CN111834278A - 光器件层的移设方法 - Google Patents

光器件层的移设方法 Download PDF

Info

Publication number
CN111834278A
CN111834278A CN202010315789.5A CN202010315789A CN111834278A CN 111834278 A CN111834278 A CN 111834278A CN 202010315789 A CN202010315789 A CN 202010315789A CN 111834278 A CN111834278 A CN 111834278A
Authority
CN
China
Prior art keywords
optical device
adhesive
device layer
layer
transfer member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010315789.5A
Other languages
English (en)
Inventor
小柳将
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN111834278A publication Critical patent/CN111834278A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)

Abstract

提供光器件层的移设方法，将光器件层移设，在进行激光剥离时，能够抑制光器件向移设部件的转移率降低。将光器件层移设的移设方法包含移设部件接合步骤、缓冲层破坏步骤、光器件层转移步骤、粘接剂去除步骤以及光器件层移设步骤。在移设部件接合步骤中，将光器件晶片和移设部件借助粘接剂而接合，在光器件晶片的被分割成芯片尺寸的光器件层与光器件层之间的间隙中填充粘接剂。在粘接剂去除步骤中，将填充至光器件层与光器件层之间的间隙中的粘接剂的至少一部分去除，以使得通过移设部件接合步骤而埋设于粘接剂层的光器件层从粘接剂层突出。

Description

光器件层的移设方法
技术领域
本发明涉及光器件层的移设方法，从光器件晶片移设光器件层。
背景技术
LED(Light Emitting Diode，发光二极管)等光器件例如是使构成pn接合的n型半导体层和p型半导体层在蓝宝石基板的正面上外延生长而形成的。已知有将这样形成的光器件层从蓝宝石基板剥离而转移至移设部件的被称为激光剥离的剥离技术(参照专利文献1和2)。近年来，被称为微LED的极小尺寸的LED的制造技术也在发展，已知有通过蚀刻将半导体层分割而制作大量LED的技术(参照专利文献3)。
专利文献1：日本特开2004-072052号公报
专利文献2：日本特开2016-021464号公报
专利文献3：日本特开2018-107421号公报
但是，在对上述的微LED进行激光剥离时，存在LED向移设部件的转移率会降低的问题。
发明内容
由此，本发明的目的在于提供光器件层的移设方法，从光器件晶片移设光器件层，在进行激光剥离时能够抑制光器件向移设部件的转移率降低。
根据本发明，提供光器件层的移设方法，将光器件晶片的光器件层移设，该光器件晶片是将被分割成芯片尺寸的多个光器件层隔着缓冲层层叠在外延基板的正面上而得的，其中，该光器件层的移设方法具有如下的步骤：移设部件接合步骤，将该光器件晶片和移设部件借助粘接剂而接合，在该光器件晶片的被分割成芯片尺寸的光器件层与光器件层之间的间隙中填充该粘接剂；缓冲层破坏步骤，在实施了该移设部件接合步骤之后，从接合有该移设部件的光器件晶片的外延基板的背面侧对缓冲层照射对于外延基板具有透过性且对于缓冲层具有吸收性的波长的脉冲激光光线，将缓冲层破坏；光器件层转移步骤，在实施了该缓冲层破坏步骤之后，将该外延基板从该光器件层剥离，将层叠在该外延基板上的光器件层转移至该移设部件；粘接剂去除步骤，在该光器件层转移步骤之后，将填充至光器件层与光器件层之间的间隙中的粘接剂的至少一部分去除，以使得通过该移设部件接合步骤而埋设于粘接剂层的该光器件层从该粘接剂层突出；以及光器件层移设步骤，在该粘接剂去除步骤之后，将从该粘接剂层突出的光器件层移设至安装基板。
根据本申请发明，在进行激光剥离时能够抑制光器件向移设部件的转移率降低。
附图说明
图1是包含本发明实施方式的移设方法的移设对象的光器件晶片的立体图。
图2是图1的光器件晶片的剖视图。
图3是示出实施方式的移设方法的流程图。
图4是示出图3的移设部件接合步骤的一个状态的剖视图。
图5是示出图3的移设部件接合步骤的图4之后的一个状态的剖视图。
图6是示出图3的缓冲层破坏步骤的一例的局部剖视侧视图。
图7是示出图3的光器件层转移步骤的一例的剖视图。
图8是示出图3的粘接剂去除步骤的一例的局部剖视侧视图。
图9是示出图3的光器件层移设步骤的一个状态的剖视图。
图10是示出图3的光器件层移设步骤的图9之后的一个状态的剖视图。
标号说明
1：光器件晶片；2：外延基板；3：正面；4：缓冲层；5：光器件层；7：光器件；8：背面；11：移设部件；12：粘接剂；100：安装基板。
具体实施方式
以下，参照附图对本发明的实施方式进行详细说明。本发明并不被以下实施方式所记载的内容限定。另外，在以下所记载的构成要素中包含本领域技术人员能够容易想到的内容、实质上相同的内容。另外，以下所记载的结构可以适当组合。另外，可以在不脱离本发明的主旨的范围内进行结构的各种省略、置换或变更。
[实施方式]
根据附图对本发明的实施方式的移设方法进行说明。图1是包含实施方式的移设方法的移设对象的光器件晶片1的立体图。图2是图1的光器件晶片1的剖视图。另外，图1和图2中，为了说明本实施方式，使光器件层5等相对于光器件晶片1比实际大而示意性示出，之后的附图也是同样的。如图2所示，光器件晶片1包含外延基板2以及隔着缓冲层4层叠在外延基板2的正面3侧的光器件层5。
在本实施方式中，外延基板2是蓝宝石基板，其具有直径为2英寸(约50mm)左右且厚度为300μm左右的圆板形状。在本实施方式中，如图2所示，光器件层5是通过外延生长法以共计6μm左右的厚度形成于外延基板2的正面3上的n型氮化镓半导体层5-1和p型氮化镓半导体层5-2，例如作为LED(Light Emitting Diode，发光二极管)使用。在实施方式中，缓冲层4是在将光器件层5层叠在外延基板2上时形成于外延基板2的正面3与光器件层5的p型氮化镓半导体层5-2之间的厚度为1μm左右的氮化镓(GaN)层。
在本实施方式中，如图1所示，光器件层5在由呈格子状交叉的多条间隔道6划分的多个区域内按照芯片尺寸分割而层叠，形成光器件7。光器件层5彼此的间隔、即光器件7彼此的间隔与间隔道6的宽度相同，在本实施方式中为5μm左右。另外，光器件层5的大小、即光器件7的大小与间隔道6彼此的间隔相同，在本实施方式中为10μm以上且20μm以下。即，在本实施方式中，光器件层5在直径为2英寸的外延基板2上形成200万个左右的作为微LED使用的光器件7。
接着，对实施方式的移设方法进行说明。图3是示出实施方式的移设方法的流程图。移设方法是将光器件晶片1的光器件层5移设的移设方法，如图3所示，该移设方法包含移设部件接合步骤ST11、缓冲层破坏步骤ST12、光器件层转移步骤ST13、粘接剂去除步骤ST14以及光器件层移设步骤ST15。
图4是示出图3的移设部件接合步骤ST11的一个状态的剖视图。图5是示出图3的移设部件接合步骤ST11的图4之后的一个状态的剖视图。如图4和图5所示，移设部件接合步骤ST11是将光器件晶片1和移设部件11借助粘接剂12而接合并在光器件晶片1的被分割成芯片尺寸的光器件层5与光器件层5之间的间隙中填充粘接剂12的步骤。
在移设部件接合步骤ST11中，具体而言，如图4所示，首先准备具有与外延基板2同样的大小的移设基板作为移设部件11，在移设部件11的一个面上涂布粘接剂12，该粘接剂12具有相当于光器件层5与光器件层5之间的间隙的间隔道6的总体积以上的体积。
另外，在本实施方式中，移设部件11将具有与外延基板2相同程度的0.3mm左右的厚度的玻璃基板用作适当的基板，但本发明不限于此，只要是能够在与包含有机化合物而构成的粘接剂12之间进行粘接的基板，则可以使用金属制的基板等其他各种材料的基板。
另外，粘接剂12将包含有机化合物而构成的粘接剂、例如在粘接带中使用的糊料用作适当的粘接剂。粘接剂12具有如下的性质：通过加热而发生软化，粘性降低，通过进一步加热或照射紫外线而发生硬化反应等化学反应，从而发生硬化而使粘性进一步降低。
在移设部件接合步骤ST11中，接着使层叠在外延基板2上的光器件层5与涂布在移设部件11上的粘接剂12对置，并使它们接近而接触。在移设部件接合步骤ST11中，进一步从作为与外延基板2的正面3相反的一侧的面的背面8侧朝向移设部件11进行按压，或从移设部件11的与涂布有粘接剂12的侧相反的一侧的面朝向外延基板2进行按压，从而如图5所示，使粘接剂12沿着光器件层5而变形从而使光器件层5完全进入至粘接剂12。这样，在移设部件接合步骤ST11中，在光器件晶片1的被分割成芯片尺寸的光器件层5与光器件层5之间的间隙中填充粘接剂12。
这里，在移设部件接合步骤ST11中，关于按压力，在不破坏光器件晶片1和移设部件11的程度上越强越好，在该情况下，通过使粘接剂12更适当地沿着光器件层5变形，能够更适当地对光器件层5与光器件层5之间的间隙进行填充。另外，在移设部件接合步骤ST11中，优选按照粘接剂12不发生硬化反应等化学反应的程度从外延基板2的背面8侧或移设部件11侧进行加热，在该情况下，粘接剂12的粘性降低，因此通过使粘接剂12更适当地沿着光器件层5变形，能够更适当地对光器件层5与光器件层5之间的间隙进行填充。
图6是示出图3的缓冲层破坏步骤ST12的一例的局部剖视侧视图。如图6所示，缓冲层破坏步骤ST12是在实施了移设部件接合步骤ST11之后从接合有移设部件11的光器件晶片1的外延基板2的背面8侧对缓冲层4照射对于外延基板2具有透过性且对于缓冲层4具有吸收性的波长的脉冲激光光线34而将缓冲层4破坏的步骤。
在缓冲层破坏步骤ST12中，具体而言，如图6所示，首先利用与未图示的真空源连接的卡盘工作台20的保持面21对通过移设部件接合步骤ST11接合的光器件晶片1与移设部件11的接合体的移设部件11侧的面进行吸引保持。
在缓冲层破坏步骤ST12中，接着通过激光光线照射单元30从卡盘工作台20所保持的光器件晶片1与移设部件11的接合体的外延基板2的背面8侧对缓冲层4照射对于外延基板2具有透过性且对于缓冲层4具有吸收性的波长的脉冲激光光线34而将缓冲层4破坏。在本实施方式中，缓冲层破坏步骤ST12对外延基板2的整个面执行脉冲激光光线34的照射，但本发明不限于此，也可以仅对外延基板2的形成有缓冲层4的位置执行脉冲激光光线34的照射。
这里，如图6所示，激光光线照射单元30通过激光光线产生单元31产生上述的规定的波长的脉冲激光光线34，通过光学反射镜32将来自激光光线产生单元31的脉冲激光光线34的朝向变更成与卡盘工作台20所保持的接合体的外延基板2的背面8垂直的方向，通过聚光透镜33对来自光学反射镜32的脉冲激光光线34进行会聚而调整脉冲激光光线34的光斑直径和散焦，从而调整缓冲层破坏步骤ST12中的脉冲激光光线34的照射条件。
在缓冲层破坏步骤ST12中，例如使用重复频率为50kHz以上且200kHz以下、平均输出为0.1W以上且2.0W以下、脉冲宽度为20ps以下的波长约257nm的紫外线激光作为脉冲激光光线34，使光斑直径为10μm以上且50μm以下，将散焦调整为约1.0mm而执行缓冲层4的破坏处理。
图7是示出图3的光器件层转移步骤ST13的一例的立体图。光器件层转移步骤ST13是在实施了缓冲层破坏步骤ST12之后将外延基板2从光器件层5剥离而将原来层叠在外延基板2上的光器件层5转移至移设部件11的步骤。
在光器件层转移步骤ST13中，具体而言，从通过缓冲层破坏步骤ST12而使缓冲层4破坏的接合体的外延基板2的背面8侧，通过配设有未图示的超声波振动单元的喇叭来赋予超声波振动，从而以已破坏的缓冲层4为起点而将外延基板2从光器件层5剥离，将光器件层5转移至移设部件11。
这样，通过实施基于缓冲层破坏步骤ST12和光器件层转移步骤ST13的所谓的激光剥离，得到使光器件层5(光器件7)埋设而转移至涂布在移设部件11的一个面上而形成的粘接剂12中的图7所示的光器件层转移基板10。
图8是示出图3的粘接剂去除步骤ST14的一例的立体图。如图8所示，粘接剂去除步骤ST14是在光器件层转移步骤ST13之后将填充于光器件层5与光器件层5之间的间隙中的粘接剂12的至少一部分去除以使得通过移设部件接合步骤ST11而埋设于作为粘接剂12的层的粘接剂层中的光器件层5从粘接剂层突出的步骤。
在粘接剂去除步骤ST14中，具体而言，首先如图6所示，利用卡盘工作台20的保持面21对通过光器件层转移步骤ST13得到的光器件层转移基板10的移设部件11侧的面进行吸引保持。在粘接剂去除步骤ST14中，接着执行对准，即进行卡盘工作台20的保持面21所保持的光器件层转移基板10与激光光线照射单元40的激光光线41的照射位置的对位。
另外，在本实施方式中，在粘接剂去除步骤ST14中使用的激光光线照射单元40和在缓冲层破坏步骤ST12中使用的激光光线照射单元30不同，但在本发明中，不限于此，可以在缓冲层破坏步骤ST12和粘接剂去除步骤ST14中使用相同的激光光线照射单元。
在粘接剂去除步骤ST14中，接着从在光器件层转移基板10的粘接剂12中转移有光器件层5(光器件7)的那一侧，避开对光器件层5(光器件7)的激光光线41照射而向光器件层5(光器件7)彼此之间的粘接剂12的至少一部分照射激光光线41，对该粘接剂12进行选择性地激光烧蚀加工而将其去除。
在粘接剂去除步骤ST14中，例如使用重复频率为100kHz以上且1000kHz以下、平均输出为0.2W以上且1.5W以下、波长约257nm以上且约515nm以下的紫外线区域至可见光区域的激光作为激光光线41，将光斑直径缩小至0.5μm以上且3μm以下，将这样的激光光线41按照100mm/s以上且600mm/s以下在粘接剂12上进行扫描，从而执行粘接剂12的去除处理。
在粘接剂去除步骤ST14中，优选使粘接剂12的去除厚度12-1为光器件层5(光器件7)的厚度的一半以上，在该情况下，在后述的光器件层移设步骤ST15中，能够从粘接剂12适当地拾取光器件层5(光器件7)。另外，在粘接剂去除步骤ST14中，优选使粘接剂12的去除厚度12-1小于到达移设部件11的深度的量，在该情况下，能够抑制利用激光光线41对移设部件11进行烧蚀加工的可能性。
另外，在粘接剂去除步骤ST14中，优选使粘接剂12的去除厚度12-1为规定的范围内，更优选使粘接剂12的去除厚度12-1恒定，在这些情况下，在后述的光器件层移设步骤ST15中，能够以规定的范围内的力稳定地从粘接剂12拾取光器件层5(光器件7)。
在本实施方式中，转移有光器件层5(光器件7)的区域为10μm以上且20μm以下的程度，粘接剂12露出的区域为与间隔道6的宽度同样的5μm左右的程度，粘接剂12的去除厚度12-1为与光器件层5(光器件7)的厚度的一半左右同样的3μm左右的程度。在粘接剂去除步骤ST14中，通过激光光线41进行激光烧蚀加工，因此能够对本实施方式那样的μm单位的程度的粘接剂12的去除区域12-2和去除厚度12-1进行控制。
在本实施方式中，转移有光器件层5(光器件7)的区域和粘接剂12露出的区域呈周期性排列。因此，在粘接剂去除步骤ST14中，优选通过一边按照所设定的周期重复进行激光光线41的打开和关闭一边进行激光烧蚀加工的所谓的Hasen Cut(注册商标)、或具有电扫描仪、共振扫描仪、声光偏转元件或多面镜等的扫描单元的激光光线41的扫描等而将粘接剂12去除。在粘接剂去除步骤ST14中，具体而言，一边重复进行打开和关闭一边照射激光光线41。例如在粘接剂12露出的区域中，以打开的形式照射激光光线41，在转移有光器件层5(光器件7)的区域中，使激光光线41关闭而通过。
图9是示出图3的光器件层移设步骤ST15的一个状态的剖视图。图10是示出图3的光器件层移设步骤ST15的图9之后的一个状态的剖视图。如图9和图10所示，光器件层移设步骤ST15是在粘接剂去除步骤ST14之后将从粘接剂层突出的光器件层5移设于安装基板100的步骤。
在光器件层移设步骤ST15中，具体而言，首先优选在利用拾取单元50的在与光器件层5(光器件7)对置的位置排列而设置的拾取部51来拾取各个光器件层5(光器件7)之前，实施使支承光器件层5(光器件7)的粘接剂12的粘接性降低的粘接性降低处理。粘接性降低处理例如是通过对粘接剂12进行加热而使粘接剂12的粘性降低的处理、或通过对粘接剂12照射紫外线或进一步进行加热而引发聚合反应等硬化反应从而使粘接剂12的粘接性降低的处理，能够利用拾取单元50以更低的力拾取光器件层5(光器件7)，提高拾取的准确率，并且降低、抑制在光器件层5(光器件7)上残留粘接剂12。
在光器件层移设步骤ST15中，接着如图9所示，利用拾取单元50的各拾取部51对各光器件层5(光器件7)进行把持或吸附保持而进行拾取。在光器件层移设步骤ST15中，然后如图10所示，使拾取单元50的各拾取部51所拾取的各光器件层5(光器件7)移动而载置于按照与光器件层5(光器件7)同样的形状、尺寸和间隔等排列而设置在安装基板100上的接合层110上。
利用光器件层移设步骤ST15移设至安装基板100的接合层110上的各光器件层5(光器件7)借助接合层110而接合安装于安装基板100。
这样，在光器件层移设步骤ST15中，在本实施方式中，利用拾取单元50的各拾取部51将从粘接剂12突出的各光器件层5(光器件7)按照整个面一次性的方式移设至安装基板100，因此能够高效地移设光器件层5(光器件7)。另外，在本发明中，不限于此，也可以利用一个拾取部51将从粘接剂12突出的各光器件层5(光器件7)一个一个地移设至安装基板100，在该情况下，能够提高各光器件层5(光器件7)的移设精度。
实施方式的将光器件晶片1的光器件层5移设的移设方法中，在移设部件接合步骤ST11中，成为在光器件晶片1的被分割成芯片尺寸的光器件层5与光器件层5之间的间隙中填充有粘接剂12的状态，将光器件晶片1和移设部件11借助粘接剂12而接合，因此起到如下的作用效果：在进行激光剥离时，能够抑制光器件7向移设部件11的(光器件层5)的转移率降低。
另外，实施方式的将光器件晶片1的光器件层5移设的移设方法中，在粘接剂去除步骤ST14中将填充至光器件层5与光器件层5之间的间隙中的粘接剂12的至少一部分去除，从而使在移设部件接合步骤ST11中埋设于粘接剂层的光器件层5从粘接剂层突出，因此起到如下的作用效果：能够抑制将光器件层5(光器件7)移设至安装基板100的移设效率和移设精度降低。
[变形例]
对本发明的实施方式的变形例的移设方法进行说明。变形例的移设方法除了粘接剂去除步骤ST14不同以外，与实施方式相同。
变形例的粘接剂去除步骤ST14代替实施方式的激光光线41的照射而利用蚀刻处理或划线加工处理将粘接剂12选择性地去除。
在变形例的粘接剂去除步骤ST14中，朝向光器件层5和粘接剂12提供例如含有通过在与粘接剂12之间发生化学反应而将粘接剂12去除且在与光器件层5之间几乎不发生显著的化学反应的液体或气体的化合物的蚀刻剂，从而通过蚀刻处理将粘接剂12选择性地去除。
另外，在变形例的粘接剂去除步骤ST14中，例如使用前端的直径与粘接剂12的露出区域和间隔道6的宽度同样或比它们小的数μm以下左右的金属制或金刚石制等工具的划线器，沿着间隔道6对粘接剂12的露出区域进行切削，从而通过划线加工处理将粘接剂12选择性地去除。
这些变形例的将光器件晶片1的光器件层5移设的移设方法起到与实施方式的将光器件晶片1的光器件层5移设的移设方法同样的作用效果。
另外，本发明并不限于上述实施方式。即，可以在不脱离本发明的主旨的范围内进行各种变形并实施。

Claims (1)

1.一种光器件层的移设方法，将光器件晶片的光器件层移设，该光器件晶片是将被分割成芯片尺寸的多个光器件层隔着缓冲层层叠在外延基板的正面上而得的，其中，
该光器件层的移设方法具有如下的步骤：
移设部件接合步骤，将该光器件晶片和移设部件借助粘接剂而接合，在该光器件晶片的被分割成芯片尺寸的光器件层与光器件层之间的间隙中填充该粘接剂；
缓冲层破坏步骤，在实施了该移设部件接合步骤之后，从接合有该移设部件的光器件晶片的外延基板的背面侧对缓冲层照射对于外延基板具有透过性且对于缓冲层具有吸收性的波长的脉冲激光光线，将缓冲层破坏；
光器件层转移步骤，在实施了该缓冲层破坏步骤之后，将该外延基板从该光器件层剥离，将层叠在该外延基板上的光器件层转移至该移设部件；
粘接剂去除步骤，在该光器件层转移步骤之后，将填充至光器件层与光器件层之间的间隙中的粘接剂的至少一部分去除，以使得通过该移设部件接合步骤而埋设于粘接剂层的该光器件层从该粘接剂层突出；以及
光器件层移设步骤，在该粘接剂去除步骤之后，将从该粘接剂层突出的光器件层移设至安装基板。
CN202010315789.5A 2019-04-23 2020-04-21 光器件层的移设方法 Pending CN111834278A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-082146 2019-04-23
JP2019082146A JP7333192B2 (ja) 2019-04-23 2019-04-23 移設方法

Publications (1)

Publication Number Publication Date
CN111834278A true CN111834278A (zh) 2020-10-27

Family

ID=72913669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010315789.5A Pending CN111834278A (zh) 2019-04-23 2020-04-21 光器件层的移设方法

Country Status (4)

Country Link
US (1) US11011670B2 (zh)
JP (1) JP7333192B2 (zh)
KR (1) KR20200124157A (zh)
CN (1) CN111834278A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112967992A (zh) * 2020-12-07 2021-06-15 重庆康佳光电技术研究院有限公司 外延结构的转移方法
US20220399298A1 (en) * 2021-06-15 2022-12-15 International Business Machines Corporation Solder transfer integrated circuit packaging

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024000569A (ja) * 2022-06-21 2024-01-09 東レエンジニアリング株式会社 保持層一部除去方法、及び保持層一部除去装置
WO2024009956A1 (ja) * 2022-07-06 2024-01-11 信越化学工業株式会社 Ｌｅｄ実装基板の製造方法、洗浄液及び洗浄方法
CN116914061B (zh) * 2023-09-12 2024-01-23 晶能光电股份有限公司 MicroLED显示组件及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3906653B2 (ja) 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
JP2003098977A (ja) 2001-09-19 2003-04-04 Sony Corp 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法
JP2004072052A (ja) 2002-08-09 2004-03-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP6349175B2 (ja) 2014-07-14 2018-06-27 株式会社ディスコ リフトオフ方法及び超音波ホーン
JP6591254B2 (ja) 2015-10-16 2019-10-16 スタンレー電気株式会社 半導体発光装置、及び、半導体発光装置の製造方法
US10325893B2 (en) 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
WO2018117361A1 (ko) 2016-12-23 2018-06-28 주식회사 루멘스 마이크로 엘이디 모듈 및 그 제조방법
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
JP6985031B2 (ja) 2017-05-19 2021-12-22 株式会社ディスコ Ｌｅｄディスプレーパネルの製造方法
TWI648871B (zh) 2017-09-22 2019-01-21 台灣愛司帝科技股份有限公司 發光模組的製作方法
JP7258414B2 (ja) * 2018-08-28 2023-04-17 株式会社ディスコ 光デバイスウェーハの加工方法
US20210005520A1 (en) * 2019-07-02 2021-01-07 Sharp Kabushiki Kaisha Method and apparatus for manufacturing array device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112967992A (zh) * 2020-12-07 2021-06-15 重庆康佳光电技术研究院有限公司 外延结构的转移方法
US20220399298A1 (en) * 2021-06-15 2022-12-15 International Business Machines Corporation Solder transfer integrated circuit packaging
US11631650B2 (en) * 2021-06-15 2023-04-18 International Business Machines Corporation Solder transfer integrated circuit packaging

Also Published As

Publication number Publication date
US20200343405A1 (en) 2020-10-29
TW202040834A (zh) 2020-11-01
JP7333192B2 (ja) 2023-08-24
US11011670B2 (en) 2021-05-18
KR20200124157A (ko) 2020-11-02
JP2020181847A (ja) 2020-11-05

Similar Documents

Publication Publication Date Title
CN111834278A (zh) 光器件层的移设方法
JP5766530B2 (ja) 光デバイスウエーハの加工方法
KR102217032B1 (ko) 리프트 오프 방법
JP6349175B2 (ja) リフトオフ方法及び超音波ホーン
JP5996250B2 (ja) リフトオフ方法
JP7258414B2 (ja) 光デバイスウェーハの加工方法
TWI785131B (zh) 剝離方法
JP7253994B2 (ja) 光デバイスの移設方法
CN106067437B (zh) 剥离方法及超声波振动角
TWI803712B (zh) 剝離方法
CN115335965A (zh) 基板处理方法和基板处理装置
TWI836061B (zh) 光學元件層之移設方法
JP7458910B2 (ja) デバイスの製造方法
CN112185877A (zh) 光器件的移设方法
JP2020191432A (ja) 移設方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination