CN111656283A - 模板制备方法 - Google Patents
模板制备方法 Download PDFInfo
- Publication number
- CN111656283A CN111656283A CN201980000008.9A CN201980000008A CN111656283A CN 111656283 A CN111656283 A CN 111656283A CN 201980000008 A CN201980000008 A CN 201980000008A CN 111656283 A CN111656283 A CN 111656283A
- Authority
- CN
- China
- Prior art keywords
- pattern
- substrate
- photoresist
- layer
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 78
- 238000000059 patterning Methods 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims description 57
- 238000005498 polishing Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 239000002390 adhesive tape Substances 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 2
- 238000001312 dry etching Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- -1 Polyoxymethylene Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
一种模板制备方法,包括:提供基底(100);在基底(100)上形成光刻胶图案(200);以光刻胶图案(200)为掩模构图基底(100),且形成光刻胶图案(200)包括:在基底(100)上形成间隔排布的多个第一图案(210);在多个第一图案(210)上形成第一材料层(300);利用第一材料层(300)为掩模构图至少一个第一图案(210),使得第一图案(210)形成为至少一个第一子图案(211);以及去除第一材料层(300);其中,在垂直于基底(100)所在面的方向上,第一材料层(300)至少覆盖至少一个第一图案(210)的一侧。上述方法可以提高模板的精细度。
Description
PCT国内申请,说明书已公开。
Claims (17)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/070246 WO2020140234A1 (zh) | 2019-01-03 | 2019-01-03 | 模板制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111656283A true CN111656283A (zh) | 2020-09-11 |
CN111656283B CN111656283B (zh) | 2021-09-14 |
Family
ID=71406645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980000008.9A Active CN111656283B (zh) | 2019-01-03 | 2019-01-03 | 模板制备方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11467487B2 (zh) |
EP (1) | EP3907562B1 (zh) |
CN (1) | CN111656283B (zh) |
WO (1) | WO2020140234A1 (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101373328A (zh) * | 2007-08-20 | 2009-02-25 | 东部高科股份有限公司 | 精细掩模及使用精细掩模形成掩模图案的方法 |
CN102446712A (zh) * | 2011-09-08 | 2012-05-09 | 上海华力微电子有限公司 | 一种增加两次图形曝光工艺窗口的方法 |
CN102683191A (zh) * | 2011-03-17 | 2012-09-19 | 中芯国际集成电路制造(上海)有限公司 | 形成栅极图案的方法以及半导体装置 |
US20140035151A1 (en) * | 2012-08-06 | 2014-02-06 | Globalfoundries Inc. | Integrated circuits and methods for fabricating integrated circuits using double patterning processes |
CN104157564A (zh) * | 2013-05-15 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | 改善刻蚀后关键尺寸均匀性的方法 |
CN105489480A (zh) * | 2014-09-16 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | 采用双重图形化技术形成栅极的方法 |
EP3010033A1 (en) * | 2014-10-16 | 2016-04-20 | Tokyo Electron Limited | Euv resist etch durability improvement and pattern collapse mitigation |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59174804A (ja) * | 1983-03-24 | 1984-10-03 | Dainippon Printing Co Ltd | 回折格子の作製方法 |
JPS60191209A (ja) * | 1984-03-12 | 1985-09-28 | Nec Corp | 回折格子の製造方法 |
JPS61278587A (ja) * | 1985-06-04 | 1986-12-09 | Fujimi Kenmazai Kogyo Kk | 研磨用組成物 |
JPS62166520A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 微細パタ−ンのパタ−ニング法 |
JPH02219001A (ja) * | 1989-02-20 | 1990-08-31 | Nippon Sheet Glass Co Ltd | 回折格子の製造方法 |
US5021649A (en) * | 1989-03-28 | 1991-06-04 | Canon Kabushiki Kaisha | Relief diffraction grating encoder |
US5142385A (en) * | 1989-07-18 | 1992-08-25 | Massachusetts Institute Of Technology | Holographic lithography |
JPH03270227A (ja) * | 1990-03-20 | 1991-12-02 | Mitsubishi Electric Corp | 微細パターンの形成方法 |
US5744219A (en) * | 1991-01-28 | 1998-04-28 | Dai Nippon Printing Co., Ltd. | Transfer foil having reflecting layer with surface relief pattern recorded thereon |
JPH0643312A (ja) * | 1992-07-24 | 1994-02-18 | Mitsubishi Electric Corp | 回折格子の製造方法 |
JPH10178238A (ja) * | 1996-12-18 | 1998-06-30 | Alps Electric Co Ltd | 半導体レーザの製造方法 |
KR100481651B1 (ko) * | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
JP2002170289A (ja) * | 2000-12-01 | 2002-06-14 | Ricoh Co Ltd | 光情報記録媒体用スタンパの製造方法 |
JP3828402B2 (ja) * | 2001-11-08 | 2006-10-04 | 株式会社日立製作所 | 背面照明装置およびこれを用いた液晶表示装置並びに液晶表示装置の照明方法 |
TWI241626B (en) * | 2003-06-02 | 2005-10-11 | Toshiba Corp | Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device |
KR100575618B1 (ko) * | 2003-10-07 | 2006-05-03 | 매그나칩 반도체 유한회사 | 구리막의 연마 방법 및 이를 이용한 구리막 배선의 형성방법 |
JP4508708B2 (ja) * | 2004-04-12 | 2010-07-21 | キヤノン株式会社 | Euv光を用いた露光装置および露光方法 |
JP2006147701A (ja) * | 2004-11-17 | 2006-06-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
US7220167B2 (en) * | 2005-01-11 | 2007-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | Gentle chemical mechanical polishing (CMP) liftoff process |
JP2006318969A (ja) * | 2005-05-10 | 2006-11-24 | Nikon Corp | 微細構造の製造方法、及び半導体デバイスの製造方法 |
US7864424B2 (en) * | 2006-05-31 | 2011-01-04 | CSEM Centre Suisse d'Electronique et de Microtechnique SA-Recherche et Développement | Zero order pigments (ZOP) |
US7906275B2 (en) * | 2006-08-31 | 2011-03-15 | Stc.Unm | Self-aligned spatial frequency doubling |
KR20090069770A (ko) * | 2007-12-26 | 2009-07-01 | 주식회사 하이닉스반도체 | 미세 콘택홀을 갖는 상변화 메모리 소자의 제조방법 |
NL1036459A1 (nl) * | 2008-02-13 | 2009-08-14 | Asml Netherlands Bv | Method and apparatus for angular-resolved spectroscopic lithography characterization. |
JP2011192906A (ja) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | レジストパターンの形成方法および微細構造体の製造方法 |
US8852848B2 (en) | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
US8901016B2 (en) | 2010-12-28 | 2014-12-02 | Asm Japan K.K. | Method of forming metal oxide hardmask |
CN103999191B (zh) * | 2011-12-15 | 2016-10-19 | 英特尔公司 | 用于单次曝光-自对准的双重、三重以及四重图案化的方法 |
SG11201500992TA (en) * | 2012-08-10 | 2015-03-30 | Temasek Polytechnic | Optical grating |
CN202735675U (zh) * | 2012-09-07 | 2013-02-13 | 京东方科技集团股份有限公司 | 一种掩膜板 |
US20140234466A1 (en) * | 2013-02-21 | 2014-08-21 | HGST Netherlands B.V. | Imprint mold and method for making using sidewall spacer line doubling |
GB201307312D0 (en) * | 2013-04-23 | 2013-05-29 | Element Six Ltd | Synthetic diamond optical elements |
CN103235482A (zh) * | 2013-04-28 | 2013-08-07 | 苏州大学 | 基于pdms的功能性高分子图案化方法 |
US20150024597A1 (en) | 2013-07-16 | 2015-01-22 | HGST Netherlands B.V. | Method for sidewall spacer line doubling using polymer brush material as a sacrificial layer |
US10465096B2 (en) * | 2017-08-24 | 2019-11-05 | Versum Materials Us, Llc | Metal chemical mechanical planarization (CMP) composition and methods therefore |
US10690831B2 (en) * | 2018-11-20 | 2020-06-23 | Facebook Technologies, Llc | Anisotropically formed diffraction grating device |
-
2019
- 2019-01-03 EP EP19907921.1A patent/EP3907562B1/en active Active
- 2019-01-03 CN CN201980000008.9A patent/CN111656283B/zh active Active
- 2019-01-03 WO PCT/CN2019/070246 patent/WO2020140234A1/zh unknown
- 2019-01-03 US US16/632,041 patent/US11467487B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101373328A (zh) * | 2007-08-20 | 2009-02-25 | 东部高科股份有限公司 | 精细掩模及使用精细掩模形成掩模图案的方法 |
CN102683191A (zh) * | 2011-03-17 | 2012-09-19 | 中芯国际集成电路制造(上海)有限公司 | 形成栅极图案的方法以及半导体装置 |
CN102446712A (zh) * | 2011-09-08 | 2012-05-09 | 上海华力微电子有限公司 | 一种增加两次图形曝光工艺窗口的方法 |
US20140035151A1 (en) * | 2012-08-06 | 2014-02-06 | Globalfoundries Inc. | Integrated circuits and methods for fabricating integrated circuits using double patterning processes |
CN104157564A (zh) * | 2013-05-15 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | 改善刻蚀后关键尺寸均匀性的方法 |
CN105489480A (zh) * | 2014-09-16 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | 采用双重图形化技术形成栅极的方法 |
EP3010033A1 (en) * | 2014-10-16 | 2016-04-20 | Tokyo Electron Limited | Euv resist etch durability improvement and pattern collapse mitigation |
Also Published As
Publication number | Publication date |
---|---|
US11467487B2 (en) | 2022-10-11 |
EP3907562B1 (en) | 2024-05-15 |
CN111656283B (zh) | 2021-09-14 |
WO2020140234A1 (zh) | 2020-07-09 |
EP3907562A1 (en) | 2021-11-10 |
US20210223685A1 (en) | 2021-07-22 |
EP3907562A4 (en) | 2022-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8956962B2 (en) | Method for fabricating large-area nanoscale pattern | |
CN108666207A (zh) | 制作半导体元件的方法 | |
US20180164680A1 (en) | Template and method of manufacturing semiconductor device | |
CN110891895B (zh) | 通过选择性模板移除来进行微米和纳米制造的方法 | |
CN111656283B (zh) | 模板制备方法 | |
JP6115245B2 (ja) | ナノインプリント用テンプレートおよびその製造方法 | |
KR20200004442A (ko) | 유체 어셈블리 기판 및 그 제조방법 | |
CN105502281A (zh) | 一种金属图形化方法 | |
KR100712336B1 (ko) | 프리즘의 제조방법 | |
CN108415219B (zh) | 功能膜层图形、显示基板及其制作方法、显示装置 | |
JP6089451B2 (ja) | ナノインプリントモールドおよびその製造方法 | |
JP2013182962A (ja) | テンプレートの製造方法 | |
JP6015140B2 (ja) | ナノインプリントモールドおよびその製造方法 | |
JP6776757B2 (ja) | 多段構造体を有するテンプレートの製造方法 | |
JP2003140366A (ja) | アライメントマーク作製方法 | |
US20210129139A1 (en) | Patterning method of film, microfluidic device and manufacturing method thereof | |
JP6156013B2 (ja) | インプリントモールドの製造方法 | |
JP7302347B2 (ja) | インプリントモールド用基板及びインプリントモールド、並びにそれらの製造方法 | |
JP7338308B2 (ja) | インプリントモールド用基板及びインプリントモールド、並びにそれらの製造方法 | |
CN112466803B (zh) | 半导体器件的制作方法 | |
CN112462468B (zh) | 利用图形反转制作光子晶体的方法及光子晶体 | |
WO2014061652A1 (ja) | パターン構造体の形成方法 | |
CN109411330B (zh) | 一种半导体基板的斜面图形化方法 | |
TWI336904B (en) | Method for forming ring pattern | |
CN115603687A (zh) | 一种声表面波滤波器中叉指换能器的电极图纹制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |