JP2742618B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit,
A glass member for sealing is applied in advance on the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wired. After the bond connection, the semiconductor element is hermetically sealed inside by fusing and integrating a sealing glass member attached to each of the insulating base and the lid.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
% Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt%
Ni-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their high magnetic permeability and low electric conductivity.

That is, Kovar and 42Alloy are made of only ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (Co), and have high magnetic permeability of 250 to 700 (CGS). Therefore, when a current flows through the external lead terminal made of Kovar or 42Alloy, a large self-inductance is generated in the external lead terminal in proportion to the magnetic permeability, which induces a back electromotive force to become noise, and the noise becomes a semiconductor. The conductivity of Kovar or 42Alloy is 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to minimize the noise generated at the external lead terminals and the signal attenuation at the external lead terminals to minimize the semiconductor device housed therein. An object of the present invention is to provide a package for housing a semiconductor element capable of reliably inputting / outputting a signal and allowing a semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention relates to a package for housing semiconductor elements, wherein external lead terminals are attached via a glass member to an insulating container having a space for housing semiconductor elements therein. The insulating container is a forsterite-based sintered body or a zirconia-based sintered body, and the outer lead terminals are magnetic permeability of 200 (GCS) or less, coefficient of thermal expansion is 100 to 110 × 10 ^-7 / ° C, and conductivity is 10% (IAC
S) With the above metals, the glass member is silica 60.0 to 70.0Wt
%, At least one of sodium and potassium oxides 1
It is characterized by being formed of glass comprising 0.0 to 20.0 Wt% and 5.0 to 15.0 Wt% of barium oxide.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating base 1 and the lid 2 are made of a forsterite-based sintered body or a zirconia-based sintered body, and are placed in a press die having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. Raw material powders such as magnesia (MgO) and silica (SiO ₂ ) for stellite sintered bodies, and raw material powders such as zirconium oxide (ZrO ₂ ) and yttria (Y ₂ O ₃ ) for zirconia sintered bodies And molding by applying a constant pressure.
It is manufactured by firing at a temperature of 00 ° C.

The forsterite-based sintered body or zirconia-based sintered body forming the insulating base 1 and the lid 2 has a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and a sealing glass member described later. There is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the thermal expansion coefficient of

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica of 60.0 to 70.0 Wt%,
It is made of glass formed of at least one of sodium and potassium oxides of 10.0 to 20.0 Wt% and barium oxide of 5.0 to 15.0 Wt%. The above components are weighed and mixed so as to have predetermined values, and the mixed powder is mixed. Is manufactured by heating and melting at a temperature of 1300 to 1400 ° C. The glass member 6 has a coefficient of thermal expansion of 90 to 100 × 10 ⁻⁷ / ° C.

The sealing glass member 6 has a thermal expansion coefficient of 90 to 90.
Since it is 100 × 10 ⁻⁷ / ° C. and approximates the thermal expansion coefficients of the insulating base 1 and the lid 2, the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is When the semiconductor element 4 in the insulating container 3 is air-tightly sealed by heat melting and integrating, the difference in the thermal expansion coefficient between the insulating base 1 and the lid 2 and the sealing glass member 6 is caused. Is hardly generated due to the heat, the insulating base 1 and the lid 2
Can be firmly joined via the sealing glass member 6.

The sealing glass member 6 is made of silica (SiO ₂ ) of 60.0%.
If it is less than Wt%, the crystallization of the glass proceeds and it becomes difficult to hermetically seal the insulating container 3, and if it exceeds 70.0Wt%, the thermal expansion of the glass becomes small, and the thermal expansion of the insulating base 1 and the lid 2 is reduced. 60.0 to 70.0 Wt for silica (SiO ₂ )
%.

In addition, if the oxide of sodium and potassium is less than 10.0 Wt%, the melting temperature of the glass at the time of manufacturing the glass is greatly increased, and the workability is significantly deteriorated. As a result, the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so that oxides of sodium and potassium are limited to the range of 10.0 to 20.0 Wt%.

When barium oxide (BaO) is less than 5.0 Wt%, the chemical resistance of the glass is deteriorated, and the reliability of hermetic sealing of the insulating container 3 is greatly reduced. Barium oxide (BaO) is limited to the range of 5.0 to 15.0 Wt% because it becomes difficult to hermetically seal the insulating container 3.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to the glass composed of the above-described components, by employing a conventionally known thick-film technique, by using a conventionally known thick-film technique. It is formed on the opposite main surface.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 via a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 is made of a non-magnetic metal such as copper (Cu).
Chromium-iron alloy (Cr-Fe alloy) on the outer surface of a core made of
Or plate-like Invar alloy (36.5Wt
% Ni-63.5Wt% Fe alloy) made of copper (Cu), which is a non-magnetic metal, joined to the upper and lower surfaces.
It is made of a conductive material having a conductivity of not more than 200 (CGS), a conductivity of not less than 10% (IACS) and a coefficient of thermal expansion of 100 to 110 × 10 ⁻⁷ / ° C.

The external lead terminal 5 has a magnetic permeability of 200 (CGS) or less, and since the magnetic permeability is low, a large self-inductance is generated in the external lead terminal 5 even when a current flows through the external lead terminal 5. As a result, the noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor element 4 housed therein can always operate normally.

The external lead terminal 5 has a conductivity of 10% (IAC
S) This is the above, and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high. Even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 Signals can be always sent and received between the power supply and the external electric circuit in a stable and reliable manner.

At the same time, since the electrical conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 is reduced, the electrical resistance of the external lead terminal 5 can be suppressed low. An electric signal supplied from an external electric circuit can be accurately input to the semiconductor element 4 housed therein with the attenuation being minimized.

Further, the external lead terminal 5 has a coefficient of thermal expansion of 10
Since the thermal expansion coefficient is 0 to 110 × 10 ⁻⁷ / ° C. and is close to the thermal expansion coefficient of the glass member for sealing 6, the external lead terminal 5 is used between the insulating base 1 and the lid 2. When fixing the external lead terminal 5 and the sealing glass member 6, no thermal stress is generated between the external lead terminal 5 and the sealing glass member 6 due to a difference in thermal expansion coefficient between the external lead terminal 5 and the sealing glass member 6. 6, it is also possible to fix firmly.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the semiconductor element housing package of the present invention, the insulating container for housing the semiconductor element is a forsterite-based sintered body or a zirconia-based sintered body, and the external lead terminals have a magnetic permeability of 200 ( CGS), a metal having a conductivity of 10% (IACS) or more and a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and the glass member is made of 60.0 to 70.0 Wt% of silica and at least one of oxides of sodium and potassium. Since the seeds are formed of a glass composed of 10.0 to 20.0 Wt% and barium oxide of 5.0 to 15.0 Wt%, even if a current is applied to the external lead terminals, no large self-inductance is generated in the external lead terminals. The noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor device housed therein can always be normally operated.

Also, the signal propagation speed of the external lead terminal can be made extremely high, and even if the semiconductor element housed in the insulating container is driven at a high speed, the transfer of signals between the semiconductor element and the external electric circuit is stable, and It is possible to make sure.

Furthermore, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The supplied electric signal can be input accurately.

Furthermore, the thermal expansion coefficient of the external lead terminal is close to that of each of the insulating base, the lid and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid. Due to differences in the coefficient of thermal expansion between the insulating substrate and the lid and the sealing glass member, and between the external lead terminals and the sealing glass member even if they are attached and bonded with the sealing glass member. No thermal stress is generated, and it is possible to firmly attach and join all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base, 2 ... Lid 3 ... Insulating container, 5 ... External lead terminal 6 ... Glass member for sealing

Claims (1)

(57) [Claims] 1. A package for storing semiconductor elements, wherein an external lead terminal is attached via a glass member to an insulating container having a space for accommodating a semiconductor element therein. A sintered or zirconia-based sintered body with an external lead terminal having a magnetic permeability of 200 (CGS) or less, a coefficient of thermal expansion of 100 to 110 × 10 ^-7 / ° C, and a conductivity of 10% (IAC
S) With the above metals, the glass member is silica 60.0 to 70.0Wt
%, At least one of sodium and potassium oxides 1
A package for accommodating a semiconductor element, comprising a glass made of 0.0 to 20.0 Wt% and 5.0 to 15.0 Wt% barium oxide.