition, the "holding time of the first pressure" extends from level 1 to level 8. The "falling time interval between moving elements" extends the time interval from level 1 to level 8. In addition, the "tip standby time" is extended from level 1 to level 8. The "pick-up time" changes every time the level value changes, and becomes longer from level 1 to level 8. The "pick-up time" is similar to the "tip standby time", but includes not only the tip standby time but also a time required for the tip 18 to descend from the predetermined position and land on the semiconductor die 15 and a time required for the tip to ascend from the start of the lifting of the semiconductor die 15 to the predetermined position. The parameter table 160 in fig. 19 may be referred to as a "condition table", and the peeling parameter may be referred to as a "pickup parameter". The specific parameter values shown in fig. 19 are merely examples, and may be other values.
Here, the peeling operation of the level 1 and the level 8 will be described as an example of the peeling operation other than the peeling operation of the level 4. First, the peeling operation of level 8 will be described. The rank 8 is a rank value that should be associated with the semiconductor die 15 that is very difficult to peel. FIG. 20 is a graph showing the height of the tip 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, and the opening pressure of the opening 23 in the peeling operation of class 8. Comparing the peeling operation at level 8 in fig. 20 with the peeling operation at level 4 in fig. 18, the following is known.
In the peeling operation of level 8 in fig. 20, the "number of times of switching of opening pressure at the time of initial peeling" was increased to 4 times (FSN 8). Thus, even when the periphery of the semiconductor die 15 is difficult to be peeled from the dicing sheet 12, the periphery of the semiconductor die 15 can be sufficiently peeled from the dicing sheet 12. Switching the opening pressure a plurality of times gives the impression (image) of shaking off the dicing sheet 12 attached around the semiconductor die 15, and it takes time to reliably peel off the die. In fig. 20, the "first pressure holding time" (HT8) at the time of initial peeling was set to 150ms (see fig. 19, and the detailed parameter values are also referred to in the following description). This promotes the periphery of the semiconductor die 15 to naturally peel off from the dicing sheet 12. In the example of fig. 19, the "first pressure holding time" is not greatly different between level 4 and level 8, but it is also conceivable that the difference is larger.
In the peeling operation at level 8 in fig. 20, the "number of times of switching of the opening pressure at the time of main peeling" is increased to 4 times (SSN 8). Thus, even when the region of the semiconductor die 15 inside the periphery is difficult to peel off from the dicing sheet 12, the dicing sheet 12 attached to the semiconductor die 15 can be reliably peeled off so as to be shaken off. In fig. 20, the "first pressure holding time" (HT8) at the time of main peeling was set to 150ms and extended. This promotes the semiconductor die 15 to naturally peel off from the dicing sheet 12 in the region inside the periphery. In the parameter table 160 shown in FIG. 19, "first pressure" is applied during the initial peeling and the final peelingThe force retention time "(HT 8) is the same, but the parameter table 160 may specify" retention time of first pressure "which is different between the initial peeling and the main peeling. Further, as shown in fig. 20, when the opening pressure is switched a plurality of times at the time of initial peeling or main peeling, a plurality of opening pressures are held at the first pressure P1In the case of (2), a plurality of "holding times of the first pressure" may be defined in the parameter table 160, and the parameter values may be different from each other. For example, a plurality of "holding times of the first pressure" are arranged in the order of application in the peeling operation and defined in the parameter table 160.
In the peeling operation at level 8 in fig. 20, the "inter-moving-element falling time interval" (IT8) is extended to 450 ms. If the time from lowering the front end surface 38a of the peripheral annular moving element 31 from the first position to the second position to lowering the front end surface 38b of the intermediate annular moving element 40 from the first position to the second position is extended, the region of the semiconductor die 15 facing the front end surface 38a of the peripheral annular moving element 31 can be promoted to be naturally peeled off from the dicing sheet 12. Similarly, if the time from lowering the front end surface 38b of the intermediate annular moving element 40 from the first position to the second position to lowering the front end surface 47 of the columnar moving element 45 from the first position to the second position is extended, the region of the semiconductor die 15 facing the front end surface 38b of the intermediate annular moving element 40 can be promoted to be naturally peeled off from the dicing sheet 12. In addition, the falling time interval between the peripheral ring-shaped moving element 31 and the middle ring-shaped moving element 40 and the falling time interval between the middle ring-shaped moving element 40 and the columnar moving element 45 may be different, and in this case, each falling time interval is defined in the parameter table 160. As shown in fig. 2, the number of the intermediate annular moving elements 40 and the number of the intermediate annular moving elements 41 may be two or more, and in this case, the peeling operation is performed while the intermediate annular moving elements 40 on the outer peripheral side are sequentially lowered toward the intermediate annular moving elements 41 on the inner peripheral side. In the case where the number of the intermediate annular moving elements 40 and the intermediate annular moving elements 41 is two or more as described above, the parameter table 160 may define a falling time interval between the intermediate annular moving element 40 and another intermediate annular moving element 41. For example, the parameter table 160 may specify a time from a time point when the pickup operation is started (time t1 in fig. 20) to a time point when the peripheral ring-shaped moving element 31 (the first-to-be-lowered moving element 30) is lowered from the first position to the second position.
In the peeling operation at level 8 in fig. 20, the "tip standby time" (WT8) was set to 1590ms and extended. In fig. 20, the "pickup time" (PT8) becomes 1700 ms.
Next, the peeling operation of level 1 will be described. Level 1 is a level value that should be correlated with the semiconductor die 15 that is very easy to peel. FIG. 21 is a graph showing the height of the tip 18, the position of the columnar moving element 45, the position of the intermediate annular moving element 40, the position of the peripheral annular moving element 31, and the opening pressure of the opening 23 in the peeling operation of class 1. Comparing the peeling operation at level 1 in fig. 21 with the peeling operation at level 4 in fig. 18, the following is known.
In the peeling operation of level 1 in fig. 21, the "first pressure holding time" (HT1) at the time of initial peeling was set to 100ms and shortened. In the case where the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the "holding time of the first pressure" is shortened, the periphery of the semiconductor die 15 is sufficiently peeled from the dicing sheet 12. By shortening the "holding time of the first pressure" in this manner, the time required for the peeling operation can be shortened.
In the peeling operation at level 1 in fig. 21, the "number of times of switching of the opening pressure at the time of main peeling" is reduced to 1 time (SSN 1). In the case where the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the "number of times of switching the opening pressure at the time of main peeling" is 1, the region of the semiconductor die 15 inside the periphery is sufficiently peeled from the dicing sheet 12. In fig. 21, the front end faces 38a, 38b, and 47 of the 3 moving elements 30 (the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45) are simultaneously lowered from the first position to the second position or less, and the "number of moving elements that are simultaneously lowered" is increased to 3 (DN 1). In the case where the semiconductor die 15 is easily peeled from the dicing sheet 12, even if the plurality of moving elements 30 are simultaneously lowered, the region of the semiconductor die 15 inside the periphery is immediately peeled from the dicing sheet 12. When the peripheral annular moving element 31 and the intermediate annular moving element 40 are simultaneously lowered and the columnar moving element 45 is lowered after a predetermined time, the "number of simultaneously lowered moving elements" is 2. In the parameter table 160 of fig. 19, two peeling parameters "the number of moving elements which are simultaneously lowered" and "the lowering time interval between the moving elements" are defined, but instead of these parameters, "the lowering time interval between the peripheral annular moving element 31 and the intermediate annular moving element 40", "the lowering time interval between the intermediate annular moving element 40 and the columnar moving element 45", and "the lowering time interval between the intermediate annular moving element 40 and the other intermediate annular moving element 41" may be defined. In this case, in order to simultaneously lower the plurality of moving elements 30, one or more of these falling time intervals may be set to 0.
In the peeling operation at level 1 in fig. 21, the "tip standby time" (WT1) was set to 460ms and shortened. In fig. 21, the "pickup time" (PT1) is 570ms and becomes shorter.
As described above, the values of the parameters of the peeling parameters are different depending on the gradation values, that is, the peeling operation (pickup operation) is different. By performing the peeling operation by associating the level value close to the level 8 with the semiconductor die 15 at a position difficult to be peeled in one wafer, it is possible to suppress breakage of the semiconductor die 15 or a pickup error at the time of pickup. On the other hand, by performing the peeling operation by associating the level value close to level 1 with the semiconductor die 15 at a position where peeling is easy in one wafer, picking up can be performed in a short time. Also, the plurality of level values may be referred to as values representing the length of time required for pickup. The parameter values of the respective peeling parameters may be referred to as "pickup conditions", and the parameter values of the ranks 1 to 8 of the same kind of peeling parameters (for example, "the number of times of switching of the opening pressure at the time of initial peeling") are "plural pickup conditions". In addition, the kind of the peeling parameter shown in fig. 19 may be defined as "kind of the pickup condition".
< rating Table >
Next, the level table 159 will be explained in detail. Fig. 22 is an explanatory diagram of the identification numbers (die identification numbers, individual information) of the semiconductor dies 15 of one wafer, and fig. 23 is a diagram showing an example of the level table 159. As shown in fig. 22, the identification number including the position in the X direction (X coordinate) and the position in the Y direction (Y coordinate) of each semiconductor die 15 of one wafer 11 is associated with each semiconductor die 15. For example, the semiconductor die 15 located at the upper leftmost position of the wafer 11 corresponds to the identification numbers "1 to 9" because the position in the X direction is "1" and the position in the Y direction is "9", and similarly, the semiconductor die 15 adjacent to the semiconductor die 15 on the right side corresponds to the identification numbers "1 to 10" because the position in the X direction is "1" and the position in the Y direction is "10".
As shown in fig. 23, the rank table 159 associates the identification number (die identification number, individual information) of each semiconductor die with the rank value. That is, the rank table 159 associates each semiconductor die in one wafer with a rank value of an identifier that is a parameter value (a plurality of pickup conditions) of the peeling parameter. The peeling operation corresponding to the gradation value is associated with each semiconductor die 15 of one wafer by the gradation table 159 and the parameter table 160. The level table 159 and the parameter table 160 specify correspondence information in which one of a plurality of pick-up conditions (parameter values of levels 1 to 8) among various peeling parameters is associated with individual information (identification information) of the semiconductor die.
Fig. 24 is a diagram in which shading or shading corresponding to a gradation value associated with each semiconductor die 15 is added to each semiconductor die 15 of one wafer in accordance with the gradation table 159 in fig. 23. As described above, the ease of peeling (easy peelability) may gradually increase from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in one wafer. In this case, as shown in fig. 24, the level value for establishing the correspondence relationship is made lower from the semiconductor die 15 near the outer periphery to the semiconductor die 15 near the center in the wafer (the peeling operation is simplified so that the time required for the peeling operation is shortened). In fig. 24, a rank 7 is associated with the outermost semiconductor die 15e (semiconductor die hatched with left diagonal lines), a rank 6 is associated with the semiconductor die 15d on the inner peripheral side of the semiconductor die 15e (semiconductor die hatched with right diagonal lines), and a rank 5 is associated with the semiconductor die 15c (semiconductor die hatched with dark gray) on the inner peripheral side of the semiconductor die 15d, a rank 4 is associated with the semiconductor die 15b (semiconductor die hatched with light gray) on the inner peripheral side of the semiconductor die 15c, and a rank 3 is associated with the semiconductor die 15a (semiconductor die hatched with white) near the center, respectively. Note that the same shading or shading as in fig. 24 to be added to each semiconductor die 15 or each semiconductor image (described later) in fig. 25 to 27 and 30 to 35 described below means that the shading or shading is associated with the same gradation value as that in fig. 24. As shown in fig. 24, by applying a peeling operation (high-level value) that sufficiently promotes peeling to the semiconductor die 15 at a position that is difficult to peel, damage to the semiconductor die and a pickup error at the time of pickup can be suppressed, and by applying a simple peeling operation (low-level value) to the semiconductor die 15 at a position that is easy to peel, pickup can be performed in a short time. Since the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 shows the same tendency in the plurality of wafers, the semiconductor dies 15 of the plurality of wafers are successively picked up using the ranking table 159 as shown in fig. 23 and 24.
< setting display Screen >
Next, a setting display screen 460 on which an operator or the like creates or edits (updates) the ranking table 159 will be described. Fig. 25 to 27 are diagrams showing an example of the setting display screen 460. The control unit 150 executes the setting display program 156 stored in the storage unit 152, thereby displaying the setting display screen 460 on the display unit 450 (monitor), and receiving reading, generation, and updating of the ranking table 159. The control unit 150 functions as a display control means, and thereby displays the setting display screen 460 on the display unit 450. As will be described later, the setting display program 156 is executed to receive an instruction to automatically acquire the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 on the wafer. As shown in fig. 25, the setting display screen 460 includes: a mapping image 480 that mimics each semiconductor die of a wafer and includes a plurality of semiconductor die images 482; an operation button group 464 including buttons 468 for various operations; and a rank value button group 462 including buttons 466 of "rank 1" to "rank 8".
When the rank values are associated with the respective semiconductor dies 15 as shown in fig. 23 and 24, that is, when the rank table 159 is generated, the operator or the like can display the correspondence specified by the rank table 159 in the map image 480 of the setting display screen 460. Specifically, the operator or the like moves the pointer 478 on the setting display screen image 460 to the position of the "readout" button 468 with the mouse (input unit 410) as shown in fig. 25, and clicks (selects) the button. Thereby, the correspondence relationship defined in the level table 159 is read out, and the correspondence relationship is displayed on the map image 480. Specifically, in the map image 480, a color corresponding to a gradation value associated with each semiconductor die 15 is added to each semiconductor die image 482 corresponding to each semiconductor die 15. Fig. 25 shows a case where the gradation table 159 having the correspondence relationship between the respective semiconductor dies 15 and the gradation values shown in fig. 23 and 24 has been read. By thus adding a color corresponding to the gradation value to each semiconductor die image 482, an operator or the like can easily grasp which gradation value has been associated with the semiconductor die at each position. Here, although each semiconductor die image 482 is given a color corresponding to a gradation value, each semiconductor die image 482 in the map image 480 may be given at least one of a color, a pattern, characters, numerals, and symbols corresponding to a gradation value.
The operator or the like can edit the gradation table 159 read out from the map image 480 of the setting display screen 460. The case will be described after the description of the method of newly generating the level table 159. In the present embodiment, a mouse is used for moving the pointer 478 or selecting a button, but a joystick or the like may be used.
Fig. 26 is a diagram showing an example of a setting display screen image 460 when the new gradation table 159 is generated. The operator or the like moves the indicator 478 to the "new" button 468 and clicks the button 468, thereby setting the display screen 460 to be the new screen of the gradation table 159. At this time, a temporary gradation table 159 in which a preset gradation value is associated with all the semiconductor dies 15 of one wafer is created, and a color corresponding to the preset gradation value is added to each semiconductor die image 482 in the map image 480. In fig. 26, the preset gradation value is level 3, and a color (white) corresponding to level 3 is added to each semiconductor die image 482. From this state, the operator or the like associates a desired gradation value with each semiconductor die image 482, thereby associating the gradation value with the semiconductor die 15 corresponding to each semiconductor die image 482.
Specifically, as shown in fig. 26, the indicator 478 is first moved to a button 466 for a desired rank value (rank 5 in fig. 26), and the rank value is selected by clicking the button 466. Then, as shown in fig. 27, the index 478 is moved to the semiconductor die image 482b to be associated with the selected gradation value, and the semiconductor die image 482b is clicked. Thus, the selected rank value is brought into correspondence with the semiconductor die corresponding to the clicked semiconductor die image 482 b. In addition, a color corresponding to the selected gradation value is added to the semiconductor die image 482 b. Fig. 27 shows a state in which three semiconductor die images 482b are clicked and a color corresponding to the selected level 5 is added to the semiconductor die images 482 b. The operator or the like repeatedly selects the gradation value and the semiconductor die image (semiconductor die) associated with the selected gradation value in this manner, thereby creating or editing the gradation table 159. The control unit 150 functions as a generation means, and receives selection of the gradation value and selection of the semiconductor die image (semiconductor die).
When the creation or editing of the rating table 159 is completed, the index 478 is moved to the "rewrite storage" button 468, and the button 468 is clicked (selected), whereby the creation (generation) of the rating table 159 is completed. When the "rewrite storage" button 468 is clicked, the control unit 150 functions as a generation unit and generates the rank table 159. When there are a plurality of level tables 159, the following configuration may be considered for identifying each level table 159: the archive name is added to the level table 159 and stored in the storage unit 152, and the archive name is specified at the time of reading, and the level table 159 is read from the storage unit 152. In the above-described embodiment, the pointer 478 clicks the "save new file" button 468, and a file name is added from the keyboard or the like of the input unit 410, and the ranking table 159 is stored in the storage unit 152. In this case, when the "save new file" button 468 is clicked, the control unit 150 functions as a generation means and generates the ranking table 159. When the "read" button 468 is clicked by the index 478, the file name of the grade table 159 to be read is specified from the plurality of grade tables 159, and the desired grade table 159 is read on the setting display screen 460.
As shown in fig. 25, when the level table 159 is read out from the map image 480 of the setting display screen 460 and then the level table 159 is edited (updated), the editing is performed by the same method as in the case of the above-described addition. That is, in fig. 25, after button 466 of a desired gradation value is clicked (selected) by index 478, semiconductor die image 482 (semiconductor die) to be changed to the selected gradation value is clicked by index 478. Thus, the selected gradation value is associated with the semiconductor die 15 corresponding to the selected semiconductor die image 482, and the semiconductor die image 482 is colored in accordance with the gradation value.
The operator starts picking up the semiconductor die 15 by pressing a button for picking up, not shown, in a state where the rank table 159 is read out on the setting display screen 460, that is, in a state where a color corresponding to the rank value is added to each semiconductor die image 482 in the map image 480. The button for executing the pickup may be in the form of clicking a button displayed on the screen with a mouse of the input unit 410, or in the form of pressing a physically present button with a hand or finger by an operator or the like. By pressing a button for picking up, the control unit 150 executes the control program 155 stored in the storage unit 152 to pick up the semiconductor die 15. At this time, the peeling operation is performed for each semiconductor die 15 of each wafer in accordance with the grade table 159 read out from the map image 480 of the setting display screen 460.
< obtaining of peelability of semiconductor dies in one wafer >
Next, the obtaining of the peelability of each semiconductor die 15 of one wafer will be described. The operator or the like can associate a more accurate gradation value with each semiconductor die 15 by grasping the peelability (easy peelability or difficult peelability) of each semiconductor die 15 corresponding to the position of each semiconductor die 15 on the wafer. Therefore, the semiconductor die pick-up system 500 according to the present embodiment can automatically acquire the peelability of each semiconductor die corresponding to the position of each semiconductor die of the wafer. The automatic acquisition of the peelability of each semiconductor die 15 will be described in detail below.
< method for measuring peelability >
First, a method of detecting the peelability of the semiconductor die 15 from the dicing sheet 12 by the semiconductor die pickup system 500 will be described. The peelability of the semiconductor die 15 from the dicing sheet 12 can be detected from a temporal change (actual flow rate change) in the suction air flow rate of the suction head 18 detected by the flow rate sensor 106.
Fig. 28 is a diagram showing the change over time between the opening pressure at the time of initial peeling and the air leakage amount (suction air flow amount) of the tip 18 detected by the flow sensor 106, and the respective times t1, t2, t3, and t4 have the same meanings as those of the respective times shown in fig. 18. A solid line 157 in the graph of the air leakage amount in fig. 28 is a predicted flow rate change 157, which is a temporal change in the air leakage amount when the semiconductor die 15 is well peeled from the dicing sheet 12 (when the peeling easiness is very high), and the predicted flow rate change 157 is stored in the storage unit 152 in advance. Specifically, the expected flow rate change 157 stored in the storage unit 152 may be a set of a plurality of suction air flow rates acquired at a predetermined sampling period, and may be a suction air flow rate associated with a plurality of discrete times t. The one-dot chain line 158a and the two-dot chain line 158b in the graph of the air leakage amount of fig. 28 are examples of actual flow rate changes 158, which are temporal changes in the air leakage amount detected when the semiconductor die 15 is actually picked up from the cut sheet 12. The actual flow variation 158 is saved to the storage section 152 each time a semiconductor die 15 is picked up. Specifically, the actual flow rate change 158 stored in the storage unit 152 may be in any form that can be compared with the expected flow rate change 157, and may be, for example, a set of a plurality of suction air flow rates acquired at a predetermined sampling cycle and a suction air flow rate associated with a plurality of discrete times t, as with the expected flow rate change 157. The actual flow rate change may be referred to as "actual flow rate information", and the expected flow rate change may be referred to as "expected flow rate information".
When the peeling of the semiconductor die 15 from the dicing sheet 12 is good, the opening pressure is increased to the first pressure P close to vacuum at time t31When the change is started, the periphery of the semiconductor die 15 is separated from the surface 18a of the suction head 18 (see fig. 8), but the periphery of the semiconductor die 15 is immediately returned to the surface 18a of the suction head 18 (see fig. 9). Therefore, as in the expected flow rate change 157 of fig. 28, the air leakage amount increases from time t3, but immediately decreases (decreases at time tr _ exp). The expected flow rate change 157 also increases the amount of air leakage less.
On the other hand, when the peelability of the semiconductor die 15 from the dicing sheet 12 is poor (when the peeling easiness is low), the opening pressure is set to the first pressure P close to the vacuum at time t31At the beginning of the change, the periphery of the semiconductor die 15 is moved away from the surface 18a of the suction head 18, and after a certain amount of time has elapsed, the periphery of the semiconductor die 15 is returned to the surface 18a of the suction head 18. Therefore, as in the actual flow rate change 158a of fig. 28, the air leakage amount increases from time t3, continues to increase, and then decreases at time tr _ rel later than time tr _ exp. In addition, the actual flow rate is changedIn the case of 158a, the amount of air leakage increases.
In addition, in the case where the peelability of the semiconductor die 15 from the dicing sheet 12 is very poor (in the case where the ease of peeling is very low), even if a certain amount of time has elapsed after the periphery of the semiconductor die 15 has been separated from the surface 18a of the suction head 18, the periphery of the semiconductor die 15 does not return to the surface 18a of the suction head 18. Therefore, as in the actual flow rate change 158b of fig. 28, even when the first pressure P close to vacuum is reached from the opening pressure1At time tc _ end when the predetermined time has elapsed from time t4, the air leakage amount is also kept large.
As described above, the less the semiconductor die 15 is peelable from the dicing sheet 12, the more the actual flow rate variation 158 deviates from the expected flow rate variation 157. Therefore, when the actual flow rate change 158 is compared with the expected flow rate change 157, the more similar the actual flow rate change 158 is to the expected flow rate change 157, the better the peelability (the higher the ease of peeling). Alternatively, the stronger the correlation between the actual flow rate variation 158 and the expected flow rate variation 157, the better the peelability (the higher the ease of peeling). In the present embodiment, the actual flow rate variation 158 is compared with the expected flow rate variation 157, and the correlation value of these is obtained. The correlation value is a value of 0 to 1.0, is 1.0 when the actual flow rate variation 158 completely matches the expected flow rate variation 157, and is determined to be more likely to peel as the flow rate variation approaches 1.0 from 0. In the present embodiment, the correlation value is set to a range of 0 to 1.0, but may be other values.
The period for comparing the actual flow rate variation 158 with the expected flow rate variation 157 is, for example, time t1 in fig. 28 (the time when air suction starts from the surface 18a of the suction head 18) which is a part of the initial peeling period
Time to time tc _ end (since the first opening pressure reached the first pressure P)1Time t4 at which a predetermined time has elapsed). Alternatively, the period during which comparison is performed may be time t3 (the opening pressure starts to move toward the first pressure P) which is a part of the initial peeling period1Time of change) to tc _ end. The period for comparison may be other periods.
Further, as the peelability of the semiconductor die 15 from the dicing sheet 12, a value other than the correlation value between the actual flow rate variation 158 and the expected flow rate variation 157 may be obtained. For example, it can be determined that the smaller the difference between the value of the expected flow rate change 157 at the time tc _ end and the value of the actual flow rate change 158 at that time in fig. 28, the better the peelability (the higher the ease of peeling). For example, it may be determined that the greater the difference between the time tr _ exp at which the air leakage flow rate changes from increasing to decreasing in the expected flow rate variation 157 and the time tr _ rel at which the air leakage flow rate changes from increasing to decreasing in the actual flow rate variation 158, the greater the ease of separation. For example, it may be determined that the greater the difference between the maximum value of the air leakage flow rate of the expected flow rate change 157 detected after time t3 in fig. 28 and the maximum value of the air leakage flow rate of the actual flow rate change 158 detected after that time, the greater the ease of separation.
It is also conceivable to detect the peelability of the semiconductor die 15 from the dicing sheet 12 without using the expected flow rate variation 157. For example, the smaller the value of the actual flow rate change 158 at time tc _ end in fig. 28, the better the peelability (the higher the ease of peeling). Further, the index value indicating the peelability of the semiconductor die 15 from the dicing sheet 12 obtained based on the actual flow rate change 158 or an index value instead of the correlation value may also be referred to as an "evaluation value".
< display of peelability on setting display Screen >
Next, a method of displaying the peelability of the semiconductor die 15 detected as described above from the dicing sheet 12 on the setting display screen 460 will be described. When the operator wants to grasp the peelability of each semiconductor die 15 at the position of each semiconductor die 15 on one wafer, the operator clicks an "automatic acquisition" button 468 by using an index 478 as shown in fig. 30. Thus, the control unit 150 executes the control program 155 of the storage unit 152, and picks up each semiconductor die 15 of one wafer by a peeling operation (pickup operation) at a predetermined gradation value. At this time, the control unit 150 functions as a generation unit, acquires the actual flow rate variation 158 each time the semiconductor die 15 is picked up, obtains a correlation value between the actual flow rate variation 158 and the expected flow rate variation 157, and stores the actual flow rate variation 158 and the correlation value in the storage unit 152.
Then, each time the semiconductor die 15 is picked up, the control section 150 (generation unit) compares the correlation value with the threshold TH1 and the threshold TH2 of each rank value in the threshold table 161 shown in fig. 29. Fig. 29 shows an example of the threshold value table 161, and the threshold value table 161 is a table stored in advance in the storage unit 152 and used for determining which gradation value should be applied to the semiconductor die 15 based on the correlation value. In the threshold value table 161, the range of each rank value is set by the lower threshold value TH1 and the upper threshold value TH2, and the lower the rank value is, the larger the threshold values TH1 and TH2 are set. For example, the range of the rank 4 is 0.81 (lower threshold TH1) to 0.85 (upper threshold TH2), the range of the rank 1 is 0.96 (lower threshold TH1) or more, and the range of the rank 8 is 0.65 (upper threshold TH2) or less. The control unit 150 (generation means) searches for a range of the rank value to which the obtained correlation value belongs, and acquires the rank value to which the correlation value belongs. For example, if the obtained correlation value is 0.78, a rank 5 (range: 0.76 to 0.80) is obtained. In this manner, each time each semiconductor die 15 of one wafer is picked up, the control section 150 acquires the rank value to which the correlation value belongs from the threshold value table 161. Then, the control unit 150 associates the gradation value with the semiconductor die 15 (die identification number) for which the correlation value is obtained. That is, the control unit 150 (generating means) gradually creates the gradation table 159. Then, the control unit 150 adds a color corresponding to the gradation value to each semiconductor die image 482 in the map image 480 based on the gradation table 159 created in the slow manner, as shown in fig. 30.
In this way, the magnitude of the correlation value (ease of separation) of each semiconductor die 15 is represented in a stepwise manner by the gradation value in the map image 480. An operator or the like can easily grasp how much the semiconductor die is easily peeled at which position by observing the map image 480 as shown in fig. 30. In addition, since the rank table 159 can be created only by clicking the "auto acquire" button 468, the rank table 159 can be directly applied when picking up each semiconductor die of a plurality of wafers after that. Further, the operator or the like can edit the gradation table 159 in which the gradation values are automatically associated with the respective semiconductor dies 15 as shown in fig. 30. That is, in the same manner as in the case of the edit level table 159, in the setting display screen 460 of fig. 30, after the button 466 of a desired level value is selected by the indicator 478, the semiconductor die image 482 of which the level value is to be changed in the map image 480 may be selected by the indicator 478. Here, although each semiconductor die image 482 in the map image 480 is given a color corresponding to a gradation value, each semiconductor die image 482 may be given at least one of a color, a pattern, a character, a numeral, and a symbol that changes more finely depending on the magnitude of a correlation value (ease of separation).
Further, the semiconductor die picking system 500 according to the present embodiment has a configuration that enables an operator or the like to grasp in detail the peelability of each semiconductor die 15 of one wafer. As shown in fig. 31, when the index 478 is moved to the predetermined semiconductor die image 482c of the map image 480, a bubble 486 appears, and a waveform and a correlation value of an actual flow rate change of the semiconductor die 15 corresponding to the semiconductor die image 482c at the position of the index 478 are displayed in the bubble 486. In the air bubble 486 shown in fig. 31, not only the actual flow rate change but also the expected flow rate change is shown by a solid line. In this way, the actual flow rate change and the correlation value of each semiconductor die 15 are displayed on the setting display screen 460, so that the operator or the like can know the detachability of each semiconductor die 15 in detail. In the map image 480, a correlation value of each semiconductor die 15 corresponding to each semiconductor die image 482 may be added to each semiconductor die image 482. Alternatively, the correlation value of the semiconductor die 15 corresponding to the specific one or more semiconductor die images 482 may be displayed at a predetermined position on the setting display screen 460.
< Effect >
The semiconductor die pick-up system 500 described above stores, in the storage unit 152, correspondence information (the level table 159 and the parameter table 160) in which each semiconductor die 15 in one wafer is associated with one pick-up condition (parameter value) of a plurality of pick-up conditions (parameter values of levels 1 to 8) among various peeling parameters. When picking up each semiconductor die 15 of one wafer, the semiconductor die 15 is peeled from the dicing sheet 12 and picked up in accordance with a peeling operation in which a correspondence relationship is established with each semiconductor die 15 with reference to the correspondence information. Therefore, the semiconductor dies 15 can be picked up by applying a peeling operation suitable for each wafer. Further, according to the semiconductor die pickup system 500 described above, the peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 of one wafer can be grasped.
< others >
In the embodiment described above, the setting display screen 460 is a screen for creating or updating the gradation table 159. However, the parameter values in the parameter table 160 (condition table) may be set on the setting display screen 460. For example, as shown in fig. 32, a window 490 for parameter value setting is displayed on the setting display screen 460 so that parameter values can be set. Specifically, first, the button 466 for setting the gradation value of the parameter value is selected (clicked) by the index 478, and then the button 470 for "detailed setting" is clicked by the index 478. As a result, a window 490 for setting the parameter value of the peeling parameter for the selected gradation value appears as shown in fig. 32. Then, the character box 492 of the parameter value to be changed or reset in the window 490 is clicked by the pointer 478, and the parameter value is input from the keyboard of the input unit 410. Then, when the input of all parameter values is finished, the "store" button 472 in the window 490 is clicked by the index 478. Thereby changing or resetting the parameter value of the peeling parameter at the selected level value. The control unit 150 functions as a generation means to receive the parameter values and update or generate the parameter table 160 by clicking the "store" button 472. In this way, if the parameter values in the parameter table 160 can be changed and set on the setting display screen 460, the parameter values of the peeling parameters at the respective gradation values can be very easily adjusted.
In the above-described embodiment, the case where the peeling easiness (easy peeling) gradually increases from the semiconductor die 15 near the outer periphery toward the semiconductor die 15 near the center in the wafer is described as an example. However, in addition to this, there are various patterns of peelability of the semiconductor dies 15 corresponding to the positions of the semiconductor dies 15 in the wafer. On the back side of the semiconductor die 15, a film called a Die Attachment Film (DAF) is sometimes attached. The DAF is picked up together with the semiconductor die 15 in a state of being attached to the back surface of the semiconductor die 15, and then functions as an adhesive between the semiconductor die 15 and the substrate when the semiconductor die 15 is bonded to the substrate. In a state where the semiconductor die 15 is attached to the dicing sheet 12, DAF exists between the semiconductor die 15 and the dicing sheet 12. In order to improve the peelability of the DAF attached to the back surface of the semiconductor die 15 and the dicing sheet 12, the dicing sheet 12 may be irradiated with ultraviolet rays before picking up each semiconductor die 15 of the wafer. Ultraviolet rays are irradiated to reduce the adhesive force of the cut sheet 12. The irradiation of ultraviolet rays may be uneven, and the peeling property of each semiconductor die 15 may vary depending on the position of each semiconductor die 15 on one wafer. Based on such factors, there are various patterns of peelability of each semiconductor die 15 corresponding to the position of each semiconductor die 15 in the wafer, and an operator or the like grasps the patterns so as to associate an appropriate gradation value with each semiconductor die 15 of one wafer. For example, it is conceivable that the wafer is divided into two or more (four in fig. 33) in the circumferential direction as shown in fig. 33, and different gradation values are associated with the semiconductor dies 15a, 15b, 15c, and 15d belonging to each of the plurality of divided portions. Alternatively, for example, as shown in fig. 34, the wafer may be divided into two or more (six in fig. 34) in the radial direction, and different gradation values may be associated with the semiconductor dies 15a, 15b, 15c, 15d, 15e, and 15f belonging to the respective divided portions. Alternatively, for example, it is conceivable to divide the wafer partially as shown in fig. 35 and to associate different gradation values with the semiconductor dies 15a, 15b, 15c, and 15d belonging to the respective portions.
In the above-described embodiment, the correlation value between the actual flow rate change and the expected flow rate change is obtained as an index for grasping the peelability of the semiconductor die 15. The correlation value is 0 to 1.0, and a larger value indicates that the semiconductor die 15 is more easily peeled from the dicing sheet 12, and the correlation value is easier to peel. On the other hand, the value obtained by subtracting the correlation value from 1.0 (1.0-correlation value) is 0 to 1.0, and a larger value indicates that the semiconductor die 15 is more difficult to peel from the dicing sheet 12, and thus the value indicates the difficulty of peeling. As an index for grasping the peelability of the semiconductor die 15, the difficulty of peeling can be used instead of the correlation value (ease of peeling). In the embodiment described above, the threshold value table 161 of fig. 29 (a table in which the threshold values TH1 and TH2 are set larger as the rank value is lower) is used on the premise of the correlation value (ease of separation) and the range of values of the correlation value (0 to 1.0), and the rank value is associated with each semiconductor die 15. However, the level values may be associated with the semiconductor dies 15 by using a threshold value table 161 (a table in which threshold values TH1 and TH2 are set smaller as the level value is lower) assuming that the degree of difficulty in peeling (1.0 — correlation value) and the range of values of difficulty in peeling (0 to 1.0) are set. The ease of peeling or difficulty of peeling may also be referred to as the degree of peeling.
In the above-described embodiment, the period during which the expected flow rate variation 157 is compared with the actual flow rate variation 158 to obtain the correlation value is a predetermined period in the initial peeling. However, the period during which the expected flow rate variation 157 is compared with the actual flow rate variation 158 may be the entire period of the initial peeling, the entire period of the main peeling, a predetermined period in the main peeling, or a period in which the initial peeling and the main peeling are combined. The expected flow rate change 157 is stored in the storage unit 152 only during the comparison with the actual flow rate change 158.
In the above-described peeling operation, the suction pressure of the suction surface 22 of the stage 20 is maintained at the initial peeling time and the final peeling timeThird pressure P of near vacuum3. However, the third pressure P may be set to be close to vacuum at the time of initial peeling, or final peeling, or at the time of initial peeling and final peeling3And a fourth pressure P close to atmospheric pressure4One or more times of switching the adsorption pressure. That is, one of the peeling parameters in the parameter table 160 may be set at the third pressure P3And a fourth pressure P4The number of times of switching the suction pressure of the suction surface 22 of the stage 20 is "the number of times of switching the suction pressure". In the parameter table 160, the parameter values are set so that the "number of times of switching of suction pressure" increases as the rank value increases. The high level value is associated with the semiconductor die 15 having poor peelability so that the "number of times of switching of suction pressure" is increased, thereby promoting the peeling of the semiconductor die 15 from the dicing sheet 12.
In the above-described embodiment, as shown in fig. 36, one control unit 150 functions as a pickup control unit 600, a generation unit 602, and a display control unit 604. However, the semiconductor die pick-up system 500 may include two or more control units 150, and for example, one control unit 150 functions as the pick-up control unit 600, and the other control unit 150 functions as the generation unit 602 and the display control unit 604.
The semiconductor die pick-up system 500 may also be referred to as a semiconductor die pick-up device. The semiconductor die pick-up system 500 may be a bonding device (bonding machine, bonding system) or a part of a die bonding device (die bonding machine, die bonding system), and these names may also be referred to.
< accompanying notes >
While the embodiments of the present invention have been described above, the present invention is not limited to the embodiments, and can be implemented in various forms without departing from the spirit of the present invention.
Description of the symbols
10: wafer holder
11: wafer with a plurality of chips
12: cutting sheet
12 a: surface of
12 b: back side of the panel
13: ring (C)
14: gap
15. 15a, 15b, 15c, 15d, 15e, 15 f: semiconductor bare chip
16: expansion ring
17: ring pressing piece
18: suction head
18 a: surface of
19: suction hole
20: platform
22: adsorption surface
23: opening of the container
23 a: inner surface
24: base body part
26: trough
27: adsorption hole
30: moving element
31: peripheral ring-shaped moving element
33: peripheral surface
38a, 38b, 47: front end face
40. 41: intermediate ring-shaped moving element
45: columnar moving element
80: opening pressure switching mechanism
81. 91, 101: three-way valve
82. 92, 102: driving part
83-85, 93-95, 103-105: piping
90: adsorption pressure switching mechanism
100: suction mechanism
106: flow sensor
110: wafer holder horizontal direction driving part
120: platform up-down direction driving part
130: suction head driving part
140: vacuum device
150: control unit
151：CPU
152: storage unit
153: device/sensor interface
154: data bus
155: control program
156: setting display program
157: expecting flow variation
158. 158a, 158 b: actual flow variation
159: grade table
160: parameter table
161: threshold value table
300: step surface forming mechanism
400: step surface forming mechanism driving part
410: input unit
450: display unit
460: setting display screen
462: rank value button group
464: operation button group
466. 468, 470, 472: push button
478: index (I)
480: mapping images
482. 482a, 482b, 482 c: semiconductor die image
486: air bubble
490: window
492: character box
500: semiconductor die pick-up system
600: pick-up control unit (control unit)
602: generating unit
604: display control unit

Claims (14)

1. A semiconductor die pick-up system for separating and picking up a semiconductor die obtained by dicing a wafer from a dicing sheet, the semiconductor die pick-up system comprising:
a control unit that controls a pickup action based on a pickup condition to pick up a semiconductor die from the dicing sheet; and
a generation unit that generates correspondence information in which any one of the plurality of pickup conditions is associated with individual information of the semiconductor die,
the control unit performs control of picking up the semiconductor dies from the dicing sheet in accordance with the correspondence information that establishes a correspondence relationship with each semiconductor die when picking up the semiconductor dies.
2. The semiconductor die pick-up system of claim 1, wherein the generation unit generates:
a rank table in which each semiconductor die in one wafer is associated with a rank value that is an identifier of a plurality of the pickup conditions; and
a condition table in which any one of the plurality of gradation values is associated with any one of the pickup conditions,
the corresponding information is determined by the grade table and the condition table.
3. The semiconductor die pick-up system of claim 2, wherein the plurality of level values are values representing a length of time required for pick-up.
4. A system for picking up semiconductor dies according to claim 2 or 3, characterized in that it comprises:
a display unit that displays a screen; and
a display control unit for controlling the display of the display unit,
the display control unit displays a map image imitating each semiconductor die of one wafer on the display section,
in the mapping image, at least one of a color, a pattern, a character, a number, and a symbol corresponding to the gradation value is added to the semiconductor die image corresponding to the semiconductor die associated with the gradation value.
5. The semiconductor die pick-up system of claim 4, comprising:
an input unit for inputting information,
the generation unit accepts selection of one or more semiconductor die images on the map image and selection of one of the gradation values from the plurality of gradation values from the input section, and
the rank table is generated or updated by associating the selected rank value with a semiconductor die corresponding to the selected semiconductor die image.
6. The semiconductor die pick-up system of claim 4, comprising:
a suction head for sucking the semiconductor bare chip;
a suction mechanism connected to the suction head for sucking air from a surface of the suction head;
a flow sensor that detects a suction air flow rate of the suction mechanism; and
a storage unit that stores expected flow rate information indicating a temporal change in the suction air flow rate detected by the flow rate sensor at the time of picking up the semiconductor die when the semiconductor die is well peeled from the dicing sheet,
the generation unit acquires actual flow rate information representing a temporal change in the suction air flow rate detected by the flow rate sensor when each of the semiconductor dies in one wafer is picked up,
obtaining a correlation value between the actual flow rate information and the expected flow rate information for each of a plurality of semiconductor dies, and
the rank table is generated or updated based on each of a plurality of the correlation values by associating the rank value with each of a plurality of semiconductor dies.
7. The semiconductor die pickup system according to claim 6, wherein the display control unit displays the correlation value of each semiconductor die corresponding to each semiconductor die image in the vicinity of each semiconductor die image or each semiconductor die image in the map image of the display section, or
The display unit displays the correlation value of the semiconductor die corresponding to the specific semiconductor die image at a predetermined position on a screen.
8. The system for picking up semiconductor dies according to claim 3, wherein in the gradation table, gradation values for which a time required for picking up is shorter as going from an outer circumferential side toward an inner circumferential side of one wafer are associated with the respective semiconductor dies.
9. A system for picking up semiconductor dies according to claim 2 or 3, characterized in that it comprises:
a stage including an adsorption surface that adsorbs a back surface of the cut sheet; and
an opening pressure switching mechanism that switches an opening pressure of an opening provided in the adsorption surface of the stage between a first pressure near vacuum and a second pressure near atmospheric pressure,
the control unit performs control of switching the opening pressure between the first pressure and the second pressure when picking up a semiconductor die,
the kind of the pickup condition includes a number of switching times of switching the opening pressure between the first pressure and the second pressure.
10. The semiconductor die pick-up system of claim 9, wherein the type of pick-up condition comprises a hold time to hold the opening pressure at the first pressure.
11. The semiconductor die pick-up system of claim 9, comprising:
a step surface forming mechanism including a plurality of moving elements disposed in the opening and having tip end surfaces moving between a first position higher than the suction surface and a second position lower than the first position, the step surface forming mechanism forming a step surface with respect to the suction surface,
the control unit performs control of sequentially moving the plurality of moving elements from the first position to the second position at intervals of a predetermined time or simultaneously moving the plurality of moving elements from the first position to the second position at a combination of the predetermined moving elements, respectively, at the time of picking up the semiconductor die,
the specified time is included in the kind of the pickup condition.
12. The semiconductor die picking system of claim 11, wherein the type of picking condition includes a number of the moving elements that move simultaneously from the first position to the second position.
13. A system for picking up semiconductor dies according to claim 2 or 3, characterized in that it comprises:
the type of the pick-up condition includes a standby time from landing of the suction head on a semiconductor die to start lifting of the semiconductor die.
14. A semiconductor die pick-up system that picks up a semiconductor die attached to a surface of a dicing sheet, the semiconductor die pick-up system characterized by comprising:
a suction head for sucking the semiconductor bare chip;
a suction mechanism connected to the suction head for sucking air from a surface of the suction head;
a flow sensor that detects a suction air flow rate of the suction mechanism;
a control section that controls a peeling operation to peel the semiconductor die from the dicing sheet at the time of pickup; and
a display part for displaying a picture,
the control section acquires an actual flow rate variation which is a temporal variation of the suction air flow rate detected by the flow rate sensor when picking up each semiconductor die in one wafer,
the control unit obtains a peeling degree, which is an easy degree or a difficult degree of peeling from the dicing sheet, of each of the plurality of semiconductor dies based on the actual flow rate change of each of the plurality of semiconductor dies, and obtains the peeling degree
A mapping image obtained by simulating each semiconductor bare chip of a wafer is displayed on the display part, and
in the map image, at least one of a color, a pattern, a character, a number, and a symbol corresponding to the degree of peeling of the semiconductor die is added to the semiconductor die image corresponding to the semiconductor die for which the degree of peeling has been obtained.
CN201980044462.4A 2018-07-06 2019-07-05 Pick-up system for semiconductor die Active CN112368817B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018129334 2018-07-06
JP2018-129334 2018-07-06
PCT/JP2019/026910 WO2020009243A1 (en) 2018-07-06 2019-07-05 Semiconductor die pickup system

Publications (2)

Publication Number Publication Date
CN112368817A true CN112368817A (en) 2021-02-12
CN112368817B CN112368817B (en) 2024-03-12

Family

ID=69060529

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980044462.4A Active CN112368817B (en) 2018-07-06 2019-07-05 Pick-up system for semiconductor die

Country Status (6)

Country Link
JP (1) JP6883369B2 (en)
KR (1) KR102424153B1 (en)
CN (1) CN112368817B (en)
SG (1) SG11202012864QA (en)
TW (1) TWI745710B (en)
WO (1) WO2020009243A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7421412B2 (en) 2020-05-01 2024-01-24 株式会社Fuji Adsorption device status determination device
CN115699272A (en) * 2020-05-26 2023-02-03 佳能株式会社 Suction mechanism, article manufacturing apparatus, and semiconductor manufacturing apparatus
CN112599467B (en) * 2020-12-15 2022-08-09 长江存储科技有限责任公司 Die picking method and device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002295A (en) * 2004-08-12 2007-07-18 应用材料有限公司 Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process
CN102693930A (en) * 2011-03-23 2012-09-26 株式会社日立高新技术仪器 Pick-up method of die bonder and die bonder
CN103560093A (en) * 2012-05-11 2014-02-05 韩美半导体株式会社 Flip chip bonding apparatus
WO2015129105A1 (en) * 2014-02-26 2015-09-03 株式会社新川 Pickup device and pickup method for semiconductor die
JP5888455B1 (en) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JP2016072381A (en) * 2014-09-29 2016-05-09 ファスフォードテクノロジ株式会社 Semiconductor or electronic component mounting device and semiconductor or electronic component mounting method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945339B1 (en) 1970-08-12 1974-12-03
JPS5813432B2 (en) 1978-10-11 1983-03-14 日立造船株式会社 Tank yard for offshore storage of flammable liquids
JP3956636B2 (en) 2001-03-30 2007-08-08 松下電器産業株式会社 Microwork transfer device and transfer method
TWI463580B (en) * 2007-06-19 2014-12-01 Renesas Electronics Corp Manufacturing method of semiconductor integrated circuit device
US8092645B2 (en) 2010-02-05 2012-01-10 Asm Assembly Automation Ltd Control and monitoring system for thin die detachment and pick-up
JP5348084B2 (en) * 2010-07-20 2013-11-20 パナソニック株式会社 Chip pickup device and chip pickup method
JP2013065628A (en) * 2011-09-15 2013-04-11 Hitachi High-Tech Instruments Co Ltd Die bonder and die pickup device and die pickup method
JP6349496B2 (en) * 2014-02-24 2018-07-04 株式会社新川 Semiconductor die pickup apparatus and pickup method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002295A (en) * 2004-08-12 2007-07-18 应用材料有限公司 Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process
CN102693930A (en) * 2011-03-23 2012-09-26 株式会社日立高新技术仪器 Pick-up method of die bonder and die bonder
CN103560093A (en) * 2012-05-11 2014-02-05 韩美半导体株式会社 Flip chip bonding apparatus
WO2015129105A1 (en) * 2014-02-26 2015-09-03 株式会社新川 Pickup device and pickup method for semiconductor die
CN106030776A (en) * 2014-02-26 2016-10-12 株式会社新川 Pickup device and pickup method for semiconductor die
JP2016072381A (en) * 2014-09-29 2016-05-09 ファスフォードテクノロジ株式会社 Semiconductor or electronic component mounting device and semiconductor or electronic component mounting method
JP5888455B1 (en) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 Semiconductor manufacturing apparatus and semiconductor chip manufacturing method

Also Published As

Publication number Publication date
TWI745710B (en) 2021-11-11
JPWO2020009243A1 (en) 2021-02-15
CN112368817B (en) 2024-03-12
SG11202012864QA (en) 2021-01-28
KR102424153B1 (en) 2022-07-25
WO2020009243A1 (en) 2020-01-09
TW202006836A (en) 2020-02-01
JP6883369B2 (en) 2021-06-09
KR20200124735A (en) 2020-11-03

Similar Documents

Publication Publication Date Title
CN112368817B (en) Pick-up system for semiconductor die
JP5888455B1 (en) Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JP4816654B2 (en) Chip peeling device, chip peeling method, and chip pickup device
JPH088292B2 (en) Chip mounting device
CN112368818B (en) Pick-up system for semiconductor die
CN104246999B (en) Wafer map verification of data system and wafer map verification of data method
CN108807230B (en) Method for accurately calibrating working position of suction head of sorting machine
JP7408455B2 (en) Die bonding equipment and semiconductor device manufacturing method
CN210325719U (en) Crystal grain sorting mechanism
JP5888463B1 (en) Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JP5924446B1 (en) Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JP5888464B1 (en) Semiconductor manufacturing apparatus and semiconductor chip manufacturing method
JPH0376139A (en) Upward pushing movement of semiconductor element
US20230120615A1 (en) Semiconductor Manufacturing Apparatus and Manufacturing Method for Semiconductor Device
JP4389868B2 (en) Chip mounting apparatus and chip mounting method
JP2003332363A (en) Bonding apparatus and method for manufacturing semiconductor device
JP2024129751A (en) Semiconductor manufacturing apparatus, push-up unit, and method for manufacturing semiconductor device
JP2024085338A (en) Semiconductor manufacturing apparatus, tool mounting method, and manufacturing method of semiconductor device
JP2002124525A (en) Semiconductor chip separating device and method therefor
JPH04148547A (en) Method for pickup of semiconductor pellet
KR20040081531A (en) Method for setting up pick up coordinates for sorter equipment used in assembling semiconductor device
CN106897073A (en) Display methods and device
JPH02177448A (en) Method of lighting semiconductor chip

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant