CN112133649A - 一种大尺寸晶片均匀高温腐蚀装置及其腐蚀方法 - Google Patents
一种大尺寸晶片均匀高温腐蚀装置及其腐蚀方法 Download PDFInfo
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Abstract
本发明公开了一种大尺寸晶片均匀高温腐蚀装置及其腐蚀方法,包括腐蚀腔,内设有喷液系统和加热系统,喷液系统包括输送臂和喷液嘴,输送臂内部为腐蚀液输送管道,输送臂可以在水平面内前后移动和左右转动,喷液嘴连接腐蚀液输送管,直接将腐蚀液喷在晶片表面;加热系统包括晶片固定台和加热台,晶片固定台用周围多点卡口方式将晶片水平固定在台上,晶片固定台可旋转,加热台位于晶片固定台下方,直接加热晶片固定台,通过传导方式将热量传递给晶片。通过协调晶片固定台转速与输送臂平移速度和转动速度,喷液嘴可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。本发明结构简单,可实现大尺寸晶片高温均匀腐蚀,提高了腐蚀效率和均匀性。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种大尺寸晶片均匀高温腐蚀装置及其腐蚀方法。
背景技术
半导体工艺中常用单晶片作为衬底材料。随着科学技术的发展和工艺水平的提高,现代半导体制造领域使用的衬底材料越来越向大尺寸发展。在半导体集成电路工艺中,晶片表面或背面腐蚀是其中一道关键工序。湿法腐蚀工艺因其成本低、效率高等优点而被大量采用。但是这种湿法工艺存在的最大问题就是晶片整体腐蚀均匀性差,特别是对于大尺寸晶片,这种缺点尤为明显。这种不均匀腐蚀将会给后道工序带来加工难题,不仅仅降低部分芯片性能,更加降低了产品成品率和优品率。另外,有些晶片腐蚀需要在一定温度下才能达到较好的效果,只对腐蚀液进行升温处理,其降温速度很快,效果并不理想,而且不均匀性更加突出。
现代工艺中,可以采用立式喷淋腐蚀方法,利用输送臂将腐蚀液喷射到旋转的晶片表面,使得腐蚀液与晶片表面物质发生化学反应,反应物质随喷淋腐蚀液冲走,从而得到无缺陷无杂质的完好的晶格结构面。对于小尺寸晶片,这种方法效果较好,但是对于大尺寸晶片,这种工艺会由于晶片中心和边界处的线速度不同而导致腐蚀液分布不均,中心较多而边界处较少,所以表面腐蚀效果也不均匀,同时腐蚀后的晶片厚度发生明显偏差,中间薄边界厚,这对于后道工序的加工带来很大困难。而且温度的不均匀性对于大尺寸晶片表现尤为明显。因而在半导体腐蚀工序中,如何尽可能做到均匀腐蚀,特别在高温条件下,就成为半导体加工技术领域中一个关键问题。
发明内容
发明目的:针对上述问题,本发明提供了一种大尺寸晶片均匀高温腐蚀装置及其腐蚀方法,根据对喷液系统与加热系统的设计,通过协调晶片固定台转速与输送臂平移速度和转动速度,喷液嘴可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。
技术方案:为了解决上述技术问题,本发明采用的技术方案为:一种大尺寸晶片均匀高温腐蚀装置,包括腐蚀腔,腐蚀腔内设有喷液系统和加热系统;
所述喷液系统包括输送臂和喷液嘴,所述输送臂内部为腐蚀液输送管道,所述输送臂可以在水平面内前后移动和左右转动,所述喷液嘴连接腐蚀液输送管,直接将腐蚀液喷在晶片表面;
所述加热系统包括晶片固定台和加热台,所述晶片固定台用周围多点卡口方式将晶片水平固定在台上,所述晶片固定台可旋转,所述加热台位于晶片固定台下方,直接加热晶片固定台,通过传导方式将热量传递给晶片。
进一步的,通过协调晶片固定台转速与输送臂平移速度和转动速度,喷液嘴可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。
一种大尺寸晶片均匀高温腐蚀方法,包括如下步骤:
步骤一、晶片固定台放好待腐蚀晶片;
步骤二、设置好腐蚀液喷液时间,设置输送臂前后移动速度,设置输送臂平面内摆动速度,设置晶片旋转速度;
步骤三、设置加热温度,并加热到所需温度;
步骤四、开始腐蚀清洗,腐蚀液喷射轨迹为进动扇形,随着晶片的旋转而迅速布满晶片表面;
步骤五、设定时间运行结束,自动关闭步骤二所设参量开关,关闭加热开关,完成晶片高温腐蚀过程。
进一步的,所述的步骤一中晶片固定方式为周围多点卡口,根据晶片大小,可选4-12点卡口。
进一步的,所述的步骤二中腐蚀液喷射轨迹由输送臂的前后移动和平面内左右摆动共同决定,针对不同尺寸的晶片可以设置不同的移动范围和摆动角度。
进一步的,所述的步骤三中的温度设定范围在20-300℃。
有益效果:本发明提供了一种大尺寸晶片均匀高温腐蚀装置与方法,通过喷液系统和加热系统设计,所述喷液系统包括输送臂和喷液嘴,所述输送臂内部为腐蚀液输送管道,所述输送臂可以在水平面内前后移动和左右转动,所述喷液嘴连接腐蚀液输送管,直接将腐蚀液喷在晶片表面;所述加热系统包括晶片固定台和加热台,所述晶片固定台用周围多点卡口方式将晶片水平固定在台上,所述晶片固定台可旋转,所述加热台位于晶片固定台下方,直接加热晶片固定台,通过传导方式将热量传递给晶片。通过协调晶片固定台转速与输送臂平移速度和转动速度,喷液嘴可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。本发明结构简单,可实现大尺寸晶片高温均匀腐蚀,提高了腐蚀效率和均匀性。
附图说明
图1为本发明的结构示意图;其中,1、腐蚀腔,2、输送臂,3、喷液嘴,4、晶片固定台,5、加热台。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,以使本领域的技术人员能够更好的理解本发明的优点和特征,从而对本发明的保护范围做出更为清楚的界定。本发明所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例,基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例
针对现有晶片特别是大尺寸晶片高温腐蚀技术中存在的上述困难,本发明提供了一种大尺寸晶片均匀高温腐蚀装置,如图1所示,所述的大尺寸晶片均匀高温腐蚀装置包括腐蚀腔1,腐蚀腔1内设有喷液系统和加热系统。
所述喷液系统包括输送臂2和喷液嘴3,所述输送臂2内部为腐蚀液输送管道,所述输送臂2可以在水平面内前后移动和左右转动,所述喷液嘴3连接腐蚀液输送管,直接将腐蚀液喷在晶片表面。
所述加热系统包括晶片固定台4和加热台5,所述晶片固定台4用周围多点卡口方式将晶片水平固定在台上,所述晶片固定台4可旋转,所述加热台5位于晶片固定台4下方,直接加热晶片固定台4,通过传导方式将热量传递给晶片。通过协调晶片固定台4转速与输送臂2平移速度和转动速度,喷液嘴3可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。
本发明中的大尺寸晶片均匀高温腐蚀方法,包括如下步骤:
步骤一、晶片固定台放好待腐蚀晶片;晶片固定方式为周围多点卡口,根据晶片大小,可选4-12点卡口。
步骤二、设置好腐蚀液喷液时间,设置输送臂前后移动速度,设置输送臂平面内摆动速度,设置晶片旋转速度;腐蚀液喷射轨迹由输送臂的前后移动和平面内左右摆动共同决定,针对不同尺寸的晶片可以设置不同的移动范围和摆动角度。
步骤三、设置加热温度,范围在20-300℃,并加热到所需温度;
步骤四、开始腐蚀清洗,腐蚀液喷射轨迹为进动扇形,随着晶片的旋转而迅速布满晶片表面;
步骤五、设定时间运行结束,自动关闭步骤二所设参量开关,关闭加热开关,完成晶片高温腐蚀过程。
具体实施例1
一种大尺寸晶片均匀高温腐蚀方法,包括下述步骤:
步骤一、晶片固定台放好待腐蚀6英寸碳化硅晶片;
步骤二、设置好腐蚀液(氨水/双氧水/纯水混合液)喷液时间8分钟,设置输送臂前后移动速度,设置输送臂平面内摆动速度,设置晶片旋转速度;
步骤三、设置加热温度85℃,并加热到85℃;
步骤四、开始腐蚀清洗,腐蚀液喷射轨迹为进动扇形,随着晶片的旋转而迅速布满晶片表面;
步骤五、设定时间运行结束,步骤二所设参量开关自动关闭,关闭加热开关,完成晶片高温腐蚀过程。
由此,本发明提供了一种大尺寸晶片均匀高温腐蚀装置与方法,采用本设备及方法腐蚀得到的大尺寸晶片从晶片中心到边缘处腐蚀均匀,晶片厚度差小。
在本说明书的描述中,参考术语“实施例”、“具体实施例”、“一些实施例”等的描述意指结合该实施例或示例描述的具体特征、材料、结构或者特点包含于本发明的至少一个实施例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例。而且,描述的具体特征、材料、结构或者特点可以在任何的一个或多个实施例中以合适的方式结合。
尽管给出和描述了本发明的实施例,本领域的技术人员可以理解:在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围有权利要求及其等同物限定。
Claims (6)
1.一种大尺寸晶片均匀高温腐蚀装置,其特征在于:包括腐蚀腔,腐蚀腔内设有喷液系统和加热系统;
所述喷液系统包括输送臂和喷液嘴,所述输送臂内部为腐蚀液输送管道,所述输送臂可以在水平面内前后移动和左右转动,所述喷液嘴连接腐蚀液输送管,直接将腐蚀液喷在晶片表面;
所述加热系统包括晶片固定台和加热台,所述晶片固定台用周围多点卡口方式将晶片水平固定在台上,所述晶片固定台可旋转,所述加热台位于晶片固定台下方,直接加热晶片固定台,通过传导方式将热量传递给晶片。
2.根据权利要求1所述的大尺寸晶片均匀高温腐蚀装置,其特征在于:通过协调晶片固定台转速与输送臂平移速度和转动速度,喷液嘴可以迅速并均匀的将腐蚀液喷射在晶片表面,实现高温均匀腐蚀。
3.一种大尺寸晶片均匀高温腐蚀方法,其特征在于,包括如下步骤:
步骤一、晶片固定台放好待腐蚀晶片;
步骤二、设置好腐蚀液喷液时间,设置输送臂前后移动速度,设置输送臂平面内摆动速度,设置晶片旋转速度;
步骤三、设置加热温度,并加热到所需温度;
步骤四、开始腐蚀清洗,腐蚀液喷射轨迹为进动扇形,随着晶片的旋转而迅速布满晶片表面;
步骤五、设定时间运行结束,自动关闭步骤二所设参量开关,关闭加热开关,完成晶片高温腐蚀过程。
4.根据权利要求3所述的大尺寸晶片均匀高温腐蚀方法,其特征在于:所述的步骤一中晶片固定方式为周围多点卡口,根据晶片大小,可选4-12点卡口。
5.根据权利要求3所述的大尺寸晶片均匀高温腐蚀方法,其特征在于:所述的步骤二中腐蚀液喷射轨迹由输送臂的前后移动和平面内左右摆动共同决定,针对不同尺寸的晶片可以设置不同的移动范围和摆动角度。
6.根据权利要求3所述的大尺寸晶片均匀高温腐蚀方法,其特征在于:所述的步骤三中的温度设定范围在20-300℃。
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