CN103441212A - LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure - Google Patents
LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure Download PDFInfo
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- CN103441212A CN103441212A CN2013104208610A CN201310420861A CN103441212A CN 103441212 A CN103441212 A CN 103441212A CN 2013104208610 A CN2013104208610 A CN 2013104208610A CN 201310420861 A CN201310420861 A CN 201310420861A CN 103441212 A CN103441212 A CN 103441212A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The invention relates to an LED (Light Emitting Diode) chip manufacturing technology, an LED chip structure and an LED chip packaging structure. According to the manufacturing technology, wolfram-molybdenum-copper alloy (WMoCu) is used as a substrate. The wolfram-molybdenum-copper alloy substrate is a good choice for a high-power LED chip heat dissipation substrate as the wolfram-molybdenum-copper alloy substrate has the thermal conductivity second only to that of a silicon carbide substrate, the cost of the wolfram-molybdenum-copper alloy substrate is far lower than that of the silicon carbide substrate, and meanwhile the wolfram-molybdenum-copper alloy substrate has the advantages of high temperature resistance, low expansion factor, high specific heat capacity, good mechanical machining property, easiness in manufacturing of mirror surfaces and the like. An LED chip in the invention sequentially comprises a wolfram-molybdenum-copper substrate layer, a U-GaN buffer layer and a N-type GaN layer from bottom to top, wherein an InGaN/GaN multiple-quantum well luminous layer and an N-electrode are arranged on the surface of the N-type GaN layer, and a P-type AlGaN layer, a P-type GaN layer, a current expanding layer and a P-electrode are also sequentially arranged above the InGaN/GaN multiple-quantum well luminous layer. Correspondingly, the LED chip has the advantages that the currents of the LED chip are vertically distributed, the substrate has high thermal conductivity and high reliability, the back surface of the luminous layer is a metal reflecting mirror, the surface has a coarsening structure, and the extraction efficiency is high.
Description
Technical field
The invention belongs to the LED technical field, refer in particular to manufacture craft, LED chip structure and the LED encapsulating structure of LED chip.
Background technology
During LED chip is made, use sapphire to have some problems as substrate, lattice mismatch and thermal stress mismatch, this can produce a large amount of defects in epitaxial loayer, causes difficulty to follow-up device manufacturing process simultaneously.Sapphire is a kind of insulator, and the resistivity under normal temperature is greater than 1011 Ω cm, can't make in this case the device of vertical stratification; Usually only at the epitaxial loayer upper surface, make N-shaped and p-type electrode.Make two electrodes at upper surface, caused the efficient lighting area minimizing, increased photoetching and etching process during device is manufactured simultaneously, result increases stock utilization reduction, cost.Due to P type GaN doping difficulty, due to P type GaN doping difficulty, the current method for preparing the metal transparency electrode on p-type GaN that generally adopts, make current spread, to reach the purpose of uniformly light-emitting.But the metal transparency electrode generally will absorb approximately 30% ~ 40% light, stable chemical performance, the mechanical strength of GaN sill are higher simultaneously, are not easy it is carried out to etching, therefore need equipment preferably in etching process, and this will increase production cost.Sapphire hardness is very high, in nature material, its hardness is only second to diamond, but in the manufacturing process of LED device, but need it is carried out to attenuate and cutting (from 400nm, reducing to the 100nm left and right), the equipment that has added attenuate and cutting technique increases a larger investment again.Sapphire heat conductivility is not fine (at 100 ℃, being about 25W/(mK)).Therefore when using the LED device, can conduct a large amount of heats; The larger high power device to area particularly, heat conductivility is a very important Consideration.For Sapphire Substrate, the carborundum manufacturing cost is higher, realizes that its commercialization also needs to reduce corresponding cost.The current backing material for GaN base LED is many, but can only have at present two kinds for commercial substrate, i.e. sapphire and silicon carbide substrates.After adopting carborundum as substrate, really its heat radiation that can be greatly improved, but its high cost, domestic manufacturer starts to adopt silicon materials as substrate recently, performance also is better than sapphire, and unique problem is that the coefficient of expansion and the silicon of GaN differs too large and easily chaps.Other substrates such as GaN, ZnO, also in development, also has a segment distance from industrialization.
Summary of the invention
The object of the invention is to overcome the above-mentioned weak point of prior art, one of purpose is to provide a kind of manufacture craft of LED chip.
In this manufacture craft, be to adopt tungsten copper alloy (WMoCu) as substrate.
This manufacture craft is specifically: using the tungsten copper alloy as substrate layer, at the upper outside epitaxial growth AlN of tungsten brass bottom resilient coating, then the n type of growing successively GaN layer, InGaN/GaN multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN layer, then make current extending and P electrode successively on p-type GaN layer surface; Then by the thermocompression bonding method, epitaxial loayer is transferred on electrically-conductive backing plate, with the WMoCu corrosive liquid, the WMoCu substrate etching removed again and exposed N-shaped GaN layer, form again the N-shaped ohmic contact after using caustic corrosion liquid to the alligatoring of N-shaped face, so just completed the making of light emitting diode (LED) chip with vertical structure.
In this manufacture craft, adopt Thomas Swan CCS low-pressure MOCVD system, using trimethyl gallium (TMGa) is that Ga source, trimethyl aluminium (TMAI) are that Al source, trimethyl indium (TMIn) are that In source, ammonia (NH3) are that N source, silane (SiH4) and two luxuriant magnesium (CP2Mg) are used separately as N-shaped and p-type dopant.
In this manufacture craft, in described tungsten copper alloy, the percentage by weight of tungsten is 84% ~ 90%, and surplus is molybdenum, copper.
Because tungsten copper alloy substrate has the thermal conductivity that is only second to silicon carbide substrates, but cost is but far below carborundum, and that tungsten-copper alloy has is high temperature resistant, low-expansion coefficient, specific heat capacity is high, machining property good, easily make the advantages such as minute surface, is the good selection of high-power LED chip heat radiation substrate.
Two of the object of the invention is to provide a kind of tungsten copper alloy substrate LED chip structure.
Described LED chip comprises tungsten brass bottom, U-GaN resilient coating, N-type GaN layer from bottom to up successively, wherein N-type GaN layer surface is provided with InGaN/GaN multiple quantum well light emitting layer and N electrode, sets gradually again P type AlGaN layer, P type GaN layer, current extending and P electrode above InGaN/GaN multiple quantum well light emitting layer.
The LED chip electric current vertical distribution of this structure, the substrate thermal conductivity is high, and reliability is high; The luminescent layer back side is metallic mirror, and there is the alligatoring structure on surface, gets optical efficiency high.
Three of the object of the invention is to provide the encapsulating structure of a kind of tungsten copper alloy substrate LED.
This encapsulating structure comprises the LED support with reflector, in this reflector center by the bonding LED chip of bonded adhesives, the two poles of the earth of LED chip by gold thread, with the LED support electrode, be connected respectively and with the conducting of LED support pin; In LED chip surface-coated fluorescent glue; Cover the silica gel of described reflector and interior LED chip thereof, gold thread, LED support electrode in the encapsulation of the upper surface of LED support, and it is heat sink in the lower surface of LED support, tungsten copper alloy base to be set.
Wherein, described fluorescent material is for exciting YAG, silicate, many primary colours of nitrogen oxide system fluorescent material containing blue-ray LED.
The reflector cup face of described LED support is the plaited surface shape.
Described LED support is 194 alloying metal supports.
The encapsulating structure of LED of the present invention is all best for the design of getting optical efficiency, heat dispersion, increasing working current density; it is mainly manifested in: thermal resistance low (being less than 10 ℃/W); reliability is high; the stable flexible gel of the inner filling of encapsulation;-40 ℃～120 ℃ scopes, can, because of the internal stress of temperature shock generation, spun gold and support be disconnected; and preventing organic encapsulating material flavescence, lead frame can not stain because of oxidation yet; The encapsulating structure design of optimizing makes optical efficiency, external quantum efficiency excellent performance.
The accompanying drawing explanation
Fig. 1 is the schematic diagram of LED chip structure in the present invention.
Fig. 2 is LED encapsulating structure schematic diagram in the present invention.
Fig. 3 is the partial enlarged drawing at A place in Fig. 2.
Embodiment
Below in conjunction with specific embodiments and the drawings, the present invention is further described.
In LED chip manufacture craft of the present invention, be to adopt tungsten copper alloy (WMoCu) as substrate, replace sapphire commonly used and carbofrax material as substrate.In described tungsten copper alloy, the percentage by weight of tungsten is 84% ~ 90%, and surplus is molybdenum, copper.
This manufacture craft is specifically: using the tungsten copper alloy as substrate layer, at the upper outside epitaxial growth AlN of tungsten brass bottom resilient coating, then the n type of growing successively GaN layer, InGaN/GaN multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN layer, then make current extending and P electrode successively on p-type GaN layer surface; Then by the thermocompression bonding method, epitaxial loayer is transferred on electrically-conductive backing plate, with the WMoCu corrosive liquid, the WMoCu substrate etching removed again and exposed N-shaped GaN layer, form again the N-shaped ohmic contact after using caustic corrosion liquid to the alligatoring of N-shaped face, so just completed the making of light emitting diode (LED) chip with vertical structure.
In this manufacture craft, adopt Thomas Swan CCS low-pressure MOCVD system, using trimethyl gallium (TMGa) is that Ga source, trimethyl aluminium (TMAI) are that Al source, trimethyl indium (TMIn) are that In source, ammonia (NH3) are that N source, silane (SiH4) and two luxuriant magnesium (CP2Mg) are used separately as N-shaped and p-type dopant.
Because tungsten copper alloy substrate has the thermal conductivity that is only second to silicon carbide substrates, but cost is but far below carborundum, and that tungsten-copper alloy has is high temperature resistant, low-expansion coefficient, specific heat capacity is high, machining property good, easily make the advantages such as minute surface, is the good selection of high-power LED chip heat radiation substrate.
Make GaN light-emitting diode substrate with WMoCu, the manufacturing cost of LED is reduced greatly, with sapphire, with silicon carbide substrates, compare, at the WMoCu Grown, GaN is more simple, and due to the heat between the two and Lattice Matching good, the difference of thermal expansion coefficients of WMoCu and GaN also makes the GaN film not be prone to be full of cracks, and lattice constant shows well in the GaN epitaxial loayer.
When adopting above-mentioned LED chip manufacture craft, present tungsten copper alloy substrate LED chip intermediate structure as shown in Figure 1, it comprises tungsten brass bottom 1, U-GaN resilient coating 2, N-type GaN layer 3 from bottom to up successively, wherein N-type GaN layer 3 surface are provided with InGaN/GaN multiple quantum well light emitting layer 4 and N electrode 5, set gradually again P type AlGaN layer 6, P type GaN layer 7, current extending 8 and P electrode 9 above InGaN/GaN multiple quantum well light emitting layer 4.Current extending 8 is the ITO(tin indium oxide) or the Ni/Au material.
This structure chip current vertical distribution, the substrate thermal conductivity is high, and reliability is high; The luminescent layer back side is metallic mirror, and there is the alligatoring structure on surface, gets optical efficiency high.
In a word, adopt manufacture craft and the corresponding LED chip structure thereof of LED chip of the present invention, there is following good effect:
(1) improve WMoCu and GaN heat and lattice between the two, solved the be full of cracks problem of GaN single crystal film, can obtain the flawless GaN epitaxial film that thickness is greater than 4 μ m.
(2), by introducing AlN, the AlGaN multi-buffering-layer, alleviated the stress of extension GaN material on the WMoCu substrate greatly, improved crystal mass, thereby improved luminous efficiency.
(3), by the interface growth condition between WMoCu concentration structure in optimal design n-GaN layer and quantum well/base, reduced the reverse leakage current of chip and improved the antistatic property of chip.
(4) by regulating p-type layer magnesium density structure, reduced the operating voltage of LED device; By optimizing the thickness of p-type GaN, improved the optical efficiency of getting of chip.
(5) by optimizing epitaxial layer structure and dopant profiles, reduce series resistance, reduce operating voltage, reduce hot generation rate, promoted the operating efficiency of LED and improved the reliability of device.
(6) adopt multi-layer metal structure, take into account ohmic contact, reflective characteristic, adhesion properties and reliability simultaneously, optimize solder technology, solved silver-colored speculum and p-GaN and adhered to problem not firm and that contact resistance is large.
(7) adopt multiple weld metal, optimize welding condition, make the strong bonded between GaN film and conduction WMoCu substrate, solved the crack problem produced in this process.
(8) surface coarsening combined by wet method and dry method, reduced the light loss that inner full-reflection and waveguiding effect cause, improves the external quantum efficiency of LED, device is obtained higher light extraction efficiency.
(9) solve the problem that the GaN surface coarsening degree of depth is inadequate and alligatoring is inhomogeneous, solved the metal structure that coarse surface cleans a sordid difficult problem and optimized the N electrode, on the N of alligatoring polarity n-GaN surface, obtained low-resistance and stable ohmic contact.
The encapsulating structure of tungsten copper alloy substrate LED of the present invention as shown in Figure 2 and Figure 3 again.This encapsulating structure comprises the LED support 100 with reflector 101, in these reflector 101 centers by the bonding LED chip 200 of bonded adhesives 102, the two poles of the earth of LED chip 200 by gold thread 300, with LED support electrode 103, be connected respectively and with 104 conductings of LED support pin; In LED chip 200 surface-coated fluorescent glues 400; Be packaged with the silica gel 500 that covers described reflector 100 and interior LED chip 200 thereof, gold thread 300, LED support electrode 103 in the upper surface of LED support 100, and in the lower surface of LED support 100, tungsten copper alloy base heat sink 600 be set.
Wherein, described fluorescent material excites YAG, silicate, many primary colours of nitrogen oxide system fluorescent material for containing blue-ray LED, thereby can launch Huang, green, ruddiness synthesize white light.
101 glasss of faces of the reflector of described LED support 100 are the plaited surface shape, adopt microscopic carvings seal cutting technique in the some flakeys of reflector cup face carve, make its integral body present the cornice plane effect, the reflecting effect of this plaited surface shape reflector is better, more common reflector light efficiency can improve 20%, and reduced total reflection, make device obtain high get optical efficiency and suitable optical space distribution.
Described LED support 100 is 194 alloying metal supports, the heat-conducting system of 194 alloying metal supports is higher, the metallic support of high thermal conductivity coefficient coordinates the bonded adhesives bonding chip of heat-conductivity conducting, thereby obtains the good heat radiating passage of low thermal resistance, makes product light decay≤5% (1000h).
Encapsulation adopts the support packing forms of imitative lumen, and its profile has Lang Baixing, rectangle and double airfoil type.Its manufacturing process is: use 194 higher alloying metal supports of conductive coefficient; first LED chip 200 is bonded in to reflector 101 centre bottom of LED support 100; by bonding technology, gold thread 300 is connected to LED chip 100 and LED support electrode 103 again; complete electrical connection; finally use organic encapsulating material (as silica gel) to cover LED chip 100 and gold thread 300; silica gel 500 coverages contain whole reflector 101, form packaging protection and optical channel.
The encapsulating structure of LED of the present invention is all best for the design of getting optical efficiency, heat dispersion, increasing working current density; it is mainly manifested in: thermal resistance low (being less than 10 ℃/W); reliability is high; the stable flexible gel of the inner filling of encapsulation;-40 ℃～120 ℃ scopes, can, because of the internal stress of temperature shock generation, spun gold and support be disconnected; and preventing organic encapsulating material flavescence, lead frame can not stain because of oxidation yet; The encapsulating structure design of optimizing makes optical efficiency, external quantum efficiency excellent performance.
Claims (9)
1. the manufacture craft of a LED chip, is characterized in that: in this manufacture craft, be to adopt the tungsten copper alloy as substrate.
2. the manufacture craft of LED chip according to claim 1, it is characterized in that: this manufacture craft specifically: using the tungsten copper alloy as substrate layer, at the upper outside epitaxial growth AlN of tungsten brass bottom resilient coating, then the n type of growing successively GaN layer, InGaN/GaN multiple quantum well light emitting layer, p-type AlGaN layer, p-type GaN layer, then make current extending and P electrode successively on p-type GaN layer surface; Then by the thermocompression bonding method, epitaxial loayer is transferred on electrically-conductive backing plate, with the WMoCu corrosive liquid, the WMoCu substrate etching removed again and exposed N-shaped GaN layer, form again the N-shaped ohmic contact after using caustic corrosion liquid to the alligatoring of N-shaped face, so just completed the making of light emitting diode (LED) chip with vertical structure.
3. the manufacture craft of LED chip according to claim 2, it is characterized in that: in this manufacture craft, adopt Thomas Swan CCS low-pressure MOCVD system, using trimethyl gallium (TMGa) is that Ga source, trimethyl aluminium (TMAI) are that Al source, trimethyl indium (TMIn) are that In source, ammonia (NH3) are that N source, silane (SiH4) and two luxuriant magnesium (CP2Mg) are used separately as N-shaped and p-type dopant.
4. the manufacture craft of LED chip according to claim 1 and 2, it is characterized in that: in described tungsten copper alloy, the percentage by weight of tungsten is 84%-90%, surplus is molybdenum, copper.
5. a tungsten copper alloy substrate LED chip structure, it is characterized in that: described LED chip comprises tungsten brass bottom (1), U-GaN resilient coating (2), N-type GaN layer (3) from bottom to up successively, wherein N-type GaN layer (3) surface is provided with InGaN/GaN multiple quantum well light emitting layer (4) and N electrode (5), in InGaN/GaN multiple quantum well light emitting layer (4) top, sets gradually again P type AlGaN layer (6), P type GaN layer (7), current extending (8) and P electrode (9).
6. the encapsulating structure of a tungsten copper alloy substrate LED, it is characterized in that: this encapsulating structure comprises the have reflector LED support (100) of (101), in this reflector (101) center by the bonding LED chip of bonded adhesives (102) (200), the two poles of the earth of LED chip (200) by gold thread (300), with LED support electrode (103), be connected respectively and with LED support pin (104) conducting; In LED chip (200) surface-coated fluorescent glue (400); Cover the silica gel (500) of described reflector (100) and interior LED chip (200) thereof, gold thread (300), LED support electrode (103) in the encapsulation of the upper surface of LED support (100), and in the lower surface of LED support (100), tungsten copper alloy base heat sink (600) is set.
7. the encapsulating structure of tungsten copper alloy substrate LED according to claim 6 is characterized in that: described fluorescent material is for exciting YAG, silicate, many primary colours of nitrogen oxide system fluorescent material containing blue-ray LED.
8. the encapsulating structure of tungsten copper alloy substrate LED according to claim 6 is characterized in that: reflector (101) the cup face of described LED support (100) is the plaited surface shape.
9. according to the encapsulating structure of the described tungsten copper alloy of claim 6 or 8 substrate LED, it is characterized in that: described LED support (100) is 194 alloying metal supports.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104143596A (en) * | 2014-07-03 | 2014-11-12 | 华南理工大学 | AlN thin film grown on W substrate and preparation method and application of AlN thin film |
| CN105514233A (en) * | 2015-11-30 | 2016-04-20 | 华灿光电股份有限公司 | High-luminous efficiency light emitting diode epitaxial slice and preparation method thereof |
| CN103996754B (en) * | 2014-04-24 | 2017-08-25 | 章晓霞 | A kind of GaN epitaxy piece surface coarsening technique of LED |
| CN109309149A (en) * | 2018-09-29 | 2019-02-05 | 江苏芯力特电子科技有限公司 | A kind of production method of inverted structure chip |
| CN112071966A (en) * | 2020-08-12 | 2020-12-11 | 深圳市光脉电子有限公司 | Ultraviolet LED epitaxial structure, light source device and preparation method of ultraviolet LED epitaxial structure |
| WO2023159411A1 (en) * | 2022-02-24 | 2023-08-31 | 万德辉 | Radiation-based heat dissipation device for electronic component, and preparation method therefor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103996754B (en) * | 2014-04-24 | 2017-08-25 | 章晓霞 | A kind of GaN epitaxy piece surface coarsening technique of LED |
| CN104143596A (en) * | 2014-07-03 | 2014-11-12 | 华南理工大学 | AlN thin film grown on W substrate and preparation method and application of AlN thin film |
| CN105514233A (en) * | 2015-11-30 | 2016-04-20 | 华灿光电股份有限公司 | High-luminous efficiency light emitting diode epitaxial slice and preparation method thereof |
| CN109309149A (en) * | 2018-09-29 | 2019-02-05 | 江苏芯力特电子科技有限公司 | A kind of production method of inverted structure chip |
| CN112071966A (en) * | 2020-08-12 | 2020-12-11 | 深圳市光脉电子有限公司 | Ultraviolet LED epitaxial structure, light source device and preparation method of ultraviolet LED epitaxial structure |
| WO2023159411A1 (en) * | 2022-02-24 | 2023-08-31 | 万德辉 | Radiation-based heat dissipation device for electronic component, and preparation method therefor |
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Denomination of invention: Manufacturing technology of LED chip, LED chip structure and LED packaging structure Effective date of registration: 20220317 Granted publication date: 20160817 Pledgee: Qingyuan sub branch of Ji'an rural commercial bank Co.,Ltd. Pledgor: JIANGXI TOP QUANTUM LIGHTING TECH Co.,Ltd. Registration number: Y2022980002725 |