CN111370572B - Reverse buckling welding packaging structure of airtight current sensor - Google Patents
Reverse buckling welding packaging structure of airtight current sensor Download PDFInfo
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- CN111370572B CN111370572B CN202010127071.3A CN202010127071A CN111370572B CN 111370572 B CN111370572 B CN 111370572B CN 202010127071 A CN202010127071 A CN 202010127071A CN 111370572 B CN111370572 B CN 111370572B
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- ceramic shell
- shell base
- hall chip
- hall
- chip
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- 238000003466 welding Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000005219 brazing Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000003292 glue Substances 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The invention relates to an airtight current sensor flip-chip welding packaging structure which comprises a ceramic shell base, a Hall chip, bottom filling glue and a cover plate; the Hall chip is reversely buckled in a core cavity of the ceramic shell base, the Hall element on the Hall chip is positively buckled in the central area of the current path of the electrified conductor on the ceramic shell base, and the Hall chip and the metal bonding pad of the ceramic shell base are correspondingly welded one by one through the solder bumps on the Hall chip to form interconnection; the cover plate is welded with the sealing ring of the ceramic shell base through parallel seam welding or laser welding to form an airtight sealing structure. The invention does not need to redesign a Hall chip, and solves the problems of poor reliability, short service life and even failure caused by moisture absorption in the wet environment, low air pressure expansion in the space environment and the like of the traditional plastic packaging current sensor.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to an inverted buckle welding packaging structure of an airtight current sensor.
Background
The existing current-voltage sensor basically adopts plastic package small-shape package (such as SOIC08 and the like), chip pressing points are bonded with copper or copper alloy lead frames through metal wires to form interconnection, or are reversely buckled on the lead frames to form interconnection, then an epoxy plastic (EMC) package material is adopted, and the bonding leads are relatively short in temperature change stress resistance and frequency due to the fact that glass transition temperature of the epoxy plastic (EMC) package material and thermal expansion coefficient mismatch of the copper lead frames, silicon chips and the like are limited, and use temperature is low and use reliability is relatively weak compared with that of an airtight ceramic package. In view of the above problems, no effective solution has been proposed at present.
Disclosure of Invention
The technical problem to be solved by the invention is to solve the problems of the reverse welding process of the Hall chip and the air tightness of the current sensor without redesigning the Hall chip, and improve the use temperature and the use reliability of the current sensor.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention relates to a reverse buckling welding packaging structure of an airtight current sensor, which comprises a ceramic shell base, a Hall chip, bottom filling glue and a cover plate, wherein the bottom filling glue is arranged on the bottom of the ceramic shell base; the core cavity of the ceramic shell base is internally provided with an energizing conductor and a metal bonding pad, the energizing conductor and the metal bonding pad are respectively communicated with the leading-out end, and the top surfaces of the energizing conductor and the metal bonding pad are coplanar; the Hall chip is reversely buckled in a core cavity of the ceramic shell base, the Hall element is positively buckled in the central area of a current path of the electrified conductor, and the solder bump is welded with a metal pad of the ceramic shell base through Gao Wenhui flow welding to form interconnection with the leading-out end; the Hall chip, the solder bumps and the like are filled by the underfill; and finally, the cover plate is welded with a sealing ring of the ceramic shell base through parallel seam welding to form an airtight sealing structure, so that the device can stably work for a long time in a severe environment.
Further, the power-on conductor, the bonding pad and the leading-out terminal in the core cavity of the ceramic shell base are processed into a designed shape by a low-resistivity metal material with a certain thickness through processes including, but not limited to, die punching, laser etching and wet etching, and are communicated through brazing of silver brazing filler metal and the corresponding leading-out terminal of the ceramic shell.
Further, the sealing ring welding of the cover plate and the ceramic shell base is optional, and laser welding or low-temperature alloy welding flux sealing can be adopted.
The invention has the beneficial effects that: the low-resistance current path is constructed by the low-resistivity electrified conductor with a certain thickness through the silver solder and the leading-out end of the ceramic shell base, so that on one hand, the heat dissipation power is reduced, on the other hand, the coplanarity of the electrified conductor and the metal bonding pad ensures that the Hall element of the Hall chip can be close to the current path to ensure the accuracy of current sensing, the underfill strengthens the structural strength and the reliability of the Hall chip and the ceramic shell base, and the problems of poor reliability, short service life and even failure caused by moisture absorption in the wet environment, low air pressure expansion used in the space environment and the like of the traditional clip welding plastic packaging current sensor are solved, the research and development cost is reduced, the development period is shortened, and the application range of the current sensor is enlarged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of a ceramic housing base of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure in accordance with the preferred embodiment 1 of the present invention;
FIG. 2 is a front bottom plan view of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure of the preferred embodiment 1 of the present invention;
FIG. 3 is a top view of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure of preferred embodiment 1 of the present invention;
FIG. 4 is a bottom view of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure of the preferred embodiment 1 of the present invention;
FIG. 5 is a cross-sectional view (A-A direction) of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure of the preferred embodiment 1 of the present invention;
FIG. 6 is a cross-sectional view (B-B direction) of a hermetically sealed current sensor flip-chip bonded CDFN06 package structure of the preferred embodiment 1 of the present invention;
fig. 7 is a (C-C direction) cross-sectional view of a hermetically sealed current sensor flip-chip bonded CDFN 06-type package structure of preferred embodiment 1 of the present invention.
In the figure:
1. a ceramic housing base; 11. a lead-out end; 12. a current-carrying conductor; 13. a metal pad; 14. a sealing ring; 15. silver solder; 2. a Hall chip; 21. solder bumps; 22. a Hall element; 3. filling glue at the bottom; 4. and a cover plate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the invention, fall within the scope of protection of the invention.
As shown in fig. 1 to 3, a hermetically sealed current sensor flip-chip bonding 1.27mm pitch CDFN 06-type package structure of the preferred embodiment 1 of the present invention comprises: the Hall type LED lamp comprises a ceramic shell base (1), a Hall chip (2), bottom filling glue (3) and a cover plate (4); the bottom of the ceramic shell base (1) is provided with a leading-out end (11), an energizing conductor (12) and a metal bonding pad (13) are arranged in a core cavity of the ceramic shell base (1), the top of the ceramic shell base (1) is provided with a sealing ring (14), the energizing conductor (12) is welded with the corresponding leading-out end (11) through a silver solder (15) to form a low-resistance energizing path, and the metal bonding pad (13) is welded with the leading-out end (11) of the ceramic shell base (1) through the silver solder (15) to form a one-to-one electric interconnection path; the Hall element (22) on the Hall chip (2) is reversely buckled in the central area of the current path of the energizing conductor (12), and the solder bump (21) of the Hall chip (2) is welded with the metal pad (13) of the ceramic shell base (1) through Gao Wenhui flow welding to form electrical interconnection; the cover plate (4) is welded with the sealing ring (14) of the ceramic shell base (1) through a parallel seam welding process to form an airtight sealing structure. The flip Hall chip (2) and the solder bumps (21) thereon are filled with the underfill (3).
In order to facilitate understanding of the above technical solutions of the present invention, the following describes the above technical solutions of the present invention in detail by a specific usage manner.
In the specific use of the present invention,
example 1: the utility model provides a gas tightness current sensor back-off welds 1.27mm pitch CDFN06 type high temperature cofired alumina ceramic package structure, specifically as follows:
firstly, adopting a multilayer raw ceramic membrane with 90% -94% of alumina content to print patterns and fill holes by using tungsten paste of 3-50 mu m to manufacture a raw ceramic part, co-firing the raw ceramic part at high temperature to obtain a mature ceramic part, then brazing a ceramic shell base with a C19400 copper alloy 1.27mm pitch leading end 11, a 0.40mm current-carrying conductor 12, a 0.40mm metal bonding pad 13 and a sealing ring 14 prepared by 0.30mm 4J80, which are prepared by wet etching, by using a Bag72Cu silver solder 15 with the thickness of 20-100 mu m to prepare a ceramic shell base after electroplating a nickel-1.3-5.7 mu m gold layer with the thickness of 1.3-8.9 mu m; secondly, a Hall chip 2 with the thickness of 0.20-0.60 mm is buckled in a core cavity of a base of the ceramic shell, copper column tin cap type solder bumps 21 with the heights of 120 mu m and 120 mu m on the chip are in one-to-one correspondence with metal bonding pads 13 of the base 1 of the ceramic shell, and are subjected to reflow soldering at a high temperature of about 260 ℃ to form connection;
then, cleaning the ceramic shell base 1 of the assembled chip by oxygen microwave plasma, filling the Hall chip by HYSOL-type FP4451TD filling glue, and curing;
finally, the 4J80 cover plate 4 with the thickness of 0.10mm and the sealing ring 14 with the height of 0.30mm are sealed through a parallel seam welding process, and the packaging is finished after marking and qualified air tightness detection.
In order to facilitate understanding of the above technical solutions of the present invention, the following describes the above technical solutions of the present invention in detail by a specific usage manner.
In the specific use of the present invention,
in summary, by means of the above technical scheme of the invention, the low-resistance energizing path is formed by welding the energizing conductor (12) manufactured by low resistivity with the corresponding leading-out end (11) through the silver solder (15), so that the problem of heat dissipation power is solved; the welding height of the solder convex points (21) of the back-off welding Hall chip (2) and the metal bonding pads (13) of the ceramic shell base (1) is minimum, the Hall element (22) of the Hall chip (2) is buckled in the central area of the current path of the energizing conductor (12) on the ceramic shell base (1), the distance between the Hall element (22) and the energizing conductor (12) is greatly reduced, and the current sensing precision and the electric interconnection of the Hall chip and the energizing conductor of the ceramic shell base are solved; the ceramic shell base metal part is made of a non-magnetic material, so that the safety problems that the current sensor is easy to adsorb scrap iron to cause motor discharge and even short circuit and the like due to the fact that the ceramic shell base and the cover plate manufactured by the conventional 4J42 or 4J29 are solved; meanwhile, the sealing ring (14) of the ceramic shell base (1) and the cover plate (4) form an airtight sealing structure, so that the problems of poor reliability, short service life and even failure caused by moisture absorption in a humid environment, low air pressure expansion in a space environment and the like of the traditional plastic packaging current sensor are solved.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (2)
1. The packaging structure comprises a ceramic shell base (1), a Hall chip (2), underfill (3) and a cover plate (4); the ceramic shell base (1) is provided with a plurality of leading-out ends (11), a power-on conductor (12), a metal bonding pad (13), a sealing ring (14) and silver solder (15), and is characterized in that: the plurality of leading-out ends (11) and the electrified conductors (12) are brazed on the ceramic shell base (1) by silver brazing filler metal (15) and form a low-resistance conductive path; the Hall chip (2) is provided with solder bumps (21) and Hall elements (22), the Hall chip (2) is reversely buckled on a metal bonding pad (13) and an electrified conductor (12) of the ceramic shell base (1), and the solder bumps (21) are used for welding the Hall chip (2) and the metal bonding pad (13) to form one-to-one interconnection through high-temperature reflow; the Hall chip (2) is filled with underfill (3); the cover plate (4) in the packaging structure is welded with the sealing ring (14) of the ceramic shell (1) through laser welding or parallel seam welding to form an airtight sealing structure; in addition, a plurality of the leading-out ends (11), the metal bonding pads (13) and the sealing rings (14) are brazed with the ceramic shell base (1) through silver brazing filler metal (15), the energizing conductors (12) are directly brazed on the corresponding leading-out ends (11), and the top surfaces of the energizing conductors (12) and the metal bonding pads (13) are coplanar.
2. The hermetically sealed current sensor flip-chip package structure of claim 1, wherein: the Hall chip (2) is reversely buckled on the metal bonding pad (13) and the electric conductor (12) of the ceramic shell base (1), the Hall element (22) spans the electrified conductor (12), and the solder bumps (21) are subjected to high-temperature reflow to form interconnection in one-to-one correspondence with the metal bonding pads (13); the Hall chip (2) and the solder bumps (21) thereof, the bottom of the ceramic shell base (1) and the energizing conductors (12) thereof, and the metal bonding pads (13) are filled by the underfill adhesive (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127071.3A CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127071.3A CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
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| Publication Number | Publication Date |
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| CN111370572A CN111370572A (en) | 2020-07-03 |
| CN111370572B true CN111370572B (en) | 2023-11-10 |
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| CN202010127071.3A Active CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114400282A (en) * | 2021-12-30 | 2022-04-26 | 福建闽航电子有限公司 | Non-magnetic ceramic packaging body |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4048670A (en) * | 1975-06-30 | 1977-09-13 | Sprague Electric Company | Stress-free hall-cell package |
| JPH0634272U (en) * | 1992-10-12 | 1994-05-06 | 株式会社三協精機製作所 | Hall element |
| JPH10256413A (en) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Semiconductor package |
| JP2000252545A (en) * | 1999-02-25 | 2000-09-14 | Hitachi Cable Ltd | Hall sensor |
| JP2001102492A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Wiring board and mounting structure thereof |
| EP1271159A2 (en) * | 2001-06-15 | 2003-01-02 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US6528351B1 (en) * | 2001-09-24 | 2003-03-04 | Jigsaw Tek, Inc. | Integrated package and methods for making same |
| US6580159B1 (en) * | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| JP2009076588A (en) * | 2007-09-19 | 2009-04-09 | Dainippon Printing Co Ltd | Sensor package and its manufacturing method |
| CN101943715A (en) * | 2009-07-07 | 2011-01-12 | 成都芯源系统有限公司 | Hall effect current sensor and current detection method |
| CN102236042A (en) * | 2010-04-08 | 2011-11-09 | 英飞凌科技股份有限公司 | Magnetic field current sensors |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN103928409A (en) * | 2014-03-17 | 2014-07-16 | 江苏省宜兴电子器件总厂 | Integrated circuit inverting welding air impermeability packaging structure |
| CH707687A1 (en) * | 2013-03-08 | 2014-09-15 | Melexis Technologies Nv | Current sensor. |
| CN105428321A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell structure for inverted installation of hermetic chip |
| CN205248252U (en) * | 2015-12-23 | 2016-05-18 | 中国电子科技集团公司第十三研究所 | Gas tightness chip flip -chip installation is with ceramic pad array shell structure |
| CN105870071A (en) * | 2016-06-28 | 2016-08-17 | 中国电子科技集团公司第十三研究所 | Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell |
| CN106229301A (en) * | 2016-08-01 | 2016-12-14 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness surface attaching type digital isolator encapsulating structure |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| CN106847772A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第五十八研究所 | For the flux-free flip chip method of ceramic package |
| CN108831869A (en) * | 2018-06-06 | 2018-11-16 | 江苏省宜兴电子器件总厂有限公司 | A kind of method of common burning porcelain shell pad preparation |
| CN208636360U (en) * | 2018-04-25 | 2019-03-22 | 长电科技（宿迁）有限公司 | A kind of current sensor package structure |
| CN109599485A (en) * | 2019-01-28 | 2019-04-09 | 意瑞半导体（上海）有限公司 | The lead frame and sensor of Hall current sensor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200731430A (en) * | 2006-02-08 | 2007-08-16 | Jung-Tang Huang | Controllable method for manufacturing uniform planarity of plating-based solder bumps on multi-layer flip chip used in the three-dimensional packaging |
| US8316552B1 (en) * | 2011-05-05 | 2012-11-27 | Honeywell International Inc. | Systems and methods for three-axis sensor chip packages |
| US8629539B2 (en) * | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
| US10283699B2 (en) * | 2016-01-29 | 2019-05-07 | Avago Technologies International Sales Pte. Limited | Hall-effect sensor isolator |
| US20170271244A1 (en) * | 2016-03-21 | 2017-09-21 | Texas Instruments Incorporated | Lead frame with solder sidewalls |
-
2020
- 2020-02-28 CN CN202010127071.3A patent/CN111370572B/en active Active
Patent Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4048670A (en) * | 1975-06-30 | 1977-09-13 | Sprague Electric Company | Stress-free hall-cell package |
| JPH0634272U (en) * | 1992-10-12 | 1994-05-06 | 株式会社三協精機製作所 | Hall element |
| JPH10256413A (en) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Semiconductor package |
| JP2000252545A (en) * | 1999-02-25 | 2000-09-14 | Hitachi Cable Ltd | Hall sensor |
| JP2001102492A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Wiring board and mounting structure thereof |
| US6580159B1 (en) * | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| EP1271159A2 (en) * | 2001-06-15 | 2003-01-02 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US6528351B1 (en) * | 2001-09-24 | 2003-03-04 | Jigsaw Tek, Inc. | Integrated package and methods for making same |
| JP2009076588A (en) * | 2007-09-19 | 2009-04-09 | Dainippon Printing Co Ltd | Sensor package and its manufacturing method |
| CN101943715A (en) * | 2009-07-07 | 2011-01-12 | 成都芯源系统有限公司 | Hall effect current sensor and current detection method |
| CN102236042A (en) * | 2010-04-08 | 2011-11-09 | 英飞凌科技股份有限公司 | Magnetic field current sensors |
| CH707687A1 (en) * | 2013-03-08 | 2014-09-15 | Melexis Technologies Nv | Current sensor. |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN103928409A (en) * | 2014-03-17 | 2014-07-16 | 江苏省宜兴电子器件总厂 | Integrated circuit inverting welding air impermeability packaging structure |
| CN105428321A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell structure for inverted installation of hermetic chip |
| CN205248252U (en) * | 2015-12-23 | 2016-05-18 | 中国电子科技集团公司第十三研究所 | Gas tightness chip flip -chip installation is with ceramic pad array shell structure |
| CN105870071A (en) * | 2016-06-28 | 2016-08-17 | 中国电子科技集团公司第十三研究所 | Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell |
| CN106229301A (en) * | 2016-08-01 | 2016-12-14 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness surface attaching type digital isolator encapsulating structure |
| CN106847772A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第五十八研究所 | For the flux-free flip chip method of ceramic package |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| CN208636360U (en) * | 2018-04-25 | 2019-03-22 | 长电科技（宿迁）有限公司 | A kind of current sensor package structure |
| CN108831869A (en) * | 2018-06-06 | 2018-11-16 | 江苏省宜兴电子器件总厂有限公司 | A kind of method of common burning porcelain shell pad preparation |
| CN109599485A (en) * | 2019-01-28 | 2019-04-09 | 意瑞半导体（上海）有限公司 | The lead frame and sensor of Hall current sensor |
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