CN111471400A - 用于抛光介电衬底的具有稳定的磨料颗粒的化学机械抛光组合物 - Google Patents
用于抛光介电衬底的具有稳定的磨料颗粒的化学机械抛光组合物 Download PDFInfo
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- CN111471400A CN111471400A CN202010078522.9A CN202010078522A CN111471400A CN 111471400 A CN111471400 A CN 111471400A CN 202010078522 A CN202010078522 A CN 202010078522A CN 111471400 A CN111471400 A CN 111471400A
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- 238000005498 polishing Methods 0.000 title claims abstract description 95
- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 239000002245 particle Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 239000000126 substance Substances 0.000 title claims description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000008119 colloidal silica Substances 0.000 claims abstract description 30
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 17
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 13
- -1 polyethyleneoxy Polymers 0.000 claims description 13
- 229910052783 alkali metal Inorganic materials 0.000 claims description 12
- 150000001340 alkali metals Chemical class 0.000 claims description 12
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000003002 pH adjusting agent Substances 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 7
- 239000003139 biocide Substances 0.000 claims description 6
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 6
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 6
- 230000003115 biocidal effect Effects 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 4
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 150000001282 organosilanes Chemical class 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 2
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000001226 triphosphate Substances 0.000 description 1
- 235000011178 triphosphate Nutrition 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Microelectronics & Electronic Packaging (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
公开了一种用于抛光介电衬底的化学机械抛光组合物,其包含用聚烷氧基化的有机硅烷稳定的胶体二氧化硅磨料颗粒。
Description
技术领域
本发明涉及用于抛光介电衬底的在碱性pH下具有稳定的胶体二氧化硅磨料颗粒的化学机械抛光组合物。更具体地,本发明涉及在碱性pH下具有稳定的胶体二氧化硅磨料颗粒的化学机械抛光组合物,其中所述稳定的胶体二氧化硅磨料颗粒用聚烷氧基化的有机硅烷稳定。
背景技术
在集成电路以及其他电子装置的制造中,将多层导电材料、半导电材料以及介电材料沉积在半导体晶片的表面上或从半导体晶片的表面上移除。可以通过多种沉积技术来沉积导电材料、半导电材料以及介电材料的薄层。在现代加工中常见的沉积技术包括物理气相沉积(PVD)(也称为溅射)、化学气相沉积(CVD)、等离子体增强的化学气相沉积(PECVD)、以及电化学电镀(ECP)。
随着材料层被依次地沉积和移除,晶片的最上表面变成非平面的。因为后续的半导体加工(例如金属化)要求晶片具有平坦的表面,所以需要对晶片进行平坦化。平坦化在移除不希望的表面形貌和表面缺陷中是有用的。
化学机械平坦化、或化学机械抛光(CMP)是用于将衬底(诸如半导体晶片)平坦化的常见技术。在常规的CMP中,晶片被安装在托架组件上并且被定位成与CMP设备中的抛光垫接触。托架组件向晶片提供可控的压力,从而将晶片压靠在抛光垫上。所述垫通过外部驱动力相对于晶片移动(例如旋转)。与此同时,在晶片与抛光垫之间提供抛光组合物(“浆料”)或其他抛光液。因此,通过垫表面和浆料的化学和机械作用将晶片表面抛光并且使其成为平面。
某些先进装置设计要求在较低的使用点(POU)磨料wt%下提供增强的中间层介电(ILD)移除效率的碱性抛光组合物。此类ILD包括氧化硅和氮化硅。一种方法是增加电解质浓度,从而增加电导率;然而,增加电解质浓度导致胶体二氧化硅磨料颗粒的不稳定性。增加离子浓度导致胶体二氧化硅磨料颗粒上的较少的表面电荷,并致使较小的颗粒排斥,这是稳定颗粒的主要力。
因此,需要在碱性pH下展现出改进的胶体二氧化硅磨料颗粒的稳定性的抛光组合物和抛光方法。
发明内容
本发明涉及一种化学机械抛光组合物,其包含以下项作为初始组分:
水;
胶体二氧化硅磨料颗粒;
具有式(I)的聚烷氧基有机硅烷:
其中R选自(C1-C4)烷基;R1选自由氢、(C1-C4)烷基和R2C(O)-组成的组,其中R2选自由氢和(C1-C4)烷基组成的组;并且n是1至12的整数;
pH>7;以及
任选地碱金属或铵的无机盐或其混合物;以及
任选地pH调节剂。
本发明还包括一种用于对衬底进行化学机械抛光的方法,所述方法包括:
提供衬底,其中所述衬底包括氧化硅、氮化硅和多晶硅中的至少一种;
提供化学机械抛光组合物,其包含以下项作为初始组分:
水;
胶体二氧化硅磨料颗粒;
具有式(I)的聚烷氧基有机硅烷:
其中R选自(C1-C4)烷基;R1选自由氢、(C1-C4)烷基和R2C(O)-组成的组,其中R2选自由氢和(C1-C4)烷基组成的组;并且n是1至12的整数;
pH>7;以及
任选地碱金属或铵的无机盐或其混合物;以及
任选地pH调节剂;
提供具有抛光表面的化学机械抛光垫;
用0.69至69kPa的下压力在所述化学机械抛光垫的抛光表面与所述衬底之间的界面处产生动态接触;以及
在所述化学机械抛光垫与所述衬底之间的界面处或界面附近将所述化学机械抛光组合物分配到所述化学机械抛光垫上;
其中所述衬底被抛光;并且其中,将所述氧化硅、氮化硅、多晶硅或其组合中的至少一些从所述衬底上移除。
本发明的化学机械抛光组合物的聚烷氧基有机硅烷化合物在碱性pH下使胶体二氧化硅磨料颗粒稳定,使得所述胶体二氧化硅磨料颗粒基本上不附聚。此种附聚被所述聚烷氧基有机硅烷化合物抑制,所述化合物共价地改性所述胶体二氧化硅磨料颗粒的表面以提供位阻保护。即使在相对高浓度的无机盐下也实现此种位阻保护。
具体实施方式
如本说明书通篇所使用的,除非上下文另外指示,否则以下缩写具有以下含义:℃=摄氏度;g=克;L=升;mL=毫升;kPa=千帕;cm=厘米;nm=纳米;min.=分钟;mS=毫西门子;wt%=重量百分比;PS=本发明的抛光浆料;PC=对比抛光浆料。
术语“化学机械抛光”或“CMP”是指单独地凭借化学和机械力来抛光衬底的工艺,并且其区别于其中向衬底施加电偏压的电化学-机械抛光(ECMP)。术语“TEOS”意指由原硅酸四乙酯(Si(OC2H5)4)分解而形成的氧化硅。在通篇说明书中,术语“组合物”和“浆料”可互换使用。术语“卤离子”意指氯离子、溴离子、氟离子和碘离子。术语“一个/种(a/an)”是指单数和复数二者。除非另外指出,否则所有百分比均为按重量计的。所有数值范围都是包含端值的,并且可按任何顺序组合,除了此数值范围被限制为加起来最高达100%是合乎逻辑的情况之外。
本发明的化学机械抛光组合物含有水;胶体二氧化硅磨料颗粒;以及具有式(I)的聚烷氧基有机硅烷化合物:
其中R选自(C1-C4)烷基,诸如甲基、乙基、丙基或丁基,优选地,R选自(C1-C3)烷基,诸如甲基、乙基或丙基,更优选地,R选自(C1-C2)烷基,诸如甲基或乙基,最优选地,R是甲基;R1选自由氢和(C1-C4)烷基(诸如甲基、乙基、丙基或丁基)和R2C(O)-组成的组,其中R2选自由氢和(C1-C4)烷基(诸如甲基、乙基、丙基或丁基)组成的组,优选地,R1选自由氢、(C1-C3)烷基(诸如甲基、乙基或丙基)和R2-C(O)-组成的组,其中R2选自(C1-C2)烷基(诸如甲基或乙基),更优选地,R1选自由氢、甲基和R2-C(O)-组成的组,其中R2是甲基,最优选地,R1是甲基;并且n是1至12的整数,优选地,n是6-12的整数,更优选地,n是6-9、8-12或9-12的整数,甚至更优选地,n是6-9或9-12的整数,最优选地,n是6-9。
优选地,在本发明的化学机械抛光组合物中,如以上描述的具有式(I)的聚烷氧基有机硅烷化合物包括乙氧基化的混合物,其中乙氧基化的数目由如以上的变量n指定,并且n是6-9、8-12或9-12,更优选地,n是6-9或9-12,最优选地,n是6-9个乙氧基化。本发明的示例性聚烷氧基有机硅烷如下:
2-[甲氧基(聚亚乙基氧基)6-9丙基]三甲氧基硅烷;
2-[甲氧基(聚亚乙基氧基)9-12丙基]三甲氧基硅烷;
[羟基(聚亚乙基氧基)8-12丙基]三乙氧基硅烷;以及
2-[(乙酰氧基(聚亚乙基氧基)丙基]三乙氧基硅烷。
本发明的化学机械抛光组合物含有0.001至5wt%、优选地0.01至1wt%、更优选地0.05至0.5wt%、最优选地0.05至0.25wt%的具有式(I)-(V)的聚烷氧基有机硅烷作为初始组分。
本发明的化学机械抛光组合物具有pH>7。优选地,本发明的化学机械抛光组合物具有8至12的pH,更优选地,本发明的化学机械抛光组合物具有8至11的pH,最优选地,本发明的化学机械抛光组合物具有9至11的pH。
任选地,可以根据需要将pH调节剂添加到本发明的化学机械抛光组合物中,以将化学机械抛光组合物的pH调节至>7。此类pH调节剂包括氢氧化钠、氢氧化钾、氨和季铵化合物中的一种或多种。
化学机械抛光组合物中含有的水优选地是去离子水和蒸馏水中的至少一种,以限制附带的杂质。
用于本发明的化学机械抛光组合物中的磨料是胶体二氧化硅。优选地,胶体二氧化硅磨料含有至少一种沉淀二氧化硅。优选地,所使用的胶体二氧化硅具有<200nm、更优选75至150nm、最优选100至150nm的平均粒度;并且占化学机械抛光组合物的0.1至40wt%、优选地5至25wt%、更优选地8至25wt%、最优选地15至25wt%。可商购的胶体二氧化硅的实例是具有139nm平均粒度的KlebosolTM II 1630胶体二氧化硅;具有145nm平均粒度的KlebosolTM II 1630胶体二氧化硅;以及具有130nm粒度的KlebosolTM II 1730胶体二氧化硅,所有都是由德国达姆施塔特默克集团(Merck KgAA)制造的,所有都是从陶氏化学公司(Dow Chemical Company)可获得的。优选地,胶体二氧化硅磨料颗粒具有负ζ电势。
任选地,化学机械抛光组合物包含一种或多种碱金属和铵的无机盐。优选地,无机盐的量是以0.01至2wt%、优选地0.1至1wt%、更优选地0.25至1wt%、最优选地0.5至1wt%的量包含在化学机械抛光组合物中,其中碱金属选自锂、钠、钾、铯中的一种或多种,并且抗衡阴离子选自硝酸根、碳酸根、碳酸氢根、卤离子、磷酸根、磷酸氢根、焦磷酸根、三磷酸根和硫酸根中的一种或多种。最优选的无机盐是碳酸钾。
任选地,酸性化学机械抛光组合物可以含有杀生物剂,诸如KORDEXTM MLX(9.5%-9.9%的甲基-4-异噻唑啉-3-酮、89.1%-89.5%的水以及≤1.0%的相关反应产物)或含有活性成分2-甲基-4-异噻唑啉-3-酮和5-氯-2-甲基-4-异噻唑啉-3-酮的KATHONTM ICP III,每个均由陶氏化学公司(KATHONTM和KORDEXTM是陶氏化学公司的商标)制造。此类杀生物剂可以以如本领域普通技术人员已知的常规量包含在本发明的酸性化学机械抛光组合物中。
优选地,本发明的化学机械抛光组合物不含氧化剂和腐蚀抑制剂。
优选地,化学机械抛光组合物由以下项组成:水;胶体二氧化硅磨料颗粒;具有式(I)的聚烷氧基有机硅烷化合物:
其中R选自(C1-C4)烷基;R1选自由氢、(C1-C4)烷基和R2C(O)-组成的组,其中R2选自由氢和(C1-C4)烷基组成的组;并且n是1至12的整数;pH>7;以及任选地碱金属或铵的无机盐或其混合物;任选地pH调节剂;以及任选地杀生物剂。
更优选地,化学机械抛光组合物由以下项组成:水;胶体二氧化硅磨料颗粒;具有式(I)的聚烷氧基有机硅烷化合物:
其中R选自(C1-C4)烷基;R1选自由氢、(C1-C4)烷基和R2C(O)-组成的组,其中R2选自由氢和(C1-C4)烷基组成的组;并且n是1至12的整数;pH>7;碱金属或铵的无机盐或其混合物;任选地pH调节剂;以及任选地杀生物剂。
甚至更优选地,化学机械抛光组合物由以下项组成:水;胶体二氧化硅磨料颗粒;聚烷氧基有机硅烷化合物,其选自由2-[甲氧基(聚亚乙基氧基)6-9丙基]三甲氧基硅烷、2-[甲氧基(聚亚乙基氧基)9-12丙基]三甲氧基硅烷、[羟基(聚亚乙基氧基)8-12丙基]三乙氧基硅烷、以及2-[(乙酰氧基(聚亚乙基氧基)丙基]三乙氧基硅烷组成的组;碱金属或铵的无机盐或其混合物;任选地pH调节剂;以及任选地杀生物剂。
在本发明的化学机械抛光方法中被抛光的衬底包括氧化硅、氮化硅和多晶硅中的至少一种。衬底中的氧化硅包括但不限于硼磷硅酸盐玻璃(BPSG)、等离子体蚀刻的原硅酸四乙酯(PETEOS)、热氧化物、未掺杂的硅酸盐玻璃、高密度等离子体(HDP)氧化物和源自原硅酸四乙酯(TEOS)的二氧化硅。如果存在的话,衬底的氮化硅包括但不限于氮化硅材料,诸如Si3N4。多晶硅可以包括无定形多晶硅、单晶多晶硅或结晶多晶硅。
优选地,在本发明的抛光衬底的方法中,所提供的化学机械抛光垫可以是本领域已知的任何合适的抛光垫。本领域普通技术人员知道选择用在本发明方法中适当的化学机械抛光垫。更优选地,在本发明的抛光衬底的方法中,所提供的化学机械抛光垫选自织造抛光垫和非织造抛光垫。还更优选地,在本发明的抛光衬底的方法中,所提供的化学机械抛光垫包括聚氨酯抛光层。最优选地,在本发明的抛光衬底的方法中,所提供的化学机械抛光垫包括含有聚合物中空芯微粒的聚氨酯抛光层以及聚氨酯浸渍的非织造子垫。优选地,所提供的化学机械抛光垫在抛光表面上具有至少一个凹槽。
优选地,在本发明的抛光衬底的方法中,在化学机械抛光垫与衬底之间的界面处或界面附近将所提供的化学机械抛光组合物分配到所提供的化学机械抛光垫的抛光表面上。
优选地,在本发明的抛光衬底的方法中,使用0.69至34.5kPa的垂直于被抛光衬底的表面的下压力,在所提供的化学机械抛光垫与衬底之间的界面处产生动态接触。
以下实例旨在进一步说明本发明,但是并不旨在限制其范围。
实例1
化学机械抛光组合物
以下化学机械抛光组合物被制备成包含下表1中公开的组分和量。将组分与余量去离子水组合。用氢氧化钾调节组合物的pH。
表1
*磨料:具有139nm平均粒度的KlebosolTM II 1630胶体二氧化硅,其由德国达姆施塔特默克集团制造的,从陶氏化学公司可获得的;以及
£碳酸钾,99.9wt.%(从奥德里奇公司(Aldrich)可获得的)。
缩水甘油氧基丙基-三乙氧基硅烷
甲氧基聚亚乙基氧基-6-9丙基三甲氧基硅烷
实例2
烘箱老化研究和平均粒度
将来自实例1中的表1的浆料放置在55℃下的常规对流烘箱中以加速颗粒老化,并在四周的过程中监测平均粒度并按粒度(CPS)进行收集。粒度(CPS)意指如通过CPSInstrument盘式离心机系统(从CPS仪器公司(CPS Instruments Inc)可获得的)确定的组合物的重均粒度。使用溶剂中的离心力按大小将颗粒分离,并使用光学光散射将其量化。
表2
即使用常规的缩水甘油氧基丙基三乙氧基硅烷胶体二氧化硅稳定剂,对于对比浆料平均粒度在28天内仍增加>35%。相比之下,用甲氧基聚亚乙基氧基-6-9丙基三甲氧基硅烷稳定的本发明的浆料的平均粒度具有在28天内仅约3%的平均粒度增加。
实例3
化学机械抛光组合物
以下化学机械抛光组合物被制备成包含下表3中公开的组分和量。将组分与余量去离子水组合。用氢氧化钾调节组合物的pH。
表3
*磨料:具有139nm平均粒度的KlebosolTM II 1630胶体二氧化硅,其由德国达姆施塔特默克集团制造的,从陶氏化学公司可获得的。
电导率测量程序和设备:
仪器:从科尔帕默公司(Cole Parmer)可获得的YSI 3200台式仪表;
探针-具有温度补偿的YSI 3253双铂环;
校准–使用前进行并且与从梅特勒托利多公司(Mettler Toledo)可获得的Mettler Toledo电导率标准一起使用;
样品制备-在测量前将所有样品放置在25℃水浴中20min.。
下表4中公开了电导率测量的结果。
表4
抛光浆料 | 电导率(mS) |
PC-3 | 6.10 |
PC-4 | 13.24 |
PC-5 | 20.29 |
PC-6 | 27.38 |
PS-2 | 20.36 |
PS-3 | 20.59 |
无机盐碳酸钾的添加基本上随着浓度的增加而增加了电导率(离子强度),因此致使较小的颗粒间排斥。
Claims (7)
2.如权利要求1所述的化学机械抛光组合物,其中,所述化学机械抛光组合物包含以下项作为初始组分:
水;
0.1至40wt%的所述胶体二氧化硅磨料颗粒;
0.001至5wt%的所述具有式(I)的聚烷氧基有机硅烷;
0.01至2wt%的碱金属或铵的无机盐或其混合物;
pH调节剂;并且,
所述pH是8-12。
3.如权利要求1所述的化学机械抛光组合物,其中,所述化学机械抛光组合物包含以下项作为初始组分:
水;
所述胶体二氧化硅磨料颗粒;
所述具有式(I)的聚烷氧基有机硅烷,其中R选自由甲基、乙基和丙基组成的组,R1选自由氢、甲基、乙基、丙基和R2-C(O)-组成的组,其中R2选自由氢、甲基、乙基和丙基组成的组;并且进一步包含碱金属或铵的无机盐或其混合物;n是6-12的整数;pH调节剂;以及8-12的pH。
4.如权利要求1所述的化学机械抛光组合物,其进一步包含杀生物剂。
5.如权利要求1所述的化学机械抛光组合物,其中,所述化学机械抛光组合物包含以下项作为初始组分:
水;
所述胶体二氧化硅磨料颗粒;
所述具有式(I)的聚烷氧基有机硅烷,其中R选自由甲基和乙基组成的组,R1选自由氢、甲基、乙基和R2-C(O)-组成的组,其中R2选自由甲基和乙基组成的组;并且进一步包含碱金属的无机盐,其中所述碱金属的无机盐是碳酸钾;n为6-9、8-12或9-12;pH调节剂;以及8-11的pH。
6.如权利要求1所述的化学机械抛光组合物,其中,所述具有式(I)的聚烷氧基有机硅烷选自由2-[甲氧基(聚亚乙基氧基)6-9丙基]三甲氧基硅烷、2-[甲氧基(聚亚乙基氧基)9-12丙基]三甲氧基硅烷、[羟基(聚亚乙基氧基)8-12丙基]三乙氧基硅烷、以及2-[(乙酰氧基(聚亚乙基氧基)丙基]三乙氧基硅烷组成的组。
7.一种用于对衬底进行化学机械抛光的方法,所述方法包括:
提供衬底,其中所述衬底包括氧化硅、氮化硅和多晶硅中的至少一种;
提供如权利要求1所述的化学机械抛光组合物;
提供具有抛光表面的化学机械抛光垫;
用0.69至69kPa的下压力在所述化学机械抛光垫的抛光表面与所述衬底之间的界面处产生动态接触;以及
在所述化学机械抛光垫与所述衬底之间的界面处或界面附近将所述化学机械抛光组合物分配到所述化学机械抛光垫上;
其中所述衬底被抛光;并且其中,将所述氧化硅、氮化硅、多晶硅或其组合中的至少一些从所述衬底上移除。
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