JPH03173157A - Package for housing semiconductor element - Google Patents
Package for housing semiconductor elementInfo
- Publication number
- JPH03173157A JPH03173157A JP31272389A JP31272389A JPH03173157A JP H03173157 A JPH03173157 A JP H03173157A JP 31272389 A JP31272389 A JP 31272389A JP 31272389 A JP31272389 A JP 31272389A JP H03173157 A JPH03173157 A JP H03173157A
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- semiconductor element
- lead terminal
- glass member
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 239000011521 glass Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011734 sodium Substances 0.000 claims abstract description 7
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 239000011591 potassium Substances 0.000 claims abstract description 4
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052839 forsterite Inorganic materials 0.000 claims description 5
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 5
- 238000007789 sealing Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 229910000640 Fe alloy Inorganic materials 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 230000000704 physical effect Effects 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 22
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910000833 kovar Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 3
- 229910001950 potassium oxide Inorganic materials 0.000 description 3
- 229910001948 sodium oxide Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910001347 Stellite Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- WWTORYHTBNJMMT-UHFFFAOYSA-N potassium sodium oxygen(2-) Chemical compound [K+].[O-2].[Na+] WWTORYHTBNJMMT-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パッケージは、絶縁基体と蓋体とから成り、内部に
半導体素子を収容する空所を有する絶縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構成されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形成すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、絶縁基体及び蓋体のそれぞ
に被着させた封止用のガラス部材を溶融一体止させるこ
とによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a glass-sealed semiconductor element accommodating package sealed by glass welding, consists of an insulating base and a lid body, and the semiconductor element is housed inside. The device is composed of an insulating container having a cavity to open the container, and an external lead terminal for electrically connecting the semiconductor element housed in the container to an external electric circuit. After forming a glass member for sealing on the surface in advance, fixing external lead terminals to the main surface of the insulating substrate, and connecting each electrode of the semiconductor element and the external lead terminal by wire bonding, the insulating substrate and the lid are attached. The semiconductor element is hermetically sealed inside by melting and integrally sealing glass members attached to each of the parts.
（発明が解決しようとする課題）
しかし乍ら、この従来のガラス封止型半導体素子収納用
パンケージは通常、外部リード端子がコバール（２９Ｗ
ｔＸＮｉ−１６れχＣｏ−５５ＷｔχＦｅ合金）や４２
ＡＩｌｏｙ（４２ＷｔＸ Ｎｉ−５８ＷｔＸ Ｆｅ合金
）の導電性材料から成っており、該コバールや４２Ａ１
１ｏｙ等は導電率が低いことから以下に述べる欠点を有
する。(Problem to be Solved by the Invention) However, in this conventional glass-sealed semiconductor element storage pancase, the external lead terminals are usually Kovar (29W).
tXNi-16, χCo-55WtχFe alloy) and 42
It is made of conductive material of AIloy (42WtX Ni-58WtX Fe alloy), and is made of conductive material such as Kovar and 42A1.
1oy etc. have the following drawbacks because of their low conductivity.
即ち、
Ωコバールや４２Ａ１１ｏｙはその導電率が３．０〜３
．５χ（ＩＡＣＳ）と低い、そのためこのコバールや４
２ＡＩｌｏｙ等から成る外部リード端子に信号を伝搬さ
せた場合、信号の伝搬速度が極めて遅いものとなり、高
速駆動を行う半導体素子はその収容が不可となってしま
う、
■半導体素子収納用パッケージの内部に収容する半導体
素子の高密度化、高集積化の進展に伴い、半導体素子の
電極数が大幅に増大しており、半導体素子の各電極を外
部電気回路に接続する外部リード端子の線幅も極めて細
くなってきている。そのため外部リード端子は上記■に
記載のコバールや４２Ａ１１ｏｙの導電率が低いことと
相俊って電気抵抗が極めて大きなものになってきており
、外部リード端子に信号を伝搬させると、該外部リード
端子の電気抵抗に起因して信号が大きく減衰し、内部に
収容する半導体素子に信号を正確に入力することができ
ず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。That is, Ω Kovar and 42A11oy have an electrical conductivity of 3.0 to 3.
．． As low as 5χ (IACS), this Kovar and 4
When a signal is propagated to an external lead terminal made of 2AIloy or the like, the signal propagation speed becomes extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. With the progress of higher density and higher integration of semiconductor devices, the number of electrodes on semiconductor devices has increased significantly, and the line width of external lead terminals that connect each electrode of semiconductor devices to external electric circuits has also become extremely large. It's getting thinner. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42A11oy described in (2) above, and when a signal is propagated to the external lead terminal, the external lead terminal The signal is greatly attenuated due to the electrical resistance of the device, making it impossible to accurately input the signal to the semiconductor device housed inside the device, resulting in malfunction of the semiconductor device.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子における信号の減衰を極小となし、内部
に収容する半導体素子への信号の入出力を確実に行うこ
とを可能として半導体素子を長期間にわたり正常、且つ
安定に作動させることができる半導体素子収納用パッケ
ージを提供することにある。(Object of the Invention) The present invention was devised in view of the above drawbacks, and its purpose is to minimize the attenuation of signals at external lead terminals and ensure the input and output of signals to and from semiconductor elements housed inside. It is an object of the present invention to provide a package for storing a semiconductor element, which enables the semiconductor element to operate normally and stably for a long period of time.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用パッケージを提供
することにある。Another object of the present invention is to provide a semiconductor device storage package that can accommodate semiconductor devices that operate at high speed.
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
る絶縁容器に外部リード端子をガラス部材を介して取着
して成る半導体素子収納用パッケージにおいて、前記絶
縁容器をフォルステライト質焼結体もしくはジルコニア
質焼結体で、外部リード端子を熱膨張係数９５乃至１１
０ ×１０−’／ ”Ｃ１導電率１２χ（ＩＡＣＳ）以
上の金属で、ガラス部材をシリカ３０．０乃至６０．０
Ｗｔχ、酸化鉛２０．０乃至４０．Ｏ讐ｔ″ｔ１ナトリ
ウム、カリウムの酸化物の少なくとも１種１０．０乃至
２０．０Ｗｔχから成るガラスで形成したことを特徴と
するものである。(Means for Solving the Problems) The present invention provides a package for storing a semiconductor element, which is formed by attaching an external lead terminal to an insulating container having a cavity for accommodating a semiconductor element through a glass member. The insulating container is made of forsterite sintered body or zirconia sintered body, and the external lead terminal has a thermal expansion coefficient of 95 to 11.
0 x 10-'/''C1 metal with electrical conductivity of 12χ (IACS) or higher, glass member made of silica 30.0 to 60.0
Wtχ, lead oxide 20.0 to 40. It is characterized in that it is formed of a glass comprising at least one of sodium and potassium oxides of 10.0 to 20.0 Wtx.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パッケー
ジの一実施例を示し、■はｋ（ｕ ４３基体、２は蓋体
である。この絶縁基体１と蓋体２とにより絶縁容器３が
構成される。1 and 2 show an embodiment of the package for storing semiconductor elements of the present invention, where ■ is a k(u43 base) and 2 is a lid. 3 is composed.
前記絶縁基体ｌ及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形成するための凹部が設けてあり
、絶縁基体１の凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element, and the semiconductor element 4 is placed on the bottom of the recess of the insulating base 1 with resin, glass, or brazing agent. It is attached and fixed via adhesive such as.
前記絶縁基体ｌ及び蓋体２はフォルステライト質焼結体
もしくはジルコニア質焼結体から成り、第１図に示すよ
うな絶縁基体１及び蓋体２に対応した形状を有するプレ
ス型内に、フォルステライト質焼結体の場合はマグネシ
ア（ＭｇＯ） 、シリカ（ＳｉＯｚ）等の原料粉末を、
ジルコニア質焼結体の場合は酸化ジルコニウム（ＺｒＯ
ｚ）、イツトリア（Ｙ２Ｏ２）等の原料粉末を充填させ
るとともに一定圧力を印加して成形し、しかる後、成形
品を約１２００〜１５００°Ｃの温度で焼成することに
よって製作される。The insulating base 1 and the lid 2 are made of a forsterite sintered body or a zirconia sintered body, and are placed in a press mold having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. In the case of stellite sintered bodies, raw material powders such as magnesia (MgO) and silica (SiOz) are used.
In the case of zirconia sintered bodies, zirconium oxide (ZrO
z), is filled with raw material powder such as yttoria (Y2O2), molded by applying a constant pressure, and then fired at a temperature of about 1200 to 1500°C.
尚、前記絶縁基体１及び蓋体２を形成するフォルステラ
イト質焼結体もしくはジルコニア質焼結体はその熱膨張
係数がｌＯＯ乃至１１０ ｘｌＯ−’／ ”ｃであり、
後述する封止用ガラス部材の熱膨張係数との関係におい
て絶縁基体１及び蓋体２と封止用ガラス部材間に大きな
熱膨張の差が生じることはない。The forsterite sintered body or the zirconia sintered body forming the insulating base 1 and the lid 2 have a thermal expansion coefficient of lOO to 110 xlO-'/''c,
In relation to the coefficient of thermal expansion of the sealing glass member, which will be described later, there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member.
また前記絶縁基体１及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形成されており、該
（色縁基体１及び蓋体２の各々に被着されている封止用
ガラス部材６を加熱溶融させ一体化させることにより絶
縁容器３内の半導体素子４を気密に封止する。Further, a glass member 6 for sealing is formed in advance on the opposing main surfaces of the insulating base 1 and the lid 2, and a glass member 6 for sealing is deposited on each of the (color-rimmed base 1 and lid 2). The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 that is included in the insulating container 3 and integrating the sealing glass member 6 .
前記絶縁基体ｌ及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、シリカ３０．０乃至６０．０
Ｗｔ！ 、酸化鉛２０．０乃至４０．０Ｗｔχ、ナトリ
ウム、カリウムの酸化物の少なくとも１種１０．０乃至
２０．０Ｗｔχより形成されるガラスから成り、上記各
成分を所定の値となるように秤量混合すると共に、該混
合わ）末を１３００〜１４００℃の温度で加熱溶融させ
ることによって製作される。このガラス部材６の熱膨張
係数は１００乃至１１０ ×１０−’／ ”Ｃである。The sealing glass member 6 adhered to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica 30.0 to 60.0.
Wt! , lead oxide of 20.0 to 40.0 Wtχ, at least one of sodium and potassium oxides of 10.0 to 20.0 Wtχ, and the above components are weighed and mixed to a predetermined value. At the same time, it is manufactured by heating and melting the mixed powder at a temperature of 1300 to 1400°C. The coefficient of thermal expansion of this glass member 6 is 100 to 110×10-'/''C.
前記封止用ガラス部月６は、その熱膨張係数が１００乃
至１１０ ｘｌＯ−’／ ”ｃであり、絶縁基体ｌ及び
蓋体２の各々の熱膨張係数と近似することから絶縁基体
１及び蓋体２の各々に被着されている封止用ガラス部材
６を加熱溶融させ一体化させることにより絶縁容器３内
の半導体素子４を気密に封止する際、絶縁基体１及び蓋
体２と封止用ガラス部材６との間には両者の熱膨張係数
の相違に起因する熱応力が発生することは殆どなく、絶
縁基体１と蓋体２とを封止用ガラス部材６を介し強固に
接合することが可能となる。The sealing glass part 6 has a thermal expansion coefficient of 100 to 110 xlO-'/''c, which is similar to the thermal expansion coefficient of each of the insulating base 1 and the lid 2. When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the bodies 2, the insulating base 1 and the lid 2 are sealed. There is almost no thermal stress generated between the sealing glass member 6 due to the difference in coefficient of thermal expansion between the two, and the insulating base 1 and the lid body 2 are firmly joined via the sealing glass member 6. It becomes possible to do so.
尚、前記封止用ガラス部材６はシリカ（ＳｉＯｚ）が３
０、ＯＷｔ！未満であるとガラスの結晶化が進んで絶縁
容器３の気密封止が困難となり、また６０．０ＷｔＺを
越えるとガラスの熱膨張が小さくなって絶縁基体１と蓋
体２の熱膨張と合わなくなることからシリカ（Ｓｉｎｇ
）は３０．０乃至６０．０れχの範囲に限定される。Note that the sealing glass member 6 contains 3 silica (SiOz).
0,OWt! If it is less than 60.0 WtZ, the crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3, and if it exceeds 60.0 WtZ, the thermal expansion of the glass will become so small that it will not match the thermal expansion of the insulating base 1 and the lid 2. Therefore, silica (Sing
) is limited to the range of 30.0 to 60.0.
また酸化鉛（ＰｂＯ）が２０．０ＷｔＺ未満であるとガ
ラスの熱膨張が小さくなって絶縁基体１と蓋体２の熱膨
張と合わなくなり、また４０．０Ｗｔχを越えるとガラ
スの結晶化が進んで絶縁容器３の気密封止が困難となる
ことから酸化鉛（ＰｂＯ）は２０．０乃至４０．ＯＷＬ
χの範囲に限定される。Furthermore, if lead oxide (PbO) is less than 20.0 WtZ, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, and if it exceeds 40.0 Wtχ, the crystallization of the glass progresses. Since it is difficult to hermetically seal the insulating container 3, lead oxide (PbO) should be in the range of 20.0 to 40. OWL
limited to the range of χ.
またナトリウム、カリウムの酸化物が１０．０訂χ未満
であるとガラスを製作する際のガラスの溶融温度が大幅
に上がって作業性が著しく悪くなり、また２０．０Ｗｔ
％を越えるとガラスの耐薬品性が劣化して絶縁容器３の
気密封止の信鎖性が大きく低下するためナトリウム、カ
リウムの酸化物は１０．０乃至２０．０Ｗｔ％の範囲に
限定される。In addition, if the oxides of sodium and potassium are less than 10.0 Wt, the melting temperature of the glass will increase significantly and the workability will be extremely poor.
%, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced. Therefore, the content of sodium and potassium oxides is limited to a range of 10.0 to 20.0 wt%. .
前記封止用ガラス部材６は前述した成分から成るガラス
に適当な有機溶剤、溶媒を添加して得たガラスペースト
を従来周知の厚膜手法を採用することによって絶縁基体
１及び蓋体２の相対向する主面に被着形成される。The sealing glass member 6 is made by applying a well-known thick film method to a glass paste obtained by adding an appropriate organic solvent or solvent to the glass made of the above-mentioned components, and thereby attaching the insulating substrate 1 and the lid 2 to each other. It is deposited and formed on the main surface facing the opposite direction.
前記絶縁基体ｌと蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電イヘがワイヤ７を介し電気的に接
続され、外部リード端子５を外部電気回路に接続するこ
とによって半導体素子４が外部電気回路に接続されるこ
ととなる。An external lead terminal 5 made of a conductive material is disposed between the insulating base l and the lid 2.
Each terminal of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リート端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体止さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体１と
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrally bonding the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base 1 when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５は非磁性体金属である銅（Ｃｕ）
から成る芯体の外表面にニッケルー鉄合金（Ｎｉ−Ｆｅ
合金）を接合させたもの等から成り、その導電率は１２
χ（［ＡＣ３）以上、熱膨張係数は９５乃至１１０ ｘ
ｌＯ−’／ ℃のう５電性材料から成る。The external lead terminal 5 is made of copper (Cu), which is a non-magnetic metal.
Nickel-iron alloy (Ni-Fe
The electrical conductivity is 12
χ ([AC3) or more, thermal expansion coefficient is 95 to 110 x
It consists of a pentaelectric material with a temperature of lO-'/°C.
前記外部リード端子５はその導電率が１２χ（ＩＡＣ３
）以上であり、電気を流し易いことから外部リート端子
５の信号伝搬速度を極めて速いものとなすことができ、
絶縁容器３内に収容した半導体素子４を高速駆動させた
としても半導体素子４と外部電気回路との間における信
号の出し入れは常に安定、且つ確実となすことができる
。The external lead terminal 5 has a conductivity of 12χ (IAC3
), and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high,
Even when the semiconductor element 4 housed in the insulating container 3 is driven at high speed, signals can always be input and output stably and reliably between the semiconductor element 4 and the external electric circuit.
また外部リード端子５の導電率が高いことから外部リー
ド端子５の線幅が細くなったとしても外部リード端子５
の電気抵抗を低く抑えることができ、その結果、外部リ
ード端子５における信号の減衰を極小として内部に収容
する半導体素子４に外部電気回路から供給される電気信
号を正モ有に入力することができる。Furthermore, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the external lead terminal 5
As a result, the attenuation of the signal at the external lead terminal 5 is minimized, and the electrical signal supplied from the external electrical circuit can be properly input to the semiconductor element 4 housed inside. can.
更に前記外部リード端子５はその熱膨張係数が９５乃至
１１０ ×１０−’／ ”ｃであり、封止用ガラス部材
６の熱膨張係数と近似することから外部リード端子５を
絶縁基体１と蓋体２の間に封止用ガラス部材６を用いて
固定する際、外部リード端子５と１゛１止川ガ用ス部材
６との間には両者の熱膨張係数の相違に起因する熱応力
が発生することはなく・外部リード端子５を封止用ガラ
ス部材６で強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a coefficient of thermal expansion of 95 to 110 × 10-'/''c, which is similar to the coefficient of thermal expansion of the sealing glass member 6. When fixing between the body 2 using the sealing glass member 6, there is a thermal stress between the external lead terminal 5 and the sealing glass member 6 due to the difference in coefficient of thermal expansion between the two. The external lead terminal 5 can be firmly fixed with the sealing glass member 6.
かくして、この半導体素子収納用パッケージによれば絶
縁基体ｌの凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
１と蓋体２とを該絶縁基体ｌ及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体止させることによって接合させ、これによって最終製
品としての半導体装置が完成する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate l, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7, and then, The insulating base 1 and the lid 2 are joined together by melting the sealing glass member 6 that has been previously applied to the opposing main surfaces of the insulating base 1 and the lid 2. The semiconductor device as a product is completed.
（発明の効果）
本発明の半導体素子収納用パッケージによれば、半導体
素子を収容するための絶縁容器をフォルステライト質焼
結体もしくはジルコニア質焼結体で、外部リード端子を
導電率が１２χ（ＩＡＣＳ）以上、熱膨張係数９５乃至
１１０ ｘｌＬ’／ ’ｃの金属で、ガラス部材をシリ
カ３０．０乃至６０．０Ｗｔ％、酸化鉛２０．０乃至４
０、０Ｗｔ％、ナトリウムンカリウムの酸化物の少なく
とも１種１０．０乃至２０．０ＷｔＸから成るガラスで
形成したことから外部リート端子の信号伝搬速度を極め
て速いものとなすことができ、絶縁容器内に収容した半
導体素子を高速駆動させたとしても半導体素子と外部電
気回路との間における信号の出し入れを安定、且つ確実
となすことが可能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, the insulating container for accommodating the semiconductor device is made of a forsterite sintered body or a zirconia sintered body, and the external lead terminals have a conductivity of 12χ( IACS) or higher, a metal with a coefficient of thermal expansion of 95 to 110
0.0 Wt%, at least one kind of sodium potassium oxide 10.0 to 20.0 Wt Even if the semiconductor element housed in the semiconductor element is driven at high speed, it is possible to stably and reliably transmit signals between the semiconductor element and the external electric circuit.
また外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低（抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することができる。In addition, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low (suppressed), and as a result, the attenuation of the signal at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. It is possible to accurately input electrical signals supplied from
更に前記外部リード端子はその熱膨張係数が絶縁基体、
蓋体及び封止用ガラス部材の各々の熱膨張係数と近似し
、絶縁基体と蓋体との間に外部リード端子を挟み、各々
を封止用ガラス部材で取着接合したとしても絶縁基体及
び蓋体と封止用ガラス部材との間、外部リード端子と封
止用ガラス部材との間のいずれにも熱膨張係数の相違に
起因する熱応力は発生せず、すべてを強固に取着接合す
ることも可能となる。Furthermore, the external lead terminal has a coefficient of thermal expansion that is equal to that of the insulating base,
The coefficient of thermal expansion is similar to that of each of the lid body and the sealing glass member, and even if an external lead terminal is sandwiched between the insulating base body and the lid body and each is attached and bonded with the sealing glass member, the insulating base and No thermal stress is generated between the lid and the sealing glass member, nor between the external lead terminal and the sealing glass member due to differences in thermal expansion coefficients, and all are firmly attached and bonded. It is also possible to do so.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージの絶
縁基体上面より見た平面図である。
ｌ ・・絶縁基体 ２ ・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1, viewed from the top surface of the insulating base. l...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
器に外部リード端子をガラス部材を介して取着して成る
半導体素子収納用パッケージにおいて、前記絶縁容器を
フォルステライト質焼結体もしくはジルコニア質焼結体
で、外部リード端子を熱膨張係数９５乃至１１０×１０
＾−＾７／℃、導電率１２％（ＩＡＣＳ）以上の金属で
、ガラス部材をシリカ３０．０乃至６０．０Ｗｔ％、酸
化鉛２０．０乃至４０．０Ｗｔ％、ナトリウム、カリウ
ムの酸化物の少なくとも１種１０．０乃至２０．０Ｗｔ
％から成るガラスで形成したことを特徴とする半導体素
子収納用パッケージ。In a semiconductor device storage package in which external lead terminals are attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside, the insulating container is made of a forsterite sintered body or a zirconia sintered body. The external lead terminal is a sintered body with a thermal expansion coefficient of 95 to 110 x 10.
^-^7/℃, metal with electrical conductivity of 12% (IACS) or more, glass member with 30.0 to 60.0 Wt% of silica, 20.0 to 40.0 Wt% of lead oxide, and oxides of sodium and potassium. At least one type 10.0 to 20.0 Wt
A package for storing semiconductor elements, characterized in that it is formed of glass consisting of %.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312723A JP2742617B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
| US07/574,472 US5168126A (en) | 1989-08-25 | 1990-08-27 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312723A JP2742617B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03173157A true JPH03173157A (en) | 1991-07-26 |
| JP2742617B2 JP2742617B2 (en) | 1998-04-22 |
Family
ID=18032644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1312723A Expired - Lifetime JP2742617B2 (en) | 1989-08-25 | 1989-11-30 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742617B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06187823A (en) * | 1992-12-18 | 1994-07-08 | Taiyo Yuden Co Ltd | Ni content nonmagnetic conductive paste and electronic part mounted with conductor thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146899A (en) * | 1974-05-16 | 1975-11-25 | ||
| JPS53123080A (en) * | 1977-04-02 | 1978-10-27 | Ngk Insulators Ltd | Circuit substrate and ceramic package assembly and method of producing same |
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63185318U (en) * | 1987-05-22 | 1988-11-29 | ||
| JPS645041A (en) * | 1987-06-29 | 1989-01-10 | Shinko Electric Ind Co | Manufacture of ceramic body having superconducting circuit pattern |
-
1989
- 1989-11-30 JP JP1312723A patent/JP2742617B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146899A (en) * | 1974-05-16 | 1975-11-25 | ||
| JPS53123080A (en) * | 1977-04-02 | 1978-10-27 | Ngk Insulators Ltd | Circuit substrate and ceramic package assembly and method of producing same |
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63185318U (en) * | 1987-05-22 | 1988-11-29 | ||
| JPS645041A (en) * | 1987-06-29 | 1989-01-10 | Shinko Electric Ind Co | Manufacture of ceramic body having superconducting circuit pattern |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06187823A (en) * | 1992-12-18 | 1994-07-08 | Taiyo Yuden Co Ltd | Ni content nonmagnetic conductive paste and electronic part mounted with conductor thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2742617B2 (en) | 1998-04-22 |
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