CN1123465A - 构成半导体器件栅极的方法 - Google Patents

构成半导体器件栅极的方法 Download PDF

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Publication number
CN1123465A
CN1123465A CN95115891A CN95115891A CN1123465A CN 1123465 A CN1123465 A CN 1123465A CN 95115891 A CN95115891 A CN 95115891A CN 95115891 A CN95115891 A CN 95115891A CN 1123465 A CN1123465 A CN 1123465A
Authority
CN
China
Prior art keywords
tin
grid
semiconductor device
tin layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95115891A
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English (en)
Chinese (zh)
Inventor
白忠烈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1123465A publication Critical patent/CN1123465A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN95115891A 1994-08-18 1995-08-18 构成半导体器件栅极的方法 Pending CN1123465A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940020433A KR960009013A (ko) 1994-08-18 1994-08-18 타이타늄 나이트라이드(TiN) 게이트전극 형성방법
KR20433/94 1994-08-18

Publications (1)

Publication Number Publication Date
CN1123465A true CN1123465A (zh) 1996-05-29

Family

ID=19390663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95115891A Pending CN1123465A (zh) 1994-08-18 1995-08-18 构成半导体器件栅极的方法

Country Status (5)

Country Link
EP (1) EP0697714A1 (enExample)
JP (1) JPH08116057A (enExample)
KR (1) KR960009013A (enExample)
CN (1) CN1123465A (enExample)
TW (1) TW271500B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670668B2 (en) 1998-08-31 2003-12-30 Infineon Technologies Ag Microelectronic structure, method for fabricating it and its use in a memory cell
US7456430B1 (en) 1999-04-12 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9503631D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A method for producing a semiconductor device comprising an implantation step
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step
US6084279A (en) * 1997-03-31 2000-07-04 Motorola Inc. Semiconductor device having a metal containing layer overlying a gate dielectric
SE9704150D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd Semiconductor device of SiC with insulating layer a refractory metal nitride layer
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
KR100345364B1 (ko) * 1998-12-28 2002-09-18 주식회사 하이닉스반도체 반도체 소자의 게이트전극 형성방법
KR100364810B1 (ko) * 2000-02-22 2002-12-16 주식회사 하이닉스반도체 반도체소자의 제조방법
FR2977367A1 (fr) 2011-06-30 2013-01-04 St Microelectronics Crolles 2 Transistors dont la grille comprend une couche de nitrure de titane et procede de depot de cette couche
JP5220904B2 (ja) * 2011-08-05 2013-06-26 シャープ株式会社 ＧａＮ系化合物半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670668B2 (en) 1998-08-31 2003-12-30 Infineon Technologies Ag Microelectronic structure, method for fabricating it and its use in a memory cell
US7456430B1 (en) 1999-04-12 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7855380B2 (en) 1999-04-12 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US8071981B2 (en) 1999-04-12 2011-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US8129721B2 (en) 1999-04-12 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
CN1870293B (zh) * 1999-04-12 2013-01-16 株式会社半导体能源研究所 半导体器件及其制造方法
US8866143B2 (en) 1999-04-12 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
KR960009013A (ko) 1996-03-22
JPH08116057A (ja) 1996-05-07
EP0697714A1 (en) 1996-02-21
TW271500B (enExample) 1996-03-01

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