475224 A7 B7 五、發明説明（） (請先、閱讀背面之注意事項再4+頁) 本發明是有關於一種半導體積體電路之金屬內連線的 製造方法，且特別是有關於一種在以電化學方法進行電鍍 金屬時附著在晶圓表面的氣泡之去除方法。 背i 隨著積體電路元件的高度積集化，元件的尺寸逐漸縮 小’其單位面積所需的金屬內連線數目也隨之而增加。然 而，尺寸的縮小以及金屬內連線數目的增加，將使得製程 的困難度增加，特別是如何提供良率佳又可靠度好的金屬 內連線製程上。因此，如何使超大型積體電路的內連線， 在極小的接觸面積下，仍具有良好的導電性質與操作效 能，是目前半導體工業所積極努力的方向。 經濟部智慧財產局員工消費合作社印製 因爲銅金屬之低電阻、高抗電遷移性以及可以攜帶高 密度電流之良好特性，目前對於使用銅金屬來做爲半導體 積體電路之內連線的興趣就越來越高，尤其是對半導體元 件後段(backend)製程而言。因此銅金屬在深次微米元件之 多層金屬內連線的運用上備受矚目。 目前電鍍法（electroplating)爲在晶圓上形成銅金屬之 圭瘦方法，再搭配鑲嵌或雙重鑲嵌（dual damascene)製程， 可應用於多層金屬內連線的製造上。 一般用來電鍍銅金屬裝置的簡單示意圖如第1圖所 示。晶圓100爲陰極，置於電解槽120之上方。電解槽120 2 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 475224 A 7 B7 五、發明説明（ 之下端有過濾器140,用於去除微粒，防止污染晶圓100 的表面。譚金屬板13〇爲曝;極，置於過濾器13〇之下方。 電解液係由電解槽120下方入口 150進入電解槽120內， 再從晶圓100周緣出口 160流出來，以求電解槽120內之 銅離子與添加物的濃度能夠保持一個定値。 f 爲了避免晶圓表面所電鍍出來之銅金屬厚度不均，iML $此晶圓100必須水平放置，以和銅金屬板130平行，使晶 圓100表面之每一點和銅離子源(亦即銅金屬板130)之距 離相等，以求晶圓1〇〇表面每一點之銅離子濃度相同，使 晶圓100表面每一點之銅離子的沈積速率相同。但是在電 解過程中，因爲在電化學反應過程中會產生一些無法避免 之氣泡，這些氣泡常附著在晶圚之表面，影響電鍍品質， 這對深次微米的金屬內連線製程的影響十分大，會使良率 大幅下降。 丨 (請先1閲讀背面之注意事項再 聋. 經濟部智慧財產局員工消費合作社印製 發明目的與槪沭 因此本發明的主要目的就是在提供一種電鍍金屬時附 著在晶圓表面的氣泡之去除方法。 本發明之另一目的是在提供一種沒有氣泡附著在晶圓 表面之金屬電鍍的方法。 本發明的又一目的是在提供一種增加隹凰電鍍歷之JS 度均勻度的方法。 根據本發明之上述目的，提出一種電鍍金屬時附著在475224 A7 B7 V. Description of the invention () (please read the precautions on the back and then 4+ pages) This invention relates to a method for manufacturing metal interconnects of semiconductor integrated circuits, and in particular to a The electrochemical method is a method for removing bubbles attached to the surface of a wafer during metal plating. As the height of the integrated circuit components is increased, the size of the components is gradually reduced, and the number of metal interconnects required per unit area is also increased. However, the reduction in size and the increase in the number of metal interconnects will increase the difficulty of the process, especially how to provide metal interconnects with good yields and high reliability. Therefore, how to make the inner wiring of a very large integrated circuit have good conductive properties and operating efficiency under a very small contact area is the current active direction of the semiconductor industry. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs because of the low resistance of copper metal, high resistance to electromigration, and the good characteristics of carrying high density current, there is currently interest in using copper metal for the interconnection of semiconductor integrated circuits It is getting higher and higher, especially for semiconductor device backend processes. Therefore, copper metal has attracted much attention in the application of multilayer metal interconnects for deep sub-micron components. At present, electroplating is a thin method of forming copper metal on a wafer, and it can be applied to the manufacture of multilayer metal interconnects with a damascene or dual damascene process. A simple schematic diagram of a device commonly used to plate copper metal is shown in Figure 1. The wafer 100 is a cathode and is disposed above the electrolytic cell 120. Electrolytic cell 120 2 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 475224 A 7 B7 V. Description of the invention (the lower end is equipped with a filter 140 to remove particles and prevent the surface of wafer 100 from being contaminated. Tan metal plate 13 is exposed; the electrode is placed below the filter 13. The electrolyte enters the electrolytic cell 120 from the inlet 150 below the electrolytic cell 120, and then flows out from the peripheral exit 160 of the wafer 100 to obtain the electrolytic cell. The concentration of copper ions and additives in 120 can be kept constant. F In order to avoid the uneven thickness of the copper metal plated on the wafer surface, iML $ This wafer 100 must be placed horizontally, parallel to the copper metal plate 130, so that the crystal The distance between each point on the surface of the circle 100 and the copper ion source (ie, the copper metal plate 130) is equal, so that the concentration of copper ions at each point on the surface of the wafer 100 is the same, so that the copper ion deposition rate at each point on the surface of the wafer 100 The same. But in the electrolysis process, because some unavoidable air bubbles will be generated during the electrochemical reaction, these air bubbles often adhere to the surface of the crystal cymbals and affect the quality of electroplating. The impact of the interconnection process is very large, which will greatly reduce the yield. 丨 (Please read the precautions on the back before deafness. The purpose of the invention printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and the main reason for this invention The purpose is to provide a method for removing air bubbles attached to the surface of a wafer when metal plating is performed. Another object of the present invention is to provide a method of metal plating without air bubbles attached to the surface of a wafer. Provided is a method for increasing the uniformity of the JS degree of the electroplating calendar. According to the above object of the present invention, a method for adhering to
I 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 475224 A7 B7 五、發明説明（ 經濟部智慧財產局員工消費合作社印製 晶圓表面的氣泡之去除方法，可應用於金屬電鍍裝置上。 此金屬電鑛裝置至少具有一個電解槽與提供金屬離子源之 一塊陽極金屬板置於電解槽之下端，電解槽內之電解液係 由下往上流動。此方法包括將一片晶圚置於電解槽之上端 做爲陰極，此晶圓的方向和陽極金屬板平行之方向的偏離^ 程度足麗過程中所生之氣泡無法附著在晶圓的表面 ^旨維沒晶圓表面電鍍層厚度的均勻度。 本發明還提出一種增加金屬電鍍層之厚度均勻度的方 法’可應用於金屬電鍍裝置上。此金屬電鍍裝置至少具有 一個電解槽與提供金屬離子源之一塊陽極金屬板置於電解 槽之下端，電解槽內之電解液係由下往上流動。此方法包 括將一片晶圓置於電解槽之上端做爲陰極，此晶圓的方向 和陽極金屬板平行之方向的偏離程度約度至20度。 依照本發明的方法，可去除電解過程中所產生的氣 泡’使晶圓表面所得之電鍍金屬層 圖式之簡蜇設昍 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 第1圖是習知之用來電鍍銅金屬之裝置的簡單示意 請 κ 閲 讀 背 意 事 項 裝 訂 線 圖 本紙張尺度適用中國國家標準（CNS ) Μ規格（2丨〇><297公嫠） 475224 A7 B7 五、發明説明（） 裝-- (請先，閲讀背面之注意事項再頁) 第2圖是繪示依照本發明一較佳實施例的一種電鍍金 屬時附著在晶圓表面的氣泡之去除方法之簡單示意圖。 圖式之標記說明 100、200 :晶圓 120、220 :電解槽 130 :銅金屬板 140、240 :過濾器 150、250 :入口 160、260 :出口 230 :陽極金屬板 發明之詳細說里· 線 請參照第2圖’其繪示依照本發明一較佳實施例的一 種電鍍金屬時附著在晶圓表面的氣泡之去除方法之簡單示 意圖。 經濟部智慧財產局員工消費合作社印製 晶圓200爲陰極，置於電解槽220之上方。電解槽220 之下端有過濾器240 ’用於去除微粒’防止污染晶圓200 的表面。陽極金屬板230爲陽極’置於過濾器230之下方。 電解液係由電解槽220下方入口 250進入電解槽220內’ 再從晶圓2〇〇周緣出口 260流出來’以使電解槽220內之 金屬離子與所需添加物的濃度能夠保持一個定値。 但是晶圓200的方向和陽極金屬板23〇之平行方向略 5 本紙張尺度適用中國國家梯準（CNS ) A4規格（210x297公釐） 475224 A7 ____B7_ 五、發明説明（） 微偏離，例如約爲3度至20度，如此可藉由電解液由下 往上之流動來將電解過程中所產生的氣泡帶走，以提高晶 圓200表面電鍍金屬之品質。另外還可同時使晶圓200繞 著晶圓表面之法線旋轉，使電解液中之金屬離子在晶圓200 表面之沈積速率更爲均勻，並使金屬離子之沈積速率不受 金屬離子擴散速率之限制。 (請先♦閲讀背面之注意事項再頁) •裝· 經濟部智慧財產局員工消費合作社印製 二：電鍍金屬時，晶圓稍微傾斜放置（本發明)與晶圓水 平放置(習知）之電鍍實驗結果比較。表中所列數據爲5組 實驗的平均値。 晶圓稍微傾斜放置 晶圓水平放置 氣泡 晶圓表面沒有氣泡 晶圓表面有一些氣泡 鍍金屬速率 2200埃/分鐘 2200埃/分鐘 金屬鍍層厚 度之均勻度 (%，1 sigma) 1.7 % 2.1 % 晶圓表面之 微粒數 <50 <50 表一是用銅金屬所得的實驗結果。由表一可知，晶圓 稍微傾斜放置時，的確可以將晶圓表面所附著的氣、泡去除 掉，而且其電鍍金屬層厚度之均勻度不僅沒有變差，反而 養·.夏..ii(金屬厚度統計結果之標準偏差爲1·7 %，比習(知方 6 — — 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） " " ,ιτ -線 475224 Α7 Β7 五、發明説明（ 法之金屬厚度統計結果之標準偏差爲2·1 %要好）。因此 原先爲了顧慮電鍍金屬層之厚度均勻度而認爲晶圓一定要 和陽極金屬板平行，其實量不然的。 由上述本發明較佳實施例可知，應用本發明具有可完 全去除晶圓表面所附著的氣泡以及增加晶圓表面電鍍金屬 層的厚度均勻度之優點。而且在電鍍過程中，一直保持晶 圓表面逸直4進胤著，可大幅增加電鍍金屬層之原子堆積 .................. … - ... 時之規則性’使晶格缺陷降至最低，提升電鍍金屬層之品 質，也就可使積體電路之金屬內連線的良率太蝠提.高。如 此可節省大量製造廠之资質及時間的生產成本。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內’當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先♦閱讀背面之注意事項再頁) •裝· 、1Τ 線 經濟部智慧財產局員工消費合作社印製 7 本紙張尺度適用中國國家標準（CNS ) A4胁（21〇Χ297公瘦）I This paper size applies Chinese National Standard (CNS) A4 (210X 297 mm) 475224 A7 B7 V. Description of the invention (Removal method of air bubbles on the surface of printed wafers printed by employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, applicable to metals On the electroplating device. The metal power mining device has at least one electrolytic cell and an anode metal plate that provides a metal ion source at the lower end of the electrolytic cell. The electrolyte in the electrolytic cell flows from bottom to top. This method includes placing a piece of crystal圚 It is placed on the upper end of the electrolytic cell as the cathode, and the direction of the wafer deviates from the direction parallel to the anode metal plate. ^ To the extent that bubbles generated during the Ashika process cannot adhere to the surface of the wafer. The thickness uniformity of the layer. The present invention also provides a method for increasing the thickness uniformity of the metal plating layer, which can be applied to a metal plating device. The metal plating device has at least one electrolytic cell and an anode metal plate provided with a metal ion source. At the lower end of the electrolytic cell, the electrolyte in the electrolytic cell flows from bottom to top. This method includes placing a wafer in the electrolytic cell. The upper end is used as the cathode, and the deviation between the direction of the wafer and the direction parallel to the anode metal plate is about 20 degrees. According to the method of the present invention, the air bubbles generated during the electrolysis process can be removed and the plated metal obtained on the wafer surface can be removed. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail with the accompanying drawings, as follows: Figure 1 is a simple illustration of a conventional device for electroplating copper metal. Please read the glyph drawing of the note. The paper size is applicable to the Chinese National Standard (CNS) M specification (2 丨 〇 > < 297g) 475224 A7 B7 V. Description of the invention () Installation-(Please read the precautions on the back and then the next page) Figure 2 shows the removal of air bubbles attached to the surface of the wafer when a metal is plated according to a preferred embodiment of the present invention A simple schematic diagram of the method. Symbols of the drawings: 100, 200: wafer 120, 220: electrolytic cell 130: copper metal plate 140, 240: filter 150, 250: inlet 160, 260: outlet 230: anode metal plate invention In detail, please refer to FIG. 2 ', which shows a simple schematic diagram of a method for removing air bubbles attached to the surface of a wafer during metal plating according to a preferred embodiment of the present invention. The wafer 200 is a cathode and is placed above the electrolytic cell 220. A filter 240 is used at the lower end of the electrolytic cell 220 to remove particles to prevent contamination of the surface of the wafer 200. The anode metal plate 230 is an anode and is placed in the filter 230 The electrolyte enters the electrolytic cell 220 from the inlet 250 below the electrolytic cell 220 and then flows out from the peripheral exit 260 of the wafer 2000 so that the concentration of the metal ions and the required additives in the electrolytic cell 220 can be maintained. A fixation. However, the direction of the wafer 200 and the parallel direction of the anode metal plate 23 are slightly 5 This paper size is applicable to the Chinese National Standard (CNS) A4 size (210x297 mm) 475224 A7 ____B7_ V. Description of the invention () Slight deviation, for example, about 3 degrees to 20 degrees, so that the bubbles generated in the electrolysis process can be taken away by the electrolyte flowing from bottom to top to improve the quality of the electroplated metal on the surface of the wafer 200. In addition, the wafer 200 can be rotated around the normal of the wafer surface at the same time, so that the deposition rate of the metal ions in the electrolyte on the surface of the wafer 200 is more uniform, and the deposition rate of the metal ions is not affected by the metal ion diffusion rate. Restrictions. (Please read the precautions on the back of the page first) • Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs II: When plating metal, the wafers are placed slightly at an angle (the present invention) and the wafers are placed horizontally (the habit) Comparison of results of plating experiments. The data listed in the table are the average 値 of 5 experiments. Wafer slightly tilted Wafer placed horizontally Bubbles Wafer surface No bubbles Bubbles on the wafer surface Metal plating rate 2200 Angstroms / minute 2200 Angstroms / minute Uniformity of metal coating thickness (%, 1 sigma) 1.7% 2.1% Wafer Number of fine particles on the surface < 50 < 50 Table 1 shows the experimental results obtained using copper metal. As can be seen from Table 1, when the wafer is placed at a slight tilt, the gas and bubbles attached to the surface of the wafer can indeed be removed, and the uniformity of the thickness of the electroplated metal layer is not deteriorated, but it is supported by Xia..ii ( The standard deviation of the statistical result of the metal thickness is 1.7%, compared to the standard (Knowing side 6 — — This paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) " ", ιτ -line 475224 Α7 Β7 five 2. Description of the invention (The standard deviation of the statistical result of the metal thickness of the method is 2.1%.) Therefore, in order to consider the thickness uniformity of the electroplated metal layer, the wafer must be parallel to the anode metal plate, but the amount is not the same. It can be known from the foregoing preferred embodiments of the present invention that the application of the present invention has the advantages of completely removing bubbles attached to the wafer surface and increasing the thickness uniformity of the plating metal layer on the wafer surface. Moreover, the wafer surface is always maintained during the plating process. Easy straight 4 can be used to significantly increase the atomic stacking of the electroplated metal layer....... Minimal, lift electroplated metal The quality can also improve the yield of the metal interconnects of the integrated circuit. It can save the qualification and time production costs of a large number of manufacturing plants. Although the present invention has been disclosed as above with a preferred embodiment However, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be regarded as the scope of patent application attached to it. (Please read the precautions on the back first and then the page) • Equipment, 1T Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 7 This paper is in accordance with China National Standard (CNS) A4 threat (21〇 (X297 male thin)