JP2742612B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit,
A glass member for sealing is applied in advance on the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wired. After the bond connection, the semiconductor element is hermetically sealed inside by fusing and integrating a sealing glass member attached to each of the insulating base and the lid.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
% Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt%
Ni-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their high magnetic permeability and low electric conductivity.

That is, Kovar and 42Alloy are made of only ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (Co), and have high magnetic permeability of 250 to 700 (CGS). Therefore, when a current flows through the external lead terminal made of Kovar or 42Alloy, a large self-inductance is generated in the external lead terminal in proportion to the magnetic permeability, which induces a back electromotive force to become noise, and the noise becomes a semiconductor. The conductivity of Kovar or 42Alloy is 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to minimize the noise generated at the external lead terminals and the signal attenuation at the external lead terminals to minimize the semiconductor device housed therein. An object of the present invention is to provide a package for housing a semiconductor element capable of reliably inputting / outputting a signal and allowing a semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention comprises an insulating container having an insulating base and a lid and having a space for accommodating a semiconductor element therein, and an external electric device for accommodating the semiconductor element accommodated in the container. In a semiconductor device housing package comprising external lead terminals for connecting to a circuit, the insulating base and the lid are made of a forsterite sintered body or a zirconia sintered body, and the external lead terminals are made of a copper core. External surface nickel 24.5 to 25.5Wt
%, Iron is coated with a coating layer composed of an alloy of 74.5 to 75.5 Wt%, and is formed of a metal body in which the cross-sectional area of the coating layer is 1.5 to 12 times the cross-sectional area of the core body. is there.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating base 1 and the lid 2 are made of a forsterite-based sintered body or a zirconia-based sintered body, and are placed in a press die having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. Raw material powders such as magnesia (MgO) and silica (SiO ₂ ) for stellite sintered bodies, and raw material powders such as zirconium oxide (ZrO ₂ ) and yttria (Y ₂ O ₃ ) for zirconia sintered bodies And molding by applying a constant pressure.
It is manufactured by firing at a temperature of 00 ° C.

The forsterite-based sintered body or zirconia-based sintered body forming the insulating base 1 and the lid 2 has a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and a sealing glass member described later. There is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the thermal expansion coefficient of

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 adhered to the opposing main surfaces of the insulating base 1 and the lid 2 is made of, for example, lead borosilicate glass, and contains lead oxide (PbO) 70.0 to 90 as a raw material powder.
0 wt%, boron oxide _{(B 2 O 3) 12.0~13.0Wt%} , silica (S
iO ₂ ) 0.5 to 3.0 Wt% and alumina (Al ₂ O ₃ ) 0.5 to 3.0 Wt%
And mixing and heating and melting the mixed powder at a temperature of 950 to 1100 ° C. This lead borosilicate glass has a coefficient of thermal expansion of 100 to 120 × 10 ^-7 / ° C.
It is.

The sealing glass member 6 has a thermal expansion coefficient of 100 to 120.
Since the coefficient of thermal expansion is × 10 ⁻⁷ / ° C. and approximates the thermal expansion coefficients of the insulating base 1 and the lid 2, the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is heated. When the semiconductor element 4 in the insulating container 3 is air-tightly sealed by being melted and integrated, a difference in thermal expansion coefficient between the insulating base 1 and the lid 2 and the sealing glass member 6 may be caused. The resulting thermal stress hardly occurs, and the insulating base 1 and the lid 2 can be firmly joined via the sealing glass member 6.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to a powder of lead borosilicate glass by employing a conventionally well-known thick film method to form the insulating base 1 and the lid. The two main surfaces facing each other are adhered and formed.

Further, the sealing glass member 6 is not limited to lead borosilicate glass, and has a coefficient of thermal expansion of 100 to 120 ×.
Any glass in the range of 10 ^-7 / ° C can be used.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 through a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 covers the outer surface of a core made of copper with a coating layer made of an alloy of 24.5 to 25.5 Wt% of nickel and 74.5 to 75.5 Wt% of iron, and the cross-sectional area of the coating layer is changed to the cross-sectional area of the core. It has a magnetic permeability of about 1 (CGS) and a conductivity of 10.0 to 45.0% (IAC).
S), the coefficient of thermal expansion is about 100-110 × 10 ^-7 / ° C.

The external lead terminal 5 is formed by pressing a nickel-iron alloy (Ni-Fe alloy) against the outer surface of a copper (Cu) ingot and then rolling the nickel-iron alloy (Ni-Fe alloy).

The external lead terminals 5 are made of nickel (Ni), iron (F
If the amount of e) and the cross-sectional area of the core body and the coating layer are out of the above range, the magnetic permeability of the external lead terminal 5 becomes a desired small value,
The conductivity does not reach a large value, and the coefficient of thermal expansion does not match the coefficient of thermal expansion of the insulating base and the lid. Therefore, the external lead terminals 5 cover the outer surface of the core made of copper with a coating layer made of an alloy of 24.5 to 25.5 Wt% of nickel and 74.5 to 75.5 Wt% of iron, and change the cross-sectional area of the coating layer to the cross-sectional area of the core. It is limited to those formed of a metal body that is 1.5 to 12 times as large as the metal body.

The external lead terminal 5 has a magnetic permeability of about 1 (CGS), and since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is generated in the external lead terminal 5. As a result, the noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor element 4 housed therein can always operate normally.

The external lead terminal 5 has a conductivity of 10.0% (IA
CS) or more, and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high. Even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 Signals can be always sent and received between the power supply and the external electric circuit in a stable and reliable manner.

At the same time, since the electrical conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 is reduced, the electrical resistance of the external lead terminal 5 can be suppressed low. An electric signal supplied from an external electric circuit can be accurately input to the semiconductor element 4 housed therein with the attenuation being minimized.

Further, the external lead terminal 5 has a thermal expansion coefficient of about
Since the thermal expansion coefficient of the external lead terminal 5 is 100 to 110 × 10 ⁻⁷ / ° C. and is close to the thermal expansion coefficient of the sealing glass member 6, the sealing glass member 6 is used between the insulating base 1 and the lid 2. When fixing the external lead terminal 5 and the sealing glass member 6, no thermal stress is generated between the external lead terminal 5 and the sealing glass member 6 due to the difference in thermal expansion coefficient between the two. 6, it is also possible to fix firmly.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the package for housing a semiconductor element of the present invention, the insulating base and the lid constituting the insulating container for housing the semiconductor element are made of a forsterite-based sintered body or a zirconia-based sintered body, The lead terminals are coated on the outer surface of a core made of copper with a coating layer made of an alloy of 24.5 to 25.5 Wt% of nickel and 74.5 to 75.5 Wt% of iron, and the cross-sectional area of the coating layer is 1.5 times the cross-sectional area of the core. The permeability is about 1 (C
GS), conductivity is more than 10.0% (IACS), and thermal expansion coefficient is about 10
Since it is formed of a metal body of 0 to 110 × 10 ⁻⁷ / ° C., a large self-inductance does not occur in the external lead terminal even when a current is applied to the external lead terminal. The noise caused by the induced back electromotive force is minimized, and the semiconductor element housed therein can always be operated normally.

In addition, the signal propagation speed of the external lead terminal can be made extremely fast, so that even when the semiconductor element housed in the insulating container is driven at high speed, the transfer of signals between the semiconductor element and the external electric circuit is always stable, In addition, it is possible to make sure.

Furthermore, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The supplied electric signal can be input accurately.

Further, the thermal expansion coefficient of the external lead terminal is close to the thermal expansion coefficient of each of the insulating base, the lid and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid,
Even if each of them is attached and bonded with a sealing glass member, the thermal expansion coefficient is different between the insulating base and the lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is caused by this, and it is possible to firmly attach and join all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Insulating container 5 ... External lead terminal 6 ... Glass member for sealing

Claims (1)

(57) [Claims] An insulating container, comprising an insulating base and a lid, having a space for accommodating a semiconductor element therein, and an external container for connecting the semiconductor element contained in the container to an external electric circuit. In a semiconductor element housing package comprising lead terminals, the insulating base and the lid are made of a forsterite-based sintered body or a zirconia-based sintered body, and the outer lead terminals are made of a copper core having an outer surface of nickel 24.5 to 25.5.
Wt%, iron 74.5 to 75.5 Wt%, with a coating layer composed of an alloy, and the cross-sectional area of the coating layer is 1.5
A package for accommodating a semiconductor element, wherein the package is formed of a metal body having a size of up to 12 times.