TWI785131B - 剝離方法 - Google Patents
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Abstract
[課題]提供可以較以往更有效率性進行在厚的磊晶基板中之緩衝層的破壞工程和光裝置層之移設工程的剝離方法。 [解決手段]一種剝離方法,其係將在磊晶基板之表面隔著GaN緩衝層而疊層光裝置層之光裝置晶圓之該光裝置層,轉移至移設基板的剝離方法,包含:移設基板接合工程,其係在該光裝置晶圓之該光裝置層之表面隔著接合層而接合移設基板而形成複合基板;緩衝層破壞工程,其係從構成該複合基板之該光裝置晶圓之該磊晶基板之背面側,對該磊晶基板照射相對於該磊晶基板具有穿透性且相對於該緩衝層具有吸收性之波長的脈衝雷射光束,破壞該緩衝層;及光裝置層移設工程,其係於實施該緩衝層破壞工程之後,從該磊晶基板剝離該光裝置層而移設至該移設基板。
Description
本發明係關於將在藍寶石基板或碳化矽基板等之磊晶基板之表面隔著緩衝層而疊層光裝置層之光裝置晶圓之該光裝置層,轉移至移設基板的剝離方法。
光裝置製造製程中,在略圓板形狀的藍寶石基板或碳化矽基板等之磊晶基板之表面,隔著緩衝層而疊層以GaN(氮化鎵)等所構成之n型半導體層及p型半導體層所形成的光裝置層,且在藉由被形成格子狀之複數分割預定線(切割道)被區劃的複數區域,形成發光二極體(LED)、雷射二極體(LD)等之光裝置而製造光裝置晶圓。而且,藉由沿著分割預定線分割光裝置晶圓,製造出各個光裝置晶片(例如,參照日本特開平10-3054205號公報)。
再者,作為提升光裝置晶片之亮度的技術,在日本特開2004-720525號公報中,記載著將光裝置晶圓之光裝置層經由AuSn(金錫)等之接合層接合於Cu、Mo、Si等之移設基板,從磊晶基板之背面側穿透磊晶基板且照射在緩衝層被吸收的波長之脈衝雷射光束而破壞緩衝層,從磊晶基板剝離光裝置層,依此將光裝置層轉移至移設基板的被稱為剝離的製造方法。
在將被形成在磊晶基板上之光裝置層移設至移設基板之以往的剝離方法中,研削磊晶基板之背面而薄化至100~350μm左右之後,從磊晶基板之背面側照射脈衝雷射光束。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開平10-305420號公報 [專利文獻2]日本特開2004-720525號公報 [專利文獻3]日本特許第5345507號公報
[發明所欲解決之課題]
但是,在研削磊晶基板而使充分薄化之後照射脈衝雷射光束之方法中,當磊晶基板之尺寸增加至6吋等時,由於有需要增加研銷量的時間,或磊晶基板之翹曲變大之情形等,故有難以充分薄化這樣的課題。
再者,在從磊晶基板之背面側照射脈衝雷射光束之方法中,有無法充分破壞緩衝層之情形,有無法從磊晶基板順利地剝離光裝置層這樣的問題。
於是,在專利文獻3中提案有使產生超音波振動之超音波焊頭接觸於磊晶基板,而使磊晶基板振動,從磊晶基板剝離光裝置層之方法。但是,在該方法中,為了在破壞緩衝層之後將光裝置層移設至移設基板,需要施加作為外力的超音波。
依此,本發明之目的係提供可以較以往更有效率地進行在厚的磊晶基板中之緩衝層的破壞工程和光裝置層之移設工程的剝離方法。 [用以解決課題之手段]
當根據本發明時,提供一種剝離方法,其係將在磊晶基板之表面隔著GaN緩衝層而疊層光裝置層之光裝置晶圓之該光裝置層,轉移至移設基板的剝離方法,其特徵在於,具備:移設基板接合工程,其係在該光裝置晶圓之該光裝置層之表面隔著接合層而接合移設基板而形成複合基板;緩衝層破壞工程,其係從構成該複合基板之該光裝置晶圓之該磊晶基板之背面側,對該磊晶基板照射相對於該磊晶基板具有穿透性且相對於該緩衝層具有吸收性之波長的脈衝雷射光束,破壞該緩衝層;及光裝置層移設工程,其係於實施該緩衝層破壞工程之後,從該磊晶基板剝離該光裝置層而移設至該移設基板,該緩衝層破壞工程係藉由先實施朝該磊晶基板之中央部照射脈衝雷射光束,接著對該中央部實施照射外周部之脈衝雷射光束,依此由於構成該緩衝層的GaN分離成Ga和N2
氣體而產生的應力,與該緩衝層破壞工程結束同時被釋放之時的反作用力,從該磊晶基板剝離該光裝置層而移設至該移設基板。
以磊晶基板之厚度為0.5mm~1.5mm之範圍內為佳。 [發明效果]
當藉由本發明之剝離方法時,因將緩衝層破壞工程先實施朝磊晶基板之中央部照射脈衝雷射光束,接著朝外周部照射脈衝雷射光束,故雖然在中央部之緩衝層破壞工程中,由於構成緩衝層之GaN分離成Ga和N2
氣體而產生的應力被封閉在基板內部,但是因應力與接著實施的朝外周部的緩衝層破壞工程結束同時被釋放,故藉由其反作用力,可以從磊晶基板剝離光裝置層而移設至移設基板。
因此,即使磊晶基板仍舊較厚,亦能夠進行光裝置層之剝離加工。依此,因不需要研削磊晶基板,故能夠刪減以往必須之研削所需的成本或工時且提升生產性。
再者,因磊晶基板較厚,故由於應力之產生在加工中破裂的風險,或在加工後之搬運時破裂的風險大幅降低,且因能夠再次利用磊晶基板,故可以刪減成本。
以下,參照圖面針對本發明之實施形態予以詳細說明。當參照圖1(A)時,表示藉由根據本發明之剝離方法被轉移至移設基板的形成有光裝置層之光裝置晶圓11之斜視圖。圖1(B)係光裝置層之晶圓之一部分放大剖面圖。
圖1(A)所示之光裝置晶圓11係在直徑為50 mm且厚度為1mm之圓板形狀的作為磊晶基板之藍寶石基板13的表面,疊層氮化鎵(GaN)等之光裝置層(磊晶層)15而被構成。
如圖1(B)所示般,在藍寶石基板13之表面,形成由氮化鎵(GaN)所構成的厚度為例如1μm的緩衝層21。因該緩衝層21係以500℃左右之低溫而被製膜,故被稱為低溫緩衝層,結晶性崩壞而成為比較軟的膜。
在緩衝層21上,藉由磊晶生長疊層n型氮化鎵半導體層23及p型氮化鎵半導體層25所構成之光裝置層15。在被疊層於藍寶石基板13上之光裝置層(磊晶層)15,藉由LED(Light Emitting Diode)等之複數光裝置19被形成格子狀之複數分割預定線(切割道)17被區劃而形成。
當藉由與本發明實施形態有關之剝離方法時,首先作為第1工程,如圖2(A)所示般,實施將移設基板27接合至光裝置晶圓11之光裝置層15之表面的移設基板接合工程。在本實施形態中,如圖3所示般,經由金錫(AuSn)所構成之接合金屬層29,接合厚度為1mm之銅基板所構成之移設基板27之表面27a。
另外,作為移設基板27,可以使用鉬(Mo)、矽(Si)等,作為形成接合金屬層29之接合金屬,可以使用金(Au)、鉑(Pt)、鉻(Cr)、銦(In)、鈀(Pd)等。
在該移設基板接合工程中,在被形成在藍寶石基板13之表面的光裝置層15之表面或移設基板27之表面27a,蒸鍍上述接合金屬而形成厚度為3μm左右之接合金屬層29,藉由使該接合金屬層29和移設基板27之表面27a或光裝置層15之表面面對面而予以壓接,將移設基板27經由接合金屬層29而接合於光裝置晶圓11之光裝置層15,形成圖2(B)所示之複合基板31。
於實施移設基板接合工程之後,實施緩衝層破壞工程,該緩衝層破壞工程係從藍寶石基板13之背面13b側,對藍寶石基板13照射相對於藍寶石基板13具有穿透性,相對於緩衝層21具有吸收性之波長的脈衝雷射光束。
雖然以在該緩衝層破壞工程中,將脈衝雷射光束之聚光點定位在緩衝層21之前方側之藍寶石基板13之內部,而從藍寶石基板13之背面13b側照射脈衝雷射光束為佳,但是即使藉由控制脈衝雷射光束之輸出,將脈衝雷射光束之聚光點定位在緩衝層21而進行照射亦可。
圖4表示緩衝層破壞工程之斜視圖,圖5表示緩衝層破壞工程之一部分剖面側面圖。如圖4所示般,雷射光束照射單元12包含被收容在概略圓筒形之殼體14中的雷射光束產生單元16,和被安裝於殼體14之前端的聚光器18。
雷射光束產生單元16係包含由YAG或YVO4所構成之雷射振盪器,和重複頻率設定手段、脈衝寬調整手段及功率調整手段等之以往眾知的構成。
聚光器18包含反射從雷射光束產生單元16產生的雷射光束之電流計面鏡20,和聚光在電流計面鏡20反射之雷射光束的聚光透鏡22。在光裝置晶圓11接合移設基板27的複合基板31,被吸引保持於靜止的挾盤載置台10。
在圖4及圖5中,雖然聚光透鏡22相對於被保持於挾盤載置台10之複合基板31之大小被描繪成非常小,但是實際上,因設成相對於靜止的光裝置晶圓11之全面,藉由電流計面鏡20之角度變更,能夠掃描雷射光束,故聚光透鏡22以具有與光裝置晶圓11之直徑相同程度之直徑為佳。
當根據本發明之剝離方法時,以緩衝層破壞工程中之雷射光束之照射方法為重要。在圖6(A)所示之第1實施形態中,從磊晶基板亦即藍寶石基板13之背面13b側,將脈衝雷射光束從藍寶石基板13之中心C1,藉由控制電流計面鏡20,如箭號A所示般,朝向藍寶石基板13之外周,以成為螺旋狀之軌跡之方式進行照射。
以鄰接之螺旋的間隔比脈衝雷射光束之點徑僅小一點,被螺旋狀地照射的脈衝雷射光束之一部分(以60~80%為佳)重疊之方式,掃描脈衝雷射光束為佳。
但是,脈衝雷射光束朝藍寶石基板13成為螺旋狀之軌跡般的照射,並不限定於根據電流計面鏡20的掃描,即使藉由其他雷射光束掃描手段,或固定聚光器18,使挾盤載置台10螺旋狀地移動來實現亦可。
藉由將脈衝雷射光束進行如此地掃描,脈衝雷射光束被照射至與緩衝層21之全面對應的區域。依此,藉由構成緩衝層21之GaN分離成Ga和N2
氣體,產生的氣體被封閉在藍寶石基板13內,產生應力,但是脈衝雷射光束之照射到達藍寶石基板13之最外周,緩衝層破壞工程結束時,因該應力與緩衝層破壞工程之結束同時被釋放,故藉由該釋放之反作用力,不施加超音波等之外力,可以從藍寶石基板13剝離光裝置層15而移設至移設基板27。
當參照圖6(B)時,顯示表示緩衝層破壞工程之第2實施形態的俯視圖。在該第2實施形態中,在除了藍寶石基板13之外周部的中央部分,如箭號B所示般直線狀地照射脈衝雷射光束而實施第1緩衝層破壞工程。
即使在該實施形態中,直線狀之脈衝雷射光束之照射以雷射點徑之一部分重疊般之間隔進行照射為佳。依此,雖然藉由構成緩衝層21之GaN分離成Ga和N2
氣體,在基板13內部產生應力,但是在第1緩衝層破壞工程中,該應力仍然被封閉在複合基板31之內部。
當直線狀之脈衝雷射光束之照射結束時,實施如箭號C所示般朝向藍寶石基板13之外周以成為螺旋狀之軌跡之方式照射脈衝雷射光束之第2緩衝層破壞工程。
因脈衝雷射光束之照射到達至藍寶石基板13之最外周時,即是第2緩衝層破壞工程結束時,被封閉在基板13內部之N2
氣體被排出而應力被釋放,故藉由該應力釋放之反作用力,不施加超音波等之外力,可以從藍寶石基板13剝離光裝置層15而移設至移設基板27。
在上述緩衝層破壞工程中,緩衝層21被破壞而產生N2
氣體,依此產生的應力被封閉於複合基板31內部,因需要與緩衝層破壞工程結束同時,釋放該應力,故若為薄的藍寶石基板13時,由於被封閉之氣體的應力會被破壞,因此藍寶石基板13之厚度以0.5mm~1.5mm之範圍內為佳。
緩衝層破壞工程以例如以下之雷射加工條件來實施為佳。
光源:YAG脈衝雷射或YVO4脈衝雷射 波長:257nm 重覆頻率:50~200kHz 平均輸出:0.1~2.0W 脈衝能:0.5~10μJ 點徑:10~50μm 雷射光束之掃描速度:50~100mm/s
在本發明實施形態之緩衝層破壞工程中,先將在緩衝層破壞工程中產生的N2
氣體所致的應力封閉在複合基板內部,於緩衝層破壞工程結束之同時排出N2
氣體而釋放應力,因藉由該釋放之反作用力,從藍寶石基板13剝離光裝置層15,故從藍寶石基板13之中心朝向外周照射脈衝雷射光束,於緩衝層破壞工程結束之同時釋放N2
氣體所致的應力為重要。
11‧‧‧光裝置晶圓12‧‧‧雷射光束照射單元13‧‧‧藍寶石基板15‧‧‧光裝置層(磊晶層)16‧‧‧雷射光束產生單元17‧‧‧分割預定線(切割道)18‧‧‧聚光器19‧‧‧光裝置20‧‧‧電流計面鏡21‧‧‧緩衝層22‧‧‧聚光透鏡23‧‧‧n型氮化鎵半導體層25‧‧‧p型氮化鎵半導體層27‧‧‧移設基板29‧‧‧接合金屬層31‧‧‧複合基板
圖1(A)為光裝置晶圓之斜視圖,圖1(B)為光裝置晶圓之一部分放大剖面圖。 圖2(A)係表示移設基板接合工程的斜視圖,圖2(B)係將移設基板接合於光裝置晶圓而形成的複合基板之斜視圖。 圖3為複合基板之一部放大剖面圖。 圖4為表示緩衝層破壞工程的斜視圖。 圖5為表示緩衝層破壞工程的一部分剖面側面圖。 圖6(A)係從磊晶基板之內周部朝向外周部螺旋狀地實施緩衝層破壞工程之第1實施形態之示意性俯視圖,圖6(B)係在磊晶基板之中央部直線性地實施緩衝層破壞工程之後,螺旋狀地加工外周部的第2實施形態之示意性俯視圖。
13‧‧‧藍寶石基板
13b‧‧‧背面
31‧‧‧複合基板
Claims (2)
- 一種剝離方法,其係將在磊晶基板之表面隔著GaN緩衝層而疊層光裝置層之光裝置晶圓之該光裝置層,轉移至移設基板的剝離方法,其特徵在於,具備:移設基板接合工程,其係在該光裝置晶圓之該光裝置層之表面隔著接合層而接合移設基板而形成複合基板;緩衝層破壞工程,其係從構成該複合基板之該光裝置晶圓之該磊晶基板之背面側,對該磊晶基板照射相對於該磊晶基板具有穿透性且相對於該緩衝層具有吸收性之波長的脈衝雷射光束,破壞該緩衝層;及光裝置層移設工程,其係於實施該緩衝層破壞工程之後,從該磊晶基板剝離該光裝置層而移設至該移設基板,該緩衝層破壞工程係藉由先實施朝該磊晶基板之中央部照射脈衝雷射光束,接著對該中央部實施照射外周部之脈衝雷射光束,依此由於對該中央部照射脈衝雷射光束,構成該緩衝層的GaN分離成Ga和N2氣體,所產生的N2氣體被封閉於磊晶基板內而產生應力,該應力藉由該脈衝雷射光束朝該磊晶基板之最外周的照射,與該緩衝層破壞工程結束同時被釋放,藉由該釋放的反作用力,從該磊晶基板剝離該光裝置層而移設至該移設基板。
- 如請求項1所記載之剝離方法,其中上述磊晶基板之厚度為0.5mm~1.5mm之範圍內。
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