KR20010032824A - 증착 실드를 갖는 플라즈마 리액터 - Google Patents

증착 실드를 갖는 플라즈마 리액터 Download PDF

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Publication number
KR20010032824A
KR20010032824A KR1020007006143A KR20007006143A KR20010032824A KR 20010032824 A KR20010032824 A KR 20010032824A KR 1020007006143 A KR1020007006143 A KR 1020007006143A KR 20007006143 A KR20007006143 A KR 20007006143A KR 20010032824 A KR20010032824 A KR 20010032824A
Authority
KR
South Korea
Prior art keywords
reactor
shield
chamber
electrode
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020007006143A
Other languages
English (en)
Korean (ko)
Inventor
드오넬라스스테판피.
디티지오로버트에이.
Original Assignee
테갈 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 테갈 코퍼레이션 filed Critical 테갈 코퍼레이션
Publication of KR20010032824A publication Critical patent/KR20010032824A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020007006143A 1997-12-05 1998-12-01 증착 실드를 갖는 플라즈마 리액터 Abandoned KR20010032824A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98573097A 1997-12-05 1997-12-05
US8/985,730 1997-12-05
PCT/US1998/025437 WO1999029923A1 (en) 1997-12-05 1998-12-01 Plasma reactor with a deposition shield

Publications (1)

Publication Number Publication Date
KR20010032824A true KR20010032824A (ko) 2001-04-25

Family

ID=25531755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007006143A Abandoned KR20010032824A (ko) 1997-12-05 1998-12-01 증착 실드를 갖는 플라즈마 리액터

Country Status (7)

Country Link
US (4) US6006694A (enExample)
EP (1) EP1038046A4 (enExample)
JP (2) JP2001526459A (enExample)
KR (1) KR20010032824A (enExample)
CN (1) CN1122117C (enExample)
CA (1) CA2312777A1 (enExample)
WO (1) WO1999029923A1 (enExample)

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US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
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US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP2006019414A (ja) * 2004-06-30 2006-01-19 Canon Inc プラズマ処理装置
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
CN100389225C (zh) * 2005-10-21 2008-05-21 友达光电股份有限公司 等离子体反应腔
US20080233016A1 (en) * 2007-03-21 2008-09-25 Verity Instruments, Inc. Multichannel array as window protection
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
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US20100047594A1 (en) * 2008-08-20 2010-02-25 Aharon Inspektor Equipment and method for physical vapor deposition
TWI498053B (zh) * 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
US8518563B2 (en) * 2010-02-23 2013-08-27 Seagate Technology Llc Covalently bound monolayer for a protective carbon overcoat
US9055653B2 (en) * 2010-04-12 2015-06-09 Sharp Kabushiki Kaisha Deposition apparatus and deposition method
JP5456711B2 (ja) * 2011-03-03 2014-04-02 住友重機械工業株式会社 成膜装置
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
JP2013102075A (ja) * 2011-11-09 2013-05-23 Fujitsu Semiconductor Ltd エッチング装置
RU2516502C1 (ru) * 2012-11-14 2014-05-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский политехнический университет" Вакуумно-дуговой генератор с жалюзийной системой фильтрации плазмы от микрочастиц
US20160336190A1 (en) * 2014-01-15 2016-11-17 Tokyo Electron Limited Film forming method and heat treatment apparatus
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN110544615B (zh) * 2019-08-28 2022-08-19 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
CN115786866A (zh) * 2022-12-22 2023-03-14 深圳奥卓真空设备技术有限公司 一种icp离子源分区氧化镀膜设备

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Publication number Priority date Publication date Assignee Title
US7425438B2 (en) 2002-10-17 2008-09-16 Bioleaders Corporation Vector for anti-HPV vaccine and transformed microorganism by the vector

Also Published As

Publication number Publication date
EP1038046A1 (en) 2000-09-27
CN1122117C (zh) 2003-09-24
US6360686B1 (en) 2002-03-26
US6170431B1 (en) 2001-01-09
EP1038046A4 (en) 2006-08-02
WO1999029923A1 (en) 1999-06-17
JP2010080972A (ja) 2010-04-08
CN1290308A (zh) 2001-04-04
CA2312777A1 (en) 1999-06-17
US6173674B1 (en) 2001-01-16
US6006694A (en) 1999-12-28
JP2001526459A (ja) 2001-12-18

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