CN109994575A - A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip - Google Patents
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip Download PDFInfo
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Abstract
The present invention relates to a kind of electrode alignment methods of reversed polarity AlGaInP quaternary LED chip, it include: that layer of Au or AuBe film are first grown on the face reversed polarity AlGaInP quaternary LED epitaxial wafer P, the face P Ohmic contact pattern is obtained by the method for conventional lithographic, and under extension on piece or left and right edges position leaves two symmetrical labels, the corresponding face N of reversed polarity AlGaInP quaternary LED chip mark being bonded and corrosion substrate is completed is removed to transparent visible (exposing N-type AlGaInP layers) in such a way that photoresist or metal film do exposure mask by the label left according to the face P, the face N Ohmic contact pattern is aligned with the face P Ohmic contact pattern further according to mark, alignment methods are simpler more practical, degree of registration height reduces the loss of chip, improve chip Quality, it is easy to operate and more stable light-out effect can be obtained, it is suitble to large-scale production.
Description
Technical field
The present invention relates to a kind of electrode alignment methods of reversed polarity AlGaInP quaternary LED chip, belong to photoelectron technology neck
Domain.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
AlGaInP material system is initially the laser diode for being used to manufacture visible light, and AlGaInP material is ground by Japan
Study carefully personnel to propose in middle 1980s, LED the and LD device in that period is usually used to match with GaAs substrate
Ga0.5In0.5P as active light emitting area, emission wavelength 650nm is obtained wide in quaternary laser pen and DVD, player
General application.Later, researcher's discovery introduced Al component in GaInP can further shorten emission wavelength, still, if Al
Too high levels sharply decline the luminous efficiency that will lead to device, because when the Al content in GaInP is more than 0.53,
AlGaInP will become indirect band-gap semiconductor, so, AlGaInP material is generally only used to prepare emission wavelength 570nm or more
LED component.1997, the AlGaInP base of first multiple quantum wells (MQW) compound Bragg mirror (DBR) structure in the world
LED is born, and the LED component based on the design of such structure still occupies the very big share of LED low-end market so far.
Reversed polarity AlGaInP quaternary LED chip is widely used in high-power red-light LED field of display screen, antipole at this stage
Property i.e. carry out substrate displacement, the biggish GaAs substrate of extinction is replaced into monocrystalline conduction Si substrate or Sapphire Substrate etc., replace
After by the removal of GaAs substrate etching, erode corrosion barrier layer again and expose heavily doped layer, it is subsequent Au to be deposited on heavily doped layer
Film forms Ohmic contact, and subsequent photoetching prepares the face N Ohmic contact layer pattern again, to ensure that reversed polarity AlGaInP obtains preferably
Current expansion and higher brightness, the face N Ohmic contact pattern is generally aligned with the face P Ohmic contact pattern, because of reversed polarity
It is divided into opaque in the middle part of AlGaInP quaternary LED chip epitaxial layer, existing electrode alignment is generally when preparing the face N Ohmic contact pattern
Selectivity erodes partial region epitaxial layer, and the method has uncertainty, larger to the loss of chip, therefore how to have
The loss for being aligned and reducing chip of effect becomes problem main at this stage.
Chinese patent literature CN104518056A discloses a kind of preparation method of reversed polarity AlGaInP red LED chip,
It mainly passes through the insertion removal Waffer edge residual metal film between removing two work steps of GaAs substrate and corrosion barrier layer
Layer work step, avoids chip and is contaminated before N-type electrode is deposited, and guarantees that chip surface is clean, avoids in subsequent technique
There is electrode missing, lead to the problem of downshifting and reducing yield, is related to board marker figure, but this graphics area is larger makes
At biggish chip loss and unspecified related preparation process, the practicability is poor.
Chinese patent literature CN205723599U discloses the reversed polarity AlGaInP base LED of surface covering ITO, main
It is that metal bonding layer, ODR reflecting mirror, epitaxial layer, ITO extension current expansion are disposed in the permanent substrate for have back electrode
Layer and main electrode；The ODR reflecting mirror is made of metallic reflector interconnected and media coating, media coating and epitaxial layer
It is connected；Metallic reflector is connected with metal bonding layer；Ohmic contact is provided between ITO current extending and epitaxial layer
Point；ITO current expansion layer surface is in roughening shape.The invention is suitable for the current expansion of reversed polarity AlGaInP base LED N-type layer,
It is not directed to the alignment of N-type layer and p side electrode.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides that a kind of simple flow, degree of registration is higher and chip loss is less
Reversed polarity AlGaInP quaternary LED chip electrode alignment method.
The technical solution of the present invention is as follows:
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip, comprising:
(1) upper layer of Au film or AuBe film are deposited on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer, in the Au
The face P Ohmic contact pattern is prepared on film or AuBe film, under extension on piece or the center of left and right edges leaves two symmetrically
The label comprising the face P ohmic contact layer；The reversed polarity AlGaInP quaternary LED epitaxial wafer by it is lower from it is upper successively include GaAs
Substrate, barrier layer, opaque epitaxial layer, AlGaInP layers of N-type, reversed polarity quaternary LED epitaxial layer；
Compared with other metal films, Au film or AuBe film and the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer can be formed
Good Ohmic contact, also, Au film or the face the P Ohmic contact pattern of AuBe film preparation are apparent, it is easier to subsequent alignment.
(2) one layer of SiO is grown on the epitaxial wafer that step (1) generates2Film, the face P ohm that removal step (1) generates
SiO on contact pattern2Film obtains SiO2Film pattern；
SiO2Film can effectively play current blocking and current expansion effect；Also, because it is subsequent will be on the Ohmic contact pattern of the face P
SiO2Film removes, and lines are apparent at mark of correlation is easier to be aligned.
(3) successively evaporation metal mirror layer (Au or Ag) and metal bonding layer (Au on the epitaxial wafer that step (2) generate
Or TiAu)；In monocrystalline conduction Si substrate or sapphire substrate surface evaporation metal bonded layer (Au or TiAu), in the metallic bond
Close evaporation metal adhesive layer (In or Sn) on layer, then by reversed polarity AlGaInP quaternary LED epitaxial wafer and monocrystalline conduction Si substrate or
Sapphire Substrate is bonded together；
Metal mirror layer serves as a contrast monocrystalline conduction Si of the reversed polarity AlGaInP quaternary LED chip internal emission to after being bonded
The light emitting of bottom or Sapphire Substrate is gone back, and is finally emitted from AlGaInP layers of N-type, is improved light extraction efficiency.Metal bonding layer with
Metal bonding coating fusion, and the diffusion of barrier metal adhesive layer (In or Sn).Metal bonding coating can be more using the characteristic of In or Sn
Good merges with metal bonding layer.
(4) substrate is removed, the barrier layer is gone at the position in the face N corresponding with the label that step (1) is made
Except the opaque epitaxial layer, so that exposing the N-type at the position in the face N corresponding with the label that step (1) is made
AlGaInP layers, the face N Ohmic contact pattern is made, is directed at it with the face P Ohmic contact pattern；Because mark is opaque outer
Prolong layer to have removed, the subsequent face production N Ohmic contact pattern, make the face N Ohmic contact layer pattern by label alignment, complete with it is described
The alignment of the face P Ohmic contact pattern.
Electrode alignment method of the present invention use P wheat flour make label, N face the quasi- face P label method, it is more simple and practical,
The method for leaving two labels using upper and lower or left-right position, degree of registration is higher, and the area that the label of setting occupies is smaller, subtracts
The loss for having lacked chip improves the quality of chip, easy to operate, and can obtain more stable light-out effect, is suitble to scale
Production.
It is preferred according to the present invention, in the step (4), comprising:
A, film is sticked at the position in the face N corresponding with the label that step (1) is made；The face N can clearly be shown under strong light
It is existing；
B, with a thickness of 1.5-3 μm of positive photoresist on even on the film in the face N；
C, membrane removal is gone, the also related removal of the positive photoresist on film is put into baking oven entire epitaxial wafer and toasts, and dries
Roasting temperature is 90-105 DEG C, and baking time is 5-15 minutes；
D, entire epitaxial wafer to be put into corrosive liquid, the epitaxial layer exposed to no positive photoresist region corrodes,
Expose N-type AlGaInP layers, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern, makes itself and the face P
Ohmic contact pattern alignment.Because AlGaInP layers of N-type or more other AlGaInP quaternary epitaxial layers are light transmission as it can be seen that marking at this time
The label of the face P Ohmic contact pattern has been exposed at place, can carry out the alignment in the face N and the face P according to mark figure at this time.
Preferred according to the present invention, the film is blue film.Blue film viscosity is not strong, is not easy glue, will not influence subsequent alignment.
It is preferred according to the present invention, in the step (4), comprising:
A, High temperature-resistanadhesive adhesive tape is sticked at the position in the face N corresponding with the label that step (1) is made；The face the N energy under strong light
Clearly show；
B, the GeAu film that evaporation thickness is 0.3-0.6 μm on the face N；
C, High temperature-resistanadhesive adhesive tape, the positive photoresist also related removal on high-temperature plastic band are removed；
D, entire epitaxial wafer is put into corrosive liquid, the epitaxial layer exposed to the region of GeAu film corrodes, and exposes N
AlGaInP layers of type, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern, connects it with the described face P ohm
Touch pattern alignment.Because AlGaInP layers of N-type or more other AlGaInP quaternary epitaxial layers are light transmission as it can be seen that mark has been revealed at this time
The label of the face P Ohmic contact pattern out can carry out the alignment in the face N and the face P according to mark figure at this time.
It is preferred according to the present invention, in the step (1), Au film or AuBe film with a thickness of 0.3-0.4 μm.
The selection of Au film or AuBe film thickness, can more preferably complete the face P Ohmic contact preparation (thickness too thin preparation when scheme
Shape distortion) it can preferably complete the use for being directed at and reducing metal again (the too thick metal of thickness is increased using excessive cost).
Preferred according to the present invention, in the step (1), the label is.
Preferred according to the present invention, in the step (1), the label is square, area 0.25-1mm2.Setting
The area that occupies of label it is smaller, reduce the loss of chip.
It is preferred according to the present invention, in the step (2), SiO2Film with a thickness of 0.35-0.5 μm.With Au film or AuBe
Film thickness matching.
Preferred according to the present invention, in the step (3), the material of the metal mirror layer is Au or Ag, the gold
The material for belonging to bonded layer is Au or TiAu, and the material of the metal bonding coating is In or Sn.
The invention has the benefit that
1, electrode alignment method of the present invention is used in the method that P wheat flour makes label, N faces the quasi- face P label, more simply real
With；
2, the methods that the present invention leaves two labels using upper and lower or left-right position, degree of registration are higher；
3, the area that the label that the present invention is arranged occupies is smaller, reduces the loss of chip, improves the quality of chip, grasps
Make simplicity, and more stable light-out effect can be obtained, is suitble to large-scale production.
Detailed description of the invention
Fig. 1 is the cross-sectional view of reversed polarity quaternary LED chip produced by the present invention.
Fig. 2 is the cross-sectional view of reversed polarity quaternary LED chip made from step in the present invention (1).
Fig. 3 is the cross-sectional view of reversed polarity quaternary LED chip made from step in the present invention (2).
Fig. 4 is two schematic diagrames symmetrically marked of step in the present invention (1)；
Fig. 5 a is obtained chip schematic diagram after existing electrode alignment method；
Fig. 5 b is using the chip schematic diagram obtained after the present embodiment electrode alignment method.
1, GaAs substrate, 2, barrier layer GaInP, 3, the heavily doped GaAs of opaque epitaxial layer, 4, AlGaInP layers of N-type, 5, antipole
Property quaternary LED epitaxial layer, 6, Au film, 7, SiO2Film, 8, metal mirror layer, 9, metal bonding layer, 10, metal bonding coating, 11,
Si substrate, 12, the face N Ohmic contact pattern.
Specific embodiment
The present invention is described in detail below with reference to embodiment and Figure of description, but not limited to this.
Embodiment 1
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip, comprising:
(1) the Au film that upper a layer thickness is 0.3-0.4 μm is deposited on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer
6, the face P Ohmic contact pattern is prepared on Au film 6 by the method for conventional lithographic, under extension on piece or the center of left and right edges
Position leaves two symmetrical square indicias comprising the face P ohmic contact layer, area 0.25-1mm2, as shown in figure 4, ten
Word and X-type are subsequent alignment use, and black region is square label；Reversed polarity AlGaInP quaternary LED epitaxial wafer is by lower from upper
It successively include GaAs substrate 1, barrier layer GaInP 2, the heavily doped GaAs 3 of opaque epitaxial layer, N-type AlGaInP layer 4, reversed polarity four
First LED epitaxial layer 5；As shown in Figure 2.
Compared with other metal films, the face P of Au film 6 and reversed polarity AlGaInP quaternary LED epitaxial wafer can form good Europe
Nurse contact, also, the face P Ohmic contact pattern prepared by Au film 6 is apparent, it is easier to subsequent alignment.The selection of 6 thickness of Au film,
Preparation when thin preparation (thickness too aliasing) of the face P Ohmic contact can more preferably be completed and preferably complete to be aligned and subtract
The use of few metal (the too thick metal of thickness is increased using excessive cost).The area that the label of setting occupies is smaller, reduces core
The loss of piece.
(2) SiO that growth a layer thickness is 0.35-0.5 μm on the epitaxial wafer that step (1) generates2Film 7, passes through routine
Photolithography method removes the SiO on the face the P Ohmic contact pattern that step (1) generates2Film 7, obtains SiO2Film pattern；As shown in Figure 3.
SiO2Film 7 can effectively play current blocking and current expansion effect；Also, because subsequent by the face P Ohmic contact pattern
On SiO2Film 7 removes, and lines are apparent at mark of correlation is easier to be aligned.
(3) on the epitaxial wafer that step (2) generate by way of electron beam evaporation plating successively evaporation metal mirror layer 8
(Au or Ag) and metal bonding layer 9 (Au or TiAu)；It is steamed by way of electron beam evaporation plating on 11 surface of monocrystalline conduction Si substrate
Plating metal bonded layer 9 (Au or TiAu), on metal bonding layer 9 by way of electron beam evaporation plating evaporation metal adhesive layer 10
(In or Sn), then reversed polarity AlGaInP quaternary LED epitaxial wafer and monocrystalline conduction Si substrate 11 are bonded together；
Metal mirror layer 8 serves as a contrast monocrystalline conduction Si of the reversed polarity AlGaInP quaternary LED chip internal emission to after being bonded
The light emitting at bottom 11 is gone back, and is finally emitted from N-type AlGaInP layer 4, is improved light extraction efficiency.Metal bonding layer 9 and metal bond
Layer 10 merges, and the diffusion of barrier metal adhesive layer 10 (In or Sn).Metal bonding coating 10 can be more preferable using the characteristic of In or Sn
Merged with metal bonding layer 9.
(4) GaAs substrate 1, barrier layer GaInP 2 are removed by the method that conventional chemical corrodes, is made with step (1)
The corresponding face N of label position at, opaque epitaxial layer 3 is removed in such a way that photoresist or metal film do exposure mask so that
Expose N-type AlGaInP layer 4 at the position in the face N corresponding with the label that step (1) is made, makes the face N Ohmic contact pattern
12, it is directed at it with the face P Ohmic contact pattern；Because the opaque epitaxial layer of mark has removed, the subsequent face production N Ohmic contact figure
Shape, makes the face N Ohmic contact layer pattern by label alignment, and completion is aligned with the face P Ohmic contact pattern.Electrode alignment side of the present invention
Method use P wheat flour make label, N face the quasi- face P label method, it is more simple and practical, leave two using upper and lower or left-right position
The method of a label, degree of registration is higher, and the area that the label of setting occupies is smaller, reduces the loss of chip, improves core
The quality of piece, it is easy to operate, and more stable light-out effect can be obtained, it is suitble to large-scale production.Include:
A, the blue film of same size is sticked at the position in the face N corresponding with the label that step (1) is made；The N under strong light
Face can clearly show；Blue film viscosity is not strong, is not easy glue, will not influence subsequent alignment.
B, with a thickness of 1.5-3 μm of positive photoresist on even on the blue film in the face N；
C, blue film is removed, entire epitaxial wafer is put into baking oven and dries by the positive photoresist also related removal on blue film
Roasting, baking temperature is 90-105 DEG C, and baking time is 5-15 minutes；
D, entire epitaxial wafer to be put into corrosive liquid, the epitaxial layer exposed to no positive photoresist region corrodes,
Expose N-type AlGaInP layer 4, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern 12, makes itself and the face P Europe
The alignment of nurse contact pattern.Because the other AlGaInP quaternary epitaxial layers of N-type AlGaInP layer 4 or more are light transmission as it can be seen that marking at this time
The label of the face P Ohmic contact pattern has been exposed at place, can carry out the alignment in the face N and the face P according to mark figure at this time.The present embodiment
The cross-sectional view of reversed polarity quaternary LED chip obtained is as shown in Figure 1.
Effect pair after carrying out electrode alignment using existing electrode alignment method and using the present embodiment electrode alignment method
Than scheming as shown in Fig. 5 a, Fig. 5 b, Fig. 5 a is the chip schematic diagram that obtains after existing electrode alignment method；Fig. 5 b is using this implementation
The chip schematic diagram obtained after example electrode alignment method；Black region is chip loss region, is compared it is found that prior art core
Piece loss region is random region and area is larger, and after using the present embodiment electrode alignment method, the loss of chip subtracts significantly
It is few, improve the quality of chip.
Embodiment 2
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip described in embodiment 1, difference are, walk
Suddenly in (4), comprising:
A, the High temperature-resistanadhesive adhesive tape of same size is sticked at the position in the face N corresponding with the label that step (1) is made；Strong
The face N can clearly show under light；
B, the GeAu film that evaporation thickness is 0.3-0.6 μm by way of electron beam evaporation plating on the face N；
C, High temperature-resistanadhesive adhesive tape, the positive photoresist also related removal on high-temperature plastic band are removed；
D, entire epitaxial wafer is put into corrosive liquid, the epitaxial layer exposed to the region of GeAu film corrodes, and exposes N
Type AlGaInP layer 4, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern, makes itself and the face P Ohmic contact
Pattern alignment.Because the other AlGaInP quaternary epitaxial layers of N-type AlGaInP layer 4 or more are light transmission as it can be seen that mark has been revealed at this time
The label of the face P Ohmic contact pattern out can carry out the alignment in the face N and the face P according to mark figure at this time.
Embodiment 3
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip described in embodiment 1 or 2, difference exist
In,
In the step (1), it is 0.3- that upper a layer thickness is deposited on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer
0.4 μm of AuBe film.
Embodiment 4
A kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip described in embodiment 1-3 is distinguished and is,
In the step (3), at sapphire substrate surface evaporation metal bonded layer 9 (Au or TiAu), in metal bonding layer 9
Upper evaporation metal adhesive layer 10 (In or Sn), then reversed polarity AlGaInP quaternary LED epitaxial wafer and Sapphire Substrate are bonded in one
It rises.
Claims (9)
1. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip characterized by comprising
(1) upper layer of Au film or AuBe film are deposited on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer, in the Au film or
The face P Ohmic contact pattern is prepared on AuBe film, under extension on piece or the center of left and right edges leaves two symmetrical marks
Note；The reversed polarity AlGaInP quaternary LED epitaxial wafer by it is lower from it is upper successively include GaAs substrate, barrier layer, opaque extension
Layer, AlGaInP layers of N-type, reversed polarity quaternary LED epitaxial layer；
(2) one layer of SiO is grown on the epitaxial wafer that step (1) generates2Film, the face the P Ohmic contact that removal step (1) generates
SiO on figure2Film obtains SiO2Film pattern；
(3) successively evaporation metal mirror layer and metal bonding layer on the epitaxial wafer that step (2) generate；It is served as a contrast in monocrystalline conduction Si
Bottom or sapphire substrate surface evaporation metal bonded layer, the evaporation metal adhesive layer on the metal bonding layer, then by reversed polarity
AlGaInP quaternary LED epitaxial wafer is bonded together with monocrystalline conduction Si substrate or Sapphire Substrate；
(4) substrate, the barrier layer are removed, at the position in the face N corresponding with the label that step (1) is made, removes institute
Opaque epitaxial layer is stated, so that exposing the N-type AlGaInP at the position in the face N corresponding with the label that step (1) is made
Layer makes the face N Ohmic contact pattern, is directed at it with the face P Ohmic contact pattern.
2. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In in the step (4), comprising:
A, film is sticked at the position in the face N corresponding with the label that step (1) is made；
B, with a thickness of 1.5-3 μm of positive photoresist on even on the film in the face N；
C, membrane removal is gone, the also related removal of the positive photoresist on film toasts entire epitaxial wafer, baking temperature 90-105
DEG C, baking time is 5-15 minutes；
D, entire epitaxial wafer is put into corrosive liquid, the epitaxial layer exposed to no positive photoresist region corrodes, and exposes N
AlGaInP layers of type, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern, connects it with the described face P ohm
Touch pattern alignment.
3. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 2, feature exist
In the film is blue film.
4. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In in the step (4), comprising:
A, High temperature-resistanadhesive adhesive tape is sticked at the position in the face N corresponding with the label that step (1) is made；
B, the GeAu film that evaporation thickness is 0.3-0.6 μm on the face N；
C, High temperature-resistanadhesive adhesive tape, the positive photoresist also related removal on high-temperature plastic band are removed；
D, entire epitaxial wafer is put into corrosive liquid, the epitaxial layer exposed to the region of GeAu film corrodes, and exposes N-type
AlGaInP layers, it is seen that the label of the face P Ohmic contact pattern makes the face N Ohmic contact pattern, makes itself and the face P Ohmic contact
Pattern alignment.
5. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In, in the step (1), Au film or AuBe film with a thickness of 0.3-0.4 μm.
6. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In in the step (1), the label is.
7. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In in the step (1), the label is square, area 0.25-1mm2。
8. a kind of electrode alignment method of reversed polarity AlGaInP quaternary LED chip according to claim 1, feature exist
In, in the step (2), SiO2Film with a thickness of 0.35-0.5 μm.
9. the electrode alignment method of -8 any a kind of reversed polarity AlGaInP quaternary LED chips according to claim 1,
It is characterized in that, in the step (3), the material of the metal mirror layer is Au or Ag, and the material of the metal bonding layer is
Au or TiAu, the material of the metal bonding coating are In or Sn.
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| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203760507U (en) * | 2014-02-21 | 2014-08-06 | 程君 | LED eutectic wafer with alignment mark |
| CN104518056A (en) * | 2014-12-31 | 2015-04-15 | 山东浪潮华光光电子股份有限公司 | Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip |
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2017
- 2017-12-29 CN CN201711487966.2A patent/CN109994575B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203760507U (en) * | 2014-02-21 | 2014-08-06 | 程君 | LED eutectic wafer with alignment mark |
| CN104518056A (en) * | 2014-12-31 | 2015-04-15 | 山东浪潮华光光电子股份有限公司 | Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707196A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | LED chip with complementary pattern dielectric layer and manufacturing method |
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