CN111370373A - Airtight surface mounting type current sensor packaging structure - Google Patents
Airtight surface mounting type current sensor packaging structure Download PDFInfo
- Publication number
- CN111370373A CN111370373A CN202010127060.5A CN202010127060A CN111370373A CN 111370373 A CN111370373 A CN 111370373A CN 202010127060 A CN202010127060 A CN 202010127060A CN 111370373 A CN111370373 A CN 111370373A
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- Prior art keywords
- ceramic
- hall chip
- current sensor
- ceramic shell
- bonding
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 56
- 238000007789 sealing Methods 0.000 claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 14
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 239000000696 magnetic material Substances 0.000 abstract description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006335 epoxy glue Polymers 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
The invention relates to an airtight surface mounting type current sensor packaging structure which comprises a ceramic shell base, a Hall chip, insulating bonding glue, a bonding lead, a power-on conductor, welding solder, insulating filling glue, a ceramic cover plate and sealing solder, wherein the Hall chip is arranged on the ceramic shell base; the invention solves the problem that the on-resistance of the current path of the base of the existing high-temperature co-fired ceramic shell is difficult to reach the milliohm level so as to meet the requirement of the bearing capacity of a few amperes to a few tens amperes; the safety problems that the motor is discharged and even short-circuited and the like caused by the fact that the common ceramic shell base is easy to absorb scrap iron due to the adoption of soft magnetic materials are solved; meanwhile, the problems that the existing plastic surface-mounted current sensor is poor in reliability and short in service life and even fails to work in severe environments such as aerospace and the like are solved.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to an airtight surface mounting type current sensor packaging structure.
Background
The existing current sensor is basically packaged in a plastic package small shape (such as SOIC08 and the like), a lead material is copper alloy, a molding compound is an epoxy plastic package material (EMC), and the existing current sensor has the defects of limited use environment temperature and relatively short service life; if the airtight surface mounting type current sensor adopts the conventional alumina high-temperature co-fired ceramic package (such as CDFN06, CFP08 and the like), the lead resistance of the tungsten metalized lead and the lead is between several milliohms and dozens of hundreds of milliohms, and the lead is difficult to bear the large current of dozens of amperes; the soft magnetic material iron nickel or iron nickel cobalt alloy (4J 42 or 4J29) pin and cover plate material are magnetic in a magnetic field and easy to adsorb scrap iron, and the like, which easily causes the problem of motor discharge and even short circuit to cause safety accidents.
In view of the above problems, no effective solution has been proposed.
Disclosure of Invention
The invention aims to solve the technical problems that a Hall chip is not redesigned, the problems of low resistance, residual magnetism, magnetic hysteresis and the like of a power-on passage are solved, the use reliability and the service life of a current sensor are ensured, and therefore, an air-tightness, low resistance and non-magnetic ceramic packaging structure is provided for the current sensor and the like.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention relates to an airtight surface mounting type current sensor packaging structure which comprises a ceramic shell base, a Hall chip, insulating bonding glue, a bonding lead, a power-on conductor, welding solder, insulating filling glue, a ceramic cover plate and sealing solder, wherein the Hall chip is arranged on the ceramic shell base; the ceramic shell base is provided with a nonmagnetic alloy leading-out end, a sealing ring, a bonding finger and an electrode, and is brazed on the ceramic, and the electrode and the leading-out end are communicated into a whole; the Hall chip is arranged in a core cavity of the ceramic shell base through insulating adhesive, and a bonding pad of the Hall chip and a bonding finger of the ceramic shell base are interconnected through a bonding lead; the electrified conductor is positioned above the Hall chip, strides over the Hall element of the Hall chip, and is welded with the electrode of the ceramic shell base through welding solder to form a current path, and the electrified conductor and the Hall chip are fixed by insulating filling glue; and finally, the ceramic shell base is sealed by melting at high temperature through the ceramic cover plate and the sealing solder to form an airtight sealing structure. The invention solves the problem that the on-resistance of the current path of the base of the existing high-temperature co-fired ceramic shell is difficult to reach the milliohm level so as to meet the requirement of the bearing capacity of a few amperes to a few tens amperes; the safety problems that the pins of the common ceramic shell base are easy to adsorb scrap iron to cause the discharge of a motor and even short circuit due to the adoption of soft magnetic materials (such as 4J29 iron-nickel-cobalt alloy or 4J42 iron-nickel alloy) are solved; meanwhile, the problems that the existing plastic surface-mounted current sensor is poor in reliability and short in service life and even fails in severe environments such as aerospace and the like are solved, and the device can stably work in the severe environments for a long time.
The invention has the beneficial effects that: the problem of current sensor package of the present gas tightness surface mounting type current sensor is with the on-resistance of high temperature cofired pottery shell current route hardly reach the milliohm level in order to satisfy several amperes to tens of amperes bearing capacity is solved, solve the pin of general ceramic package and adopt soft magnetic material (such as 4J29 iron nickel cobalt alloy or 4J42 iron nickel alloy) and easily adsorb iron fillings and cause the safe problem such as motor discharge even short circuit, the insulating bonding adhesive of hall chip is epoxy glue and core chamber no metallization layer with the magnetic resistance effect reduce to minimum, solve the problem that present plastic surface mounting type current sensor is poor in service reliability and short-lived even inefficacy under adverse circumstances such as aerospace simultaneously.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a top view of a hermetically sealed CDFN06 type current sensor package in accordance with an embodiment of the present invention;
FIG. 2 is a bottom view of a hermetic CDFN06 type current sensor package structure according to an embodiment of the present invention;
FIG. 3 is a top view of a hermetic CDFN06 type current sensor package structure before cover plate sealing by fusion according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a hermetic CDFN06 type current sensor package structure (A-A direction) according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a hermetic CDFN06 type current sensor package structure (B-B orientation) in accordance with an embodiment of the present invention;
in the figure:
1. a ceramic housing base; 11. leading out the terminal; 12. a seal ring; 13. a core cavity; 14. a bonding finger; 15. an electrode; 16. silver solder; 2. a Hall chip; 21. a pad; 22. a Hall element; 3. insulating adhesive glue; 4. an energizing conductor; 5. bonding a lead; 6. a ceramic cover plate; 7. welding solder; 8. sealing the solder; 9. and (5) insulating filling glue.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
As shown in fig. 1 to 3, a hermetic CDFN06 type current sensor package structure according to an embodiment of the present invention includes: the device comprises a ceramic shell base 1, a Hall chip 2, insulating bonding glue 3, a current-carrying conductor 4, a bonding lead 5, a ceramic cover plate 6, a welding solder 7, a sealing solder 8 and insulating filling glue 9; the bottom of the ceramic shell base 1 is provided with a leading-out terminal 11, the top of the ceramic shell base 1 is provided with a sealing ring 12, and a core cavity 13 of the ceramic shell base 1 is internally provided with a bonding finger 14 and an electrode 15; the Hall chip 2 comprises a bonding pad 21 and a Hall element 22, and is arranged in a core cavity 13 of the ceramic shell base 1 through an insulating bonding glue 3; the Hall chip 2 is connected with a bonding finger 14 of the ceramic shell base 1 through a bonding lead 5; the current-carrying conductor 4 is welded with the electrode 15 of the ceramic shell base 1 through the welding solder 7 to form a large-current path; the ceramic cover plate 6 is fused with the sealing ring 12 on the ceramic shell base 1 through the sealing welding flux 8 to form the core cavity 13 into a sealing cavity.
In order to facilitate understanding of the above-described technical aspects of the present invention, the above-described technical aspects of the present invention will be described in detail below in terms of specific usage.
In the specific use case, the adhesive is applied,
example (b): a CDFN06 type current sensor packaging structure with 1.27mm air tightness and a pitch is as follows:
firstly, preparing a CDFN06 type ceramic shell base 1 with 1.27mm pitch by using an alumina multilayer high-temperature co-fired ceramic process; the leading-out end 11 with the thickness of 0.20mm and the electrode 15 with the thickness of 0.80mm are made of nonmagnetic TFe2.5 copper alloy through die punching or wet etching, Bag72Cu silver solder 16 with the thickness of 50 mu m is used for soldering on the corresponding part on the ceramic shell base 1, and the metallization of the ceramic shell base and the surface of a metal part are electroplated with 1.3-8.9 mu m nickel-1.3-5.7 mu m gold layers; 0.50 ceramic cover plate 6 adopts Al with bending strength more than 350MPa2O3Printing a sealing metalized area with the thickness of 10-50 microns by using metal paste such as porcelain, tungsten or tungsten-molybdenum, and the like, wherein the size of the sealing metalized area is 4.20mm × 4.80mm × 0.50.50 mm, and performing high-temperature co-firing to prepare the ceramic/tungsten/molybdenum/tungsten;
secondly, the Hall chip 2 is installed in a core cavity 13 of a CDFN06 type ceramic shell base 1 with 1.27mm pitch through 353ND insulating adhesive 3; the bonding pad 21 of the Hall chip 2 is interconnected with the bonding finger 14 of the CDFN06 type ceramic shell base 1 with the pitch of 1.27mm by an ultrasonic wedge welding process through a silicon-aluminum bonding lead 5 with the diameter of 25 mu m or more;
then, the TFe2.5 copper alloy current-carrying conductor 4 with the thickness of 0.40mm is welded with the electrode 15 with the thickness of 0.80mm of the ceramic shell base 1 through Au80Sn20 welding solder 7 with the thickness of 15-50 μm;
then, the electrified conductor 4 and the Hall chip 2 are fixed by FP4531 insulation filling glue 9;
finally, the 0.50mm thick 4.20mm × 4.80.80 mm alumina ceramic cover plate 6 is sealed by a 50 μm thick Au80Sn20 sealing solder 8 with the sealing ring 12 on the ceramic case base 1 to make the core cavity 13 a sealed cavity.
In summary, according to the above technical solution of the present invention, the hall chip is sealed in the sealing cavity formed by the nonmagnetic ceramic casing base 1, the ceramic cover plate 6 and the sealing solder 8; the leading-out terminal 11 and the electrode 15 of the ceramic shell base 1 are made of copper alloy, the leading-out terminal 11 and the electrode 15 are brazed through silver solder 16, the copper alloy electrified conductor 4 and the electrode 15 are welded through welding solder 7, the resistance of a current path is below 1.2m omega, and the problem of heating of the current path formed by a common ceramic shell base is solved; the insulating adhesive 3 is 353ND epoxy glue, and the core cavity 13 of the ceramic shell base 1 is alumina which is nonmetal, so that the magnetic resistance effect is reduced to the minimum; the copper alloy electrified conductor 4 is tightly attached to the surface of the Hall element 22 of the Hall chip 2, so that the problem that the current sensor does not use a magnetic core but does not reduce the sensing precision is solved; and finally, the aluminum oxide ceramic shell base 1 is sealed by melting through the ceramic cover plate 6 and the sealing ring 12 to form an air-tight sealing structure, so that the device can stably work in a severe environment for a long time.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (3)
1. The utility model provides an air tightness surface mounting type current sensor packaging structure, packaging structure includes ceramic casing base (1), hall chip (2), insulating bonding glue (3), circular telegram conductor (4), bonding lead (5), ceramic cover plate (6), welding solder (7), sealing solder (8) and insulating filling glue (9), and ceramic casing base (1) has nonmagnetic alloy to draw forth end (11), sealing ring (12), core chamber (13), bonding finger (14) and electrode (15), its characterized in that: the Hall chip (2) is arranged in a core cavity (13) of the ceramic shell base (1) through insulating adhesive glue (3), and a bonding pad (21) of the Hall chip (2) is connected with a bonding finger (14) of the ceramic shell base (1) through a bonding lead (5); the electrified conductor (4) is welded with the electrode (15) through welding solder (7) and is mutually fixed with the Hall chip (2) through insulating filling glue (9); the ceramic cover plate (6) is sealed by sealing welding flux (8) and a sealing ring (12) to form a sealing cavity.
2. The hermetic surface-mount current sensor package structure of claim 1, wherein: the core cavity substrate of the ceramic housing base (1) is free of metallization layers; the electrode (15) and the leading-out terminal (11) are integrated and brazed on the ceramic shell base (1).
3. The hermetic surface-mount current sensor package structure of claim 1, wherein: the electrified conductor (4) is positioned above the Hall chip (2) and spans over the Hall element (22) of the Hall chip (2), and the electrified conductor (4) is welded with the electrode (15) through welding solder (7) and is fixed with the Hall chip (2) through insulating filling glue (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127060.5A CN111370373A (en) | 2020-02-28 | 2020-02-28 | Airtight surface mounting type current sensor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127060.5A CN111370373A (en) | 2020-02-28 | 2020-02-28 | Airtight surface mounting type current sensor packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111370373A true CN111370373A (en) | 2020-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010127060.5A Pending CN111370373A (en) | 2020-02-28 | 2020-02-28 | Airtight surface mounting type current sensor packaging structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN111370373A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113242685A (en) * | 2021-05-18 | 2021-08-10 | 中国电子科技集团公司第五十八研究所 | Air-tight magnetic memory packaging structure and preparation method thereof |
| CN113341199A (en) * | 2021-06-04 | 2021-09-03 | 华北电力大学 | High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof |
| CN114400282A (en) * | 2021-12-30 | 2022-04-26 | 福建闽航电子有限公司 | Non-magnetic ceramic packaging body |
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| JPH06334306A (en) * | 1993-05-24 | 1994-12-02 | Matsushita Electric Ind Co Ltd | Manufacture of ceramic circuit substrate |
| JPH10163355A (en) * | 1996-11-29 | 1998-06-19 | Kyocera Corp | Package for housing semiconductor device |
| JPH10256413A (en) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Semiconductor package |
| JP2000012728A (en) * | 1998-06-19 | 2000-01-14 | Nec Kansai Ltd | Ceramic package and ceramic package type electronic component |
| JP2001102492A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Wiring board and mounting structure thereof |
| JP2001156202A (en) * | 1999-11-24 | 2001-06-08 | Murata Mfg Co Ltd | Ceramic multilayer substrate |
| JP2002151616A (en) * | 2000-11-08 | 2002-05-24 | Toshiba Corp | Hybrid semiconductor device |
| JP2004071670A (en) * | 2002-08-02 | 2004-03-04 | Fuji Photo Film Co Ltd | Ic package, connecting structure and electronic apparatus |
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-
2020
- 2020-02-28 CN CN202010127060.5A patent/CN111370373A/en active Pending
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| Title |
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| 上海市机械制造工艺研究所有限公司: "《金相分析原理及技术》", 上海科学技术文献出版社, pages: 846 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113242685A (en) * | 2021-05-18 | 2021-08-10 | 中国电子科技集团公司第五十八研究所 | Air-tight magnetic memory packaging structure and preparation method thereof |
| CN113341199A (en) * | 2021-06-04 | 2021-09-03 | 华北电力大学 | High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof |
| CN113341199B (en) * | 2021-06-04 | 2022-05-17 | 华北电力大学 | High-temperature current sensor based on low-temperature co-fired ceramic technology and application and method thereof |
| CN114400282A (en) * | 2021-12-30 | 2022-04-26 | 福建闽航电子有限公司 | Non-magnetic ceramic packaging body |
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Application publication date: 20200703 |
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