CN109994575B - A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip - Google Patents
A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip Download PDFInfo
- Publication number
- CN109994575B CN109994575B CN201711487966.2A CN201711487966A CN109994575B CN 109994575 B CN109994575 B CN 109994575B CN 201711487966 A CN201711487966 A CN 201711487966A CN 109994575 B CN109994575 B CN 109994575B
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- ohmic contact
- contact pattern
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000002441 reversible effect Effects 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000002390 adhesive tape Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910001258 titanium gold Inorganic materials 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to an electrode alignment method of a reverse polarity AlGaInP quaternary LED chip, which comprises the following steps: the method comprises the steps of firstly growing a layer of Au or AuBe film on the P surface of a reversed polarity AlGaInP quaternary LED epitaxial wafer, obtaining a P surface ohmic contact pattern by a conventional photoetching method, leaving two symmetrical marks at the upper edge, the lower edge, the left edge and the right edge of the epitaxial wafer, removing the N surface corresponding to the mark of the reversed polarity AlGaInP quaternary LED chip which is bonded and corroded by a substrate to be transparent and visible (namely exposing the N type AlGaInP layer) in a mode of taking a photoresist or a metal film as a mask according to the mark left by the P surface, and aligning the N surface ohmic contact pattern with the P surface ohmic contact pattern according to the mark.
Description
Technical Field
The invention relates to an electrode alignment method of a reverse polarity AlGaInP quaternary LED chip, belonging to the technical field of photoelectrons.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
AlGaInP material systems were originally used to produce visible light laser diodes, and AlGaInP materials were proposed by japanese researchers in the mid-eighties of the twentieth century, and LED and LD devices in that time typically used ga0.5in0.5p matched to a GaAs substrate as an active light emitting region, having an emission wavelength of 650nm, and have found wide application in quaternary laser pens and DVD and players. Later, researchers found that introducing an Al component into GaInP could shorten the emission wavelength further, but if the Al content is too high, the emission efficiency of the device would be decreased sharply, because AlGaInP becomes an indirect bandgap semiconductor when the Al content in GaInP exceeds 0.53, and therefore AlGaInP materials are generally used only to prepare LED devices with emission wavelengths above 570 nm. In 1997, AlGaInP-based LEDs of the first Multiple Quantum Well (MQW) composite bragg reflector (DBR) structure were produced in the world, and LED devices designed based on this structure still occupied a large share of the low-end market of LEDs to date.
The reversed polarity AlGaInP quaternary LED chip is widely applied to the field of high-power red LED display screens, the reversed polarity is to replace a substrate, a GaAs substrate with larger light absorption is replaced by a single crystal conductive Si substrate or a sapphire substrate, the GaAs substrate is corroded and removed after replacement, a corrosion barrier layer is corroded to expose a heavily doped layer, Au is evaporated on the heavily doped layer to form ohmic contact, N-face ohmic contact layer patterns are prepared by subsequent photoetching, in order to ensure that reversed polarity AlGaInP obtains better current expansion and higher brightness, the N-face ohmic contact patterns are generally aligned with the P-face ohmic contact patterns, the middle part of an epitaxial layer of the reversed polarity AlGaInP quaternary LED chip is opaque, partial area of the epitaxial layer is selectively corroded when the electrode is aligned to the N-face ohmic contact patterns, and the method has the defects that, the loss of the chip is large, so how to effectively align and reduce the loss of the chip becomes a major problem at present.
Chinese patent document CN104518056A discloses a method for manufacturing an AlGaInP red LED chip with reversed polarity, which mainly inserts a step of removing a residual metal film layer at the edge of a wafer between two steps of stripping a GaAs substrate and etching a barrier layer, thereby preventing the wafer from being contaminated before evaporation of an N-type electrode, ensuring the surface of the chip to be clean, and avoiding the problems of downshifting and yield reduction caused by electrode loss in the subsequent process.
Chinese patent document CN205723599U discloses a reversed-polarity AlGaInP-based LED with ITO covered on the surface, which is mainly formed by sequentially disposing a metal bonding layer, an ODR mirror, an epitaxial layer, an ITO extended current extended layer and a main electrode on a permanent substrate with a back electrode; the ODR reflector is composed of a metal reflecting layer and a dielectric film layer which are connected with each other, and the dielectric film layer is connected with the epitaxial layer; the metal reflecting layer is connected with the metal bonding layer; an ohmic contact point is arranged between the ITO current expansion layer and the epitaxial layer; the surface of the ITO current spreading layer is coarsened. The invention is suitable for the current expansion of the N-type layer of the reversed polarity AlGaInP-based LED, and does not relate to the alignment of the N-type layer and the P-surface electrode.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the electrode alignment method of the reversed polarity AlGaInP quaternary LED chip, which has the advantages of simple process, higher alignment degree and less chip loss.
The technical scheme of the invention is as follows:
an electrode alignment method of a reversed polarity AlGaInP quaternary LED chip comprises the following steps:
(1) a layer of Au film or AuBe film is evaporated on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer, a P surface ohmic contact pattern is prepared on the Au film or AuBe film, and two symmetrical marks containing the P surface ohmic contact layer are left at the center positions of the upper edge, the lower edge, the left edge and the right edge of the epitaxial wafer; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top;
compared with other metal films, the Au film or the AuBe film and the P surface of the reverse polarity AlGaInP quaternary LED epitaxial wafer can form good ohmic contact, and the P surface ohmic contact pattern prepared by the Au film or the AuBe film is clearer and is easier to align subsequently.
(2) Growing a layer of SiO on the epitaxial wafer generated in the step (1)2Removing the SiO on the P-surface ohmic contact pattern generated in the step (1)2Film to obtain SiO2A film pattern;
SiO2the film can effectively play a role in current blocking and current expansion; and, because of the SiO on the P-face ohmic contact pattern2The film is removed, and lines at the relevant marks are clearer and easier to align.
(3) Sequentially evaporating a metal reflector layer (Au or Ag) and a metal bonding layer (Au or TiAu) on the epitaxial wafer generated in the step (2); evaporating a metal bonding layer (Au or TiAu) on the surface of a single crystal conductive Si substrate or a sapphire substrate, evaporating a metal bonding layer (In or Sn) on the metal bonding layer, and then bonding the reversed polarity AlGaInP quaternary LED epitaxial wafer and the single crystal conductive Si substrate or the sapphire substrate together;
the metal reflector layer reflects light emitted from the inside of the reversed polarity AlGaInP quaternary LED chip to the bonded single crystal conductive Si substrate or sapphire substrate back and finally exits from the N-type AlGaInP layer, and the light emitting efficiency is improved. The metal bonding layer fuses with the metal adhesion layer and blocks diffusion of the metal adhesion layer (In or Sn). The metal bonding layer can be better fused with the metal bonding layer by utilizing the characteristics of In or Sn.
(4) Removing the GaAs substrate and the barrier layer, and removing the light-tight epitaxial layer at the position of the N surface corresponding to the mark made in the step (1) to expose the N-type AlGaInP layer at the position of the N surface corresponding to the mark made in the step (1) and make an N-surface ohmic contact pattern aligned with the P-surface ohmic contact pattern; and (4) because the light-tight epitaxial layer at the mark is removed, subsequently manufacturing an N-surface ohmic contact pattern, and aligning the N-surface ohmic contact pattern with the P-surface ohmic contact pattern by the mark.
The electrode alignment method adopts the method of manufacturing the mark on the P surface and aligning the mark on the P surface by the N surface, is simpler and more practical, adopts the method of leaving two marks at the upper position, the lower position or the left position and the right position, has higher alignment degree, occupies smaller area of the set mark, reduces the loss of a chip, improves the quality of the chip, has simple and convenient operation, can obtain more stable light emitting effect, and is suitable for large-scale production.
According to the present invention, preferably, the step (4) includes:
A. attaching a film at the position of the N surface corresponding to the mark made in the step (1); the N surface can be clearly displayed under strong light;
B. uniformly coating a positive photoresist with the thickness of 1.5-3 mu m on the film with the N surface;
C. removing the film, removing the positive photoresist on the film, and baking the whole epitaxial wafer in a baking oven at 90-105 ℃ for 5-15 minutes;
D. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the non-positive photoresist region to expose the N-type AlGaInP layer, seeing the mark of the P-surface ohmic contact pattern, and manufacturing the N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern. Because the N-type AlGaInP layer and the other AlGaInP quaternary epitaxial layers are transparent, the mark of the P-surface ohmic contact pattern is exposed at the mark, and the alignment of the N surface and the P surface can be carried out according to the pattern at the mark.
Preferably according to the invention, the film is a blue film. The blue film is not strong in viscosity, glue is not easy to fall off, and subsequent alignment is not influenced.
According to the present invention, preferably, the step (4) includes:
a. attaching a high-temperature-resistant adhesive tape to the position of the N surface corresponding to the mark made in the step (1); the N surface can be clearly displayed under strong light;
b. a GeAu film with the thickness of 0.3-0.6 mu m is vapor-plated on the N surface;
c. removing the high-temperature resistant adhesive tape, and removing the GeAu film on the high-temperature resistant adhesive tape;
d. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the GeAu film-free region to expose the N-type AlGaInP layer, seeing the mark of the P-surface ohmic contact pattern, and manufacturing the N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern. Because the N-type AlGaInP layer and the other AlGaInP quaternary epitaxial layers are transparent, the mark of the P-surface ohmic contact pattern is exposed at the mark, and the alignment of the N surface and the P surface can be carried out according to the pattern at the mark.
Preferably, in the step (1), the thickness of the Au film or AuBe film is 0.3 to 0.4 μm.
The thickness of the Au film or the AuBe film is selected to better complete the preparation of P-surface ohmic contact (pattern distortion during preparation when the thickness is too thin) and better complete alignment and reduce the use of metal (excessive use of metal with too thick thickness and cost increase).
Preferably, in step (1), the mark is rectangular.
Preferably, in step (1), the mark is square and has an area of 0.25-1mm2. The area occupied by the arranged marks is smaller, and the loss of chips is reduced.
According to the present invention, in the step (2), SiO is preferable2The thickness of the film is 0.35-0.5 μm. Matched with Au film or AuBe film thickness.
According to a preferable embodiment of the present invention, In the step (3), the metal mirror layer is made of Au or Ag, the metal bonding layer is made of Au or TiAu, and the metal bonding layer is made of In or Sn.
The invention has the beneficial effects that:
1. the electrode alignment method adopts a method of manufacturing a mark on the P surface and aligning the N surface with the mark on the P surface, so that the method is simpler and more practical;
2. the invention adopts a method of leaving two marks at the upper and lower positions or the left and right positions, so that the alignment degree is higher;
3. the mark provided by the invention occupies a small area, reduces the loss of the chip, improves the quality of the chip, is simple and convenient to operate, can obtain a more stable light emitting effect, and is suitable for large-scale production.
Drawings
Fig. 1 is a cross-sectional view of a reverse polarity quaternary LED chip made in accordance with the present invention.
Fig. 2 is a cross-sectional view of the reverse polarity quaternary LED chip manufactured in step (1) of the present invention.
Fig. 3 is a cross-sectional view of the reverse polarity quaternary LED chip manufactured in step (2) of the present invention.
FIG. 4 is a schematic representation of two symmetrical labels of step (1) of the present invention;
fig. 5 is a comparison graph of the effects of electrode alignment using the conventional electrode alignment method and the electrode alignment method of the present invention.
1. GaAs substrate, 2 blocking layer GaInP, 3 opaque epitaxial layer heavily doped with GaAs, 4, N type AlGaInP layer, 5, reverse polarity quaternary LED epitaxial layer, 6, Au film, 7, SiO2Film, 8, metal reflector layer, 9, metal bonding layer, 10, metal bonding layer, 11, Si substrate, 12 and N-side ohmic contact pattern.
Detailed Description
The invention is described in detail below with reference to the following examples and the accompanying drawings of the specification, but is not limited thereto.
Example 1
An electrode alignment method of a reversed polarity AlGaInP quaternary LED chip comprises the following steps:
(1) an Au film 6 with the thickness of 0.3-0.4 mu m is vapor-plated on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer, a P surface ohmic contact pattern is prepared on the Au film 6 by a conventional photoetching method, two symmetrical square marks containing the P surface ohmic contact layer are left at the center positions of the upper edge, the lower edge, the left edge and the right edge of the epitaxial wafer, and the area of the square marks is 0.25-1mm2As shown in fig. 4, the cross and X are used for subsequent alignment, and the black area is a square mark; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate 1, a blocking layer GaInP 2, a light-tight epitaxial layer heavily-doped GaAs 3, an N-type AlGaInP layer 4 and a reverse polarity quaternary LED epitaxial layer 5 from bottom to top; as shown in fig. 2.
Compared with other metal films, the Au film 6 and the P surface of the reverse polarity AlGaInP quaternary LED epitaxial wafer can form good ohmic contact, and the P surface ohmic contact pattern prepared by the Au film 6 is clearer and is easier to align subsequently. The thickness of the Au film 6 is selected, so that the preparation of P-surface ohmic contact (pattern distortion in preparation of too thin thickness) can be better completed, alignment can be better completed, and the use of metal is reduced (excessive use of metal with too thick thickness and cost increase). The area occupied by the arranged marks is smaller, and the loss of chips is reduced.
(2) Growing a layer of SiO with the thickness of 0.35-0.5 mu m on the epitaxial wafer generated in the step (1)2 Film 7, removing SiO on the P-side ohmic contact pattern generated in step (1) by conventional photolithography method2Film 7 to obtain SiO2A film pattern; as shown in fig. 3.
SiO2The film 7 can effectively play a role in current blocking and current expansion; and, because of the SiO on the P-face ohmic contact pattern2The film 7 is removed, and lines at relevant marks are clearer and easier to align.
(3) Sequentially evaporating a metal reflector layer 8(Au or Ag) and a metal bonding layer 9(Au or TiAu) on the epitaxial wafer generated in the step (2) in an electron beam evaporation way; evaporating a metal bonding layer 9(Au or TiAu) on the surface of a single-crystal conductive Si substrate 11 In an electron beam evaporation mode, evaporating a metal bonding layer 10(In or Sn) on the metal bonding layer 9 In an electron beam evaporation mode, and then bonding a reverse polarity AlGaInP quaternary LED epitaxial wafer and the single-crystal conductive Si substrate 11 together;
the metal reflector layer 8 emits light emitted from the inside of the reversed polarity AlGaInP quaternary LED chip to the single crystal conductive Si substrate 11 after bonding back, and finally exits from the N-type AlGaInP layer 4, so that the light emitting efficiency is improved. The metal bonding layer 9 fuses with the metal adhesion layer 10 and blocks diffusion of the metal adhesion layer 10(In or Sn). The metal bonding layer 10 can be better fused with the metal bonding layer 9 by utilizing the characteristics of In or Sn.
(4) Removing the GaAs substrate 1 and the blocking layer GaInP 2 by a conventional chemical etching method, removing the light-tight epitaxial layer 3 at the position of the N surface corresponding to the mark made in the step (1) in a mode of taking a photoresist or a metal film as a mask, exposing the N-type AlGaInP layer 4 at the position of the N surface corresponding to the mark made in the step (1), and making an N-surface ohmic contact pattern 12 to be aligned with the P-surface ohmic contact pattern; and (4) because the light-tight epitaxial layer at the mark is removed, subsequently manufacturing an N-surface ohmic contact pattern, and aligning the N-surface ohmic contact pattern with the P-surface ohmic contact pattern by the mark. The electrode alignment method adopts the method of manufacturing the mark on the P surface and aligning the mark on the P surface by the N surface, is simpler and more practical, adopts the method of leaving two marks at the upper position, the lower position or the left position and the right position, has higher alignment degree, occupies smaller area of the set mark, reduces the loss of a chip, improves the quality of the chip, has simple and convenient operation, can obtain more stable light emitting effect, and is suitable for large-scale production. The method comprises the following steps:
A. attaching a blue film with the same size to the position of the N surface corresponding to the mark made in the step (1); the N surface can be clearly displayed under strong light; the blue film is not strong in viscosity, glue is not easy to fall off, and subsequent alignment is not influenced.
B. Uniformly coating a positive photoresist with the thickness of 1.5-3 mu m on the blue film of the N surface;
C. removing the blue film, removing the positive photoresist on the blue film, and baking the whole epitaxial wafer in a baking oven at 90-105 ℃ for 5-15 minutes;
D. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the region without the positive photoresist to expose the N-type AlGaInP layer 4, seeing the mark of the P-surface ohmic contact pattern, and manufacturing an N-surface ohmic contact pattern 12 to be aligned with the P-surface ohmic contact pattern. Because the N-type AlGaInP layer 4 and the other AlGaInP quaternary epitaxial layers are transparent, the mark of the P-surface ohmic contact pattern is exposed at the mark, and the alignment of the N surface and the P surface can be carried out according to the pattern at the mark. The cross-sectional view of the reverse polarity quaternary LED chip manufactured in this embodiment is shown in fig. 1.
A comparison graph of the effect of the electrode alignment by the conventional electrode alignment method and the electrode alignment method of the embodiment is shown in fig. 5, (a) is a chip schematic diagram obtained by the conventional electrode alignment method; (b) is a schematic diagram of a chip obtained by adopting the electrode alignment method of the embodiment; the black area is a chip loss area, and the comparison shows that the chip loss area in the prior art is a random area and has a larger area, and after the electrode alignment method of the embodiment is adopted, the loss of the chip is greatly reduced, and the quality of the chip is improved.
Example 2
The method for aligning the electrodes of the reversed-polarity AlGaInP quaternary LED chip in the embodiment 1 is characterized in that the step (4) comprises the following steps:
a. sticking a high-temperature-resistant adhesive tape with the same size at the position of the N surface corresponding to the mark made in the step (1); the N surface can be clearly displayed under strong light;
b. evaporating a GeAu film with the thickness of 0.3-0.6 mu m on the N surface in an electron beam evaporation mode;
c. removing the high-temperature resistant adhesive tape, and removing the GeAu film on the high-temperature resistant adhesive tape;
d. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the GeAu film-free region to expose the N-type AlGaInP layer 4, seeing the mark of the P-surface ohmic contact pattern, and manufacturing the N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern. Because the N-type AlGaInP layer 4 and the other AlGaInP quaternary epitaxial layers are transparent, the mark of the P-surface ohmic contact pattern is exposed at the mark, and the alignment of the N surface and the P surface can be carried out according to the pattern at the mark.
Example 3
The method for aligning the electrodes of the AlGaInP quaternary LED chip with reversed polarity described in embodiment 1 or 2 is different from that,
in the step (1), a layer of AuBe film with the thickness of 0.3-0.4 mu m is evaporated on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer.
Example 4
The method for aligning the electrodes of the AlGaInP quaternary LED chips with reversed polarity described in examples 1-3 is different from the method,
in the step (3), a metal bonding layer 9(Au or TiAu) is evaporated on the surface of the sapphire substrate, a metal bonding layer 10(In or Sn) is evaporated on the metal bonding layer 9, and then the AlGaInP quaternary LED epitaxial wafer with reversed polarity is bonded with the sapphire substrate.
Claims (9)
1. An electrode alignment method of a reversed polarity AlGaInP quaternary LED chip is characterized by comprising the following steps:
(1) a layer of Au film or AuBe film is evaporated on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer, a P surface ohmic contact pattern is prepared on the Au film or AuBe film, and two symmetrical marks are left at the center positions of the upper edge, the lower edge, the left edge and the right edge of the epitaxial wafer; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top; the area of the mark is 0.25-1mm2；
(2) In thatGrowing a layer of SiO on the epitaxial wafer generated in the step (1)2Removing the SiO on the P-surface ohmic contact pattern generated in the step (1)2Film to obtain SiO2A film pattern;
(3) evaporating a metal reflector layer and a metal bonding layer on the epitaxial wafer generated in the step (2) in sequence; evaporating a metal bonding layer on the surface of a single crystal conductive Si substrate or a sapphire substrate, evaporating a metal bonding layer on the metal bonding layer, and then bonding a reverse polarity AlGaInP quaternary LED epitaxial wafer and the single crystal conductive Si substrate or the sapphire substrate together;
(4) and (3) removing the GaAs substrate and the barrier layer, and removing the light-tight epitaxial layer at the position of the N surface corresponding to the mark made in the step (1), so that the N-type AlGaInP layer is exposed at the position of the N surface corresponding to the mark made in the step (1), and manufacturing an N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern.
2. The method as claimed in claim 1, wherein the step (4) comprises:
A. attaching a film at the position of the N surface corresponding to the mark made in the step (1);
B. uniformly coating a positive photoresist with the thickness of 1.5-3 mu m on the film with the N surface;
C. removing the film, removing the positive photoresist on the film, and baking the whole epitaxial wafer at 90-105 ℃ for 5-15 minutes;
D. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the non-positive photoresist region to expose the N-type AlGaInP layer, seeing the mark of the P-surface ohmic contact pattern, and manufacturing the N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern.
3. The method as claimed in claim 2, wherein the film is a blue film.
4. The method as claimed in claim 1, wherein the step (4) comprises:
a. attaching a high-temperature-resistant adhesive tape to the position of the N surface corresponding to the mark made in the step (1);
b. a GeAu film with the thickness of 0.3-0.6 mu m is vapor-plated on the N surface;
c. removing the high-temperature resistant adhesive tape, and removing the GeAu film on the high-temperature resistant adhesive tape;
d. and putting the whole epitaxial wafer into the etching solution, etching the epitaxial layer exposed from the GeAu film-free region to expose the N-type AlGaInP layer, seeing the mark of the P-surface ohmic contact pattern, and manufacturing the N-surface ohmic contact pattern to be aligned with the P-surface ohmic contact pattern.
5. The method as claimed in claim 1, wherein the thickness of the Au film or AuBe film in step (1) is 0.3-0.4 μm.
6. The method as claimed in claim 1, wherein in step (1), the mark is rectangular.
7. The method as claimed in claim 1, wherein the marks in step (1) are square.
8. The method as claimed in claim 1, wherein in step (2), SiO is added to the substrate2The thickness of the film is 0.35-0.5 μm.
9. The method as claimed In any one of claims 1 to 8, wherein In step (3), the metal mirror layer is made of Au or Ag, the metal bonding layer is made of Au or TiAu, and the metal bonding layer is made of In or Sn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711487966.2A CN109994575B (en) | 2017-12-29 | 2017-12-29 | A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711487966.2A CN109994575B (en) | 2017-12-29 | 2017-12-29 | A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109994575A CN109994575A (en) | 2019-07-09 |
| CN109994575B true CN109994575B (en) | 2020-03-27 |
Family
ID=67110457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711487966.2A Expired - Fee Related CN109994575B (en) | 2017-12-29 | 2017-12-29 | A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109994575B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203760507U (en) * | 2014-02-21 | 2014-08-06 | 程君 | LED eutectic wafer with alignment mark |
| CN104518056A (en) * | 2014-12-31 | 2015-04-15 | 山东浪潮华光光电子股份有限公司 | Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip |
-
2017
- 2017-12-29 CN CN201711487966.2A patent/CN109994575B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203760507U (en) * | 2014-02-21 | 2014-08-06 | 程君 | LED eutectic wafer with alignment mark |
| CN104518056A (en) * | 2014-12-31 | 2015-04-15 | 山东浪潮华光光电子股份有限公司 | Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109994575A (en) | 2019-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6811715B2 (en) | Light emitting element package and lighting equipment | |
| EP1551064A2 (en) | Light emitting device and manufacturing method thereof. | |
| US20120112218A1 (en) | Light Emitting Diode with Polarized Light Emission | |
| JP2016184724A (en) | Light emitting device and light emitting device package including the same | |
| JP2011249411A (en) | Semiconductor light-emitting element, light-emitting device, illumination device, display device, signal light unit and road information device | |
| CN111200042A (en) | A kind of preparation method of AlGaInP quaternary LED chip | |
| CN109994575B (en) | A kind of electrode alignment method of reverse polarity AlGaInP quaternary LED chip | |
| CN114342094B (en) | Light emitting diode, manufacturing method and display panel | |
| JP5781409B2 (en) | Semiconductor light emitting element array and vehicle lamp | |
| US20080121907A1 (en) | Light emitting diode and fabricating method thereof | |
| KR101457036B1 (en) | Light emitting diode and manufacturing method of the same | |
| CN114497300B (en) | Light emitting diode and light emitting device | |
| CN107611232B (en) | Light-emitting diode and method of making the same | |
| CN114156379A (en) | How to make a light-emitting chip | |
| KR102282383B1 (en) | LED electrode assembly and manufacturing method thereof | |
| CN109841713A (en) | The face the P ohmic contact layer of reversed polarity quaternary LED and the preparation method of current extending | |
| CN110120443B (en) | A kind of preparation method of reverse polarity AlGaInP quaternary LED chip | |
| TWI608633B (en) | Light emitting diode device and method for manufacturing the same | |
| CN109037406A (en) | A kind of red-light LED flip chip structure and preparation method | |
| CN111106209B (en) | A kind of preparation method of AlGaInP quaternary LED chip | |
| KR20190099620A (en) | High efficiency led using nano particle | |
| KR200370463Y1 (en) | High density-flat pannel lamp of white light emitting diodes | |
| KR101679756B1 (en) | Light emitting diode package and method for manufacturing the same | |
| TWI625869B (en) | Optoelectronic device and method for manufacturing the same | |
| CN116544329A (en) | LED chip with ITO film with microlens array structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200327 |