CN112166034A - 气体阻隔性基材、其制造方法、具备该气体阻隔性基材的电子器件 - Google Patents
气体阻隔性基材、其制造方法、具备该气体阻隔性基材的电子器件 Download PDFInfo
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- CN112166034A CN112166034A CN201980035362.5A CN201980035362A CN112166034A CN 112166034 A CN112166034 A CN 112166034A CN 201980035362 A CN201980035362 A CN 201980035362A CN 112166034 A CN112166034 A CN 112166034A
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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PCT/JP2019/017667 WO2019230283A1 (ja) | 2018-05-31 | 2019-04-25 | ガスバリアー性基材、その製造方法、それを具備した電子デバイス |
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KR (1) | KR20200132961A (ko) |
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JPH01263158A (ja) * | 1988-04-14 | 1989-10-19 | Showa Denko Kk | 含フッ素コーティング剤およびその製造方法 |
JP2003340955A (ja) * | 2002-05-24 | 2003-12-02 | Dainippon Printing Co Ltd | ガスバリア性フィルム |
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JP2005313461A (ja) * | 2004-04-28 | 2005-11-10 | Nippon Zeon Co Ltd | ガスバリア性積層体及び発光表示素子 |
JP6317624B2 (ja) * | 2014-05-22 | 2018-04-25 | 双葉電子工業株式会社 | 乾燥剤、封止構造及び有機el素子 |
JP2015225785A (ja) * | 2014-05-28 | 2015-12-14 | 国立大学法人山形大学 | 有機エレクトロルミネッセンス素子の封止方法 |
JP6601591B2 (ja) * | 2017-11-10 | 2019-11-06 | コニカミノルタ株式会社 | 乾燥剤、それを含有する有機薄膜、有機薄膜が積層された有機積層膜、及びそれを具備した電子デバイス |
WO2019093459A1 (ja) * | 2017-11-10 | 2019-05-16 | コニカミノルタ株式会社 | 電子デバイスの製造方法 |
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- 2019-04-25 JP JP2020521803A patent/JPWO2019230283A1/ja active Pending
- 2019-04-25 KR KR1020207029758A patent/KR20200132961A/ko not_active Application Discontinuation
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01263158A (ja) * | 1988-04-14 | 1989-10-19 | Showa Denko Kk | 含フッ素コーティング剤およびその製造方法 |
JP2003340955A (ja) * | 2002-05-24 | 2003-12-02 | Dainippon Printing Co Ltd | ガスバリア性フィルム |
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JPWO2019230283A1 (ja) | 2021-07-08 |
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