CN103996754B - A kind of GaN epitaxy piece surface coarsening technique of LED - Google Patents
A kind of GaN epitaxy piece surface coarsening technique of LED Download PDFInfo
- Publication number
- CN103996754B CN103996754B CN201410168481.7A CN201410168481A CN103996754B CN 103996754 B CN103996754 B CN 103996754B CN 201410168481 A CN201410168481 A CN 201410168481A CN 103996754 B CN103996754 B CN 103996754B
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- Prior art keywords
- cleaned
- gan epitaxy
- epitaxy piece
- gan
- minutes
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- 238000000407 epitaxy Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 230000006641 stabilisation Effects 0.000 claims abstract description 4
- 238000011105 stabilization Methods 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The GaN epitaxy piece surface coarsening technique of LED a kind of, comprises the following steps:(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150 200W, and DC auto-bias is 100V, uses O2, Cl2With He sense couplings, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the roughness RMS on the GaN surfaces after etching is 0.15 0.18nm;(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 12 minutes, alcohol be cleaned by ultrasonic 23 minutes, in deionized water carry out be cleaned by ultrasonic 23 minutes;(3) GaN epitaxy piece is used into microwave heating preheating 1 minute so that temperature reaches 200 220 degrees Celsius, it would be heated to afterwards in the KOH of molten condition and be uniformly applied to GaN epitaxy piece surface, microwave heating is made into temperature stabilization at 250 degrees Celsius, persistently corroded 1.2 minutes.
Description
Technical field
The present invention relates to a kind of LED manufacturing process.
Background technology
Current LED manufacturing technology comparative maturity, injection efficiency and internal quantum efficiency are attained by higher level.
But it is due to the cirtical angle of total reflection of chip and encapsulation medium, the factor such as absorption of chip material, LED light extraction efficiency, which is recognized, to be had
Larger room for promotion.Light total reflection is generally reduced using surface texture technology.Surface texture technology has dry etching, and
Wet etching.Wherein dry etching includes reactive ion etching (RIE), high density plasma etch, electron cyclotron resonace etc.
Ion etching (ECR) inductively coupled plasma etching (ICP) etc., wet etching corrodes including NaOH solution, electrochemical corrosion etc..
The advantage of wet etching is a lot, can such as provide the corrosive effect of low damage, cheap, but limitation is also more, such as speed
Degree is slow, isotropic, and controllability is poor etc.;And dry etching such as IPC has preferable anisotropy, uniformity, controllability, more
High etch rate.
The content of the invention
One of technical problems to be solved by the invention are that there is provided one kind with reference to the advantage of dry etching and wet etching
GaN surface coarsening techniques, improve the controllability and precision of surface coarsening technique.
As the first aspect of the present invention there is provided the GaN epitaxy piece surface coarsening technique of LED a kind of, comprise the following steps:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, is made
Use O2, Cl2And HeSense coupling, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the GaN after etching
The roughness RMS on surface is 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3
Minute, carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) by GaN epitaxy piece use microwave heating preheating 1 minute cause temperature reaches 200-220 degrees Celsius, after will heat
GaN epitaxy piece surface uniformly is applied into the KOH of molten condition, microwave heating is made into temperature stabilization at 250 degrees Celsius, continued
Corrosion 1.2 minutes.
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.
Due to first having carried out dry method ICP etchings, anisotropic, controllability is good, and the surface after dry etching has had necessarily
Roughness, as long as but the short time (1.2 minutes) is that can obtain meeting the GaN that roughening is required on the basis of this rough surface
Epitaxial wafer, though the wet etching process of this short time is anisotropic, controllable difference, the precision of etching is carried significantly
It is high.
Embodiment
For a further understanding of the present invention, preferred scheme of the present invention is described in detail with reference to the present embodiment, but
It is that realization means are not to the present invention it should be appreciated that these descriptions are further to express the technical characteristic of the present invention
Claim limitation.
It is most preferred embodiment below:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, is made
Use O2, Cl2With He sense couplings, wherein O2, Cl2Flow with He be respectively 10sccm, 10sccm,
5sccm so that the roughness RMS on the GaN surfaces after etching is 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3
Minute, carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) by GaN epitaxy piece use microwave heating preheating 1 minute cause temperature reaches 200-220 degrees Celsius, after will heat
GaN epitaxy piece surface uniformly is applied into the KOH of molten condition, microwave heating is made into temperature stabilization at 250 degrees Celsius, continued
Corrosion 1.2 minutes.
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.
Claims (1)
1. the GaN epitaxy piece surface coarsening technique of LED a kind of, comprises the following steps:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, uses O2,
Cl2With He sense couplings, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the GaN surfaces after etching
Roughness RMS be 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3 minutes,
Carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) GaN epitaxy piece is used into microwave heating preheating 1 minute so that temperature reaches 200-220 degrees Celsius, after would be heated to it is molten
The KOH for melting state is uniformly applied to GaN epitaxy piece surface, and microwave heating makes temperature stabilization at 250 degrees Celsius, persistently corrodes 1.2
Minute;
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410168481.7A CN103996754B (en) | 2014-04-24 | 2014-04-24 | A kind of GaN epitaxy piece surface coarsening technique of LED |
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---|---|---|---|
CN201410168481.7A CN103996754B (en) | 2014-04-24 | 2014-04-24 | A kind of GaN epitaxy piece surface coarsening technique of LED |
Publications (2)
Publication Number | Publication Date |
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CN103996754A CN103996754A (en) | 2014-08-20 |
CN103996754B true CN103996754B (en) | 2017-08-25 |
Family
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CN201410168481.7A Expired - Fee Related CN103996754B (en) | 2014-04-24 | 2014-04-24 | A kind of GaN epitaxy piece surface coarsening technique of LED |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226977A (en) * | 2007-12-18 | 2008-07-23 | 西安电子科技大学 | Processing method of GaN basis light emitting diode surface coarsing |
CN103441212A (en) * | 2013-09-16 | 2013-12-11 | 江西量一光电科技有限公司 | LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure |
-
2014
- 2014-04-24 CN CN201410168481.7A patent/CN103996754B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226977A (en) * | 2007-12-18 | 2008-07-23 | 西安电子科技大学 | Processing method of GaN basis light emitting diode surface coarsing |
CN103441212A (en) * | 2013-09-16 | 2013-12-11 | 江西量一光电科技有限公司 | LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure |
Non-Patent Citations (1)
Title |
---|
Cl_2基气体感应耦合等离子体刻蚀GaN的工艺;刘北平等;《半导体学报》;20060708;第27卷(第07期);第1335-1336页 * |
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CN103996754A (en) | 2014-08-20 |
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