CN112331566A - 引线框架表面粗糙度的制造设备及制造方法 - Google Patents
引线框架表面粗糙度的制造设备及制造方法 Download PDFInfo
- Publication number
- CN112331566A CN112331566A CN202011204117.3A CN202011204117A CN112331566A CN 112331566 A CN112331566 A CN 112331566A CN 202011204117 A CN202011204117 A CN 202011204117A CN 112331566 A CN112331566 A CN 112331566A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- pulse
- surface roughness
- electrolytic copper
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003746 surface roughness Effects 0.000 title claims abstract description 177
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 119
- 239000000463 material Substances 0.000 claims abstract description 236
- 239000010949 copper Substances 0.000 claims abstract description 177
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 171
- 229910052802 copper Inorganic materials 0.000 claims abstract description 170
- 238000000034 method Methods 0.000 claims abstract description 98
- 230000008569 process Effects 0.000 claims abstract description 69
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 29
- 238000005516 engineering process Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 25
- 239000003814 drug Substances 0.000 claims description 23
- 238000007599 discharging Methods 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 11
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- 239000002253 acid Substances 0.000 claims description 8
- 238000005238 degreasing Methods 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 description 46
- 239000010410 layer Substances 0.000 description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 229910052759 nickel Inorganic materials 0.000 description 16
- 239000005022 packaging material Substances 0.000 description 15
- 238000004381 surface treatment Methods 0.000 description 15
- 238000007731 hot pressing Methods 0.000 description 14
- 230000007547 defect Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229910000510 noble metal Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
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- 230000001070 adhesive effect Effects 0.000 description 5
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
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- 239000000956 alloy Substances 0.000 description 4
- 239000010405 anode material Substances 0.000 description 4
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- 239000004519 grease Substances 0.000 description 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 238000012858 packaging process Methods 0.000 description 1
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- 239000003566 sealing material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4835—Cleaning, e.g. removing of solder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011204117.3A CN112331566B (zh) | 2020-11-02 | 2020-11-02 | 引线框架表面粗糙度的制造设备及制造方法 |
JP2022519585A JP2022547336A (ja) | 2020-11-02 | 2021-10-18 | リードフレーム表面粗化度の製造設備及び製造方法 |
PCT/CN2021/124340 WO2022089232A1 (zh) | 2020-11-02 | 2021-10-18 | 引线框架表面粗糙度的制造设备及制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011204117.3A CN112331566B (zh) | 2020-11-02 | 2020-11-02 | 引线框架表面粗糙度的制造设备及制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112331566A true CN112331566A (zh) | 2021-02-05 |
CN112331566B CN112331566B (zh) | 2024-09-27 |
Family
ID=74324378
Family Applications (1)
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CN202011204117.3A Active CN112331566B (zh) | 2020-11-02 | 2020-11-02 | 引线框架表面粗糙度的制造设备及制造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2022547336A (ja) |
CN (1) | CN112331566B (ja) |
WO (1) | WO2022089232A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114171487A (zh) * | 2021-12-06 | 2022-03-11 | 天水华洋电子科技股份有限公司 | 一种用于集成电路引线框架表面处理装置 |
WO2022089232A1 (zh) * | 2020-11-02 | 2022-05-05 | 昆山一鼎工业科技有限公司 | 引线框架表面粗糙度的制造设备及制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0832005A (ja) * | 1994-07-12 | 1996-02-02 | Sony Corp | リードフレームのめっき装置 |
US20060189037A1 (en) * | 2005-02-18 | 2006-08-24 | Texas Instruments Incorporated | Low cost method to produce high volume lead frames |
CN109468670A (zh) * | 2018-11-16 | 2019-03-15 | 中山品高电子材料有限公司 | 引线框架电镀铜层的方法 |
CN109989083A (zh) * | 2019-04-28 | 2019-07-09 | 天水华洋电子科技股份有限公司 | 一种超粗化引线框架电镀预处理工艺 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6558231B1 (en) * | 2000-10-17 | 2003-05-06 | Faraday Technology Marketing Goup, Llc | Sequential electromachining and electropolishing of metals and the like using modulated electric fields |
JP4981488B2 (ja) * | 2007-03-09 | 2012-07-18 | 古河電気工業株式会社 | 粗化圧延銅板およびその製造方法 |
JP6093646B2 (ja) * | 2013-05-14 | 2017-03-08 | 新光電気工業株式会社 | めっき膜の製造方法 |
JP7119574B2 (ja) * | 2018-05-25 | 2022-08-17 | 三菱マテリアル株式会社 | リードフレーム及びその製造方法 |
CN111304700A (zh) * | 2020-03-26 | 2020-06-19 | 深圳市惟华电子科技有限公司 | 一种逆向铜箔的制备方法 |
CN112331566B (zh) * | 2020-11-02 | 2024-09-27 | 昆山一鼎工业科技有限公司 | 引线框架表面粗糙度的制造设备及制造方法 |
-
2020
- 2020-11-02 CN CN202011204117.3A patent/CN112331566B/zh active Active
-
2021
- 2021-10-18 JP JP2022519585A patent/JP2022547336A/ja active Pending
- 2021-10-18 WO PCT/CN2021/124340 patent/WO2022089232A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0832005A (ja) * | 1994-07-12 | 1996-02-02 | Sony Corp | リードフレームのめっき装置 |
US20060189037A1 (en) * | 2005-02-18 | 2006-08-24 | Texas Instruments Incorporated | Low cost method to produce high volume lead frames |
CN109468670A (zh) * | 2018-11-16 | 2019-03-15 | 中山品高电子材料有限公司 | 引线框架电镀铜层的方法 |
CN109989083A (zh) * | 2019-04-28 | 2019-07-09 | 天水华洋电子科技股份有限公司 | 一种超粗化引线框架电镀预处理工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022089232A1 (zh) * | 2020-11-02 | 2022-05-05 | 昆山一鼎工业科技有限公司 | 引线框架表面粗糙度的制造设备及制造方法 |
CN114171487A (zh) * | 2021-12-06 | 2022-03-11 | 天水华洋电子科技股份有限公司 | 一种用于集成电路引线框架表面处理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN112331566B (zh) | 2024-09-27 |
WO2022089232A1 (zh) | 2022-05-05 |
JP2022547336A (ja) | 2022-11-11 |
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