CN114744089A - UVC LED chip and preparation method thereof - Google Patents
UVC LED chip and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
The UVC LED chip provided by the invention comprises a conductive substrate, a first bonding metal layer, a second bonding metal layer, a bonding layer, a columnar N electrode, a P/N isolation insulating layer, a P electrode metal layer, an etching barrier layer, a reflecting metal layer, a current expanding layer, an LED epitaxial layer and a columnar P electrode; the LED chip comprises a conductive substrate, a first bonding metal layer, a second bonding metal layer, a bonding layer, a columnar N electrode, a P/N isolation insulating layer, a P electrode metal layer, an etching barrier layer, a reflecting metal layer, a current expanding layer and an LED epitaxial layer which are sequentially arranged from bottom to top; the columnar N electrode sequentially penetrates through the P/N isolation insulating layer, the P electrode metal layer, the etching barrier layer, the reflecting metal layer, the current expanding layer and the LED epitaxial layer, and the bottom of the columnar N electrode is in contact with the bonding layer to form electric conduction; the columnar P electrode is positioned at the edge of the UVC LED chip and is in contact with the P electrode metal layer to form electric conduction; the P/N isolation insulating layer is positioned between the columnar N electrode and the LED epitaxial layer, the current expanding layer, the reflecting metal layer and the etching barrier layer.
Description
Technical Field
The invention relates to the technical field of LED chip manufacturing, in particular to a UVC LED chip and a preparation method thereof.
Background
Ultraviolet rays are widely used for air disinfection in the technical fields of medical treatment, hygiene, pharmacy and the like as a common physical disinfection method, and are also commonly used for disinfection treatment of drinking water, sewage and object surfaces. Most of the ultraviolet disinfection and sterilization products on the market are mostly mercury lamps, are technically mature and are cheap, so that the ultraviolet disinfection and sterilization products are popular, but have a plurality of problems: for example, the mercury lamp is easy to break, and metal mercury has great harm to human body and has certain potential safety hazard; the mercury lamp has a very wide emission spectrum, the ultraviolet spectrum section which really plays an effective curing role only accounts for one part of the emission spectrum section, and meanwhile, the photoelectric conversion efficiency is low and the energy consumption is high; the traditional mercury lamp can generate infrared rays and emit a large amount of heat, and easily causes damage to a heat-sensitive substrate and the like. The UVC LED has the advantages of being small in size, non-toxic, energy-saving, low in maintenance cost, convenient to use and the like, has a very wide application prospect, and is widely concerned by researchers.
UVC LEDs mainly include front-mount and flip-chip structures. Due to the strong absorption of the P-GaN layer in the UVC LED chip to the UVC, the light emitted from the front of the UVC LED is greatly absorbed, and the light emitting efficiency is influenced. And the inverted structure UVC LED chip emits light from the N-surface sapphire surface, so that the problem that the light emitting efficiency of the UVC LED is low due to strong absorption of P-GaN on UVC is solved. Therefore, the UVC LED generally adopts a flip-chip structure. However, since the light emitting surface of the inverted UVC LED chip is a sapphire substrate and the refractive index of the substrate is large, the light output power is reduced, and therefore, the light emitting efficiency of the inverted UVC LED chip needs to be further improved.
Disclosure of Invention
In view of the above, there is a need to provide a UVC LED chip and a method for manufacturing the UVC LED chip. The sapphire substrate and the AlN template layer are removed through laser stripping and dry etching, the exposed n-type AlGaN layer after etching is subjected to patterning treatment, the surface of a regular columnar structure is formed, and the light output power of the inverted UVC LED chip is improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a UVC LED chip, which comprises a conductive substrate, a first bonding metal layer, a second bonding metal layer, a bonding layer, a columnar N electrode, a P/N isolation insulating layer, a P electrode metal layer, an etching barrier layer, a reflecting metal layer, a current expanding layer, an LED epitaxial layer and a columnar P electrode, wherein the first bonding metal layer is arranged on the conductive substrate; the conductive substrate, the first bonding metal layer, the second bonding metal layer, the bonding layer, the columnar N electrode, the P/N isolation insulating layer, the P electrode metal layer, the etching barrier layer, the reflection metal layer, the current expanding layer and the LED epitaxial layer are sequentially arranged from bottom to top; the columnar N electrode sequentially penetrates through the P/N isolation insulating layer, the P electrode metal layer, the etching barrier layer, the reflection metal layer, the current expanding layer and the LED epitaxial layer, and the bottom of the columnar N electrode is in contact with the bonding layer to form electric conduction; the columnar P electrode is positioned at the edge of the UVC LED chip and is in contact with the P electrode metal layer to form electric conduction; the P/N isolation insulating layer is positioned between the columnar N electrode and the LED epitaxial layer, the current expanding layer, the reflecting metal layer and the etching barrier layer.
Furthermore, the LED epitaxial layer sequentially comprises a p-type GaN layer, an AlGaN electronic barrier layer, an AlGaN multi-quantum well layer and an n-type AlGaN layer from bottom to top.
Further, the current expanding layer and the P-GaN layer form ohmic contact, and the columnar N electrode and the N-type AlGaN layer form ohmic contact.
Furthermore, a passivation layer is arranged between the columnar P electrode and the LED epitaxial layer, the current expanding layer, the reflecting metal layer and the etching barrier layer.
Further, the first bonding metal layer and the second bonding metal layer are at least one of AuSn, NiSn, CuSn and AuSi, and the total thickness of the first bonding metal layer and the second bonding metal layer is 1000-9000 nm.
Furthermore, the bonding layer is in a combined layer structure of one or more of Cr, Ni, Ti, Al, Pt and Au, and the thickness of the bonding layer is 10 nm-1000 nm.
Preferably, the bonding layer is a combined layer structure containing Ti, the first layer taking Ti as the bonding layer is in contact with the P/N isolation insulating layer, and the thickness is 0.1nm-3 nm.
Preferably, the bonding layer is a combined layer structure containing Al, and Al is used as a second layer of the bonding layer and has the thickness of 200nm-500 nm.
Furthermore, the columnar N electrode is one or a combination of more of Ni, Ti, Al and Au, and the thickness is 1000nm-3000 nm.
Further, the P/N isolation insulating layer is SiO2The thickness is 800nm-1500 nm.
Furthermore, the P electrode metal layer is one or a combination of more of Ti, Al, Pt and Au, and the thickness is 500nm-2000 nm.
Furthermore, the etching barrier layer is made of metal Ni and the thickness of the etching barrier layer is 300nm-500 nm.
Further, the reflecting metal layer is Al, and the thickness of the reflecting metal layer is 200nm-600 nm.
Further, the current expanding layer is SnO2And InO2The thickness of the combination is 20nm-150 nm.
In a second aspect, the invention provides a preparation method of a UVC LED chip, comprising the following steps:
step one, preparing an LED epitaxial layer;
cleaning the LED epitaxial layer, and then preparing photoetching alignment MARK points and columnar N electrode channels;
step three, sequentially preparing a patterned current expansion layer, a reflection metal layer, an etching barrier layer and a P electrode metal layer on the LED epitaxial layer processed in the step two;
depositing a P/N isolation insulating layer;
step five, carrying out wet etching removal on the P/N isolation insulating layer at the position of the N electrode contact hole, preparing a columnar N electrode, and carrying out high-temperature annealing;
step six, preparing a bonding layer and a second metal bonding layer on the columnar N electrode in sequence;
preparing a conductive substrate, and preparing a first metal bonding layer on the conductive substrate;
step eight, aligning and bonding the first metal bonding layer and the second metal bonding layer;
step nine, grinding and thinning the bonded wafer source to obtain a sapphire substrate, stripping off the sapphire substrate by using an excimer laser, and removing the AlN template layer and part of the n-type AlGaN layer by using an inductively coupled plasma etching method;
preparing a columnar uniformly roughened light-emitting surface on the surface of the n-type AlGaN layer by adopting an inductively coupled plasma dry etching technology;
and step eleven, manufacturing an electrode pattern by using a photoetching method, and manufacturing a columnar P electrode by adopting electron beam evaporation to obtain the LED chip with the vertical structure.
Further, in the first step, the preparation method of the LED epitaxial layer comprises the step of sequentially growing an AlN template layer, an n-type AlGaN layer, an AlGaN multi-quantum well layer, an AlGaN electronic barrier layer and a p-type GaN layer on the sapphire substrate.
Further, before the electrode pattern is manufactured, a passivation layer is deposited, and then the passivation layer is subjected to wet etching.
The invention has the beneficial effects that:
the UVC LED chip adopts an inverted structure, the problem that the light emitted from the P surface of the UVC LED chip is greatly absorbed by P-GaN is solved, meanwhile, the sapphire substrate and a part of epitaxial layer are removed, the n-type AlGaN layer on the light emitting surface of the chip is subjected to graphical processing, and the light output power of the UVC LED is effectively improved.
Drawings
Fig. 1 is a cross-sectional view of a UVC LED chip prepared in example 1 of the present invention;
fig. 2 is a cross-sectional view after peeling off a sapphire substrate in embodiment 1 of the present invention;
fig. 3 is a cross-sectional view of a UVC LED chip prepared in comparative example 1;
in the figure, the solar cell comprises a 1-conductive substrate, a 2-first bonding metal layer, a 3-second bonding metal layer, a 4-bonding layer, a 5-columnar N electrode, a 6-P/N isolation insulating layer, a 7-P electrode metal layer, an 8-etching barrier layer, a 9-reflection metal layer, a 10-current expanding layer, an 11-columnar P electrode, a 12-P type GaN layer, a 13-AlGaN electron barrier layer, a 14-AlGaN multi-quantum well layer, a 15-N type AlGaN layer, a 16-AlN template layer, a 17-sapphire substrate, an 18-passivation layer and a 19-reflection metal protective layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be further clearly and completely described below with reference to the embodiments of the present invention. It should be noted that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be noted that those whose specific conditions are not specified in the examples are carried out according to the conventional conditions or the conditions recommended by the manufacturers. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The present invention will now be described in further detail with reference to the following figures and specific examples, which are intended to be illustrative, but not limiting, of the invention.
Example 1
As shown in fig. 1, a UVC LED chip includes a conductive substrate 1, a first bonding metal layer 2, a second bonding metal layer 3, an adhesive layer 4, a columnar N electrode 5, a P/N isolation insulating layer 6, a P electrode metal layer 7, an etching blocking layer 8, a reflective metal layer 9, a current spreading layer 10, an LED epitaxial layer, and a columnar P electrode 11; the LED epitaxial layer sequentially comprises a p-type GaN layer 12, an AlGaN electronic barrier layer 13, an AlGaN multi-quantum well layer 14 and an n-type AlGaN layer 15 from bottom to top;
the conductive substrate 1, the first bonding metal layer 2, the second bonding metal layer 3, the bonding layer 4, the columnar N electrode 5, the P/N isolation insulating layer 6, the P electrode metal layer 7, the etching barrier layer 8, the reflection metal layer 9, the current expanding layer 10 and the LED epitaxial layer are sequentially arranged from bottom to top;
the columnar N electrode 5 sequentially penetrates through the P/N isolation insulating layer 6, the P electrode metal layer 7, the etching barrier layer 8, the reflection metal layer 9, the current expanding layer 10 and the LED epitaxial layer, and the bottom of the columnar N electrode is in contact with the bonding layer to form electric conduction;
the P/N isolation insulating layer 6 is positioned between the columnar N electrode 5 and the LED epitaxial layer, the current expanding layer 10, the reflecting metal layer 9 and the etching barrier layer 8;
and a passivation layer 18 is arranged among the columnar P electrode 11, the LED epitaxial layer, the current expanding layer 10, the reflecting metal layer 9 and the etching barrier layer 8.
Wherein, the conductive substrate 1 is a Si substrate with the thickness of 500 μm; the first bonding metal layer 2 and the second bonding metal layer 3 are both Cr, Al, Ti, Pt, Ni and Au composite metal layers, and the first bonding metal layerThe total thickness of the metal layer 2 and the second bonding metal layer 3 is 2000 nm; the bonding layer 4 is of a Cr, Ti, Al, Ti and Au composite metal structure, and the thickness is 800 nm; the columnar N electrode 5 is an Al, Ti, Ni and Au composite metal electrode and has the thickness of 3.3 mu m; the P/N isolation insulating layer 6 is SiO2An insulating layer having a thickness of 1.2 μm; the P electrode metal layer 7 is a composite electrode consisting of a Cr electrode, a Pt electrode and an Au electrode, and the thickness is 1000 nm; the etching barrier layer 8 is Ni and has the thickness of 40 nm; the reflecting metal layer 9 is Al and has the thickness of 30 nm; the current expanding layer 10 is SnO2And InO2A composite structure with a thickness of 20 nm; the thickness of the p-type GaN layer 12 in the LED epitaxial layer is 200 nm; the AlGaN electron blocking layer 13 is 20nm thick; the AlGaN multi-quantum well layer is 0.7 mu m in thickness; the thickness of the n-type AlGaN layer 15 is 3 μm; the columnar P electrode 11 is a composite metal electrode of Al, Ti, Cr, Pt and Au, and the thickness is 4 mu m; the passivation layer 18 is SiO2And the insulating layer has a thickness of 0.6 μm.
The preparation method of the UVC LED chip comprises the following steps:
step one, preparing an LED epitaxial layer: an AlN template layer 16, an n-type AlGaN layer 15, an AlGaN multi-quantum well layer 14, an AlGaN electron barrier layer 13 and a p-type GaN layer 12 are sequentially grown on a sapphire substrate 17; the thickness of the Al template layer 16 is 1 mu m;
and step two, cleaning the LED epitaxial layer, and preparing photoetching alignment MARK points and columnar N electrode channels with the etching depth of 1.1 mu m.
Preferably, the cleaning method is that the LED epitaxial layer is cleaned by aqua regia for 20min, then is put into an organic cleaning tank containing acetone and isopropyl acetone for 5min respectively, then is put into a deionized water cleaning tank for ultrasonic cleaning for 10min, then is put into an acid cleaning tank, and is cleaned in SPM (H-SPM)2SO4、H2O2And H2Mixed liquor of O) for 10min, and then put into a deionized water cleaning tank for ultrasonic cleaning for 10 min.
Thirdly, depositing a current expanding layer 10 on the LED epitaxial layer processed in the second step by utilizing magnetron sputtering, carrying out fast annealing at 900 ℃, and then carrying out photoetching and wet etching to pattern the current expanding layer; preparing a reflecting metal layer 9, an etching barrier layer 8 and a P electrode metal layer 7 in sequence by using electron beam evaporation or sputtering deposition and adopting a photoetching and wet etching method;
depositing a P/N isolation insulating layer 6 by using a plasma-assisted chemical vapor deposition method;
removing the P/N isolation insulating layer at the bottom of the columnar N electrode channel by wet etching, depositing a columnar N electrode 5 in the columnar N electrode channel by using an electron beam evaporation method, and then annealing at 850 ℃;
step six, preparing a bonding layer 4 and a second metal bonding layer 3 on the surface of the columnar N electrode 5 in sequence in an electron beam evaporation mode;
preparing a conductive substrate 1, and preparing a first metal bonding layer 2 on the conductive substrate 1;
step eight, aligning and bonding the first metal bonding layer 2 and the second metal bonding layer 3;
step nine, grinding and thinning the sapphire substrate 17 of the bonded wafer source, stripping off the sapphire substrate 17 by using an excimer laser, and removing the AlN template layer 16 and part of the n-type AlGaN layer by adopting an inductively coupled plasma etching method;
preparing a columnar uniformly roughened light-emitting surface on the surface of the n-type AlGaN layer by adopting an inductively coupled plasma dry etching technology;
step eleven, depositing a passivation layer 18; and (3) manufacturing an electrode pattern by using a photoetching method, corroding a passivation layer by using a wet method, and manufacturing a columnar P electrode by adopting electron beam evaporation to obtain the LED chip with the vertical structure.
In the UVC LED lamp bead packaged by the chip with the size of 20mil prepared in the embodiment, the light output power can reach 19.8mW under the test current of 100 mA.
Comparative example 1
The structure of a prior art inverted UVC LED chip is shown in fig. 3. The UVC LED chip comprises a 5-columnar N electrode, a 19-reflection metal protection layer, a 9-reflection metal layer, a 10-current expansion layer, an 11-columnar P electrode, a 12-P type GaN layer, a 13-AlGaN electron blocking layer, a 14-AlGaN multi-quantum well layer, a 15-N type AlGaN layer, a 16-AlN template layer, a 17-sapphire substrate and an 18-passivation layer.
The preparation method of the flip UVC LED chip comprises the following steps:
preparing an epitaxial layer, and growing an AlN template layer 16, an n-type AlGaN layer 15, an AlGaN multi-quantum well layer 14, an AlGaN electron barrier layer 13 and a P-type GaN layer 12 on a sapphire substrate 17 in sequence by using MOCVD equipment;
step two, photoetching and etching an n-type AlGaN layer and photoetching alignment MARK points on the epitaxial wafer obtained in the step one by utilizing ICP (inductively coupled plasma);
depositing a current expanding layer 10 on the epitaxial wafer obtained in the step two by using a magnetron sputtering method, carrying out high-temperature rapid annealing, and then preparing a graphical current expanding layer by photoetching and wet etching;
and step four, depositing a reflection metal layer on the surface of the epitaxial wafer obtained in the step three by using an electron beam evaporation or magnetron sputtering method, and preparing a patterned reflection metal layer 9 by photoetching and wet etching.
And step five, preparing the patterned reflective metal protective layer 19 on the surface of the epitaxial wafer obtained in the step four in a photoetching, evaporation and gold stripping and photoresist removing mode.
And step six, depositing a passivation layer 18 on the surface of the epitaxial wafer obtained in the step five, and then preparing a columnar P electrode 11 and a columnar N electrode 5 in a photoetching, wet etching, evaporation and gold stripping and glue removing mode to obtain the inverted UVC LED chip.
Comparative example 1 the UVC LED lamp bead packaged by the 20mil chip prepared by the method has the luminous power of 16mW at 100 mA.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A UVC LED chip is characterized by comprising a conductive substrate, a first bonding metal layer, a second bonding metal layer, a bonding layer, a columnar N electrode, a P/N isolation insulating layer, a P electrode metal layer, an etching barrier layer, a reflecting metal layer, a current expansion layer, an LED epitaxial layer and a columnar P electrode; the conductive substrate, the first bonding metal layer, the second bonding metal layer, the bonding layer, the columnar N electrode, the P/N isolation insulating layer, the P electrode metal layer, the etching barrier layer, the reflection metal layer, the current expanding layer and the LED epitaxial layer are sequentially arranged from bottom to top; the columnar N electrode sequentially penetrates through the P/N isolation insulating layer, the P electrode metal layer, the etching barrier layer, the reflection metal layer, the current expanding layer and the LED epitaxial layer, and the bottom of the columnar N electrode is in contact with the bonding layer to form electric conduction; the columnar P electrode is positioned at the edge of the UVC LED chip and is in contact with the P electrode metal layer to form electric conduction; the P/N isolation insulating layer is positioned between the columnar N electrode and the LED epitaxial layer, the current expanding layer, the reflecting metal layer and the etching barrier layer.
2. The UVC LED chip of claim 1, wherein the LED epitaxial layers comprise a p-type GaN layer, an AlGaN electron blocking layer, an AlGaN multi-quantum well layer and an n-type AlGaN layer from bottom to top in sequence.
3. The UVC LED chip of claim 1, wherein the current spreading layer forms an ohmic contact with the P-GaN layer and the columnar N-electrode forms an ohmic contact with the N-type AlGaN layer.
4. The UVC LED chip of claim 1, wherein a passivation layer is disposed between the columnar P electrode and the LED epitaxial layer, the current spreading layer, the reflective metal layer and the etching barrier layer.
5. The UVC LED chip of claim 1, wherein said first and second bonding metal layers are at least one of AuSn, NiSn, CuSn and AuSi, and the total thickness of the first and second bonding metal layers is 1000-9000 nm.
6. The UVC LED chip of claim 1, wherein the bonding layer is a combined layer structure of one or more of Cr, Ni, Ti, Al, Pt and Au, and the thickness of the bonding layer is 10 nm-1000 nm.
7. The UVC LED chip of claim 1, wherein said columnar N electrode is one or a combination of Ni, Ti, Al, Au, and has a thickness of 1000nm-3000 nm; the P electrode metal layer is one or a combination of more of Ti, Al, Pt and Au, and the thickness is 500nm-2000 nm.
8. The UVC LED chip of claim 1, wherein said etch stop layer is metallic Ni having a thickness of 300nm to 500 nm; the reflecting metal layer is Al and the thickness is 200nm-600 nm; the current expanding layer is SnO2And InO2The thickness of the combination is 20nm-150 nm.
9. The method for preparing the UVC LED chip according to any one of claims 1 to 8, which is characterized by comprising the following steps:
step one, preparing an LED epitaxial layer;
cleaning the LED epitaxial layer, and then preparing photoetching alignment MARK points and columnar N electrode channels;
step three, sequentially preparing a patterned current expansion layer, a reflection metal layer, an etching barrier layer and a P electrode metal layer on the LED epitaxial layer processed in the step two;
depositing a P/N isolation insulating layer;
step five, removing the P/N isolation insulating layer at the position of the N electrode contact hole by wet etching, preparing a columnar N electrode, and carrying out high-temperature annealing;
step six, preparing a bonding layer and a second metal bonding layer on the columnar N electrode in sequence;
preparing a conductive substrate, and preparing a first metal bonding layer on the conductive substrate;
step eight, aligning and bonding the first metal bonding layer and the second metal bonding layer;
step nine, grinding and thinning the bonded wafer source to obtain a sapphire substrate, stripping off the sapphire substrate by using an excimer laser, and removing the AlN template layer and part of the n-type AlGaN layer by using an inductively coupled plasma etching method;
preparing a columnar uniformly roughened light-emitting surface on the surface of the n-type AlGaN layer by adopting an inductively coupled plasma dry etching technology;
and step eleven, manufacturing an electrode pattern by using a photoetching method, and manufacturing a columnar P electrode by using electron beam evaporation to obtain the LED chip with the vertical structure.
10. The method for preparing a UVC LED chip of claim 9, wherein the LED epitaxial layer in the first step is prepared by sequentially growing an AlN template layer, an n-type AlGaN layer, an AlGaN multi-quantum well layer, an AlGaN electron blocking layer, and a p-type GaN layer on a sapphire substrate.
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| CN117810318A (en) * | 2024-02-29 | 2024-04-02 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
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| CN117810318A (en) * | 2024-02-29 | 2024-04-02 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
| CN117810318B (en) * | 2024-02-29 | 2024-05-07 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
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