JP2691309B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit,
A glass member for sealing is applied in advance on the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wired. After the bond connection, the semiconductor element is hermetically sealed inside by fusing and integrating a sealing glass member attached to each of the insulating base and the lid.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
% Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt%
Ni-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their high magnetic permeability and low electric conductivity.

That is, Kovar and 42Alloy are made of only ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (Co), and have high magnetic permeability of 250 to 700 (CGS). Therefore, when a current flows through the external lead terminal made of Kovar or 42Alloy, a large self-inductance is generated in the external lead terminal in proportion to the magnetic permeability, which induces a back electromotive force to become noise, and the noise becomes a semiconductor. The conductivity of Kovar or 42Alloy is 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to minimize the noise generated at the external lead terminals and the signal attenuation at the external lead terminals to minimize the semiconductor device housed therein. An object of the present invention is to provide a package for housing a semiconductor element capable of reliably inputting / outputting a signal and allowing a semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention relates to a package for housing semiconductor elements, wherein external lead terminals are attached via a glass member to an insulating container having a space for housing semiconductor elements therein. an insulating container with forsterite sintered body or zirconia sintered body, permeability 200 permeable to external lead terminals (CGS) below, 95 to the thermal expansion coefficient of 110 × 10 ^-7 / ℃, conductivity 10% (IAC
S) or higher metal, glass oxide lead oxide 70.0 to 90.0Wt
%, Boron oxide 10.0 to 15.0 Wt%, silica 0.5 to 3.0 Wt
%, Alumina 0.5 to 3.0 wt%, zinc oxide and bismuth oxide 3.0 wt% or less lead titanate, β-
Eucryptite, cordierite, zircon, tin oxide,
It is characterized in that it is formed of glass to which a filler containing at least one of willemite and tin titanate is added in an amount of 15 vol% or less.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating base 1 and the lid 2 are made of a forsterite-based sintered body or a zirconia-based sintered body, and are placed in a press die having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. Raw material powders such as magnesia (MgO) and silica (SiO ₂ ) for stellite sintered bodies, and raw material powders such as zirconium oxide (ZrO ₂ ) and yttria (Y ₂ O ₃ ) for zirconia sintered bodies And molding by applying a constant pressure.
It is manufactured by firing at a temperature of 00 ° C.

The forsterite-based sintered body or zirconia-based sintered body forming the insulating base 1 and the lid 2 has a thermal expansion coefficient of 100 to 110 × 10 ⁻⁷ / ° C., and a sealing glass member described later. There is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the thermal expansion coefficient of

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 adhered to the main surfaces of the insulating base 1 and the lid 2 facing each other is made of lead oxide 70.0 to 90.0 Wt%,
Boron oxide 10.0 to 15.0 Wt%, silica 0.5 to 3.0 Wt%,
Alumina 0.5 to 3.0 Wt%, zinc oxide and bismuth oxide 3.
A glass component containing 0 wt% or less of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite, and tin titanate as a filler, added at 15 vol% or less. It is manufactured by weighing and mixing the components so as to have predetermined values, and heating and melting the mixed powder at a temperature of 950 to 1100 ° C. The coefficient of thermal expansion of this glass member 6 is 90 to
It is 120 × 10 ^-7 / ° C.

The sealing glass member 6 has a thermal expansion coefficient of 90 to 90.
120 × 10 ⁻⁷ / ° C., which is close to the thermal expansion coefficient of each of the insulating base 1 and the lid 2, so that the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating, melting, and integrating, there is a difference in thermal expansion coefficient between the insulating base 1 and the lid 2 and the sealing glass member 6. Almost no thermal stress is generated due to the insulating base 1 and the lid 2.
Can be firmly joined via the sealing glass member 6.

The sealing glass member 6 contains 70.0 W of lead oxide (PbO).
If it is less than t%, the thermal expansion of the glass becomes small and it does not match the thermal expansion of the insulating base 1 and the lid 2. If it exceeds 90.0 Wt%, the chemical resistance of the glass deteriorates and the insulating container 3 is hermetically sealed. The reliability of lead oxide (PbO) is 70.
It is limited to the range of 0 to 90.0 Wt%.

Further, when the content of boron oxide (B ₂ O ₃ ) is less than 10.0 Wt%, the thermal expansion of the glass becomes large, and the thermal expansion of the insulating substrate 1 and the lid 2 does not match, and when it exceeds 15.0 Wt%, the chemical resistance of the glass is high. Boron oxide (B ₂ O ₃ ) is limited to the range of 10.0 to 15.0 Wt% because the reliability is deteriorated and the reliability of the airtight sealing of the insulating container 3 is significantly reduced.

Further, when the amount of alumina (Al ₂ O ₃ ) is less than 0.5 Wt%, the crystallization of the glass progresses and it becomes difficult to hermetically seal the insulating container 3,
On the other hand, if it exceeds 3.0 Wt%, the thermal expansion of the glass becomes so small that it does not match the thermal expansion of the insulating substrate 1 and the lid 2. Therefore, alumina (Al ₂ O ₃ ) is limited to the range of 0.5 to 3.0 Wt%.

If silica (SiO ₂ ) is less than 0.5 Wt%, the crystallization of the glass will proceed and it will be difficult to hermetically seal the insulating container 3. If it exceeds 3.0 Wt%, the external lead terminal 5 will be attached to the insulating container 3 as a glass member. Silica (SiO ₂ ) is 0.50 to 3.0 Wt because the melting temperature of the glass rises when attaching via 6 and causes thermal deterioration of the semiconductor element housed inside the insulating container 3.
Limited to the range of%.

If zinc oxide (ZnO) exceeds 3.0 wt%, crystallization of the glass proceeds and it becomes difficult to hermetically seal the insulating container 3. Therefore, zinc oxide (ZnO) is limited to 3.0 wt% or less.

The bismuth oxide (Bi ₂ O ₃₎ bismuth oxide because the reliability of the hermetic sealing of the chemical resistance of the glass is deteriorated insulating container 3 exceeds 3.0 wt% significantly decreases (Bi ₂ O ₃₎ is 3.0 Wt%
Limited to:

In addition, titanium lead (PbTi
O ₃ ), β-euctaptite (Li ₂ Al ₂ Si ₂ O ₈ ), cordierite (Mg ₂ Al ₄ Si ₅ O ₁₈ ), zircon (ZrSiO ₄ ), tin oxide (SnO ₂ ), willemite (Zn ₂ SiO _4). ) And tin titanate (S
If at least one of n ₄ SiO ₄ ) exceeds 15 vol%, the thermal expansion of the glass will not match the thermal expansion of the insulating substrate 1 and the lid 2. Therefore, its addition is limited to 15 vol% or less.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to the glass composed of the above-described components, by employing a conventionally known thick-film technique, by using a conventionally known thick-film technique. It is formed on the opposite main surface.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 via a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 is made of a non-magnetic metal such as copper (Cu).
Chromium-iron alloy (Cr-Fe alloy) on the outer surface of a core made of
Or plate-like Invar alloy (36.5Wt
% Ni-63.5Wt% Fe alloy) and non-magnetic metal copper (Cu) bonded to the top and bottom surfaces, and its magnetic permeability is
It is made of a conductive material with a conductivity of 200 (CGS) or less, a conductivity of 10% (IACS) or more, and a coefficient of thermal expansion of 95 to 110 × 10 ^-7 / ℃.

The external lead terminal 5 has a magnetic permeability of 200 (CGS) or less, and since the magnetic permeability is low, a large self-inductance is generated in the external lead terminal 5 even when a current flows through the external lead terminal 5. As a result, the noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor element 4 housed therein can always operate normally.

The external lead terminal 5 has a conductivity of 10% (IAC
S) This is the above, and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high. Even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 Signals can be always transmitted and received between the device and the external electric circuit normally and reliably.

At the same time, since the electrical conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 is reduced, the electrical resistance of the external lead terminal 5 can be suppressed low. An electric signal supplied from an external electric circuit can be accurately input to the semiconductor element 4 housed therein with the attenuation being minimized.

Further, the external lead terminal 5 has a thermal expansion coefficient of 95 to
110 × 10 ⁻⁷ / ° C., which is close to the thermal expansion coefficient of the sealing glass member 6, so that the external lead terminal 5 is fixed between the insulating substrate 1 and the lid body 2 by using the sealing glass member 6. In doing so, the external lead terminals 5 and the sealing glass member 6 are firmly fixed to each other by the sealing glass member 6 without causing thermal stress due to the difference in thermal expansion coefficient between the external lead terminals 5 and the sealing glass member 6. It is also possible to fix it to.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the package for housing a semiconductor element of the present invention, the insulating container for housing the semiconductor element is a forsterite sintered body or a zirconia sintered body, and the external lead terminal has a magnetic permeability of 200 (CGS). ) Below, the coefficient of thermal expansion is 95 to 110 × 10
^-7 / ℃, metal with a conductivity of 10% (IACS) or more, glass member made of lead oxide 70.0 to 90.0 Wt%, boron oxide 10.0 to 15.0 Wt
%, Silica 0.5 to 3.0 Wt%, alumina 0.5 to 3.0 Wt%,
At least one of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite and tin titanate as a filler was added to a glass component consisting of zinc oxide and bismuth oxide of 3.0 Wt% or less in an amount of 15 Vol% or less. Since it is made of glass, a large self-inductance does not occur in the external lead terminal even when a current is applied to the external lead terminal, and as a result, the noise caused by the counter electromotive force induced by the self-inductance is reduced. Since it is extremely small, it is possible to always operate the semiconductor element housed inside normally.

Also, the signal propagation speed of the external lead terminal can be made extremely high, and even if the semiconductor element housed in the insulating container is driven at a high speed, the transfer of signals between the semiconductor element and the external electric circuit is stable, and It is possible to make sure.

Furthermore, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The supplied electric signal can be input accurately.

Furthermore, the coefficient of thermal expansion of the external lead terminal approximates to the coefficient of thermal expansion of each of the insulating substrate, the lid and the sealing glass member, and the external lead terminal is sandwiched between the insulating substrate and the lid.
Even if each of them is attached and bonded with a sealing glass member, the thermal expansion coefficient is different between the insulating base and the lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is caused by this, and it is possible to firmly attach and join all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Insulating container 5 ... External lead terminal 6 ... Glass member for sealing

Continuation of the front page (56) References JP-A-50-146899 (JP, A) JP-A-53-123080 (JP, A) JP-A 64-5041 (JP, A) JP-A-62-256741 (JP , A) Actually opened 63-185318 (JP, U) Actually opened 55-100239 (JP, U)

Claims (1)

(57) [Claims] 1. A package for storing a semiconductor device, comprising an external lead terminal attached via a glass member to an insulating container having a space for housing a semiconductor device therein, wherein the insulating container is made of forsterite. A sintered body or a zirconia sintered body, the external lead terminal has a magnetic permeability of 200 (CGS) or less, a coefficient of thermal expansion of 95 to 110 × 10 ^-7 / ° C, an electrical conductivity of 10% (IAC
S) or higher metal, glass oxide lead oxide 70.0 to 90.0Wt
%, Boron oxide 10.0 to 15.0 Wt%, silica 0.5 to 3.0 Wt
%, Alumina 0.5 to 3.0 wt%, zinc oxide and bismuth oxide 3.0 wt% or less lead titanate, β-
Eucryptite, cordierite, zircon, tin oxide,
A package for accommodating a semiconductor element, which is formed of glass containing 15 vol% or less of a filler containing at least one of willemite and tin titanate.