JPH03173161A - Package for housing semiconductor element - Google Patents
Package for housing semiconductor elementInfo
- Publication number
- JPH03173161A JPH03173161A JP1312729A JP31272989A JPH03173161A JP H03173161 A JPH03173161 A JP H03173161A JP 1312729 A JP1312729 A JP 1312729A JP 31272989 A JP31272989 A JP 31272989A JP H03173161 A JPH03173161 A JP H03173161A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- glass
- external lead
- lead terminal
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000011521 glass Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000035699 permeability Effects 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 8
- 239000011029 spinel Substances 0.000 claims abstract description 8
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 7
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 7
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000292 calcium oxide Substances 0.000 claims abstract description 5
- 235000012255 calcium oxide Nutrition 0.000 claims abstract description 5
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 5
- 230000005291 magnetic effect Effects 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000005219 brazing Methods 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 21
- 229910000833 kovar Inorganic materials 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- -1 Ni) and cobalt (Co) Chemical class 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パフケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a puff cage for accommodating semiconductor elements.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パッケージは、絶縁基体と蓋体とから成り、内部に
半導体素子を収容する空所を有する絶縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構成されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形成すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、絶縁基体及び蓋体のそれぞ
に被着させた封止用のガラス部材を溶融一体止させるこ
とによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a glass-sealed semiconductor element accommodating package sealed by glass welding, consists of an insulating base and a lid body, and the semiconductor element is housed inside. The device is composed of an insulating container having a cavity to open the container, and an external lead terminal for electrically connecting the semiconductor element housed in the container to an external electric circuit. After forming a glass member for sealing on the surface in advance, fixing external lead terminals to the main surface of the insulating substrate, and connecting each electrode of the semiconductor element and the external lead terminal by wire bonding, the insulating substrate and the lid are attached. The semiconductor element is hermetically sealed inside by melting and integrally sealing glass members attached to each of the parts.
（発明が解決しようとする課題）
しかし乍ら、この従来のガラス封止型半導体素子収納用
パッケージは通常、外部リード端子がコバール（２９Ｗ
ｔＸ Ｎｉ−１６ＷｔＸＣｏ−５５ｗｔχＦｅ合金）や
４２ＡＩＩｏｙ（４２ＷｔＸＮｉ−５８ＷｔＸ Ｆｅ合
金）の導電性材料から成っており、該コバールや４２八
目Ｏｙ等は透磁率が高く、且つ導電率が低いことから以
下に述べる欠点を有する。(Problem to be Solved by the Invention) However, in this conventional glass-sealed package for storing semiconductor elements, the external lead terminals are usually Kovar (29W).
It is made of conductive materials such as tXNi-16WtXCo-55wtχFe alloy) and 42AIIoy (42WtXNi-58WtX Fe alloy), and Kovar and 42Hachime Oy have high magnetic permeability and low conductivity, so they are described below. It has its drawbacks.
即ち、
■コバールや４２ＡＩＩｏｙは鉄（Ｆｅ）、ニアケル（
Ｎｉ）、コバルト（Ｃｏ）といった強磁性体金属のみか
ら成っており、その透磁率は２５０〜７００ （ＣＧＳ
）と高い。そのためこのコバールや４２ＡＩＩｏｙ等か
ら成る外部リード端子に電流が流れると外部リード端子
中に透磁率に比例した大きな自己インダクタンスが発生
し、これが逆起電力を誘発してノイズとなると共に、該
ノイズが半導体素子に入力されて半導体素子に誤動作を
生じさせる、
■コバールや４２Ａｌｌｏｙはその導電率が３．０〜３
．５２（ＩＡＣ５）と低い。そのためこのコバールや４
２Ａｌｌｏｙ等から成る外部リード端子に信号を伝搬さ
せた場合、信号の伝搬速度が極めて遅いものとなり、高
速駆動を行う半導体素子はその収容が不可となってしま
う、
■半導体素子収納用パッケージの内部に収容する半導体
素子の高密度化、高集積化の進展に伴い、半導体素子の
電極数が大幅に増大しており、半導体素子の各電極を外
部電気回路に接続する外部リード端子の線幅も極めて細
くなってきている。そのため外部リード端子は上記■に
記載のコバールや４２Ａｌｌｏｙの導電率が低いことと
相俊って電気抵抗が掻めて大きなものになってきており
、外部リード端子に信号を伝搬させると、該外部リード
端子の電気抵抗に起因して信号が大きく減衰し、内部に
収容する半導体素子に信号を正確に入力することができ
ず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。In other words, ■ Kovar and 42AIIoy are iron (Fe) and Niackel (
It is made only of ferromagnetic metals such as Ni) and cobalt (Co), and its magnetic permeability is 250 to 700 (CGS
) and high. Therefore, when a current flows through the external lead terminal made of Kovar, 42AIIoy, etc., a large self-inductance proportional to the magnetic permeability is generated in the external lead terminal, which induces back electromotive force and becomes noise. Kovar and 42Alloy have a conductivity of 3.0 to 3.
．． 52 (IAC5), which is low. Therefore, this Kobar and 4
When a signal is propagated to an external lead terminal made of 2Alloy, etc., the signal propagation speed becomes extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. With the progress of higher density and higher integration of semiconductor devices, the number of electrodes on semiconductor devices has increased significantly, and the line width of external lead terminals that connect each electrode of semiconductor devices to external electric circuits has also become extremely large. It's getting thinner. Therefore, the electrical resistance of external lead terminals has increased due to the low conductivity of Kovar and 42Alloy described in item (2) above, and the electrical resistance has increased, and when a signal is propagated to the external lead terminal, It has the disadvantage that the signal is greatly attenuated due to the electrical resistance of the lead terminal, making it impossible to accurately input the signal to the semiconductor element housed inside, causing the semiconductor element to malfunction. Ta.
（発明の目的）
本発明は上記欠点に鑑み富山されたもので、その目的は
外部リード端子で発生するノイズ及び外部リード端子に
おける信号の減衰を掻小となし、内部に収容する半導体
素子への信号の入出力を確実に行うことを可能として半
導体素子を長期間にわたり正常、且つ安定に作動させる
ことができる半導体素子収納用パンケージを提供するこ
とにある。(Object of the Invention) The present invention was developed in view of the above drawbacks, and its purpose is to minimize the noise generated at the external lead terminal and the attenuation of the signal at the external lead terminal, and to reduce the noise generated at the external lead terminal and the attenuation of the signal at the external lead terminal. It is an object of the present invention to provide a pancase for storing a semiconductor element, which enables reliable input/output of signals and allows the semiconductor element to operate normally and stably for a long period of time.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用パッケージを提供
することにある。Another object of the present invention is to provide a semiconductor device storage package that can accommodate semiconductor devices that operate at high speed.
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
る絶縁容器に外部リード端子をガラス部材を介して取着
して成る半導体素子収納用パッケージにおいて、前記絶
縁容器をスピネルもしくはステアタイト質焼結体で、外
部リード端子を透磁率２００（ＣＧＳ ）以下、熱膨張
係数７０乃至８５Ｘ１０−’７℃、導電率５０χ（ｌＡ
ｃ５ ）以上の金属で、ガラス部材をシリカ３０．０乃
至５０．０Ｗｔ％、酸化鉛１０．０乃至３０．０讐ｔ％
、酸化ホウ素５．０乃至１５．０れ％、酸化バリウム５
．０乃至１５．ｏ１４ｔ％、酸化ビスマス５．０乃至１
０．０れ％、アルミナ１．０乃至１０．０Ｗｔ％、カル
シアｔｏ、ｏｗｔ％以下から成るガラスで形成したこと
を特徴とするものである。(Means for Solving the Problems) The present invention provides a package for storing a semiconductor element, which is formed by attaching an external lead terminal to an insulating container having a cavity for accommodating a semiconductor element through a glass member. The insulating container is made of spinel or steatite sintered body, and the external lead terminal is made of a material with a magnetic permeability of 200 (CGS) or less, a thermal expansion coefficient of 70 to 85 x 10-'7°C, and an electrical conductivity of 50χ (1A).
c5) or above, the glass member contains 30.0 to 50.0 wt% of silica and 10.0 to 30.0 wt% of lead oxide.
, boron oxide 5.0 to 15.0%, barium oxide 5
．． 0 to 15. o14t%, bismuth oxide 5.0 to 1
It is characterized in that it is formed of a glass consisting of 0.0% by weight, 1.0 to 10.0% by weight of alumina, and 0.0% by weight of calcia.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パッケー
ジの一実施例を示し、■は絶縁基体、２は蓋体である。FIGS. 1 and 2 show an embodiment of a package for storing semiconductor elements according to the present invention, in which .largecircle. is an insulating base and 2 is a lid.
この絶８！基体ｌと蓋体２とにより絶縁容器３が構成さ
れる。This absolute 8! The base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体ｌ及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形成するための凹部が設けてあり
、絶縁基体ｌの凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element, and the semiconductor element 4 is placed on the bottom of the recess of the insulating base 1 with resin, glass, or brazing agent. It is attached and fixed via adhesive such as.
前記絶縁基体１及び蓋体２はスピネルもしくはステアタ
イト質焼結体から成り、第１図に示すような絶縁基体ｌ
及び蓋体２に対応した形状を有するプレス型内に、スピ
ネルの場合はマグネシア（ＭｇＯ）、アルミナ（＾ｈ０
３ ）の原料ワ）末を、ステアタイト質焼結体の場合は
マグネシア（Ｍｇ（＋） 、シリカ（ＳｉＯ□）等の原
料粉末を充填させるとともに一定圧力を印加して成形し
、しかる後、成形品を約１２００〜１７００℃の温度で
焼成することによって製作される。The insulating base 1 and the lid 2 are made of spinel or steatite sintered body, and the insulating base 1 as shown in FIG.
In the case of spinel, magnesia (MgO) and alumina (^h0
3) In the case of steatite sintered material, the powder of the raw material W) is filled with raw material powder such as magnesia (Mg(+), silica (SiO□), etc.), and a constant pressure is applied to form the powder, and then, It is manufactured by firing a molded article at a temperature of approximately 1200 to 1700°C.
尚、前記絶縁基体１及び蓋体２を形成するスピネル、ス
テアタイト質焼結体はその熱膨張係数が７０乃至８５×
１０−’／ ’ｃであり、後述する封止用ガラス部材の
熱膨張係数との関係において絶縁基体ｌ及び蓋体２と封
止用ガラス部材間に大きな熱膨張の差が生じることはな
い。The spinel and steatite sintered bodies forming the insulating base 1 and the lid 2 have a thermal expansion coefficient of 70 to 85×.
10-'/'c, and there is no large difference in thermal expansion between the insulating base l and the lid 2 and the sealing glass member in relation to the coefficient of thermal expansion of the sealing glass member, which will be described later.
また前記絶縁基体ｌ及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形成されており、該
絶縁基体１及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。Further, a sealing glass member 6 is formed in advance on the opposing main surfaces of the insulating base 1 and the lid 2, and is adhered to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to integrate it.
前記絶！！基体１及び蓋体２の相対向する主面に被着さ
れる封止用ガラス部材６は、シリカ３０．０乃至５０．
０讐ｔ％、酸化鉛ｌ０００乃至３０．０Ｗｔ％、酸化ホ
ウ素５．０乃至ｉｓ、ｏｗｔ％、酸化バリウム５．０乃
至１５．０れ％、酸化ビスマス５．０乃至ｉｏ、ｏｗｔ
％、アルミナ１．０乃至１０．０ＷｔＸ 、 力／Ｌ’
ｚ？１０．ＯＷｔ＄以下、ｌ形成されるガラスから成り
、上記各成分を所定の値となるように秤量混合すると共
に、該混合粉末を１３００〜１４００℃の温度で加熱溶
融させることによって製作される。このガラス部材６の
熱膨張係数は５５乃至７５Ｘ１０−’／ ’Ｃである。Unprecedented! ! The sealing glass member 6 attached to the opposing main surfaces of the base body 1 and the lid body 2 is made of silica of 30.0 to 50.
0 weight%, lead oxide 1000 to 30.0wt%, boron oxide 5.0 to 15.0%, barium oxide 5.0 to 15.0%, bismuth oxide 5.0 to io, owt.
%, alumina 1.0 to 10.0WtX, force/L'
Z? 10. It is made of glass that is formed by weighing and mixing the above components to a predetermined value, and is manufactured by heating and melting the mixed powder at a temperature of 1,300 to 1,400°C. The coefficient of thermal expansion of this glass member 6 is 55 to 75X10-'/'C.
前記封止用ガラス部材６は、その熱膨張係数が５５乃至
７５Ｘ１０−’／ ℃であり、絶縁基体１及び蓋体２の
各々の熱膨張係数と近似することから絶縁基体１及び蓋
体２の各々に被着されている封止用ガラス部材６を加熱
溶融させ一体化させることにより絶縁容器３内の半導体
素子４を気密に封止する際、絶縁基体ｌ及び蓋体２と封
止用ガラス部材６との間には両者の熱膨張係数の相違に
起因する熱応力が発生することは殆どなく、絶縁基体１
と蓋体２とを封止用ガラス部材６を介し強固に接合する
ことが可能となる。The sealing glass member 6 has a thermal expansion coefficient of 55 to 75×10-'/°C, which is similar to the thermal expansion coefficients of the insulating base 1 and the lid 2. When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass members 6 attached to each, the insulating base l and the lid 2 are combined with the sealing glass. There is almost no thermal stress generated between the insulating base 1 and the member 6 due to the difference in coefficient of thermal expansion between the two.
It becomes possible to firmly join the lid body 2 to the lid body 2 through the sealing glass member 6.
尚、前記封止用ガラス部材６はシリカ（ＳｉＯｚ）が３
０、ＯＷｔχ未満であるとガラスの結晶化が進んで絶縁
容器３の気密封止が困難となり、また５０．ＯＷｔχを
越えるとガラスの熱膨張が小さくなって絶縁基体ｌと蓋
体２の熱膨張と合わなくなることからシリカ（ＳｉＯ□
）は３０．０乃至５０．ＯＷｔχの範囲に限定される。Note that the sealing glass member 6 contains 3 silica (SiOz).
If it is less than 0.0, OWtχ, crystallization of the glass will progress, making it difficult to hermetically seal the insulating container 3; If OWtχ is exceeded, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, so silica (SiO□
) is 30.0 to 50. limited to the range of OWtχ.
また酸化鉛（ＰｂＯ）が１０．０ＷｔＸ未満であるとガ
ラスの熱膨張が小さくなって絶縁基体１と蓋体２の熱膨
張と合わなくなり、また３０．ＯＷｔχを越えるとガラ
スの耐薬品性が劣化して絶縁容器３の気密封止の信頼性
が大きく低下するため酸化鉛（ＰｂＯ）は１０．０乃至
３０．０ＷｔＸの範囲に限定される。If the lead oxide (PbO) content is less than 10.0 WtX, the thermal expansion of the glass will be too small to match the thermal expansion of the insulating base 1 and the lid 2, and 30. If OWtχ is exceeded, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so lead oxide (PbO) is limited to a range of 10.0 to 30.0 WtX.
また酸化ホウ素（ａｘｏ３）が５．Ｏｗｔｘ未満である
とガラスの結晶化が進んで絶縁容器３の気密封止が困難
となり、また１５．ＯＷｔχを越えるとガラスの耐薬品
性が劣化して絶縁容器３の気密封止の信頼性が大きく低
下するため酸化ホウ素（ｓｚｏｉ）は５．０乃至１５．
Ｈｔχの範囲に限定される。Also, boron oxide (axo3) is 5. If it is less than Owtx, crystallization of the glass will progress, making it difficult to hermetically seal the insulating container 3, and 15. If the value of boron oxide (szoi) exceeds OWtχ, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced.
limited to the range of Htχ.
また酸化バリウム（ｆｌａｇ）が５．０しχ未満である
とガラスの耐薬品性が劣化して絶縁容器３の気密封止の
信頼性が大きく低下し、また１５．０Ｗｔχを越えると
ガラスの結晶化が進んで絶縁容器３の気密封止が困難と
なるため酸化バリウム（Ｂａｄ）は５．０乃至１５．Ｏ
Ｗｔχの範囲に限定される。Furthermore, if the barium oxide (flag) is less than 5.0Wtχ, the chemical resistance of the glass will deteriorate and the reliability of the hermetic seal of the insulating container 3 will be greatly reduced, and if it exceeds 15.0Wtχ, the glass crystals will deteriorate. barium oxide (Bad) is 5.0 to 15. O
limited to the range of Wtχ.
また酸化ビスマス（ＢｌｘＯｚ）が５．ＯＷｔχ未満で
あるとガラスの結晶化が進んで絶縁容器３の気密封止が
困難となり、また１０．０Ｗｔχを越えるとガラスの耐
薬品性が劣化して絶縁容器３の気密封止の信頼性が大き
く低下するため酸化ビスマス（Ｂｉｚ０３）は５．０乃
至１０．０Ｗｔχの範囲に限定される。Also, bismuth oxide (BlxOz) is 5. If it is less than OWtχ, crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3, and if it exceeds 10.0Wtχ, the chemical resistance of the glass will deteriorate and the reliability of hermetically sealing the insulating container 3 will deteriorate. Bismuth oxide (Biz03) is limited to a range of 5.0 to 10.0 Wtχ because of the large decrease.
またアルミナ（Ａｌ□０．）が１．０しχ未満であると
ガラスの耐薬品性が劣化して絶縁容器３の気密封止の信
頼性が大きく低下し、またｉｏ、ｏｗｔχを越えるとガ
ラスの熱膨張が小さくなり、絶縁基体１と蓋体２の熱膨
張と合わなくなることからアルミナ（Ａｈａ））は１．
０乃至１０．０Ｗｔχの範囲に限定される。Furthermore, if alumina (Al□0.) is less than 1.0 and χ, the chemical resistance of the glass will deteriorate and the reliability of hermetic sealing of the insulating container 3 will be greatly reduced; Since the thermal expansion of the insulating base 1 and the lid body 2 becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, alumina (Aha)) is 1.
It is limited to a range of 0 to 10.0 Wtχ.
またカルシア（Ｃａｂ）が１０．ＯＷｔχを越えるとガ
ラスの耐薬品性が劣化して絶縁容器３の気密封止の信頼
性が大きく低下するためその量は１０．０ＷｔＸ以下に
限定される。Also, Calcia (Cab) is 10. If OWtχ is exceeded, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so the amount is limited to 10.0WtX or less.
前記封止用ガラス部材６は前述した成分から成るガラス
に適当な有機溶剤、溶媒を添加して得たガラスペースト
を従来周知の厚膜手法を採用することによって絶縁基体
ｌ及び蓋体２の相対向する主面に被着形成される。The sealing glass member 6 is made by applying a conventionally well-known thick film method to a glass paste obtained by adding a suitable organic solvent or solvent to the glass made of the above-mentioned components. It is deposited and formed on the main surface facing the opposite direction.
前記絶縁基体１と蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リード端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体止さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体１と
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrally bonding the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base 1 when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５は非磁性体金属である銅（Ｃｕ）
から成る芯体の外表面に銅（Ｃｕ）／コバール（Ｆｅ−
Ｎｉ−Ｃｏ合金）／銅（Ｃｕ）の接合金属を被着させた
もの、或いは板状のコバール（Ｆｅ−Ｎｉ−Ｃｏ合金）
もしくはインバー合金（３６，５ＷｔχＮｉ−６３，５
ＷｔχＦｅ合金）の上下面に非磁性体金属である銅（Ｃ
ｕ）を接合させたもの等から成り、その透磁率は２００
（ＣＧＳ）以下、導電率は５０χ（ＩＡＣＳ）以上、
熱膨張係数は７０乃至８５×１０−７７℃の導電性材料
から成る。The external lead terminal 5 is made of copper (Cu), which is a non-magnetic metal.
Copper (Cu)/Kovar (Fe-
Ni-Co alloy)/copper (Cu) bonding metal coated, or plate-shaped Kovar (Fe-Ni-Co alloy)
Or invar alloy (36,5WtχNi-63,5
Copper (C
The magnetic permeability is 200.
(CGS) or less, conductivity is 50χ or more (IACS),
It is made of a conductive material with a coefficient of thermal expansion of 70 to 85.times.10@-77.degree.
前記外部リード端子５はその透磁率が２００（ＣＧＳ）
以下であり、透磁率が低いことから外部リード端子５に
電流が流れたとしても外部リード端子５中には大きな自
己インダクタンスが発生することはなく、その結果、前
記自己インダクタンスにより誘発される逆起電力に起因
したノイズを極小となし、内部に収容する半導体素子４
を常に正常に作動させることができる。The external lead terminal 5 has a magnetic permeability of 200 (CGS).
Since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is not generated in the external lead terminal 5, and as a result, the back electromotive force induced by the self-inductance is Semiconductor element 4 that minimizes noise caused by electric power and houses it inside.
can always operate normally.
また前記外部リード端子５はその導電率が５０χ（ＩＡ
ＣＳ）以上であり、電気を流し易いことから外部リード
端子５の信号伝搬速度を掻めて速いものとなすことがで
き、絶縁容器３内に収容した半導体素子４を高速駆動さ
せたとしても半導体素子４と外部電気回路との間におけ
る信号の出し入れは常に安定、且つ確実となすことがで
きる。Further, the external lead terminal 5 has a conductivity of 50χ (IA
CS), and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be increased, and even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor Signal input and output between the element 4 and the external electric circuit can always be carried out stably and reliably.
また同時に外部リード端子５の導電率が高いことから外
部リード端子５の線幅が細くなったとしても外部リード
端子５の電気抵抗を低く抑えることができ、その結果、
外部リード端子５における信号の減衰を極小として内部
に収容する半導体素子４に外部電気回路から供給される
電気信号を正確に入力することができる。At the same time, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the electrical resistance of the external lead terminal 5 can be kept low, and as a result,
By minimizing the attenuation of the signal at the external lead terminal 5, it is possible to accurately input the electrical signal supplied from the external electrical circuit to the semiconductor element 4 housed inside.
また更に前記外部リード端子５はその熱膨張係数が７０
〜８５Ｘ１０−’／ ”Ｃであり、封止用ガラス部材６
の熱膨張係数と近似することから外部リード端子５を絶
縁基体１と蓋体２の間に封止用ガラス部材６を用いて固
定する際、外部リード端子５と封止用ガラス部材６との
間には両者の熱膨張係数の相違に起因する熱応力が発生
することはなく、外部リード端子５を封止用ガラス部材
６で強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a coefficient of thermal expansion of 70.
~85X10-'/''C, and the sealing glass member 6
When the external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6, the thermal expansion coefficient of the external lead terminal 5 and the sealing glass member 6 is approximated by Thermal stress due to the difference in coefficient of thermal expansion between the two does not occur, and the external lead terminal 5 can be firmly fixed with the sealing glass member 6.
かくして、この半導体素子収納用パッケージによれば絶
縁基体１の凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
ｌと蓋体２とを該絶縁基体１及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体止させることによって接合させ、これによって最終製
品としての半導体装置が完成する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7, and then, The insulating base 1 and the lid 2 are joined together by melting the sealing glass member 6 that has been previously applied to the opposing main surfaces of the insulating base 1 and the lid 2, and thereby the final The semiconductor device as a product is completed.
（発明の効果）
本発明の半導体素子収納用パンケージによれば、半導体
素子を収容するための絶縁容器をスピネルもしくはステ
アタイト質焼結体で、外部リード端子を透磁率が２００
（ＣＧＳ）以下、導電率が５０χ（■へＣＳ）以上、
熱膨張係数が７０乃至８５Ｘ１０−’／ ’Ｃの金属で
、ガラス部材をシリカ３０．０乃至５０．０ＷｔＸ 、
酸化鉛１０．０乃至３０．０Ｗｔ％、酸化ホウ素５．０
乃至１５．０れ％、酸化バリウム５．０乃至１５．０Ｗ
ｔｚ、酸化ビスマス５．０乃至１０．０Ｗｔ％、アルミ
ナ１．０乃至１０．０れ％、カルシア１０．ＯＷｔ％以
下から成るガラスで形成したことから外部リード端子に
電流を流したとしても該外部リード端子中に大きな自己
インダクタンスが発生することはなく、その結果ミ前記
自己インダクタンスにより誘発される逆起電力に起因し
たノイズを極小となし、内部に収容する半導体素子を常
に正常に作動させることが可能となる。(Effects of the Invention) According to the semiconductor device storage pancase of the present invention, the insulating container for accommodating the semiconductor device is made of spinel or steatite sintered body, and the external lead terminal has a magnetic permeability of 200.
(CGS) or less, conductivity is 50χ (CS to ■) or more,
The glass member is made of metal with a thermal expansion coefficient of 70 to 85X10-'/'C, and the glass member is made of silica of 30.0 to 50.0WtX.
Lead oxide 10.0 to 30.0 Wt%, boron oxide 5.0
15.0% to 15.0%, barium oxide 5.0 to 15.0W
tz, bismuth oxide 5.0 to 10.0 wt%, alumina 1.0 to 10.0 wt%, calcia 10. Since it is made of glass consisting of OWt% or less, even if a current is passed through the external lead terminal, a large self-inductance will not be generated in the external lead terminal, and as a result, the back electromotive force induced by the self-inductance will be reduced. It is possible to minimize the noise caused by this, and to always operate the semiconductor element housed inside normally.
また外部リード端子の信号伝搬速度を掻めて速いものと
なすことができ、絶縁容器内に収容した半導体素子を高
速駆動させたとしても半導体素子と外部電気回路との間
における信号の出し入れを安定、且つ確実となすことが
可能となる。In addition, the signal propagation speed of the external lead terminal can be increased and the signal transmission speed between the semiconductor element and the external electric circuit can be stabilized even when the semiconductor element housed in the insulating container is driven at high speed. , and can be done reliably.
更に外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低く抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することができる。Furthermore, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the attenuation of the signal at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. The supplied electrical signal can be input accurately.
また更に前記外部リード端子はその熱膨張係数が絶縁基
体、蓋体及び封止用ガラス部材の各々の熱膨張係数と近
似し、！！！縁基体と蓋体との間に外部リード端子を挟
み、各々を封止用ガラス部材で取着接合したとしても絶
縁基体及び蓋体と封止用ガラス部材との間、外部リード
端子と封止用ガラス部材との間のいずれにも熱膨張係数
の相違に起因する熱応力は発生せず、すべてを強固に取
着接合することも可能となる。Furthermore, the coefficient of thermal expansion of the external lead terminal is close to that of each of the insulating base, the lid, and the sealing glass member, and! ! ! Even if the external lead terminal is sandwiched between the edge base and the lid and each is attached and bonded with a sealing glass member, there will be no contact between the insulating base, the lid, and the sealing glass member, and between the external lead terminal and the seal. No thermal stress due to the difference in coefficient of thermal expansion occurs between the glass member and the glass member, and it is possible to firmly attach and bond all the members.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージの絶
縁基体上面より見た平面図である。
１ ・・絶縁基体 ２ ・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1, viewed from the top surface of the insulating base. 1...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
器に外部リード端子をガラス部材を介して取着して成る
半導体素子収納用パッケージにおいて、前記絶縁容器を
スピネルもしくはステアタイト質焼結体で、外部リード
端子を透磁率２００（ＣＧＳ）以下、熱膨張係数７０乃
至８５×１０＾−＾７／℃、導電率５０％（ＩＡＣＳ）
以上の金属で、ガラス部材をシリカ３０．０乃至５０．
０Ｗｔ％、酸化鉛１０．０乃至３０．０Ｗｔ％、酸化ホ
ウ素５．０乃至１５．０Ｗｔ％、酸化バリウム５．０乃
至１５．０Ｗｔ％、酸化ビスマス５．０乃至１０．０Ｗ
ｔ％、アルミナ１．０乃至１０．０Ｗｔ％、カルシア１
０．０Ｗｔ％以下から成るガラスで形成したことを特徴
とする半導体素子収納用パッケージ。In a semiconductor device storage package in which an external lead terminal is attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside, the insulating container is made of spinel or steatite sintered body. , the external lead terminal has a magnetic permeability of 200 (CGS) or less, a thermal expansion coefficient of 70 to 85 x 10^-^7/℃, and an electrical conductivity of 50% (IACS).
The glass member is made of silica of 30.0 to 50.
0Wt%, lead oxide 10.0 to 30.0Wt%, boron oxide 5.0 to 15.0Wt%, barium oxide 5.0 to 15.0Wt%, bismuth oxide 5.0 to 10.0W
t%, alumina 1.0 to 10.0wt%, calcia 1
A package for housing a semiconductor element, characterized in that it is formed of glass comprising 0.0 Wt% or less.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312729A JP2736462B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
| US07/573,406 US5057905A (en) | 1989-08-25 | 1990-08-24 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1312729A JP2736462B2 (en) | 1989-11-30 | 1989-11-30 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03173161A true JPH03173161A (en) | 1991-07-26 |
| JP2736462B2 JP2736462B2 (en) | 1998-04-02 |
Family
ID=18032722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1312729A Expired - Lifetime JP2736462B2 (en) | 1989-08-25 | 1989-11-30 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2736462B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63291834A (en) * | 1987-04-27 | 1988-11-29 | コーニング グラス ワークス | Glass ceramics for electronic packing, thermally crystalline glass and substrate therefrom |
-
1989
- 1989-11-30 JP JP1312729A patent/JP2736462B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
| JPS55100239A (en) * | 1979-01-23 | 1980-07-31 | Asahi Glass Co Ltd | Seal bonding glass composition |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63291834A (en) * | 1987-04-27 | 1988-11-29 | コーニング グラス ワークス | Glass ceramics for electronic packing, thermally crystalline glass and substrate therefrom |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2736462B2 (en) | 1998-04-02 |
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