CN111725069A - 通过Ge凝结进行的硅锗FinFET形成 - Google Patents

通过Ge凝结进行的硅锗FinFET形成 Download PDF

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Publication number
CN111725069A
CN111725069A CN202010618057.3A CN202010618057A CN111725069A CN 111725069 A CN111725069 A CN 111725069A CN 202010618057 A CN202010618057 A CN 202010618057A CN 111725069 A CN111725069 A CN 111725069A
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CN
China
Prior art keywords
semiconductor fin
amorphous
thin film
substrate
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010618057.3A
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English (en)
Chinese (zh)
Inventor
J·J·徐
V·马赫卡奥特桑
K·利姆
S·S·宋
C·F·耶普
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Qualcomm Inc
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Qualcomm Inc
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Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN111725069A publication Critical patent/CN111725069A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/796—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
CN202010618057.3A 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成 Pending CN111725069A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461923489P 2014-01-03 2014-01-03
US61/923,489 2014-01-03
US14/269,981 2014-05-05
US14/269,981 US9257556B2 (en) 2014-01-03 2014-05-05 Silicon germanium FinFET formation by Ge condensation
CN201480071666.4A CN105874601A (zh) 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480071666.4A Division CN105874601A (zh) 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成

Publications (1)

Publication Number Publication Date
CN111725069A true CN111725069A (zh) 2020-09-29

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480071666.4A Pending CN105874601A (zh) 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成
CN202010618057.3A Pending CN111725069A (zh) 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成

Family Applications Before (1)

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CN201480071666.4A Pending CN105874601A (zh) 2014-01-03 2014-12-16 通过Ge凝结进行的硅锗FinFET形成

Country Status (5)

Country Link
US (1) US9257556B2 (enExample)
EP (1) EP3090448A1 (enExample)
JP (1) JP2017501586A (enExample)
CN (2) CN105874601A (enExample)
WO (1) WO2015102884A1 (enExample)

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US9245980B2 (en) * 2014-04-01 2016-01-26 Globalfoundries Inc. Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device
US9379218B2 (en) * 2014-04-25 2016-06-28 International Business Machines Corporation Fin formation in fin field effect transistors
US9564326B2 (en) * 2014-07-17 2017-02-07 International Business Machines Corporation Lithography using interface reaction
US9293588B1 (en) 2014-08-28 2016-03-22 International Business Machines Corporation FinFET with a silicon germanium alloy channel and method of fabrication thereof
US9406803B2 (en) * 2014-12-29 2016-08-02 Globalfoundries Inc. FinFET device including a uniform silicon alloy fin
US9543441B2 (en) * 2015-03-11 2017-01-10 Globalfoundries Inc. Methods, apparatus and system for fabricating high performance finFET device
US9754941B2 (en) * 2015-06-03 2017-09-05 Globalfoundries Inc. Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate
US9761667B2 (en) * 2015-07-30 2017-09-12 International Business Machines Corporation Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
TWI655774B (zh) * 2015-08-12 2019-04-01 聯華電子股份有限公司 半導體元件及其製作方法
US10529717B2 (en) * 2015-09-25 2020-01-07 International Business Machines Corporation Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction
CN106558496B (zh) * 2015-09-29 2019-09-24 中国科学院微电子研究所 半导体器件制造方法
US11018254B2 (en) 2016-03-31 2021-05-25 International Business Machines Corporation Fabrication of vertical fin transistor with multiple threshold voltages
US9953883B2 (en) 2016-04-11 2018-04-24 Samsung Electronics Co., Ltd. Semiconductor device including a field effect transistor and method for manufacturing the same
US10079233B2 (en) 2016-09-28 2018-09-18 International Business Machines Corporation Semiconductor device and method of forming the semiconductor device
US9818875B1 (en) 2016-10-17 2017-11-14 International Business Machines Corporation Approach to minimization of strain loss in strained fin field effect transistors
US10164103B2 (en) 2016-10-17 2018-12-25 International Business Machines Corporation Forming strained channel with germanium condensation
US10141189B2 (en) 2016-12-29 2018-11-27 Asm Ip Holding B.V. Methods for forming semiconductors by diffusion
US10707208B2 (en) 2017-02-27 2020-07-07 International Business Machines Corporation Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths
US10147651B1 (en) 2017-05-12 2018-12-04 International Business Machines Corporation Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels
US10229856B2 (en) 2017-05-16 2019-03-12 International Business Machines Corporation Dual channel CMOS having common gate stacks
US10236346B1 (en) 2017-10-25 2019-03-19 International Business Machines Corporation Transistor having a high germanium percentage fin channel and a gradient source/drain junction doping profile
US10699967B2 (en) 2018-06-28 2020-06-30 International Business Machines Corporation Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation
US11373870B2 (en) 2019-06-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device including performing thermal treatment on germanium layer
CN111508844A (zh) * 2020-04-28 2020-08-07 上海华力集成电路制造有限公司 Fdsoi上锗硅鳍体的制作方法

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US20110193178A1 (en) * 2010-02-09 2011-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-Notched SiGe FinFET Formation Using Condensation

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US20090085027A1 (en) * 2007-09-29 2009-04-02 Intel Corporation Three dimensional strained quantum wells and three dimensional strained surface channels by ge confinement method
US20110193178A1 (en) * 2010-02-09 2011-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-Notched SiGe FinFET Formation Using Condensation

Also Published As

Publication number Publication date
JP2017501586A (ja) 2017-01-12
WO2015102884A1 (en) 2015-07-09
EP3090448A1 (en) 2016-11-09
US9257556B2 (en) 2016-02-09
CN105874601A (zh) 2016-08-17
US20150194525A1 (en) 2015-07-09

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Application publication date: 20200929