CN112002646A - 一种半导体封装工艺 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000012858 packaging process Methods 0.000 title claims abstract description 13
- 238000007747 plating Methods 0.000 claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 239000004033 plastic Substances 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000001746 injection moulding Methods 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 claims description 5
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 235000013619 trace mineral Nutrition 0.000 claims description 2
- 239000011573 trace mineral Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- 239000002910 solid waste Substances 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
本发明涉及半导体封装的技术领域,特别是涉及一种半导体封装工艺,具有良品率高,生产效率高,并且节省电能以及原材料的优点;包括以下步骤:S1、通过冲压成型方式,形成半导体引线框架;S2、对半导体引线框架表面进行镀锡镀镍特殊表层处理;S3、在半导体引线框架表面均匀制作焊盘;S4、通过注塑方式在半导体引线框架边缘区域形成塑胶框架;S5、将芯片贴在半导体引线框架的中部;S6、焊线焊接;S7、滴胶盖帽:使用点胶机将改性环氧树脂分子滴在芯片处,使胶将芯片、焊线以及焊盘覆盖住,然后进行冷却;S8、打标、测试后封管。
Description
技术领域
本发明涉及半导体封装的技术领域,特别是涉及一种半导体封装工艺。
背景技术
众所周知,目前半导体传感芯片引线框架表面处理采用镀银镀金工艺,具有以下缺点:一是氰化物在电镀工艺中起到络合的作用,使之在阴极得到电子沉积下来,有氰化物络合使镀层细密光滑,成品质量较高,氰化物和目标金属离子形成的络合物在阴极附近聚集,形成阴极极化的效果,阴极极化程度越高越好,传统引线框架表面处理采用镀银镀金氰化电镀工艺,氰化物在生产过程中所产生的废气可危害生命,氰化物有固废,废液,废气等,国家环保提倡电镀工艺为微氰电镀及无氰电镀,固废和液废都非常难收回;二是金线成本高,辅材投入大,半导体封装后端设备投入巨大,模压效率低。
发明内容
为解决上述技术问题,本发明提供一种半导体封装工艺,具有良品率高,生产效率高,并且节省电能以及原材料的优点。
本发明的一种半导体封装工艺,包括以下步骤:
S1、通过冲压成型方式,形成半导体引线框架;
S2、对半导体引线框架表面进行镀锡镀镍特殊表层处理;
S3、在半导体引线框架表面均匀制作焊盘;
S4、通过注塑方式在半导体引线框架边缘区域形成塑胶框架;
S5、将芯片贴在半导体引线框架的中部;
S6、焊线焊接;
S7、滴胶盖帽:使用点胶机将改性环氧树脂分子滴在芯片处,使胶将芯片、焊线以及焊盘覆盖住,然后进行冷却;
S8、打标、测试后封管。
本发明的一种半导体封装工艺,所述步骤S6以及S7中焊线以纯金为基础,添加合金,并加入多种微量元素。
本发明的一种半导体封装工艺,所述步骤S7中改性环氧树脂分子内部添加凝固催化剂,并且滴胶处于负压环境下。
本发明的一种半导体封装工艺,所述步骤S2中镀锡采用甲基磺酸锡工艺,镀镍采用氨基磺酸镍工艺。
与现有技术相比本发明的有益效果为:第一、新工艺采用镀锡镀镍,甲基磺酸锡、氨基磺酸镍工艺不需要氰化物络合,属于无氰电镀工艺,镀锡:增进焊接能力,镀镍:增进抗蚀能力及耐磨能力;第二、通过对环氧树脂分子改性,其冲击强度、拉伸度、耐温、搞疲劳等等提高,并掺入凝固催化剂抽真空,使整体工艺时间缩短,点胶成形,固化后形成完整平面,后段直接打标、测试封管,节省后段模压设备投入及其工艺时间和能源损耗;第三、新型焊线在纯金材料的基础上采用多元掺杂合金,加入多种微量稀有金属元素,减少金属化合物的形成,同时阻止界面氧化物和断裂的产生,降低了结合性能的退化,达到传统性能同样的稳定性。键合为降低电力损耗,新型焊线具有较高的相对导电性和良好的受电性,提高抗拉强度,抗软化温度,贯通晶圆片的互连,它通过直接钻过裸电绑定焊盘,为连接绑定焊盘提供了最短的路径,然后把导电材料与通孔连接起来,允许焊球从裸片绑定焊盘被重新分布,以满足裸片边缘标准和定制球形的要求。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例:
S1、通过冲压成型方式,形成半导体引线框架;
S2、对半导体引线框架表面进行镀锡镀镍特殊表层处理,镀锡采用甲基磺酸锡工艺,镀镍采用氨基磺酸镍工艺;
S3、在半导体引线框架表面均匀制作焊盘;
S4、通过注塑方式在半导体引线框架边缘区域形成塑胶框架;
S5、将芯片贴在半导体引线框架的中部;
S6、焊线焊接;
S7、滴胶盖帽:负压环境下,使用点胶机将改性环氧树脂分子和凝固催化剂滴在芯片处,使胶将芯片、焊线以及焊盘覆盖住,然后进行冷却;
S8、打标、测试后封管。
对比例:
S1、通过冲压成型方式,形成半导体引线框架;
S2、对半导体引线框架表面进行镀锡镀镍特殊表层处理,镀锡采用甲基磺酸锡工艺,镀镍采用氨基磺酸镍工艺;
S3、在半导体引线框架表面均匀制作焊盘;
S4、通过注塑方式在半导体引线框架边缘区域形成塑胶框架;
S5、将芯片贴在半导体引线框架的中部;
S6、焊线焊接;
S7、模压处理;
S8、去除多余塑料;
S9、打标、测试后封管。
使用实施例以及对比例制取芯片1000片,得到如下数据:
通过上述数据得知,本发明的方法具有良品率高,生产效率高,并且节省电能以及原材料的优点。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,这些改进和变型也应视为本发明的保护范围。
Claims (4)
1.一种半导体封装工艺,其特征在于,包括以下步骤:
S1、通过冲压成型方式,形成半导体引线框架;
S2、对半导体引线框架表面进行镀锡镀镍特殊表层处理;
S3、在半导体引线框架表面均匀制作焊盘;
S4、通过注塑方式在半导体引线框架边缘区域形成塑胶框架;
S5、将芯片贴在半导体引线框架的中部;
S6、焊线焊接;
S7、滴胶盖帽:使用点胶机将改性环氧树脂分子滴在芯片处,使胶将芯片、焊线以及焊盘覆盖住,然后进行冷却;
S8、打标、测试后封管。
2.如权利要求1所述的一种半导体封装工艺,其特征在于,所述步骤S6以及S7中焊线以纯金为基础,添加合金,并加入多种微量元素。
3.如权利要求2所述的一种半导体封装工艺,其特征在于,所述步骤S7中改性环氧树脂分子内部添加凝固催化剂,并且滴胶处于负压环境下。
4.如权利要求3所述的一种半导体封装工艺,其特征在于,所述步骤S2中镀锡采用甲基磺酸锡工艺,镀镍采用氨基磺酸镍工艺。
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Citations (6)
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JPH0888242A (ja) * | 1994-09-16 | 1996-04-02 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤー |
CN201655791U (zh) * | 2009-06-04 | 2010-11-24 | 李同乐 | 高密度接点的无引脚集成电路元件 |
CN103000773A (zh) * | 2011-09-13 | 2013-03-27 | 复盛精密工业股份有限公司 | 发光二极管的支架结构及其制作方法 |
CN104167413A (zh) * | 2014-08-26 | 2014-11-26 | 桂林电子科技大学 | 一种引线框架式大功率led光源模组及其封装方法 |
US20150259813A1 (en) * | 2012-09-19 | 2015-09-17 | Jx Nippon Mining & Metals Corporation | Surface treated plating material and method for producing the same, and electronic components |
CN110845825A (zh) * | 2019-10-22 | 2020-02-28 | 艾森半导体材料(南通)有限公司 | 一种led封装用纳米二氧化硅改性环氧树脂组合物 |
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- 2020-08-25 CN CN202010866703.8A patent/CN112002646A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0888242A (ja) * | 1994-09-16 | 1996-04-02 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤー |
CN201655791U (zh) * | 2009-06-04 | 2010-11-24 | 李同乐 | 高密度接点的无引脚集成电路元件 |
CN103000773A (zh) * | 2011-09-13 | 2013-03-27 | 复盛精密工业股份有限公司 | 发光二极管的支架结构及其制作方法 |
US20150259813A1 (en) * | 2012-09-19 | 2015-09-17 | Jx Nippon Mining & Metals Corporation | Surface treated plating material and method for producing the same, and electronic components |
CN104167413A (zh) * | 2014-08-26 | 2014-11-26 | 桂林电子科技大学 | 一种引线框架式大功率led光源模组及其封装方法 |
CN110845825A (zh) * | 2019-10-22 | 2020-02-28 | 艾森半导体材料(南通)有限公司 | 一种led封装用纳米二氧化硅改性环氧树脂组合物 |
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Application publication date: 20201127 |