CN111699274A - 等离子体处理装置用构件和具备它的等离子体处理装置 - Google Patents
等离子体处理装置用构件和具备它的等离子体处理装置 Download PDFInfo
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- CN111699274A CN111699274A CN201980012519.2A CN201980012519A CN111699274A CN 111699274 A CN111699274 A CN 111699274A CN 201980012519 A CN201980012519 A CN 201980012519A CN 111699274 A CN111699274 A CN 111699274A
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Abstract
本发明的等离子体处理装置用构件,具备基材和在该基材上以氧化钇为主成分的膜。而且,该膜中,闭口气孔的面积占有率为0.2%以下,由X射线衍射得到的氧化钇的(222)面的衍射峰的半峰宽为0.25°以下。本发明的等离子体处理装置具备上述等离子体处理装置用构件。
Description
技术领域
本发明涉及等离子体处理装置用构件和具备它的等离子体处理装置。
背景技术
历来,作为要求高耐等离子体性的构件,使用的是具备基材和在此基材上由氧化钇构成的膜的等离子体处理装置用构件。在这样的膜中,当残余应力大时,存在膜上发生裂纹或剥离这样的问题,从而提出了通过使膜的结晶性提高,由此减小残余应力。
具体来说,在专利文献1中记载有,由X射线衍射得到的氧化钇的衍射峰的半峰宽为1.3°以下。
在先技术文献
专利文献
专利文献1:日本特开2005-97685号公报
在这种情况下,由于要求对于等离子体的进一步的耐腐蚀性的提高,所以要求半峰宽小的膜。但是,在专利文献1中由溶胶-凝胶法形成的膜,半峰宽的最小值为0.3°,并认为通过溶胶-凝胶法难以进一步减小半峰宽。
另外,作为残余应力小的膜,已知有热喷涂法,但使用热喷涂法形成的膜,会有膜表面的开口气孔率和膜内部的闭口气孔率大,或在膜的内部也存在微裂纹这样的问题。
发明内容
本发明提供一种致密质并且残余应力小,耐腐蚀性优异的等离子体处理装置用构件和具备该等离子体处理装置用构件的等离子体处理装置。
本发明的等离子体处理装置用构件,具备基材和在该基材上以氧化钇为主成分的膜。而且,该膜中,闭口气孔率为0.2%以下,由X射线衍射得到的氧化钇的(222)面的衍射峰的半峰宽为0.25°以下。
本发明的等离子体处理装置,具备上述等离子体处理装置用构件。
本发明的等离子体处理装置用构件是致密质并且残余应力小,因此耐腐蚀性优异。
本发明的等离子体处理装置,具有高可靠性。
附图说明
本发明的目的、特色和优点,根据下述详细的说明和附图,会更加明确。
图1是表示本发明的一个实施方式的等离子体处理装置用构件的示意图。
图2是表示用于得到本发明的一个实施方式的等离子体处理装置用构件的溅射装置的示意图。
图3是表示本发明的其他实施方式的等离子体处理装置用构件的示意图。
图4是表示用于得到本发明的其他实施方式的等离子体处理装置用构件的溅射装置的示意图。
具体实施方式
以下,参照附图,对于本发明的等离子体处理装置用构件详细地进行说明。
本发明的等离子体处理装置用构件1,如图1所示,具备基材2,和在基材2的至少一部分上以氧化钇为主成分的膜3。于是,在图1中,显示以膜3被覆基材2的一个上表面2a的例子。还有,在图1中,为了明确膜3的存在而示意性地表示,并非忠实地展示基材2和膜3的厚度。
基材2,可列举例如石英、纯度99.999%(5N)以上的铝、铝6061合金等的铝合金、氮化铝质陶瓷、氧化铝质陶瓷等。所谓氮化铝质陶瓷和氧化铝质陶瓷,例如,如果是氧化铝质陶瓷,则是构成基材2的成分的合计100质量%之中,作为将Al换算成Al2O3的值的氧化铝的含量为90质量%以上的陶瓷。还有,氧化铝质陶瓷,除了含有氧化铝以外,还存在含有氧化镁、氧化钙和氧化硅等的情况。
其次,膜3以氧化钇为主成分的膜。膜3是作为贫氧的Y2O3-x(0<x<1)所代表的氧化钇时,膜3具有半导电性,因此能够抑制膜3的表面的带电。还有,在膜3中,所谓主成分就是构成膜3的成分100质量%之中占据90质量%以上的成分。
而且,分别构成基材2和膜3的成分,能够由使用了CuKα射线的X射线衍射装置进行确定,各成分的含量,例如能够通过如下方式求得:将利用ICP(Inductively CoupledPlasma)发光分光分析装置(ICP)或X射线荧光分析装置而求得的各元素的含量换算成氧化物而求得。关于膜3,通过确定可确认Y2O3的存在,如果由ICP求得的Y的含量换算成Y2O3的值为90质量%以上,则是以氧化钇为主成分的膜。
而且,膜3中,闭口气孔的面积占有率为0.2面积%以下。在此,所谓闭口气孔的面积占有率为0.2面积%以下,指的是致密的膜,也可以说是腐蚀以闭口气孔为起点而进展的情况少的膜。还有,所谓闭口气孔的面积占有率为0.2面积%以下,是与由等离子体热喷涂法、悬浮液热喷涂法、气溶胶沉积(AD)法所得到的膜相比小的值。这些成膜方法因为以粉末作为原料,所以闭口气孔的面积率容易变大。
另外,膜3中,也可以是闭口气孔的当量圆直径的平均值为8μm以下。若闭口气孔的当量圆直径的平均值在此范围,则即使膜3的表面曝露在等离子体中,膜3的内部露出,也能够抑制从闭口气孔的轮廓和内部发生的微粒的个数。
另外,膜3中,也可以是闭口气孔的当量圆直径的变异系数为2以下。若闭口气孔的当量圆直径的变异系数在此范围,则异常大的闭口气孔几乎不存在,因此,即使膜3的表面曝露于等离子体,膜3的内部露出,也能够抑制异常大的微粒从闭口气孔的轮廓和内部发生。
特别是闭口气孔的当量圆直径的变异系数为1以下即可。
在此,膜3的闭口气孔的面积占有率、当量圆直径的平均值和当量圆直径的变异系数,是使用平均粒径为1μm以上且5μm以下金刚石磨粒,在由锡构成的磨盘上,研磨至处于膜3厚度的40%以上且60%以下的位置,以此面作为测定面。而后,使用数字显微镜(キーエンス(株)制,VHX-5000),将落射照明设定为同轴落射,将照明的强度设定为255,使相当于物镜的ZS20透镜为100倍。接着,在面积为7.223mm2(横向的长度为3.1mm,纵向的长度为2.33mm)的范围,以自动面积计测模式选择亮度,提取出暗的区域(相当于闭口气孔的区域)后,将阈值设定为例如-20而进行测量,由此能够计算膜3的闭口气孔的面积占有率、当量圆直径的平均值和当量圆直径的变异系数。但是,根据暗的区域的明度而适宜设定阈值即可。如前述以膜的中心部作为测量面,是因其为膜3的闭口气孔的代表值,所以优选。
另外,膜3中,通过X射线衍射而得到的氧化钇的(222)面的衍射峰的半峰宽(FWHM:Full Width at Half Maximum)为0.25°以下。即,因为结晶性高,残余应力小,所以膜3发生裂纹和龟裂的可能性少。还有,半峰宽的值只规定上限,而半峰宽为0这样的情况不可能发生,当然也就不包括0。另外,半峰宽优选为0.05°以上。
构成本发明的等离子体处理装置用构件1的膜3,由于闭口气孔的面积占有率为0.2面积%以下,并且,通过X射线衍射而得到的氧化钇的(222)面的衍射峰的半峰宽为0.25°以下,所以为致密质,并且残余应力小,因此对于等离子体的耐腐蚀性优异。
构成本发明的等离子体处理装置用构件1的膜3,膜的厚度为5μm以上且200μm以下。另外,膜3的显微维氏硬度Hmv为7.5GPa以上,硬度非常高。例如,以等离子体热喷涂法形成的膜中,闭口气孔为10~20%左右。因此,等离子体热喷涂膜的显微维氏硬度Hmv为4.4GPa左右。还有,显微维氏硬度Hmv的测量方法,依据JIS R 1610(2003)进行。另外,测量使用MATSUZAWA制自动显微硬度试验系统AMT-X7FS,以试验载荷0.4903N(50gf),保持力15秒进行。另外,优选使用在经过镜面加工的基材表面上设有膜3的试样。
特别是如果半峰宽为0.13°以下,则由于更高的结晶性,耐腐蚀性得到提高。
另外,构成本发明的等离子体处理装置用构件1的膜3,也可以是氧化钇的(222)面的衍射峰向低角度侧的位移量为0.3°以下。氧化钇的(222)面的衍射峰向低角度侧的位移量在此范围时,氧化钇的结晶的晶格面间距的扩展受到抑制,因此膜3的内部的残余应力进一步变小,从基材2剥离的可能性变小。
氧化钇的(222)面的衍射峰的半峰宽和向低角度侧的位移量,能够使用X射线衍射装置测量。
接下来,对于本发明的等离子体处理装置用构件1的制造方法进行说明。
首先,对于基材2的制造方法进行说明。
准备平均粒径为0.4~0.6μm的氧化铝(Al2O3)A粉末和平均粒径为1.2~1.8μm左右的氧化铝B粉末。另外,准备氧化硅(SiO2)粉末、碳酸钙(CaCO3)粉末。还有,氧化硅粉末准备的是平均粒径为0.5μm以下的微粉。另外,为了得到含Mg的氧化铝质陶瓷,使用氢氧化镁粉末。还有,在以下的记载中,将氧化铝A粉末和氧化铝B粉末以外的粉末统称为第一副成分粉末。
然后,分别以规定量称量第一副成分粉末。接着,以如下方式进行称量,作为氧化铝调合粉末:使氧化铝A粉末与氧化铝B粉末达成质量比率40:60~60:40,另外,在构成所得到的氧化铝质陶瓷的成分100质量%之中,使Al换算成Al2O3的含量为99.4质量%以上。另外,关于第一副成分粉末,适宜的是以如下方式进行称量:首先把握氧化铝调合粉末中的Na量,由作为氧化铝质陶瓷时的Na量换算成Na2O,使该换算值与构成第一副成分粉末的成分(在此例中为Si和Ca等)换算成氧化物的值的比为1.1以下。
而后,将氧化铝调合粉末、第一副成分粉末、相对于氧化铝调合粉末和第一副成分粉末的合计100质量份为1~1.5质量份的PVA(聚乙烯醇)等的粘合剂、100质量份的溶剂和0.1~0.55质量份的分散剂放入搅拌装置加以混合、搅拌而得到浆料。
之后,对浆料进行喷雾造粒而得到颗粒后,通过粉末挤压成形装置、等静压成形装置等将此颗粒成形为规定形状,根据需要实施切削加工而得到基板状的成形体。
接着,使烧成温度为1500℃以上且1700℃以下,保持时间为4小时以上且6小时以下而进行烧成后,用平均粒径为1μm以上且5μm以下金刚石磨粒和由锡构成磨盘,对于形成膜的一侧的表面进行研磨,由此能够得到基材2。
而后,为了得到膜3的闭口气孔率为0.2面积%以下的等离子体处理装置用构件,使形成膜3的基材2的上表面2a的开口气孔率为8面积%以下即可。
在此,为了使上表面2a的开口气孔率为0.1%以下,使用平均粒径为1μm以上且3μm以下金刚石磨粒和由锡构成的磨盘,对于形成膜的一侧的表面进行研磨即可。
上表面2a的开口气孔率,使用数字显微镜(キーエンス(株)制,VHX-5000),运用与上述方法相同的方法求得即可。
接下来,对于膜3的形成方法,用图2进行说明。图2是表示溅射装置10的示意图,溅射装置10具备:腔室4;与腔室4内相连的气体供给源8;位于腔室4内的阳极5和阴极7;还有连接于阴极7侧的靶6。
作为膜3的形成方法,是将经由上述方法得到的基材2设置于腔室4内的阳极5侧。另外,在腔室4内的相反侧,将以稀土元素为主成分的靶,这里是以金属钇为主成分的靶6设置于阴极7侧。在此状态下,通过排气泵使腔室4内处于减压状态,从气体供给源8供给氩和氧作为气体G。
然后,一边将压力控制在0.3Pa±0.1Pa的范围,一边由电源向阳极5与阴极7之间施加电场,使等离子体P发生而进行溅射,由此在基材2的表面形成金属钇膜。还有,1次形成的厚度为0.5nm以下。为了使半峰宽达到0.13°以下,使1次形成的厚度处于0.3nm以下即可。为了使衍射峰向低角度侧的位移量为0.3°以下,将基材2的温度控制在常温~200℃即可。通过减小1次形成的厚度,能够抑制闭口气孔形成。
接着,进行金属钇膜的氧化工序。然后,以使膜3的厚度的合计为5μm以上且200μm以下的方式,交替进行金属钇膜的形成和氧化工序而进行层叠,由此能够得到本发明的等离子体处理装置用构件。还有,从电源投入的电功率,无论是高频功率和直流功率均可。另外,膜3的厚度优选为10μm以上。通过增厚膜厚,能够使耐久性提高。
所谓本发明的等离子体处理装置用构件,是曝露在等离子体中的构件即可,例如,使用于使等离子体发生的高频透过的高频透过用窗构件、用于分配等离子体生成用气体的簇射板、用于载置半导体晶片的基座等。
接着,对于本发明的等离子体处理装置进行说明。本发明的等离子体处理装置,由于具备本发明的等离子体处理装置用构件,所以借助优异的耐腐蚀性,能够长期维持优异的品质,因此具有高可靠性。另外,因为等离子体处理装置用构件的寿命长,成以生产率提高。
以下,参照附图,对于本发明其他的实施方式的等离子体处理装置用构件详细说明。
本发明的等离子体处理装置用构件11,如图3所示,具备基材12和在基材12的至少一部分上稀土元素的氧化物的膜13。于是,在图3中显示以膜13被覆基材12的一个上表面12a的例子。还有,在图3中,为了明确膜13的存在而示意性地表示,并非忠实展表基材12和膜13的厚度。
并且,膜13是稀土类元素的氧化物,作为稀土类元素,可列举钇(Y)、铈(Ce)、钐(Sm)、钆(Gd)、镝(Dy)、铒(Er)和镱(Yb)等。在此,稀土类元素是钇时,因为耐腐蚀性优异,也比其他的稀土类元素更廉价,所以性价比高。
还有,膜13并非是不包含稀土类元素的氧化物以外的成分,根据用于膜13形成时的靶的纯度和装置构成等,除了稀土类元素以外,也有包含如下成分的情况:氟(F)、钠(Na)、镁(Mg)、铝(Al)、硅(Si)、磷(P)、硫(S)、氯(Cl)、钾(K)、钙(Ca)、钛(Ti)、铬(Cr)、锰(Mn)、铁(Fe)、钴(Co)、镍(Ni)、铜(Cu)、锌(Zn)、锶(Sr)等。
而且,膜13的厚度的变异系数为0.04以下。满足这样构成的本发明的等离子体处理装置用构件11,与厚度的变异系数超出此范围的构件相比,能够更长期地使用。
在此,所谓变异系数,如果使用图3所述的符号说明,就是在与形成有膜13的基材12的上表面12a垂直的截面中,在多个位置测量从上表面12a至膜13的表面的厚度,用所得到的值的标准偏差除以平均值的结果。
膜13的厚度的偏斜度的绝对值也可以为1以下。
若厚度的偏斜度的绝对值在此范围,则厚度的分布为正态分布或接近于正态分布的分布,局部性的高应力难以残留,因此,即使长期反复曝露在等离子体下,也能够降低膜13剥离的风险。
特别是膜13的厚度的偏斜度优选为0以上且1以下。
在此,所谓偏斜度,就是分布从正态分布偏斜了多少,即,表示分布的左右对称性的指标(统计量),偏斜度Sk>0时,分布的尾偏向右侧,偏斜度Sk=0时,分布为左右对称,偏斜度Sk<0时,分布的尾偏向左侧。
还有,厚度的偏斜度,使用Excel(注册商标,Microsoft Corporation)所具备的函数SKEW求得即可。
关于测量,更具体地说,就是使用干涉光谱仪,使折射率为1.92而进行测量。还有,对于作为对象的观察区域,例如,横向和纵向的长度均为50mm这一范围的区域,以没有偏移的方式至少测量20处以上。
还有,厚度的变异系数为0.04以下的本发明的等离子体处理装置用构件1,膜13的表面的粗糙度曲线的最大高度Rz为6μm以下。在此,所谓膜13的表面的糙度曲线的最大高度Rz,能够依据JIS B 0601-2001,用激光显微镜((株)キーエンス制,超景深彩色3D形状测量显微镜(VK-9500或其后续机型))进行测量。作为测量条件,使倍率为1000倍(目镜:20倍,物镜:50倍),使测量模式为彩色超景深,高度方向的测量分辨率(间距)为0.05μm,光学变焦为1.0倍,增益为953,ND滤光片为0,测量范围为278μm×210μm,截止值λs为2.5μm,截止值λc为0.08mm。另外,在数值的计算时,使n数为5以上,将所得到的值的平均值作为膜13的表面的糙度曲线的最大高度Rz。
另外,本发明的等离子体处理装置用构件11的膜13,作为厚度,为5μm以上且200μm以下。另外,膜13的显微维氏硬度Hmv为7.5GPa以上。显微维氏硬度Hmv的测量方法,依据JISR 1610(2003)进行。另外,测量使用MATSUZAWA制自动显微硬度试验系统AMT-X7FS,以试验载荷0.4903N(50gf),保持力15秒进行。另外,优选使用在经过镜面加工的基材表面上设有膜13的试样。
在膜13中,特别是如果厚度的变异系数为0.025以下,则相同平均厚度下的等离子体处理装置用构件11的寿命延长,因此具有高性价比。
另外,膜13中,也可以是闭口气孔的面积占有率为0.2面积%以下。所谓闭口气孔的面积占有率为0.2面积%以下,就是指致密的膜,也可以说是腐蚀以闭口气孔为起点而进展的情况少的膜。还有,所谓闭口气孔的面积占有率为0.2面积%以下,是与经由等离子体热喷涂法、悬浮液热喷涂法、气溶胶沉积(AD)法所得到的膜相比小的值。因为这些成膜方法以粉末为原料,所以闭口气孔的面积率容易变大。例如,由等离子体热喷涂法形成的膜,其闭口气孔为10~20%左右。因此,等离子体热喷涂膜的显微维氏硬度Hmv为4.4GPa左右。
另外,膜13中,也可以是闭口气孔的当量圆直径的平均值为8μm以下。若闭口气孔的当量圆直径的平均值在此范围,则即使膜13的表面曝露于等离子体下,膜13的内部露出,也能够抑制从闭口气孔的轮廓和内部发生的微粒的个数。
另外,膜13中,也可以是闭口气孔的当量圆直径的变异系数为2以下。若闭口气孔的当量圆直径的变异系数在此范围,则异常大的闭口气孔几乎不存在,因此,即使膜13的表面曝露在等离子体,膜13的内部露出,也能够抑制异常大的微粒从闭口气孔的轮廓和内部发生。
特别是闭口气孔的当量圆直径的变异系数可以为1以下。
在此,膜13的闭口气孔的面积占有率、当量圆直径的平均值和当量圆直径的变异系数,是使用平均粒径为1μm以上且5μm以下金刚石磨粒,在由锡构成的磨盘上,研磨到膜13的厚度的40%以上且60%以下的位置,将此面作为测量面。而后,使用数字显微镜(キーエンス(株)制,VHX-5000),使落射照明设定为同轴落射,将照明的强度设定为255,使相当于物镜的ZS20透镜为100倍。接着,在面积为7.223mm 2(横向的长度为3.1mm,纵向的长度为2.33mm)的范围,以自动面积计测模式选择亮度提取出暗的区域(相当于闭口气孔的区域)后,将阈值设定为例如-20而进行测量,由此能够计算膜13的闭口气孔的面积占有率、当量圆直径的平均值和当量圆直径的变异系数。但是,根据暗的区域的明度面而适之且设定阈值即可。如前述以膜的中心部为测量面,是因其为膜13的闭口气孔的代表值,所以优选。
膜13的厚度优选为5μm以上。另外,膜13的厚度也可以为15μm以上。膜13的厚度的变异系数为0.04以下,此外膜13的厚度为15μm以上时,在曝露于等离子体的环境下,能够耐受长期的使用。
此外,膜13的厚度的变异系数为0.04以下,膜13的闭口气孔的面积占有率为0.2面积%以下,膜13的厚度为15μm以上时,能够耐受更长期的使用。
其次,基材12,可列举例如石英、纯度99.999%(5N)以上的铝、铝6061合金等的铝合金、氮化铝质陶瓷、氧化铝质陶瓷等。所谓氮化铝质陶瓷和氧化铝质陶瓷,例如,如果是氧化铝质陶瓷,则是构成基材12的成分的合计100质量%之中,作为将Al换算成Al2O3的值的氧化铝的含量为90质量%以上的陶瓷。还有,氧化铝质陶瓷,除了含氧化铝以外,还存在含有氧化镁、氧化钙和氧化硅等的情况。
在此,分别构成基材12和膜13的成分,能够通过使用了CuKα射线的X射线衍射装置进行确定,各成分的含量,例如能够通过如下方式求得:将经由ICP(Inductively CoupledPlasma)发光分光分析装置或X射线荧光分析装置而求得的各元素的含量换算成氧化物而求得。
接下来,对于本发明的等离子体处理装置用构件11的制造方法进行说明。
首先,对于基材12的制造方法进行说明。
准备平均粒径为0.4~0.6μm的氧化铝(Al2O3)A粉末和平均粒径为1.2~1.8μm左右的氧化铝B粉末。另外,准备氧化硅(SiO2)粉末、碳酸钙(CaCO3)粉末。还有,氧化硅粉末准备的是平均粒径为0.5μm以下的微粉。另外,为了得到含Mg的氧化铝质陶瓷,使用氢氧化镁粉末。还有,以下的记载中,将氧化铝A粉末和氧化铝B粉末以外的粉末统称为第一副成分粉末。
然后,分别以规定量称量第一副成分粉末。接着,以如下方式进行称量,作为氧化铝调合粉末:使氧化铝A粉末与氧化铝B粉末达到质量比率为40:60~60:40,另外,构成所得到的氧化铝质陶瓷的成分100质量%之中,使Al换算成Al2O3的含量为99.4质量%以上。另外,关于第一副成分粉末,适宜的是以如下方式进行称量:首先把握氧化铝调合粉末中的Na量,由作为氧化铝质陶瓷时的Na量换算成Na2O,使该换算值与构成第一副成分粉末的成分(在该例中为Si和Ca等)换算成氧化物的值的比为1.1以下。
而后,将氧化铝调合粉末、第一副成分粉末、相对于氧化铝调合粉末和第一副成分粉末的合计100质量份为1~1.5质量份的PVA(聚乙烯醇)等的粘合剂、100质量份的溶剂和0.1~0.55质量份的分散剂投入搅拌装置进行混合、搅拌而得到浆料。
之后,对浆料进行喷雾造粒而得到颗粒后,通过粉末挤压成形装置、等静压成形装置等将此颗粒成形为规定形状,根据需要实施切削加工而得到基板状的成形体。
接着,使烧成温度为1500℃以上且1700℃以下,保持时间为4小时以上且6小时以下而进行烧成后,用平均粒径为1μm以上且5μm以下金刚石磨粒和由锡构成的磨盘,对于形成膜的一侧的表面进行研磨,由此能够得到基材12。
接着,关于膜13的形成方法,使用图4进行说明。图4是表示溅射装置10的示意图,溅射装置20具备:腔室14;与腔室14内相连的气体供给源18;位于腔室14内的阳极15和阴极17;还有连接于阴极17侧的靶16。
作为膜13的形成方法,将经由上述方法得到的基材12设置于腔室14内的阳极15侧。另外,在腔室14内的相反侧,将以稀土元素为主成分的靶,这里是以金属钇为主成分的靶16设置于阴极17侧。在此状态下,通过排气泵使腔室14内处于减压状态,从气体供给源8供给氩和氧作为气体G。
然后,一边将压力控制在0.3Pa±0.1Pa的范围,一边由电源在阳极15与阴极17之间施加电场,使等离子体P发生进行溅射,由此在基材12的表面上形成金属钇膜。还有,1次形成的厚度为亚纳米。接着,进行金属钇膜的氧化工序。然后,以使膜13的厚度的合计为10μm以上且200μm以下的方式,交替进行金属钇膜的形成和氧化工序而进行层叠,由此能够得到本发明的等离子体处理装置用构件。还有,从电源投入的电功率,是高频电功率和直流电功率均可。
所谓本发明的等离子体处理装置用构件,是曝露在等离子体中的构件即可,例如,使用于使等离子体发生的高频透过的高频透过用窗构件、用于分配等离子体生成用气体的簇射板、用于载置半导体晶片的基座等。
接着,对于本发明的等离子体处理装置进行说明。本发明的等离子体处理装置,由于具备本发明的等离子体处理装置用构件,所以因膜的厚度薄的部分的基材露出而招致品质降低的风险小,能够维持制品的品质。另外,发生突发性的等离子体处理装置用构件更换的情况少,因此生产效率的降低少。另外,等离子体处理装置用构件的更换时期的波动度小,能够预测更换时期,容易编制更换预案,因此结果是生产效率提高。
本发明能够在不脱离其精神或主要特征的前提下,以其他各种方式实施。因此,前述的实施方式全部的点不过只是例示,本发明的范围公开在权利要求的范围,不受说明书本文任何约束。此外,属于权利要求的范围的变形和变更全部包括在本发明的范围内。譬如,由本发明的实施方式的组合而产生的发明也在本发明的范围内。
符号说明
1、11:等离子体处理装置用构件
2、12:基材
3、13:膜
4、14:腔室
5、15:阳极
6、16:靶
7、17:阴极
8、18:气体供给源
10、20:溅射装置
Claims (6)
1.一种等离子体处理装置用构件,其具备基材和在该基材的至少一部分上以氧化钇为主成分的膜,
该膜中,闭口气孔的面积占有率为0.2面积%以下,由X射线衍射得到的氧化钇的(222)面中的衍射峰的半峰宽为0.25°以下。
2.根据权利要求1所述的等离子体处理装置用构件,其中,所述膜中,所述闭口气孔的当量圆直径的平均值为8μm以下。
3.根据权利要求1或权利要求2所述的等离子体处理装置用构件,其中,所述膜中,所述闭口气孔的当量圆直径的变异系数为2以下。
4.根据权利要求1至权利要求3中任一项所述的等离子体处理装置用构件,其中,所述膜中,所述半峰宽为0.13°以下。
5.根据权利要求1至权利要求4中任一项所述的等离子体处理装置用构件,其中,所述膜中,所述氧化钇的(222)面中的衍射峰向低角度侧的位移量在0.3°以下。
6.一种等离子体处理装置,其具备权利要求1至权利要求5中任一项所述的等离子体处理装置用构件。
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US20200402771A1 (en) | 2020-12-24 |
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EP3754047A4 (en) | 2022-04-13 |
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TW201937992A (zh) | 2019-09-16 |
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TW201934790A (zh) | 2019-09-01 |
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EP3754047A1 (en) | 2020-12-23 |
JPWO2019160121A1 (ja) | 2021-02-04 |
EP3754046A1 (en) | 2020-12-23 |
KR102430751B1 (ko) | 2022-08-09 |
KR20200106529A (ko) | 2020-09-14 |
EP3754047B1 (en) | 2024-01-31 |
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CN111712586A (zh) | 2020-09-25 |
KR102430752B1 (ko) | 2022-08-09 |
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