CN114203862A - Reworking method of reversed-polarity GaAs-based AlGaInP red LED chip - Google Patents
Reworking method of reversed-polarity GaAs-based AlGaInP red LED chip Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 53
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 45
- 230000000903 blocking effect Effects 0.000 claims description 17
- 239000011259 mixed solution Substances 0.000 claims description 17
- 230000002159 abnormal effect Effects 0.000 claims description 15
- 238000009210 therapy by ultrasound Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000005856 abnormality Effects 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 44
- 235000012431 wafers Nutrition 0.000 description 39
- 238000010586 diagram Methods 0.000 description 7
- 238000007788 roughening Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention relates to a reworking method of a reverse polarity GaAs-based AlGaInP red LED chip, which comprises the following steps: (1) manufacturing a bonding sheet: the bonding piece is a bonded permanent substrate structure and a temporary substrate structure, the permanent substrate structure comprises a silicon permanent substrate, a second reflector layer and a metal adhesion layer from bottom to top, the temporary substrate structure comprises a first reflector layer, a current barrier layer, a P-type GaAs layer, a P-type AlGaInP layer, a quantum well layer, an N-type AlGaInP layer, an N-type GaAs layer, a barrier layer, a buffer layer and a GaAs temporary substrate from bottom to top, and a P-type ohmic contact point is also arranged in the current barrier layer; (2) and (4) reworking treatment: separating the permanent substrate structure from the temporary substrate structure, and removing the first reflector layer; (3) manufacturing a subsequent tube core; the effective reworking manufacturing method improves the final tube core yield of the flip chip.
Description
Technical Field
The invention relates to a specific manufacturing method for reworking a reverse polarity GaAs-based AlGaInP red light emitting diode chip, belonging to the technical field of semiconductor processing.
Background
The AlGaInP four-element red LED has the advantages of strong current bearing capacity, high luminous efficiency, high temperature resistance and the like, has an irreplaceable position in illumination, display and indicator lamps, and is widely applied to various fields of illumination. The AlGaInP quaternary red light LED traditional process comprises an epitaxial structure, wherein the epitaxial structure comprises a temporary substrate layer, a buffer layer, a barrier layer, an N-type gallium arsenide ohmic contact layer, a quantum well layer, a P-type AlGaInP limiting layer and a P-type GaAs layer, a Si sheet is used as a permanent substrate for replacement and fixation, a P-type electrode grows on the exposed AlGaInP layer, the P-type electrode is made of Cr, Ni and Ge serving as the contact layer, Ti and Pt serving as transition layers, and Al and Au are used as main electrode layers for manufacturing the electrode structure. In order to obtain a higher brightness LED chip, a metal reflector is usually fabricated on the permanent substrate above the ohmic contact, and the two are bonded together by an adhesion metal layer to achieve the purpose of replacing the substrate.
The GaAs-based AlGaInP red LED is generally manufactured according to the following specific steps: 1) manufacturing a temporary substrate structure: taking the epitaxial wafer as a temporary substrate, and growing an epitaxial structure; then, manufacturing a transverse current blocking layer, an ohmic contact layer of a P-type electrode window layer and a metal reflector layer on the epitaxial structure; 2) manufacturing a permanent substrate structure: growing a reflector layer and a metal adhesion layer on a permanent substrate sheet; 3) bonding and removing the temporary substrate: bonding the structures manufactured in the step 1) and the step 2) together at high temperature, and removing the GaAs substrate and the buffer layer on the epitaxial wafer by using corrosive liquid or a physical lapping method; 4) finger preparation: manufacturing a metal layer on the surface of the heavily doped GaAs manufactured in the step 3), manufacturing a metal fin (an extension electrode) by a corrosion method, corroding the heavily doped GaAs except for finger to expose the bottom N-type AlGaInP coarsening layer, and performing metal alloy; 5) coarsening and grooving: protecting the finger region, roughening other regions, and grooving; 6) manufacturing a P-surface electrode: manufacturing a P-surface metal electrode in the P-surface area by a stripping or corrosion method; 7) permanent substrate thinning: thinning the back of the permanent substrate silicon wafer to a thickness suitable for scratching through a chemical or physical mode; 8) manufacturing an N-surface electrode on the thinned surface; 9) and (3) cutting the wafer manufactured in the step 8) into single tube cores by using a laser cutting machine and a splitting machine. The whole manufacturing process is complicated, the manufacturing steps are more, and the error probability is higher during each step of operation. Particularly, bonding and evaporation plating of a reflector layer are used as the most important process steps of a flip structure of a reverse polarity product, the manufacturing process is relatively difficult, the probability of occurrence of abnormality is relatively high, the cost of an epitaxial wafer is high, and the loss is large if the epitaxial wafer is directly scrapped, so that in order to reduce the loss in manufacturing, targeted rework processing can be tried on the epitaxial wafer from the reflector layer part to avoid the loss of the epitaxial wafer material.
Chinese patent document CN106098867A (201610524743.8) proposes a chip rework method for improving the rework efficiency of LED chips, which includes the steps of: cleaning an LED chip needing to be reworked, removing a P-type electrode and an N-type electrode of the cleaned LED chip through a wet chemical etching process, transferring an electrode pattern from a photomask to the surface of the LED chip, exposing a P-type electrode area to be evaporated and an N-type electrode area, and manufacturing the P-type electrode and the N-type electrode. However, the patent is mainly directed to the rework of the positive polarity LED chip, and is not related to the rework of the complicated GaAs-based quaternary reverse polarity flip chip manufacturing process, and is also a conventional rework processing method for the electrode.
In summary, it is necessary to research an effective rework method for a reverse-polarity GaAs-based AlGaInP quaternary flip-chip red LED when an abnormality occurs in a bonding process or a pre-bonding process, so as to improve a final die yield of the flip-chip.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a reworking method of a GaAs-based AlGaInP red LED chip with reversed polarity; the invention relates to a process method for avoiding loss of an epitaxial wafer by reworking the epitaxial wafer when abnormal manufacturing occurs in the manufacturing process of a reverse polarity GaAs-based AlGaInP red LED flip-chip structure.
The technical scheme of the invention is as follows:
a reworking manufacturing method for abnormal bonding of a red light LED tube core of a reverse-polarity GaAs-based AlGaInP quaternary flip-chip structure comprises the following steps:
(1) manufacturing a bonding sheet: the bonding sheet comprises a permanent substrate structure and a temporary substrate structure which are bonded together from bottom to top, wherein the permanent substrate structure comprises a silicon permanent substrate, a second reflecting mirror layer and a metal adhesion layer from bottom to top, the temporary substrate structure comprises a first reflecting mirror layer, a current blocking layer, a P-type GaAs layer, a P-type AlGaInP layer, a quantum well layer, an N-type AlGaInP layer, an N-type GaAs layer, a blocking layer, a buffer layer and a GaAs temporary substrate from bottom to top, and a P-type ohmic contact point is further arranged in the current blocking layer;
(2) and (4) reworking treatment: separating the permanent substrate structure and the temporary substrate structure and removing the first mirror layer; after the reworking treatment, only the residual current barrier layer and the P-type ohmic contact point are arranged on the surface of the epitaxial wafer.
(3) Manufacturing a subsequent tube core: the method comprises the following steps:
regrowing the first reflector layer on the current blocking layer, and bonding the permanent substrate structure and the temporary substrate structure together;
removing the GaAs temporary substrate and the buffer layer;
making an extension electrode and a P-type main electrode on the barrier layer;
fourthly, manufacturing an N-type electrode on the silicon permanent substrate;
using a scratching device to divide the tube core into single tube cores.
Preferably, step (2) comprises the following steps:
A. carrying out ultrasonic treatment on the bonding sheet prepared in the step (1); the ultrasonic treatment further reduces the adhesiveness between the mirror layer and the ohmic contact point + the current blocking layer of the plating layer, so that the mixed solution of hydrochloric acid and hydrogen peroxide is allowed to enter the mirror layer of the wafer in the subsequent treatment.
B. B, soaking the bonding piece subjected to ultrasonic treatment in the step A in a mixed solution of hydrochloric acid and hydrogen peroxide until a large number of bubbles emerge at the bonding position of the permanent substrate structure and the temporary substrate structure of the bonding piece; after the mixed solution of hydrochloric acid and hydrogen peroxide is soaked and corroded, the reflector layer is gradually separated from the ohmic contact point and the current barrier layer from the Ti on the bottom layer, and after the edge area of the wafer is corroded for a period of time, tools such as a blade and the like can be inserted between the two layers;
C. a blade is used to separate the bonded permanent substrate structure from the temporary substrate structure.
Preferably, in the step A, the bonding sheet prepared in the step (1) is placed in an ultrasonic device for ultrasonic treatment, and the ultrasonic frequency is 90-120 KHz;
further preferably, the ultrasonic frequency is 100 KHz.
The selection of ultrasonic frequency is important, the bonded wafer is easy to split when the frequency is too high, and the bonding adhesion is not reduced when the frequency is too low. The parameters provided by the invention can not only achieve the purpose of reducing the adhesiveness of the adhesive, but also can not generate splinters.
Preferably, in the step B, the volume ratio of the hydrochloric acid to the hydrogen peroxide in the mixed solution of the hydrochloric acid and the hydrogen peroxide is (1:0.5) - (1: 5);
further preferably, the volume ratio of the hydrochloric acid to the hydrogen peroxide is 1: 1.
Preferably, in step (2), the wafer is slightly etched in dilute hydrochloric acid to remove the remaining first mirror layer.
Preferably, in step (1), the bonding sheet is prepared, which includes the following steps:
1) and (3) growing an epitaxial structure: sequentially manufacturing the buffer layer, the barrier layer, the N-type GaAs layer, the N-type AlGaInP layer, the quantum well layer, the P-type AlGaInP layer and the P-type GaAs layer on the GaAs temporary substrate;
2) growing the ohmic contact layer on the epitaxial structure grown in the step 1), making a mask pattern by using photoresist, and corroding the P-type ohmic contact;
3) growing the current barrier layer on the surface of the wafer grown in the step 2), making a mask pattern by using photoresist, and etching off the current barrier layer on the P-type ohmic contact point;
4) carrying out P-side alloying on the wafer grown in the step 3) by using rapid alloying equipment to form good ohmic contact;
5) putting the wafer grown in the step 4) into an evaporation table for evaporating the first reflector layer;
6) manufacturing the permanent substrate structure: growing the second reflector layer on the surface of the silicon wafer by using the silicon wafer as a silicon permanent substrate, and growing a metal adhesion layer on the surface of the second reflector layer;
7) pasting the front surfaces of the permanent substrate structure and the temporary substrate structure together; and after the chip is pasted, putting the wafer into an oven for high-temperature baking, and bonding the permanent substrate structure and the temporary substrate structure together.
According to the invention, the buffer layer is preferably made of GaInP;
the first reflecting mirror layer and the second reflecting mirror layer are made of one or a combination of more of Ti, Pt, Au, Ni, Ag and AuBe; taking metal Ti as bottom metal, Au as top metal and other metals as transition layers;
the metal adhesion layer is made of one or a combination of more of Sn, In, Au and Ag;
preferably, according to the invention, the conditions of the P-plane alloy are: the temperature is 480-600 ℃ and the time is 15s-5 min. The time is controlled according to the temperature, and in principle, the time is shorter as the temperature is higher, but the minimum time is not less than 15 seconds, and the maximum time is not more than 5 minutes.
Preferably, in step 7), the temperature for high-temperature bonding is 200-240 ℃ and the time is 20-60 min.
Preferably, in the second step, the GaAs temporary substrate is removed by using a mixed solution of ammonia water and hydrogen peroxide, the volume ratio of ammonia water to hydrogen peroxide in the mixed solution of ammonia water and hydrogen peroxide is 1: 1-1: 10, and the buffer layer is removed by using strong acid;
further preferably, the buffer layer is removed using hydrochloric acid or sulfuric acid. The etching time is adjusted according to the thickness of the grown buffer layer.
Preferably, in the third step, a finger pattern is etched on the barrier layer, an extension electrode is manufactured on the finger pattern, and a region outside the finger pattern is roughened and grooved; an electrode mask pattern is made through photoresist, a P-type main electrode is vapor-deposited, and the P-type main electrode is made through a stripping method.
According to a preferred embodiment of the present invention, in the step (iv), the silicon permanent substrate is thinned, and an N-side electrode is formed.
The invention has the beneficial effects that:
1. in the invention, the metal part of the ohmic contact point is fused into the surface of the epitaxial layer (the P-type GaAs layer) through the P-side alloy, the contact with the epitaxial layer is very firm, the compactness of the current blocking layer and the adhesion with the epitaxial layer are enhanced through high temperature, and the adhesion of the prepared reflector layer is different from that of the two layers because the reflector layer is not subjected to high temperature alloy. The adhesion between the ohmic contact point and the current barrier layer of the reflecting mirror layer and the coating is further reduced through high-power ultrasound in the rework process, so that the possibility is provided for a mixed solution of hydrochloric acid and hydrogen peroxide to enter the reflecting mirror layer of the wafer in the subsequent treatment, after the mixed solution of hydrochloric acid and hydrogen peroxide is soaked and corroded, the reflecting mirror layer is gradually separated from the ohmic contact point and the current barrier layer from Ti on the bottom layer, after the edge area of the wafer is corroded for a period of time, tools such as a blade and the like can be inserted between the two layers to separate the two layers, and then a small amount of residual reflecting mirror layer is removed.
2. In the invention, the selection of ultrasonic frequency is important, the bonded wafer is easy to split when the frequency is too high, and the purpose of reducing the adhesion of the bonded wafer cannot be achieved when the frequency is too low. The parameters provided by the invention can not only achieve the purpose of reducing the adhesiveness of the adhesive, but also can not generate splinters.
3. In the invention, after the reworking step is soaked in the hydrogen peroxide solution, the two wafers are separated by using the blade, which is more critical, and the two wafers are separated by using a physical method in the step, because the tension in the solution is existed, and the permanent substrate and the temporary substrate are relatively firmly attached regardless of the corrosion time.
4. The process method designed by the invention is simple and easy to operate, does not need to introduce special equipment, completes the rework treatment of reverse polarity quaternary inverted abnormal products by using lower cost, greatly reduces the manufacturing cost, and is suitable for the manufacturing process of all GaAs-based AlGaInP quaternary red light LED chips.
Drawings
FIG. 1 is a schematic structural diagram of the product obtained in step 1);
FIG. 2 is a schematic structural diagram after step 5) is completed;
FIG. 3 is a schematic view of the structure of the permanent substrate after step 6) is completed;
FIG. 4 is a schematic structural diagram of bonding molding after step 7) is completed;
FIG. 5 is a schematic structural diagram after completion of step two;
FIG. 6 is a schematic diagram of the structure after the roughening is completed;
FIG. 7 is a schematic structural diagram of the P-type main electrode after the P-type main electrode is completed;
fig. 8 is a schematic structural diagram after the N-face electrode is completed in step (iv).
001, GaAs temporary substrate, 002 buffer layer, 003 barrier layer, 004N-type GaAs layer, 005N-type AlGaInP layer, 006 quantum well layer, 007P-type AlGaInP layer, 008P-type GaAs layer, 009P-type ohmic contact, 010 current blocking layer, 011, first mirror layer, 012, silicon permanent substrate, 013 second mirror layer, 014 metal adhesion layer, 015 expansion electrode, 016P-type main electrode, 017, N-type electrode.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
A reworking manufacturing method for abnormal bonding of a red light LED tube core of a reverse-polarity GaAs-based AlGaInP quaternary flip-chip structure comprises the following steps:
(1) manufacturing a bonding sheet: the bonding sheet comprises a permanent substrate structure and a temporary substrate structure which are bonded together from bottom to top, wherein the permanent substrate structure comprises a silicon permanent substrate 012, a second mirror layer 013 and a metal adhesion layer 014 from bottom to top, the temporary substrate structure comprises a first mirror layer 011, a current blocking layer 010, a P-type GaAs layer 008, a P-type AlGaInP layer 007, a quantum well layer 006, an N-type AlGaInP layer 005, an N-type GaAs layer 004, a blocking layer 003, a buffer layer 002 and a GaAs temporary substrate 001 from bottom to top, and a P-type ohmic contact point 009 is further arranged in the current blocking layer 010;
(2) and (4) reworking treatment: separating the permanent substrate structure from the temporary substrate structure, and removing the first mirror layer 011; after the rework process, only the current barrier layer 010 and the P-type ohmic contact 009 remain on the surface of the epitaxial wafer.
(3) Manufacturing a subsequent tube core: the method comprises the following steps:
regrowing a first mirror layer 011 on the current blocking layer 010, and bonding a permanent substrate structure and a temporary substrate structure together;
removing the GaAs temporary substrate 001 and the buffer layer 002; the completed structure is shown in fig. 5.
Making an extended electrode 015 and a P-type main electrode 016 on the barrier layer 003;
fourthly, an N-type electrode 017 is manufactured on the silicon permanent substrate 012;
using a scratching device to divide the tube core into single tube cores.
Example 2
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 1 is characterized in that:
the step (2) comprises the following steps:
A. carrying out ultrasonic treatment on the bonding sheet prepared in the step (1); the ultrasonic treatment further reduces the adhesion between the mirror layer and the ohmic contact point of the plating layer + the current blocking layer 010, so that it is possible for the mixed solution of hydrochloric acid and hydrogen peroxide to enter the mirror layer of the wafer in the subsequent treatment.
B. B, soaking the bonding piece subjected to ultrasonic treatment in the step A in a mixed solution of hydrochloric acid and hydrogen peroxide until a large number of bubbles emerge at the bonding position of the permanent substrate structure and the temporary substrate structure of the bonding piece; after the mixed solution of hydrochloric acid and hydrogen peroxide is soaked and corroded, the reflector layer is gradually separated from the ohmic contact point and the current barrier layer 010 from Ti on the bottom layer, and after the edge area of the wafer is corroded for a period of time, tools such as a blade and the like can be inserted between the two layers;
C. a blade is used to separate the bonded permanent substrate structure from the temporary substrate structure.
In the step A, the bonding piece prepared in the step (1) is placed in an ultrasonic device for ultrasonic treatment, and the ultrasonic frequency is 90-120 KHz.
Example 3
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 2 is characterized in that: the ultrasonic frequency is 100 KHz.
The selection of ultrasonic frequency is important, the bonded wafer is easy to split when the frequency is too high, and the bonding adhesion is not reduced when the frequency is too low. The parameters provided by the invention can not only achieve the purpose of reducing the adhesiveness of the adhesive, but also can not generate splinters.
Example 4
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 2 is characterized in that:
in the step B, the volume ratio of the hydrochloric acid to the hydrogen peroxide in the mixed solution of the hydrochloric acid and the hydrogen peroxide is (1:0.5) - (1: 5).
Example 5
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 4 is characterized in that: the volume ratio of the hydrochloric acid to the hydrogen peroxide is 1: 1.
Example 6
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 1 is characterized in that: in the step (2), the wafer is put into dilute hydrochloric acid for micro-etching, and the residual first reflector layer 011 is removed.
Example 7
The reworking manufacturing method for the abnormal bonding of the red LED die of the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure in the embodiment 1 is characterized in that: in the step (1), the bonding sheet is manufactured, which comprises the following steps:
1) and (3) growing an epitaxial structure: sequentially manufacturing a buffer layer 002, a barrier layer 003, an N-type GaAs layer 004, an N-type AlGaInP layer 005, a quantum well layer 006, a P-type AlGaInP layer 007 and a P-type GaAs layer 008 on a GaAs temporary substrate 001; the completed structure is shown in fig. 1.
2) Growing an ohmic contact layer on the epitaxial structure grown in the step 1), making a mask pattern by using photoresist, and corroding a P-type ohmic contact point 009;
3) growing a current barrier layer 010 on the surface of the wafer grown in the step 2), making a mask pattern by using photoresist, and corroding the current barrier layer 010 on the P-type ohmic contact point 009;
4) carrying out P-side alloying on the wafer grown in the step 3) by using rapid alloying equipment to form good ohmic contact; conditions of the P-side alloy: the temperature is 480-600 ℃ and the time is 15s-5 min. The time is controlled according to the temperature, and in principle, the time is shorter as the temperature is higher, but the minimum time is not less than 15 seconds, and the maximum time is not more than 5 minutes.
5) Putting the wafer grown in the step 4) into an evaporation table, and evaporating a first reflector layer 011; the completed structure is shown in fig. 2.
6) Manufacturing a permanent substrate structure: using a silicon wafer as a silicon permanent substrate 012, growing a second mirror layer 013 on the surface of the silicon wafer, and growing a metal adhesion layer 014 on the surface of the second mirror layer 013; the completed permanent substrate structure is shown in fig. 3.
7) Pasting the front surfaces of the permanent substrate structure and the temporary substrate structure together; after the chip mounting is finished, the wafer is placed into an oven for high-temperature baking, and the permanent substrate structure and the temporary substrate structure are bonded together. The temperature of the high-temperature bonding is 200-240 ℃, and the time is 20-60 min. The structure of the bonding formation after completion is shown in fig. 4.
The buffer layer 002 is made of GaInP; the first reflecting mirror layer 011 and the second reflecting mirror layer 013 are made of one or a combination of more of Ti, Pt, Au, Ni, Ag and AuBe; taking metal Ti as bottom metal, Au as top metal and other metals as transition layers; the metal adhesion layer 014 is made of one or a combination of more of Sn, In, Au and Ag;
example 8
A rework method for bonding abnormality of red LED die of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to any one of embodiments 1-7, which is different from the following:
in the second step, the GaAs temporary substrate 001 is removed by using a mixed solution of ammonia water and hydrogen peroxide, the volume ratio of ammonia water to hydrogen peroxide in the mixed solution of ammonia water and hydrogen peroxide is 1: 1-1: 10, and the buffer layer 002 is removed by using strong acid;
step three, photoetching a finger pattern on the barrier layer 003, manufacturing an extension electrode 015 on the finger pattern, roughening the region outside the finger pattern, and grooving; the structure after finishing the roughening is shown in fig. 6. An electrode mask pattern is made by photoresist, the P-type main electrode 016 is evaporated, and the P-type main electrode 016 is made by a stripping method. The structure after completing the P-type main electrode 016 is shown in fig. 7.
In the fourth step, the silicon permanent substrate 012 is thinned, and an N-side electrode is manufactured. The structure after completion of the N-face electrode is shown in fig. 8.
Example 9
The reworking method for the abnormal bonding of the red LED die of the reverse-polarity GaAs-based AlGaInP quaternary flip-chip structure in embodiment 8 is different from the following steps: the buffer layer 002 is removed using hydrochloric acid or sulfuric acid. The etching time is adjusted according to the thickness of the grown buffer layer 002.
In the 1000 red light LED epitaxial wafers with the reverse polarity GaAs-based AlGaInP quaternary flip-chip structure, 34 abnormal products exist, the traditional method does not perform any treatment, the yield is 96.60%, and after the treatment by the reworking manufacturing method in the embodiment, the yield is 99.92%, so that the manufacturing cost is greatly reduced, and the yield is improved. Specifically, as shown in table 1:
TABLE 1
Claims (10)
1. A reworking manufacturing method for abnormal bonding of a red light LED tube core of a reverse-polarity GaAs-based AlGaInP quaternary flip-chip structure is characterized by comprising the following steps of:
(1) manufacturing a bonding sheet: the bonding sheet comprises a permanent substrate structure and a temporary substrate structure which are bonded together from bottom to top, wherein the permanent substrate structure comprises a silicon permanent substrate, a second reflecting mirror layer and a metal adhesion layer from bottom to top, the temporary substrate structure comprises a first reflecting mirror layer, a current blocking layer, a P-type GaAs layer, a P-type AlGaInP layer, a quantum well layer, an N-type AlGaInP layer, an N-type GaAs layer, a blocking layer, a buffer layer and a GaAs temporary substrate from bottom to top, and a P-type ohmic contact point is further arranged in the current blocking layer;
(2) and (4) reworking treatment: separating the permanent substrate structure and the temporary substrate structure and removing the first mirror layer;
(3) manufacturing a subsequent tube core: the method comprises the following steps:
regrowing the first reflector layer on the current blocking layer, and bonding the permanent substrate structure and the temporary substrate structure together;
removing the GaAs temporary substrate and the buffer layer;
making an extension electrode and a P-type main electrode on the barrier layer;
fourthly, manufacturing an N-type electrode on the silicon permanent substrate;
dividing into single tube core.
2. The rework manufacturing method for bonding abnormality of red LED die of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to claim 1, wherein the step (2) comprises the steps of:
A. carrying out ultrasonic treatment on the bonding sheet prepared in the step (1);
B. b, soaking the bonding piece subjected to ultrasonic treatment in the step A in a mixed solution of hydrochloric acid and hydrogen peroxide until a large number of bubbles emerge at the bonding position of the permanent substrate structure and the temporary substrate structure of the bonding piece;
C. a blade is used to separate the bonded permanent substrate structure from the temporary substrate structure.
3. The rework manufacturing method for bonding abnormity of red light LED tube core of reversed polarity GaAs-based AlGaInP quaternary flip-chip structure according to claim 2, wherein in the step A, the bonding sheet prepared in the step (1) is placed in an ultrasonic device for ultrasonic treatment, and the ultrasonic frequency is 90-120 KHz;
further preferably, the ultrasonic frequency is 100 KHz.
4. The rework manufacturing method for abnormal bonding of red light LED die of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to claim 2, wherein in step B, the volume ratio of hydrochloric acid to hydrogen peroxide in the mixed solution of hydrochloric acid and hydrogen peroxide is (1:0.5) - (1: 5);
further preferably, the volume ratio of the hydrochloric acid to the hydrogen peroxide is 1: 1.
5. The rework method of claim 1, wherein in step (2), the wafer is slightly etched in dilute hydrochloric acid to remove the remaining first mirror layer.
6. The rework manufacturing method for bonding abnormality of red LED die of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to claim 1, wherein in the step (1), the bonding sheet is manufactured, comprising the steps of:
1) and (3) growing an epitaxial structure: sequentially manufacturing the buffer layer, the barrier layer, the N-type GaAs layer, the N-type AlGaInP layer, the quantum well layer, the P-type AlGaInP layer and the P-type GaAs layer on the GaAs temporary substrate;
2) growing the ohmic contact layer on the epitaxial structure grown in the step 1), making a mask pattern by using photoresist, and corroding the P-type ohmic contact;
3) growing the current barrier layer on the surface of the wafer grown in the step 2), making a mask pattern by using photoresist, and etching off the current barrier layer on the P-type ohmic contact point;
4) carrying out P-surface alloying on the wafer grown in the step 3) to form good ohmic contact;
5) putting the wafer grown in the step 4) into an evaporation table for evaporating the first reflector layer;
6) manufacturing the permanent substrate structure: growing the second reflector layer on the surface of the silicon wafer by using the silicon wafer as a silicon permanent substrate, and growing a metal adhesion layer on the surface of the second reflector layer;
7) pasting the front surfaces of the permanent substrate structure and the temporary substrate structure together; after the chip mounting is finished, placing the chip into an oven for high-temperature baking, and bonding the permanent substrate structure and the temporary substrate structure together;
further preferably, in the step 7), the temperature of the high-temperature bonding is 200-.
7. The rework method of claim 1, wherein the buffer layer is made of GaInP; the first reflecting mirror layer and the second reflecting mirror layer are made of one or a combination of more of Ti, Pt, Au, Ni, Ag and AuBe; the metal adhesion layer is made of one or a combination of more of Sn, In, Au and Ag.
8. The rework manufacturing method for bonding abnormality of red LED die of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to claim 6, wherein in step 4), the conditions of P-plane alloy are: the temperature is 480-600 ℃ and the time is 15s-5 min.
9. The reworking manufacturing method for the abnormal bonding of the red LED tube core of the reversed-polarity GaAs-based AlGaInP quaternary flip-chip structure is characterized in that in the step II, the GaAs temporary substrate is removed by using a mixed solution of ammonia water and hydrogen peroxide, the volume ratio of ammonia water to hydrogen peroxide is 1: 1-1: 10, and the buffer layer is removed by using strong acid;
further preferably, the buffer layer is removed using hydrochloric acid or sulfuric acid.
10. The rework manufacturing method for red light LED die bonding abnormality of reverse polarity GaAs-based AlGaInP quaternary flip-chip structure according to any one of claims 1 to 9, wherein in step three, a finger pattern is etched on the barrier layer, an extension electrode is manufactured on the finger pattern, and a region outside the finger pattern is roughened and grooved; making an electrode mask pattern by using photoresist, evaporating a P-type main electrode, and making the P-type main electrode by using a stripping method;
and fourthly, thinning the silicon permanent substrate and manufacturing an N-surface electrode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116779745A (en) * | 2023-08-22 | 2023-09-19 | 南昌凯捷半导体科技有限公司 | Reverse polarity LED chip and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| CN106098867A (en) * | 2016-07-06 | 2016-11-09 | 湘能华磊光电股份有限公司 | Improve LED chip to do over again the chip reworking method of efficiency |
| CN106098876A (en) * | 2016-08-24 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode and manufacture method thereof |
| CN106129190A (en) * | 2016-06-27 | 2016-11-16 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of LED electrode structure |
| CN110098140A (en) * | 2019-05-16 | 2019-08-06 | 芯盟科技有限公司 | Low-temperature wafer Direct Bonding board and wafer bonding method |
| CN110660886A (en) * | 2018-06-28 | 2020-01-07 | 山东浪潮华光光电子股份有限公司 | Preparation method of reversed polarity AlGaInP quaternary LED chip |
| CN110676159A (en) * | 2019-10-24 | 2020-01-10 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and device |
| CN111490136A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Reversed polarity AlGaInP red light L ED tube core structure and manufacturing method thereof |
-
2020
- 2020-09-18 CN CN202010985698.2A patent/CN114203862A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| CN106129190A (en) * | 2016-06-27 | 2016-11-16 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of LED electrode structure |
| CN106098867A (en) * | 2016-07-06 | 2016-11-09 | 湘能华磊光电股份有限公司 | Improve LED chip to do over again the chip reworking method of efficiency |
| CN106098876A (en) * | 2016-08-24 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of copper base high brightness AlGaInP light emitting diode and manufacture method thereof |
| CN110660886A (en) * | 2018-06-28 | 2020-01-07 | 山东浪潮华光光电子股份有限公司 | Preparation method of reversed polarity AlGaInP quaternary LED chip |
| CN111490136A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Reversed polarity AlGaInP red light L ED tube core structure and manufacturing method thereof |
| CN110098140A (en) * | 2019-05-16 | 2019-08-06 | 芯盟科技有限公司 | Low-temperature wafer Direct Bonding board and wafer bonding method |
| CN110676159A (en) * | 2019-10-24 | 2020-01-10 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116779745A (en) * | 2023-08-22 | 2023-09-19 | 南昌凯捷半导体科技有限公司 | Reverse polarity LED chip and manufacturing method thereof |
| CN116779745B (en) * | 2023-08-22 | 2023-11-17 | 南昌凯捷半导体科技有限公司 | Reverse polarity LED chip and manufacturing method thereof |
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