CN111799232A - 模制半导体封装的包封体中的芯片到芯片互连 - Google Patents

模制半导体封装的包封体中的芯片到芯片互连 Download PDF

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CN111799232A
CN111799232A CN202010257635.5A CN202010257635A CN111799232A CN 111799232 A CN111799232 A CN 111799232A CN 202010257635 A CN202010257635 A CN 202010257635A CN 111799232 A CN111799232 A CN 111799232A
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conductive
semiconductor die
laser
pad
die
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CN202010257635.5A
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K·C·A·苏
张超发
S·马海因尔
W·C·杨
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明公开了一种封装半导体器件，其包括：具有上表面的电绝缘包封体主体；包封在所述包封体主体内的第一半导体管芯，所述第一半导体管芯包括主表面，所述主表面具有面对所述包封体主体的上表面的第一导电焊盘；包封在所述包封体主体内并与第一半导体芯片横向并排设置的第二半导体管芯，所述第二半导体管芯具有主表面，所述主表面具有面对所述包封体主体的上表面的第二导电焊盘；以及第一导电轨，其形成在所述包封体主体的上表面中，并且将所述第一导电焊盘电连接到所述第二导电焊盘。包封体主体包括可激光激活的模制化合物。

Description

模制半导体封装的包封体中的芯片到芯片互连
技术领域
本发明的实施例涉及一种半导体封装及其方法。
背景技术
半导体应用中的普遍趋势是减小特定半导体器件的尺寸和/或增加特定半导体器件的功能能力而不增加其尺寸。这种缩放趋势导致半导体管芯具有密集布置的接合焊盘。这些半导体管芯带来了关于器件封装的设计挑战。尤其是，为具有密集布置的接合焊盘的半导体管芯的每个端子提供独特的电连接的封装解决方案带来了挑战。诸如接合线、夹具、带等常规的封装互连结构对于这些电连接可能是无效的和/或性能受到限制。
发明内容
公开了一种封装半导体器件。根据实施例，封装半导体器件包括：具有上表面的电绝缘包封体主体；被包封在所述包封体主体内的第一半导体管芯，所述第一半导体管芯具有主表面，所述主表面具有面对所述包封体主体的上表面的第一导电焊盘；第二半导体管芯，其被包封在所述包封体主体内并与所述第一半导体管芯横向并排设置，所述第二半导体管芯具有主表面，所述主表面具有面对所述包封体主体的上表面的第二导电焊盘；以及第一导电轨，其形成在所述包封体主体的上表面中，并将第一导电焊盘电连接到第二导电焊盘。包封体主体包括可激光激活的模制化合物。
单独地或组合地，第一垂直互连结构设置在第一导电焊盘上，并且第二垂直互连结构设置在第二导电焊盘上，第一导电焊盘和第二导电焊盘被包封体主体的材料覆盖，并且第一垂直互连结构和第二垂直互连结构均包括从包封体主体的上表面暴露的外端。
单独地或组合地，第一导电轨与第一和第二垂直互连结构的外端直接连接。
单独地或组合地，第一垂直互连结构是附接到第一导电焊盘的线钉凸块。
单独地或组合地，第二垂直互连结构是附接到第二导电焊盘的金属柱。
单独地或组合地，第二导电轨形成在包封体主体的上表面中，并且第二导电轨形成在可激光激活的模制化合物的第二激光激活区域中。
单独地或组合地，第一半导体管芯的主表面包括第三导电焊盘，第二半导体管芯的主表面包括第四导电焊盘，并且第二导电轨将第三导电焊盘电连接到第四导电焊盘。
单独地或组合地，第一导电轨包括在第一方向上延伸的伸长跨度，第二导电轨包括在第二方向上延伸的伸长跨度，并且第一方向和第二方向相对于彼此成角度。
单独地或组合地，保护层覆盖第一导电轨，并且保护层包括与可激光激活的模制化合物不同的电绝缘材料。
单独地或组合地，封装半导体器件还包括管芯垫(die paddle)和远离管芯垫延伸的多个导电引线，第一半导体管芯和第二半导体管芯安装在管芯垫的横向相邻区域上，并且包封体主体的上表面与管芯垫相对。
单独地或组合地，第一半导体管芯和第二半导体管芯通过间隙在横向上彼此分开，包封体主体的第一部分填充该间隙，并且第一导电轨形成在包封体主体的第一部分上。
公开了一种形成封装半导体器件的方法。根据该方法的实施例，提供包括具有第一导电焊盘的主表面的第一半导体管芯，提供包括具有第二导电焊盘的主表面的第二半导体管芯，第一和第二半导体管芯被包封以使得第二半导体管芯与第一半导体管芯横向并排设置，并且使得第一半导体管芯和第二半导体管芯的主表面均面对包封体主体的上表面，并且在包封体主体的上表面中形成将第一导电焊盘电连接到第二导电焊盘的第一导电轨。包封体主体包括可激光激活的模制化合物。第一导电轨形成在可激光激活的模制化合物的第一激光激活区域中。
单独地或组合地，形成第一导电轨包括：将激光引导到可激光激活的模制化合物上，从而形成第一激光激活区域；以及执行在第一激光激活区域中形成导电材料的镀覆工艺。
单独地或组合地，镀覆工艺是化学镀液镀覆工艺。
单独地或组合地，该方法还包括：在包封之前，在第一导电焊盘上提供第一垂直互连结构；在包封之前，在第二导电焊盘上提供第二垂直互连结构，所述包封用包封体主体的材料覆盖第一和第二导电焊盘，并且在包封之后，第一和第二垂直互连结构的外端在包封体主体的上表面处暴露。
单独地或组合地，第一半导体管芯和第二半导体管芯的包封包括用包封体主体的材料完全覆盖第一垂直互连结构，并且该方法还包括在包封之后执行减薄工艺，并且减薄工艺从包封体主体的上表面去除材料，直到第一和第二垂直互连结构的外端从包封体主体暴露。
单独地或组合地，包封第一半导体管芯和第二半导体管芯包括注塑模制工艺，并且注塑模制工艺包括使用注塑腔，该注塑腔的尺寸被设置为用液化的模制材料覆盖第一和第二半导体管芯的主表面，同时从液化的模制材料暴露第一和第二垂直互连结构的外端。
单独地或组合地，第一导电轨形成为直接与第一垂直互连结构和第二垂直互连结构的外端连接。
单独地或组合地，该方法还包括形成覆盖第一导电轨的保护层，并且该保护层包括与可激光激活的模制化合物不同的电绝缘材料。
单独地或组合地，该方法还包括：提供具有多个导电引线的管芯垫，所述导电引线远离管芯垫延伸；将与第一半导体管芯的主表面相对的第一半导体管芯的下表面附接到管芯垫的第一横向区域；将与第二半导体管芯的主表面相对的第二半导体管芯的下表面附接到管芯垫的第二横向区域，第二横向区域在横向上与第一横向区域相邻，并且包封体主体的上表面与管芯垫相对。
本领域技术人员在阅读以下具体实施方式并在查看附图时将认识到附加的特征和优点。
附图说明
附图的要素不必相对于彼此按比例绘制。类似的附图标记指示对应的相似部分。除非它们相互排斥，否则可以组合各种所示实施例的特征。在附图中描绘了实施例，并且在以下描述中详细说明了实施例。
图1包括图1A和图1B，示出了形成封装半导体器件的方法中的初始步骤。图1A示出了提供载体，并且图1B示出了在载体的管芯附接表面上安装第一半导体管芯和第二半导体管芯。
图2示出了在第一和第二半导体管芯的导电接合焊盘上提供垂直互连结构。
图3包括图3A和图3B，示出了可以提供在导电接合焊盘上的凸起的导电导体的各种实施例。图3A示出了线钉凸块构造，并且图3B示出了金属柱构造。
图4示出了形成包封体主体，该包封体主体包封半导体管芯并在上表面处暴露垂直互连结构的外端。
图5示出了执行激光激活工艺，该激光激活工艺在包封体主体的上表面中形成激光激活区域。
图6示出了执行镀覆工艺，该镀覆工艺在包封体主体的激光激活区域中形成导电轨。
图7示出了在形成于包封体主体的激光激活区域中的导电轨上形成保护层。
具体实施方式
本文描述的实施例提供了一种半导体封装，该半导体封装具有在包封体主体的顶侧中形成的布线层。在实施例中，顶侧布线层用于将两个或更多个封装半导体管芯电连接在一起。可以通过经由激光图案化技术形成的导电轨来提供顶侧布线层。根据该技术，包封体主体包括可激光激活的模制化合物。将激光束施加到可激光激活的模制化合物，从而沿着限定的轨迹形成激光激活区域。这些激光激活区域为随后的在包封体主体上形成导电轨的镀覆工艺提供了种子。这些导电轨可以与凸起的导电连接(例如，凸块、柱等)结合使用，以提供包封的半导体管芯的接合焊盘之间的完整电连接。另外，由于激光图案化技术的高分辨率和几何形状灵活性，本文所述的顶侧布线层提供了高密度互连能力，其可以与现有的互连技术相结合以满足现代半导体器件的互连要求。另外，导电轨可以有利地用于在较低电流/电压信号的两个管芯之间提供逻辑互连，而高电流/电压信号(例如，功率信号)可以由封装器件的较粗的引线分配。
参照图1，示出了根据实施例的载体结构100。在该实施例中，载体结构100由引线框架提供，其中引线框架包括位于中心的管芯垫102和远离管芯垫102延伸的多个(即，两个或更多)导电引线104。管芯垫102包括平面管芯附接表面106，其为在其上安装一个或多个半导体管芯提供空间。根据实施例，管芯垫102与一些引线104一体地连接，并因此提供用于半导体管芯的端子的连接点。一般而言，载体结构100可以包括诸如铜、铝等的导电金属及其合金。
参照图2，第一半导体管芯108和第二半导体管芯110提供在载体结构100上。一般而言，第一半导体管芯108和第二半导体管芯110可以具有多种器件构造。这些器件构造包括分立的器件构造，例如HEMT(高电子迁移率晶体管)器件、二极管、晶闸管等。这些器件构造还包括集成器件构造，例如控制器、放大器等。这些器件构造可以包括垂直器件(即，在与管芯的主表面和后表面垂直的方向上进行传导的器件)和横向器件(即，在与管芯的主表面平行的方向上进行传导的器件。
第一半导体管芯108和第二半导体管芯110均具有主表面112、与主表面112相对的后表面114(见图7)、以及在主表面112和后表面114之间延伸的外边缘侧116。第一半导体管芯108的主表面112包括第一导电接合焊盘118。第二半导体管芯110的主表面112包括第二导电接合焊盘120。在所示的实施例中，第一半导体管芯108的主表面112另外包括第三导电接合焊盘122，并且第二半导体管芯110的主表面112另外包括第四导电接合焊盘124。这些接合焊盘为并入到第一半导体管芯108和第二半导体管芯110的器件提供端子连接(例如，栅极、源极、发射极、集电极、逻辑端子等)。更一般地，接合焊盘的数量、大小和构造可以发生变化。可选地，第一半导体管芯108和/或第二半导体管芯110的后表面114可以包括类似配置的接合焊盘，其为相应器件提供端子连接。
第二半导体管芯110与第一半导体管芯108横向并排布置。这意味着第二半导体管芯110的外边缘侧116面对第一半导体管芯108的外边缘侧116。因此，第一半导体管芯108和第二半导体管芯110在横向方向上彼此紧邻。横向方向是指平行于半导体管芯108、110的主表面112和后表面114的方向。如图所示，第一半导体管芯108和第二半导体管芯110通过间隙在横向上彼此分开。在其他构造中，第一半导体管芯108和第二半导体管芯110可以彼此齐平或彼此接近齐平。
第一半导体管芯108和第二半导体管芯110安装在管芯附接表面106的横向相邻区域上。在该构造中，第一半导体管芯108的后表面114面对并直接附接到管芯附接表面106的第一区域，并且第二半导体管芯110的后表面114面对并直接附接到管芯附接表面106的与第一区域横向间隔开的第二区域。每个半导体管芯108、110的后表面114可以通过粘合剂(例如焊料、导电胶等)直接附接到载体。
参照图2，在第一半导体管芯108和第二半导体管芯110的导电焊盘上提供垂直互连结构126。这些垂直互连结构126在第一半导体管芯108和第二半导体管芯110的主表面112上方垂直延伸，并因此代表已安装的半导体管芯108、110的最上面的接触表面。这些垂直互连结构的各种示例在图3中更详细地示出。垂直互连结构126可以在将半导体管芯108、110安装在管芯垫102上之后附接到接合焊盘。替代地，可以在将半导体管芯108、110安装在管芯垫102上之前在互连焊盘上提供垂直互连结构126。在下面要描述的包封步骤之前，可以使用诸如引线接合的已知技术来提供引线104与两个半导体管芯108、110之间的电连接(未示出)。
参照图3A，垂直互连结构126可以被配置为线钉凸块。这些线钉凸块由例如铜、金、铝、镍等及其合金的导电材料制成。这些结构是通过在接合焊盘上沉积小滴的液化金属而形成的。如图所示，垂直互连结构126包括连续地沉积在另一个顶部上的多个凸块(球)。
参照图3B，垂直互连结构126可以被配置为金属柱。这些金属柱由例如铜、金、铝、镍等及其合金的导电金属制成。
更一般地，垂直互连结构126可以由任何导电结构提供，该导电结构可以附接到接合焊盘以提供经过半导体管芯的主表面112的垂直延伸。
再次参照图2，提供在第一半导体管芯108的接合焊盘118、122上的垂直互连结构126可以具有上述构造中的任何构造。同样，提供在第二半导体管芯120的接合焊盘120、124上的垂直互连结构126可以具有上述构造中的任何构造，并且可以具有与第一半导体管芯108的垂直互连结构的构造不同的构造。
参照图4，形成电绝缘包封体主体128。包封体主体128是电绝缘结构，其密封并保护半导体管芯和相关联的电连接，例如，半导体管芯108、110与引线104之间的引线接合(未示出)。例如，包封体主体128可以包括各种各样的电绝缘材料，例如陶瓷、环氧树脂材料和热固性塑料，仅举几例。电绝缘包封体主体128的至少一部分包括可激光激活的模制化合物。如本文所用，“可激光激活的模制化合物”是指包括例如有机金属络合物形式的至少一种添加剂的模制化合物，所述添加剂通过由聚焦激光束引起的物理化学反应而被激活。除了添加剂之外，“可激光激活的模制化合物”还包括聚合物材料作为基础材料。这些聚合物的示例包括具有树脂基的热固性聚合物、ABS(丙烯腈丁二烯苯乙烯)、PC/ABS(聚碳酸酯/丙烯腈丁二烯苯乙烯)、PC(聚碳酸酯)PA/PPA(聚酰亚胺/聚邻苯二甲酰胺)、PBT(聚对苯二甲酸丁二醇酯)、COP(环烯烃聚合物)、PPE(聚苯醚)、LCP(液晶聚合物)、PEI(聚乙烯亚胺或聚氮丙啶)、PEEK(聚醚醚酮)、PPS(聚苯硫醚)等。
可以使用诸如注塑模制、传递模制、压缩模制等多种已知技术中的任何一种来形成包封体主体128。包封体主体128的材料形成为完全包封(即，覆盖并围绕)半导体管芯108、110以及在半导体管芯108、110与引线104之间的相关联的电连接。在半导体管芯108、110通过横向间隙彼此分开的情况下(例如，如图2所示)，包封体主体128可以形成为完全填充该间隙。
包封体主体128包括上表面130。包封体主体128被形成为使得第一半导体管芯108和第二半导体管芯110的主表面112完全被包封体材料覆盖。换句话说，在第一半导体管芯108和第二半导体管芯110的主表面112与包封体主体128的上表面130之间提供一定厚度的包封体材料。因此，第一半导体管芯108和第二半导体管芯110的主表面112(图4中未示出)面对包封体主体128的上表面130。
包封体主体128被形成为使得垂直互连结构126的外端132在包封体主体128的上表面130处从包封体材料暴露。这意味着垂直互连结构126的导电材料在包封体主体128的上表面130处是物理上可触及的。
一种用于将包封体主体128形成为使得垂直互连结构126的外端132在包封体主体128的上表面130处被暴露的技术如下。在一些实施例中，初始地，包封体主体128形成为用包封体材料完全覆盖垂直互连结构126。即，包封体主体128在半导体管芯108、110的主表面112与上表面130之间的的厚度被选择为大于垂直互连结构126的高度。随后，执行减薄工艺以去除上表面130处的包封体材料，直到垂直互连结构126的外端132从包封体主体128暴露出来。可以根据已知的平坦化技术(例如，抛光、研磨、蚀刻等)来进行这种减薄。在另一示例中，可以通过激光去除包封体材料。该激光减薄技术还可以提供将在下面进一步详细描述的激光激活工艺。
用于将包封体主体128形成为使得垂直互连结构126的外端132在包封体主体128的上表面130处被暴露的另一技术如下。控制用于形成包封体主体128的工艺，以使得完成的包封体主体128暴露出垂直互连结构126的外端132。换句话说，半导体管芯108、110的主表面112与包封体主体128的上表面130之间的包封材料的厚度被选择为小于接合焊盘上方的垂直互连结构126的高度。在该技术的一个示例中，包封体主体128通过注塑模制工艺形成，该工艺利用注塑腔，该注塑腔的尺寸被设置为用液化的模制材料覆盖第一半导体管芯108和第二半导体管芯110的主表面，而不覆盖垂直互连结构126的外端132。在执行该初始注塑模制工艺之后，可以执行进一步的处理步骤。这些步骤可以包括清洁步骤、用以平坦化垂直互连结构126的暴露的外端132的平坦化步骤、和/或用以形成包封体主体128的附加部分的其他模制步骤。
参照图5，在包封体主体128的上表面130上执行激光激活工艺。该激光激活工艺包括将激光束引导到存在于包封体主体128的上表面130处的可激光激活的模制化合物上。来自激光束的能量在包封体主体128中产生激光激活区域134。如本文所用，“激光激活区域”是指可激光激活的模制化合物的如下区域：该区域与激光束发生反应，以使得有机金属络合物存在于可激光激活的模制化合物的表面并能够充当金属镀覆工艺的核，下面将更详细地描述其示例。相反，可激光激活的模制化合物的未暴露于激光束的部分不具有能够在金属镀覆工艺期间充当核的暴露的金属络合物。
参照图6，在半导体器件上执行镀覆工艺。镀覆工艺在模制化合物的激光激活区域134中形成导电材料，而基本上不在可激光激活的模制化合物的去激活区域中形成导电材料。这意味着通过镀覆工艺形成的绝大多数金属(例如，大于95％、99％等)形成在激光激活区域134中。此外，形成在激光激活区域134中的导电材料形成能够承载电流的限定的导电轨。
总体而言，镀覆工艺可以是利用种子金属作为在其上沉积金属的基础的任何金属镀覆工艺。在一个示例中，镀覆工艺是化学镀液镀覆工艺。根据该技术，将半导体器件浸入包含金属离子(例如，Cu+离子、Ni+离子、Ag+离子等)的化学浴中，这些金属离子在随后的激活区域中与有机金属络合物发生反应，从而形成来自化学浴的元素的完整层。镀覆工艺可以开始于清洁步骤，以去除激光碎屑，并且然后可以使用化学浴对镀覆的金属进行添加物堆积。可选地，可以在镀覆工艺之后将附加的金属涂层(例如包含Ni、Au、Sn、Sn/Pb、Ag、Ag/Pd等的涂层)施加在沉积的金属上。
作为上述激光激活和镀覆步骤的结果，在可激光激活的模制化合物的激光激活区域134中形成了多个导电轨136。这些导电轨136可以用于在封装在包封体主体128内包封的半导体管芯的端子之间提供电连接。如图所示，导电轨136形成为跨过包封体材料的填充第一和第二半导体管芯108、110之间的间隙的部分延伸，并因此提供横向电连接机构。更一般地，这些导电轨136可以形成在包括可激光激活的模制化合物的包封体主体128的任何位置中。
根据实施例，导电轨136中的第一导电轨138将第一半导体管芯108的第一导电焊盘118(如图2所示)电连接到第二半导体管芯110的第二导电焊盘120(如图2所示)。在该情况下，导电轨136中的第一导电轨138在垂直互连结构126中的设置在第一导电焊盘118上的第一垂直互连结构142与垂直互连结构126中的设置在第二导电焊盘120上的第二垂直互连结构144之间形成电连接。类似地，导电轨136中的第二导电轨140在垂直互连结构126中的设置在第三导电焊盘122(如图2所示)上的第三垂直互连结构146与垂直互连结构126中的设置在第四导电焊盘124(如图2所示)上的第四垂直互连结构148之间形成电连接。在所描绘的实施例中，这些导电轨136在两个垂直互连结构126的暴露的外端132之间形成完整的电连接。替代地，其他导电结构(例如，接合线、夹具、过孔结构等)可以是两个垂直互连结构126的暴露的外端132之间的电连接的部分。
更一般地，可以在包封体主体128的上表面130中形成任何数量的导电轨136，以在包封体主体128内包封的两个或更多个半导体管芯之间提供电连接。这些导电轨136可以提供独立的电节点，例如，在如上所述的导电轨136中的第一导电轨和第二导电轨138、140的情况下，或者这些导电轨136可以是单个电节点的部分，例如用于增加电流承载能力。
有利地，本文描述的激光结构化技术允许导电轨136形成为窄宽度和/或紧密间距结构。由于导电轨136的几何形状与激光束的宽度相关，所以可以以高分辨率来形成这些结构。此外，激光技术相对于导电轨136的几何形状提供了高度的灵活性。换句话说，与常规的金属化技术相比，不需要限制性的接地规则。在对此能力的说明中，所描绘的实施例中的导电轨136中的第一导电轨138包括在第一方向上延伸的第一伸长跨度150，并且导电轨136中的第二导电轨140包括在相对于第一方向成角度的第二方向上延伸的第二伸长跨度152。也就是说，第一和第二伸长跨度150、152被定向为彼此不平行，例如，大约垂直。更一般地，通过激光结构化技术形成的导电轨136可以定向为相对于彼此成各种角度中的任何角度，例如倾斜、锐角等。此外，不同的导电轨136可以具有不同的宽度、长度等。此外，如图所示，导电轨136可以形成为沿不同的平面延伸。例如，图5所示的导电轨136包括倾斜区域，该倾斜区域从半导体管芯之上的凹部延伸至包封体材料的填充半导体管芯之间的间隙的部分。有利地，可以在不使用昂贵的掩模的情况下形成这些结构中的任何结构。
参照图7，在以上述方式形成导电轨136之后，可以形成可选的保护层154以覆盖一些或全部导电轨136。其中，保护层154可以防止例如由于水分、颗粒、器件的物理处理等而损坏导电轨136。保护层154可以由与可激光激活的模制化合物的材料不同的电绝缘材料形成。这些材料的示例包括基于环氧树脂的塑料和基于金刚石的材料，仅举几例。
尽管在所示的实施例中使用了特定的引线框架式封装，但是本文描述的激光连接技术更一般地适用于多种多样的封装类型。这些封装类型包括扁平封装、有引线封装、无引线封装和表面安装型封装，仅举几例。在任何这些示例中，可激光激活的模制化合物可以部分或全部用作包封体材料，并根据本文所述的技术进行结构化。
如本文所述，包封体主体的“上表面”是指包封体主体的如下表面：该表面设置在一个或多个半导体管芯上方以使得被覆盖的半导体管芯的上表面面对包封体主体的上表面。包封体主体的“上表面”不一定是封装器件的最外面的暴露表面。例如，如图7的实施例所示，包封体主体的上表面130被保护层覆盖。另外或替代地，可以在包封体主体的“上表面”的至少一部分之上形成包封体材料的附加层，以使得本文所述的导电轨136被嵌入在包封体材料内。
术语“电连接”、“直接电连接”等描述了电连接的元件之间的永久性低阻抗连接，例如相关元件之间的直接接触、或经由金属和/或高掺杂的半导体的低阻抗连接。
如本文中所使用的，术语“具有”、“包含”、“包括”等是开放式术语，其指示所陈述的元件或特征的存在，但是不排除附加的元件或特征。除非上下文另外明确指出，否则冠词“一”和“所述”旨在包括复数和单数。
尽管本文中已经示出和描述了具体实施例，但是本领域普通技术人员将理解，在不脱离本发明的范围的情况下，各种替代和/或等效实施方式可以代替所示出和描述的具体实施例。本申请旨在覆盖本文讨论的具体实施例的任何改编或变型。因此，旨在使本发明仅由权利要求及其等同物限制。

Claims (20)

1.一种封装半导体器件，包括：
电绝缘包封体主体，其包括上表面；
第一半导体管芯，其被包封在所述包封体主体内，所述第一半导体管芯包括主表面，所述第一半导体管芯的所述主表面具有面对所述包封体主体的所述上表面的第一导电焊盘；
第二半导体管芯，其被包封在所述包封体主体内，并与所述第一半导体管芯横向并排设置，所述第二半导体管芯包括主表面，所述第二半导体管芯的所述主表面具有面对所述包封体主体的所述上表面的第二导电焊盘；以及
第一导电轨，其形成在所述包封体主体的所述上表面中，并且将所述第一导电焊盘电连接到所述第二导电焊盘，
其中，所述包封体主体包括可激光激活的模制化合物；
其中，所述第一导电轨形成在所述可激光激活的模制化合物的第一激光激活区域中。
2.根据权利要求1所述的封装半导体器件，还包括：
第一垂直互连结构，其设置在所述第一导电焊盘上；以及
第二垂直互连结构，其设置在所述第二导电焊盘上，
其中，所述第一导电焊盘和所述第二导电焊盘被所述包封体主体的材料覆盖，并且
其中，所述第一垂直互连结构和所述第二垂直互连结构均包括在所述上表面处从所述包封体主体暴露的外端。
3.根据权利要求2所述的封装半导体器件，其中，所述第一导电轨与所述第一垂直互连结构和所述第二垂直互连结构的所述外端直接连接。
4.根据权利要求2所述的封装半导体器件，其中，所述第一垂直互连结构是附接到所述第一导电焊盘的线钉凸块。
5.根据权利要求2所述的封装半导体器件，其中，所述第二垂直互连结构是附接到所述第二导电焊盘的金属柱。
6.根据权利要求1所述的封装半导体器件，还包括形成在所述包封体主体的所述上表面中的第二导电轨，其中，所述第二导电轨形成在所述可激光激活的模制化合物的第二激光激活区域中。
7.根据权利要求6所述的封装半导体器件，其中，所述第一半导体管芯的所述主表面包括第三导电焊盘，其中，所述第二半导体管芯的所述主表面包括第四导电焊盘，并且其中，所述第二导电轨将所述第三导电焊盘电连接到所述第四导电焊盘。
8.根据权利要求7所述的封装半导体器件，其中，所述第一导电轨包括在第一方向上延伸的伸长跨度，其中，所述第二导电轨包括在第二方向上延伸的伸长跨度，并且其中，所述第一方向和所述第二方向相对于彼此成角度。
9.根据权利要求1所述的封装半导体器件，还包括覆盖所述第一导电轨的保护层，其中，所述保护层包括与所述可激光激活的模制化合物不同的电绝缘材料。
10.根据权利要求1所述的封装半导体器件，还包括管芯垫和远离所述管芯垫延伸的多个导电引线，其中，所述第一半导体管芯和所述第二半导体管芯中的至少一个安装在所述管芯垫上，并且其中，所述包封体主体的所述上表面与所述管芯垫相对。
11.根据权利要求1所述的封装半导体器件，其中，所述第一半导体管芯和所述第二半导体管芯通过间隙在横向上彼此分开，其中，所述包封体主体的第一部分填充所述间隙，并且其中，所述第一导电轨形成在所述包封体主体的所述第一部分上。
12.一种形成封装半导体器件的方法，包括：
提供第一半导体管芯，所述第一半导体管芯包括具有第一导电焊盘的主表面；
提供第二半导体管芯，所述第二半导体管芯包括具有第二导电焊盘的主表面；
包封所述第一半导体管芯和所述第二半导体管芯，以使得所述第二半导体管芯与所述第一半导体管芯横向并排布置，并且所述第一半导体管芯和所述第二半导体管芯的所述主表面均面对所述包封体主体的上表面；以及
在所述包封体主体的所述上表面中形成第一导电轨，所述第一导电轨将所述第一导电焊盘电连接到所述第二导电焊盘；
其中，所述包封体主体包括可激光激活的模制化合物；并且
其中，所述第一导电轨形成在所述可激光激活的模制化合物的第一激光激活区域中。
13.根据权利要求12所述的方法，其中，形成所述第一导电轨包括：
将激光引导到所述可激光激活的模制化合物上，从而形成所述第一激光激活区域；以及
执行在所述第一激光激活区域中形成导电材料的镀覆工艺。
14.根据权利要求13所述的方法，其中，所述镀覆工艺是化学镀液镀覆工艺。
15.根据权利要求11所述的方法，还包括：
在所述包封之前，在所述第一导电焊盘上提供第一垂直互连结构；
在所述包封之前，在所述第二导电焊盘上提供第二垂直互连结构，
其中，所述包封用所述包封体主体的材料覆盖所述第一导电焊盘和所述第二导电焊盘，并且
其中，在所述包封之后，所述第一垂直互连结构和所述第二垂直互连结构的外端在所述包封体主体的所述上表面处被暴露。
16.根据权利要求15所述的方法，其中，包封所述第一半导体管芯和所述第二半导体管芯包括用所述包封体主体的材料完全覆盖所述第一垂直互连结构，并且其中，所述方法还包括在所述包封之后执行减薄工艺，并且其中，所述减薄工艺从所述包封体主体的所述上表面去除材料，直到所述第一垂直互连结构和所述第二垂直互连结构的所述外端从所述包封体主体暴露。
17.根据权利要求15所述的方法，其中，包封所述第一半导体管芯和所述第二半导体管芯包括注塑模制工艺，并且其中，所述注塑模制工艺包括使用注塑腔，所述注塑腔的尺寸被设置为用液化的模制材料覆盖所述第一半导体管芯和所述第二半导体管芯的所述主表面，同时使所述第一垂直互连结构和所述第二垂直互连结构的所述外端从所述液化的模制材料暴露。
18.根据权利要求15所述的方法，其中，所述第一导电轨被形成为与所述第一垂直互连结构和所述第二垂直互连结构的所述外端直接连接。
19.根据权利要求11所述的方法，还包括：
形成覆盖所述第一导电轨的保护层，其中，所述保护层包括与所述可激光激活的模制化合物不同的电绝缘材料。
20.根据权利要求11所述的方法，还包括：
提供具有多个导电引线的管芯垫，所述多个导电引线远离所述管芯垫延伸；
将与所述第一半导体管芯的所述主表面相对的所述第一半导体管芯的下表面附接到所述管芯垫的第一横向区域；
将与所述第二半导体管芯的所述主表面相对的所述第二半导体管芯的下表面附接到所述管芯垫的第二横向区域，所述第二横向区域在横向上与所述第一横向区域相邻，并且
其中，所述包封体主体的所述上表面与所述管芯垫相对。
CN202010257635.5A 2019-04-04 2020-04-03 模制半导体封装的包封体中的芯片到芯片互连 Pending CN111799232A (zh)

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