CN111971791A - 电容器及其制作方法 - Google Patents

电容器及其制作方法 Download PDF

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Publication number
CN111971791A
CN111971791A CN201980000339.2A CN201980000339A CN111971791A CN 111971791 A CN111971791 A CN 111971791A CN 201980000339 A CN201980000339 A CN 201980000339A CN 111971791 A CN111971791 A CN 111971791A
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China
Prior art keywords
electrode
conductive
substrate
trench
layer
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CN201980000339.2A
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CN111971791B (zh
Inventor
陆斌
沈健
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

一种电容器及其制作方法，该电容器(100)包括：衬底(110)；第一沟槽(10)，设置于该衬底(110)，并自衬底(110)的上表面向下进入衬底(110)；叠层结构(120)，设置在衬底(110)上方和第一沟槽(10)内，包括m层电介质层和n层导电层，该m层电介质层和该n层导电层形成导电层与电介质层彼此相邻的结构，该m层电介质层中的每层电介质层(124、125)包括至少一种相对介电常数k大于或者等于第一阈值的高k绝缘材料，该n层导电层中每层导电层(121、122、123)包括至少一种功函数大于或者等于第二阈值的高功函数导电材料，m和n为正整数；第一电极(130)电连接至该n层导电层中的所有奇数层导电层，第二电极(140)电连接至该n层导电层中的所有偶数层导电层。

Description

PCT国内申请，说明书已公开。

Claims (27)

  1. PCT国内申请，权利要求书已公开。
CN201980000339.2A 2019-03-19 电容器及其制作方法 Active CN111971791B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/078758 WO2020186460A1 (zh) 2019-03-19 2019-03-19 电容器及其制作方法

Publications (2)

Publication Number Publication Date
CN111971791A true CN111971791A (zh) 2020-11-20
CN111971791B CN111971791B (zh) 2024-05-31

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466841A (zh) * 2020-11-24 2021-03-09 复旦大学 一种内嵌电容器的tsv结构及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120044612A1 (en) * 2010-08-23 2012-02-23 Nxp B.V. Tantalum-based electrode stack
US20120080772A1 (en) * 2010-10-04 2012-04-05 Denso Corporation Semiconductor device and method of manufacturing the same
CN102456749A (zh) * 2010-10-20 2012-05-16 中芯国际集成电路制造(上海)有限公司 Mim电容结构及其制作方法
CN102569250A (zh) * 2012-01-06 2012-07-11 无锡纳能科技有限公司 高密度电容器及其电极引出方法
US20130175665A1 (en) * 2012-01-06 2013-07-11 International Business Machines Corporation Thermally stable high-k tetragonal hfo2 layer within high aspect ratio deep trenches
US20130175666A1 (en) * 2012-01-06 2013-07-11 Maxim Integrated Products, Inc. Semiconductor device having capacitor integrated therein
US20170104057A1 (en) * 2015-10-08 2017-04-13 Ipdia Capacitor 3d-cell and 3d-capacitor structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120044612A1 (en) * 2010-08-23 2012-02-23 Nxp B.V. Tantalum-based electrode stack
US20120080772A1 (en) * 2010-10-04 2012-04-05 Denso Corporation Semiconductor device and method of manufacturing the same
CN102456749A (zh) * 2010-10-20 2012-05-16 中芯国际集成电路制造(上海)有限公司 Mim电容结构及其制作方法
CN102569250A (zh) * 2012-01-06 2012-07-11 无锡纳能科技有限公司 高密度电容器及其电极引出方法
US20130175665A1 (en) * 2012-01-06 2013-07-11 International Business Machines Corporation Thermally stable high-k tetragonal hfo2 layer within high aspect ratio deep trenches
US20130175666A1 (en) * 2012-01-06 2013-07-11 Maxim Integrated Products, Inc. Semiconductor device having capacitor integrated therein
US20170104057A1 (en) * 2015-10-08 2017-04-13 Ipdia Capacitor 3d-cell and 3d-capacitor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466841A (zh) * 2020-11-24 2021-03-09 复旦大学 一种内嵌电容器的tsv结构及其制备方法
CN112466841B (zh) * 2020-11-24 2022-09-27 复旦大学 一种内嵌电容器的tsv结构及其制备方法

Also Published As

Publication number Publication date
WO2020186460A1 (zh) 2020-09-24
EP3758062A4 (en) 2021-04-21
US20210005393A1 (en) 2021-01-07
EP3758062A1 (en) 2020-12-30
US11615921B2 (en) 2023-03-28

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