JP2742617B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit,
A glass member for sealing is applied in advance on the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wired. After the bond connection, the semiconductor element is hermetically sealed inside by fusing and integrating a sealing glass member attached to each of the insulating base and the lid.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
% Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt%
Ni-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their low conductivity.

That is, Kovar and 42Alloy have a conductivity of 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to minimize signal attenuation at an external lead terminal and to surely input / output a signal to / from a semiconductor element housed therein. It is an object of the present invention to provide a semiconductor device housing package that enables normal and stable operation of a semiconductor device over a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention relates to a package for housing semiconductor elements, wherein external lead terminals are attached via a glass member to an insulating container having a space for housing semiconductor elements therein. The insulating container is a forsterite-based sintered body or a zirconia-based sintered body, and the external lead terminals have a coefficient of thermal expansion of 95 to 110.
× 10 ^-7 / ° C, conductivity 12% (IACS) or higher metal, glass 30.0 to 60.0 Wt% silica, lead oxide 20.0 to 40.0 Wt
%, At least one of sodium and potassium oxides 1
It is characterized by being formed of glass of 0.0 to 20.0 Wt%.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating base 1 and the lid 2 are made of a forsterite-based sintered body or a zirconia-based sintered body, and are placed in a press die having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. Raw material powders such as magnesia (MgO) and silica (SiO ₂ ) for stellite sintered bodies, and raw material powders such as zirconium oxide (ZrO ₂ ) and yttria (Y ₂ O ₃ ) for zirconia sintered bodies And molding by applying a constant pressure.
It is manufactured by firing at a temperature of 00 ° C.

The forsterite-based sintered body or zirconia-based sintered body forming the insulating base 1 and the lid 2 has a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and a sealing glass member described later. There is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the thermal expansion coefficient of

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica of 30.0 to 60.0 Wt%,
It is made of glass formed from 20.0 to 40.0 Wt% of lead oxide and at least one of oxides of sodium and potassium, 10.0 to 20.0 Wt%. The above components are weighed and mixed so as to have predetermined values, and the mixed powder is obtained. Is manufactured by heating and melting at a temperature of 1300 to 1400 ° C. The glass member 6 has a coefficient of thermal expansion of 100 to 110 × 10 ⁻⁷ / ° C.

The sealing glass member 6 has a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and is close to the thermal expansion coefficients of the insulating base 1 and the lid 2. The semiconductor element 4 in the insulating container 3 is formed by heating and melting the sealing glass member 6 attached to each
When air-tightly sealing, almost no thermal stress is generated between the insulating base 1 and the lid 2 and the sealing glass member 6 due to the difference in thermal expansion coefficient between the two. And the lid 2 can be firmly joined via the sealing glass member 6.

The sealing glass member 6 is made of silica (SiO ₂ ) of 30.0%.
If it is less than Wt%, the crystallization of the glass proceeds and it becomes difficult to hermetically seal the insulating container 3, and if it exceeds 60.0Wt%, the thermal expansion of the glass becomes small, and the thermal expansion of the insulating base 1 and the lid 2 is reduced. 30.0 to 60.0 Wt for silica (SiO ₂ )
%.

If the lead oxide (PbO) content is less than 20.0 Wt%, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2. If it exceeds 40.0 Wt%, the crystallization of the glass proceeds. Since the hermetic sealing of the insulating container 3 becomes difficult, lead oxide (PbO) is limited to the range of 20.0 to 40.0 Wt%.

If the content of sodium and potassium oxides is less than 10.0 Wt%, the melting temperature of the glass at the time of manufacturing the glass is greatly increased, and the workability is significantly deteriorated. If it exceeds 20.0 Wt%, the chemical resistance of the glass is reduced. Since the reliability of the hermetic sealing of the insulating container 3 is greatly reduced due to deterioration, the oxides of sodium and potassium are limited to the range of 10.0 to 20.0 Wt%.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to the glass composed of the above-described components, by employing a conventionally known thick-film technique, by using a conventionally known thick-film technique. It is formed on the opposite main surface.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 via a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 is made of a non-magnetic metal such as copper (Cu).
Made of nickel-iron alloy (Ni-Fe alloy) joined to the outer surface of a core made of
(IACS) As described above, the conductive material has a coefficient of thermal expansion of 95 to 110 × 10 ⁻⁷ / ° C.

The external lead terminal 5 has an electrical conductivity of 12% (IACS) or more, and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high. Even when the semiconductor element 4 is driven at a high speed, it is possible to always stably and reliably send and receive signals between the semiconductor element 4 and an external electric circuit.

Further, since the electrical conductivity of the external lead terminal 5 is high, the electrical resistance of the external lead terminal 5 can be kept low even if the line width of the external lead terminal 5 is reduced, and as a result, signal attenuation at the external lead terminal 5 is achieved. The electric signal supplied from the external electric circuit can be accurately input to the semiconductor element 4 housed therein with the minimum value.

Further, the external lead terminal 5 has a thermal expansion coefficient of 95 to
The external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6 because it is 110 × 10 ⁻⁷ / ° C. and is close to the thermal expansion coefficient of the sealing glass member 6. In this case, no thermal stress is generated on the external lead terminal 5 and the sealing glass member 6 due to the difference in the coefficient of thermal expansion between the external lead terminal 5 and the sealing glass member 6. It becomes possible to fix firmly.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the package for housing a semiconductor element of the present invention, the insulating container for housing the semiconductor element is a forsterite-based sintered body or a zirconia-based sintered body, and the external lead terminals have a conductivity of 12%. (IACS) or higher, coefficient of thermal expansion 95 to 110 × 1
With a metal of 0 ^-7 / ° C, the glass member is silica 30.0 to 60.0 Wt
%, Lead oxide 20.0 to 40.0 Wt%, at least one kind of sodium potassium oxide made of glass consisting of 10.0 to 20.0 Wt%, the signal propagation speed of the external lead terminal can be made extremely fast, Even if the semiconductor element accommodated in the insulating container is driven at a high speed, it is possible to stably and surely send and receive signals between the semiconductor element and the external electric circuit.

Also, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The provided electric signal can be accurately input.

Further, the thermal expansion coefficient of the external lead terminal approximates the thermal expansion coefficient of each of the insulating base, the lid and the sealing glass member, and sandwiches the external lead terminal between the insulating base and the lid,
Even if each of them is attached and bonded with a sealing glass member, the thermal expansion coefficient is different between the insulating base and the lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is caused by this, and it is possible to firmly attach and join all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Insulating container 5 ... External lead terminal 6 ... Glass member for sealing

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-50-146899 (JP, A) JP-A-53-123080 (JP, A) JP-A-64-5041 (JP, A) JP-A 55-123 100239 (JP, A) JP-A-62-65954 (JP, A) JP-A-63-185318 (JP, U)

Claims (1)

(57) [Claims] 1. A package for storing semiconductor elements, wherein an external lead terminal is attached via a glass member to an insulating container having a space for accommodating a semiconductor element therein. The external lead terminal is a thermal expansion coefficient of 95 to 11
0 × 10 ^-7 / ℃, conductivity 12% (IACS) or more metal, glass member silica 30.0-60.0Wt%, lead oxide 20.0-40.0%
Wt%, at least one of sodium and potassium oxides
A package for housing a semiconductor element, wherein the package is formed of glass of 10.0 to 20.0 Wt%.