CN1122117C - 带有沉积屏蔽板的等离子体反应器 - Google Patents

带有沉积屏蔽板的等离子体反应器 Download PDF

Info

Publication number
CN1122117C
CN1122117C CN98813357.1A CN98813357A CN1122117C CN 1122117 C CN1122117 C CN 1122117C CN 98813357 A CN98813357 A CN 98813357A CN 1122117 C CN1122117 C CN 1122117C
Authority
CN
China
Prior art keywords
shield
reactor
electrode
wafer
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN98813357.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN1290308A (zh
Inventor
斯蒂芬·P·德奥尼拉斯
罗伯特·A·迪蒂齐奥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CollabRx Inc
Original Assignee
CollabRx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CollabRx Inc filed Critical CollabRx Inc
Publication of CN1290308A publication Critical patent/CN1290308A/zh
Application granted granted Critical
Publication of CN1122117C publication Critical patent/CN1122117C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CN98813357.1A 1997-12-05 1998-12-01 带有沉积屏蔽板的等离子体反应器 Expired - Lifetime CN1122117C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98573097A 1997-12-05 1997-12-05
US08/985,730 1997-12-05

Publications (2)

Publication Number Publication Date
CN1290308A CN1290308A (zh) 2001-04-04
CN1122117C true CN1122117C (zh) 2003-09-24

Family

ID=25531755

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98813357.1A Expired - Lifetime CN1122117C (zh) 1997-12-05 1998-12-01 带有沉积屏蔽板的等离子体反应器

Country Status (7)

Country Link
US (4) US6006694A (enExample)
EP (1) EP1038046A4 (enExample)
JP (2) JP2001526459A (enExample)
KR (1) KR20010032824A (enExample)
CN (1) CN1122117C (enExample)
CA (1) CA2312777A1 (enExample)
WO (1) WO1999029923A1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999010913A1 (en) 1997-08-26 1999-03-04 Applied Materials, Inc. An apparatus and method for allowing a stable power transmission into a plasma processing chamber
CN1122117C (zh) * 1997-12-05 2003-09-24 泰格尔公司 带有沉积屏蔽板的等离子体反应器
US6521081B2 (en) * 1997-12-05 2003-02-18 Tegal Corporation Deposition shield for a plasma reactor
US20060137821A1 (en) * 2004-12-28 2006-06-29 Lam Research Coporation Window protector for sputter etching of metal layers
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP4057198B2 (ja) * 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
US6623595B1 (en) * 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
TW466595B (en) * 2001-02-20 2001-12-01 Macronix Int Co Ltd Reaction chamber of high density plasma chemical vapor deposition
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP3903730B2 (ja) * 2001-04-04 2007-04-11 松下電器産業株式会社 エッチング方法
US7133921B2 (en) * 2001-04-06 2006-11-07 Mks Instruments, Inc. Portable devices for different control interfaces
JP4783524B2 (ja) * 2001-08-06 2011-09-28 株式会社アルバック 巻取り式ドライエッチング方法及び装置
US6666982B2 (en) * 2001-10-22 2003-12-23 Tokyo Electron Limited Protection of dielectric window in inductively coupled plasma generation
US6946054B2 (en) 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
WO2004035795A1 (en) 2002-10-17 2004-04-29 Bioleaders Corporation Vector for anti-hpv vaccine and transformed microorganism by the vector
US6926775B2 (en) 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP2006019414A (ja) * 2004-06-30 2006-01-19 Canon Inc プラズマ処理装置
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
CN100389225C (zh) * 2005-10-21 2008-05-21 友达光电股份有限公司 等离子体反应腔
US20080233016A1 (en) * 2007-03-21 2008-09-25 Verity Instruments, Inc. Multichannel array as window protection
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
WO2009117612A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Shielded lid heater assembly
US20100047594A1 (en) * 2008-08-20 2010-02-25 Aharon Inspektor Equipment and method for physical vapor deposition
TWI498053B (zh) * 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
US8518563B2 (en) * 2010-02-23 2013-08-27 Seagate Technology Llc Covalently bound monolayer for a protective carbon overcoat
US9055653B2 (en) * 2010-04-12 2015-06-09 Sharp Kabushiki Kaisha Deposition apparatus and deposition method
JP5456711B2 (ja) * 2011-03-03 2014-04-02 住友重機械工業株式会社 成膜装置
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
JP2013102075A (ja) * 2011-11-09 2013-05-23 Fujitsu Semiconductor Ltd エッチング装置
RU2516502C1 (ru) * 2012-11-14 2014-05-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет" Вакуумно-дуговой генератор с жалюзийной системой фильтрации плазмы от микрочастиц
US20160336190A1 (en) * 2014-01-15 2016-11-17 Tokyo Electron Limited Film forming method and heat treatment apparatus
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN110544615B (zh) * 2019-08-28 2022-08-19 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
CN115786866A (zh) * 2022-12-22 2023-03-14 深圳奥卓真空设备技术有限公司 一种icp离子源分区氧化镀膜设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514391A (en) * 1967-05-05 1970-05-26 Nat Res Corp Sputtering apparatus with finned anode
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPH04240725A (ja) * 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd エッチング方法
EP0583473B1 (en) * 1991-04-29 1998-10-14 Scientific-Industrial Enterprise NOVATECH Method and device for treatment of articles in gas-discharge plasma
US6046425A (en) * 1991-05-31 2000-04-04 Hitachi, Ltd. Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber
JP3032362B2 (ja) * 1991-11-22 2000-04-17 東京応化工業株式会社 同軸型プラズマ処理装置
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
JP3242166B2 (ja) * 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
JPH06188108A (ja) * 1992-12-21 1994-07-08 Canon Inc 薄膜抵抗器の製造方法、成膜装置用防着板及び成膜装置
JPH0718423A (ja) * 1993-07-06 1995-01-20 Japan Energy Corp 薄膜形成装置
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5874704A (en) * 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
JP2943691B2 (ja) * 1996-04-25 1999-08-30 日本電気株式会社 プラズマ処理装置
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US6059922A (en) * 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
US5814154A (en) * 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
JP3301357B2 (ja) * 1997-08-26 2002-07-15 株式会社村田製作所 平行平板型プラズマｃｖｄ装置
CN1122117C (zh) * 1997-12-05 2003-09-24 泰格尔公司 带有沉积屏蔽板的等离子体反应器

Also Published As

Publication number Publication date
EP1038046A1 (en) 2000-09-27
US6360686B1 (en) 2002-03-26
US6170431B1 (en) 2001-01-09
EP1038046A4 (en) 2006-08-02
WO1999029923A1 (en) 1999-06-17
KR20010032824A (ko) 2001-04-25
JP2010080972A (ja) 2010-04-08
CN1290308A (zh) 2001-04-04
CA2312777A1 (en) 1999-06-17
US6173674B1 (en) 2001-01-16
US6006694A (en) 1999-12-28
JP2001526459A (ja) 2001-12-18

Similar Documents

Publication Publication Date Title
CN1122117C (zh) 带有沉积屏蔽板的等离子体反应器
CN100495413C (zh) 用于邻接在处理元件上的相邻覆层的方法
US8771423B2 (en) Low sloped edge ring for plasma processing chamber
KR101016913B1 (ko) 처리요소용 배리어층 및 그의 형성방법
CN100555550C (zh) 等离子加工系统中的改进的上电极板的方法和装置
CN100345257C (zh) 等离子体处理装置
CN201025611Y (zh) 用于衬底处理室的带状屏蔽
CN1319247A (zh) 低污染、高密度等离子蚀刻腔体及其加工方法
CN1685465A (zh) 等离子加工系统中用于改进的沉积罩的方法和设备
CN1682342A (zh) 等离子加工系统中带有沉积罩的上电极板
CN1682345A (zh) 用于等离子体加工系统中的改进的波纹管罩的方法和装置
CN1853254A (zh) 用于改良的挡板的方法和装置
CN1682339A (zh) 用于等离子体工艺系统中的改进的挡板的方法和装置
CN1682341A (zh) 用于等离子体处理系统中的改进的折流板的方法和设备
CN1849691A (zh) 包括改进聚焦环的方法和装置
CN1316095A (zh) 改进的固定均匀环设计
CN101076456A (zh) 用于调整一组等离子体处理步骤的方法和装置
CN101422088A (zh) 用于减少等离子体处理系统中的副产品沉积的方法和装置
US8342121B2 (en) Plasma processing apparatus
US20010029894A1 (en) Plasma reactor with a deposition shield
CN101042989A (zh) 等离子体处理装置
KR100897176B1 (ko) 유도 결합형 플라즈마 처리 장치
US20050016568A1 (en) Apparatus and method for cleaning of semiconductor device manufacturing equipment
CN1650405A (zh) 被处理体的蚀刻方法
JP3356654B2 (ja) 半導体ウエハ成膜装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20030924