CN112234016B - 一种晶圆厚膜金属层、pad金属图案的制作工艺 - Google Patents

一种晶圆厚膜金属层、pad金属图案的制作工艺 Download PDF

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CN112234016B
CN112234016B CN202011119885.9A CN202011119885A CN112234016B CN 112234016 B CN112234016 B CN 112234016B CN 202011119885 A CN202011119885 A CN 202011119885A CN 112234016 B CN112234016 B CN 112234016B
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严立巍
符德荣
文锺
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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Abstract

本发明公开一种晶圆厚膜金属层、PAD金属图案的制作工艺,包括以下步骤:S1、将晶圆正面键合玻璃载板,晶圆背面减薄,并进行微影工艺及离子注入等工艺;S2、对玻璃载板进行开窗;S3、在玻璃载板的窗口处进行晶圆正面的厚膜金属连线及PAD光刻及蚀刻的加工;S4、玻璃载板解键合,清洗移除黏着层;S5、切割切断超薄晶圆及切割道上残留的金属,完成制作晶圆的厚膜金属连线、PAD金属图案。本发明以镭射及蚀刻结合在玻璃载板上加工开窗,可在最薄厚度为30‑35um的晶圆上制作5‑25um厚的金属连线、PAD金属图案。

Description

一种晶圆厚膜金属层、PAD金属图案的制作工艺
技术领域
本发明涉及半导体领域,具体的是一种晶圆厚膜金属层、PAD金属图案的制作工艺。
背景技术
铝是仅次于银、铜以及金的第四佳电传导金属,不仅能满足金属化低电阻的要求,而且与二氧化硅之间具有良好的附着力,并且铝极易进行干式刻蚀而形成微型金属连线,因此,在IC制造中,铝金属常被作为连线使用,藉以安排数千或数百万建立在晶圆表面上的微型电晶体。
目前,高功率元件及IC为达成大电流及电压的工作需求,常须采用厚Al或Al/Cu合金做连线及连结封装Wire bonding的PAD,但连线结构由于厚度所产生的高段差不利于后续的Bonding工程,并且不利于超薄晶圆背面的研磨加工。
发明内容
为解决上述背景技术中提到的不足,本发明的目的在于提供一种晶圆厚膜金属层、PAD金属图案的制作工艺,本发明以镭射及蚀刻结合在玻璃载板上加工开窗,可在最薄厚度为30-35um的晶圆上制作5-20um厚的金属连线、PAD金属图案。
本发明的目的可以通过以下技术方案实现:
一种晶圆厚膜金属层、PAD金属图案的制作工艺,包括以下步骤:
S1、将晶圆正面键合玻璃载板,对晶圆背面研磨减薄,然后在晶圆背面进行微影工艺及离子注入等工艺;
S2、采用飞秒激光结合湿蚀刻对玻璃载板进行开窗;
S3、在玻璃载板的窗口处进行晶圆正面的厚膜金属连线及PAD光刻及蚀刻的加工;
S4、将晶圆背面贴附在切割膜框上,以镭射、UV或加热法解键合后移除玻璃载板,并清洗移除黏着层;
S5、以金刚石锯或镭射切割切断超薄晶圆及切割道上残留的金属,完成制作晶圆的厚膜金属连线、PAD金属图案。
优选地,步骤S1中晶圆背面研磨减薄后晶圆厚度为30-35um。
优选地,步骤S2中玻璃载板开窗方法包括下述两种方案:
方案一:玻璃载板键合晶圆前采用飞秒激光加工开窗区域的周边,玻璃载板键合晶圆后采用HF蚀刻该区域形成环形蚀刻孔洞,通过镭射对中间区域孤岛玻璃进行解键合,然后通过水流将中间孤岛玻璃剥离,最后使用O2 Plasma电浆蚀刻开窗部位黏着层完成玻璃载板开窗;
方案二:玻璃载板键合晶圆前先将玻璃载板的中央区域减薄形成周边厚而中间大部区域薄的环状支撑型玻璃载板,玻璃载板键合晶圆后采用光刻或飞秒激光方式完成开窗的图案,再用HF湿蚀刻法去除开窗部位的玻璃,最后使用O2Plasma去除开窗部位的黏着层完成玻璃载板开窗。
优选地,方案二中玻璃载板中间区域玻璃减薄至100-200um。
优选地,步骤S3中厚膜金属连线、PAD的厚度为5-20um。
本发明的有益效果:
本发明克服了由于厚Interconnect/PAD工艺在研磨刻蚀减薄晶圆之后,无高段差会造成Bonding工程的挑战及研磨减薄限制,可达最薄的晶圆厚度30-35um。
2.本发明背面玻璃载板以镭射及蚀刻结合加工开窗,再制作金属图案,可在最薄厚度为30-35um的晶圆上制作5-20um厚的金属连线、PAD金属图案。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明实施例1步骤S1的工艺示意图;
图2是本发明实施例1步骤S2的工艺示意图;
图3是本发明实施例1步骤S3的工艺示意图;
图4是本发明实施例1步骤S4的工艺示意图;
图5是本发明实施例2步骤S1的工艺示意图;
图6是本发明实施例2步骤S2的工艺示意图;
图7是本发明实施例2步骤S3的工艺示意图;
图8是本发明实施例2步骤S4的工艺示意图。
图中:
1-玻璃载板,2-激光扫描区,3-晶圆,4-黏着层,5-孤岛区域玻璃,6-玻璃载板窗口,7-厚膜金属连线、PAD,8-切割膜框。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的组件或元件必须具有特定的方位,以特定的方位构造和操作,因此不能理解为对本发明的限制。
实施例1
如图1-4所示,一种晶圆厚膜金属层、PAD金属图案的制作工艺,包括以下步骤:
S1、玻璃载板采用飞秒激光加工开窗区域的周边,将晶圆正面键合玻璃载板,然后采用HF蚀刻该区域形成环形蚀刻孔洞,通过镭射对中间区域孤岛玻璃进行解键合,然后将中央独立区域玻璃剥离,最后使用O2 Plasma电浆蚀刻开窗部位黏着层完成玻璃载板开窗;
S2、对晶圆背面研磨减薄至30um,然后在晶圆背面进行微影工艺及离子注入等工艺;
S3、在玻璃载板的窗口处进行晶圆正面的厚膜金属层连线及PAD光刻及蚀刻的加工,厚膜金属连线、PAD厚度为10um;
S4、将晶圆背面贴附在切割膜框上,以镭射、UV或加热法解键合后移除玻璃载板,并清洗移除黏着层;
S5、以金刚石锯或镭射切割切断超薄晶圆及切割道上残留的金属,完成制作晶圆的厚膜金属连线PAD金属图案。
实施例2
如图5-8所示,一种晶圆厚膜金属层、PAD金属图案的制作工艺,包括以下步骤:
S1、先将玻璃载板的中央区域减薄至150um,形成周边厚而中间大部区域薄的环状支撑型玻璃载板,再将晶圆正面键合玻璃载板,玻璃载板键合晶圆后采用光刻或飞秒激光方式完成开窗的图案,再用HF湿蚀刻法去除开窗部位的玻璃,最后使用O2 Plasma去除开窗部位的黏着层完成玻璃载板开窗;
S2、对晶圆背面研磨减薄至35um,然后在晶圆背面进行微影工艺及离子注入等工艺;
S3、在玻璃载板的窗口处进行晶圆正面的厚膜金属层连线及PAD光刻及蚀刻的加工,厚膜金属连线、PAD厚度为15um;
S4、将晶圆背面贴附在切割膜框上,以镭射、UV或加热法解键合后移除玻璃载板,并清洗移除黏着层;
S5、以金刚石锯或镭射切割切断超薄晶圆及切割道上残留的金属,完成制作晶圆的厚膜金属连线PAD金属图案。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。

Claims (4)

1.一种晶圆厚膜金属层、PAD金属图案的制作工艺,其特征在于,包括以下步骤:
S1、将晶圆正面键合玻璃载板,对晶圆背面研磨减薄,然后在晶圆背面进行微影工艺及离子注入工艺;
S2、采用飞秒激光结合湿蚀刻对玻璃载板进行开窗;
S3、在玻璃载板的窗口处进行晶圆正面的厚膜金属连线及PAD光刻及蚀刻的加工;
S4、将晶圆背面贴附在切割膜框上,以镭射、UV或加热法解键合后移除玻璃载板,并清洗移除黏着层;
S5、以金刚石锯或镭射切割切断超薄晶圆及切割道上残留的金属,完成制作晶圆的厚膜金属连线、PAD金属图案;
所述步骤S2中玻璃载板开窗方法包括下述两种方案:
方案一:玻璃载板键合晶圆前采用飞秒激光加工开窗区域的周边,玻璃载板键合晶圆后采用HF蚀刻该区域形成环形蚀刻孔洞,通过镭射对中间区域孤岛玻璃进行解键合,然后通过水流将中间孤岛玻璃剥离,最后使用O2Plasma电浆蚀刻开窗部位黏着层完成玻璃载板开窗;
方案二:玻璃载板键合晶圆前先将玻璃载板的中央区域减薄形成周边厚而中间大部区域薄的环状支撑型玻璃载板,玻璃载板键合晶圆后采用光刻或飞秒激光方式完成开窗的图案,再用HF湿蚀刻法去除开窗部位的玻璃,最后使用O2Plasma去除开窗部位的黏着层完成玻璃载板开窗。
2.根据权利要求1所述的晶圆厚膜金属层、PAD金属图案的制作工艺,其特征在于,所述步骤S1中晶圆背面研磨减薄后晶圆厚度为30-35um。
3.根据权利要求1所述晶圆厚膜金属层、PAD金属图案的制作工艺,其特征在于,所述方案二中玻璃载板中间区域玻璃减薄至100-200um。
4.根据权利要求1所述的晶圆厚膜金属层、PAD金属图案的制作工艺,其特征在于,所述步骤S3中厚膜金属连线、PAD的厚度为5-20um。
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CN113380615A (zh) * 2021-06-09 2021-09-10 上海华友金裕微电子有限公司 一种集成电路晶圆背面处理工艺
CN113725160B (zh) * 2021-09-01 2024-06-28 浙江同芯祺科技有限公司 一种超薄晶圆正面切割工艺
CN117912978A (zh) * 2024-03-18 2024-04-19 成都莱普科技股份有限公司 一种快速判断激光解键合界面的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636912A (zh) * 2003-11-18 2005-07-13 精工爱普生株式会社 结构主体的制造方法、液滴排放头和液体排放装置
JP2016049542A (ja) * 2014-08-29 2016-04-11 アイシン精機株式会社 レーザ加工方法、ガラス加工部品の製造方法及びレーザ加工装置
CN106409758A (zh) * 2016-10-09 2017-02-15 华进半导体封装先导技术研发中心有限公司 玻璃通孔金属化制作方法
CN107799429A (zh) * 2016-09-02 2018-03-13 英飞凌科技股份有限公司 用于形成半导体器件的方法以及半导体器件
JP2018158855A (ja) * 2017-03-22 2018-10-11 日本電気硝子株式会社 有孔ガラス基板の製造方法
CN111524819A (zh) * 2020-04-29 2020-08-11 绍兴同芯成集成电路有限公司 一种2.5d、3d封装中的玻璃载板开窗工艺及双面金属化工艺
CN111599743A (zh) * 2020-07-06 2020-08-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5662664B2 (ja) * 2008-12-19 2015-02-04 東京応化工業株式会社 加工基板及びその製造方法
US8202786B2 (en) * 2010-07-15 2012-06-19 Infineon Technologies Austria Ag Method for manufacturing semiconductor devices having a glass substrate
US8865522B2 (en) * 2010-07-15 2014-10-21 Infineon Technologies Austria Ag Method for manufacturing semiconductor devices having a glass substrate
US9117801B2 (en) * 2013-05-15 2015-08-25 Infineon Technologies Ag Semiconductor devices having a glass substrate, and method for manufacturing thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636912A (zh) * 2003-11-18 2005-07-13 精工爱普生株式会社 结构主体的制造方法、液滴排放头和液体排放装置
JP2016049542A (ja) * 2014-08-29 2016-04-11 アイシン精機株式会社 レーザ加工方法、ガラス加工部品の製造方法及びレーザ加工装置
CN107799429A (zh) * 2016-09-02 2018-03-13 英飞凌科技股份有限公司 用于形成半导体器件的方法以及半导体器件
CN106409758A (zh) * 2016-10-09 2017-02-15 华进半导体封装先导技术研发中心有限公司 玻璃通孔金属化制作方法
JP2018158855A (ja) * 2017-03-22 2018-10-11 日本電気硝子株式会社 有孔ガラス基板の製造方法
CN111524819A (zh) * 2020-04-29 2020-08-11 绍兴同芯成集成电路有限公司 一种2.5d、3d封装中的玻璃载板开窗工艺及双面金属化工艺
CN111599743A (zh) * 2020-07-06 2020-08-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法

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