CN111200042A - Preparation method of AlGaInP quaternary LED chip - Google Patents
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- CN111200042A CN111200042A CN201811375752.0A CN201811375752A CN111200042A CN 111200042 A CN111200042 A CN 111200042A CN 201811375752 A CN201811375752 A CN 201811375752A CN 111200042 A CN111200042 A CN 111200042A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
A temporary bonding substrate is bonded through a temporary bonding material layer, a bonding layer is manufactured by end face bonding under an ohmic contact layer, a permanent substrate layer is manufactured below the bonding layer by an electron beam evaporation process, a P electrode is arranged on the P surface through a secondary bonding technology, the method replaces the substrate, the improvement of the luminous efficiency is realized, meanwhile, a traditional electrode structure of P surface light emission is obtained, and subsequent circuit management is facilitated. Meanwhile, the transparent conducting film is made of ITO (indium tin oxide), Zno (zinc oxide), SiO2 or TCF (titanium fluoride) materials, the refractive index of the transparent conducting film is favorable for reducing the critical angle of light rays in packaging materials such as silica gel and epoxy, and the power of the transparent conducting film is improved by about 20-30% compared with that of a common flip chip by matching with a reflector prepared by coarsening an N-type buffer layer.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a preparation method of an AlGaInP quaternary LED chip.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
AlGaInP material systems were originally used to fabricate visible light laser diodes and were first proposed by japanese researchers in the mid-eighties of the twentieth century. In the LED and LD devices in that period, ga0.5in0.5p matched with a GaAs substrate is generally used as an active light emitting region, and the light emitting wavelength is 650 nm, and the LED and LD devices are widely used in a quaternary laser pen, a DVD, and a player. Later, researchers found that introducing an Al component into GaInP could shorten the emission wavelength further, but if the Al content is too high, the emission efficiency of the device would be decreased sharply, because AlGaInP becomes an indirect bandgap semiconductor when the Al content in GaInP exceeds 0.53, so AlGaInP materials are generally used only to prepare LED devices with emission wavelengths above 570 nm. In 1997, AlGaInP-based LEDs of the first Multiple Quantum Well (MQW) composite bragg reflector (DBR) structure were produced in the world, and LED devices designed based on this structure still occupied a large share of the low-end market of LEDs to date.
Aluminum gallium indium phosphide (AlGaInP) based materials are rapidly being used to fabricate high power high brightness red and yellow LEDs. Although red LEDs made of AlGaInP-based materials are now commercially produced, LEDs having quaternary alloy materials as the multiple quantum well active region have extremely high internal quantum efficiency. However, the external quantum efficiency of conventional AlGaInP-LEDs is extremely low due to the limitations of the material itself and the substrate. The substrate GaAs is a light-absorbing material, so that the amount of light emitted from the active layer (MQW) toward the substrate is absorbed by the GaAs substrate in a large amount, and even though the conventional GaAs substrate is replaced by a metal omni-directional reflection (ODR) technology developed in the industry, the amount of light reflected to the active layer still causes a loss of a fixed ratio.
Chinese patent document CN104518056A discloses a method for preparing an AlGaInP red LED chip with reversed polarity, which comprises the following steps: (1) bonding a wafer of the GaAs substrate light-emitting diode and a silicon wafer together; (2) corroding the GaAs substrate, rotating the wafer 180 degrees along the vertical direction, and continuously corroding; (3) after the GaAs substrate is corroded, scraping the residual metal film layer on the edge of the wafer; (4) washing the surface of the wafer; etching the barrier layer on the surface of the wafer by using a sulfuric acid solution; (5) attaching a high-temperature-resistant adhesive tape strip with the area larger than that of the overlay register mark on the register mark of the wafer; (6) then carrying out evaporation on the N-type metal electrode, and corroding the window by using a window corrosive liquid; and obtaining a clear overlay register mark pattern after the etching is finished. In the patent, the relevant size is confirmed and then the operation is performed, the possibility of unstable process is higher due to the longer manufacturing process of the reversed polarity AlGaInP quaternary LED chip, and the finally produced chip emits light from the N surface.
Chinese patent document CN104157757A discloses a solution: a quaternary light emitting diode with a transparent substrate comprises an AlGaInP-LED epitaxial wafer, wherein the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened and used as a bonding surface, a thin film is plated on the bonding surface, then the thin film is bonded with the transparent substrate, and finally the GaAs substrate is removed. The film is one or the combination of more than two of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer and a magnesium chloride layer, and the transparent substrate is sapphire, aluminum nitride or glass.
Disclosure of Invention
In order to overcome the defects of the technology, the invention provides a preparation method of an AlGaInP quaternary LED chip by utilizing P-surface light emission after substrate replacement.
The technical scheme adopted by the invention for overcoming the technical problems is as follows:
a preparation method of an AlGaInP quaternary LED chip comprises the following steps:
a) preparing an epitaxial wafer structure of the LED, wherein the epitaxial wafer structure comprises a gallium arsenide substrate, an N-type buffer layer, an N-type AlGaInP layer, an MQW layer and a P-type layer from bottom to top respectively;
b) coarsening the upper surface of the P-type layer by using a corrosive liquid or dry etching process;
c) growing a layer of SiO2 on the P-type layer, and etching N strip-shaped current blocking layers on the SiO2 layer at uniform intervals by utilizing a photoetching process, wherein N is a positive integer greater than or equal to 2;
d) preparing a layer of transparent conductive film on the P-type layer, wherein the transparent conductive film is used as a current expansion layer and is made of ITO (indium tin oxide) or Zno or SiO2 or TCF (thyristor controlled film) materials;
e) bonding silica gel materials on the current expansion layer and each current barrier layer to form a temporary bonding material layer, and forming a temporary bonding substrate made of sapphire or silicon wafers or metal materials on the temporary bonding material layer;
f) corroding the gallium arsenide substrate to the N-type buffer layer by using a corrosion solution;
g) coarsening the lower surface of the N-type buffer layer by using a corrosive liquid or dry etching process;
h) growing a layer of SiO2 on the surface of the N-type buffer layer by using an electron beam or PECVD process, coating photoresist on the grown SiO2, carrying out planarization operation on the upper surface of SiO2 by using a photoetching process, wherein the surface roughness of the planarized SiO2 is not more than 500 angstroms, and an ohmic contact layer made of Ni and/or Ge and/or Au is made on the lower end surface of the N-type buffer layer;
i) bonding the lower end face of the ohmic contact layer by using an electron beam evaporation process to prepare a bonding layer, and preparing a permanent substrate layer below the bonding layer by using the electron beam evaporation process;
j) removing the temporary bonding material layer by using a silica gel dissolving agent to strip the temporary bonding substrate from the current spreading layer;
k) manufacturing a P electrode on the current blocking layers, and cutting a cutting channel in the vertical direction at the center between every two current blocking layers, wherein the depth of the cutting channel is up to the upper surface of the permanent substrate layer;
l) grinding and thinning the permanent substrate layer to the required thickness, and manufacturing an N-surface metal layer made of Ni or Ge or Au on the lower end face of the thinned permanent substrate layer;
m) cutting the LED chips along the cutting paths by using laser cutting or a grinding wheel knife to form N independent LED chips.
Preferably, in step c), a layer of SiO2 is grown on the P-type layer by an e-beam or PECVD process, and the thickness of the grown SiO2 is 400-.
Preferably, the thickness of the current spreading layer in step d) is 300-1200 Å.
Preferably, the bonding temperature for bonding the temporary bonding material layer in the step e) is 100-200 ℃, and the bonding time is 2-4 hours.
Preferably, the etching solution in the step f) is a mixed solution of ammonia water, hydrogen peroxide and water, wherein the ammonia water: hydrogen peroxide: the volume ratio of water is 1:2: 6.
preferably, the photoresist is coated to a thickness of 5000 angstroms in step h), the grown SiO2 is 1-3 μm thick, and an ohmic contact layer is formed on the lower end surface of the N-type buffer layer by using an electron beam evaporation process or a metal material sputtering process.
Preferably, the bonding layer In the step i) is made of Au and/or In and/or Ag and/or Al materials, the bonding temperature is 200-250 ℃, the bonding time is 15-30min, and the bonding pressure during bonding is 20-50kg.cm2。
Preferably, the dissolution temperature of the silica gel dissolver in step j) is 100-150 ℃.
Preferably, the permanent substrate layer is ground and thinned in the step l) to a thickness of 100-.
Preferably, in the step b), the upper surface of the P-type layer is roughened by using an etching solution, wherein the etching solution is a mixed solution of phosphoric acid, acetic acid and bromine water, and the ratio of phosphoric acid: acetic acid: the volume ratio of bromine water is 1:5:1, the temperature during corrosion is 2-5 ℃, and the corrosion time is 5-15 min; and g), roughening the lower surface of the N-type buffer layer by using corrosive liquid or by using the corrosive liquid, wherein the corrosive liquid is a mixed liquid of phosphoric acid, hydrochloric acid and water, and the weight ratio of phosphoric acid: hydrochloric acid; and the volume ratio of water is 1:2:6, and when the N-type buffer layer is corroded, the corrosion is finished.
The invention has the beneficial effects that: the temporary bonding substrate is bonded through the temporary bonding material layer, the bonding layer is manufactured by bonding the lower end face of the ohmic contact layer, the permanent substrate layer is manufactured below the bonding layer by using an electron beam evaporation process, the P electrode is arranged on the P face through a secondary bonding technology, light is emitted from the P face, the substrate is replaced by the method, the luminous efficiency is improved, meanwhile, the traditional electrode structure for emitting light from the P face is obtained, and subsequent circuit management is facilitated. Meanwhile, the transparent conducting film is made of ITO (indium tin oxide) or Zno or SiO2 or TCF (thyristor controlled rectifier) materials, the refractive index of the transparent conducting film is favorable for reducing the critical angle of light rays in packaging materials such as silica gel and epoxy, the refractive index of the GaP/ITO combined material is favorable for reducing the critical angle of light rays in the packaging materials such as silica gel and epoxy, meanwhile, the P-type layer on the surface and the N-type buffer layer at the bottom are roughened, and the power of the prepared reflector is improved by about 20% -30% compared with that of a common flip chip by matching with the reflector prepared by roughening the N.
Drawings
FIG. 1 is a cross-sectional structural view of an individual LED chip made in accordance with the present invention;
FIG. 2 is a cross-sectional view of an epitaxial wafer according to the present invention;
FIG. 3 is a cross-sectional view of a roughened P-type layer according to the present invention;
FIG. 4 is a schematic cross-sectional view of a current blocking layer according to the present invention;
FIG. 5 is a schematic cross-sectional view of a current spreading layer according to the present invention;
FIG. 6 is a schematic cross-sectional view of a temporary bonded substrate according to the present invention;
FIG. 7 is a schematic cross-sectional view of the GaAs substrate after etching away according to the present invention;
FIG. 8 is a cross-sectional view of the roughened N-type buffer layer of the present invention;
FIG. 9 is a cross-sectional view of the ohmic contact layer formed according to the present invention
FIG. 10 is a schematic cross-sectional view of the permanent substrate layer of the present invention after it has been formed;
FIG. 11 is a schematic cross-sectional view of the temporary bonded substrate after being peeled off in accordance with the present invention;
FIG. 12 is a schematic cross-sectional view of the present invention after cutting to form a cutting line;
FIG. 13 is a cross-sectional view of an N-side metal layer according to the present invention;
in the figure, 1, an N-side metal layer 2, a permanent substrate layer 3, a bonding layer 4, an N-type AlGaInP layer 5, a P-type layer 6, a current extension layer 7, a current blocking layer 8, a P electrode 9, a gallium arsenide substrate 10, an N-type buffer layer 11, a temporary bonding material layer 12, a temporary bonding substrate 13, a MQW layer 14 and an ohmic contact layer are arranged.
Detailed Description
The present invention will be further described with reference to fig. 1 to 10.
The preparation method of the AlGaInP quaternary LED chip shown in the attached figure 1 comprises the following steps:
a) as shown in fig. 2, an epitaxial wafer structure of the LED is prepared, which includes, from bottom to top, a gallium arsenide substrate 9, an N-type buffer layer 10, an N-type AlGaInP layer 4, an MQW layer 13, and a P-type layer 5;
b) as shown in fig. 3, the upper surface of the P-type layer 5 is roughened by using a corrosive liquid or dry etching process;
c) as shown in fig. 4, a layer of SiO2 is grown on the P-type layer 5, and N strip-shaped current blocking layers 7 are etched on the SiO2 layer at regular intervals by using a photolithography process, where N is a positive integer greater than or equal to 2;
d) as shown in fig. 5, a transparent conductive film is prepared on the P-type layer 5, and the transparent conductive film is used as a current spreading layer 6, and the transparent conductive film is made of ITO, Zno, SiO2 or TCF material;
e) as shown in fig. 6, a temporary bonding material layer 11 is formed by bonding a silica gel material on the current spreading layer 6 and each current blocking layer 7, and a temporary bonding substrate 12 made of sapphire, silicon wafer or metal is formed on the temporary bonding material layer 11;
f) as shown in fig. 7, the gallium arsenide substrate 9 is etched to the N-type buffer layer 10 by using an etching solution;
g) as shown in fig. 8, the lower surface of the N-type buffer layer 10 is roughened by using a corrosive solution or a dry etching process;
h) as shown in fig. 9, a layer of SiO2 is grown on the surface of the N-type buffer layer 10 by using an electron beam or PECVD process, a photoresist is coated on the grown SiO2, the upper surface of the SiO2 is planarized by using a photolithography process, the surface roughness of the planarized SiO2 is not more than 500 angstroms, and the ohmic contact layer 14 made of Ni and/or Ge and/or Au is formed on the lower end surface of the N-type buffer layer 10;
i) as shown in fig. 10, a bonding layer 3 is bonded and formed on the lower end surface of the ohmic contact layer 14 by using an electron beam evaporation process, and a permanent substrate layer 2 is formed below the bonding layer 3 by using the electron beam evaporation process;
j) as shown in fig. 11, the temporary bonding material layer 11 is removed by using a silica gel dissolving agent, so that the temporary bonding substrate 12 is peeled off from the current spreading layer 6;
k) as shown in fig. 12, a P electrode 8 is formed on the current blocking layers 7, and a cutting channel is formed by cutting in the vertical direction at the center between every two current blocking layers 7, wherein the cutting channel is deep to the upper surface of the permanent substrate layer 2;
l) grinding and thinning the permanent substrate layer 2 to the required thickness as shown in figure 13, and manufacturing an N-surface metal layer 1 made of Ni, Ge or Au on the lower end face of the thinned permanent substrate layer 2;
m) cutting the LED chips along the cutting paths by using laser cutting or a grinding wheel knife to form N independent LED chips.
At present, the reverse polarity AlGaInP quaternary LED chip is widely applied to the field of high-power red LED display screens, substrate replacement is carried out on the reverse polarity, a GaAs substrate with large light absorption is replaced by a single crystal conductive Si substrate or a sapphire substrate, and the like, so that the light efficiency can be improved by more than 20%. According to the preparation method of the AlGaInP quaternary LED chip, the temporary bonding material layer 11 is bonded with the temporary bonding substrate 12, the lower end face of the ohmic contact layer 14 is bonded to form the bonding layer 3, the electron beam evaporation process is utilized to form the permanent substrate layer 2 below the bonding layer 3, the P electrode 8 is arranged above and light is emitted from the P surface through the secondary bonding technology, the substrate is replaced by the method, the luminous efficiency is improved, meanwhile, the traditional electrode structure for emitting light from the P surface is obtained, and subsequent circuit management is facilitated. Meanwhile, the transparent conducting film is made of ITO (indium tin oxide) or Zno or SiO2 or TCF (thyristor controlled rectifier) materials, the refractive index of the transparent conducting film is favorable for reducing the critical angle of light rays in packaging materials such as silica gel and epoxy, the refractive index of the GaP/ITO combined material is favorable for reducing the critical angle of light rays in the packaging materials such as silica gel and epoxy, meanwhile, the P-type layer 5 on the surface and the N-type buffer layer 10 at the bottom are coarsened, and the power of the prepared reflector is improved by about 20% -30% compared with that of a common flip chip by matching with the reflector which is coarsened by.
Example 1:
in step c), a layer of SiO2 is grown on the P-type layer 5 by an electron beam or PECVD process, and the thickness of the grown SiO2 is 400-.
Example 2:
step d) the thickness of the current spreading layer 6 is 300-1200 Å.
Example 3:
the bonding temperature for bonding the temporary bonding material layer 11 in the step e) is 100-200 ℃, and the bonding time is 2-4 hours.
Example 4:
the corrosive solution in the step f) is a mixed solution of ammonia water, hydrogen peroxide and water, wherein the ammonia water: hydrogen peroxide: the volume ratio of water is 1:2: 6.
example 5:
the thickness of the photoresist coated in the step h) is 5000 angstroms, the thickness of the grown SiO2 is 1-3 μm, and the ohmic contact layer 14 is prepared on the lower end surface of the N-type buffer layer 10 by using an electron beam evaporation process or a metal material sputtering process.
Example 6:
in the step i), the bonding layer 3 is made of Au and/or In and/or Ag and/or Al materials, the bonding temperature is 200-250 ℃, the bonding time is 15-30min, and the bonding pressure during bonding is 20-50kg.cm2。
Example 7:
the dissolution temperature of the silica gel dissolver in the step j) is 100-150 ℃.
Example 8:
the permanent substrate layer 2 is ground and thinned in step l) to a thickness of 100-180 μm.
Example 9:
in the step b), the upper surface of the P-type layer 5 is roughened by using a corrosive liquid, wherein the corrosive liquid is a mixed liquid of phosphoric acid, acetic acid and bromine water, and the weight ratio of phosphoric acid: acetic acid: the volume ratio of bromine water is 1:5:1, the temperature during corrosion is 2-5 ℃, and the corrosion time is 5-15 min; in the step g), the lower surface of the N-type buffer layer 10 is roughened by using a corrosive liquid, wherein the corrosive liquid is a mixed liquid of phosphoric acid, hydrochloric acid and water, and the weight ratio of phosphoric acid: hydrochloric acid: the volume ratio of water is 1:2:6, and when the N-type buffer layer 10 is corroded, the corrosion is finished.
Claims (10)
1. A preparation method of an AlGaInP quaternary LED chip is characterized by comprising the following steps:
a) preparing an epitaxial wafer structure of the LED, wherein the epitaxial wafer structure comprises a gallium arsenide substrate (9), an N-type buffer layer (10), an N-type AlGaInP layer (4), an MQW layer (13) and a P-type layer (5) from bottom to top respectively;
b) coarsening the upper surface of the P-type layer (5) by using a corrosive liquid or dry etching process;
c) growing a layer of SiO2 on the P-type layer (5), and etching N strip-shaped current blocking layers (7) on the SiO2 layer at uniform intervals by utilizing a photoetching process, wherein N is a positive integer greater than or equal to 2;
d) preparing a transparent conductive film on the P-type layer (5), wherein the transparent conductive film is used as a current expansion layer (6) and is made of ITO (indium tin oxide) or Zno (zinc oxide) or SiO2 or TCF (titanium tetrachloride) materials;
e) bonding a silica gel material on the current expansion layer (6) and each current barrier layer (7) to prepare a temporary bonding material layer (11), and preparing a temporary bonding substrate (12) made of sapphire or silicon wafer or metal on the temporary bonding material layer (11);
f) corroding the gallium arsenide substrate (9) to the N-type buffer layer (10) by using a corrosion solution;
g) roughening the lower surface of the N-type buffer layer (10) by using a corrosive liquid or dry etching process;
h) growing a layer of SiO2 on the surface of the N-type buffer layer (10) by using an electron beam or PECVD process, coating photoresist on the grown SiO2, carrying out planarization operation on the upper surface of SiO2 by using a photoetching process, wherein the surface roughness of the planarized SiO2 is not more than 500 angstroms, and an ohmic contact layer (14) made of Ni and/or Ge and/or Au is manufactured on the lower end surface of the N-type buffer layer (10);
i) bonding the lower end face of the ohmic contact layer (14) by using an electron beam evaporation process to form a bonding layer (3), and forming a permanent substrate layer (2) below the bonding layer (3) by using the electron beam evaporation process;
j) removing the temporary bonding material layer (11) by using a silica gel dissolving agent to peel the temporary bonding substrate (12) from the current spreading layer (6);
k) manufacturing a P electrode (8) on the current blocking layers (7), and cutting a cutting channel in the vertical direction at the center between every two current blocking layers (7), wherein the depth of the cutting channel reaches the upper surface of the permanent substrate layer (2);
l) grinding and thinning the permanent substrate layer (2) to a required thickness, and manufacturing an N-surface metal layer (1) made of Ni or Ge or Au on the lower end face of the thinned permanent substrate layer (2);
m) cutting the LED chips along the cutting paths by using laser cutting or a grinding wheel knife to form N independent LED chips.
2. The method for fabricating the AlGaInP quaternary LED chip as claimed in claim 1, wherein a layer of SiO2 is grown on the P-type layer (5) in step c) by electron beam or PECVD process, and the thickness of the grown SiO2 is 400-1200 Å.
3. The method of claim 1, wherein the thickness of the current spreading layer (6) in step d) is 300-1200 Å.
4. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: the bonding temperature when the temporary bonding material layer (11) is prepared by bonding in the step e) is 100-200 ℃, and the bonding time is 2-4 hours.
5. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: the corrosive solution in the step f) is a mixed solution of ammonia water, hydrogen peroxide and water, wherein the ammonia water: hydrogen peroxide: the volume ratio of water is 1:2: 6.
6. the method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: the thickness of the photoresist coated in the step h) is 5000 angstroms, the thickness of the grown SiO2 is 1-3 microns, and an ohmic contact layer (14) is prepared on the lower end face of the N-type buffer layer (10) by using an electron beam evaporation process or a metal material sputtering process.
7. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: in the step i), the bonding layer (3) is made of Au and/or In and/or Ag and/or Al materials, the bonding temperature is 200-250 ℃, the bonding time is 15-30min, and the bonding pressure is 20-50kg.cm during bonding2。
8. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: the dissolution temperature of the silica gel dissolver in the step j) is 100-150 ℃.
9. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: the permanent substrate layer (2) is ground and thinned in the step l) to a thickness of 100-180 μm.
10. The method of fabricating an AlGaInP quaternary LED chip according to claim 1, wherein: in the step b), the upper surface of the P-type layer (5) is roughened by using a corrosive liquid, wherein the corrosive liquid is a mixed liquid of phosphoric acid, acetic acid and bromine water, and the weight ratio of phosphoric acid: acetic acid: the volume ratio of bromine water is 1:5:1, the temperature during corrosion is 2-5 ℃, and the corrosion time is 5-15 min; in the step g), the lower surface of the N-type buffer layer (10) is roughened by using corrosive liquid or mixed liquid of phosphoric acid, hydrochloric acid and water, wherein the weight ratio of phosphoric acid: hydrochloric acid: the volume ratio of water is 1:2:6, and when the N-type buffer layer (10) is corroded, the corrosion is finished.
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