CN111987192B - Method for packaging quaternary LED chip - Google Patents
Method for packaging quaternary LED chip Download PDFInfo
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- CN111987192B CN111987192B CN201910427143.3A CN201910427143A CN111987192B CN 111987192 B CN111987192 B CN 111987192B CN 201910427143 A CN201910427143 A CN 201910427143A CN 111987192 B CN111987192 B CN 111987192B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 27
- 229910052738 indium Inorganic materials 0.000 claims abstract description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 9
- 239000011324 bead Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000011049 filling Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052709 silver Inorganic materials 0.000 abstract description 11
- 239000004332 silver Substances 0.000 abstract description 11
- 239000000853 adhesive Substances 0.000 abstract description 10
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- 238000001035 drying Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a method for packaging a quaternary LED chip, which belongs to the technical field of photoelectronics and comprises the following steps: growing an epitaxial layer on a GaAs substrate, and preparing a P electrode and an N electrode; cutting the chip on the P surface to form a cutting path; plating a layer of indium on the N surface of the chip, and completely cutting the chip along the cutting path; placing the N surface of the chip on a packaging support, and baking by using an oven to connect the N electrode with the negative electrode of the packaging support; and connecting the P electrode with the anode of the packaging support by using a metal wire, coating and filling epoxy resin glue around the N electrode of the chip, and putting the chip into a drying oven for heating and curing to obtain the packaged quaternary LED chip lamp bead. The invention fundamentally avoids the problem of electric leakage caused by the fact that the conductive silver adhesive is adsorbed to the side face of the chip, and meanwhile, the finally used epoxy resin adhesive is also insulated, so that the electric leakage condition is effectively avoided.
Description
Technical Field
The invention relates to a method for packaging a quaternary LED chip, belonging to the technical field of photoelectronics.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
In the last 50 s of the century, group III-V semiconductors, typified by GaAs, have rapidly risen in the field of semiconductor light emission under the efforts of a number of well-known Research institutes, typified by IBM Thomas j. With the advent of Metal Organic Chemical Vapor Deposition (MOCVD) technology, high quality III-V semiconductor growth has broken through the technological barrier, and semiconductor light emitting diode devices of various wavelengths have been in the market in succession. Compared with the existing light-emitting devices, the semiconductor light-emitting diode has the characteristics of high efficiency, long service life, strong mechanical impact resistance and the like, and is considered as a new generation of lighting device worldwide.
When the quaternary LED chip is packaged into the LED lamp bead, the N surface of the chip is stuck on a packaging support by conductive silver adhesive, and the P surface is connected and conducted by welding wires according to the characteristics of the LED chip in the conventional packaging method. At the present stage, the requirements on the parameters of the light-emitting diode chip are higher and higher, the brightness of the quaternary LED chip is higher and higher, the thickness of the quaternary LED chip for better heat dissipation of a chip manufacturer is thinner and thinner, the requirement on coating of conductive silver adhesive is higher and higher, and if the silver adhesive is too much in the dispensing process, the silver adhesive covers the epitaxial layer on the side surface of the chip, and finally, the electric leakage phenomenon of a packaged finished product is caused.
At the present stage, packaging manufacturers do not wish to use a chip with an excessively thin thickness in order to avoid the phenomenon of electric leakage caused by silver paste, the requirement for heat dissipation of the chip is higher and higher due to the higher and higher brightness of the chip, the thinning of the chip is inevitably required, and how to avoid the phenomenon that conductive silver paste covers the epitaxial layer on the side face of the quaternary LED chip under the condition of thinning of the chip is a main reason for restricting the current chip lifting parameters.
Disclosure of Invention
Aiming at the defect of electric leakage caused by conductive silver adhesive in the existing quaternary LED chip packaging method, the invention provides the quaternary LED chip packaging method which has simple and convenient flow, does not use the conductive silver adhesive and does not generate electric leakage of lamp beads due to packaging.
The invention adopts the following technical scheme:
a packaging method of a quaternary LED chip comprises the following steps:
(1) growing an epitaxial layer of a quaternary LED chip on a GaAs substrate, and preparing a P electrode and an N electrode of the quaternary LED chip by conventional P-surface metal deposition, P electrode photoetching, thinning and N-surface metal deposition methods;
(2) performing P-surface cutting on the quaternary LED chip prepared in the step (1) by using a diamond cutter, forming a cutting channel between adjacent P electrodes, wherein the cutting channel penetrates through the epitaxial layer of the quaternary LED chip and extends to the GaAs substrate, the quaternary LED chip is not completely cut at the moment, and the chips separated by the cutting channel are tested to obtain the photoelectric parameters of the chips, and the photoelectric parameters of the chips can be tested by adopting a conventional method, such as placing the chips on a photoelectric parameter test bench for testing, and the like, which is not described herein again;
(3) plating a layer of indium on the N surface (namely an N electrode) of the quaternary LED chip prepared in the step (2), and cutting the chip along the cutting path to obtain a single quaternary LED chip, thereby fundamentally avoiding the problem of electric leakage caused by the adsorption of the traditional conductive silver adhesive on the side surface of the chip;
(4) placing the N surface of the quaternary LED chip prepared in the step (3) on a packaging support (the packaging support is the existing one), enabling indium to be in contact with metal of the packaging support, baking the packaging support by using an oven, fusing the indium with the metal on the packaging support at high temperature, and fixing the quaternary LED chip on the packaging support, so that an N electrode of the LED chip is connected with a cathode of the packaging support;
(5) and (2) connecting the P electrode of the light-emitting diode chip with the anode of the packaging support by using a metal wire, and then coating, filling and packaging epoxy resin glue around the contact part of the N electrode of the light-emitting diode chip and the packaging support, so that the electric leakage condition is effectively avoided, heating the support in an oven, and curing the epoxy resin glue to obtain the packaged quaternary LED chip lamp bead.
Preferably, the cutting lines in the step (2) are preferably strip-shaped structures, are distributed around the P electrode, and have a width of 15-25 μm.
Preferably, the cutting depth of the cutting channel in the step (2) is 1/4 chip thickness-1/2 chip thickness, wherein the chip thickness includes the thickness of the GaAs substrate and the epitaxial layer.
Preferably, the thickness of indium in step (3) is preferably 1.5 to 2.5. mu.m.
Preferably, the baking temperature of the oven in the step (4) is 180-.
Preferably, the heating temperature of the oven in the step (5) is 120-.
Preferably, the metal wire in step (5) is a gold wire or an aluminum wire.
The present invention is not described in detail, and the prior art can be adopted.
The invention has the beneficial effects that:
the invention plates indium film on N surface of the quaternary LED chip, separates the quaternary LED chip completely, then connects N surface (cathode) of the LED chip with the cathode of the packaging bracket by means of metal fusion of indium and the packaging bracket at high temperature, fundamentally eliminates the problem of electric leakage caused by the adsorption of the conductive silver glue on the side surface of the chip, and simultaneously the finally used epoxy resin glue is also insulated, thereby effectively avoiding the occurrence of electric leakage, the method has simple operation, and under the condition of not influencing the production efficiency, the lamp pearl yields are higher.
Drawings
FIG. 1 is a cross-sectional view of a quad LED chip fabricated in step (2) in an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a quad LED chip manufactured in step (3) according to an embodiment of the present invention;
in the figure, 1-GaAs substrate, 2-epitaxial layer, 3-P electrode, 4-scribe line, 5-N electrode.
The specific implementation mode is as follows:
in order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific examples, but not limited thereto, and the present invention is not described in detail and is in accordance with the conventional techniques in the art.
Example 1:
a packaging method of a quaternary LED chip comprises the following steps:
(1) growing a quaternary LED chip epitaxial layer 2 on a GaAs substrate 1, and preparing a P electrode 3 and an N electrode 5 of the quaternary LED chip by conventional P-surface metal deposition, P electrode photoetching, thinning and N-surface metal deposition methods;
(2) performing P-surface cutting on the quaternary LED chip prepared in step (1), as shown in fig. 1, forming a cutting channel 4 between adjacent P electrodes 3, wherein the cutting channel 4 penetrates through the epitaxial layer 2 of the quaternary LED chip and extends to the GaAs substrate 1, and is not completely cut at this time, and testing the chips separated by the cutting channel to obtain the photoelectric parameters of the chips, which can be tested by a conventional method, for example, placing the chips on a photoelectric parameter testing platform for testing, and the like, and will not be described herein again;
(3) plating a layer of indium on the N surface (namely the N electrode 5) of the quaternary LED chip prepared in the step (2), and cutting the chip along the cutting path to obtain a single quaternary LED chip, as shown in figure 2, thereby fundamentally avoiding the problem of electric leakage caused by the adsorption of the traditional conductive silver adhesive on the side surface of the chip;
(4) placing the N surface of the quaternary LED chip prepared in the step (3) on the existing packaging support, enabling the indium to be in contact with the metal of the packaging support, baking the quaternary LED chip by using an oven, fusing the indium with the metal on the packaging support at high temperature, and fixing the quaternary LED chip on the packaging support, so that an N electrode 5 of the LED chip is connected with the cathode of the packaging support;
(5) and (2) connecting the P electrode of the light-emitting diode chip with the anode of the packaging support by using a metal wire, and then coating, filling and packaging epoxy resin glue around the contact part of the N electrode of the light-emitting diode chip and the packaging support, so that the electric leakage condition is effectively avoided, heating the support in an oven, and curing the epoxy resin glue to obtain the packaged quaternary LED chip lamp bead.
Example 2:
a method for packaging a quaternary LED chip, as shown in embodiment 1, except that in step (2), the scribe lines 4 are in a stripe structure, are distributed around the P-electrode, and have a width of 20 μm, and the scribe lines 4 have a scribe depth of 1/2 chip thickness (including the thickness of the GaAs substrate and the epitaxial layer).
Example 3:
a method for packaging a quaternary LED chip, as shown in embodiment 1, except that in step (3) the thickness of indium is 2 μm;
the baking temperature of the baking oven in the step (4) is 180-220 ℃, and the baking time is 40-60 minutes;
the heating temperature of the baking in the oven in the step (5) is 120-150 ℃, and the heating time is 60-90 minutes.
Example 4:
a method for packaging a quaternary LED chip, as shown in embodiment 1, except that the metal wire in step (5) is a gold wire.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A method for packaging a quaternary LED chip is characterized by comprising the following steps:
(1) growing a quaternary LED chip epitaxial layer on the GaAs substrate, and preparing a P electrode and an N electrode of the quaternary LED chip;
(2) p-surface cutting is carried out on the quaternary LED chip manufactured in the step (1), a cutting channel is formed between adjacent P electrodes, the cutting channel penetrates through the epitaxial layer of the quaternary LED chip and extends to the GaAs substrate, and the chips separated by the cutting channel are tested to obtain the photoelectric parameters of the chips;
(3) plating a layer of indium on the N surface of the quaternary LED chip prepared in the step (2), and cutting the chip along the cutting path to obtain a single quaternary LED chip;
(4) placing the N surface of the quaternary LED chip prepared in the step (3) on a packaging support, enabling indium to be in contact with metal of the packaging support, baking the quaternary LED chip by using an oven, enabling the indium to be fused with the metal on the packaging support, and fixing the quaternary LED chip on the packaging support, so that an N electrode of the LED chip is connected with a cathode of the packaging support;
(5) connecting a P electrode of the light-emitting diode chip with the anode of a packaging support by using a metal wire, coating, filling and packaging epoxy resin glue around the contact of an N electrode of the light-emitting diode chip and the packaging support, putting the support into an oven for heating, and curing the epoxy resin glue to obtain a packaged quaternary LED chip lamp bead;
the cutting depth of the cutting path in the step (2) is 1/4 chip thickness-1/2 chip thickness.
2. The method for packaging a quaternary LED chip according to claim 1, wherein the width of the scribe line in step (2) is 15-25 μm.
3. The method for packaging a quaternary LED chip according to claim 1, wherein the thickness of indium in step (3) is 1.5-2.5 μm.
4. The method for encapsulating the quaternary LED chip as claimed in claim 1, wherein the baking temperature of the oven in the step (4) is 180-220 ℃ and the baking time is 40-60 minutes.
5. The method for encapsulating the quaternary LED chip according to claim 1, wherein the heating temperature of the oven in the step (5) is 120-150 ℃ and the heating time is 60-90 minutes.
6. The method for packaging a quaternary LED chip according to claim 1, wherein the metal wires in step (5) are gold wires or aluminum wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910427143.3A CN111987192B (en) | 2019-05-22 | 2019-05-22 | Method for packaging quaternary LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910427143.3A CN111987192B (en) | 2019-05-22 | 2019-05-22 | Method for packaging quaternary LED chip |
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| CN111987192A CN111987192A (en) | 2020-11-24 |
| CN111987192B true CN111987192B (en) | 2022-02-18 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106467A (en) * | 1993-10-05 | 1995-04-21 | Nec Corp | Optical semiconductor device and its manufacture |
| JP2000261042A (en) * | 1999-03-05 | 2000-09-22 | Toshiba Corp | Semiconductor light emitting element and manufacture of the same |
| CN101030616A (en) * | 2007-03-21 | 2007-09-05 | 山东华光光电子有限公司 | Production of high-brightness light-emitting diodes chip |
| CN103117334A (en) * | 2011-11-17 | 2013-05-22 | 山东浪潮华光光电子股份有限公司 | GaN-based light emitting diode (LED) chips in vertical structure and manufacturing method thereof |
| CN103563100A (en) * | 2011-08-02 | 2014-02-05 | 东芝技术中心有限公司 | High temperature gold-free wafer bonding for light emitting diodes |
| CN104518066A (en) * | 2013-09-30 | 2015-04-15 | 佛山市国星光电股份有限公司 | LED device with transition substrates and packaging method of LED device |
-
2019
- 2019-05-22 CN CN201910427143.3A patent/CN111987192B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106467A (en) * | 1993-10-05 | 1995-04-21 | Nec Corp | Optical semiconductor device and its manufacture |
| JP2000261042A (en) * | 1999-03-05 | 2000-09-22 | Toshiba Corp | Semiconductor light emitting element and manufacture of the same |
| CN101030616A (en) * | 2007-03-21 | 2007-09-05 | 山东华光光电子有限公司 | Production of high-brightness light-emitting diodes chip |
| CN103563100A (en) * | 2011-08-02 | 2014-02-05 | 东芝技术中心有限公司 | High temperature gold-free wafer bonding for light emitting diodes |
| CN103117334A (en) * | 2011-11-17 | 2013-05-22 | 山东浪潮华光光电子股份有限公司 | GaN-based light emitting diode (LED) chips in vertical structure and manufacturing method thereof |
| CN104518066A (en) * | 2013-09-30 | 2015-04-15 | 佛山市国星光电股份有限公司 | LED device with transition substrates and packaging method of LED device |
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