CN111987205B - GaAs-based LED lamp bead packaging method - Google Patents
GaAs-based LED lamp bead packaging method Download PDFInfo
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- CN111987205B CN111987205B CN201910427152.2A CN201910427152A CN111987205B CN 111987205 B CN111987205 B CN 111987205B CN 201910427152 A CN201910427152 A CN 201910427152A CN 111987205 B CN111987205 B CN 111987205B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 79
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 66
- 239000011324 bead Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 27
- 230000001070 adhesive effect Effects 0.000 claims abstract description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 24
- 239000004332 silver Substances 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 9
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 6
- 238000011049 filling Methods 0.000 claims abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007796 conventional method Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a method for packaging a GaAs-based LED lamp bead, which belongs to the field of photoelectrons and comprises the following steps: growing a GaAs-based light-emitting diode chip epitaxial layer on a GaAs substrate, and preparing a P electrode and an N electrode by a conventional method; cutting the chip on the P surface, forming strip-shaped cutting channels around the P electrode, wherein the chips are not completely cut by the cutting channels; bonding the N surface and the magnetic packaging metal substrate together through conductive silver glue; completely cutting the chip along the cutting path, and magnetically connecting the packaging metal substrate with the packaging support; connecting the P electrode with the anode of the packaging support by using a metal wire, and coating, filling and packaging epoxy resin glue around the packaging metal substrate; and placing the packaging support into an oven to heat and cure the glue to obtain the packaged GaAs-based light-emitting diode chip lamp bead. The method is simple to operate, and the condition that the electric leakage of the lamp beads is generated when the conductive silver adhesive covers the epitaxial layer on the side surface of the GaAs-based light-emitting diode chip is avoided.
Description
Technical Field
The invention relates to a packaging method of a GaAs-based LED lamp bead, and belongs to the technical field of photoelectrons.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
In the last 50 s of the century, group III-V semiconductors, typified by GaAs, have rapidly risen in the field of semiconductor light emission under the efforts of a number of well-known Research institutes, typified by IBM Thomas j. With the advent of Metal Organic Chemical Vapor Deposition (MOCVD) technology, high quality III-V semiconductor growth has broken through the technological barrier, and semiconductor light emitting diode devices of various wavelengths have been in the market in succession. Compared with the existing light-emitting devices, the semiconductor light-emitting diode has the characteristics of high efficiency, long service life, strong mechanical impact resistance and the like, and is considered as a new generation of lighting device worldwide.
When the GaAs-based light-emitting diode chip is packaged into the LED lamp bead, the N surface of the chip is stuck on a packaging support by conductive silver adhesive, and the P surface is connected and conducted by welding wires according to the characteristics of the GaAs-based light-emitting diode chip. At the present stage, the requirements on parameters of the GaAs-based light-emitting diode chip are higher and higher, the brightness of the GaAs-based light-emitting diode chip is higher and higher, the thickness of the GaAs-based light-emitting diode chip for better heat dissipation by a chip manufacturer is thinner and thinner, the requirement on coating of conductive silver adhesive is higher and higher, and if the silver adhesive is too much in the dispensing process, the silver adhesive covers the epitaxial layer on the side surface of the GaAs-based light-emitting diode chip, and finally, the electric leakage phenomenon of a packaged finished product is caused.
At the present stage, in order to avoid the phenomenon of electric leakage caused by silver paste, packaging manufacturers do not wish to use a chip with an excessively thin thickness, the requirement for heat dissipation of the chip is higher and higher due to higher and higher brightness of the chip, the thinning of the chip is inevitably required, and how to avoid the phenomenon that conductive silver paste covers the epitaxial layer on the side face of the GaAs-based light-emitting diode chip under the condition of thinning of the chip is a main reason for restricting the current chip lifting parameters.
Disclosure of Invention
Aiming at the defect of electric leakage caused by conductive silver adhesive in the existing GaAs-based LED lamp bead packaging method, the invention provides the GaAs-based LED lamp bead packaging method which is simple to operate and avoids lamp bead electric leakage caused by the fact that the conductive silver adhesive covers the epitaxial layer on the side surface of the GaAs-based light-emitting diode chip.
The invention adopts the following technical scheme:
a packaging method of a GaAs-based LED lamp bead comprises the following steps:
(1) growing a GaAs-based light-emitting diode chip epitaxial layer on a GaAs substrate, and preparing a P electrode and an N electrode of the light-emitting diode chip by conventional P-surface metal deposition, P electrode photoetching, thinning and N-surface metal deposition methods;
(2) performing P-surface cutting on the GaAs-based light-emitting diode chip prepared in the step (1), forming a strip-shaped cutting channel around the P electrode by using a diamond cutter, wherein the period of the cutting channel is consistent with that of the P electrode, the GaAs-based light-emitting diode chip is not completely cut by the cutting channel (the epitaxial layer is cut through and cut to the substrate), performing conventional testing on the cut chip to obtain the photoelectric parameters of the chip, and performing testing by adopting a conventional method, such as placing the chip on a photoelectric parameter testing platform for testing, and the like, which is not described herein again;
(3) and (3) bonding the N surface (namely the N electrode) of the GaAs-based light-emitting diode chip which is not divided in the step (2) with the magnetic packaging metal substrate, wherein the bonding method comprises the following steps: coating conductive silver adhesive on a packaging metal substrate, directly placing the N surface of the LED chip which is not divided on the conductive silver adhesive, and baking the conductive silver adhesive by using an oven to solidify the conductive silver adhesive so as to realize the connection of the N surface of the LED chip and the packaging metal substrate, wherein the conductive silver adhesive can not cover the epitaxial layer on the side surface of the GaAs-based LED chip because the GaAs-based LED chip is not completely divided;
(4) cutting the GaAs-based light-emitting diode chip prepared in the step (3) completely along a cutting path by using a diamond cutter, cutting a packaging metal substrate completely, preferably, the shape of the completely cut magnetic packaging substrate is consistent with that of the N surface of the chip, placing the GaAs-based light-emitting diode chip on a packaging support, connecting the packaging metal substrate with the packaging support, wherein the packaging support is made of a metal material, and is connected by magnetic adsorption, so that the connection between an N electrode (cathode) of the chip and the cathode of the packaging support is ensured, and the firmness of the chip can be ensured because the packaging in the step (5) is coated by epoxy resin adhesive;
(5) connecting the P electrode of the LED chip with the anode of the packaging support by using a metal wire, coating epoxy resin glue for packaging at the contact periphery of the packaging metal substrate and the packaging support, and coating the contact part of the packaging metal substrate and the packaging support to prevent electric leakage; and (4) putting the packaging support into an oven for heating, and curing the epoxy resin adhesive to obtain the packaged GaAs-based light-emitting diode chip lamp bead.
Preferably, the cutting depth in step (2) is preferably 1/4 die thickness-1/3 die thickness, where the die thickness includes the thickness of the GaAs substrate and epitaxial layers.
Preferably, the width of the cutting path in the step (2) is preferably 20-30 μm.
Preferably, the thickness of the magnetic packaging metal substrate in the step (3) is 20-40 μm.
Preferably, the temperature of the oven baking in the step (3) is 180-.
Further preferably, the oven temperature in the step (5) is 150-.
Further preferably, the metal wire in the step (5) is a gold wire or an aluminum wire.
The present invention is not described in detail, and the prior art can be adopted.
The invention has the beneficial effects that:
the invention relates to a GaAs-based LED lamp bead, which is characterized in that chips packaged by the existing GaAs-based LED lamp bead are completely cut and then fixed on a packaging support by conductive silver adhesive, and the operation mode can cause the problem of electric leakage because the conductive silver adhesive covers the side surfaces of the chips.
Drawings
Fig. 1 is a cross-sectional view of a GaAs-based light-emitting diode chip fabricated in step (2) in an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a GaAs-based light emitting diode chip fabricated in step (4) in an embodiment of the present invention;
in the figure, 1-GaAs substrate, 2-epitaxial layer, 3-P electrode, 4-scribe line, 5-N electrode.
The specific implementation mode is as follows:
in order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific examples, but not limited thereto, and the present invention is not described in detail and is in accordance with the conventional techniques in the art.
Example 1:
a packaging method of a GaAs-based LED lamp bead comprises the following steps:
(1) growing a GaAs-based light-emitting diode chip epitaxial layer on a GaAs substrate 1, and preparing a P electrode 3 and an N electrode 5 of the light-emitting diode chip by conventional P-surface metal deposition, P electrode photoetching, thinning and N-surface metal deposition methods;
(2) performing P-surface cutting on the GaAs-based light-emitting diode chip prepared in the step (1), as shown in fig. 1, forming a strip-shaped cutting channel 4 around a P electrode 3 by using a diamond cutter, wherein the period of the cutting channel 4 is consistent with that of the P electrode 3, and the cutting channel 4 does not completely divide the GaAs-based light-emitting diode chip (an epitaxial layer is cut through and cut to a substrate), performing conventional testing on the cut chip to obtain a chip photoelectric parameter, and performing testing by using a conventional method, for example, placing the chip on a photoelectric parameter testing table for testing, and the like, which is not described herein again;
(3) bonding the N surface (namely the N electrode 5) of the GaAs-based light emitting diode chip which is not divided in the step (2) with the magnetic packaging metal substrate, wherein the bonding method comprises the following steps: coating conductive silver adhesive on a packaging metal substrate, directly placing the N surface of the LED chip which is not divided on the conductive silver adhesive, and baking the conductive silver adhesive by using an oven to solidify the conductive silver adhesive so as to realize the connection of the N surface of the LED chip and the packaging metal substrate, wherein the conductive silver adhesive can not cover the epitaxial layer on the side surface of the GaAs-based LED chip because the GaAs-based LED chip is not completely divided;
(4) cutting the GaAs-based light-emitting diode chip prepared in the step (3) completely along a cutting path 4 by using a diamond cutter and cutting a packaging metal substrate completely, as shown in fig. 2, wherein the shape of the completely cut and magnetic packaging substrate is consistent with the shape of the N surface of the chip, placing the GaAs-based light-emitting diode chip on a packaging support, connecting the packaging metal substrate with the packaging support, connecting the packaging support by using a metal material through magnetic adsorption, and ensuring that the N electrode (cathode) of the chip is connected with the cathode of the packaging support, wherein the packaging in the step (5) is coated by using epoxy resin adhesive, so that the firmness of the chip can be ensured;
(5) connecting a P electrode 3 of the light-emitting diode chip with the anode of a packaging support by using a metal wire, and coating and filling epoxy resin glue for packaging around the contact part of a packaging metal substrate and the packaging support; and (4) putting the packaging support into an oven for heating, and curing the epoxy resin adhesive to obtain the packaged GaAs-based light-emitting diode chip lamp bead.
Example 2:
a method for packaging a GaAs-based LED lamp bead, as shown in embodiment 1, except that in step (2), the cutting depth is 1/4 chip thickness, where the chip thickness includes the thickness of the GaAs substrate and the epitaxial layer;
the width of the scribe line 4 is 25 μm.
Example 3:
a method for packaging a GaAs-based LED lamp bead, as shown in embodiment 1, except that the thickness of the magnetic packaging metal substrate is 30 μm.
Example 4:
a GaAs-based LED lamp bead packaging method is disclosed as embodiment 1, except that in the step (3), the baking temperature of an oven is 180-220 ℃, and the baking time is 40-60 minutes.
Example 5:
a GaAs-based LED lamp bead packaging method is disclosed as an embodiment 1, except that in the step (5), the temperature of an oven is 150-;
in the step (5), the metal wire is a gold wire.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A packaging method of a GaAs-based LED lamp bead is characterized by comprising the following steps:
(1) growing a GaAs-based light-emitting diode chip epitaxial layer on a GaAs substrate, and preparing a P electrode and an N electrode of the light-emitting diode chip;
(2) p-surface cutting is carried out on the GaAs-based light-emitting diode chip manufactured in the step (1), strip-shaped cutting channels are formed around the P electrode, the period of each cutting channel is consistent with that of the P electrode, the GaAs-based light-emitting diode chip is not completely cut off by the cutting channels, and the cut chip is tested to obtain the photoelectric parameters of the chip;
(3) bonding the N surface of the GaAs-based light-emitting diode chip which is not divided in the step (2) with a magnetic packaging metal substrate, wherein the bonding method comprises the following steps: coating conductive silver adhesive on the packaging metal substrate, directly placing the N surface of the LED chip which is not divided on the conductive silver adhesive, and baking by using an oven to solidify the conductive silver adhesive so as to realize the connection of the N surface of the LED and the packaging metal substrate;
(4) completely cutting the GaAs-based light-emitting diode chip prepared in the step (3) along a cutting path and completely cutting a packaging metal substrate, placing the GaAs-based light-emitting diode chip on a packaging support to connect the packaging metal substrate with the packaging support, wherein the packaging support is made of a metal material and is connected through magnetic adsorption;
(5) connecting a P electrode of the light-emitting diode chip with the anode of a packaging support by using a metal wire, and coating and filling epoxy resin glue for packaging around the contact part of a packaging metal substrate and the packaging support; placing the packaging support into an oven to be heated, and curing the epoxy resin adhesive to obtain a GaAs-based light-emitting diode chip lamp bead after packaging;
the cutting depth in the step (2) is 1/4 chip thickness-1/3 chip thickness.
2. The GaAs-based LED lamp bead packaging method of claim 1, wherein the width of the scribe line in step (2) is 20-30 μm.
3. The GaAs-based LED lamp bead packaging method as claimed in claim 1, wherein the thickness of the magnetic packaging metal substrate in the step (3) is 20-40 μm.
4. The GaAs-based LED lamp bead packaging method as claimed in claim 1, wherein the baking temperature of the baking oven in the step (3) is 180-220 ℃, and the baking time is 40-60 minutes.
5. The GaAs-based LED lamp bead packaging method as claimed in claim 1, wherein the baking oven temperature in the step (5) is 150- > 180 ℃, and the baking time is 90-120 minutes.
6. The GaAs-based LED lamp bead packaging method of claim 1, wherein the metal wire in the step (5) is a gold wire or an aluminum wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910427152.2A CN111987205B (en) | 2019-05-22 | 2019-05-22 | GaAs-based LED lamp bead packaging method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910427152.2A CN111987205B (en) | 2019-05-22 | 2019-05-22 | GaAs-based LED lamp bead packaging method |
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| CN111987205A CN111987205A (en) | 2020-11-24 |
| CN111987205B true CN111987205B (en) | 2021-12-07 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106467A (en) * | 1993-10-05 | 1995-04-21 | Nec Corp | Optical semiconductor device and its manufacture |
| JP2000261042A (en) * | 1999-03-05 | 2000-09-22 | Toshiba Corp | Semiconductor light emitting element and manufacture of the same |
| CN101859852A (en) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes |
| CN102683541A (en) * | 2011-03-11 | 2012-09-19 | 新世纪光电股份有限公司 | Light emitting diode packaging subassembly with die bonded through magnetic forces |
| CN103339749A (en) * | 2011-01-28 | 2013-10-02 | 首尔Opto仪器股份有限公司 | Wafer-level light emitting diode package and method for manufacturing thereof |
-
2019
- 2019-05-22 CN CN201910427152.2A patent/CN111987205B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106467A (en) * | 1993-10-05 | 1995-04-21 | Nec Corp | Optical semiconductor device and its manufacture |
| JP2000261042A (en) * | 1999-03-05 | 2000-09-22 | Toshiba Corp | Semiconductor light emitting element and manufacture of the same |
| CN101859852A (en) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes |
| CN103339749A (en) * | 2011-01-28 | 2013-10-02 | 首尔Opto仪器股份有限公司 | Wafer-level light emitting diode package and method for manufacturing thereof |
| CN102683541A (en) * | 2011-03-11 | 2012-09-19 | 新世纪光电股份有限公司 | Light emitting diode packaging subassembly with die bonded through magnetic forces |
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| CN111987205A (en) | 2020-11-24 |
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