JP2736457B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit. A glass member for sealing is previously formed on the surface, an external lead terminal is fixed to the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wire-bonded to each other. The semiconductor element is hermetically sealed inside by fusing and integrating the sealing glass members adhered to the respective elements.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
%, Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt% N
i-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their low electrical conductivity.

4 That is, Kovar and 42Alloy have a conductivity of 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to minimize signal attenuation at an external lead terminal and to reliably input and output a signal to a semiconductor element housed therein. It is therefore an object of the present invention to provide a semiconductor element storage package that enables the semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention relates to a package for housing semiconductor elements, wherein external lead terminals are attached via a glass member to an insulating container having a space for housing a semiconductor element therein. The insulating container is made of aluminum oxide sintered body, and the external lead terminals are made of a thermal expansion coefficient of 65 to 75 × 10 ^-7 / ° C and a conductivity of 25% (IAC
S) With the above metals, glass material is silica 30.0 to 50.0Wt
%, Lead oxide 10.0 ~ 30.0Wt%, boron oxide 5.0 ~ 15.0W
It is characterized by being formed of a glass comprising t%, barium oxide 5.0 to 15.0 Wt%, bismuth oxide 5.0 to 10.0 Wt%, alumina 1.0 Wt%, and calcia 10.0 Wt% or less.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating substrate 1 and the lid 2 are made of an aluminum oxide sintered body, and aluminum oxide (Al ₂ O ₃ ) is placed in a press mold having a shape corresponding to the insulating substrate 1 and the lid 2 as shown in FIG. It is manufactured by filling a raw material powder such as silica (SiO ₂ ), magnesia (MgO) and the like, applying a constant pressure and molding, and then firing the molded article at a temperature of about 1500 ° C.

The aluminum oxide sintered body forming the insulating base 1 and the lid 2 has a thermal expansion coefficient of 65 to 75 × 10 ⁻⁷ / ° C., which is lower than the thermal expansion coefficient of a sealing glass member described later. In this connection, there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member.

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is composed of silica 30.0 to 50 wt%, lead oxide 10.0 to 30.0 wt%, boron oxide 5.0 to 15.0 wt%,
Barium oxide 5.0 to 15.0 Wt% bismuth oxide 5.0 to 10.0
It consists of glass formed from Wt%, alumina 1.0 to 10.0 Wt%, calcia 10 Wt% or less, weighs and mixes each of the above components to a predetermined value, and heat-melts the mixed powder at a temperature of 1300 to 1400 ° C. Produced by The glass member 6 has a coefficient of thermal expansion of 55 to 70 × 10 ⁻⁷ / ° C.

The glass member for sealing 6 has a coefficient of thermal expansion of 55 to 70.
Since the coefficient of thermal expansion is × 10 ⁻⁷ / ° C. and approximates the thermal expansion coefficients of the insulating base 1 and the lid 2, the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is heated. When the semiconductor element 4 in the insulating container 3 is air-tightly sealed by being melted and integrated, a difference in thermal expansion coefficient between the insulating base 1 and the lid 2 and the sealing glass member 6 may be caused. The resulting thermal stress hardly occurs, and the insulating base 1 and the lid 2 can be firmly joined via the sealing glass member 6.

The sealing glass member 6 is made of silica (SiO ₂ ) of 30.0%.
If it is less than Wt%, the crystallization of the glass proceeds and it is difficult to hermetically seal the insulating container 3. 30.0-50.0Wt for silica (SiO ₂ )
%.

If the lead oxide (PbO) content is less than 10.0 Wt%, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating substrate 1 and the lid 2. If it exceeds 30.0 Wt%, the chemical resistance of the glass deteriorates. As a result, the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so that lead oxide (PbO) is limited to the range of 10.0 to 30.0 Wt%.

If the content of boron oxide (B ₂ O ₃ ) is less than 5.0 Wt%, crystallization of the glass proceeds and it becomes difficult to hermetically seal the insulating container 3. If the content exceeds 15.0 Wt%, the chemical resistance of the glass deteriorates. Therefore, the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so that the amount of boron oxide (B ₂ O ₃ ) is limited to the range of 5.0 to 15.0 Wt%.

When barium oxide (BaO) is less than 5.0 Wt%, the chemical resistance of the glass is deteriorated, and the reliability of hermetic sealing of the insulating container 3 is greatly reduced. Barium oxide (BaO) is limited to the range of 5.0 to 15.0 Wt% because it becomes difficult to hermetically seal the insulating container 3.

If bismuth oxide (Bi ₂ O ₃ ) is less than 5.0 Wt%, crystallization of the glass proceeds and it becomes difficult to hermetically seal the insulating container 3. If it exceeds 10.0 Wt%, the chemical resistance of the glass deteriorates. Therefore, the reliability of hermetic sealing of the insulating container 3 is greatly reduced, so that bismuth oxide (Bi ₂ O ₃ ) is limited to the range of 5.0 to 10.0 Wt%.

If the alumina (Al ₂ O ₃ ) content is less than 1.0 Wt%, the chemical resistance of the glass is deteriorated, and the reliability of hermetic sealing of the insulating container 3 is greatly reduced. Alumina (Al ₂ O ₃ ) is limited to the range of 1.0 to 10.0 Wt% because the expansion becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2. Further, when the calcia (CaO) exceeds 10.0 Wt%, Since the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced, calcia (CaO) is limited to 10.0 Wt% or less.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to a glass powder composed of the above-described components by employing a conventionally well-known thick film method to form the insulating base 1 and the lid 2. Are formed on opposite main surfaces.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 via a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 is made of a non-magnetic metal such as copper (Cu).
A nickel-cobalt-iron alloy (Ni-Co-Fe alloy) adhered to the outer surface of a core made of, or a plate-like nickel-cobalt-iron alloy (Ni-Co-Fe alloy) or an invar alloy (36.5Wt% Ni-63.5Wt% Fe alloy) consisting of copper (Cu), which is a non-magnetic metal, bonded to the upper and lower surfaces, has a conductivity of 25% (IACS) or more, and a thermal expansion coefficient of 65
To 75 × 10 ⁻⁷ / ° C.

The external lead terminal 5 has a conductivity of 25.0% (IACS)
As described above, it is easy to conduct electricity.
Can be made extremely fast, and even if the semiconductor element 4 housed in the insulating container 3 is driven at a high speed, the signal transfer between the semiconductor element 4 and the external electric circuit is always stable, and You can be sure.

Further, since the electrical conductivity of the external lead terminal 5 is high, the electrical resistance of the external lead terminal 5 can be kept low even if the line width of the external lead terminal 5 is reduced, and as a result, signal attenuation at the external lead terminal 5 is achieved. The electric signal supplied from the external electric circuit can be accurately input to the semiconductor element 4 housed therein with the minimum value.

Further, the external lead terminal 5 has a coefficient of thermal expansion of 65 to
The external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6 because it is 75 × 10 ⁻⁷ / ° C. and is close to the thermal expansion coefficient of the sealing glass member 6. In this case, no thermal stress is generated between the external lead terminal 5 and the sealing glass member 6 due to the difference in the coefficient of thermal expansion between the external lead terminal 5 and the sealing glass member 6. It becomes possible to fix firmly.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the package for housing a semiconductor element of the present invention, the insulating base and the lid are made of an aluminum oxide sintered body, the external lead terminals are made of a coefficient of thermal expansion of 65 to 75 × 10 ⁻⁷ / ° C., and the conductivity is 25% (I
ACS) More than metal, glass material is silica 30.0-50.0W
t%, lead oxide 10.0 to 30.0 Wt%, boron oxide 5.0 to 15.0
Wt%, barium oxide 5.0-15.0Wt% bismuth oxide 5.0-10.0Wt%, alumina 1.0-10.0Wt%, calcia 10.0W
The signal propagation speed of the external lead terminal can be made extremely high because it is made of glass of less than t%, and even if the semiconductor element housed in the insulating container is driven at high speed, the semiconductor element and the external electric circuit can be connected. It is possible to always stably and surely put a signal in and out during the period.

Also, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The supplied electric signal can be input accurately.

Further, the thermal expansion coefficient of the external lead terminal is close to the thermal expansion coefficient of each of the insulating base, the lid and the sealing glass member,
Even when the external lead terminals are sandwiched between the insulating base and the lid, and each of them is attached and bonded by the sealing glass member, the external lead terminals and the sealing are provided between the insulating base and the lid and the sealing glass member. No thermal stress due to the difference in the coefficient of thermal expansion is generated between the glass member and the glass member, and it is possible to firmly attach and bond all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Insulating container 5 ... External lead terminal 6 ... Glass member for sealing

Claims (1)

(57) [Claims] 1. A semiconductor element storage package comprising an external lead terminal attached via a glass member to an insulating container having a space for accommodating a semiconductor element therein. By bonding, the external lead terminals have a coefficient of thermal expansion of 65 to 75 × 10 ^-7 / ° C and a conductivity of 25%
S) With the above metals, glass material is silica 30.0 to 50.0Wt
%, Lead oxide 10.0 to 30.0 Wt%, boron oxide 5.0 to 15.0
Wt%, barium oxide 5.0-15.0Wt% bismuth oxide 5.0-10.0Wt%, alumina 1.0-10.0Wt%, calcia 10.0W
A package for housing a semiconductor element, wherein the package is made of glass of t% or less.