CN110660886A - Preparation method of reversed polarity AlGaInP quaternary LED chip - Google Patents
Preparation method of reversed polarity AlGaInP quaternary LED chip Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention relates to a preparation method of a reverse polarity AlGaInP quaternary LED chip, which comprises the following steps: (1) sequentially growing a heavily doped N-type layer, a quantum well layer and a P-type layer on a substrate; (2) coarsening the surface of the P-type layer; (3) preparing a transparent conductive film or a composite film on the surface of the P-type layer; (4) preparing a glass layer on the transparent conductive film or the composite film; (5) removing the substrate, (6) etching the heavily doped N-type layer, the quantum well layer and the P-type layer to expose the transparent conductive film or the composite film corresponding to the P electrode; (7) preparing a P electrode on the exposed transparent conductive film or composite film, and preparing an N electrode on the heavily-doped N layer; (8) grinding the glass layer; (9) cutting to obtain the final product. The invention utilizes the low-temperature glass powder to form the light emitting layer which is used as a substrate support and a light emitting layer, and the process mode does not need high-pressure bonding and permanent substrate bonding.
Description
Technical Field
The invention relates to a preparation method of a reverse polarity AlGaInP quaternary LED chip, which is suitable for preparing reverse polarity chips and minified chips and belongs to the technical field of photoelectrons.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
AlGaInP material systems were originally used to fabricate visible light laser diodes and were first proposed by japanese researchers in the mid-eighties of the twentieth century. LED and LD devices of that time, typically using Ga matched to GaAs substrate0.5In0.5P is used as an active light emitting area, the light emitting wavelength is 650nm, and the light emitting diode is widely applied to quaternary laser pens, DVDs and players. Later, researchers found that introducing an Al component into GaInP could shorten the emission wavelength further, but if the Al content is too high, the emission efficiency of the device would be decreased sharply, because AlGaInP becomes an indirect bandgap semiconductor when the Al content in GaInP exceeds 0.53, so AlGaInP materials are generally used only to prepare LED devices with emission wavelengths above 570 nm. In 1997, AlGaInP-based LEDs of the first Multiple Quantum Well (MQW) composite bragg reflector (DBR) structure were produced in the world, and LED devices designed based on this structure still occupied a large share of the low-end market of LEDs to date.
Aluminum gallium indium phosphide (AlGaInP) based materials are rapidly being used to fabricate high power high brightness red and yellow LEDs. Although red LEDs made of AlGaInP-based materials are now commercially produced, LEDs having quaternary alloy materials as the multiple quantum well active region have extremely high internal quantum efficiency. However, due to the limitations of the material itself and the substrate, the external quantum efficiency of the conventional AlGaInP-LED is very low, which results in poor light-emitting efficiency of the conventional AlGaInP-LED, and the substrate GaAs is a light-absorbing material, which results in a large amount of light emitted from the active layer (MQW) toward the substrate being absorbed by the GaAs substrate, even though the conventional GaAs substrate is replaced by the metal all-around reflection (ODR) technology developed in the art, the amount of light emitted after being reflected to the active layer still causes a fixed ratio loss.
The reverse polarity AlGaInP quaternary LED chip is widely applied to the field of high-power red light LED display screens, substrate replacement is carried out on reverse polarity, a GaAs substrate with large light absorption is replaced by a single crystal conductive Si substrate or a sapphire substrate, the light efficiency can be improved by more than 20%, but the reverse polarity chip output is not high to the grade rate at the present stage due to the long reverse polarity process flow, the production has great influence on the production, sales and profits of the reverse polarity chip, the process is effectively simplified at the present stage, and the improvement of the reverse polarity chip output becomes the main research direction.
Chinese patent document CN104518056A discloses a method for preparing an AlGaInP red LED chip with reversed polarity, which comprises the following steps: (1) bonding a wafer of the GaAs substrate light-emitting diode and a silicon wafer together; (2) corroding the GaAs substrate, rotating the wafer 180 degrees along the vertical direction, and continuously corroding; (3) after the GaAs substrate is corroded, scraping the residual metal film layer on the edge of the wafer; (4) washing the surface of the wafer; etching the barrier layer on the surface of the wafer by using a sulfuric acid solution; (5) attaching a high-temperature-resistant adhesive tape strip with the area larger than that of the overlay register mark on the register mark of the wafer; (6) then carrying out evaporation on the N-type metal electrode, and corroding the window by using a window corrosive liquid; and obtaining a clear overlay register mark pattern after the etching is finished. In the patent, the relevant size is confirmed and then the operation is carried out, and the possibility of unstable process is higher due to the longer manufacturing process of the reversed polarity AlGaInP quaternary LED chip, and the final yield is slightly lower than the grade ratio.
Chinese patent document CN104157757A discloses a solution: a quaternary light emitting diode with a transparent substrate comprises an AlGaInP-LED epitaxial wafer, wherein the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened and used as a bonding surface, a thin film is plated on the bonding surface, then the thin film is bonded with the transparent substrate, and finally the GaAs substrate is removed. The film is one or the combination of more than two of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer and a magnesium chloride layer, and the transparent substrate is sapphire, aluminum nitride or glass.
Chinese patent document CN105914275A proposes a method for manufacturing a quad flip chip with a patterned transparent substrate on the surface, which includes the following steps: (1) providing a transparent substrate and a temporary substrate, and bonding the transparent substrate and the temporary substrate; (2) grinding and thinning the transparent substrate; (3) providing a light emitting epitaxial stack having opposing first and second surfaces, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; (4) forming a transparent bonding medium layer on the first surface of the light-emitting epitaxial lamination layer, and bonding the transparent bonding medium layer with the transparent substrate; (5) defining a first electrode area and a second electrode area on the second surface of the light-emitting epitaxial lamination, and manufacturing a second electrode and a second electrode; (6) the temporary substrate is removed.
The above two patents must use adhesive material, permanent (temporary) substrate, or even temporary substrate matching permanent substrate, and the process requirement is high temperature and high pressure, resulting in complex process, low yield and high cost.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of a reverse polarity AlGaInP quaternary LED chip;
the invention has simple process, forms the light emitting layer by using the low-temperature glass powder, the layer is used as a substrate support and a light emitting layer, and the process does not need high-pressure bonding and permanent substrate bonding.
Interpretation of terms:
1. the low-temperature glass powder is phosphate glass, has the softening temperature of 300-340 ℃, the sintering temperature of 350-380 ℃ and the expansion coefficient of 90-100, can be used as a low-temperature glass sealing adhesion sealing material for laser and photoelectric device materials, can adhere sealing alloy, glass, ceramic and copper-iron metal materials, has good adhesion effect and high air tightness, and is an ideal sealing material.
2. High purity water, which is water having a conductivity of less than 0.1. mu.s/cm at 25 ℃ and a residual salt content of less than 0.3mg/L and from which non-dielectric trace impurities such as bacteria, microorganisms, and particles are removed. The preparation method comprises distilling, membrane separation, ion exchange and sterilization. The method is mainly used in the electronic and microelectronic industries, and also used in the industries of food, paper making, medicine, electronics, nuclear industry and the like.
3. TCF, transparent conductive film.
4. AZO is a short name for aluminum-doped zinc oxide (ZnO) transparent conductive glass.
The technical scheme of the invention is as follows:
a preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially growing a heavily doped N-type layer, a quantum well layer and a P-type layer on a substrate;
(2) coarsening the surface of the P-type layer;
(3) preparing a transparent conductive film or a composite film on the surface of the P-type layer;
(4) preparing a glass layer on the transparent conductive film or the composite film;
(5) the substrate is removed and the substrate is removed,
(6) etching the heavily doped N-type layer, the quantum well layer and the P-type layer to expose the transparent conductive film or the composite film corresponding to the P electrode;
(7) preparing a P electrode on the exposed transparent conductive film or composite film, and preparing an N electrode on the heavily-doped N layer;
(8) grinding the glass layer;
(9) and cutting to obtain the independent reverse polarity AlGaInP quaternary LED chip.
The glass layer forms a light emitting layer which is used as a substrate support and a light emitting layer, and the process mode does not need high-pressure bonding and permanent substrate bonding. The invention relates to a method for manufacturing a high-temperature-resistant glass, which comprises the steps of melting, copolymerizing and crystallizing low-temperature glass powder in a high-temperature environment to generate silicon oxide boron metal salt to form glass, wherein the glass has the characteristics of good permeability, high hardness and stable chemical property, so that the glass is widely applied to the fields of electric vacuum, microelectronics and photoelectrons.
Preferably, in step (4), the step of preparing a glass layer on the transparent conductive film or the composite film includes:
A. mixing the low-temperature glass powder and high-purity water into a pasty mixture; the mass volume ratio of the low-temperature glass powder to the high-purity water is (1:0.5) - (1: 5);
B. coating the paste mixture on the transparent conductive film or the composite film, wherein the thickness of the paste mixture is 1-2 mm;
C. carrying out glass powder curing according to the following steps to form a glass layer; the method comprises the following steps:
standing for 5-10min at the constant temperature of 86 ℃;
② raising the temperature to 115 ℃ within 3-5min, standing for 3-5min under the constant temperature condition of 115 ℃;
thirdly, heating to 200 ℃ within 5min, and standing for 5min under the constant temperature condition of 200 ℃;
fourthly, the temperature is raised to 350-;
fifthly, heating to 200 ℃ within 20min, and taking out to obtain the product.
According to a preferred embodiment of the present invention, the step (2) of roughening the surface of the P-type layer includes: by using HF, HNO3And CH3Soaking the P-type layer in mixed corrosion liquid of COOH for 30-120s at the temperature of 25-35 ℃ of the corrosion liquid; HF and HNO of each substance in the mixed corrosive liquid3And CH3The volume ratio of COOH was 3:2: 4.
HF、HNO3And CH3COOH is liquid, and according to the volume ratio, the liquid is practically used, HF is more than or equal to 40 percent of liquid, HNO3 is more than or equal to 68 percent of liquid, CH3COOH is more than or equal to 36 percent of liquid, and the liquid is universal in the industry.
Because the refractive index of the semiconductor material is far greater than that of air, light generated inside the semiconductor material can be subjected to total reflection at an interface when the light is emitted, so that a large amount of light cannot be emitted, the external quantum efficiency is reduced, the surface microstructure is formed by coarsening, the total reflection can be reduced, and the light emitting efficiency is improved.
According to a preferred embodiment of the present invention, after the step (5), the following steps are performed:
a. coarsening the N-type heavily doped layer; because the refractive index of the semiconductor material is far greater than that of air, light generated inside the semiconductor material can be subjected to total reflection at an interface when the light is emitted, so that a large amount of light cannot be emitted, the external quantum efficiency is reduced, the surface microstructure is formed by coarsening, the total reflection can be reduced, and the light emitting efficiency is improved.
b. And preparing an ODR film on the surface of the N-type heavily doped layer. The light emitted downwards by the chip is reflected to the light-emitting surface, and the ODR has better reflection effect than the crystal-fixing glue and the bowl cup.
According to a preferred embodiment of the present invention, the step a, roughening the N-type heavily doped layer, includes: coarsening the N-type heavily doped layer by adopting an ion beam bombardment method or a solution wet method.
According to the invention, the material of the ODR film is SiO2、Ti2O3、Al2O3aO; or, the ODR film comprises SiO2、Ti2O3、Al2O3And aO, wherein the thickness of each film layer is 1/4 of the main light-emitting wavelength of the chip.
According to the invention, the step (8) is preferably to grind the glass layer to 100-180 um;
further preferably, in the step (8), the glass layer is polished to 110-;
most preferably, step (8) grinds the glass layer to 120 um.
The glass layer is used as a substrate to bear an epitaxial layer in the process, so that the epitaxial material is prevented from being broken, and the yield is ensured. Finally, the glass is ground to reach a thickness suitable for cutting chips, and if the glass is too thick, the glass is inconvenient to cut and too thin and is easy to crack. Meanwhile, the use requirements of the subsequent industry (packaging) are integrated, and the thickness is generally about 120 um.
According to the invention, the transparent conductive film is preferably made of ITO or AZO;
the composite film is made of SiO2And TCF.
Preferably, according to the present invention, the transparent conductive film or the composite film has a thickness of
Further preferably, the thickness of the transparent conductive film or the composite film is
Most preferably, the transparent conductive film or composite film has a thickness of
The thin film with the thickness achieves good current spreading effect while realizing ohmic contact.
The invention has the beneficial effects that:
1. the invention does not need high-pressure bonding, thereby reducing the difficulty of process realization.
2. The invention does not need an additional permanent substrate, and the glass powder is used as a bonding material and a permanent substrate.
3. The bonding process is simplified, so that the yield of the product is improved by 5-10%.
4. The invention solves the problems of abnormal splintering (overlarge pressure), abnormal cracking (insufficient pressure, bonding failure) and the like caused by high-pressure bonding and contact surface pressure deviation.
Drawings
Fig. 1 is a cross-sectional view of a reverse polarity LED quad chip manufactured in step (1) of embodiment 1 of the present invention;
fig. 2 is a cross-sectional view of a reverse polarity LED quad chip manufactured in step (2) of embodiment 1 of the present invention;
fig. 3 is a cross-sectional view of a reverse-polarity LED quad chip manufactured in step (3) of embodiment 1 of the present invention;
fig. 4 is a cross-sectional view of a reverse polarity LED quad chip manufactured in step (4) of embodiment 1 of the present invention;
fig. 5 is a cross-sectional view of a reverse-polarity LED quad chip manufactured in step (5) of embodiment 1 of the present invention;
fig. 6 is a cross-sectional view of a reverse-polarity LED quad chip manufactured in step (6) of embodiment 1 of the present invention;
fig. 7 is a cross-sectional view of a single reverse-polarity LED quad chip manufactured in embodiment 1 of the present invention;
the solar cell comprises a GaAs substrate, 2 a heavily doped N-type layer, 3 a quantum well layer, 4 a P-type layer, 5 an ITO film, 6a glass layer, 7 an N electrode and 8 a P electrode.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
A preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially growing a heavily-doped N-type layer 2 and a quantum well layer 3 on a GaAs substrate 1, and coarsening an epitaxial wafer P-type layer 4: the method comprises the steps of utilizing a mixed solution of HF, HNO3 and CH3COOH, wherein the volume ratio of the substances is 3:2:4, the temperature of corrosive liquid is 25-35 ℃, and the solution is soaked for 30-120 s. As shown in fig. 1.
(2) Sequentially preparing an ITO film 5 and SiO on the roughened surface of the P-type layer 42Film, thickness of ITO film 5
SiO2Thickness of film
As shown in fig. 2.
(3) And (3) mixing low-temperature glass powder and high-purity water into paste, coating the paste on the surface of the P-type layer 4 formed in the step (2), controlling the thickness of the glass powder to be 1-2mm, heating by using a furnace tube, keeping the furnace tube in a low vacuum state, and curing the glass powder according to the step 1 in the following table to finally form a glass layer 6.
TABLE 1
As shown in fig. 3;
(4) and removing the GaAs substrate 1 by using an etching solution to obtain the N-type heavily doped layer 2. The GaAs substrate 1 corrosive liquid is a mixed liquid of ammonia water, hydrogen peroxide and water, wherein the ammonia water in the mixed liquid: hydrogen peroxide: the volume ratio of water is 1:2: 6. As shown in fig. 4;
(5) and (3) etching the N-type heavily doped layer 2 and the quantum well layer 3 by utilizing a wet etching or dry etching process in cooperation with a photoresist mask, exposing the transparent conducting layer corresponding to the P electrode in the step (1), and etching a chip cutting path. As shown in fig. 5;
(6) and preparing an electrode pattern on the N-type surface by utilizing a photoetching process, and preparing a P electrode 8 and an N electrode 7 by utilizing electron beam evaporation, sputtering and other modes. As shown in fig. 6;
(7) grinding the epitaxial wafer of which the electrode is prepared, grinding and polishing the glass layer 6 to reach the desired thickness of 100-180 mu m,
(8) by laser dicing, individual chips were obtained. As shown in fig. 7.
In the embodiment 1, the bonding process is simplified, the yield of the product is improved by 5-10%, and the problems of abnormal splinters (excessive pressure), abnormal cracking (insufficient pressure, bonding failure) and the like caused by high-pressure bonding and contact surface pressure deviation are solved.
Example 2
A preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially growing a heavily-doped N-type layer 2 and a quantum well layer 3 on a GaAs substrate 1, and coarsening an epitaxial wafer P-type layer 4: the method comprises the steps of utilizing a mixed solution of HF, HNO3 and CH3COOH, wherein the volume ratio of the substances is 3:2:4, the temperature of corrosive liquid is 25-35 ℃, and the solution is soaked for 30-120 s.
(2) Sequentially preparing an ITO film and SiO on the roughened surface of the P-type layer 42Film of ITO film 5 thickness
SiO2Thickness of film
(3) And (3) mixing low-temperature glass powder and high-purity water into paste, coating the paste on the surface of the P-type layer 4 formed in the step (2), controlling the thickness of the glass powder to be 1-2mm, heating by using a furnace tube, keeping the furnace tube in a low vacuum state, and curing the glass powder according to the step 2 to finally form a glass layer 6.
TABLE 2
(4) And removing the GaAs substrate 1 by using an etching solution to obtain the N-type heavily doped layer 2. The GaAs substrate 1 corrosive liquid is a mixed liquid of ammonia water, hydrogen peroxide and water, wherein the ammonia water in the mixed liquid: hydrogen peroxide: the volume ratio of water is 1:2: 6.
(5) And coarsening the N-type heavily doped layer 2 in a mode of ion beam bombardment or solution wet coarsening. The ion beam bombardment is preferably performed by using Ar ions in combination with Cl2, and the solution is preferably prepared by using phosphoric acid with a mass concentration of 96%, hydrochloric acid with a mass concentration of 36.5% and pure water in a volume ratio of 1:3:5 or 2:5:10 as a roughening solution.
(6) Preparing ODR film on the surface of the coarsened N-type heavily doped layer 2, wherein the film can be SiO2\Ti2O3\Al2O3The thickness of each film is 1/4 of the main wavelength of the chip luminescence.
(7) And removing the P electrode 8, the N electrode 7 and ODR in the cutting path region by utilizing a photoetching mask and an etching process.
(8) And (3) etching the coarsened N-type heavily doped layer 2 by utilizing a wet etching or dry etching process in cooperation with a photoresist mask, exposing the transparent conductive layer corresponding to the P electrode 8 in the step (1), and etching a chip cutting path.
(9) And preparing an electrode pattern on the N-type surface by utilizing a photoetching process, and preparing a P electrode 8 and an N electrode 7 by utilizing electron beam evaporation, sputtering and other modes.
(10) Grinding the epitaxial wafer of which the electrode is prepared, grinding and polishing the glass layer 6 to reach the desired thickness of 100-180 mu m,
(11) by laser dicing, individual chips were obtained.
In the embodiment 2, the bonding process is simplified, the yield of the product is improved by 5-10%, and the problems of abnormal splinters (excessive pressure), abnormal cracking (insufficient pressure, bonding failure) and the like caused by high-pressure bonding and contact surface pressure deviation are solved.
Comparative example
A preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially growing a heavily-doped N-type layer 2 and a quantum well layer 3 on a GaAs substrate 1, and coarsening an epitaxial wafer P-type layer 4: the method comprises the steps of utilizing a mixed solution of HF, HNO3 and CH3COOH, wherein the volume ratio of the substances is 3:2:4, the temperature of corrosive liquid is 25-35 ℃, and the solution is soaked for 30-120 s.
(2) Preparing a bonding layer material on the surface of the roughened P-type layer 4, wherein the material can be one or a combination of more than two of metal, transparent conductive material, silicon oxide layer, silicon nitride layer, aluminum oxide layer and magnesium chloride layer.
(3) And (3) manufacturing the bonding layer material shown in the step (2) on the substrate surface, wherein the material can be one or a combination of more than two of metal, transparent conductive material, silicon oxide layer, silicon nitride layer, aluminum oxide layer and magnesium chloride layer.
(4) Bonding the bonding layers obtained in the step (2) and the step (3) at high temperature and high pressure.
(5) And removing the GaAs substrate 1 by using an etching solution to obtain the N-type heavily doped layer 2. The GaAs substrate 1 corrosive liquid is a mixed liquid of ammonia water, hydrogen peroxide and water, wherein the ammonia water in the mixed liquid: hydrogen peroxide: the volume ratio of water is 1:2: 6.
(6) And (3) etching the N-type heavily doped layer 2 and the quantum well layer 3 by utilizing a wet etching or dry etching process in cooperation with a photoresist mask, exposing the transparent conducting layer corresponding to the P electrode in the step (1), and etching a chip cutting path.
(7) And preparing an electrode pattern on the N-type surface by utilizing a photoetching process, and preparing a P electrode 8 and an N electrode 7 by utilizing electron beam evaporation, sputtering and other modes.
(8) Grinding the epitaxial wafer of which the electrode is prepared, grinding and polishing the glass layer 6 to reach the desired thickness of 100-180 mu m,
(9) and obtaining the independent chip by utilizing laser cutting and grinding wheel cutter cutting.
Bonding materials used in the prior art need to be bonded at high temperature and high pressure, and once the pressure is uneven in the bonding process, the phenomenon of bonding insecurity occurs; in the prior art, if a metal bonding material is used, a grinding wheel cutter is required to be used for cutting, a combined scheme of laser and grinding wheel cutting is formed, and the production efficiency is reduced.
Claims (10)
1. A preparation method of a reverse polarity AlGaInP quaternary LED chip is characterized by comprising the following steps:
(1) sequentially growing a heavily doped N-type layer, a quantum well layer and a P-type layer on a substrate;
(2) coarsening the surface of the P-type layer;
(3) preparing a transparent conductive film or a composite film on the surface of the P-type layer;
(4) preparing a glass layer on the transparent conductive film or the composite film;
(5) the substrate is removed and the substrate is removed,
(6) etching the heavily doped N-type layer, the quantum well layer and the P-type layer to expose the transparent conductive film or the composite film corresponding to the P electrode;
(7) preparing a P electrode on the exposed transparent conductive film or composite film, and preparing an N electrode on the heavily-doped N layer;
(8) grinding the glass layer;
(9) and cutting to obtain the independent reverse polarity AlGaInP quaternary LED chip.
2. The method for preparing an AlGaInP quaternary LED chip with reversed polarity according to claim 1, wherein the step (4) of preparing a glass layer on the transparent conductive film or the composite film comprises:
A. mixing the low-temperature glass powder and high-purity water into a pasty mixture; the mass volume ratio of the low-temperature glass powder to the high-purity water is (1:0.5) - (1: 5);
B. coating the paste mixture on the transparent conductive film or the composite film, wherein the thickness of the paste mixture is 1-2 mm;
C. carrying out glass powder curing according to the following steps to form a glass layer; the method comprises the following steps:
standing for 5-10min at the constant temperature of 86 ℃;
② raising the temperature to 115 ℃ within 3-5min, standing for 3-5min under the constant temperature condition of 115 ℃;
thirdly, heating to 200 ℃ within 5min, and standing for 5min under the constant temperature condition of 200 ℃;
fourthly, the temperature is raised to 350-;
fifthly, heating to 200 ℃ within 20min, and taking out to obtain the product.
3. The method as claimed in claim 1, wherein the step (2) of roughening the surface of the P-type layer comprises: by using HF, HNO3And CH3Soaking the P-type layer in mixed corrosion liquid of COOH for 30-120s at the temperature of 25-35 ℃ of the corrosion liquid; HF and HNO of each substance in the mixed corrosive liquid3And CH3The volume ratio of COOH was 3:2: 4.
4. The method as claimed in claim 1, wherein the following steps are performed after the step (5):
a. coarsening the N-type heavily doped layer;
b. and preparing an ODR film on the surface of the N-type heavily doped layer.
5. The method as claimed in claim 4, wherein the step a of roughening the N-type heavily doped layer comprises: coarsening the N-type heavily doped layer by adopting an ion beam bombardment method or a solution wet method.
6. The method as claimed in claim 4, wherein the ODR film is made of SiO2、Ti2O3、Al2O3aO; or, the ODR film comprises SiO2、Ti2O3、Al2O3And aO, wherein the thickness of each film layer is 1/4 of the main light-emitting wavelength of the chip.
7. The method as claimed in claim 1, wherein in the step (8), the glass layer is polished to a thickness of 100-180 um;
further preferably, in the step (8), the glass layer is polished to 110-;
most preferably, step (8) grinds the glass layer to 120 um.
8. The method of claim 1, wherein the transparent conductive film is made of ITO or AZO; the composite film is made of SiO2And TCF.
9. The method as claimed in claim 1, wherein the transparent conductive film or the composite film has a thickness of
10. The method as claimed in claim 1, wherein the transparent conductive film or the composite film has a thickness of
Further, the method can be used for preparing a novel materialPreferably, the thickness of the transparent conductive film or the composite film is
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