CN112164656A - 一种通过利用ito作为源漏极来改进闪存单元性能的方法 - Google Patents
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Abstract
本发明公开一种通过利用ITO作为源漏极来改进闪存单元性能的方法,本方法首先在重掺杂P型硅片衬底上生长一层热氧化SiO2层、一层Si3N4层和、一层Al2O3层;然后在Al2O3层上用ALD沉积出通道层,然后使用正光刻胶刻蚀掉多余的通道层部分,使整个通道层实现多个分离的闪存单元,最后使用负光刻胶刻蚀出源漏极区域;最后在刻蚀出的源漏极区域内沉积出源极和漏极,其中源极和漏极采用氧化铟锡,通过射频磁控溅射沉积形成。本发明在源漏极沉积过程中,采用磁控溅射的方法来沉积氧化铟锡层,与IGZO沟道结合获得高稳定性、高信赖度的闪存结构。
Description
技术领域
本发明涉及半导体集成电路技术领域,具体为一种通过利用ITO作为源漏极来改进闪存单元性能的方法。
背景技术
闪存由于其具有高密度、低价格和电可编程及擦除的优点已被广泛作为非易失性存储器的最优选择。随着对大容量高性能的存储器件的需求日益增加,同时新的技术节点也在日益成熟,督促闪存单元也在利用高节点的技术进行生产,通过对源极和漏极材料的改进,半导体沟道材料的选择,使用更优化的厚度比例等等,可以使闪存单元的性能更加满足高性能存储器件的需求。源极漏极与浮栅和控制栅构成了闪存单元的重要组成部分,浮栅作为储存电荷的结构,由于性能不稳定已经大部分被电荷势阱层所代替;控制栅主要控制闪存单元的写入、擦除、导通截止等行为。在闪存单元工作过程中源极漏极主要提供电场,实现闪存单元的导通,所以需要有较强的导电性,基本上是由金属构成,并且与沟道直接接触。但在闪存单元的加工和制造过程中,温度的提高会促进原子的扩散,若沟道采用新型氧化物半导体材料,会将沟道材料中的氧原子扩散到控制栅中,在源漏极与隔离氧化物的中间形成一层新的氧化物,影响导电性能,同时在加工过程中,与空气的接触也会造成源漏极的氧化,降低闪存单元的使用性能。
发明内容
针对现有技术的缺陷,本发明提供一种通过利用ITO作为源漏极来改进闪存单元性能的方法,在源漏极沉积过程中,采用磁控溅射的方法来沉积氧化铟锡(ITO)层,与IGZO沟道结合获得高稳定性、高信赖度的闪存结构。
为了解决所述技术问题,本发明采用的技术方案是:一种通过利用ITO作为源漏极来改进闪存单元性能的方法,包括以下步骤:
S01)、在重掺杂P型硅片衬底上生长一层热氧化SiO2层,然后分别用低压化学气相沉积一层Si3N4层和热ALD沉积一层Al2O3层,其中热氧化SiO2层为氧化隔离层,Si3N4层为电荷陷阱层,Al2O3层为电子隧穿层;
S02)、在电子隧穿层上用ALD沉积出通道层,然后使用正光刻胶刻蚀掉多余的通道层部分,使整个通道层实现多个分离的闪存单元,最后使用负光刻胶刻蚀出源漏极区域;
S03)、在刻蚀出的源漏极区域内沉积出源极和漏极,其中源极和漏极采用氧化铟锡,通过射频磁控溅射沉积形成。
进一步的,步骤S03的沉积条件为:直流功率50W、4 sccm氩气流量和4mtorr室压沉积。
进一步的,所述源极、漏极厚度为180nm。
进一步的,所述通道层为氧化铟镓锌或者氧化铟镓。
进一步的,通道层的厚度为15nm,宽度和长度为 300μm和100μm。
进一步的,热氧化SiO2层厚度为5nm,Si3N4层厚度为7nm,Al2O3层厚度为5nm。
进一步的,重掺杂P型硅片衬底的厚度为500微米。
进一步的,经过步骤S03后,将整个硅晶片进行500℃~700℃的退火处理。
本发明的有益效果:本发明改善了普通金属作为源漏极容易被氧化的缺点,使得闪存单元的性能更优异。通过磁控溅射的方法确定了ITO的沉积条件,并且可以在实际生产过程中直接应用。验证了ITO作为闪存单元源漏极的可能性,为接下来的闪存器件的发展创造了新的方向。
附图说明
图1为本方法的流程图;
图2为以ITO为源漏极的IGZO层结构的电镜照片;
图3为以Al为源漏极的IGZO层结构的电镜照片。
具体实施方式
下面结合附图和具体实施例对本发明作进一步的说明。
实施例1
ITO是一种N型氧化物半导体,纳米铟锡金属氧化物,具有很好的导电性和透明性,因此经常被沉积在玻璃、柔性塑料等基底上作为透明导电薄膜。除了在显示材料中有着较为广泛的应用,ITO作为一种稳定的导电材料,在闪存器件中也有着较大的发展潜力,ITO膜层之电阻率一般在5*10E-4左右,最好可达5*10E-5,已接近金属的电阻率。并且ITO具有耐高温和耐酸碱性的特征,而在半导体器件的加工过程中会不可避免地出现高温与酸碱液浸洗工序,ITO的这一特性将为半导体器件加工提供更高的适应性。
本实施例公开一种通过利用ITO作为源漏极来改进闪存单元性能的方法,如图1所示,本方法包括以下步骤:
S01)、在重掺杂P型硅片衬底上生长一层热氧化SiO2层,然后分别用低压化学气相沉积一层Si3N4层和热ALD沉积一层Al2O3层,其中热氧化SiO2层为氧化隔离层,Si3N4层为电荷陷阱层,Al2O3层为电子隧穿层;
S02)、在电子隧穿层上用ALD沉积出通道层,然后使用正光刻胶刻蚀掉多余的通道层部分,使整个通道层实现多个分离的闪存单元,最后使用负光刻胶刻蚀出源漏极区域;
S03)、在刻蚀出的源漏极区域内沉积出源极和漏极,其中源极和漏极采用氧化铟锡,通过射频磁控溅射沉积形成。
本实施例中,步骤S03的沉积条件为:直流功率50W、4 sccm氩气流量和4mtorr室压沉积。所述源极、漏极厚度为180nm。
所述通道层为氧化铟镓锌或者氧化铟镓。通道层的厚度为15nm,宽度和长度为300μm和100μm,通过步骤S03将沟道的宽度和长度控制在 300μm和100μm。
本实施例中,热氧化SiO2层厚度为5nm,Si3N4层厚度为7nm,Al2O3层厚度为5nm。重掺杂P型硅片衬底的厚度为500微米。
本实施例中,通道层采用IGZO氧化铟镓锌,为了提高IGZO通道层的性能,经过步骤S03后,将整个硅晶片进行500℃~700℃的退火处理。所述退火处理是指在退火炉的氧气氛围中,缓慢加热(1个小时)到500℃~700℃,然后再室温状态下,缓慢冷却到室温,完成晶粒的重组。
为了比较源漏极材料的区别,我们将以ITO作为源漏极和Al作为源漏极退火结束后的器件层进行纵向切割,在800kx的放大倍数下拍摄了横截面结构的TEM照片来分析侧面结构的特征。图2是利用ITO作为源漏极的闪存器件的横截面TEM照片,在退火过程后ITO与IGZO界面依旧稳定,没有反应出其他的生成物。图3是以Al作为源漏极的闪存器件的横截面照片,可以明显的看出Al与IGZO界面中间反应出了4nm的氧化铝结构。由于这层氧化铝的出现大大影响了Al与IGZO连接处的电场效应,削弱了闪存器件的性能。
由此我们可以看出,ITO作为闪存器件的源漏极,使得闪存器件性能更加的稳定。我们选取了磁控溅射的方法来沉积ITO,并且确定了ITO的沉积条件,使得更稳定,更优异的闪存器件结构被发明,为闪存器件的实际生产应用奠定了基础。
以上描述的仅是本发明的基本原理和优选实施例,本领域技术人员根据本发明做出的改进和替换,属于本发明的保护范围。
Claims (8)
1.一种通过利用ITO作为源漏极来改进闪存单元性能的方法,其特征在于:包括以下步骤:
S01)、在重掺杂P型硅片衬底上生长一层热氧化SiO2层,然后分别用低压化学气相沉积一层Si3N4层和热ALD沉积一层Al2O3层,其中热氧化SiO2层为氧化隔离层,Si3N4层为电荷陷阱层,Al2O3层为电子隧穿层;
S02)、在电子隧穿层上用ALD沉积出通道层,然后使用正光刻胶刻蚀掉多余的通道层部分,使整个通道层实现多个分离的闪存单元,最后使用负光刻胶刻蚀出源漏极区域;
S03)、在刻蚀出的源漏极区域内沉积出源极和漏极,其中源极和漏极采用氧化铟锡,通过射频磁控溅射沉积形成。
2.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:步骤S03的沉积条件为:直流功率50W、4 sccm氩气流量和4mtorr室压沉积。
3.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:所述源极、漏极厚度为180nm。
4.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:所述通道层为氧化铟镓锌或者氧化铟镓。
5.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:通道层的厚度为15nm,宽度和长度为 300μm和100μm。
6.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:热氧化SiO2层厚度为5nm,Si3N4层厚度为7nm,Al2O3层厚度为5nm。
7.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:重掺杂P型硅片衬底的厚度为500微米。
8.根据权利要求1所述的通过ITO作为源漏极来改进闪存单元性能的方法,其特征在于:经过步骤S03后,将整个硅晶片进行500℃~700℃的退火处理。
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