CN111430326A - 一种嵌入式高散热扇出型封装结构及封装方法 - Google Patents

一种嵌入式高散热扇出型封装结构及封装方法 Download PDF

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CN111430326A
CN111430326A CN202010148008.8A CN202010148008A CN111430326A CN 111430326 A CN111430326 A CN 111430326A CN 202010148008 A CN202010148008 A CN 202010148008A CN 111430326 A CN111430326 A CN 111430326A
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dissipation fan
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崔成强
杨冠南
徐广东
张昱
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Guangdong Fozhixin Microelectronics Technology Research Co ltd
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Guangdong University of Technology
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Abstract

本发明涉及一种嵌入式高散热扇出型封装结构，包括均带有凸点的芯片、开有凹槽的石墨烯载板、塑封层、固定层、阻焊层、再布线层、介电层以及焊球；所述介电层覆盖在所述石墨烯载板上，所述再布线层覆盖在所述介电层上，所述芯片的背面通过所述固定层粘结在所述石墨烯载板的凹槽内，所述芯片与所述再布线层通过引线键合，所述塑封层包裹在所述芯片上，所述焊球连接在所述再布线层的上方，所述阻焊层设置在所述再布线层的上方。本发明的嵌入式高散热扇出型封装结构为芯片的扇出型封装提供了稳定的支撑，而且大大提高了封装结构的散热效果。

Description

一种嵌入式高散热扇出型封装结构及封装方法
技术领域
本发明涉及封装结构技术领域，具体涉及一种嵌入式高散热扇出型封装结构及封装方法。
背景技术
随着电子产品高性能化和集成化的潮流，芯片向密度更高、速度更快、成本更低等方向发展，功率电子器件也逐渐采用先进的封装技术，如晶圆级封装或嵌入式封装。宽禁带半导体电力电子器件近年来不断获得技术的突破，具备广泛的市场应用前景。这类器件具备更高的效率、更高的开关频率和更高的工作温度等优势，在新能源发电、电动汽车、充电桩、电力转换及管理系统和工业电机领域等已展现出其巨大的应用潜力。
因芯片的功率提高产生了大量的热，高温条件下对封装的结构、材料和散热等方面提出了挑战，封装结构散热可以采用在塑封后的芯片背面粘贴散热器，这对高功率下的芯片散热有一定作用，但散热效果有限；陶瓷材料由于其在热、电、机械特性等方面极为稳定，被用做集成电路芯片封装。传统的方法是将芯片放置在已载有引脚架或后膜金属导线的陶瓷基板孔洞中，完成芯片与引脚或后膜金属键合点之间的电路互连，再将另一片陶瓷或金属封盖以玻璃、锡合金焊料将其与基板密封粘接而完成。然而随着芯片及功率器件的不断发展，再进一步提高芯片I/O数量，同时减小芯片尺寸，提高集成度、可靠性和散热能力等方面还存局限。
发明内容
为了解决现有的芯片封装结构在散热方面的能力还存在不足的问题，本发明提供了一种嵌入式高散热扇出型封装结构及封装方法，为芯片的扇出型封装提供了稳定的支撑，而且大大提高了封装结构的散热效果。
为解决上述技术问题，本发明提供以下技术方案：
一种嵌入式高散热扇出型封装结构，包括均带有凸点的芯片、开有凹槽的石墨烯载板、塑封层、固定层、阻焊层、再布线层、介电层以及焊球；所述介电层覆盖在所述石墨烯载板上，所述再布线层覆盖在所述介电层上，所述芯片的背面通过所述固定层粘结在所述石墨烯载板的凹槽内，所述芯片与所述再布线层通过引线键合，所述塑封层包裹在所述芯片上，所述焊球连接在所述再布线层的上方，所述阻焊层设置在所述再布线层的上方。
在本发明中，将芯片放在石墨烯载板的凹槽上，为芯片提供支撑，同时提供散热的能力，极大地改善了芯片的散热环境，散热效果更好。
进一步的，所述石墨烯载板包括横向原子层排布石墨烯载板以及纵向原子层排布石墨烯载板，所述横向原子层排布石墨烯载板设置在所述纵向原子层排布石墨烯载板的上方，散热性能更好。
进一步的，所述石墨烯载板的形状制造成热沉形状，散热效果更好。
进一步的，所述固定层为纳米铜膏或纳米银膏，粘结效果更好。
进一步的，所述石墨烯载板由石墨烯或其复合材料制成，稳定好，散热性能好。
进一步的，所述石墨烯载板上的凹槽通过机械、化学刻蚀、激光加工或通过将开孔与未开孔的多层石墨烯板压合制成，制作起来更加简单。
进一步的，所述介电层的材料为环氧树脂、聚酰亚胺或苯并环丁烯，材料性能稳定。
进一步的，所述塑封层的材料为环氧树脂、聚酯、聚氨酯、聚硅氧烷、双马来酰亚胺或氰酸酯树脂，材料性能稳定。
一种基于上述的嵌入式高散热扇出型封装结构的嵌入式高散热扇出型封装方法，包括以下步骤：
S1：在石墨烯载板上预留芯片凹槽，并在凹槽内涂覆一层固定层，将芯片以背面向下的方式放入凹槽内并将固定层烧结；
S2：在石墨烯载板上涂覆介电层；
S3：在介电层上沉积一层金属种子层后，覆压一层干膜，通过曝光显影和图形电镀，获得金属线路层；
S4：进行退膜处理，去除干膜并通过差别刻蚀的方法去掉种子层；
S5：在再布线层上方涂覆光敏阻焊材料作为阻焊层，并进行曝光、显影、固化处理和表面处理；
S6：进行球下金属沉积和植球，然后通过引线键合，连接芯片的凸点与再布线层，并进行塑封，最后获得所需封装结构。
进一步的，在步骤S2中，先在石墨烯载板上涂覆一层粘附层再涂覆介电层，可以达到更高结合力。
进一步的，在步骤S6中，进行植球以及塑封后，焊球的高度高于芯片塑封后的高度，保证最后能够正常使用。
与现有技术相比，本发明具有以下有益效果：
本发明通过将芯片放在石墨烯载板的凹槽上，为芯片的扇出型封装提供了稳定的支撑，同时借助石墨烯优异的导热性能进行散热，大大改善了原有封装结构的散热效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据附图获得其他的附图。
图1为本发明的嵌入式高散热扇出型封装结构的结构示意图；
图2为本发明的嵌入式高散热扇出型封装方法的示意图；
图3为本发明的嵌入式高散热扇出型封装结构的石墨烯载板为热沉状时的结构示意图。
图中：1、横向原子层排布石墨烯载板；2、纵向原子层排布石墨烯载板；3、芯片；4、固定层；5、介电层；6、干膜；7、再布线层；8、阻焊层；9、焊球；10、塑封层；11、引线。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
本发明实施例包括：
如图1所示，一种嵌入式高散热扇出型封装结构，包括均带有凸点的芯片3、开有凹槽的石墨烯载板、塑封层10、固定层4、阻焊层8、再布线层7、介电层5以及焊球9；介电层5覆盖在石墨烯载板上，再布线层7覆盖在介电层5上，芯片3的背面通过固定层4粘结在石墨烯载板的凹槽内，芯片3与再布线层7通过引线11键合，塑封层10包裹在芯片3上，焊球9连接在再布线层7的上方，阻焊层8设置在再布线层7的上方。
在本发明中，将芯片3放在石墨烯载板的凹槽上，为芯片3提供支撑，同时提供散热的能力，极大地改善了芯片3的散热环境，散热效果更好。
如图1所示，石墨烯载板包括横向原子层排布石墨烯载板1以及纵向原子层排布石墨烯载板2，横向原子层排布石墨烯载板1设置在纵向原子层排布石墨烯载板2的上方，散热性能更好。
如图3所示，石墨烯载板的形状制造成热沉形状，散热效果更好。
在本实施例中，固定层4为纳米铜膏或纳米银膏，粘结效果更好。
在本实施例中，石墨烯载板由石墨烯或其复合材料制成，稳定好，散热性能好。
在本实施例中，石墨烯载板上的凹槽通过机械、化学刻蚀、激光加工或通过将开孔与未开孔的多层石墨烯板压合制成，制作起来更加简单。
在本实施例中，介电层5的材料为环氧树脂、聚酰亚胺或苯并环丁烯，材料性能稳定。
在本实施例中，塑封层10的材料为环氧树脂、聚酯、聚氨酯、聚硅氧烷、双马来酰亚胺或氰酸酯树脂，材料性能稳定。
如图2所示，一种基于上述的嵌入式高散热扇出型封装结构的嵌入式高散热扇出型封装方法，包括以下步骤：
S1：在石墨烯载板上预留芯片3凹槽，并在凹槽内涂覆一层固定层4，将芯片3以背面向下的方式放入凹槽内并将固定层4烧结；
S2：在石墨烯载板上涂覆介电层5；
S3：在介电层5上沉积一层金属种子层后，覆压一层干膜6，通过曝光显影和图形电镀，获得金属线路层；
S4：进行退膜处理，去除干膜6并通过差别刻蚀的方法去掉种子层；
S5：在再布线层7上方涂覆光敏阻焊材料作为阻焊层8，并进行曝光、显影、固化处理和表面处理；
S6：进行球下金属沉积和植球，然后通过引线11键合，连接芯片3的凸点与再布线层7，并进行塑封，最后获得所需封装结构。
在本实施例中，在步骤S2中，先在石墨烯载板上涂覆一层粘附层再涂覆介电层5，可以达到更高结合力。
在本实施例中，在步骤S6中，进行植球以及塑封后，焊球9的高度高于芯片3塑封后的高度，保证最后能够正常使用。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书内容所作的等效结构或等效流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种嵌入式高散热扇出型封装结构，其特征在于，包括均带有凸点的芯片、开有凹槽的石墨烯载板、塑封层、固定层、阻焊层、再布线层、介电层以及焊球；所述介电层覆盖在所述石墨烯载板上，所述再布线层覆盖在所述介电层上，所述芯片的背面通过所述固定层粘结在所述石墨烯载板的凹槽内，所述芯片与所述再布线层通过引线键合，所述塑封层包裹在所述芯片上，所述焊球连接在所述再布线层的上方，所述阻焊层设置在所述再布线层的上方。
2.根据权利要求1所述的嵌入式高散热扇出型封装结构，其特征在于，所述石墨烯载板包括横向原子层排布石墨烯载板以及纵向原子层排布石墨烯载板，所述横向原子层排布石墨烯载板设置在所述纵向原子层排布石墨烯载板的上方。
3.根据权利要求2所述的嵌入式高散热扇出型封装结构，其特征在于，所述固定层为纳米铜膏或纳米银膏。
4.根据权利要求1所述的嵌入式高散热扇出型封装结构，其特征在于，所述石墨烯载板由石墨烯或其复合材料制成。
5.根据权利要求1所述的嵌入式高散热扇出型封装结构，其特征在于，所述石墨烯载板上的凹槽通过机械、化学刻蚀、激光加工或通过将开孔与未开孔的多层石墨烯板压合制成。
6.根据权利要求1所述的嵌入式高散热扇出型封装结构，其特征在于，所述介电层的材料为环氧树脂、聚酰亚胺或苯并环丁烯。
7.根据权利要求1所述的嵌入式高散热扇出型封装结构，其特征在于，所述塑封层的材料为环氧树脂、聚酯、聚氨酯、聚硅氧烷、双马来酰亚胺或氰酸酯树脂。
8.一种基于权利要求1所述的嵌入式高散热扇出型封装结构的嵌入式高散热扇出型封装方法，其特征在于，包括以下步骤：
S1：在石墨烯载板上预留芯片凹槽，并在凹槽内涂覆一层固定层，将芯片以背面向下的方式放入凹槽内并将固定层烧结；
S2：在石墨烯载板上涂覆介电层；
S3：在介电层上沉积一层金属种子层后，覆压一层干膜，通过曝光显影和图形电镀，获得金属线路层；
S4：进行退膜处理，去除干膜并通过差别刻蚀的方法去掉种子层；
S5：在再布线层上方涂覆光敏阻焊材料作为阻焊层，并进行曝光、显影、固化处理和表面处理；
S6：进行球下金属沉积和植球，然后通过引线键合，连接芯片的凸点与再布线层，并进行塑封，最后获得所需封装结构。
9.根据权利要求8所述的嵌入式高散热扇出型封装方法，其特征在于，在步骤S2中，先在石墨烯载板上涂覆一层粘附层再涂覆介电层。
10.根据权利要求8所述的嵌入式高散热扇出型封装方法，其特征在于，在步骤S6中，进行植球以及塑封后，焊球的高度高于芯片塑封后的高度。
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