CN111370572A - Encapsulation structure is welded to gas tightness current sensor back-off - Google Patents
Encapsulation structure is welded to gas tightness current sensor back-off Download PDFInfo
- Publication number
- CN111370572A CN111370572A CN202010127071.3A CN202010127071A CN111370572A CN 111370572 A CN111370572 A CN 111370572A CN 202010127071 A CN202010127071 A CN 202010127071A CN 111370572 A CN111370572 A CN 111370572A
- Authority
- CN
- China
- Prior art keywords
- ceramic shell
- shell base
- chip
- hall
- hall chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title description 3
- 239000000919 ceramic Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims description 17
- 238000005219 brazing Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 abstract description 4
- 229920003023 plastic Polymers 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract 1
- 229920006336 epoxy molding compound Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Abstract
The invention relates to an air-tightness current sensor back-off welding packaging structure, which comprises a ceramic shell base, a Hall chip, bottom filling glue and a cover plate, wherein the ceramic shell base is provided with a plurality of through holes; the Hall chip is reversely buckled in a core cavity of the ceramic shell base, a Hall element on the Hall chip is buckled in the central area of a current path of a current-conducting conductor on the ceramic shell base, and the Hall chip and a metal pad of the ceramic shell base are correspondingly welded to form interconnection one by one through a welding flux salient point on the Hall chip; the cover plate is welded with a sealing ring of the ceramic shell base through parallel seam welding or laser welding to form an airtight sealing structure. The invention does not need to redesign a Hall chip, and solves the problems of poor use reliability, short service life and even failure caused by moisture absorption of the existing plastic packaged current sensor in a humid environment, low air pressure expansion in a space environment and the like.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to an air-tightness current sensor flip-chip welding packaging structure.
Background
The existing current and voltage sensor basically adopts plastic package with small outline (such as SOIC08, etc.), chip pressure points are bonded with a copper or copper alloy lead frame through metal wires to form interconnection, or are reversely buckled on the lead frame to form interconnection, then an Epoxy Molding Compound (EMC) encapsulating material is adopted, and the temperature change stress and times of bonding leads are relatively short due to the glass transition temperature of the Epoxy Molding Compound (EMC) encapsulating material and the mismatch of thermal expansion coefficients of the copper lead frame, a silicon chip, etc., and the use temperature is lower than that of the airtight ceramic package and the use reliability is relatively weak. In view of the above problems, no effective solution has been proposed.
Disclosure of Invention
The invention aims to solve the technical problems that the Hall chip is not redesigned, the problems of the flip-chip welding process of the Hall chip and the air tightness of the current sensor are solved, and the use temperature and the use reliability of the current sensor are improved.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention relates to an air-tightness current sensor inverted buckle welding packaging structure, which comprises a ceramic shell base, a Hall chip, bottom filling glue and a cover plate, wherein the Hall chip is arranged on the ceramic shell base; an electrified conductor and a metal pad are arranged in a core cavity of the ceramic shell base, the electrified conductor and the metal pad are respectively communicated with the leading-out end, and the top surfaces of the electrified conductor and the metal pad are coplanar; the Hall chip is reversely buckled in a core cavity of the ceramic shell base, a Hall element of the Hall chip is positively buckled in the central area of a current path of the current-carrying conductor, and a solder bump of the Hall chip is welded with a metal pad of the ceramic shell base through high-temperature reflow soldering to form interconnection with a leading-out end; the Hall chip and the solder bumps thereof are filled with underfill; and finally, the cover plate is welded with a sealing ring of the ceramic shell base through parallel seam welding to form an airtight sealing structure, so that the device can stably work in a severe environment for a long time.
Further, the electrified conductor, the welding disc and the leading-out terminal in the core cavity of the base of the ceramic shell are processed into a designed shape by a low-resistivity metal material with a certain thickness through processes including but not limited to die punching, laser etching and wet etching, and are in communication with the corresponding leading-out terminal of the ceramic shell through brazing of silver solder.
Further, the welding of the cover plate to the sealing ring of the ceramic housing base is optional, and the sealing can be performed by laser welding or low-temperature alloy welding.
The invention has the beneficial effects that: the electrified conductor of certain thickness low resistivity passes through silver brazing filler metal and constructs the low resistance current path with the leading-out terminal of ceramic housing base, heat dissipation power has been reduced on the one hand, on the other hand electrified conductor, the coplane of metal pad has guaranteed that the hall element of hall chip can be pressed close to and guarantees current sensing's precision with the current path, underfill has strengthened the structural strength and the reliability of hall chip and ceramic housing base, do not redesign hall chip and just solve current clip welding plastics encapsulation current sensor and lead to the poor reliability of use and short-lived or even inefficacy because of the moisture absorption under humid environment, and the low atmospheric pressure inflation scheduling problem that uses under the space environment, research and development cost is reduced, development cycle has been shortened, the application range of current sensor has been enlarged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a top view of a ceramic housing base of a hermetically sealed current sensor flip-chip bonded CDFN06 type package in accordance with a preferred embodiment 1 of the present invention;
fig. 2 is a front bottom sealing view of a hermetically sealed current sensor flip-chip bonded CDFN06 type package structure in accordance with a preferred embodiment 1 of the present invention;
fig. 3 is a top view of a hermetic current sensor flip-chip bonding CDFN06 type package structure according to preferred embodiment 1 of the present invention;
fig. 4 is a bottom view of a hermetic current sensor flip-chip bonding CDFN06 type package structure in accordance with preferred embodiment 1 of the present invention;
fig. 5 is a cross-sectional view (a-a direction) of a hermetic current sensor flip-chip bonding CDFN06 type package structure in accordance with preferred embodiment 1 of the present invention;
fig. 6 is a cross-sectional view (B-B direction) of a hermetic current sensor flip-chip bonding CDFN06 type package structure in accordance with preferred embodiment 1 of the present invention;
fig. 7 is a cross-sectional view (C-C direction) of a hermetic current sensor flip-chip bonding CDFN06 type package structure in accordance with preferred embodiment 1 of the present invention.
In the figure:
1. a ceramic housing base; 11. leading out the terminal; 12. an energizing conductor; 13. a metal pad; 14. a sealing ring; 15. silver solder; 2. a Hall chip; 21. solder bumps; 22. a Hall element; 3. underfill adhesive; 4. and (7) a cover plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
As shown in fig. 1 to 3, a hermetic current sensor flip-chip bonding 1.27mm pitch CDFN06 type package structure according to preferred embodiment 1 of the present invention comprises: the device comprises a ceramic shell base 1, a Hall chip 2, underfill 3 and a cover plate 4; the bottom of the ceramic shell base 1 is provided with a leading-out end 11, a core cavity of the ceramic shell base 1 is internally provided with an electrified conductor 12 and a metal pad 13, the top of the ceramic shell base 1 is provided with a sealing ring 14, the electrified conductor 12 is welded with the corresponding leading-out end 11 through silver solder 15 to form a low-resistance electrified passage, and the metal pad 13 is welded with the leading-out end 11 of the ceramic shell base 1 through the silver solder 15 to form a one-to-one corresponding electrical interconnection passage; the Hall element 22 on the Hall chip 2 is reversely buckled in the central area of the current path of the electrified conductor 12, and the solder salient point 21 of the Hall chip 2 is welded with the metal pad 13 of the ceramic shell base 1 through high-temperature reflow soldering to form electrical interconnection; the cover plate 4 is welded with the sealing ring 14 of the ceramic shell base 1 through a parallel seam welding process to form an airtight sealing structure. The reversed hall chip 2 and the solder bumps 21 thereon are filled with the underfill 3.
In order to facilitate understanding of the above-described technical aspects of the present invention, the above-described technical aspects of the present invention will be described in detail below in terms of specific usage.
In the specific use case, the adhesive is applied,
example 1: a CDFN06 type high temperature co-fired alumina ceramic packaging structure with 1.27mm pitch for air-tight current sensor flip-chip bonding is as follows:
firstly, a multilayer green ceramic membrane with the alumina content of 90-94% is adopted to print a pattern and a green ceramic part manufactured by filling holes through tungsten paste with the thickness of 3-50 mu m, the green ceramic part is co-fired at high temperature to manufacture a mature ceramic part, then the mature ceramic part is brazed with a sealing ring 14 which is prepared by wet etching and is provided with a C19400 copper alloy with the thickness of 0.20mm and a pitch leading-out end 11, a current conductor 12 with the thickness of 0.40mm, a metal pad 13 with the thickness of 0.40mm and 4J80 with a Bag72Cu silver solder 15 with the thickness of 20-100 mu m on the corresponding part of the mature ceramic part, and then the ceramic shell base is prepared after electroplating a nickel layer with the thickness of 1.3-8.9 mu m and a gold layer with the thickness of 1.3-5.7 mu m; secondly, reversely buckling the Hall chip 2 with the thickness of 0.20-0.60 mm in a core cavity of a base of the ceramic shell, wherein copper column tin cap type solder bumps 21 with the diameter of 120 microns and the height of 120 microns on the chip correspond to metal bonding pads 13 of the base 1 of the ceramic shell one by one and are connected by high-temperature reflow soldering at about 260 ℃;
then, cleaning the ceramic shell base 1 assembled with the chip by using oxygen microwave plasma, filling the Hall chip by using HYSOL FP4451TD filling glue, and curing;
and finally, sealing the 4J80 cover plate 4 with the thickness of 0.10mm and the sealing ring 14 with the height of 0.30mm by a parallel seam welding process, and marking and detecting the air tightness to be qualified to finish the packaging.
In order to facilitate understanding of the above-described technical aspects of the present invention, the above-described technical aspects of the present invention will be described in detail below in terms of specific usage.
In the specific use case, the adhesive is applied,
in summary, by means of the above technical scheme of the present invention, the low resistance energizing path is formed by welding the energizing conductor 12 made of low resistivity with the corresponding leading-out terminal 11 through the silver solder 15, so that the problem of heat dissipation power is solved; the welding height of the solder bump 21 of the flip-chip Hall chip 2 and the metal pad 13 of the ceramic shell base 1 reaches the minimum, and the Hall element 22 of the Hall chip 2 is buckled in the central area of the current path of the electrified conductor 12 on the ceramic shell base 1, so that the distance between the Hall element 22 and the electrified conductor 12 is greatly reduced, and the current sensing precision and the electrical interconnection between the Hall chip and the electrified conductor of the ceramic shell base are solved; the non-magnetic material is adopted to manufacture the metal parts of the ceramic shell base, so that the safety problems of motor discharge and even short circuit caused by the fact that scrap iron is easily adsorbed on the ceramic shell base and the cover plate manufactured by the conventional 4J42 or 4J29 of the current sensor are solved; meanwhile, the sealing ring 14 of the ceramic shell base 1 and the cover plate 4 form an airtight sealing structure, so that the problems that the existing plastic packaging current sensor is poor in use reliability, short in service life and even ineffective due to moisture absorption in a humid environment, low-pressure expansion in use in a space environment and the like are solved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (3)
1. An airtight current sensor flip-chip welding packaging structure comprises a ceramic shell base (1), a Hall chip (2), bottom filling glue (3) and a cover plate (4); ceramic case base (1) has and draws forth end (11), circular telegram conductor (12), metal pad (13), seal ring (14) and silver brazing filler metal (15), its characterized in that: the leading-out terminal (11) and the electrified conductor (12) are brazed on the ceramic shell base (1) through silver brazing filler metal (15) and form a low-resistance conducting path; the Hall chip (2) is provided with a solder bump (21) and a Hall element (22), the solder bump (21) is reversely buckled on a metal pad (13) and an electrified conductor (12) of the ceramic shell base (1), and the Hall chip (2) and the metal pad (13) are welded to form one-to-one corresponding interconnection through high-temperature backflow; the Hall chips (2) and the like are filled with underfill (3); the cover plate (4) is welded with a sealing ring (14) of the ceramic shell (1) through laser welding or parallel seam welding to form an airtight sealing structure.
2. The hermetic current sensor flip-chip package structure according to claim 1, wherein: the leading-out end (11), the metal pad (13) and the sealing ring (14) are brazed with the ceramic shell base (1) through silver brazing filler metal (15), the electrified conductor (12) is directly brazed on the corresponding leading-out end (11), and the electrified conductor (12) and the metal pad (13) are coplanar.
3. The hermetic current sensor flip-chip package structure according to claim 1, wherein: the Hall chip (2) is reversely buckled on a metal bonding pad (13) and an electric conductor (12) of the ceramic shell base (1), the Hall element (22) strides over the electrified conductor (12), and the solder bumps (21) are mutually connected with the metal bonding pads (13) in a one-to-one correspondence manner through high-temperature backflow; the Hall chip (2) and the solder bumps (21) thereof, the bottom of the ceramic shell base (1) and the current-carrying conductors (12) thereof, and the metal pads (13) are filled with underfill (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127071.3A CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127071.3A CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111370572A true CN111370572A (en) | 2020-07-03 |
| CN111370572B CN111370572B (en) | 2023-11-10 |
Family
ID=71206438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010127071.3A Active CN111370572B (en) | 2020-02-28 | 2020-02-28 | Reverse buckling welding packaging structure of airtight current sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111370572B (en) |
Citations (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4048670A (en) * | 1975-06-30 | 1977-09-13 | Sprague Electric Company | Stress-free hall-cell package |
| JPH0634272U (en) * | 1992-10-12 | 1994-05-06 | 株式会社三協精機製作所 | Hall element |
| JPH10256413A (en) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Semiconductor package |
| JP2000252545A (en) * | 1999-02-25 | 2000-09-14 | Hitachi Cable Ltd | Hall sensor |
| JP2001102492A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Wiring board and mounting structure thereof |
| EP1271159A2 (en) * | 2001-06-15 | 2003-01-02 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US6528351B1 (en) * | 2001-09-24 | 2003-03-04 | Jigsaw Tek, Inc. | Integrated package and methods for making same |
| US6580159B1 (en) * | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| US20070184579A1 (en) * | 2006-02-08 | 2007-08-09 | Jung-Tang Huang | Method of fabrication on high coplanarity of copper pillar for flip chip packaging application |
| JP2009076588A (en) * | 2007-09-19 | 2009-04-09 | Dainippon Printing Co Ltd | Sensor package and its manufacturing method |
| CN101943715A (en) * | 2009-07-07 | 2011-01-12 | 成都芯源系统有限公司 | Hall effect current sensor and current detection method |
| CN102236042A (en) * | 2010-04-08 | 2011-11-09 | 英飞凌科技股份有限公司 | Magnetic field current sensors |
| US20120279077A1 (en) * | 2011-05-05 | 2012-11-08 | Honeywell International Inc. | Systems and methods for three-axis sensor chip packages |
| US20130181304A1 (en) * | 2012-01-16 | 2013-07-18 | Allegro Microsystems, Inc. | Methods and apparatus for magnetic sensor having non-conductive die paddle |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN103928409A (en) * | 2014-03-17 | 2014-07-16 | 江苏省宜兴电子器件总厂 | Integrated circuit inverting welding air impermeability packaging structure |
| CH707687A1 (en) * | 2013-03-08 | 2014-09-15 | Melexis Technologies Nv | Current sensor. |
| CN105428321A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell structure for inverted installation of hermetic chip |
| CN205248252U (en) * | 2015-12-23 | 2016-05-18 | 中国电子科技集团公司第十三研究所 | Gas tightness chip flip -chip installation is with ceramic pad array shell structure |
| CN105870071A (en) * | 2016-06-28 | 2016-08-17 | 中国电子科技集团公司第十三研究所 | Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell |
| CN106229301A (en) * | 2016-08-01 | 2016-12-14 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness surface attaching type digital isolator encapsulating structure |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| CN106847772A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第五十八研究所 | For the flux-free flip chip method of ceramic package |
| US20170222131A1 (en) * | 2016-01-29 | 2017-08-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
| US20170271244A1 (en) * | 2016-03-21 | 2017-09-21 | Texas Instruments Incorporated | Lead frame with solder sidewalls |
| CN108831869A (en) * | 2018-06-06 | 2018-11-16 | 江苏省宜兴电子器件总厂有限公司 | A kind of method of common burning porcelain shell pad preparation |
| CN208636360U (en) * | 2018-04-25 | 2019-03-22 | 长电科技（宿迁）有限公司 | A kind of current sensor package structure |
| CN109599485A (en) * | 2019-01-28 | 2019-04-09 | 意瑞半导体（上海）有限公司 | The lead frame and sensor of Hall current sensor |
-
2020
- 2020-02-28 CN CN202010127071.3A patent/CN111370572B/en active Active
Patent Citations (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4048670A (en) * | 1975-06-30 | 1977-09-13 | Sprague Electric Company | Stress-free hall-cell package |
| JPH0634272U (en) * | 1992-10-12 | 1994-05-06 | 株式会社三協精機製作所 | Hall element |
| JPH10256413A (en) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Semiconductor package |
| JP2000252545A (en) * | 1999-02-25 | 2000-09-14 | Hitachi Cable Ltd | Hall sensor |
| JP2001102492A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Wiring board and mounting structure thereof |
| US6580159B1 (en) * | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
| EP1271159A2 (en) * | 2001-06-15 | 2003-01-02 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| US6528351B1 (en) * | 2001-09-24 | 2003-03-04 | Jigsaw Tek, Inc. | Integrated package and methods for making same |
| US20070184579A1 (en) * | 2006-02-08 | 2007-08-09 | Jung-Tang Huang | Method of fabrication on high coplanarity of copper pillar for flip chip packaging application |
| JP2009076588A (en) * | 2007-09-19 | 2009-04-09 | Dainippon Printing Co Ltd | Sensor package and its manufacturing method |
| CN101943715A (en) * | 2009-07-07 | 2011-01-12 | 成都芯源系统有限公司 | Hall effect current sensor and current detection method |
| US20110006763A1 (en) * | 2009-07-07 | 2011-01-13 | Anthonius Bakker | Hall effect current sensor system and associated flip-chip packaging |
| CN102236042A (en) * | 2010-04-08 | 2011-11-09 | 英飞凌科技股份有限公司 | Magnetic field current sensors |
| US20120279077A1 (en) * | 2011-05-05 | 2012-11-08 | Honeywell International Inc. | Systems and methods for three-axis sensor chip packages |
| US20130181304A1 (en) * | 2012-01-16 | 2013-07-18 | Allegro Microsystems, Inc. | Methods and apparatus for magnetic sensor having non-conductive die paddle |
| CH707687A1 (en) * | 2013-03-08 | 2014-09-15 | Melexis Technologies Nv | Current sensor. |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN103928409A (en) * | 2014-03-17 | 2014-07-16 | 江苏省宜兴电子器件总厂 | Integrated circuit inverting welding air impermeability packaging structure |
| CN105428321A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell structure for inverted installation of hermetic chip |
| CN205248252U (en) * | 2015-12-23 | 2016-05-18 | 中国电子科技集团公司第十三研究所 | Gas tightness chip flip -chip installation is with ceramic pad array shell structure |
| US20170222131A1 (en) * | 2016-01-29 | 2017-08-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
| US20170271244A1 (en) * | 2016-03-21 | 2017-09-21 | Texas Instruments Incorporated | Lead frame with solder sidewalls |
| CN105870071A (en) * | 2016-06-28 | 2016-08-17 | 中国电子科技集团公司第十三研究所 | Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell |
| CN106229301A (en) * | 2016-08-01 | 2016-12-14 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness surface attaching type digital isolator encapsulating structure |
| CN106847772A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第五十八研究所 | For the flux-free flip chip method of ceramic package |
| CN106653999A (en) * | 2016-12-22 | 2017-05-10 | 上海南麟电子股份有限公司 | Single-chip Hall current sensor and preparation method thereof |
| CN208636360U (en) * | 2018-04-25 | 2019-03-22 | 长电科技（宿迁）有限公司 | A kind of current sensor package structure |
| CN108831869A (en) * | 2018-06-06 | 2018-11-16 | 江苏省宜兴电子器件总厂有限公司 | A kind of method of common burning porcelain shell pad preparation |
| CN109599485A (en) * | 2019-01-28 | 2019-04-09 | 意瑞半导体（上海）有限公司 | The lead frame and sensor of Hall current sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111370572B (en) | 2023-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102341899B (en) | Leadless array plastic package with various IC packaging configurations | |
| CN108461457B (en) | Semiconductor device and method for manufacturing the same | |
| US20100270667A1 (en) | Semiconductor package with multiple chips and substrate in metal cap | |
| EP2903024B1 (en) | Contact element, power semiconductor module and method of fabricating same | |
| CN206282838U (en) | The integrated encapsulation structure of passive device and active device | |
| US20140264798A1 (en) | Packaged Device Comprising Non-Integer Lead Pitches and Method of Manufacturing the Same | |
| US20150262965A1 (en) | Wire bonding method and structure | |
| JP4886104B2 (en) | Power semiconductor packaging package with ball grid array | |
| CN109273371A (en) | A kind of encapsulating structure of power semiconductor part and packaging method | |
| US6075281A (en) | Modified lead finger for wire bonding | |
| CN111370373A (en) | Airtight surface mounting type current sensor packaging structure | |
| CN111370572A (en) | Encapsulation structure is welded to gas tightness current sensor back-off | |
| CN116741713A (en) | Chip packaging structure and packaging method | |
| CN212113705U (en) | Power semiconductor module | |
| CN105355567B (en) | Two-sided etching water droplet bump package structure and its process | |
| CN105206594B (en) | One side etches water droplet bump package structure and its process | |
| CN209232767U (en) | A kind of novel semi-conductor encapsulating structure | |
| US20120326304A1 (en) | Externally Wire Bondable Chip Scale Package in a System-in-Package Module | |
| CN206789535U (en) | A kind of fan-out package structure of power electronic devices | |
| CN216872012U (en) | Non-magnetic ceramic packaging body | |
| CN106298749B (en) | Light emitting diode, electronic device and manufacturing method thereof | |
| CN105609620B (en) | A kind of preparation method of LED light engine encapsulating structure | |
| CN218647932U (en) | Power semiconductor module of ultrasonic welding lead frame | |
| CN214588813U (en) | Packaging structure of reverse-bending internal insulation product | |
| CN115732450B (en) | Novel high-density packaging structure of power module and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 313000 South the Taihu Lake Electronic Information Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Applicant after: Zhejiang Dongci Technology Co.,Ltd. Address before: 313000 Huaikan Electronic Industrial Park, Changxing County, Huzhou City, Zhejiang Province Applicant before: ZHEJIANG S-SQUARE PRECISELY ELECTRONIC FACTORY CO.,LTD. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |