CN112005370A - 用于光子芯片和电气芯片集成的集成电路桥 - Google Patents

用于光子芯片和电气芯片集成的集成电路桥 Download PDF

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CN112005370A
CN112005370A CN201980027431.8A CN201980027431A CN112005370A CN 112005370 A CN112005370 A CN 112005370A CN 201980027431 A CN201980027431 A CN 201980027431A CN 112005370 A CN112005370 A CN 112005370A
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interposer
pic
exposed
mold compound
optoelectronic assembly
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CN112005370B (zh
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马修·J·特拉韦尔索
桑德普·拉兹丹
阿什利·J·马克尔
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Cisco Technology Inc
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Cisco Technology Inc
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Abstract

提供了一种光电子装配件及其制造方法。该装配件包括：模压化合物；光子集成电路(PIC)，嵌入在模压化合物中，具有在第一平面中从模压化合物暴露出来的表面；中介层，嵌入在模压化合物中，具有在第一平面中从模压化合物暴露出来的表面，即，与PIC的暴露表面共面；以及电子集成电路(EIC)，耦合到PIC的暴露表面和中介层的暴露表面，建立PIC和中介层之间的桥接电气连接。

Description

用于光子芯片和电气芯片集成的集成电路桥
技术领域
本公开给出的实施例一般地涉及电气地连接光子集成电路和硅基电气集成电路。
背景技术
光子芯片和电气芯片可以引线键合到共享基底和/或彼此引线键合。但是，使用引线键合将光子芯片和电子电气芯片连接到共享基底需要使用具有垂直互连通路(VIA)的球栅阵列(BGA)基底或外部陶瓷，这是实现与其他专用集成电路(ASIC)的密集集成所不期望的。另外，使用引线键合将光子芯片和电气芯片与共享基底连接要求将输入/输出(I/O)接口布置在光子芯片的顶部表面上，这会限制I/O接口的数目。另外，这种引线键合互连会导致光子高速传输(例如，大于25吉比特每秒)的信号完整性的若干问题(与其他片上和基底上的电路的相互感抗和阻抗失配、以及寄生电容有关)。另外，在不使用引线键合的情况下将光子芯片连接到电气芯片的解决方案通常需要大型的、生产成本高的光子芯片来提供建立芯片和共享基底之间的连接所需要的足够大的表面区域。
附图说明
因此，通过可以详细理解本公开的上述特征的方式，参考实施例给出以上简要概述的本公开的更具体的描述，其中，附图示出了一些实施例。但是，应该注意的是，附图仅示出了本公开的典型实施例，因此不应该认为限制本公开的范围，因为本公开可以覆盖其他等同效果的实施例。
图1示出了根据本公开的一个实施例的示例光电子装配件的侧视图；
图2示出了根据本公开的一个实施例的突出示出垂直互连通路的示例光电子装配件的侧视图；
图3A和3B示出了根据本公开的实施例的示例光电子装配件的俯视图；
图4A和4B示出了根据本公开的实施例的使用两个EIC桥的示例光电子装配件的俯视图；
图5A和5B分别示出了根据本公开的一个实施例的使用EIC桥和安装的EIC的示例光电子装配件的俯视图和侧视图；
图6示出了概括根据本公开的一个实施例的制造光电子装配件的示例方法的一般操作的流程图；
图7A-H示出了根据本公开的一个实施例的在光电子装配件的制造期间创建的各种子装配件的示例。
为了帮助理解，在可能的情况下，使用相同的参考标号来表示各个图中共有的相同元件。可以预见的是，在没有特别详述的情况下，在一个实施例中公开的元件可以有利地用在其他实施例中。
具体实施方式
概述
独立权利要求给出了本发明的多个方面，从属权利要求给出了优选特征。一个方面的特征可以单独应用于每个方面也可以与其他方面结合应用。
本公开给出的一个实施例提供了一种光电子装配件，包括：模压化合物；光子集成电路(PIC)，嵌入在模压化合物中，该PIC具有从模压化合物中暴露出来的表面；中介层，嵌入在模压化合物中，该中介层具有从模压化合物中暴露出来并且与PIC的表面共面的表面；以及电子集成电路(EIC)，耦合到PIC的从模压化合物中暴露出来的表面和中介层的从模压化合物中暴露出来的表面，该EIC包括PIC和中介层之间的桥接电气连接。
本公开给出的另一实施例提供了一种重组晶圆，包括：模压化合物；多个晶粒，嵌入在模压化合物中，该多个晶粒中的每个晶粒包括：光子集成电路(PIC)，嵌入在模压化合物中，具有在模压化合物的外面的暴露表面；中介层，嵌入在模压化合物中，具有与PIC的暴露表面共面并且在模压化合物的外面的第一表面，并且具有与第一表面相对并且在模压化合物外面的第二表面；以及电子集成电路(EIC)，连接到PIC的暴露表面的一部分和中介层的第一表面的一部分。
在本公开给出的又一实施例中，提供了一种制造光电子装配件的方法，该方法包括：将光子集成电路(PIC)和中介层定位在载体上，其中，PIC具有暴露表面，中介层具有与暴露表面共面的第一表面；使用模压化合物封装PIC和中介层，以形成包括PIC和中介层的重组晶圆，该重组晶圆具有与暴露表面共面的第一侧和与第一侧相对的第二侧，其中，模压化合物不覆盖暴露表面和第一表面；从第二侧移除模压化合物的一部分，以揭露出中介层的与第一表面相对的部分；以及将电子集成电路(EIC)与PIC表面和中介层表面键合，以电气地桥接PIC和中介层。
示例实施例
各种类型的集成电路(IC)是由具有各种物理特性、制造成本、和期望用途的各种材料制成的。光子IC(PIC)被设计为作为光纤系统的一部分执行光学操作，例如，以将光信号转换为电信号或者从电信号转换光信号。电气IC(EIC)被设计为使用电信号执行操作，并且可以与PIC耦合以递送用于调制光信号的电气数据信号，接收作为电信号的已转换光信号以进行分析或传递到其他电路，或者向PIC提供用于光信号到电信号或电信号到光信号的转换以及分析的功率。PIC一般由具有较高的电气寄生特性的材料制成并且比可比较的EIC具有更高的生产成本，因此光电子装配件结合PIC使用EIC来执行集成的光学和电子处理，以降低成本并提高性能效率。在光电子装配件中，较小的PIC相对于较大的PIC提供更大的成本节省和性能效率，但是PIC应该足够大以纳入光互连(例如，光纤电缆)和电互连来接收和发送来自和去往相关联的EIC的电信号。
在一个实施例中，PIC和EIC相互耦合，以使用扇出晶圆级集成形成光电子装配件，其中，中介层基底和PIC嵌入在一起以建立共面的顶部表面，在该顶部表面上，EIC将PIC与中介层基底中的电气连接相桥接。本实施例允许使用更小、更容易生产、且更便宜的PIC，它们不需要提供用于引线键合的表面区域或大EIC附接区域。
图1示出了根据本公开的一个实施例的示例光电子装配件100的侧视图。所示出的示例光电子装配件100包括模压化合物110，该模压化合物中嵌入有PIC 120、中介层130、以及构造的VIA 140。EIC 150使用柱式凸块160耦合到PIC 120和中介层130二者。在一个实施例中，EIC 150用作PIC 120和光电子中介层130之间的电桥，布置在光电子装配件100一侧。外部连接170的阵列经由输入/输出(I/O)垫片180安装在光电子装配件100的相对于EIC150的另一侧。在一些实施例中，各种无源组件190也被包围在模压化合物110中。
在一个实施例中，模压化合物110是用于制造重组晶圆的任何环氧树脂或基底。重组晶圆包括PIC 120，以提供光接口，用于经由外部光学器件(未示出)发送和/或接收来自和/或去往光电子装配件100的光信号。外部光学器件的示例包括但不限于与PIC 120中的光接口连接的激光器、光电子二极管、光纤电缆、透镜、棱镜、隔离器、光学MUX/DMUX器件等。在各种实施例中，PIC 120可以经由倏逝波耦合、边缘耦合、对接耦合、光栅耦合等连接到外部光学器件。
PIC 120限定第一表面(例如，暴露表面121)，其从用来捕捉PIC 120的模压化合物110中延伸出来或者以其他方式而没有被模压化合物110覆盖。该暴露表面121包括用于与外部光学器件耦合的第一部分123和用于与EIC 150、中介层130、以及无源组件190耦合的第二部分124。在一个实施例中，PIC 120在与第一暴露平面121相交的平面中包括第二暴露表面122，例如，图1中示出的垂直的第二暴露平面122。但是，在另一实施例中，第二暴露表面122可以在与第一暴露表面121平行的平面中(即，与暴露表面121相反)。第二暴露表面122可以用于耦合到外部电气器件、外部光学器件、中介层130、无源组件190、也可以没有光或电连接。在一些实施例中，反射涂层被应用于第二暴露表面121。
中介层130提供安装EIC 150的平台，并且光电子装配件100的其他组件连接到该平台从而连接到EIC 150。中介层130限定第一表面131，该第一表面31从用于捕捉中介层130的模压化合物110中延伸出来或者以其他方式没有被模压化合物110覆盖，并且与PIC120的暴露表面121共面。由于PIC 120的暴露表面121和中介层130的第一表面132二者在一个共享平面上，所以EIC 150可以平坦地安装到PIC 120和中介层130二者。在一些实施例中，中介层130的与第一表面131相反的第二表面132在光电子装配件100的相反侧被暴露，而在其他实施例中，第二表面131被包围在模压化合物110中。
中介层130可以由硅、玻璃、陶瓷、或有机基底构成，用作EIC 150和印刷电路板(PCB)之间的低寄生损耗电线管，该PCB提供用于EIC 150到中介层130的倒装键合的刚性界面。中介层130可以包含用于支持PIC120的电气组件、光学组件、电气组件和光学组件二者，或者不包含用于支持PIC 120的电气或光学组件。
模压化合物110的热膨胀系数(CTE)被设计为尽可能接近PIC 120和中介层130的热膨胀系数，以允许模压封装的非常低的翘曲或弯曲。但是，也可以通过控制中介层130和PIC 120(二者均具有较低CTE)相对于模压化合物110(一般具有较高CTE)的体积百分比来管理翘曲。例如，确保封装的70-80％的体积被PIC 120和中介层130占据将有助于降低具有高CTE的模压化合物110的影响(因为混合规则)，从而显著降低整个封装的翘曲。控制模压封装的翘曲或弯曲对于获取与EIC 150的可靠的倒装键合非常重要，因为EIC 150键合到PIC 120和中介层130二者，而这二者嵌入在模压封装的模压化合物110中。在EIC 150倒装键合到模压封装后，由于EIC 150用作PIC 120和中介层130之间的刚性桥并且增加了整个封装的硅体积百分比(硅具有低CTE)，该封装的总体翘曲进一步改善。这进一步有助于例如将模压封装表面安装到外部PCB。
在一些实施例中，第一重布线层(RDL)101作为扇出晶圆工艺的一部分被形成，以将光电子装配件100的顶侧的来自各种构造的VIA 140和无源组件190的电接触向彼此延伸、延伸到中介层130的第一表面131、以及延伸到PIC 120的暴露表面121的第一部分。另外，中介层130和PIC120之间的电气连接也可以建立在第一RDL 101中。在另外的实施例中，第二RDL 102作为扇出晶圆工艺的一部分被形成，以延伸电接触并在光电子装配件100的底侧创建I/O垫片180。将明白的是，可以根据各种光刻工艺制造RDL，并且可以利用本领域技术人员已知的底部凸块金属化(UBM)或其他金属化工艺制造任何I/O垫片。在一些实施例中，利用光刻胶处理暴露表面121的第一部分123，以阻止RDL形成在第一部分123上。然后，作为模压封装工艺的最后步骤移除光刻胶，从而暴露出PIC 120的顶部表面，用于光学附接到其他组件，从而保持第一部分123与外部光学器件耦合的能力。
EIC 150是用于处理电信号的芯片。这些信号可以包括发送到或接收自PIC 120或者发送到或接收自与光电子装配件100通信的外部电气组件(未示出)的模拟和数字信号。EIC 150经由柱式凸块160连接到PIC 120和中介层130。在各种实施例中，柱式凸块160是从EIC 150延伸出来以与PIC 120和中介层130上的接触垫片或插口耦合的引脚。在其他实施例中，柱式凸块160是从PIC 120和中介层130延伸出来的引脚，用于与EIC 150上的接触垫片或插口耦合。
构造的VIA 140提供光电子装配件100的底侧和光电子装配件100的顶侧之间的电气通道。一个或多个构造的VIA 140可以存在于光电子装配件100中，并且每个构造的VIA140可以包括从光电子装配件100的底侧到顶侧的一个或多个通道。如本公开中使用的，“顶部”、“顶侧”和相关术语是指光电子装配件100的将安装EIC 150的一侧。类似地，本公开使用术语“底部”、“底侧”和相关术语来指代光电子装配件100的相反侧，其中，外部连接170以阵列的形式布置在该底侧以使能光电子装配件安装或耦合其他电气组件。在各种方面，外部连接170是作为球栅阵列(Ball Grid Array,BGA)的部分的焊球或者可以是作为连接盘栅格阵列(Land Grid Array,LGA)的部分的引脚或插口。外部连接170通过制造在光电子装配件100底侧的一个或多个I/O垫片180而安装到光电子装配件100的底侧。在各种实施例中，I/O垫片180制造在光电子装配件100的底侧而作为RDL的部分。
无源组件190可以是可选地嵌入在模压化合物110中的离散组件，例如，电容器和电阻器。无源组件190可以与PIC 120、中介层130、构造的VIA 140、EIC 150、以及其他无源组件190电通信。尽管本公开给出的图示一般地示出了一个或较少的无源组件190，但是应该明白的是，更多无源组件190可以被包括在根据本公开做出的各种实施例中。
图2示出了突出示出中介层130中的内部VIA 133的示例光电子装配件100的侧视图。在本示例中，构造的VIA 140是嵌入在模压化合物110中的离散组件，但是VIA也可以通过中介层130的材料制造。内部VIA133提供了贯通外部连接170和I/O垫片180之间的光电子装配件100而经由柱式凸块160去往EIC 150的电气通道。EIC 150又经由柱式凸块中的其他连接器电气连接到PIC 120。
在中介层130包括内部VIA 133的一些实施例中，省去了构造的VIA140。在中介层130包括内部VIA 133的其他实施例中，包括构造的VIA140，以提供贯通光电子装配件100而去往内部VIA 133提供的通道的附加通道。内部VIA 133可以在光电子装配件100中的集成之前或者作为包括一个或多个光电子装配件100的重组晶圆上的扇出工艺中的化学气相沉积或金属化步骤的部分而构造在中介层130中(例如，硅通孔VIA中介层)。
图3A和3B示出了根据本公开的实施例的示例光电子装配件100的俯视图。图3A和3B示出了与中介层130和无源组件190连接的第一构造的VIA 140a和第二构造的VIA 140b，它们均嵌入在模压化合物110中。每个光电子装配件100还包括与中介层连接的EIC 150，但是图3A示出了连接到一个PIC 120的EIC 150，而图3B示出了连接到第一PIC 120a和第二PIC120b的EIC 150。因此，将理解的是，给定EIC 150可以连接到多个PIC120。
在各种实施例中，EIC 150可以连接到多个PIC 120，以根据不同的功率等级接收或发送具有不同波长的光信号，以及经由专用线缆接收或发送来自多个来源或去往多个目的地的光信号。例如，EIC 150可以经由第一PIC 120a接收光信号，并经由第二PIC 120b控制光信号的传输。在另一示例中，光电子装配件100可以经由第一PIC 120a接收第一波长的信号，并经由第二PIC 120b接收第二波长的信号。
图4A和4B示出了根据本公开的实施例的使用两个EIC 150的示例光电子装配件100的俯视图。图4A和4B示出了嵌入在模压化合物110中的各种PIC 120和中介层130。图4A示出了与中介层130和一个PIC 120连接的第一EIC 150a和第二EIC 150b。图4B示出了与中介层130和第一PIC120a连接的第一EIC 150a，与中介层130、第二PIC 120b、和第三PIC120c连接的第二EIC 150b。因此，将理解的是，给定中介层130可以与多个EIC150连接，每个EIC可以连接到一个或多个PIC 120。连接到中介层130的多个EIC 150中的每个EIC可以经由中介层130彼此电气连接，或者彼此隔离。将明白的是，EIC 150可以连接到一个以上中介层130。
在各种实施例中，中介层130连接到多个EIC 150，以执行各种功能。例如，第一EIC150a和第二EIC 150b可以连接到给定PIC 120，以例如经由处理模拟信号的第一EIC 150a和处理数字信号的第二EIC 150b对PIC120提供的信号进行不同处理。在另一示例中，第一EIC 150a驱动从第一PIC 120发送的传输，第二EIC 150b处理从第二PIC 120b接收的信号。另外，制造商可以利用多个EIC 150(而不是少量EIC 150)来适应预先存在的形式的EIC150或使用比单个EIC 150制造成本更低的多个EIC 150。
图5A和5B分别示出了根据本公开的一个实施例的使用第一桥接EIC150a和第二安装EIC 150b的示例光电子装配件100的俯视图和侧视图。在图5A和5B中，嵌入在模压化合物110中的中介层130和PIC 120由第一EIC 150a桥接，并且第二EIC 150b安装到中介层130。因此，将明白的是，光电子装配件100可以包括不将PIC 120与中介层130桥接的EIC 150。安装到中介层130的EIC 150不直接与PIC 120电气连接。在一些实施例中，这些安装的EIC150连接到其他EIC 150，这些其他EIC可以与PIC 120直接互连。安装的EIC 150还可以连接到光电子装配件的构造的VIA 150或无源组件190，或者可以连接到外部电气设备。
图6示出了概述根据本公开的一个实施例的制造光电子装配件100的示例方法600中的一般操作的流程图。与图7A-H示出的在光电子装配件100的制造期间创建的各种子装配件相关联地讨论方法600。
方法600开始于框610。在框610，形成包括用于光电子装配件100的至少一个晶粒的重组晶圆，其中，光电子装配件100包括至少一个PIC 120和至少一个中介层130。在各种实施例中，构造的VIA 140和无源组件190也被包括在至少一个晶粒中。各种PIC 120、中介层130、(可选的)构造的VIA 140、以及(可选的)无源组件190可以被布置在载体710上，如图7A所示，然后被嵌入在模压化合物110中，如图7B所示。应该注意的是，附加保护层可以被添加到PIC 120(或被包括在PIC设计中)，以保持模压化合物110处于指定区域外部。例如，为了保护光耦合接口，可以添加诸如沟槽、保护/牺牲层、或其他阻挡层的结构，以使模压化合物110远离这些区域或者允许在不损坏PIC 120的条件下移除模压化合物110。
载体710与将成为PIC 120的暴露表面121和中介层130的第一表面131的部分接触，这确保了暴露表面121和第一表面131共面(即，布置在一个平面上)，在最终的光电子装配件100的一侧(即，顶侧)，并且没有模压化合物110。相反，光电子装配件100的组件的底部表面背离载体710。载体710可以是带状或钢制载体，如本领域将理解的，光电子装配件100的组件(包括模压化合物110)临时键合到载体。一旦设置了用于形成重组晶圆的模压化合物110并且中介层130和PIC 120被嵌入其中，就可以使用湿蚀刻、激光释放、物理剥离、或化学释放工艺移除载体710。
一旦载体710被移除，就可以在暴露表面121、第一表面131、以及它们共享的平面中的其他表面/面上(例如，在光电子装配件100的顶侧)执行表面特征处理。例如，化学气相沉积、电镀、或其他类似处理可以添加用于经由柱式凸块160连接的焊垫或引脚，或者可以扇出RDL中的任意构造的VIA 140、中介层130、PIC 120、和/或无源组件190之间的电连接。
回到方法600，在框620，从重组晶圆的先前与载体710键合的一侧相反的“底”侧移除模压化合物110的一部分。在一些实施例中，移除足够多的模压化合物110，以暴露出中介层130的延伸到光电子装配件100的底侧的第二表面132和/或任何构造的VIA 140光电子；在光电子装配件100上留下暴露底部表面。例如，可以从底侧移除图7B示出的模压化合物110，以产生图7C示出的处理中的光电子装配件。在其他实施例中，移除的模压化合物110的量被设置为使得中介层130的第二表面132没有被暴露在光电子装配件100的底侧。例如，图1示出的光电子装配件100示出了包括中介层130的第二表面132和光电子装配件100的底侧之间(以及PIC120的底部表面和光电子装配件100的底侧之间)的模压化合物110的完工的光电子装配件100，其中，外部连接170附接到该光电子装配件。将明白的是，由于较薄的基底更容易开裂，所以可以基于最终的光电子装配件的期望机械特性来确定模压化合物110的厚度以及中介层130或PIC 120是否在顶侧和底侧暴露。
在框630，在重组晶圆的底侧形成RDL，以形成I/O垫片180。在各种方面，I/O垫片180被制造为与重组晶圆上存在的任意构造的VIA 140或集成VIA 133电气连接，但是也可以被制造在电气隔离的位置或者电气连接光电子装配件100底侧的其他组件。
图7C示出了具有形成在底侧的RDL层的进行中的光电子装配件100的示例。图7C示出了光电子装配件100的顶部表面没有模压化合物110，中介层130的第一表面131和PIC120的暴露表面121从该顶部表面在一个平面中与构造的VIA 140的一部分和无源组件190(它们可以共面也可以不共面)一起延伸。图7C还示出了光电子装配件100的底侧，其中，多个I/O垫片180制造在光电子装配件100的底侧。
另外，在一些实施例中，在框630，还在重组晶圆的顶侧形成RDL，以形成焊垫(或其他I/O连接，例如，插口或引脚)和/或扇出在重组晶圆顶侧具有暴露表面的组件(例如，中介层130和PIC 120)之间的电气连接。图7D示出了进行中的光电子装配件100的示例，其中，RDL层形成在光电子装配件100的底侧，第二RDL层形成在光电子装配件100的顶侧。图7D示出了光电子装配件100的顶部表面没有模压化合物110，其中，中介层130的第一表面131和PIC 120的暴露表面121从该顶部表面在一个平面中与构造的VIA 140的一部分和无源组件190(它们可以共面也可以不共面)一起延伸。图7D还示出了光电子装配件100的底侧，其中，多个I/O垫片180制造在光电子装配件100的底侧，多个I/O垫片180形成在中介层130的第一表面131和PIC 120的暴露表面121上。在一些方面，在形成重组晶圆之前，I/O垫片180被形成在中介层130的第一表面131和PIC120的暴露表面121中的一者或多者上。
在框640，将EIC 150键合到中介层130和PIC 120，如图7E所示。EIC 150经由柱式凸块160与中介层130和PIC 120耦合，柱式凸块160建立在中介层130的第一表面131和PIC120的暴露表面121上的I/O垫片和EIC 150之间。
继续进行到框650，将外部连接170安装到光电子装配件100的底侧。在各种实施例中，外部连接170包括将光电子装配件100电气地且物理地耦合到外部电气器件的焊球的BAG，如图7F所示。在其他实施例中，外部连接170包括LGA的引脚或插口。
在框660，将重构晶圆切割为具有预定形状的一个或多个光电子装配件100。图7G示出了包括光电子装配件100的若干晶粒的经过预切割的重组晶圆720的俯视图。如图7G所示，每个晶粒包括嵌入在模压化合物110中的共面PIC 120和中介层130，EIC 150与PIC和中介层130耦合，如图7H更详细地示出。图7H示出了一个光电子装配件100和多条切割线730的俯视图，其中，在切割线730处将经过预切割的重组晶圆720的周围模压化合物110从光电子装配件100的模压化合物110和其他组件切除。光电子装配件100准备好与外部电气器件(例如，经由外部连接170)和外部光学器件(例如，经由PIC 120的暴露表面121的第一部分123)耦合。注意，为了帮助PIC 120和外部光学组件之间的耦合，可以基于PIC设计和预期用途简介修改切割工艺。例如，如果期望将光学组件耦合到PIC 120的边缘，则可以将PIC 120的多个部分设计为在最终的切割步骤期间切除PIC 120的部分以提供暴露表面122作为用于耦合的光学表面。
方法600随后可以终止。
总之，提供了一种光电子装配件及其制造方法。该装配件的实施例包括：模压化合物；光子集成电路(PIC)，嵌入在模压化合物中，具有在第一平面中从模压化合物暴露出来的表面；中介层，嵌入在模压化合物中，具有在第一平面中从模压化合物暴露出来的表面(即，与PIC的暴露表面共面)；以及电气集成电路(EIC)，耦合到PIC的暴露表面和中介层的暴露表面，并建立PIC和中介层之间的桥接电气连接。
参考根据本公开呈现的实施例的方法、装置(系统)、和计算机程序产品的流程图和/或框图描述了本公开的实施例。将理解的是，流程图和/或框图的每个框以及流程图和/或框图中的框的组合可以由计算机程序指令实现。这些计算机程序指令可以被提供给通用计算机、专用计算机、或其他可编程数据处理装置的处理器以产生一种机器，从而使得经由计算机或其他可编程数据处理装置的处理器执行的指令创建用于实现流程图和/或框图中的一个或多个框中指定的功能/动作。
这些计算机程序指令也可以被存储在计算机可读存储介质中，该计算机可读存储介质可以引导计算机、其他可编程数据处理装置、或其他设备以特定方式工作，从而使得存储在计算机可读存储介质中的指令产生包括实现框图和/或流程图中的一个或多个框指定的功能/动作的指令的制品。
计算机程序指令也可以被加载到计算机、其他可编程数据处理装置、或其他设备上，以使得一系列操作步骤在计算机、其他可编程装置、或其他设备上执行从而产生计算机实现的过程，使得在计算机或其他可编程装置上执行的指令提供用于实现流程图和/或框图中的一个或多个框中指定的功能/动作的处理。
附图中的流程图和框图示出了根据各种实施例的系统、方法、和计算机程序产品的可能实现方式的架构、功能、和操作。在这方面，流程图或框图中的每个框可以表示模块或代码段或部分，该模块或代码段或部分包括用于实现一个或多个指定的逻辑功能的一个或多个可执行指令。还应该注意的是，在一些其他实现方式中，框中给出的功能可以不按照图中给出的顺序执行。例如，取决于涉及到的功能，连续示出的两个框实际上可以基本上同时执行，或者这些框有时可以按照相反的顺序执行。还应该注意的是，框图和/或流程图中的每个框以及框图和/或流程图中的框的组合可以由执行指定动作或功能的专用硬件系统实现或者由专用硬件和计算机指令的组合实现。
鉴于以上所述，本公开的范围由下面的权利要求确定。

Claims (20)

1.一种光电子装配件，包括：
模压化合物；
光子集成电路(PIC)，嵌入在所述模压化合物中，该PIC具有从所述模压化合物中暴露出来的表面；
中介层，嵌入在所述模压化合物中，该中介层具有从所述模压化合物中暴露出来并且与所述PIC的表面共面的表面；以及
电子集成电路(EIC)，耦合到所述PIC的从所述模压化合物中暴露出来的表面和所述中介层的从所述模压化合物中暴露出来的表面，该EIC包括所述PIC和所述中介层之间的桥接电气连接。
2.如权利要求1所述的光电子装配件，其中，所述PIC的从所述模压化合物中暴露出来的表面的第一部分与外部光学器件通信，并且其中，所述PIC的从所述模压化合物中暴露出来的表面的第二部分耦合到所述EIC。
3.如权利要求1或2所述的光电子装配件，进一步包括：
第二EIC，耦合到所述PIC的从所述模压化合物中暴露出来的表面和所述中介层的从所述模压化合物中暴露出来的表面。
4.如权利要求1至3中任一项所述的光电子装配件，进一步包括：
第二PIC，该第二PIC具有从所述模压化合物中暴露出来并且与所述PIC的表面共面的表面。
5.如权利要求1或2所述的光电子装配件，进一步包括：
第二PIC，该第二PIC具有从所述模压化合物中暴露出来并且与所述PIC的表面共面的表面；以及
第二EIC，耦合到所述第二PIC的从所述模压化合物中暴露出来的表面和所述中介层的从所述模压化合物中暴露出来的表面。
6.如权利要求1所述的光电子装配件，进一步包括：
第二EIC，安装到所述中介层的从所述模压化合物中暴露出来的表面并且与所述PIC电隔离。
7.如权利要求1至6中任一项所述的光电子装配件，进一步包括：
多个输入/输出(I/O)垫片，限定于所述光电子装配件的第二侧，该第二侧与所述PIC的从所述模压化合物中暴露出来的表面相反。
8.如权利要求7所述的光电子装配件，进一步包括：
焊球的球栅阵列，制造在所述多个I/O垫片上。
9.如权利要求1至8中任一项所述的光电子装配件，其中，所述中介层包括集成的垂直互连通路(VIA)，该VIA限定所述光电子装配件的底侧和所述中介层的从所述模压化合物中暴露出来的表面之间的电气通道。
10.如权利要求1至9中任一项所述的光电子装配件，进一步包括：
构造的垂直互连通路(VIA)，该VIA嵌入在所述模压化合物中，限定所述光电子装配件的底侧和所述中介层的从所述模压化合物中暴露出来的表面之间的电气通道；以及
重布线层，形成在所述第一平面上并且将所述构造的VIA电气地连接到所述中介层。
11.如权利要求1至10中任一项所述的光电子装配件，其中，所述中介层具有热膨胀系数(CTE)，该CTE与所述模压化合物的CTE相匹配。
12.如权利要求1至11中任一项所述的光电子装配件，进一步包括：
无源组件，嵌入在所述模压化合物中。
13.一种重组晶圆，包括：
模压化合物；
多个晶粒，嵌入在所述模压化合物中，所述多个晶粒中的每个晶粒包括：
光子集成电路(PIC)，嵌入在所述模压化合物中，具有无所述模压化合物的暴露表面；
中介层，嵌入在所述模压化合物中，具有无所述模压化合物并且与所述PIC的暴露表面共面的第一表面，并且具有无所述模压化合物并与所述第一表面相反的第二表面；以及
电子集成电路(EIC)，连接到所述PIC的暴露表面的一部分和所述中介层的所述第一表面的一部分。
14.如权利要求13所述的重组晶圆，进一步包括：
焊球的球栅阵列，被制造到所述中介层的所述第二表面，并且通过藉由多个集成的垂直互连通路(VIA)的通信而与所述EIC通信。
15.如权利要求13或14所述的重组晶圆，其中，所述PIC包括所述暴露表面的第二部分，所述第二部分没有所述EIC。
16.一种制造光电子装配件的方法，包括：
将光子集成电路(PIC)和中介层定位在载体上，其中，所述PIC具有暴露表面并且所述中介层具有与所述暴露表面共面的第一表面；
使用模压化合物封装所述PIC和所述中介层，以形成包括所述PIC和所述中介层的重组晶圆，所述重组晶圆具有与所述暴露表面共面的第一侧和与所述第一侧相反的第二侧，其中，所述模压化合物没有覆盖所述暴露表面和所述第一表面；
从所述第二侧移除所述模压化合物的一部分，以揭露出所述中介层的与所述第一表面相反的一部分；以及
将电子集成电路(EIC)与所述PIC表面和所述中介层表面键合，以电气地桥接所述PIC和所述中介层。
17.如权利要求16所述的方法，在键合所述EIC之前进一步包括：
在重布线层(RDL)中制造输入/输出(I/O)垫片，所述RDL位于所述重组晶圆的所述第二侧。
18.如权利要求17所述的方法，进一步包括：
在第二RDL中制造I/O垫片，所述第二RDL位于所述重组晶圆的所述第一侧，并在所述中介层的所述第一表面和所述PIC的所述暴露表面上。
19.如权利要求17或18所述的方法，进一步包括：
在所述重组晶圆的所述第二侧安装外部连接，其中，所述外部连接包括球栅阵列和连接盘栅格阵列中的一者。
20.如权利要求16至19中任一项所述的方法，进一步包括：
切割所述重组晶圆，以生产包括所述PIC、所述中介层、以及所述EIC的至少一个晶粒。
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