CN115980538A - Light emitting diode chip aging test method suitable for chip factory - Google Patents
Light emitting diode chip aging test method suitable for chip factory Download PDFInfo
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- CN115980538A CN115980538A CN202310126320.0A CN202310126320A CN115980538A CN 115980538 A CN115980538 A CN 115980538A CN 202310126320 A CN202310126320 A CN 202310126320A CN 115980538 A CN115980538 A CN 115980538A
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Abstract
The invention discloses an aging test method of a light-emitting diode chip suitable for a chip factory, which comprises the following steps: fixing an N-side electrode of a light-emitting diode chip to be tested on a metal support; and connecting the P-side electrode of the light-emitting diode chip with a connecting lead, and then sealing the light-emitting diode chip in the inner cavity of the sealing cover. Connecting a support cathode and a support anode with a power supply, recording the obtained voltage, brightness and wavelength parameters as initial parameters, wherein the test current is the rated current of the light-emitting diode chip; then, increasing the current to the test current for accelerated aging; and after the test is finished, regulating to rated current again for testing, recording the obtained parameters of voltage, brightness and wavelength, and recording as the parameters after the aging test. And comparing the initial parameters with the changes of the parameters after the aging test, and judging whether the light-emitting diode chip meets the requirements. The aging test method can be used for simply, conveniently and efficiently aging the packaged light-emitting diode chip in a chip factory.
Description
Technical Field
The invention relates to the technical field of semiconductor chip aging tests, in particular to a light-emitting diode chip aging test method suitable for a chip factory.
Background
The information disclosed in this background of the invention is only for the purpose of increasing an understanding of the general background of the invention and is not necessarily to be construed as an admission or any form of suggestion that this information forms the prior art that is already known to a person skilled in the art.
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
In the last 50 s, group III-V semiconductors, typified by GaAs, have rapidly grown in the field of semiconductor light emission under the efforts of a number of well-known Research institutions, typified by IBM Thomas j. With the advent of Metal Organic Chemical Vapor Deposition (MOCVD) technology, high quality III-V semiconductor growth has broken through the technological barrier, and semiconductor light emitting diode devices of various wavelengths have been in the market in succession. Compared with the existing light-emitting devices, the semiconductor light-emitting diode has the characteristics of high efficiency, long service life, strong mechanical impact resistance and the like, and is considered as a new generation of lighting device worldwide.
Due to the characteristics of GaAs-based light-emitting diode chips, downstream packaging manufacturers need to perform conventional accelerated aging tests on GaAs-based LED epitaxial wafers obtained after the GaAs-based light-emitting diode chips are packaged to confirm performance parameters, if the aging process is confirmed after the GaAs-based LED epitaxial wafers are packaged into lamp beads, the packaging sections are wasted, so the downstream packaging manufacturers can put forward conventional aging requirements of the chips to the chip manufacturers, and at the present stage, the chip manufacturers consider the factors in the aspects of cost and the like, and if the chip manufacturers set up packaging lines, only the bare chips are actually aged. For example, chinese patent document CN101021547A discloses a bare chip test and burn-in screening temporary package carrier, which includes an electrical interconnection substrate and a fixture for providing mechanical support for an electrode interconnection substrate. The method mainly comprises the steps of carrying out all tests and aging screening on the bare chips one by one through a clamp, however, the aging of the bare chips is completely different from the aging after packaging, so that the related results have no large reference, and the method cannot be suitable for GaAs-based light-emitting diode chips at the present stage. In addition, the current GaAs-based light emitting diode chip has smaller and smaller size and thinner thickness, and the GaAs-based light emitting diode chip is fragile, the elastic cover plate in the fixture used in the above patent document easily crushes the chip, and the temporary package carrier cannot be used for testing after the chip size is smaller and smaller. Therefore, how to simply and effectively carry out the aging test of the packaged light-emitting diode chip in a chip factory becomes a key problem for overcoming the divergence between the packaging factory and the chip factory.
Disclosure of Invention
In view of this, the present invention provides a method for testing the aging of a light emitting diode chip suitable for a chip factory, which can perform a simple and efficient aging test on the packaged light emitting diode chip in the chip factory, and can rapidly recover the chip to a bare chip state after the test is completed. In order to achieve the above purpose, the present invention discloses the following technical solutions.
A light emitting diode chip aging test method suitable for chip factories comprises the following steps:
(1) Providing a test device comprising: metal support, support negative pole, support positive pole, connecting wire and enclosure. Wherein: and the cathode of the support is fixed on the outer wall of the metal support. The positive pole of the support is positioned outside the metal support, the first end of the connecting wire is connected with the positive pole of the support, and the second end of the connecting wire penetrates through the sealing cover and then extends into the inner cavity of the sealing cover.
(2) And fixing the N-side electrode of the light-emitting diode chip to be tested on the upper surface of the metal support. And connecting the P-surface electrode of the light-emitting diode chip with the second end of the connecting lead, covering the sealing cover on the upper surface of the metal support, and sealing the light-emitting diode chip in the inner cavity of the sealing cover.
(3) And switching on a power supply to the cathode of the support and the anode of the support, recording the obtained voltage, brightness and wavelength parameters as initial parameters, wherein the test current is the rated current of the light-emitting diode chip. The current is then increased to a test current and the led chips are left on for a period of time to accelerate aging. And after the test is finished, adjusting the voltage to the rated current again for testing, recording the obtained parameters of voltage, brightness and wavelength, and recording the parameters as the parameters after the aging test.
(4) And comparing the initial parameters with the changes of the parameters after the aging test, and judging whether the light-emitting diode chip meets the requirements.
Further, in the step (1), the metal support is fixed on the support, and optionally, the thickness of the metal support is between 500 and 700 μm.
Further, in the step (1), the material of the cover is epoxy resin. Optionally, the enclosure has a thickness of between 100 and 200 um.
Further, in the step (2), the light emitting diode chip is placed on the upper surface of the metal support, and then baking is carried out to enable the N-side electrode of the light emitting diode chip to be bonded with the metal support.
Further, the baking temperature is between 250 and 270 ℃, and the baking time is between 60 and 90 min.
Further, in the step (3), the test current is 1.2 to 1.5 times of the rated current.
Further, in the step (3), the continuous lighting time is 17 to 48 hours.
Further, in the step (4), if the voltage variation is less than +/-0.05 v, the wavelength variation is less than +/-0.3 nm, and the brightness variation is less than +/-5%, the quality of the tested light emitting diode chip is qualified.
Further, in the step (4), after the parameter recording is finished after the aging test, the sealing cover is directly taken down, and then the N-surface electrode of the light-emitting diode chip is separated from the metal support, so that the light-emitting diode chip can be recycled, the waste is avoided, and meanwhile, the testing device can be reused.
Compared with the prior art, the invention has the following beneficial effects: the aging test method for the light-emitting diode chip can reproduce simple and efficient aging test on the packaged light-emitting diode chip in a chip factory, and can quickly restore the chip to a bare chip state after the test is finished, so that the complicated packaging procedure of the chip, which is required by the chip factory to carry out more real aging test, is avoided under the condition of providing more reliable test data for downstream packaging factories, and the divergence between the packaging factory and the chip factory is well overcome.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
Fig. 1 is a schematic structural diagram of an led chip burn-in testing apparatus suitable for chip factories in the following embodiments. Wherein the numerical designations represent: 1-metal support, 2-support cathode, 3-support anode, 4-connecting lead, 5-sealing cover, 6-N electrode and 7-P electrode.
Detailed Description
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
For convenience of description, the words "up", "down", "left" and "right" in the present invention, if any, merely indicate that the directions of movement are consistent with those of the drawings, and do not limit the structure, but merely facilitate the description of the invention and simplify the description, rather than indicate or imply that the referenced device or element needs to have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention. The method for testing the led chip by burn-in according to the present invention will be further described with reference to the drawings and specific embodiments.
A method for burn-in testing of a light emitting diode chip suitable for a chip factory is carried out by using the burn-in testing device shown in figure 1. Specifically, the method comprises the following steps:
referring to fig. 1, the burn-in test apparatus includes: metal support 1, support negative pole 2, support positive pole 3, connecting wire 4 and cover 5. Wherein: the support cathode 2 is fixed to the outer wall of the metal support (made of an alloy of copper, gold, indium, and tin) 1. Anodal 3 of support is located 1 outsidely of metal support, connecting wire 4's first end is connected with anodal 3 of support, and connecting wire 4's second end passes and extends to in its inner chamber behind the cover 5, just sealing connection between connecting wire 4 and the cover 5. The thickness of the metal support 1 can be randomly selected from 500-700 μm, such as 500 μm, 600 μm, 700 μm and the like. In addition, the metal holder 1 may be fixed to a bracket so that the metal holder 1 is supported. The material of the enclosure 5 is epoxy resin. The thickness of the enclosure 5 is between 100-200 um, such as 100 μm, 150 μm, 200 μm, etc.
The manufacturer (chip factory) of the chips performs a burn-in test of the led chips with the testing apparatus shown in fig. 1 to evaluate whether the led chips in a certain batch are qualified. And taking a GaAs-based light-emitting diode chip as a test sample, and randomly selecting the chip with the proportion of 0.1-0.2%. During testing:
(1) Vertically placing a certain GaAs-based light-emitting diode chip in the sample on the upper surface of the metal support 1, and attaching an N-surface electrode 6 of the GaAs-based light-emitting diode chip to the upper surface of the metal support 1. And then, the combination of the metal support 1 and the GaAs-based light-emitting diode chip is placed in an oven for baking, so that the N-surface electrode 6 of the GaAs-based light-emitting diode chip is bonded with the upper surface of the metal support 1 by utilizing the characteristic that indium and tin in the metal support 1 can be softened and bonded at high temperature. The baking temperature can be arbitrarily selected between 250 ℃ and 270 ℃, and the baking time is between 60 and 90min, for example, baking at 250 ℃ for 90min, baking at 260 ℃ for 70min, baking at 270 ℃ for 60min, and the like.
(2) And after baking, cooling to room temperature, taking the metal support 1 carrying the GaAs-based light-emitting diode chip out of the oven, connecting a P-surface electrode 7 of the GaAs-based light-emitting diode chip with a second end of a connecting wire 4, covering the upper surface of the metal support 1 with the enclosure 5, and sealing the GaAs-based light-emitting diode chip in the inner cavity of the enclosure 5.
(3) And switching on the support cathode 2 and the support anode 3, wherein the test current is the rated current I of the GaAs-based light-emitting diode chip, and recording the obtained voltage, brightness and wavelength parameters as initial parameters. Then, the current is increased to a test current = (1.2 to 1.5) × I, such as 1.2I, 1.3I, 1.4I, 1.5I, etc., and the GaAs-based light emitting diode chip is continuously lit for a period of time, such as 17 to 48 hours, such as 17 hours, 20 hours, 25 hours, 30 hours, 35 hours, 40 hours, 45 hours, 48 hours, etc., for accelerated aging. And after the test is finished, adjusting the voltage to the rated current I again for testing, recording the obtained parameters of voltage, brightness and wavelength, and recording the parameters as the parameters after the aging test.
(4) After the parameter recording is finished after the aging test, the sealing cover 5 is directly taken down, then the sealing cover is baked at high temperature again, the N-surface electrode 6 of the GaAs-based light-emitting diode chip is stripped from the metal support 1 by using the blade, and the GaAs-based light-emitting diode chip can be recycled, so that the waste is avoided. The testing device can be repeatedly used until all the GaAs-based light-emitting diode chips in the test sample are tested according to the method.
(5) And comparing the initial parameters of each GaAs-based light-emitting diode chip in the test sample with the parameters after the aging test, and if the voltage change is less than +/-0.05 v, the wavelength change is less +/-0.3 nm and the brightness change is less +/-5%, determining that the quality of the tested GaAs-based light-emitting diode chip is qualified. And when the proportion of the qualified GaAs-based light-emitting diode chips in the test sample reaches a set value, judging that the whole quality of the batch of GaAs-based light-emitting diode chips is qualified, and delivering the batch of GaAs-based light-emitting diode chips to a downstream lamp bead packaging manufacturer.
It can be seen that the aging test method for the light emitting diode chip of the embodiment can perform simple and efficient aging test on the packaged light emitting diode chip in a chip factory, and can quickly restore the chip to a bare chip state after the test is finished, so that the complex packaging process of the chip factory for performing more real aging test is avoided under the condition of providing more reliable test data for a downstream packaging factory, the risk is moved forward, the use risk of the downstream lamp bead packaging factory is reduced, the customer complaint of the chip is reduced, and the divergence between the packaging factory and the chip factory is well overcome.
Finally, it should be understood that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive changes in the technical solutions of the present invention.
Claims (10)
1. A light emitting diode chip aging test method suitable for chip factories is characterized by comprising the following steps:
(1) Providing a test device comprising: the device comprises a metal support, a support cathode, a support anode, a connecting lead and an enclosure; wherein: the cathode of the support is fixed on the outer wall of the metal support; the positive pole of the support is positioned outside the metal support, the first end of the connecting lead is connected with the positive pole of the support, and the second end of the connecting lead passes through the sealing cover and then extends into the inner cavity of the sealing cover;
(2) Fixing an N-side electrode of a light-emitting diode chip to be tested on the upper surface of the metal support; connecting the P-surface electrode of the light-emitting diode chip with the second end of the connecting lead, covering the sealing cover on the upper surface of the metal support, and sealing the light-emitting diode chip in the inner cavity of the sealing cover;
(3) Connecting the cathode of the support and the anode of the support with a power supply, recording the obtained voltage, brightness and wavelength parameters as initial parameters, wherein the test current is the rated current of the light-emitting diode chip; then increasing the current to a test current, and continuously lighting the light-emitting diode chip for a period of time for accelerated aging; adjusting the voltage to the rated current again for testing after the aging test is finished, recording the obtained voltage, brightness and wavelength parameters, and recording as parameters after the aging test;
(4) And comparing the initial parameters with the changes of the parameters after the aging test, and judging whether the light-emitting diode chip meets the requirements.
2. The method for testing the aging of the light emitting diode chip suitable for being carried out by a chip factory as claimed in claim 1, wherein in the step (1), the metal support is fixed on a bracket; optionally, the metal support has a thickness of between 500 and 700 μm.
3. The method for testing the aging of the light emitting diode chip suitable for being performed by a chip factory as claimed in claim 1, wherein in the step (1), the material of the enclosure is epoxy resin.
4. The method of claim 1, wherein the enclosure has a thickness of between 100 and 200 um.
5. The method as claimed in claim 1, wherein in the step (2), the LED chip is placed on the upper surface of the metal support, and then baked to adhere the N-side electrode of the LED chip to the metal support.
6. The method for testing the aging of the light emitting diode chip suitable for being carried out by a chip factory as claimed in claim 5, wherein the baking temperature is between 250 and 270 ℃, and the baking time is between 60 and 90 min.
7. The LED chip burn-in test method suitable for being performed by a chip factory as claimed in claim 1, wherein in the step (3), the test current is 1.2-1.5 times of the rated current.
8. The method for testing the aging of the light emitting diode chip suitable for the chip factory as claimed in claim 1, wherein in the step (3), the continuous lighting time is 17-48 hours.
9. The method as claimed in claim 1, wherein in the step (4), the quality of the LED chip to be tested is acceptable if the voltage variation is less than ± 0.05v, the wavelength variation is less than ± 0.3nm, and the brightness variation is less than ± 5%.
10. The method for testing the aging of the light-emitting diode chip suitable for chip factories according to any one of claims 1 to 9, wherein in the step (4), after the parameter recording after the aging test is completed, the enclosure is directly removed, and the N-side electrode of the light-emitting diode chip is separated from the metal support, so that the light-emitting diode chip can be recycled and the testing device can be reused.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117148092A (en) * | 2023-11-01 | 2023-12-01 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117148092A (en) * | 2023-11-01 | 2023-12-01 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
| CN117148092B (en) * | 2023-11-01 | 2024-03-12 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
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