CN109309149A - A kind of production method of inverted structure chip - Google Patents
A kind of production method of inverted structure chip Download PDFInfo
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- CN109309149A CN109309149A CN201811145973.9A CN201811145973A CN109309149A CN 109309149 A CN109309149 A CN 109309149A CN 201811145973 A CN201811145973 A CN 201811145973A CN 109309149 A CN109309149 A CN 109309149A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims abstract description 9
- 238000001459 lithography Methods 0.000 claims abstract description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 230000003628 erosive effect Effects 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910001369 Brass Inorganic materials 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010951 brass Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- -1 alum Chemical compound 0.000 claims description 2
- 229940037003 alum Drugs 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 2
- 229960000583 acetic acid Drugs 0.000 claims 1
- 239000012362 glacial acetic acid Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000034655 secondary growth Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HLXZNVUGXRDIFK-UHFFFAOYSA-N nickel titanium Chemical compound [Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni] HLXZNVUGXRDIFK-UHFFFAOYSA-N 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of production methods of inverted structure chip, using tungsten copper alloy (WMoCu) as successively epitaxial growth u-GaN layers of substrate, n-AlGaN layers, multiple quantum well layer and p-GaN layer or p-AlGaN layers；Remove the p-GaN layer or p-AlGaN layers and multiple quantum well layer and part n-AlGaN layers of partial region；N-shaped metal ohmic contact is made on n-AlGaN layer；Remove the N-shaped metal ohmic contact on n-AlGaN layer；P-type ohmic contact layer is made in p-GaN layer or p-AlGaN layer；Metal barrier is made on p-type ohmic contact layer；Make ohmic contact point, growing n-type ohmic contact layer by lithography on n-AlGaN layers；It is made by following process.The present invention replaces traditional Sapphire Substrate tungsten copper alloy, not only reduces production cost and simplifies processing technology；It is obviously improved p-type Ohmic contact and N-shaped ohmic contact characteristic, improves the face p metal ohmic contact adhesiveness, reduces chip voltage, improves chip stability, improves productivity.
Description
Technical field
The invention belongs to chip manufacturing technical fields, and in particular to a kind of production method of inverted structure chip.
Background technique
Traditional positive assembling structure LED (light emitting diode) chip, p-type GaN doping difficulty cause hole low
It down and is not easy long thick and electric current is caused to be not easy to spread, currently generally use and prepare super thin metal film or ITO on the surface p-type GaN
The method of film obtains electric current uniformly to spread.But metal film electrode layer will absorb part light and reduce light extraction efficiency, if will
Its thickness is thinned in turn again limitation current-diffusion layer and realizes uniform reliable current spread on p-type GaN layer surface.ITO is saturating
Although light rate up to 90%, for conductivity not as good as metal, the diffusion effect of electric current is also limited.And the electrode of this structure and
Lead accomplishes light-emitting surface, and when work can block some light.Therefore, this p-type contact structures constrain the work electricity of LED chip
Flow size.On the other hand, the PN junction heat of this structure is exported by Sapphire Substrate, very in view of sapphire thermal coefficient
Low, thermally conductive pathways are longer for large-sized power cake core, and the thermal resistance of this LED chip is larger, operating current also by
Limitation.
Although ultraviolet market is expected, ultraviolet LED especially wavelength is very high less than the ultraviolet LED technical threshold of 365nm.
There is absorption in light of the GaN material for wavelength less than 365nm, so being less than the ultraviolet LED of 365nm, N-shaped for wavelength
Semiconductor cannot be GaN material, generally use AlGaN material.It is (general that the Ohmic contact of n-AlGaN needs high temperature that could be formed
Annealing temperature is greater than equal to 550 DEG C).For vertical structure/inverted structure chip, the Ohmic contact in the face p generallys use Ag
Base, Al base reflective ohmic contact layer, it is more difficult formation and it is unstable.The process meeting of n-AlGaN high annealing formation Ohmic contact
The Ohmic contact in the face p is destroyed, is used in usual technique and first makes N-shaped ohmic contact layer, then make p-type ohmic contact layer to avoid
The problem of face p Ohmic contact is destroyed.But using first production N-shaped ohmic contact layer, then makes p-type ohmic contact layer and also can
Bring new problem: such as p-type Ohmic contact annealing process destroys N-shaped Ohmic contact, and makes p-type Europe using stripping means
Nurse contact layer (first makes N-shaped Ohmic contact and makes p-type Ohmic contact again, p-type ohmic contact layer can only use stripping technology system
Make) adhesion issues etc. that introduce.
Summary of the invention
The present invention provides a kind of production methods of inverted structure purple chip, solve the above problem, provide a kind of lining
Bottom is that tungsten copper alloy reduces cost and is obviously improved p-type Ohmic contact and N-shaped ohmic contact characteristic, improves the face p Ohmic contact
Metallic adhesion reduces chip voltage, improves chip stability, the production method for mentioning large-duty inverted structure chip.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that: a kind of production of inverted structure chip
Method, comprising the following steps:
S1, using tungsten copper alloy (WmoCu) as substrate layer, the epitaxial growth AlN buffer layer on tungsten brass bottom, then according to
U-GaN layers of secondary growth, n-AlGaN layers, multiple quantum well layer and p-GaN layer or p- AlGaN layer；
S2, the p-GaN layer that partial region is removed by photoetching and dry etching or p-AlGaN layers and multiple quantum well layer and portion
Divide n-AlGaN layers, exposes n-AlGaN layer surface；
S3, N-shaped metal ohmic contact, and high annealing are made in n-AlGaN layer surface by the method for removing；
N-shaped metal ohmic contact on S4, erosion removal n-AlGaN layer；
S5, one layer of p-type ohmic contact layer is made in p-GaN layer or p-AlGaN layers of surface, and move back at 400 DEG C~550 DEG C
Fiery 80s~220s, which is also mirror layer；
S6, one layer of metal barrier that can coat the p-type ohmic contact layer is made on the surface of p-type ohmic contact layer；
S7, a layer insulating is grown on metal barrier and n-AlGaN layer surface, makes n-AlGaN layers by lithography on the insulating layer
Ohmic contact part, and by the insulating layer on the erosion removal Ohmic contact part after, then on the Ohmic contact part
Growing n-type ohmic contact layer, and anneal；
S8, p-type electrode zone, and the insulating layer in the erosion removal region are first made by lithography, then thicken and p-electrode and n-electrode is made,
Redeposited one layer of insulation material layer, and second electrode distribution is done, growth substrates and u-GaN layers are finally removed, and be roughened n-AlGaN
Inverted structure LED chip is made in layer.
Preferably, in the step S3, N-shaped metal ohmic contact is one or more of titanium, aluminium, nickel, gold, alum, zirconium
Combination or their alloy.
Preferably, in the step S3, the temperature of high annealing is 550 DEG C~1000 DEG C, and annealing time is 20S~60S,
Annealing atmosphere is nitrogen.
Preferably, in the step S4, corrode the solution used as hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid, ice vinegar
The mixed liquor of one or more of acid, chloroazotic acid composition.
Preferably, in the step S5, p-type ohmic contact layer the preparation method comprises the following steps: first mixed using ethyl alcohol, hydrochloric acid, nitric acid
It closes liquid to handle p-GaN layer or p-AlGaN layers of surface, then using electron beam evaporation method in p-GaN layer or p-
The surface of AlGaN layer deposits one layer of p-type metal ohmic contact, and photoetching corrosion goes out p-type ohmic contact layer, and at 350 DEG C~550 DEG C
Lower annealing 60s~300s.
Preferably, in the step S6, metal barrier using one or more of nickel, gold, titanium, platinum, palladium, tungsten or it
Alloy be made.
Preferably, in the step S7, N-shaped ohm connect layer using one or more of nickel, gold, titanium, platinum, palladium, tungsten or
Their alloy is made.
Preferably, in the step S7, the temperature of the annealing is 25 DEG C~300 DEG C, and annealing time is 20S~180S.
Advantageous effects of the invention: the present invention replaces traditional Sapphire Substrate tungsten copper alloy, not only
It reduces production cost and simplifies processing technology；It is obviously improved p-type Ohmic contact and N-shaped ohmic contact characteristic, improves the face p ohm
Metallic adhesion is contacted, chip voltage is reduced, improves chip stability, improves productivity.
Specific embodiment
The invention will be further described below.Following embodiment is only used for clearly illustrating technical side of the invention
Case, and not intended to limit the protection scope of the present invention.
Embodiment one:
S1, using tungsten copper alloy (WmoCu) as substrate layer, the epitaxial growth AlN buffer layer on tungsten brass bottom, then according to
U-GaN layers of secondary growth, n-AlGaN layers, multiple quantum well layer and p- AlGaN layer；
S2, the p- AlGaN layer that partial region is removed by photoetching and dry etching and multiple quantum well layer and part n-AlGaN
Layer exposes n-AlGaN layer surface；
S3, N-shaped metal ohmic contact is made in n-AlGaN layer surface by the method for removing, N-shaped metal ohmic contact is titanium
Aluminium alloy, and high annealing, the temperature of high annealing are 700 DEG C, annealing time 50S, and annealing atmosphere is nitrogen；
S4, using etchant solution hydrochloric acid, nitric acid mixed liquor removal n-AlGaN layer on N-shaped metal ohmic contact；
S5, the surface of p-GaN layer is handled using ethyl alcohol, hydrochloric acid, nitric acid mixed liquor, then is existed using electron beam evaporation method
One layer of p-type ohmic contact layer is made on the surface of p-GaN layer, and the 200s that anneals at 350 DEG C, the p-type ohmic contact layer are also
Mirror layer；
S6, one layer of metal barrier that can coat the p-type ohmic contact layer, metal are made on the surface of p-type ohmic contact layer
Barrier layer is made of Nitinol；
S7, a layer insulating is grown on metal barrier and n-AlGaN layer surface, makes n-AlGaN layers by lithography on the insulating layer
Ohmic contact part, and by the insulating layer on the erosion removal Ohmic contact part after, then on the Ohmic contact part
Growing n-type ohmic contact layer, and annealing, N-shaped ohm connect layer using one or more of nickel, gold, titanium, platinum, palladium, tungsten or they
Alloy be made, the temperature of annealing is 300 DEG C, annealing time 160s；
S8, p-type electrode zone, and the insulating layer in the erosion removal region are first made by lithography, then thicken and p-electrode and n-electrode is made,
Redeposited one layer of insulation material layer, and second electrode distribution is done, growth substrates and u-GaN layers are finally removed, and be roughened n-AlGaN
Inverted structure chip is made in layer.
Embodiment two:
S1, using tungsten copper alloy as substrate layer, epitaxial growth AlN buffer layer, then successively grows on tungsten brass bottom
U-GaN layers, n-AlGaN layers, multiple quantum well layer and p-GaN layer；
S2, the p-GaN layer that partial region is removed by photoetching and dry etching and multiple quantum well layer and part n-AlGaN layers,
Expose n-AlGaN layer surface；
S3, N-shaped metal ohmic contact is made in n-AlGaN layer surface by the method for removing, N-shaped metal ohmic contact is titanium
Aluminium alloy, and high annealing, the temperature of high annealing are 650 DEG C, annealing time 45S, and annealing atmosphere is nitrogen；
S4, the N-shaped metal ohmic contact on n-AlGaN layer is removed using etchant solution sulfuric acid；
S5, the surface of p-GaN layer is handled using ethyl alcohol, hydrochloric acid, nitric acid mixed liquor, then is existed using electron beam evaporation method
One layer of p-type ohmic contact layer is made on the surface of p-GaN layer, and the 100s that anneals at 500 DEG C, the p-type ohmic contact layer are also
Mirror layer；
S6, one layer of metal barrier that can coat the p-type ohmic contact layer, metal are made on the surface of p-type ohmic contact layer
Barrier layer is made of tungsten；
S7, a layer insulating is grown on metal barrier and n-AlGaN layer surface, makes n-AlGaN layers by lithography on the insulating layer
Ohmic contact part, and by the insulating layer on the erosion removal Ohmic contact part after, then on the Ohmic contact part
Growing n-type ohmic contact layer, and annealing, N-shaped ohm connect layer using one or more of nickel, gold, titanium, platinum, palladium, tungsten or they
Alloy be made, the temperature of annealing is 260 DEG C, annealing time 120S；
S8, p-type electrode zone, and the insulating layer in the erosion removal region are first made by lithography, then thicken and p-electrode and n-electrode is made,
Redeposited one layer of insulation material layer, and second electrode distribution is done, growth substrates and u-GaN layers are finally removed, and be roughened n-AlGaN
Inverted structure chip is made in layer.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of production method of inverted structure chip, which comprises the following steps:
S1, using tungsten copper alloy as substrate layer, epitaxial growth AlN buffer layer, then successively grows on tungsten brass bottom
U-GaN layers, n-AlGaN layers, multiple quantum well layer and p-GaN layer or p- AlGaN layer；
S2, the p-GaN layer that partial region is removed by photoetching and dry etching or p-AlGaN layers and multiple quantum well layer and portion
Divide n-AlGaN layers, exposes n-AlGaN layer surface；
S3, N-shaped metal ohmic contact, and high annealing are made in n-AlGaN layer surface by the method for removing；
N-shaped metal ohmic contact on S4, erosion removal n-AlGaN layer；
S5, one layer of p-type ohmic contact layer is made in p-GaN layer or p-AlGaN layers of surface, and move back at 400 DEG C~550 DEG C
Fiery 80s~220s, which is also mirror layer；
S6, one layer of metal barrier that can coat the p-type ohmic contact layer is made on the surface of p-type ohmic contact layer；
S7, a layer insulating is grown on metal barrier and n-AlGaN layer surface, makes n-AlGaN layers by lithography on the insulating layer
Ohmic contact part, and by the insulating layer on the erosion removal Ohmic contact part after, then on the Ohmic contact part
Growing n-type ohmic contact layer, and anneal；
S8, p-type electrode zone, and the insulating layer in the erosion removal region are first made by lithography, then thicken and p-electrode and n-electrode is made,
Redeposited one layer of insulation material layer, and second electrode distribution is done, growth substrates and u-GaN layers are finally removed, and be roughened n-AlGaN
Inverted structure UV LED chip is made in layer.
2. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S3, n
Type metal ohmic contact is the combination of one or more of titanium, aluminium, nickel, gold, alum, zirconium or their alloy.
3. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S3,
The temperature of high annealing is 550 DEG C~1000 DEG C, and annealing time is 20S~60S, and annealing atmosphere is nitrogen.
4. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S4,
Corrode the solution used to mix for what one or more of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid, glacial acetic acid, chloroazotic acid formed
Close liquid.
5. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S5, p
Type ohmic contact layer the preparation method comprises the following steps: first using, ethyl alcohol, hydrochloric acid, nitric acid mixed liquor are to p-GaN layer or p-AlGaN layers of table
Face is handled, and is then deposited one layer of p-type ohm in p-GaN layer or p-AlGaN layers of surface using electron beam evaporation method and is connect
Metal is touched, photoetching corrosion goes out p-type ohmic contact layer, and the 60s~300s that anneals at 350 DEG C~550 DEG C.
6. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S6,
Metal barrier is made of one or more of nickel, gold, titanium, platinum, palladium, tungsten or their alloy.
7. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S7, n
Type ohm is connect layer and is made of one or more of nickel, gold, titanium, platinum, palladium, tungsten or their alloy.
8. a kind of production method of inverted structure chip according to claim 1, which is characterized in that in the step S7,
The temperature of the annealing is 25 DEG C~300 DEG C, and annealing time is 20S~180S.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071966A (en) * | 2020-08-12 | 2020-12-11 | 深圳市光脉电子有限公司 | Ultraviolet LED epitaxial structure, light source device and preparation method of ultraviolet LED epitaxial structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441212A (en) * | 2013-09-16 | 2013-12-11 | 江西量一光电科技有限公司 | LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure |
| CN108011002A (en) * | 2017-11-30 | 2018-05-08 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
-
2018
- 2018-09-29 CN CN201811145973.9A patent/CN109309149A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441212A (en) * | 2013-09-16 | 2013-12-11 | 江西量一光电科技有限公司 | LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure |
| CN108011002A (en) * | 2017-11-30 | 2018-05-08 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071966A (en) * | 2020-08-12 | 2020-12-11 | 深圳市光脉电子有限公司 | Ultraviolet LED epitaxial structure, light source device and preparation method of ultraviolet LED epitaxial structure |
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