CN103996754B - A kind of GaN epitaxy piece surface coarsening technique of LED - Google Patents

A kind of GaN epitaxy piece surface coarsening technique of LED Download PDF

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Publication number
CN103996754B
CN103996754B CN201410168481.7A CN201410168481A CN103996754B CN 103996754 B CN103996754 B CN 103996754B CN 201410168481 A CN201410168481 A CN 201410168481A CN 103996754 B CN103996754 B CN 103996754B
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cleaned
gan epitaxy
epitaxy piece
gan
minutes
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CN103996754A (en
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章晓霞
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The GaN epitaxy piece surface coarsening technique of LED a kind of, comprises the following steps:(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150 200W, and DC auto-bias is 100V, uses O2, Cl2With He sense couplings, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the roughness RMS on the GaN surfaces after etching is 0.15 0.18nm;(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 12 minutes, alcohol be cleaned by ultrasonic 23 minutes, in deionized water carry out be cleaned by ultrasonic 23 minutes;(3) GaN epitaxy piece is used into microwave heating preheating 1 minute so that temperature reaches 200 220 degrees Celsius, it would be heated to afterwards in the KOH of molten condition and be uniformly applied to GaN epitaxy piece surface, microwave heating is made into temperature stabilization at 250 degrees Celsius, persistently corroded 1.2 minutes.

Description

A kind of GaN epitaxy piece surface coarsening technique of LED
Technical field
The present invention relates to a kind of LED manufacturing process.
Background technology
Current LED manufacturing technology comparative maturity, injection efficiency and internal quantum efficiency are attained by higher level. But it is due to the cirtical angle of total reflection of chip and encapsulation medium, the factor such as absorption of chip material, LED light extraction efficiency, which is recognized, to be had Larger room for promotion.Light total reflection is generally reduced using surface texture technology.Surface texture technology has dry etching, and Wet etching.Wherein dry etching includes reactive ion etching (RIE), high density plasma etch, electron cyclotron resonace etc. Ion etching (ECR) inductively coupled plasma etching (ICP) etc., wet etching corrodes including NaOH solution, electrochemical corrosion etc.. The advantage of wet etching is a lot, can such as provide the corrosive effect of low damage, cheap, but limitation is also more, such as speed Degree is slow, isotropic, and controllability is poor etc.;And dry etching such as IPC has preferable anisotropy, uniformity, controllability, more High etch rate.
The content of the invention
One of technical problems to be solved by the invention are that there is provided one kind with reference to the advantage of dry etching and wet etching GaN surface coarsening techniques, improve the controllability and precision of surface coarsening technique.
As the first aspect of the present invention there is provided the GaN epitaxy piece surface coarsening technique of LED a kind of, comprise the following steps:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, is made Use O2, Cl2And HeSense coupling, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the GaN after etching The roughness RMS on surface is 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3 Minute, carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) by GaN epitaxy piece use microwave heating preheating 1 minute cause temperature reaches 200-220 degrees Celsius, after will heat GaN epitaxy piece surface uniformly is applied into the KOH of molten condition, microwave heating is made into temperature stabilization at 250 degrees Celsius, continued Corrosion 1.2 minutes.
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.
Due to first having carried out dry method ICP etchings, anisotropic, controllability is good, and the surface after dry etching has had necessarily Roughness, as long as but the short time (1.2 minutes) is that can obtain meeting the GaN that roughening is required on the basis of this rough surface Epitaxial wafer, though the wet etching process of this short time is anisotropic, controllable difference, the precision of etching is carried significantly It is high.
Embodiment
For a further understanding of the present invention, preferred scheme of the present invention is described in detail with reference to the present embodiment, but It is that realization means are not to the present invention it should be appreciated that these descriptions are further to express the technical characteristic of the present invention Claim limitation.
It is most preferred embodiment below:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, is made Use O2, Cl2With He sense couplings, wherein O2, Cl2Flow with He be respectively 10sccm, 10sccm, 5sccm so that the roughness RMS on the GaN surfaces after etching is 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3 Minute, carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) by GaN epitaxy piece use microwave heating preheating 1 minute cause temperature reaches 200-220 degrees Celsius, after will heat GaN epitaxy piece surface uniformly is applied into the KOH of molten condition, microwave heating is made into temperature stabilization at 250 degrees Celsius, continued Corrosion 1.2 minutes.
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.

Claims (1)

1. the GaN epitaxy piece surface coarsening technique of LED a kind of, comprises the following steps:
(1) GaN epitaxy piece surface is subjected to ICP etchings, ICP power is 150-200W, and DC auto-bias is 100V, uses O2, Cl2With He sense couplings, wherein O2, Cl2Flow-rate ratio with He is 2: 2: 1 so that the GaN surfaces after etching Roughness RMS be 0.15-0.18nm;
(2) GaN epitaxy piece is cleaned:It is sequentially placed into CCl4, acetone be respectively cleaned by ultrasonic 1-2 minutes, alcohol be cleaned by ultrasonic 2-3 minutes, Carry out being cleaned by ultrasonic 2-3 minutes in deionized water;
(3) GaN epitaxy piece is used into microwave heating preheating 1 minute so that temperature reaches 200-220 degrees Celsius, after would be heated to it is molten The KOH for melting state is uniformly applied to GaN epitaxy piece surface, and microwave heating makes temperature stabilization at 250 degrees Celsius, persistently corrodes 1.2 Minute;
(4) microwave heating is removed, room temperature is naturally cooled to;
(5) KOH on GaN epitaxy piece surface is cleaned with deionized water.
CN201410168481.7A 2014-04-24 2014-04-24 A kind of GaN epitaxy piece surface coarsening technique of LED Expired - Fee Related CN103996754B (en)

Priority Applications (1)

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CN201410168481.7A CN103996754B (en) 2014-04-24 2014-04-24 A kind of GaN epitaxy piece surface coarsening technique of LED

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Application Number Priority Date Filing Date Title
CN201410168481.7A CN103996754B (en) 2014-04-24 2014-04-24 A kind of GaN epitaxy piece surface coarsening technique of LED

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CN103996754B true CN103996754B (en) 2017-08-25

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101226977A (en) * 2007-12-18 2008-07-23 西安电子科技大学 Processing method of GaN basis light emitting diode surface coarsing
CN103441212A (en) * 2013-09-16 2013-12-11 江西量一光电科技有限公司 LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101226977A (en) * 2007-12-18 2008-07-23 西安电子科技大学 Processing method of GaN basis light emitting diode surface coarsing
CN103441212A (en) * 2013-09-16 2013-12-11 江西量一光电科技有限公司 LED (Light Emitting Diode) chip manufacturing technology, LED chip structure and LED chip packaging structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Cl_2基气体感应耦合等离子体刻蚀GaN的工艺;刘北平等;《半导体学报》;20060708;第27卷(第07期);第1335-1336页 *

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