CN112080794A - 用于晶体生长过程中温度控制的方法和系统 - Google Patents
用于晶体生长过程中温度控制的方法和系统 Download PDFInfo
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Crystals, And After-Treatments Of Crystals (AREA)
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Application Number | Priority Date | Filing Date | Title |
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CN202010311608.1A CN112080794B (zh) | 2020-04-20 | 2020-04-20 | 用于晶体生长过程中温度控制的方法和系统 |
JP2022563378A JP2023522906A (ja) | 2020-04-20 | 2021-04-06 | 結晶成長過程における温度制御方法及びシステム |
US17/913,173 US20230110359A1 (en) | 2020-04-20 | 2021-04-06 | Method and System for Controlling Temperature during Crystal Growth |
KR1020227038600A KR20220157506A (ko) | 2020-04-20 | 2021-04-06 | 결정 성장 과정에서 온도 제어를 위한 방법 및 시스템 |
PCT/CN2021/085533 WO2021213178A1 (zh) | 2020-04-20 | 2021-04-06 | 用于晶体生长过程中温度控制的方法和系统 |
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CN112080794B CN112080794B (zh) | 2022-10-21 |
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JP (1) | JP2023522906A (zh) |
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WO (1) | WO2021213178A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2021213178A1 (zh) * | 2020-04-20 | 2021-10-28 | 徐州鑫晶半导体科技有限公司 | 用于晶体生长过程中温度控制的方法和系统 |
CN115640983A (zh) * | 2022-11-18 | 2023-01-24 | 浙江晶盛机电股份有限公司 | 功率调整方法、装置、计算机设备和存储介质 |
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CN118147750A (zh) * | 2024-04-10 | 2024-06-07 | 西安交通大学 | 一种氧化镓单晶生长的加热功率匹配方法、装置和设备 |
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CN1295632A (zh) * | 1998-04-01 | 2001-05-16 | Memc电子材料有限公司 | 控制半导体晶体生长的开环方法和系统 |
CN1737216A (zh) * | 2004-06-07 | 2006-02-22 | Memc电子材料有限公司 | 通过控制熔-固界面形状生长硅晶体的方法和装置 |
CN101445954A (zh) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | 一种控制直拉硅单晶生长过程中晶体和熔体界面处的温度梯度及热历史的方法 |
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US20130133567A1 (en) * | 2003-11-03 | 2013-05-30 | Memc Electronic Materials, Inc. | Systems and processes for continuous growing of ingots |
CN108754599A (zh) * | 2018-05-31 | 2018-11-06 | 西安理工大学 | 一种基于有限元数值模拟的硅单晶生长温度控制方法 |
CN108914201A (zh) * | 2018-08-29 | 2018-11-30 | 西安理工大学 | 一种直拉硅单晶生长过程工艺参数优化方法 |
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CN112080794B (zh) * | 2020-04-20 | 2022-10-21 | 徐州鑫晶半导体科技有限公司 | 用于晶体生长过程中温度控制的方法和系统 |
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2020
- 2020-04-20 CN CN202010311608.1A patent/CN112080794B/zh active Active
-
2021
- 2021-04-06 WO PCT/CN2021/085533 patent/WO2021213178A1/zh active Application Filing
- 2021-04-06 KR KR1020227038600A patent/KR20220157506A/ko active IP Right Grant
- 2021-04-06 US US17/913,173 patent/US20230110359A1/en active Pending
- 2021-04-06 JP JP2022563378A patent/JP2023522906A/ja active Pending
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CN101445954A (zh) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | 一种控制直拉硅单晶生长过程中晶体和熔体界面处的温度梯度及热历史的方法 |
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CN110016714A (zh) * | 2018-01-09 | 2019-07-16 | 爱思开矽得荣株式会社 | 用于单晶锭生长的温度控制装置及其应用的温度控制方法 |
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CN108914201A (zh) * | 2018-08-29 | 2018-11-30 | 西安理工大学 | 一种直拉硅单晶生长过程工艺参数优化方法 |
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WO2021213178A1 (zh) * | 2020-04-20 | 2021-10-28 | 徐州鑫晶半导体科技有限公司 | 用于晶体生长过程中温度控制的方法和系统 |
CN115640983A (zh) * | 2022-11-18 | 2023-01-24 | 浙江晶盛机电股份有限公司 | 功率调整方法、装置、计算机设备和存储介质 |
CN115640983B (zh) * | 2022-11-18 | 2023-03-07 | 浙江晶盛机电股份有限公司 | 功率调整方法、装置、计算机设备和存储介质 |
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CN112080794B (zh) | 2022-10-21 |
US20230110359A1 (en) | 2023-04-13 |
JP2023522906A (ja) | 2023-06-01 |
KR20220157506A (ko) | 2022-11-29 |
WO2021213178A1 (zh) | 2021-10-28 |
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